Influence of Sulfurization Time on Sb2S3 Synthesis Using a New Graphite Box Design

In recent years, antimony sulfide (Sb2S3) has been investigated as a photovoltaic absorber material due to its suitable absorber coefficient, direct band gap, extinction coefficient, earth-abundant, and environmentally friendly constituents. Therefore, this work proposes Sb2S3 film preparation by an effective two-step process using a new graphite box design and sulfur distribution, which has a high repeatability level and can be scalable. First, an Sb thin film was deposited using the RF-Sputtering technique, and after that, the samples were annealed with elemental sulfur into a graphite box, varying the sulfurization time from 20 to 50 min. The structural, optical, morphological, and chemical characteristics of the resulting thin films were analyzed. Results reveal the method's effectivity and the best properties were obtained for the sample sulfurized during 40 min. This Sb2S3 thin film presents an orthorhombic crystalline structure, elongated grains, a band gap of 1.69 eV, a crystallite size of 15.25 Å, and a nearly stoichiometric composition. In addition, the formation of a p-n junction was achieved by depositing silver back contact on the Glass/FTO/CdS/Sb2S3 structure. Therefore, the graphite box design has been demonstrated to be functional to obtain Sb2S3 by a two-step process.

Differential phase contrast (DPC) mapping electric fields: Optimising experimental conditions

DPC in Scanning Transmission Electron Microscopy (STEM) is a valuable method for mapping the electric fields in semiconductor materials. However, optimising the experimental conditions can be challenging. In this paper, we test and compare critical experimental parameters, including the convergence angle, camera length, acceleration voltage, sample configuration, and orientation using a four-quadrant segmented detector and a Si specimen containing layers of different As concentrations. The DPC measurements show a roughly linear correlation with the estimated electric fields, until the field gets close to the detection limitation, which is ∼0.5 mV/nm with a sample thickness of ∼145 nm. These results can help inform which technique to use for different user cases: When the electric field at a planar junction is above ∼0.5 mV/nm, DPC with a segmented detector is practical for electric field mapping. With a planar junction, the DPC signal-to-noise ratio can be increased by increasing the specimen thickness. However, for semiconductor devices with electric fields smaller than ∼0.5 mV/nm, or for devices containing curved junctions, DPC is unreliable and techniques with higher sensitivity will need to be explored, such as 4D STEM using a pixelated detector.

Impact of beam size and diffraction effects in the measurement of long-range electric fields in crystalline samples via 4DSTEM

Measuring long-range electric fields by 4-dimensional scanning transmission electron microscopy (4DSTEM) is on the verge to becoming an established method, though quantifying and understanding all underlying processes remains a challenge. To gain further insight into these processes, experimental studies employing the center-of-mass (COM) method of the model system of a GaAs p-n junction are carried out in which three ranges of the semi-convergence angle α are identified, with an intermediate one where measuring the built-in potential Vbi is not feasible. STEM multislice simulations including both atomic and nm-scale fields prove that this intermediate range begins once diffraction disks start overlapping with the undiffracted beam. The range ends when the diffraction disks' intensities become so low that they do not affect the measurement significantly anymore and when high-intensity diffractions overlap the center disk completely. From simulations without influence of atoms it is concluded that measuring Vbi has advantages over measuring the electric-field strength, as the potential difference does neither show a significant dependence on the beam size, nor on the specimen thickness.

Fabrication of a Novel Co/CoO@Fe2 V4 O13 Composite Catalyst as a Photoanode for Enhanced Photoelectrochemical Water Oxidation

Herein, the synthesis of a novel composite photocatalyst, Co/CoO@Fe2 V4 O13 , is reported by the deposition of CoO metal oxide nanoparticles on the surface of Fe2 V4 O13 bimetallic oxide. The synthesised photocatalyst exhibited a band gap of roughly 1.8 eV, rendering it responsive to the complete visible light spectrum of the sun, thereby enabling optimal absorption of solar radiation. The Co/CoO@Fe2 V4 O13 composites demonstrated an enhanced photoelectrochemical water oxidation capacity compared to pristine Fe2 V4 O13 when exposed to visible light. The enhanced performance is attributed primarily to the creation of a p-n junction at the interface of Fe2 V4 O13 and Co/CoO, as well as the Z-scheme charge transfer mechanism, which aids in the separation and transfer of photogenerated charge carriers. Light absorption by Co nanoparticles via plasmonic excitation and intra- and inter-band transitions in the composite structure is also likely, resulting in increased composite efficiency. Our findings indicate that Co/CoO@Fe2 V4 O13 composites show promising performance for solar water splitting applications and offer new perspectives for designing effective photocatalysts.

