Moiré Enhanced Two-Band Superconductivity in a MnTe/NbSe2 Heterojunction

Recent advances in creating moiré periods of two-dimensional heterostructures enable diverse and compatible tunability to modulate the conventional proximity effect involving superconductivity, magnetism, and topology. Here, by constructing a MnTe/NbSe2 heterojunction via molecular beam epitaxy growth, we report on a moiré-enhanced multiband superconductivity by low-temperature scanning tunneling microscopy/spectroscopy measurements. We observe a distinct double-gap superconducting spectrum on monolayer MnTe that is absent on the NbSe2 substrate. The subgap character exhibits a moiré-related oscillation in real space, which can be well described by an effective two-band model. The restored two-gap feature and its rapid suppression under a small magnetic field are speculated to be mediated by the moiré superlattice, which is closely related to the enhanced interband coupling strength of quasiparticle scattering. Our work paves the way for engineering proximitized properties of heterostructures by a moiré landscape with spatial modulations.

Magneto-optical Kerr Effect in Ferroelectric Antiferromagnetic Two-Dimensional Heterostructures

We studied the magneto-optical Kerr effect (MOKE) of two-dimensional (2D) heterostructure CrI₃/In₂Se₃/CrI₃ using density functional theory calculations and symmetry analysis. The spontaneous polarization in the In₂Se₃ ferroelectric layer and the antiferromagnetic ordering in CrI₃ layers break the mirror and the time-reversal symmetry, thus activating MOKE. We show that the Kerr angle can be reversed by either the polarization or the antiferromagnetic order parameter. Our results suggest that ferroelectric and antiferromagnetic 2D heterostructures could be exploited for ultracompact information storage devices, where the information is encoded by the two ferroelectric or the two time-reversed antiferromagnetic states and the read-out is performed optically by MOKE.

Interfacial Assembly of Ti3 C2 Tx /ZnIn2 S4 Heterojunction for High-Performance Photodetectors

Two-dimensional (2D) materials have emerged as prospective candidates for electronics and optoelectronics applications as they can be easily fabricated through liquid exfoliation and used to fabricate various structures by further subsequent processing methods in addition to their extraordinary and unique optoelectronic properties. Herein, the Ti₃ C₂ T_x /ZIS heterostructure with nanometer-thick Ti₃ C₂ T_x -MXene and ZnIn₂ S₄ (ZIS) films is fabricated by successive interfacial assembly of liquid exfoliated 2D MXene and ZnIn₂ S₄ nanoflakes. Benefiting from the superior light-harvesting capability and low dark current of ZnIn₂ S₄ , the limited absorbance, large scattering coefficient, and high dark current disadvantages of MXene are ameliorated. Meanwhile, the separation and transport of photogenerated carriers in ZnIn₂ S₄ are improved due to the excellent electrical conductivity of Ti₃ C₂ T_x nanoflakes. As a result, the as-prepared Ti₃ C₂ T_x /ZIS heterostructure photodetector has excellent optoelectronic characteristics in terms of a high responsivity of 1.04 mA W^-1 , a large specific detectivity up to 1 × 10¹¹  Jones, a huge on/off ratio at around 10⁵ , and an ultralow dark current at ≈10^-12  A. This work demonstrates a convenient method to construct heterostructured photodetectors by liquid exfoliated 2D nanoflakes, the as-fabricated Ti₃ C₂ T_x /ZIS heterostructured photodetectors show promising application potential for low-cost, reliable, and high-performance photodetectors.

