1
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Liu L, Zhang X, Fedeli S, Cicek YA, Ndugire W, Rotello VM. Controlled Bio-Orthogonal Catalysis Using Nanozyme-Protein Complexes via Modulation of Electrostatic Interactions. Materials (Basel) 2024; 17:1507. [PMID: 38612022 PMCID: PMC11012815 DOI: 10.3390/ma17071507] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2024] [Revised: 03/15/2024] [Accepted: 03/19/2024] [Indexed: 04/14/2024]
Abstract
Bio-orthogonal chemistry provides a powerful tool for drug delivery systems due to its ability to generate therapeutic agents in situ, minimizing off-target effects. Bio-orthogonal transition metal catalysts (TMCs) with stimuli-responsive properties offer possibilities for controllable catalysis due to their spatial-, temporal-, and dosage-controllable properties. In this paper, we fabricated a stimuli-responsive bio-orthogonal catalysis system based on an enhanced green fluorescent protein (EGFP)-nanozyme (NZ) complex (EGFP-NZ). Regulation of the catalytic properties of the EGFP-NZ complex was directly achieved by modulating the ionic strength of the solution. The dielectric screening introduced by salt ions allows the dissociation of the EGFP-NZ complex, increasing the access of substrate to the active site of the NZs and concomitantly increasing nanozyme activity. The change in catalytic rate of the NZ/EGFP = 1:1 complex was positively correlated with salt concentration from 0 mM to 150 mM.
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Affiliation(s)
| | | | | | | | | | - Vincent M. Rotello
- Department of Chemistry, University of Massachusetts Amherst, 710 N. Pleasant St., Amherst, MA 01003, USA; (L.L.); (X.Z.); (S.F.); (Y.A.C.)
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2
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Vrinda Narayanan P, Majumder S, Gokul MA, Taneja C, Kumar GVP, Rahman A. Improving the optoelectronic properties of monolayer MoS 2field effect transistor through dielectric engineering. Nanotechnology 2023; 34:505713. [PMID: 37708882 DOI: 10.1088/1361-6528/acf9aa] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2022] [Accepted: 09/14/2023] [Indexed: 09/16/2023]
Abstract
The reduced dielectric screening in atomically thin two-dimensional materials makes them very sensitive to the surrounding environment, which can be modulated to tune their optoelectronic properties. In this study, we significantly improved the optoelectronic properties of monolayer MoS2by varying the surrounding environment using different liquid dielectrics, each with a specific dielectric constant ranging from 1.89 to 18. Liquid mediums offer the possibility of environment tunability on the same device. For a back-gated field effect transistor, the field effect mobility exhibited more than two-order enhancement when exposed to a high dielectric constant medium. Further investigation into the effect of the dielectric environment on the optoelectronic properties demonstrated a variation in photoresponse relaxation time with the dielectric medium. The rise and decay times were observed to increase and decrease, respectively, with an increase in the dielectric constant of the medium. These results can be attributed to the dielectric screening provided by the surrounding medium, which strongly modifies the charged impurity scattering, the band gap, and defect levels of monolayer MoS2. These findings have important implications for the design of biological and chemical sensors, particularly those operating in a liquid environment. By leveraging the tunability of the dielectric medium, we can optimize the performance of such sensors and enhance their detection capabilities.
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Affiliation(s)
- P Vrinda Narayanan
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - Sudipta Majumder
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - M A Gokul
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - Chetna Taneja
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - G V Pavan Kumar
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
| | - Atikur Rahman
- Department of Physics, Indian Institute of Science Education and Research (IISER), Pune, Maharashtra, 411008, India
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3
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Biega RI, Chen Y, Filip MR, Leppert L. Chemical Mapping of Excitons in Halide Double Perovskites. Nano Lett 2023; 23:8155-8161. [PMID: 37656044 PMCID: PMC10510582 DOI: 10.1021/acs.nanolett.3c02285] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2023] [Revised: 08/25/2023] [Indexed: 09/02/2023]
Abstract
Halide double perovskites comprise an emerging class of semiconductors with tremendous chemical and electronic diversity. While their band structure features can be understood from frontier-orbital models, chemical intuition for optical excitations remains incomplete. Here, we use ab initio many-body perturbation theory within the GW and the Bethe-Salpeter equation approach to calculate excited-state properties of a representative range of Cs2BB'Cl6 double perovskites. Our calculations reveal that double perovskites with different combinations of B and B' cations display a broad variety of electronic band structures and dielectric properties and form excitons with binding energies ranging over several orders of magnitude. We correlate these properties with the orbital-induced anisotropy of charge-carrier effective masses and the long-range behavior of the dielectric function by comparing them with the canonical conditions of the Wannier-Mott model. Furthermore, we derive chemically intuitive rules for predicting the nature of excitons in halide double perovskites using computationally inexpensive density functional theory calculations.