Au- or Ag-Decorated ZnO-Rod/rGO Nanocomposite with Enhanced Room-Temperature NO2-Sensing Performance

To improve the gas sensitivity of reduced oxide graphene (rGO)-based NO2 room-temperature sensors, different contents (0-3 wt%) of rGO, ZnO rods, and noble metal nanoparticles (Au or Ag NPs) were synthesized to construct ternary hybrids that combine the advantages of each component. The prepared ZnO rods had a diameter of around 200 nm and a length of about 2 μm. Au or Ag NPs with diameters of 20-30 nm were loaded on the ZnO-rod/rGO hybrid. It was found that rGO simply connects the monodispersed ZnO rods and does not change the morphology of ZnO rods. In addition, the rod-like ZnO prevents rGO stacking and makes nanocomposite-based ZnO/rGO achieve a porous structure, which facilitates the diffusion of gas molecules. The sensors' gas-sensing properties for NO2 were evaluated. The results reveal that Ag@ZnO rods-2% rGO and Au@ZnO rods-2% rGO perform better in low concentrations of NO2 gas, with greater response and shorter recovery time at the ambient temperature. The response and recovery times with 15 ppm NO2 were 132 s, 139 s and 108 s, 120 s, and the sensitivity values were 2.26 and 2.87, respectively. The synergistic impact of ZnO and Au (Ag) doping was proposed to explain the improved gas sensing. The p-n junction formed on the ZnO and rGO interface and the catalytic effects of Au (Ag) NPs are the main reasons for the enhanced sensitivity of Au (Ag)@ZnO rods-2% rGO.

Microwave hydrothermal preparation of reduced graphene oxide-induced p-AgO/n-MoO3 heterostructures for enhanced photocatalytic activity through S-scheme mechanism and its electronic performance

Through a powerful and modest closed system Microwave hydrothermal process, a methodological analysis is made in the rational synthesis of the reduced graphene oxide-induced p-AgO/n-MoO3 (RGAM) heterostructures. These have strong p-n junction heterostructures with considerable electron-hole recombination functioning as solar catalysts. The enhanced photocatalytic activity through the plasmonic step scheme (S-scheme mechanism) describes the effective charge recombination process. The energy band positions, bandgap, and work function are determined to understand the Fermi level shifts; this describes the S-scheme mechanism by UPS analysis which assessed an electron transfer between AgO and MoO3, yielding work function values of 6.34 eV and 6.62eV, respectively. This photocatalytic activity aids in dye removal by 94.22%, and heavy metals such as chromium (Cr) are eliminated by the surface action of sunlight on the produced material during solar irradiation. Electrochemical studies such as photocurrent response, cyclic voltammogram, and electrochemical impedance spectroscopy for RGAM heterostructures were also carried out. The study helps to broaden the search for and development of new hybrid carbon composites for electrochemical applications.

Road Map of Semiconductor Metal-Oxide-Based Sensors: A Review

Identifying disease biomarkers and detecting hazardous, explosive, flammable, and polluting gases and chemicals with extremely sensitive and selective sensor devices remains a challenging and time-consuming research challenge. Due to their exceptional characteristics, semiconducting metal oxides (SMOxs) have received a lot of attention in terms of the development of various types of sensors in recent years. The key performance indicators of SMOx-based sensors are their sensitivity, selectivity, recovery time, and steady response over time. SMOx-based sensors are discussed in this review based on their different properties. Surface properties of the functional material, such as its (nano)structure, morphology, and crystallinity, greatly influence sensor performance. A few examples of the complicated and poorly understood processes involved in SMOx sensing systems are adsorption and chemisorption, charge transfers, and oxygen migration. The future prospects of SMOx-based gas sensors, chemical sensors, and biological sensors are also discussed.

