Surface Passivation to Enhance the Interfacial Pyro-Phototronic Effect for Self-Powered Photodetection Based on Perovskite Single Crystals

The interfacial pyro-phototronic effect (IPPE) presents a novel approach for improving the performance of self-powered photodetectors (PDs) based on metal halide perovskites (MHPs). The interfacial contact conditions within the Schottky junctions are crucial in facilitating the IPPE phenomenon. However, the fabrication of an ideal Schottky junction utilizing MHPs is a challenging endeavor. In this study, we present a surface passivation method aimed at enhancing the performance of self-powered photodetectors based on inverted planar perovskite structures in micro- and nanoscale metal-halide perovskite SCs. Our findings demonstrate that the incorporation of a lead halide salt with a benzene ring moiety for surface passivation leads to a substantial improvement in photoresponses by means of the IPPE. Conversely, the inclusion of an alkane chain in the salt impedes the IPPE. The underlying mechanism can be elucidated through an examination of the band structure, particularly the work function (WF) modulated by surface passivation. Consequently, this alteration affects the band bending and the built-in field (VBi) at the interface. This strategy presents a feasible and effective method for producing interfacial pyroelectricity in MHPs, thus facilitating its potential application in practical contexts such as energy conversion and infrared sensors.

Synchronous Regulation Strategy of Pyrrolidinium Thiocyanate Enables Efficient Perovskite Solar Cells and Self-Powered Photodetectors

Developing inventive approaches to control crystallization and suppress trap defects in perovskite films is crucial for achieving efficient perovskite photovoltaics. Here, a synchronous regulation strategy is developed that involves the infusion of a zwitterionic ionic liquid additive, pyrrolidinium thiocyanate (PySCN), into the perovskite precursor to optimize the subsequent crystallization and defects. PySCN modification not only orchestrates the crystallization process but also deftly addresses trap defects in perovskite films. Within this, SCN- compensates for positively charged defects, while Py+ plays the role of passivating negatively charged defects. Based on the vacuum flash evaporation without anti-solvent, the air-processed perovskite solar cells (PSCs) with PySCN modification can achieve an extraordinary champion efficiency of 22.46% (0.1 cm2 ) and 21.15% (1.0 cm2 ) with exceptional stability surpassing 1200 h. Further, the self-powered photodetector goes above and beyond, showcasing an ultra-low dark current of 2.13 × 10-10 A·cm-2 , a specific detection rate of 6.12 × 1013  Jones, and an expansive linear dynamic range reaching an astonishing 122.49 dB. PySCN modification not only signifies high efficiency but also ushers in a new era for crystallization regulation, promising a transformative impact on the optoelectronic performance of perovskite-based devices.

Element Diffusion Induced Carrier Transport Enhancement in High-Performance CZTSSe Self-Powered Photodetector

Cu2 ZnSn(S,Se)4 (CZTSSe) has attracted great interest in thin-film solar cells due to its excellent photoelectric performance in past decades, and recently is gradually expanding to the field of photodetectors. Here, the CZTSSe self-powered photodetector is prepared by using traditional photovoltaic device structure. Under zero bias, it exhibits the excellent performance with a maximum responsivity of 0.77 A W-1 , a high detectivity of 8.78 × 1012 Jones, and a wide linear dynamic range of 103 dB. Very fast response speed with the rise/decay times of 0.576/1.792 µs, and ultra-high switching ratio of 3.54 × 105 are obtained. Comprehensive electrical and microstructure characterizations confirm that element diffusion among ITO, CdS, and CZTSSe layers not only optimizes band alignment of CdS/CZTSSe, but also suppresses the formation of interface defects. Such a suppression of interface defects and spike-like band alignment significantly inhibit carrier nonradiative recombination at interface and promote carrier transport capability. The low trap density in CZTSSe and low back contact barrier of CZTSSe/Mo could be responsible for the very fast response time of photodetector. This work definitely provides guidance for designing a high performance self-powered photodetector with high photoresponse, high switching ratio, fast response speed, and broad linear dynamic range.

Direct Z-Scheme Heterostructure of Vertically Oriented SnS2 Nanosheet on BiVO4 Nanoflower for Self-Powered Photodetectors and Water Splitting

The construction of nanostructured Z-scheme heterostructure is a powerful strategy for realizing high-performance photoelectrochemical (PEC) devices such as self-powered photodetectors and water splitting. Considering the band structure and internal electric field direction, BiVO4 is a promising candidate to construct SnS2 -based heterostructure. Herein, the direct Z-scheme heterostructure of vertically oriented SnS2 nanosheet on BiVO4 nanoflower is rationally fabricated for efficient self-powered PEC photodetectors. The Z-scheme heterostructure is identified by ultraviolet photoelectron spectroscopy, photoluminescence spectroscopy, PEC measurement, and water splitting. The SnS2 /BiVO4 heterostructure shows a superior photodetection performance such as excellent photoresponsivity (10.43 mA W-1 ), fast response time (6 ms), and long-term stability. Additionally, by virtue of efficient Z-scheme charge transfer and unique light-trapping nanostructure, the SnS2 /BiVO4 heterostructure also displays a remarkable photocatalytic hydrogen production rate of 54.3 µmol cm-2 h-1 in Na2 SO3 electrolyte. Furthermore, the synergistic effect between photo-activation and bias voltage further improves the PEC hydrogen production rate of 360 µmol cm-2 h-1 at 0.8 V, which is an order of magnitude above the BiVO4 . The results provide useful inspiration for designing direct Z-scheme heterostructures with special nanostructured morphology to signally promote the performance of PEC devices.