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Affiliation(s)
- Raisa-Ioana Biega
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
| | - Yinan Chen
- Department
of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, United Kingdom
| | - Marina R. Filip
- Department
of Physics, University of Oxford, Clarendon Laboratory, Oxford OX1 3PU, United Kingdom
| | - Linn Leppert
- MESA+
Institute for Nanotechnology, University
of Twente, 7500 AE Enschede, The Netherlands
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4
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Reidy K, Majchrzak PE, Haas B, Thomsen JD, Konečná A, Park E, Klein J, Jones AJH, Volckaert K, Biswas D, Watson MD, Cacho C, Narang P, Koch CT, Ulstrup S, Ross FM, Idrobo JC. Direct Visualization of Subnanometer Variations in the Excitonic Spectra of 2D/3D Semiconductor/Metal Heterostructures. Nano Lett 2023; 23:1068-1076. [PMID: 36637381 DOI: 10.1021/acs.nanolett.2c04749] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
The integration of metallic contacts with two-dimensional (2D) semiconductors is routinely required for the fabrication of nanoscale devices. However, nanometer-scale variations in the 2D/metal interface can drastically alter the local optoelectronic properties. Here, we map local excitonic changes of the 2D semiconductor MoS2 in contact with Au. We utilize a suspended and epitaxially grown 2D/metal platform that allows correlated electron energy-loss spectroscopy (EELS) and angle resolved photoelectron spectroscopy (nanoARPES) mapping. Spatial localization of MoS2 excitons uncovers an additional EELS peak related to the MoS2/Au interface. NanoARPES measurements indicate that Au-S hybridization decreases substantially with distance from the 2D/metal interface, suggesting that the observed EELS peak arises due to dielectric screening of the excitonic Coulomb interaction. Our results suggest that increasing the van der Waals distance could optimize excitonic spectra of mixed-dimensional 2D/3D interfaces and highlight opportunities for Coulomb engineering of exciton energies by the local dielectric environment or moiré engineering.
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Affiliation(s)
- Kate Reidy
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | | | - Benedikt Haas
- Department of Physics & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Joachim Dahl Thomsen
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Andrea Konečná
- Central European Institute of Technology, Brno University of Technology, 61200 Brno, Czech Republic
| | - Eugene Park
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Julian Klein
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Alfred J H Jones
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Klara Volckaert
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Deepnarayan Biswas
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Matthew D Watson
- Diamond Light Source, Harwell Campus, Didcot OX11 0DE, United Kingdom
| | - Cephise Cacho
- Diamond Light Source, Harwell Campus, Didcot OX11 0DE, United Kingdom
| | - Prineha Narang
- College of Letters and Science, Physical Sciences, UCLA, Los Angeles, California 90095, United States
| | - Christoph T Koch
- Department of Physics & IRIS Adlershof, Humboldt-Universität zu Berlin, 12489 Berlin, Germany
| | - Søren Ulstrup
- Department of Physics and Astronomy, Aarhus University, 8000 Aarhus C, Denmark
| | - Frances M Ross
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, United States
| | - Juan Carlos Idrobo
- Materials Science and Engineering Department, University of Washington, Seattle, Washington 98195, United States
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5
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Du M, Cui X, Zhang B, Sun Z. Deterministic Light-to-Voltage Conversion with a Tunable Two-Dimensional Diode. ACS Photonics 2022; 9:2825-2832. [PMID: 35996374 PMCID: PMC9389648 DOI: 10.1021/acsphotonics.2c00727] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 05/13/2022] [Indexed: 06/15/2023]
Abstract
Heterojunctions accompanied by energy barriers are of significant importance in two-dimensional materials-based electronics and optoelectronics. They provide more functional device performance, compared with their counterparts with uniform channels. Multimodal optoelectronic devices could be accomplished by elaborately designing band diagrams and architectures of the two-dimensional junctions. Here, we demonstrate deterministic light-to-voltage conversion based on strong dielectric screening effect in a tunable two-dimensional Schottky diode based on semiconductor/metal heterostructure, where the resultant photovoltage is dependent on the intensity of light input but independent of gate voltage. The converted photovoltage across the diode is independent of gate voltage under both monochromatic laser and white light illumination. In addition, the Fermi level of two-dimensional semiconductor area on dielectric SiO2 is highly gate-dependent, leading to the tunable rectifying effect of this heterostructure, which corporates a vertical Schottky junction and a lateral homojunction. As a result, a constant open-circuit voltage of ∼0.44 V and a hybrid "photovoltaic + photoconduction" photoresponse behavior are observed under 1 μW illumination of 403 nm laser, in addition to an electrical rectification ratio up to nearly 104. The scanning photocurrent mappings under different bias voltages indicate that the switchable operation mode (photovoltaic, photoconduction, or hybrid) depends on the bias-dependent effective energy barrier at the two-dimensional semiconductor-metal interface. This approach provides a facile and reliable solution for deterministic on-chip light-to-voltage conversion and optical-to-electrical interconnects.