Optimized dopant imaging for GaN by a scanning electron microscopy

Two-dimensional dopant profiling is vital for the modeling, design, diagnosis, and performance improvement of semiconductor devices and related research and development. Scanning electron microscopy (SEM) has shown great potential for dopant profiling. In this study, the effects of secondary electron (SE) detectors and imaging parameters on the contrast imaging of multilayered p-n and p-i junction GaN specimens via SEM were studied to enable dopant profiling. The doping contrast of the image captured by the in-lens detector was superior to that of the image captured by the side-attached Everhart-Thornley detector at lower acceleration voltages (V_acc ) and small working distances (WD). Furthermore, the doping contrast levels of the in-lens detector-obtained image under different combinations of V_acc and WD were studied, and the underlying mechanism was explored according to local external fields and the refraction effect. The difference in the angular distributions of SEs emitted from different regions, the response of the three types of SEs to detectors, and the solid angles of detectors toward the specimen surface considerably influenced the results. This systematic study will enable the full exploitation of SEM for accurate dopant profiling, improve the analysis of the doping contrast mechanism, and further improve doping contrast for semiconductors. This article is protected by copyright. All rights reserved.

Nanoclay-Modulated Interfacial Chemical Bond and Internal Electric Field at the Co3 O4 /TiO2 p-n Junction for Efficient Charge Separation

To achieve a high separation efficiency of photogenerated carriers in semiconductors, constructing high-quality heterogeneous interfaces as charge flow highways is critical and challenging. This study successfully demonstrates an interfacial chemical bond and internal electric field (IEF) simultaneously modulated 0D/0D/1D-Co₃ O₄ /TiO₂ /sepiolite composite catalyst by exploiting sepiolite surface-interfacial interactions to adjust the Co²⁺ /Co³⁺ ratio at the Co₃ O₄ /TiO₂ heterointerface. In situ irradiation X-ray photoelectron spectroscopy and density functional theory (DFT) calculations reveal that the interfacial Co²⁺ OTi bond (compared to the Co³⁺ OTi bond) plays a major role as an atomic-level charge transport channel at the p-n junction. Co²⁺ /Co³⁺ ratio increase also enhances the IEF intensity. Therefore, the enhanced IEF cooperates with the interfacial Co²⁺ OTi bond to enhance the photoelectron separation and migration efficiency. A coupled photocatalysis-peroxymonosulfate activation system is used to evaluate the catalytic activity of Co₃ O₄ /TiO₂ /sepiolite. Furthermore, this work demonstrates how efficiently separated photoelectrons facilitate the synergy between photocatalysis and peroxymonosulfate activation to achieve deep pollutant degradation and reduce its ecotoxicity. This study presents a new strategy for constructing high-quality heterogeneous interfaces by consciously modulating interfacial chemical bonds and IEF, and the strategy is expected to extend to this class of spinel-structured semiconductors.

Synthesis and characterization of SSM@NiO/TiO2 p-n junction catalyst for bisphenol a degradation

Photocatalyst immobilization on support materials is essential for large-scale applications. Here, we describe growth of a p-n junction catalyst (NiO/TiO₂) on a stainless-steel mesh (SSM) support using a facile hydrothermal method. The morphological superiority of the composite over previously reported NiO/TiO₂ catalysts was probed using scanning and transmission electron microscopy. Flower petal-like NiO grew uniformly on SSM, which was evenly covered by TiO₂ nanoparticles. Theoretical and experimental X-ray diffraction patterns were compared to analyze the development of the composite during various stages of synthesis. The photocatalytic activity of a powdered catalyst and SSM@catalyst was compared by measuring bisphenol A (BPA) degradation. SSM@NiO/TiO₂ achieved the highest rate of BPA degradation, removing 96% of the BPA in 120 min. Scavenging experiments were used to investigate the charge separation and degradation mechanism. SSM@NiO/TiO₂ showed excellent reusability potential, achieving and sustaining 91% BPA removal after 10 rounds of cyclic degradation. Reusability performance, composite resilience, apparent quantum yields, and figures of merit suggest that SSM@NiO/TiO₂ has excellent utility for practical applications.

p-n Junction Based Direct-Current Triboelectric Nanogenerator by Conjunction of Tribovoltaic Effect and Photovoltaic Effect

Triboelectric nanogenerators (TENGs) have attracted much interest in recent years, due to its effectiveness and low cost for converting high-entropy mechanical energy into electric power. The traditional TENGs generate an alternating current, which requires a rectifier to provide a direct-current (DC) power supply. Herein, a dynamic p-n junction based direct-current triboelectric nanogenerator (DTENG) is demonstrated. When a p-Si wafer is sliding on a n-GaN wafer, carriers are generated at the interface and a DC current is produced along the direction of the built-in electric field, which is called the tribovoltatic effect. Simultaneously, an UV light is illuminated on the p-n junction to enhance the output. The results indicate that the current increases 13 times and the voltage increases 4 times under UV light (365 nm, 28 mW/cm²) irradiation. This work demonstrates the coupling between the tribovoltaic effect and the photovoltaic effect in DTENG semiconductors, promoting further development for energy harvesting in mechanical energy and photon energy.