In Situ Defect Engineering of Controllable Carrier Types in WSe2 for Homomaterial Inverters and Self-Powered Photodetectors

WSe2 has a high mobility of electrons and holes, which is an ideal choice as active channels of electronics in extensive fields. However, carrier-type tunability of WSe2 still has enormous challenges, which are essential to overcome for practical applications. In this work, the direct growth of n-doped few-layer WSe2 is realized via in situ defect engineering. The n-doping of WSe2 is attributed to Se vacancies induced by the H2 flow purged in the cooling process. The electrical measurements based on field effect transistors demonstrate that the carrier type of WSe2 synthesized is successfully transferred from the conventional p-type to the rarely reported n-type. The electron carrier concentration is efficiently modulated by the concentration of H2 during the cooling process. Furthermore, homomaterial inverters and self-powered photodetectors are fabricated based on the doping-type-tunable WSe2. This work reveals a significant way to realize the controllable carrier type of two-dimensional (2D) materials, exhibiting great potential in future 2D electronics engineering.

A Self-Powered UV Photodetector With Ultrahigh Responsivity Based on 2D Perovskite Ferroelectric Films With Mixed Spacer Cations

Self-powered photodetectors (PDs) have the advantages of no external power requirement, wireless operation, and long life. Spontaneous ferroelectric polarizations can significantly increase built-in electric field intensity, showing great potential in self-powered photodetection. Moreover, ferroelectrics possess pyroelectric and piezoelectric properties, beneficial for enhancing self-powered PDs. 2D metal halide perovskites (MHPs), which have ferroelectric properties, are suitable for fabricating high-performance self-powered PDs. However, the research on 2D metal halide perovskites ferroelectrics focuses on growing bulk crystals. Herein, 2D ferroelectric perovskite films with mixed spacer cations for self-powered PDs are demonstrated by mixing Ruddlesden-Popper (RP)-type and Dion-Jacobson (DJ)-type perovskite. The (BDA0.7 (BA2 )0.3 )(EA)2 Pb3 Br10 film possesses, overall, the best film qualities with the best crystalline quality, lowest trap density, good phase purity, and obvious ferroelectricity. Based on the ferro-pyro-phototronic effect, the PD at 360 nm exhibits excellent photoelectric properties, with an ultrahigh peak responsivity greater than 93 A W-1 and a detectivity of 2.5 × 1015 Jones, together with excellent reproducibility and stability. The maximum responsivities can be modulated by piezo-phototronic effect with an effective enhancement ratio of 480%. This work will open up a new route of designing MHP ferroelectric films for high-performance PDs and offers the opportunity to utilize it for various optoelectronics applications.

Pyro-Phototronic Effect in All-Inorganic Two-Dimensional Ruddlesden-Popper Ferroelectric Perovskite Thin-films and Photodetection

Ferroelectric perovskites, where ferroelectricity is embedded in the structure, are being considered for different device applications. In this study, we introduce Cs2PbI2Cl2, an all-inorganic 2D Ruddlesden-Popper (RP) halide perovskite, as a ferroelectric material suitable for pyro-phototronic applications. Thin-films of the all-inorganic perovskite are successfully cast, and they demonstrate ferroelectric properties. Unlike hybrid materials, the ferroelectricity in Cs2PbI2Cl2 does not rely on the organic moiety possessing an electric dipole moment. Instead, the 2D-layer-forming octahedra are twisted and tilted due to a distortion in the bond lengths, leading to the emergence of spontaneous electric polarization. Based on the properties, we fabricate p-i-n heterojunctions by integrating the perovskite with carrier-transport layers. To determine the band-energies of the materials, scanning tunneling spectroscopy and Kelvin probe force microscopy are employed. The band-edges evidence a type-II band-alignment at both interfaces, enabling the material to exhibit both photovoltaic and pyroelectric behaviors when subjected to pulsed illumination. The devices based on the all-inorganic RP perovskite developed in this study exhibit pyro-phototronic effects and serve as self-powered photodetectors without any need for an external bias.