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Affiliation(s)
- Mingde Du
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Xiaoqi Cui
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
| | - Bin Zhang
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
- Key
Laboratory of In-Fiber Integrated Optics of Ministry of Education,
College of Physics and Optoelectronic Engineering, Harbin Engineering University, Harbin 150001, China
| | - Zhipei Sun
- Department
of Electronics and Nanoengineering, Aalto
University, Espoo FI-02150, Finland
- QTF
Centre of Excellence, Department of Applied Physics, Aalto University, Espoo FI-00076, Finland
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6
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Comin M, Fratini S, Blase X, D'Avino G. Doping-Induced Dielectric Catastrophe Prompts Free-Carrier Release in Organic Semiconductors. Adv Mater 2022; 34:e2105376. [PMID: 34647372 DOI: 10.1002/adma.202105376] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2021] [Revised: 09/27/2021] [Indexed: 06/13/2023]
Abstract
The control over material properties attainable through molecular doping is essential to many technological applications of organic semiconductors, such as organic light-emitting diodes or thermoelectrics. These excitonic semiconductors typically reach the degenerate limit only at impurity concentrations of 5-10%, a phenomenon that has been put in relation with the strong Coulomb binding between charge carriers and ionized dopants, and whose comprehension remained elusive so far. This study proposes a general mechanism for the release of carriers at finite doping in terms of collective screening phenomena. A multiscale model for the dielectric properties of doped organic semiconductor is set up by combining first principles and microelectrostatic calculations. The results predict a large nonlinear enhancement of the dielectric constant (tenfold at 8% load) as the system approaches a dielectric instability (catastrophe) upon increasing doping. This can be attributed to the presence of highly polarizable host-dopant complexes, plus a nontrivial leading contribution from dipolar interactions in the disordered and heterogeneous system. The enhanced screening in the material drastically reduces the (free) energy barriers for electron-hole separation, rationalizing the possibility for thermal charge release. The proposed mechanism is consistent with conductivity data and sets the basis for achieving higher conductivities at lower doping loads.
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Affiliation(s)
- Massimiliano Comin
- Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, Grenoble, 38042, France
| | - Simone Fratini
- Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, Grenoble, 38042, France
| | - Xavier Blase
- Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, Grenoble, 38042, France
| | - Gabriele D'Avino
- Grenoble Alpes University, CNRS, Grenoble INP, Institut Néel, 25 rue des Martyrs, Grenoble, 38042, France
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7
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Prins PT, Alimoradi Jazi M, Killilea NA, Evers WH, Geiregat P, Heiss W, Houtepen AJ, Delerue C, Hens Z, Vanmaekelbergh D. The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors. Nano Lett 2021; 21:9426-9432. [PMID: 34780185 PMCID: PMC8631736 DOI: 10.1021/acs.nanolett.1c02682] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/10/2021] [Revised: 11/09/2021] [Indexed: 06/13/2023]
Abstract
Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of low-dimensional versus bulk semiconductors has remained elusive. Here, we report generality in the band-edge light absorptance of semiconductors, independent of their dimensions. First, we provide atomistic tight-binding calculations that show that the absorptance of semiconductor quantum wells equals mπα (m = 1 or 2 with α as the fine-structure constant), in agreement with reported experimental results. Then, we show experimentally that a monolayer (superlattice) of quantum dots has similar absorptance, suggesting an absorptance quantum of mπα per (confined) exciton diameter. Extending this idea to bulk semiconductors, we experimentally demonstrate that an absorptance quantum equal to mπα per exciton Bohr diameter explains their widely varying absorption coefficients. We thus provided compelling evidence that the absorptance quantum πα per exciton diameter rules the band-edge absorption of all direct semiconductors, regardless of their dimension.