A New Miniaturized Gas Sensor Based on Zener Diode Network Covered by Metal Oxide

The development of “portable, low cost and low consumption” gas microsensors is one of the strong needs for embedded portable devices in many fields such as public domain. In this paper, a new approach is presented on making, on the same chip, a network of head-to-tail facing PN junctions in order to miniaturize the sensor network and considerably reduce the required power for heating each cell independently. This paper is about recognizing a device that integrates both sensing and self-heating. This first study aims to evaluate the possibilities of this type of diode network for use as a gas sensor. The first part concerns the description of the technological process that is based on a doped polysilicon wafer in which a thin layer of metal oxide (a gallium-doped zinc oxide in our case) is deposited by RF sputtering. An electrical model will be proposed to explain the operation and advantage of this approach. We will show the two types of tests that have been carried out (static and dynamic) as well as the first encouraging results of these electrical characterizations under variable atmospheres.

All-Inorganic p-n Heterojunction Solar Cells by Solution Combustion Synthesis Using N-type FeMnO3 Perovskite Photoactive Layer

This study outlines the synthesis and physicochemical characteristics of a solution-processable iron manganite (FeMnO₃) nanoparticles via a chemical combustion method using tartaric acid as a fuel whilst demonstrating the performance of this material as a n-type photoactive layer in all-oxide solar cells. It is shown that the solution combustion synthesis (SCS) method enables the formation of pure crystal phase FeMnO₃ with controllable particle size. XRD pattern and morphology images from TEM confirm the purity of FeMnO₃ phase and the relatively small crystallite size (∼13 nm), firstly reported in the literature. Moreover, to assemble a network of connected FeMnO₃ nanoparticles, β-alanine was used as a capping agent and dimethylformamide (DMF) as a polar aprotic solvent for the colloidal dispersion of FeMnO₃ NPs. This procedure yields a ∼500 nm thick FeMnO₃ n-type photoactive layer. The proposed method is crucial to obtain functional solution processed NiO/FeMnO₃ heterojunction inorganic photovoltaics. Photovoltaic performance and solar cell device limitations of the NiO/FeMnO₃-based heterojunction solar cells are presented.

Visible light driven exotic p (CuO) - n (TiO2) heterojunction for the photodegradation of 4-chlorophenol and antibacterial activity

The treatment of industrial waste and harmful bacteria is an important topic due to the release of toxins from the industrial pollutants that damage the water resources. These harmful sources frighten the life of every organism which was later developed as the carcinogenic and mutagenic agents. Therefore, the current study focuses on the breakdown or degradation of 4-chlorophenol and the antibacterial activity against Escherichia coli (E. coli). As a well-known catalyst, pure titanium-di-oxide (TiO₂) had not shown the photocatalytic activity in the visible light region. Hence, band position of TiO₂ need to be shifted to bring out the absorption in the visible light region. For this purpose, the n-type TiO₂ nanocrystalline material's band gap got varied by adding different ratios of p-type CuO. The result had appeared in the formation of p (CuO) - n (TiO₂) junction synthesized from sol-gel followed by chemical precipitation methods. The optical band gap value was determined by Kubelka-Munk (K-M) plot through UV-Vis diffusive reflectance spectroscopy (DRS). Further, the comprehensive mechanism and the results of photocatalytic and antibacterial activities were discussed in detail. These investigations are made for tuning the TiO₂ catalyst towards improving or eliminating the existing various environmental damages.

Sb2Se3 film with grain size over 10 µm toward X-ray detection

Direct X-ray detectors are considered as competitive next-generation X-ray detectors because of their high spatial resolution, high sensitivity, and simple device configuration. However, their potential is largely limited by the imperfections of traditional materials, such as the low crystallization temperature of α-Se and the low atomic numbers of α-Si and α-Se. Here, we report the Sb₂Se₃ X-ray thin-film detector with a p-n junction structure, which exhibited a sensitivity of 106.3 µC/(Gy_air·cm²) and response time of < 2.5 ms. This decent performance and the various advantages of Sb₂Se₃, such as the average atomic number of 40.8 and μτ product (μ is the mobility, and τ is the carrier lifetime) of 1.29 × 10^-5 cm²/V, indicate its potential for application in X-ray detection.