Disentangling the Role of the SnO Layer on the Pyro-Phototronic Effect in ZnO-Based Self-Powered Photodetectors

Self-powered photodetectors (PDs) have been recognized as one of the developing trends of next-generation optoelectronic devices. Herein, it is shown that by introducing a thin layer of SnO film between the Si substrate and the ZnO film, the self-powered photodetector Al/Si/SnO/ZnO/ITO exhibits a stable and uniform violet sensing ability with high photoresponsivity and fast response. The SnO layer introduces a built-in electrostatic field to highly enhance the photocurrent by over 1000%. By analyzing energy diagrams of the p-n junction, the underlying physical mechanism of the self-powered violet PDs is carefully illustrated. A high photo-responsivity (R) of 93 mA W-1 accompanied by a detectivity (D*) of 3.1 × 1010 Jones are observed under self-driven conditions, when the device is exposed to 405 nm excitation laser wavelength, with a laser power density of 36 mW cm-2 and at a chopper frequency of 400 Hz. The Si/SnO/ZnO/ITO device shows an enhancement of 3067% in responsivity when compared to the Al/Si/ZnO/ITO. The photodetector holds an ultra-fast response of ≈ 2 µs, which is among the best self-powered photodetectors reported in the literature based on ZnO.

Boosting Charge Utilization in Self-Powered Photodetector for Real-Time High-Throughput Ultraviolet Communication

Ultraviolet (UV) communication is a cutting-edge technology in communication battlefields, and self-powered photodetectors as their optical receivers hold great potential. However, suboptimal charge utilization has largely limited the further performance enhancement of self-powered photodetectors for high-throughput communication application. Herein, a self-powered Ti3 C2 Tx -hybrid poly(3,4 ethylenedioxythiophene):poly-styrene sulfonate (PEDOT:PSS)/ZnO (TPZ) photodetector is designed, which aims to boost charge utilization for desirable applications. The device takes advantage of photothermal effect to intensify pyro-photoelectric effect as well as the increased conductivity of the PEDOT:PSS, which significantly facilitated charge separation, accelerated charge transport, and suppressed interface charge recombination. Consequently, the self-powered TPZ photodetector exhibits superior comprehensive performance with high responsivity of 12.3 mA W-1 and fast response time of 62.2 µs, together with outstanding reversible and stable cyclic operation. Furthermore, the TPZ photodetector has been successfully applied in an integrated UV communication system as the self-powered optical receiver capable of real-time high-throughput information transmission with ASCII code under 9600 baud rate. This work provides the design insight of highly performing self-powered photodetectors to achieve high-efficiency optical communication in the future.

Molecular Synergistic Passivation for Efficient Perovskite Solar Cells and Self-Powered Photodetectors

The interface between the perovskite and electron-transporting material is often treated for defect passivation to improve the photovoltaic performance of devices. A facile 4-Acetamidobenzoic acid (containing an acetamido, a carboxyl, and a benzene ring)-based molecular synergistic passivation (MSP) strategy is developed here to engineer the SnOx /perovskite interface, in which dense SnOx are prepared using an E-beam evaporation technology while the perovskite is deposited with vacuum flash evaporation deposition method. MSP engineering can synergistically passivate defects at the SnOx /perovskite interface by coordinating with Sn4+ and Pb2+ with functional group CO in the acetamido and carboxyl. The optimized solar cell devices can achieve the highest efficiency of 22.51% based on E-Beam deposited SnOx and 23.29% based on solution-processed SnO2 , respectively, accompanied by excellent stability exceeding 3000 h. Further, the self-powered photodetectors exhibit a remarkably low dark current of 5.22 × 10-9  A cm-2 , a response of 0.53 A W-1 at zero bias, a detection limit of 1.3 × 1013  Jones, and a linear dynamic range up to 80.4 dB. This work proposes a molecular synergistic passivation strategy to enhance the efficiency and responsivity of solar cells and self-powered photodetectors.

CH3NH3PbI3/Au/Mg0.2Zn0.8O Heterojunction Self-Powered Photodetectors with Suppressed Dark Current and Enhanced Detectivity

Interface engineering of the hole transport layer in CH₃NH₃PbI₃ photodetectors has resulted in significantly increased carrier accumulation and dark current as well as energy band mismatch, thus achieving the goal of high-power conversion efficiency. However, the reported heterojunction perovskite photodetectors exhibit high dark currents and low responsivities. Herein, heterojunction self-powered photodetectors, composed of p-type CH₃NH₃PbI₃ and n-type Mg_0.2Zn_0.8O, are prepared through the spin coating and magnetron sputtering. The obtained heterojunctions exhibit a high responsivity of 0.58 A/W, and the EQE of the CH₃NH₃PbI₃/Au/Mg_0.2Zn_0.8O heterojunction self-powered photodetectors is 10.23 times that of the CH₃NH₃PbI₃/Au photodetectors and 84.51 times that of the Mg_0.2ZnO_0.8/Au photodetectors. The built-in electric field of the p-n heterojunction significantly suppresses the dark current and improves the responsivity. Remarkably, in the self-supply voltage detection mode, the heterojunction achieves a high responsivity of up to 1.1 mA/W. The dark current of the CH₃NH₃PbI₃/Au/Mg_0.2Zn_0.8O heterojunction self-powered photodetectors is less than 1.4 × 10^-1 pA at 0 V, which is more than 10 times lower than that of the CH₃NH₃PbI₃ photodetectors. The best value of the detectivity is as high as 4.7 × 10¹² Jones. Furthermore, the heterojunction self-powered photodetectors exhibit a uniform photodetection response over a wide spectral range from 200 to 850 nm. This work provides guidance for achieving a low dark current and high detectivity for perovskite photodetectors.