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Affiliation(s)
- P. Tim Prins
- Debye
Institute for Nanomaterials Science, Utrecht
University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Maryam Alimoradi Jazi
- Debye
Institute for Nanomaterials Science, Utrecht
University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
| | - Niall A. Killilea
- Institute
- Materials for Electronics and Energy Technology, Materials Science
Department, Friedrich-Alexander-Universität
Erlangen-Nürnberg, Fürther Straße 250, Nürnberg 90429, Germany
| | - Wiel H. Evers
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Pieter Geiregat
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Krijgslaan 281, B-9000 Ghent, Belgium
| | - Wolfgang Heiss
- Institute
- Materials for Electronics and Energy Technology, Materials Science
Department, Friedrich-Alexander-Universität
Erlangen-Nürnberg, Fürther Straße 250, Nürnberg 90429, Germany
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Department of Chemical Engineering, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The Netherlands
| | - Christophe Delerue
- University
of Lille, CNRS, Centrale Lille, University Polytechnique Hauts-de-France, Junia, UMR 8520 - IEMN, F-59000 Lille, France
| | - Zeger Hens
- Physics
and Chemistry of Nanostructures, Department of Chemistry, Ghent University, Krijgslaan 281, B-9000 Ghent, Belgium
| | - Daniel Vanmaekelbergh
- Debye
Institute for Nanomaterials Science, Utrecht
University, Princetonplein 1, 3584 CC Utrecht, The Netherlands
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8
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Scolfaro D, Finamor M, Trinchão LO, Rosa BLT, Chaves A, Santos PV, Iikawa F, Couto ODD. Acoustically Driven Stark Effect in Transition Metal Dichalcogenide Monolayers. ACS Nano 2021; 15:15371-15380. [PMID: 34450007 DOI: 10.1021/acsnano.1c06854] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The Stark effect is one of the most efficient mechanisms to manipulate many-body states in nanostructured systems. In mono- and few-layer transition metal dichalcogenides, it has been successfully induced by optical and electric field means. Here, we tune the optical emission energies and dissociate excitonic states in MoSe2 monolayers employing the 220 MHz in-plane piezoelectric field carried by surface acoustic waves. We transfer the monolayers to high dielectric constant piezoelectric substrates, where the neutral exciton binding energy is reduced, allowing us to efficiently quench (above 90%) and red-shift the excitonic optical emissions. A model for the acoustically induced Stark effect yields neutral exciton and trion in-plane polarizabilities of 530 and 630 × 10-5 meV/(kV/cm)2, respectively, which are considerably larger than those reported for monolayers encapsulated in hexagonal boron nitride. Large in-plane polarizabilities are an attractive ingredient to manipulate and modulate multiexciton interactions in two-dimensional semiconductor nanostructures for optoelectronic applications.
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Affiliation(s)
- Diego Scolfaro
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Matheus Finamor
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Luca O Trinchão
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Bárbara L T Rosa
- Departamento de Fisica, Universidade Federal de Minas Gerais (UFMG), 30123-970 Belo Horizonte, Brazil
| | - Andrey Chaves
- Departamento de Física, Universidade Federal do Ceará, Caixa Postal 6030, Campus do Pici, 60455-900 Fortaleza, Ceará, Brazil
- Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020, Antwerp, Belgium
| | - Paulo V Santos
- Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5-7, 10117 Berlin, Germany
| | - Fernando Iikawa
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
| | - Odilon D D Couto
- Instituto de Física "Gleb Wataghin", Universidade Estadual de Campinas, 13083-859 Campinas, Brazil
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9
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Wang B, Kim S, Zhai T, Seok J, Yang H, Salas-Montiel R. Near-field probing of dielectric screening by hexagonal boron nitride in graphene integrated on silicon photonics. Nanotechnology 2021; 32:315207. [PMID: 33892483 DOI: 10.1088/1361-6528/abfb31] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/19/2021] [Accepted: 04/23/2021] [Indexed: 06/12/2023]
Abstract
Hexagonal boron nitride (hBN) is one of the most suitable 2D materials for supporting graphene in electronic devices, and it plays a fundamental role in screening out the effect of charge impurities in graphene in contrast to inhomogeneous supports such as silicon dioxide (SiO2). Although many interesting surface science techniques such as scanning tunneling microscopy (STM) revealed dielectric screening by hBN and emergent physical phenomena were observed, STM is only appropriate for graphene electronics. In this paper, we demonstrate the dielectric screening by hBN in graphene integrated on a silicon photonic waveguide from the perspective of a near-field scanning optical microscopy (NSOM) and Raman spectroscopy. We found shifts in the Raman spectra and about three times lower slope decrease in the measured electric near-field amplitude for graphene on hBN relative to that for graphene on SiO2. Based on finite-difference time-domain simulations, we confirm lower electric field slope and scattering rate in graphene on hBN, which implies dielectric screening, in agreement with the NSOM signal. Graphene on hBN integrated on silicon photonics can pave the way for high-performance hybrid graphene photonics.