Using photo-induced p-n junction interface effect of CoMn2O4/β-MnO2 oxidase mimetics for colorimetric determination of hydroquinone in seawater

Detection of pollutants in seawater faces a great challenge of strong interference, and the facile detection method is lacked. The CoMn₂O₄/β-MnO₂ p-n junction oxidase mimetics were successfully prepared for colorimetric detection of hydroquinone in seawater. The catalysis ability was enhanced significantly by the photo-induced p-n junction interface effect. It not only promoted the formation of H₂O₂ by suppressing the recombination of photon-generated carriers, but also provided the driving force for electron transport. The colorimetric detection of hydroquinone was achieved by fading and exhibited good adaptability in seawater. The obtained good recovery rate (97.23%-101.37%) in seawater makes it an inspiring method for practical application. The photo-induced p-n junction interface effect provides an opportunity for developing the application of colorimetric sensing in seawater detection.

CdTe X/γ-ray Detectors with Different Contact Materials

Different contact materials and optimization of techniques of their depositions expand the possibilities to obtain high performance room temperature CdTe-based X/γ-ray detectors. The heterostructures with ohmic (MoO_x) and Schottky (MoO_x, TiO_x, TiN, and In) contacts, created by DC reactive magnetron sputtering and vacuum thermal evaporation, as well as In/CdTe/Au diodes with a p-n junction, formed by laser-induced doping, have been developed and investigated. Depending on the surface pre-treatment of semi-insulating p-CdTe crystals, the deposition of a MoO_x film formed either ohmic or Schottky contacts. Based on the calculations and I-V characteristics of the Mo-MoO_x/p-CdTe/MoO_x-Mo, In/p-CdTe/MoO_x-Mo, Ti-TiO_x/p-CdTe/MoO_x-Mo, and Ti-TiN/p-CdTe/MoO_x-Mo Schottky-diode detectors, the current transport processes were described in the models of the carrier generation-recombination within the space-charge region (SCR) at low bias, and space-charge limited current incorporating the Poole-Frenkel effect at higher voltages, respectively. The energies of generation-recombination centers, density of trapping centers, and effective carrier lifetimes were determined. Nanosecond laser irradiation of the In electrode, pre-deposited on the p-CdTe crystals, resulted in extending the voltage range, corresponding to the carrier generation-recombination in the SCR in the I-V characteristics of the In/CdTe/Au diodes. Such In/CdTe/Au p-n junction diode detectors demonstrated high energy resolutions (7%@59.5 keV, 4%@122 keV, and 1.6%@662 keV).

Interface Structures and Electronic States of Epitaxial Tetraazanaphthacene on Single-Crystal Pentacene

The structural and electronic properties of interfaces composed of donor and acceptor molecules play important roles in the development of organic opto-electronic devices. Epitaxial growth of organic semiconductor molecules offers a possibility to control the interfacial structures and to explore precise properties at the intermolecular contacts. 5,6,11,12-tetraazanaphthacene (TANC) is an acceptor molecule with a molecular structure similar to that of pentacene, a representative donor material, and thus, good compatibility with pentacene is expected. In this study, the physicochemical properties of the molecular interface between TANC and pentacene single crystal (PnSC) substrates were analyzed by atomic force microscopy, grazing-incidence X-ray diffraction (GIXD), and photoelectron spectroscopy. GIXD revealed that TANC molecules assemble into epitaxial overlayers of the (010) oriented crystallites by aligning an axis where the side edges of the molecules face each other along the [1¯10] direction of the PnSC. No apparent interface dipole was found, and the energy level offset between the highest occupied molecular orbitals of TANC and the PnSC was determined to be 1.75 eV, which led to a charge transfer gap width of 0.7 eV at the interface.

Near-Broken-Gap Alignment between FeWO4 and Fe2WO6 for Ohmic Direct p-n Junction Thermoelectrics

We report a near-broken-gap alignment between p-type FeWO₄ and n-type Fe₂WO₆, a model pair for the realization of Ohmic direct junction thermoelectrics. Both undoped materials have a large Seebeck coefficient and high electrical conductivity at elevated temperatures, due to inherent electronic defects. A band-alignment diagram is proposed based on X-ray photoelectron and ultraviolet-visible light reflectance spectroscopy. Experimentally acquired nonrectifying I-V characteristics and the constructed band-alignment diagram support the proposed formation of a near-broken-gap junction. We have additionally performed computational modeling based on density functional theory (DFT) on bulk models of the individual compounds to rationalize the experimental band-alignment diagram and to provide deeper insight into the relevant band characteristics. The DFT calculations confirm an Fe-3d character of the involved band edges, which we suggest is a decisive feature for the unusual band overlap.