Multilayer WSe2/ZnO heterojunctions for self-powered, broadband, and high-speed photodetectors

Self-powered broadband photodetectors have attracted great interest due to their applications in biomedical imaging, integrated circuits, wireless communication systems, and optical switches. Recently, significant research is being carried out to develop high-performance self-powered photodetectors based on thin 2D materials and their heterostructures due to their unique optoelectronic properties. Herein, a vertical heterostructure based on p-type 2D WSe₂and n-type thin film ZnO is realized for photodetectors with a broadband response in the wavelength range of 300-850 nm. Due to the formation of a built-in electric field at the WSe₂/ZnO interface and the photovoltaic effect, this structure exhibits a rectifying behavior with a maximum photoresponsivity and detectivity of ∼131 mA W^-1and ∼3.92 × 10¹⁰Jones, respectively, under an incident light wavelength ofλ= 300 nm at zero voltage bias. It also shows a 3-dB cut-off frequency of ∼300 Hz along with a fast response time of ∼496μs, making it suitable for high-speed self-powered optoelectronic applications. Furthermore, the facilitation of charge collection under reverse voltage bias results in a photoresponsivity as high as ∼7160 mA W^-1and a large detectivity of ∼1.18 × 10¹¹Jones at a bias voltage of -5 V. Hence, the p-WSe₂/n-ZnO heterojunction is proposed as an excellent candidate for high-performance, self-powered, and broadband photodetectors.

Light-Induced Electric Field Enhanced Self-Powered Photodetector Based on Van der Waals Heterojunctions

Self-powered photodetectors have attracted widespread attention due to their low power consumption which can be driven by the built-in electric field instead of external power, but it is very difficult to achieve high responsivity and fast response speed concurrently. Here, a self-powered photodetector with light-induced electric field enhancement based on a 2D InSe/WSe₂ /SnS₂ van der Waals heterojunction is designed. The light-induced electric field derived from the photo-generated electrons of SnS₂ accumulated at the SnS₂ /WSe₂ interface produces an additional negative gate voltage applied to the WSe₂ layer, which enhances the built-in electric field in the InSe/WSe₂ /SnS₂ heterojunction. Accordingly, the photocurrent and photoresponse speed of the heterostructure device are largely improved. The self-powered photodetector based on the InSe/WSe₂ /SnS₂ heterostructure exhibits a high responsivity of 550 mA W^-1 , which is a 50 times increase compared to the InSe/WSe₂ photodetector, and the response speed (110/120 µs) is one order of magnitude faster than that of the InSe/WSe₂ photodetector. The high responsivity and fast speed are caused by the stronger built-in electric field modulated by a light-induced electric field, which can separate carriers effectively and reduce drift times. This device architecture can provide a new avenue to fabricate high-responsivity, fast self-power photodetectors by utilizing the van der Waals heterojunction.

Ultrafast and Sensitive Self-Powered Photodetector Based on Graphene/Pentacene Single Crystal Heterostructure with Weak Light Detection Capacity

Organic materials exhibit efficient light absorption and low-temperature, large-scale processability, and have stimulated enormous research efforts for next-generation optoelectronics. While, high-performance organic devices with fast speed and high responsivity still face intractable challenges, due to their intrinsic limitations including finite carrier mobility and high exciton binding energy. Here an ultrafast and highly sensitive broadband phototransistor is demonstrated by integrating high-quality pentacene single crystal with monolayer graphene. Encouragingly, the -3 dB bandwidth can reach up to 26 kHz, which is a record-speed for such sensitized organic phototransistors. Enormous absorption, long exciton diffusion length of pentacene crystal, and efficient interfacial charge transfer enable a high responsivity of >10⁵  A W^-1  and specific detectivity of >10¹¹  Jones. Moreover, self-powered weak-light detection is realized using a simple asymmetric configuration, and the obvious zero-bias photoresponses can be displayed even under 750 nW cm^-2  light intensity. Excellent response speed and photoresponsivity enable high-speed image sensor capability in UV-Vis ranges.  The results offer a practical strategy for constructing high-performance self-powered organic hybrid photodetectors, with strong applicability in wireless, weak-light detection, and video-frame-rate imaging applications.