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Affiliation(s)
- Binbin Wang
- Light, Nanomaterials, Nanotechnologies (L2n) Laboratory, CNRS ERL 7004, University of Technology of Troyes,10004 Troyes, France
- Key Laboratory of Light-Field Manipulation and Information Acquisition, Ministry of Industry and Information Technology, School of Science, Northwestern Polytechnical University, Xi'an 710072, People's Republic of China
| | - Sera Kim
- Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Tingting Zhai
- Light, Nanomaterials, Nanotechnologies (L2n) Laboratory, CNRS ERL 7004, University of Technology of Troyes,10004 Troyes, France
| | - Jinbong Seok
- Department of Energy Science, Sungkyunkwan University, Suwon 440-746, Republic of Korea
| | - Heejun Yang
- Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 34141, Republic of Korea
| | - Rafael Salas-Montiel
- Light, Nanomaterials, Nanotechnologies (L2n) Laboratory, CNRS ERL 7004, University of Technology of Troyes,10004 Troyes, France
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10
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Hou X, Qin H, Peng X. Enhancing Dielectric Screening for Auger Suppression in CdSe/CdS Quantum Dots by Epitaxial Growth of ZnS Shell. Nano Lett 2021; 21:3871-3878. [PMID: 33938759 DOI: 10.1021/acs.nanolett.1c00396] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Auger recombination is the main nonradiative process in multicarrier states of high-quality quantum dots (QDs). For the most-studied CdSe/CdS core/shell QDs, we effectively reduce the biexciton Auger rate by enhancing dielectric screening of band-edge carriers via epitaxial growth of additional ZnS shells. Super volume scaling of negative-trion Auger lifetime for CdSe/CdS core/shell QDs is achieved with the outermost ZnS shells. The volume of CdSe/CdS/ZnS QDs can be less than half that of CdSe/CdS QDs with the same negative-trion Auger lifetime. Auger suppression by the ZnS shells is more pronounced for QDs with wave functions of band-edge carriers spreading close to the inorganic-organic interface, such as CdSe/CdS QDs with small cores. A maximum drop of biexciton Auger rate of ∼50% and a maximum enhancement of biexciton emission quantum yield of 75% are achieved. Auger engineering by dielectric screening opens up new opportunities to improve the emission properties of multicarrier states in QDs.
