Wang D, Liu H, Zhang H, Cai M, Lin J. Modeling and Simulation Investigation of Ferroelectric-Based Electrostatic Doping for Tunnelling Field-Effect Transistor.
Micromachines (Basel) 2023;
14:672. [PMID:
36985079 PMCID:
PMC10051887 DOI:
10.3390/mi14030672]
[Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/03/2023] [Revised: 03/14/2023] [Accepted: 03/15/2023] [Indexed: 06/18/2023]
Abstract
In this paper, a novel ferroelectric-based electrostatic doping (Fe-ED) nanosheet tunneling field-effect transistor (TFET) is proposed and analyzed using technology computer-aided design (TCAD) Sentaurus simulation software. By inserting a ferroelectric film into the polarity gate, the electrons and holes are induced in an intrinsic silicon film to create the p-source and the n-drain regions, respectively. Device performance is largely independent of the chemical doping profile, potentially freeing it from issues related to abrupt junctions, dopant variability, and solid solubility. An improved ON-state current and ION/IOFF ratio have been demonstrated in a 3D-calibrated simulation, and the Fe-ED NSTFET's on-state current has increased significantly. According to our study, Fe-ED can be used in versatile reconfigurable nanoscale transistors as well as highly integrated circuits as an effective doping strategy.
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