Deterministic Light-to-Voltage Conversion with a Tunable Two-Dimensional Diode

Heterojunctions accompanied by energy barriers are of significant importance in two-dimensional materials-based electronics and optoelectronics. They provide more functional device performance, compared with their counterparts with uniform channels. Multimodal optoelectronic devices could be accomplished by elaborately designing band diagrams and architectures of the two-dimensional junctions. Here, we demonstrate deterministic light-to-voltage conversion based on strong dielectric screening effect in a tunable two-dimensional Schottky diode based on semiconductor/metal heterostructure, where the resultant photovoltage is dependent on the intensity of light input but independent of gate voltage. The converted photovoltage across the diode is independent of gate voltage under both monochromatic laser and white light illumination. In addition, the Fermi level of two-dimensional semiconductor area on dielectric SiO₂ is highly gate-dependent, leading to the tunable rectifying effect of this heterostructure, which corporates a vertical Schottky junction and a lateral homojunction. As a result, a constant open-circuit voltage of ∼0.44 V and a hybrid "photovoltaic + photoconduction" photoresponse behavior are observed under 1 μW illumination of 403 nm laser, in addition to an electrical rectification ratio up to nearly 10⁴. The scanning photocurrent mappings under different bias voltages indicate that the switchable operation mode (photovoltaic, photoconduction, or hybrid) depends on the bias-dependent effective energy barrier at the two-dimensional semiconductor-metal interface. This approach provides a facile and reliable solution for deterministic on-chip light-to-voltage conversion and optical-to-electrical interconnects.

Two-dimensional graphyne-graphene heterostructure for all-carbon transistors

Semiconducting graphyne is a two-dimensional (2D) carbon allotrope with high mobility, which is promising for next generation all-carbon field effect transistors (FETs). In this work, the electronic properties of van der Waals heterostructure consists of 2D graphyne and graphene (GY/G) were studied from first-principles calculations. It is found that the band dispersion of isolated graphene and graphyne remain intact after they were stacked together. Due to the charge transfer from graphene to graphyne, the Fermi level of the GY/G heterostructure crosses the VB of graphene and the CB of graphyne. As a result, n-type Ohmic contact with zero Schottky barrier height (SBH) is obtained in GY/G based FETs. Moreover, the electron tunneling from graphene to graphyne is found to be efficient. Therefore, excellent electron transport properties can be expected in GY/G based FETs. Lastly, it is demonstrated that the SBH in the GY/G heterostructure can be tune by applying a vertical external electric field or doping, and the transition from n-type to p-type contact can be realized. These results show that GY/G is potentially suitable for 2D FETs, and provide insights into the development of all-carbon electronic devices.

Insight into the stacking and the species-ordering dependences of interlayer bonding in SiC/GeC polar heterostructures

Two-dimensional (2D) polar materials experience an in-plane charge transfer between different elements due to their electron negativities. When they form vertical heterostructures, the electrostatic force triggered by such charge transfer plays an important role in the interlayer bonding beyond van der Waals (vdW) interaction. Our comprehensive first principle study on the structural stability of the 2D SiC/GeC hybrid bilayer heterostructure has found that the electrostatic interlayer interaction can induce theπ-πorbital hybridization between adjacent layers under different stacking and out-of-plane species ordering, with strong hybridization in the cases of Si-C and C-Ge species orderings but weak hybridization in the case of the C-C ordering. In particular, the attractive electrostatic interlayer interaction in the cases of Si-C and C-Ge species orderings mainly controls the equilibrium interlayer distance and the vdW interaction makes the system attain a lower binding energy. On the contrary, the vdW interaction mostly controls the equilibrium interlayer distance in the case of the C-C species ordering and the repulsive electrostatic interlayer force has less effect. Interesting finding is that the band structure of the SiC/GeC hybrid bilayer is sensitive to the layer-layer stacking and the out-of-plane species ordering. An indirect band gap of 2.76 eV (or 2.48 eV) was found under the AA stacking with Si-C ordering (or under the AB stacking with C-C ordering). While a direct band gap of 2.00-2.88 eV was found under other stacking and species orderings, demonstrating its band gap tunable feature. Furthermore, there is a charge redistribution in the interfacial region leading to a built-in electric field. Such field will separate the photo-generated charge carriers in different layers and is expected to reduce the probability of carrier recombination, and eventually give rise to the electron tunneling between layers.