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Affiliation(s)
- Xiaoqi Hou
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
- Key Laboratory of Intelligent Sensing Materials and Chip Integration Technology of Zhejiang Province, Hangzhou Innovation Institute, Beihang University, Hangzhou, 310051, P.R. China
| | - Haiyan Qin
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
| | - Xiaogang Peng
- Key Laboratory of Excited-State Materials of Zhejiang Province, and Department of Chemistry, Zhejiang University, Hangzhou, 310027, P. R. China
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11
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Shang JY, Moody MJ, Chen J, Krylyuk S, Davydov AV, Marks TJ, Lauhon LJ. In situ transport measurements reveal source of mobility enhancement of MoS 2 and MoTe 2 during dielectric deposition. ACS Appl Electron Mater 2020; 2:1273-1279. [PMID: 33313511 PMCID: PMC7727257 DOI: 10.1021/acsaelm.0c00085] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Layered transition metal dichalcogenides (TMDs) and other two-dimensional (2D) materials are promising candidates for enhancing the capabilities of complementary metal-oxide-semiconductor (CMOS) technology. Field-effect transistors (FETs) made with 2D materials often exhibit mobilities below their theoretical limit, and strategies such as encapsulation with dielectrics grown by atomic layer deposition (ALD) have been explored to tune carrier concentration and improve mobility. While molecular adsorbates are known to dope 2D materials and influence charge scattering mechanisms, it is not well understood how ALD reactants affect 2D transistors during growth, motivating in situ or operando studies. Here, we report electrical characterization of MoS2 and MoTe2 FETs during ALD of MoOx. The field effect mobility improves significantly within the first five cycles of ALD growth using Mo(NMe2)4 as the metal-organic precursor and H2O as the oxidant. Analyses of the in situ transconductance at the growth temperature and ex situ variable temperature transconductance measurements indicate that the majority of the mobility enhancement observed at the beginning of dielectric growth is due to screening of charged impurity scattering by the adlayer. Control experiments show that exposure to only H2O or O2 induces more modest and reversible electronic changes in MoTe2 FETs, indicating that negligible oxidation of the TMD takes place during the ALD process. Due to the strong influence of the first <2 nm of deposition, when the dielectric adlayer may be discontinuous and still evolving in stoichiometry, this work highlights the need for further assessment of nucleation layers and initial deposition chemistry, which may be more important than the bulk composition of the oxide itself in optimizing performance and reproducibility.
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Affiliation(s)
- Ju Ying Shang
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
| | - Michael J. Moody
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
| | - Jiazhen Chen
- Department of Chemistry, Northwestern University, Evanston, IL 60208, United States
| | - Sergiy Krylyuk
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Albert V. Davydov
- Materials Science and Engineering Division, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States
| | - Tobin J. Marks
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
- Department of Chemistry, Northwestern University, Evanston, IL 60208, United States
| | - Lincoln J. Lauhon
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208, United States
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12
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Schmidt ME, Muruganathan M, Kanzaki T, Iwasaki T, Hammam AMM, Suzuki S, Ogawa S, Mizuta H. Dielectric-Screening Reduction-Induced Large Transport Gap in Suspended Sub-10 nm Graphene Nanoribbon Functional Devices. Small 2019; 15:e1903025. [PMID: 31573772 DOI: 10.1002/smll.201903025] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2019] [Revised: 08/15/2019] [Indexed: 06/10/2023]
Abstract
The predicted quasiparticle energy gap of more than 1 eV in sub-6 nm graphene nanoribbons (GNRs) is elusive, as it is strongly suppressed by the substrate dielectric screening. The number of techniques that can produce suspended high-quality and electrically contacted GNRs is small. The helium ion beam milling technique is capable of achieving sub-5 nm patterning; however, the functional device fabrication and the electrical characteristics are not yet reported. Here, the electrical transport measurement of suspended ≈6 nm wide mono- and bilayer GNR functional devices is reported, which are obtained through sub-nanometer resolution helium ion beam milling with controlled total helium ion budget. The transport gap opening of 0.16-0.8 eV is observed at room temperature. The measured transport gap of the different edge orientated GNRs is in good agreement with first-principles simulation results. The enhanced electron-electron interaction and reduced dielectric screening in the suspended quasi-1D GNRs and anti-ferromagnetic coupling between opposite edges in the zigzag GNRs substantiate the observed large transport gap.
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Affiliation(s)
- Marek E Schmidt
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
| | - Manoharan Muruganathan
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
| | - Teruhisa Kanzaki
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
| | - Takuya Iwasaki
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
| | - Ahmed M M Hammam
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
- Physics Department, Faculty of Science, Minia University, 11432 Main Road-Shalaby Land, Minia, 61519, Egypt
| | - Shunei Suzuki
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
| | - Shinichi Ogawa
- Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), 16-1 Onogawa, Tsukuba, 305-8569, Japan
| | - Hiroshi Mizuta
- School of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Nomi, Ishikawa, 923-1292, Japan
- Hitachi Cambridge Laboratory, Hitachi Europe Ltd., J. J. Thomson Avenue, Cambridge, CB3 0HE, UK
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13
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Florian M, Hartmann M, Steinhoff A, Klein J, Holleitner AW, Finley JJ, Wehling TO, Kaniber M, Gies C. The Dielectric Impact of Layer Distances on Exciton and Trion Binding Energies in van der Waals Heterostructures. Nano Lett 2018; 18:2725-2732. [PMID: 29558797 DOI: 10.1021/acs.nanolett.8b00840] [Citation(s) in RCA: 36] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/08/2023]
Abstract
The electronic and optical properties of monolayer transition-metal dichalcogenides (TMDs) and van der Waals heterostructures are strongly subject to their dielectric environment. In each layer, the field lines of the Coulomb interaction are screened by the adjacent material, which reduces the single-particle band gap as well as exciton and trion binding energies. By combining an electrostatic model for a dielectric heteromultilayered environment with semiconductor many-particle methods, we demonstrate that the electronic and optical properties are sensitive to the interlayer distances on the atomic scale. An analytic treatment is used to provide further insight into how the interlayer gap influences different excitonic transitions. Spectroscopical measurements in combination with a direct solution of a three-particle Schrödinger equation reveal trion binding energies that correctly predict recently measured interlayer distances and shed light on the effect of temperature annealing.