Flexible Omnidirectional Self-Powered Photodetectors Enabled by Solution-Processed Two-Dimensional Layered PbI2 Nanoplates

Realizing omnidirectional self-powered photodetectors is central to advancing next-generation portable and smart photodetector systems. However, the traditional omnidirectional photodetector is typically achieved by integrating complex hemispherical microlens on multiple photodetectors, which makes the detection system cumbersome and restricts its application in the portable field. Here, facile and high-performance flexible omnidirectional self-powered photodetectors are achieved by solution-processed two-dimensional (2D) layered PbI₂ nanoplates on transparent conducting substrates. Characterization of PbI₂ nanoplates microstructural/compositional and their photodetection properties have been systematically characterized. Under the irradiation of a 405 nm laser, the photodetectors exhibit an impressively low dark current of 10^-13 A, a high light on/off ratio up to 10⁶, and a fast rise/decay response time of 2/3 ms. Importantly, when light irradiates the photodetector at 5°, it can still maintain high photodetection properties, realizing almost 360° omnidirectional self-powered photodetection. What is more, these self-powered photodetectors exhibit robust omnidirectional photoresponse stability of flexibility even after bending for 1200 cycles. Thus, this work broadens the applicability of 2D layered nanoplates for further extending its applications in advanced optoelectronic devices.

Self-Powered Lithium Niobate Thin-Film Photodetectors

Thin-film lithium niobate platform, namely lithium-niobate-on-insulator (LNOI), brings new opportunities for integrated photonics, taking advantages from both outstanding crystalline properties and special structural features. The excellent properties of LNOI have triggered development of a variety of on-chip photonic devices for light generation and manipulation. However, as an indispensable component for photonic circuit with full functionalities, the thin-film photodetector lacks in portfolios of LNOI-based devices due to standing obstacles of low electrical conductivity and poor photoelectric conversion ability. Here, a self-powered broadband LNOI photodetector based on enhanced photovoltaic effect, benefitting from encapsulated plasmonic nanoparticles and doped silver ions, is reported. Maximum responsivity of 0.25 A W^-1 and detectivity (1.56 × 10¹⁴ Jones) are achieved. First-principle calculations and electric-field simulation reveal intrinsic mechanisms and crucial roles of plasmonic nanoparticles and silver ions on photocurrent generation and collection. This work opens an avenue to develop high-performance on-chip LNOI photodetectors, offering a conceivable means toward multiple-functional photonic circuits.

Polarization-Resolved p-Se/n-WS2 Heterojunctions toward Application in Microcomputer System as Multivalued Signal Trigger

Polarization-sensitive photodetectors based on van der Waals heterojunctions (vdWH) have excellent polarization-resolved optoelectronic properties that can enable the applications in polarized light identification and imaging. With the development of optical microcomputer control systems (OMCS), it is crucial and energy efficient to adopt the self-powered and polarization-resolved signal-generators to optimize the circuit design of OMCS. In this work, the selenium (Se) flakes with in-plane anisotropy and p-type character are grown and incorporated with n-type tungsten disulfide (WS₂ ) to construct the type-II vdWH for polarization-sensitive and self-powered photodetectors. Under 405 nm monochrome laser with 1.33 mW cm^-2 power density, the photovoltaic device exhibits superior photodetection performance with the photoelectric conversion efficiency (PCE) of 3.6%, the responsivity (R) of 196 mA W^-1 and the external quantum efficiency (EQE) of about 60%. The strong in-plane anisotropy of Se crystal structure gives rise to the capability of polarized light detection with anisotropic photocurrent ratio of ≈2.2 under the 405 nm laser (13.71 mW cm^-2 ). Benefiting from the well polarization-sensitive and photovoltaic properties, the p-Se/n-WS₂ vdWH is successfully applied in the OMCS as multivalued signal trigger. This work develops the new anisotropic vdWH and demonstrates its feasibility for applications in logic circuits and control systems.

Back Interface Passivation for Efficient Low-Bandgap Perovskite Solar Cells and Photodetectors

Low-bandgap (E_g~1.25 eV) mixed tin-lead (Sn-Pb) perovskites are promising candidates for efficient solar cells and self-powered photodetectors; however, they suffer from huge amounts of defects due to the unintentional p-type self-doping. In this work, the synergistic effects of maltol and phenyl-C61-butyric acid methyl ester (PCBM) were achieved to improve the performance of low-bandgap perovskite solar cells (PSCs) and unbiased perovskite photodetectors (PPDs) by passivating the defects and tuning charge transfer dynamics. Maltol eliminated the Sn-related traps in perovskite films through a strong metal chelating effect, whereas PCBM elevated the built-in electric potential and thus improved voltage through the spike energy alignment. Combining both advantages of maltol and PCBM, high-quality perovskite films were obtained, enabling low-bandgap PSCs with the best efficiency of 20.62%. Moreover, the optimized PSCs were further applied as self-powered PPDs in a visible light communication system with a response time of 0.736 μs, presenting a satisfactory audio transmission capability.