Two-Dimensional CVD-Graphene/Polyaniline Supercapacitors: Synthesis Strategy and Electrochemical Operation

Nanocomposites of graphene materials and conducting polymers have been extensively studied as promising materials for electrodes of supercapacitors. Here, we present a graphene/polyaniline heterostructure consisting of a CVD-graphene and polyaniline monolayer and its electrochemical operation in a supercapacitor. The synthesis employs functionalization of graphene by p-phenylene sulfonic groups and oxidative polymerization of anilinium by ammonium persulfate under reaction conditions, providing no bulk polyaniline. Scanning electron microscopy, atomic force microscopy, and Raman spectroscopy showed the selective formation of polyaniline on the graphene. In situ Raman spectroelectrochemistry and cyclic voltammetry (both in a microdroplet setup) confirm the reversibility of polyaniline redox transitions and graphene electrochemical doping. After an increase within the initial 200 cycles due to the formation of benzoquinone-hydroquinone defects in polyaniline, the specific areal capacitance remained for 2400 cycles with ±1% retention at 21.2 μF cm^-2, one order of magnitude higher than the capacitance of pristine graphene.

Lattice-Matched Metal-Semiconductor Heterointerface in Monolayer Cu2Te

The interface between metals and semiconductors plays an essential role in two-dimensional electronic heterostructures, which has provided an alternative opportunity to realize next-generation electronic devices. Lattice-matched two-dimensional heterointerfaces have been achieved in polymorphic 2D transition-metal dichalcogenides MX₂ with M = (W, Mo) and X = (Te, Se, S) through phase engineering; yet other transition-metal chalcogenides have been rarely reported. Here we show that a single layer of hexagonal Cu₂Te crystal could be synthesized by one-step liquid-solid interface growth and exfoliation. Characterizations of atomically resolved scanning tunneling microscope reveal that the Cu₂Te monolayer consists of two lattice-matched distinct phases, similar to the 1T and 1T' phases of MX₂. The scanning tunneling spectra identify the coexistence of the metallic 1T and semiconducting 1T' phases within the chemically homogeneous Cu₂Te crystals, as confirmed by density functional theory calculations. Moreover, the two phases could form nanoscale lattice-matched metal-semiconductor junctions with atomically sharp interfaces. These results suggest a promising potential for exploiting atomic-scale electronic devices in 2D materials.

Solution-Processable 2D Polymer/Graphene Oxide Heterostructure for Intrinsic Low-Current Memory Device

Suppressing the operating current in resistive memory devices is an effective strategy to minimize their power consumption. Herein, we present an intrinsic low-current memory based on two-dimensional (2D) hybrid heterostructures consisting of partly reduced graphene oxide (p-rGO) and conjugated microporous polymer (CMP) with the merits of being solution-processed, large-scale, and well patterned. The device with the heterostructure of p-rGO/CMP sandwiched between highly reduced graphene oxide (h-rGO) and aluminum electrodes exhibited rewritable and nonvolatile memory behavior with an ultralow operating current (∼1 μA) and efficient power consumption (∼2.9 μW). Moreover, the on/off current ratio is over 10³, and the retention time is up to 8 × 10³ s, indicating the low misreading rate and high stability of data storage. So far, the value of power is about 10 times lower than those of the previous GO-based memories. The bilayer architecture provides a promising approach to construct intrinsic low-power resistive memory devices.

Manganese Doping of Monolayer MoS2: The Substrate Is Critical

Substitutional doping of transition metal dichalcogenides (TMDs) may provide routes to achieving tunable p-n junctions, bandgaps, chemical sensitivity, and magnetism in these materials. In this study, we demonstrate in situ doping of monolayer molybdenum disulfide (MoS2) with manganese (Mn) via vapor phase deposition techniques. Successful incorporation of Mn in MoS2 leads to modifications of the band structure as evidenced by photoluminescence and X-ray photoelectron spectroscopy, but this is heavily dependent on the choice of substrate. We show that inert substrates (i.e., graphene) permit the incorporation of several percent Mn in MoS2, while substrates with reactive surface terminations (i.e., SiO2 and sapphire) preclude Mn incorporation and merely lead to defective MoS2. The results presented here demonstrate that tailoring the substrate surface could be the most significant factor in substitutional doping of TMDs with non-TMD elements.