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Affiliation(s)
- Matthias Florian
- Institut für Theoretische Physik , Universität Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - Malte Hartmann
- Institut für Theoretische Physik , Universität Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - Alexander Steinhoff
- Institut für Theoretische Physik , Universität Bremen , P.O. Box 330 440, 28334 Bremen , Germany
| | - Julian Klein
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstrasse 4 , 80799 München , Germany
| | - Alexander W Holleitner
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstrasse 4 , 80799 München , Germany
| | - Jonathan J Finley
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstrasse 4 , 80799 München , Germany
| | - Tim O Wehling
- Institut für Theoretische Physik , Universität Bremen , P.O. Box 330 440, 28334 Bremen , Germany
- Bremen Center for Computational Materials Science , Universität Bremen , 28334 Bremen , Germany
| | - Michael Kaniber
- Walter Schottky Institut and Physik Department , Technische Universität München , Am Coulombwall 4 , 85748 Garching , Germany
- Nanosystems Initiative Munich (NIM) , Schellingstrasse 4 , 80799 München , Germany
| | - Christopher Gies
- Institut für Theoretische Physik , Universität Bremen , P.O. Box 330 440, 28334 Bremen , Germany
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14
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Abstract
Since graphene became available by a scotch tape technique, a vast class of two-dimensional (2D) van der Waals (vdW) layered materials has been researched intensively. What is more intriguing is that the well-known physics and chemistry of three-dimensional (3D) bulk materials are often irrelevant, revealing exotic phenomena in 2D vdW materials. By further constructing heterostructures of these materials in the planar and vertical directions, which can be easily achieved via simple exfoliation techniques, numerous quantum mechanical devices have been demonstrated for fundamental research and technological applications. It is, therefore, necessary to review the special features in 2D vdW materials and to discuss the remaining issues and challenges. Here, we review the vdW materials library, technology relevance, and specialties of vdW materials covering the vdW interaction, strong Coulomb interaction, layer dependence, dielectric screening engineering, work function modulation, phase engineering, heterostructures, stability, growth issues, and the remaining challenges.
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Affiliation(s)
- Dinh Loc Duong
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS) , Suwon 16419, Republic of Korea
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15
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Stier AV, Wilson NP, Clark G, Xu X, Crooker SA. Probing the Influence of Dielectric Environment on Excitons in Monolayer WSe 2: Insight from High Magnetic Fields. Nano Lett 2016; 16:7054-7060. [PMID: 27718588 DOI: 10.1021/acs.nanolett.6b03276] [Citation(s) in RCA: 66] [Impact Index Per Article: 8.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
Excitons in atomically thin semiconductors necessarily lie close to a surface, and therefore their properties are expected to be strongly influenced by the surrounding dielectric environment. However, systematic studies exploring this role are challenging, in part because the most readily accessible exciton parameter-the exciton's optical transition energy-is largely unaffected by the surrounding medium. Here we show that the role of the dielectric environment is revealed through its systematic influence on the size of the exciton, which can be directly measured via the diamagnetic shift of the exciton transition in high magnetic fields. Using exfoliated WSe2 monolayers affixed to single-mode optical fibers, we tune the surrounding dielectric environment by encapsulating the flakes with different materials and perform polarized low-temperature magneto-absorption studies to 65 T. The systematic increase of the exciton's size with dielectric screening, and concurrent reduction in binding energy (also inferred from these measurements), is quantitatively compared with leading theoretical models. These results demonstrate how exciton properties can be tuned in future 2D optoelectronic devices.