Vertical 1D/2D Heterojunction Architectures for Self-Powered Photodetection Application: GaN Nanorods Grown on Transition Metal Dichalcogenides

Van der Waals (vdW) heterojunctions based on two-dimensional (2D) transition metal dichalcogenide (TMD) materials have attracted the attention of researchers to conduct fundamental investigations on emerging physical phenomena and expanding diverse nano-optoelectronic devices. Herein, the quasi-van der Waals epitaxial (QvdWE) growth of vertically aligned one-dimensional (1D) GaN nanorod arrays (NRAs) on TMDs/Si substrates is reported, and their vdW heterojunctions in the applications of high-performance self-powered photodetection are demonstrated accordingly. Such 1D/2D hybrid systems fully combine the advantages of the strong light absorption of 1D GaN nanoarrays and the excellent electrical properties of 2D TMD materials, boosting the photogenerated current density, which demonstrates a light on/off ratio above 10⁵. The device exhibits a competitive photovoltaic photoresponsivity over 10 A W^-1 under a weak detectable light signal without any external bias, which is attributed to the efficient photogenerated charge separation under the strong built-in potential from the type-II band alignment of GaN NRAs/TMDs. This work presents a QvdWE route to prepare 1D/2D heterostructures for the fabrication of self-powered photodetectors, which shows promising potentials for practical applications of space communications, sensing networks, and environmental monitoring.

Dramatic Responsivity Enhancement Through Concentrated H2 SO4 Treatment on PEDOT:PSS/TiO2 Heterojunction Fibrous Photodetectors

In order to satisfy the growing requirements of wearable electronic devices, 1D fiber-shaped devices with outstanding sensitivity, flexibility, and stability are urgently needed. In this study, a novel inorganic-organic heterojunction fibrous photodetector (FPD) based on poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) and highly ordered TiO₂ nanotube array is fabricated, which endows a high responsivity, large external quantum efficiency, and fast response speed at 3 V bias. To further ameliorate its performance in the self-powered mode, a facile acid treatment is adopted and the assembled H-PEDOT:PSS/TiO₂ FPD demonstrates outstanding self-powered properties with ≈3000% responsivity enhancement (161 mA W^-1 at 0 V under 365 nm irradiation, photocurrent enhancement of ≈50 times) compared with the untreated device. It is found that the concentrated H₂ SO₄ post-treatment helps decrease the tube wall thickness of TiO₂ and partially removes the insulated PSS component in PEDOT:PSS, leading to enhanced conductivity and facilitated charge transportation, and thereby superb responsivity/photocurrent enhancement of self-powered H-PEDOT:PSS/TiO₂ FPD. This low-cost and high-performance self-powered FPD shows high potential for applications in wearable electronic devices.

A Self-Powered Photodetector Based on MAPbI3 Single-Crystal Film/n-Si Heterojunction with Broadband Response Enhanced by Pyro-Phototronic and Piezo-Phototronic Effects

Pyro-phototronic and piezo-phototronic effect have shown their important roles for high performance heterojunction-based photodetectors (PDs). Here, a coupling effect of pyro-phototronic and piezo-phototronic effect is utilized to fabricate a self-powered and broadband PD based on the MAPbI₃ single-crystal film/n-Si heterojunction. First, by using the pyro-phototronic effect derived from MAPbI₃ , the maximum photoresponsivity of the self-powered PD is 1.5 mA W^-1 for 780 nm illumination, which is enhanced by more than 20 times in consideration of the relative peak-to-peak output current. Light-induced temperature change in MAPbI₃ film will create pyro-charges distributed at heterojunction interface, resulting in a downward bending of the energy band, facilitating the transport of photon-generated electrons and holes, and generating spike-like output currents. Second, piezo-phototronic effect is further introduced by applying vertical pressures onto the PD. With a vertical pressure of 155 kPa, the responsivity can be improved by more than 120% compared to the condition with no pressure. The overall enhancement is due to the piezo-phototronic and pyro-phototronic coupling effects which utilize the polarization charges to modulate the band structure of heterojunction. These results provide a promising approach to develop high-performance self-powered and broadband perovskite-based PDs by coupling pyro-phototronic and piezo-phototronic effect.

Controllable, Self-Powered, and High-Performance Short-Wavelength Infrared Photodetector Driven by Coupled Flexoelectricity and Strain Effect

Mechanical deformation-induced strain gradients and coupled spontaneous electric polarization field in centrosymmetric materials, known as the flexoelectric effect, can generate ubiquitous mechanoelectrical functionalities, like the flexo-photovoltaic effect. Concurrently, nano/micrometer-scale inhomogeneous strain reengineers the electronic arrangements and in turn, could alter the fundamental limits of optoelectronic performance. Here, the flexoelectric effect-driven self-powered giant short-wavelength infrared (λ ≤ 1800 nm) photoresponse from centrosymmetric bulk silicon, indeed far beyond the fundamental bandgap (λ = 1100 nm) is demonstrated. Particularly, large on/off ratio (≈10⁵ ), extremely high sensitivity (2.5 × 10⁸ %), good responsivity of 96 mA W^-1 , decent specific detectivity of ≈1.54 × 10¹⁴ Jones, and a rapid response speed of ≈100 µs, even at nanoscale (<30 nm), are measured at λ = 1620 nm. The infrared response sensitivity is tuned in a wide range (up to 1.4 × 10⁸ %) by controlling the applied pointed force from 1 to 10 µN. These results confirm that emerging mechanoelectrical coupling not only sheds to achieve tunable optoelectronic performance beyond the fundamental limit, but also offers innovative numerous applications like mechanoptical switch, photovoltaic, sensors, and self-driving vehicles.

Highly Sensitive and Tunable Self-Powered UV Photodetectors Driven Jointly by p-n Junction and Ferroelectric Polarization

Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance because of the weak photovoltaic effect of FE depolarization field (E_dp) on the separation of photo-generated carriers. In this work, self-powered photodetectors based on both E_dp and built-in electric field at the p-n junction (E_p-n) were designed to obtain enhanced device performance. A NiO/Pb_0.95La_0.05Zr_0.54Ti_0.46O₃ (PLZT) heterojunction-based device is constructed to take advantage of energy level alignments that favor electron extraction. The device exhibits a tunable performance upon varying the polarization direction of PLZT. The NiO/PLZT heterojunction-based device with the PLZT layer in the poling down state shows a higher responsivity [R = (1.8 ± 0.12) × 10^-4 A/W] and detectivity [D* = (3.69 ± 0.2) × 10⁹ Jones], a faster response speed (τ_r = 0.34 ± 0.03 s, τ_d = 0.36 ± 0.02 s), and a lower dark current [I_dark = (1.3 ± 0.19) × 10^-12 A] under zero bias than the PLZT-based device because of the synergistic effects of E_dp and E_p-n. Moreover, under weak-light illumination (0.1 mW/cm²), it exhibits even higher R [(6.3 ± 1.2) × 10^-4 A/W] and D* [(1.29 ± 0.26) × 10¹⁰ Jones] values, which surpass those of most previously reported FE-based self-powered photodetectors. Our work emphasizes the role of the coupling effect between E_p-n and E_dp in the photovoltaic process of NiO/PLZT heterojunction-based devices and provides an effective way to promote the self-powered UV photodetector applications.

High-Response, Ultrafast-Speed, and Self-Powered Photodetection Achieved in InP@ZnS-MoS2 Phototransistors with Interdigitated Pt Electrodes

Various hybrid zero-dimensional/two-dimensional (0D/2D) systems have been developed to fabricate phototransistors with better performance compared to two-dimensional (2D) layered materials as well as broaden potential applications. Herein, we integrated environment-friendly InP@ZnS core-shell QDs with high efficiency of light absorption and light-emitting properties with bilayer MoS₂ for the realization of 0D/2D mixed-dimensional phototransistors. Interdigitated (IDT) electrodes with Pt-patterned arrays, acting as light collectors as well as plasmonic resonators, can further enhance light harvesting from the InP@ZnS-MoS₂ hybrid phototransistors, contributing to achieving a photoresponsivity as high as 1374 A·W^-1. Moreover, thanks to the asymmetric Pt/MoS₂ Schottky junction at the source/drain contact, a self-powered characteristic with an ultrafast speed of 21.5 μs was achieved, which is among the best performances for 2D layered material-based phototransistors. In terms of these features, we demonstrated the artificial synapse network with short-time plasticity based on the self-powered photodetection device. Our work reveals the great potential of 0D/2D hybrid phototransistors for high-response, ultrafast-speed, and self-powered photodetectors coupled with artificial neuromorphic function.

Self-Powered Perovskite/CdS Heterostructure Photodetectors

Methylammonium lead halide perovskites have gained a lot of attention because of their remarkable physical properties and potential for numerous (opto)electronic applications. Here, high-performance photodetectors based on CH₃NH₃PbI₃ (MAPbI₃)/CdS heterostructures are demonstrated. The resulting self-powered MAPbI₃/CdS photodetectors show excellent operating characteristics including a maximum detectivity of 2.3 × 10¹¹ Jones with a responsivity of 0.43 A/W measured at 730 nm. A temporal response time of less than 14 ms was achieved. The mechanisms of charge separation and transport at the interface of the MAPbI₃/CdS junction were investigated via conductive atomic force microscopy (AFM) and photoconductive AFM. Obtained results show that grain boundaries exhibit higher photocurrent than flat regions of the top perovskite layer, which indicates that excitons preferentially separate at the grain boundaries of the perovskite thin film, that is, at the edges of the MAPbI₃ crystals. The study of the photoelectric mechanism at the nanoscale suggests the device performance could potentially be fine-tuned through grain boundary engineering, which provides essential insights for the fabrication of the high-performance photodetector. The demonstrated self-powered photodetector is promising for numerous applications in low-energy consumption optoelectronic devices.