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Affiliation(s)
- Andreas V Stier
- National High Magnetic Field Laboratory , Los Alamos, New Mexico 87545, United States
| | - Nathan P Wilson
- Department of Physics, University of Washington , Seattle, Washington 98195, United States
| | - Genevieve Clark
- Department of Materials Science, University of Washington , Seattle, Washington 98195, United States
| | - Xiaodong Xu
- Department of Physics, University of Washington , Seattle, Washington 98195, United States
- Department of Materials Science, University of Washington , Seattle, Washington 98195, United States
| | - Scott A Crooker
- National High Magnetic Field Laboratory , Los Alamos, New Mexico 87545, United States
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16
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Raja A, Montoya Castillo A, Zultak J, Zhang XX, Ye Z, Roquelet C, Chenet DA, van der Zande AM, Huang P, Jockusch S, Hone J, Reichman DR, Brus LE, Heinz TF. Energy Transfer from Quantum Dots to Graphene and MoS2: The Role of Absorption and Screening in Two-Dimensional Materials. Nano Lett 2016; 16:2328-33. [PMID: 26928675 DOI: 10.1021/acs.nanolett.5b05012] [Citation(s) in RCA: 84] [Impact Index Per Article: 10.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/24/2023]
Abstract
We report efficient nonradiative energy transfer (NRET) from core-shell, semiconducting quantum dots to adjacent two-dimensional sheets of graphene and MoS2 of single- and few-layer thickness. We observe quenching of the photoluminescence (PL) from individual quantum dots and enhanced PL decay rates in time-resolved PL, corresponding to energy transfer rates of 1-10 ns(-1). Our measurements reveal contrasting trends in the NRET rate from the quantum dot to the van der Waals material as a function of thickness. The rate increases significantly with increasing layer thickness of graphene, but decreases with increasing thickness of MoS2 layers. A classical electromagnetic theory accounts for both the trends and absolute rates observed for the NRET. The countervailing trends arise from the competition between screening and absorption of the electric field of the quantum dot dipole inside the acceptor layers. We extend our analysis to predict the type of NRET behavior for the near-field coupling of a chromophore to a range of semiconducting and metallic thin film materials.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | | | | | | | | | - Tony F Heinz
- Departments of Applied Physics and Photon Science, Stanford University , Stanford, California 94305, United States
- SLAC National Accelerator Laboratory , Menlo Park, California 94025, United States
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17
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Lin Y, Ling X, Yu L, Huang S, Hsu AL, Lee YH, Kong J, Dresselhaus MS, Palacios T. Dielectric screening of excitons and trions in single-layer MoS2. Nano Lett 2014; 14:5569-76. [PMID: 25216267 DOI: 10.1021/nl501988y] [Citation(s) in RCA: 212] [Impact Index Per Article: 21.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Photoluminescence (PL) properties of single-layer MoS2 are indicated to have strong correlations with the surrounding dielectric environment. Blue shifts of up to 40 meV of exciton or trion PL peaks were observed as a function of the dielectric constant of the environment. These results can be explained by the dielectric screening effect of the Coulomb potential; based on this, a scaling relationship was developed with the extracted electronic band gap and exciton and trion binding energies in good agreement with theoretical estimations. It was also observed that the trion/exciton intensity ratio can be tuned by at least 1 order of magnitude with different dielectric environments. Our findings are helpful to better understand the tightly bound exciton properties in strongly quantum-confined systems and provide a simple approach to the selective and separate generation of excitons or trions with potential applications in excitonic interconnects and valleytronics.
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Affiliation(s)
- Yuxuan Lin
- Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology , Cambridge, Massachusetts 02139, United States
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18
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Abstract
The electronic structure and dielectric screening of finite-length armchair carbon nanotubes are studied with both tight-binding and ab initio methods. Good agreement is found in the band gap oscillation patterns and dielectric constants, which validates the tight-binding method as a reliable and fast approach to describe the screening effect of carbon nanotubes. For an illustration, our method is applied to a system consisting of a short (6,6) nanotube filled with six water molecules. Substantial screening of the water dipoles through the nanotube is observed. This polarization effect should have an important influence on the permeation of water and other biomolecules inside carbon nanotubes.
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Affiliation(s)
- Yan Li
- Beckman Institute, University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA,
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