Chemical Vapor Deposition Method Grown All-Inorganic Perovskite Microcrystals for Self-Powered Photodetectors

Self-powered photodetectors (SPPDs) have attracted lots of attention due to their various advantages including no external power sources, high-sensitivity, fast response speed, and so on. This study reports the fabrication and characterization results of CsPbBr₃ microcrystals (MCs) grown by chemical vapor deposition (CVD) method, and the SPPDs have been fabricated on the basis of the CsPbBr₃ MCs layer with the sandwich structure of GaN/CsPbBr₃ MCs/ZnO. Such designed SPPD shows the detectivity ( D*) of 10¹⁴ Jones, on/off ratio of up to 10⁵, peak responsivity ( R) of 89.5 mA/W, and enhanced stability at the incident wavelength of 540 nm. The photodetector enables the fast photoresponse speed of 100 μs rise time and 140 μs decay time. The performances of the SPPD are comparable to the best ones ever reported for CsPbBr₃ based PDs but do not need external power supplies, which mainly benefit from the low trap density, long carrier diffusion of high quality CsPbBr₃MCs film, and the built-in electric fields in the sandwich structure of GaN/CsPbBr₃/ZnO layers.

Novel UV-Visible Photodetector in Photovoltaic Mode with Fast Response and Ultrahigh Photosensitivity Employing Se/TiO2 Nanotubes Heterojunction

A feasible strategy for hybrid photodetector by integrating an array of self-ordered TiO₂ nanotubes (NTs) and selenium is demonstrated to break the compromise between the responsivity and response speed. Novel heterojunction between the TiO₂ NTs and Se in combination with the surface trap states at TiO₂ help regulate the electron transport and facilitate the separation of photogenerated electron-hole pairs under photovoltaic mode (at zero bias), leading to a high responsivity of ≈100 mA W^-1 at 620 nm light illumination and the ultrashort rise/decay time (1.4/7.8 ms). The implanting of intrinsic p-type Se into TiO₂ NTs broadens the detection range to UV-visible (280-700 nm) with a large detectivity of over 10¹² Jones and a high linear dynamic range of over 80 dB. In addition, a maximum photocurrent of ≈10⁷ A is achieved at 450 nm light illumination and an ultrahigh photosensitivity (on/off ratio up to 10⁴ ) under zero bias upon UV and visible light illumination is readily achieved. The concept of employing novel heterojunction geometry holds great potential to pave a new way to realize high performance and energy-efficient optoelectronic devices for practical applications.

Scalable-Production, Self-Powered TiO2 Nanowell-Organic Hybrid UV Photodetectors with Tunable Performances

Hybrid inorganic-organic photoelectric devices draw considerable attention because of their unique features by combining the tunable functionality of organic molecules and the superior intrinsic carrier mobilities of inorganic semiconductors. An ordered thin layer of TiO₂ nanowells is formed in situ with shallow nanoconcave patterns without cracking with scalable production by a facile and economic strategy, and these layers are used as building blocks to construct hybrid UV photodetectors (PDs). Organic conducting polymers (polyaniline (PANI) with various morphologies) have been exploited as p-type materials, enabling tunable photodetection performances at zero bias. The thin layer of n-type TiO₂ nanowells is favorable for electron transport and light absorption with respect to their conventional nanotubular counterparts, while PANI acts as a hopping state or bridge to largely enhance the transition probability of the valence electrons in TiO₂ to its conduction band, resulting in an increase in photocurrent in a self-powered mode. In particular, the lowest polyaniline loading sample (TP1) exhibits the highest responsivity (3.6 mA·W^-1), largest on-off switching ratio (∼10³), excellent wavelength selectivity, fast response speed (3.8/30.7 ms), and good stability under 320 nm light illumination (0.56 mW·cm^-2) without an external energy supply. This work might be of great value in developing tunable UV photoresponse materials with respect to low cost and a large area for future energy-efficient optoelectronic devices.

Flexible Photodiodes Based on Nitride Core/Shell p-n Junction Nanowires

A flexible nitride p-n photodiode is demonstrated. The device consists of a composite nanowire/polymer membrane transferred onto a flexible substrate. The active element for light sensing is a vertical array of core/shell p-n junction nanowires containing InGaN/GaN quantum wells grown by MOVPE. Electron/hole generation and transport in core/shell nanowires are modeled within nonequilibrium Green function formalism showing a good agreement with experimental results. Fully flexible transparent contacts based on a silver nanowire network are used for device fabrication, which allows bending the detector to a few millimeter curvature radius without damage. The detector shows a photoresponse at wavelengths shorter than 430 nm with a peak responsivity of 0.096 A/W at 370 nm under zero bias. The operation speed for a 0.3 × 0.3 cm² detector patch was tested between 4 Hz and 2 kHz. The -3 dB cutoff was found to be ∼35 Hz, which is faster than the operation speed for typical photoconductive detectors and which is compatible with UV monitoring applications.