p-CuInS2 /n-Polymer Semiconductor Heterojunction for Photoelectrochemical Hydrogen Evolution

An inorganic p-type CuInS₂ semiconductor was combined with the semiconducting polymer of PNDI3OT-Se1 and PNDI3OT-Se2 with different HOMO/LUMO levels for photoelectrochemical hydrogen production. Charge transfer behaviors at polymer/CuInS₂ junctions were investigated by electrochemical impedance spectroscopy. The heterojunction of p-CuInS₂ and n-type polymer (both PNDI3OT-Se1 and Se2) successfully made p-n junctions and showed improved charge transfer. However, we found that higher HOMO levels of polymer than valence band maximum (VBM) of CuInS₂ spurred charge recombination at interfaces. As a result, CuInS₂ /PNDI3OT-Se1/TiO₂ /Pt, which has suitable energy levels matched between PNDI3OT-Se1 and CuInS₂ , shows photocurrent (-15.67 mA cm^-2 ) improved concretely when compared to a CuInS₂ /TiO₂ /Pt photoelectrode (-7.11 mA cm^-2 ) at 0.0 V vs. RHE applied potential. Additionally, the photoelectrochemical stability of CuInS₂ /PNDI3OT-Se1/TiO₂ /Pt photoelectrode was also investigated.

Highly Sensitive and Tunable Self-Powered UV Photodetectors Driven Jointly by p-n Junction and Ferroelectric Polarization

Ferroelectric (FE) materials are thought to be promising materials for self-powered ultraviolet (UV) photodetector applications because of their photovoltaic effects. However, FE-based photodetectors exhibited poor performance because of the weak photovoltaic effect of FE depolarization field (E_dp) on the separation of photo-generated carriers. In this work, self-powered photodetectors based on both E_dp and built-in electric field at the p-n junction (E_p-n) were designed to obtain enhanced device performance. A NiO/Pb_0.95La_0.05Zr_0.54Ti_0.46O₃ (PLZT) heterojunction-based device is constructed to take advantage of energy level alignments that favor electron extraction. The device exhibits a tunable performance upon varying the polarization direction of PLZT. The NiO/PLZT heterojunction-based device with the PLZT layer in the poling down state shows a higher responsivity [R = (1.8 ± 0.12) × 10^-4 A/W] and detectivity [D* = (3.69 ± 0.2) × 10⁹ Jones], a faster response speed (τ_r = 0.34 ± 0.03 s, τ_d = 0.36 ± 0.02 s), and a lower dark current [I_dark = (1.3 ± 0.19) × 10^-12 A] under zero bias than the PLZT-based device because of the synergistic effects of E_dp and E_p-n. Moreover, under weak-light illumination (0.1 mW/cm²), it exhibits even higher R [(6.3 ± 1.2) × 10^-4 A/W] and D* [(1.29 ± 0.26) × 10¹⁰ Jones] values, which surpass those of most previously reported FE-based self-powered photodetectors. Our work emphasizes the role of the coupling effect between E_p-n and E_dp in the photovoltaic process of NiO/PLZT heterojunction-based devices and provides an effective way to promote the self-powered UV photodetector applications.

Ag2 S-CdS p-n Nanojunction-Enhanced Photocatalytic Oxidation of Alcohols to Aldehydes

Selective oxidation of alcohols to aldehydes under mild conditions is important for the synthesis of high-value-added organic intermediates but still very challenging. For most of the thermal and photocatalytic systems, noble metal catalysts or harsh reaction conditions are required. Herein, the synthesis and use of Ag₂ S-CdS p-n nanojunctions as an efficient photocatalyst for selective oxidation of a series of aromatic alcohols to their corresponding aldehydes is reported. High quantum efficiencies (59.6% and 36.9% under 380 and 420 nm, respectively) are achieved in air atmosphere at room temperature. Photoluminescence and photo-electrochemical tests show that the excellent performance is mainly due to the p-n junction-enhanced charge separation and transfer for the activation of both O₂ (in air) and substrates. This study demonstrates the potential of p-n junction in photocatalytic synthesis under mild conditions.

Device architectures for low voltage and ultrafast graphene integrated phase modulators

The atomic layer thin geometry and semi-metallic band diagram of graphene can be utilized for significantly improving the performance matrix of integrated photonic devices. Its semiconductor-like behavior of Fermi-level tunability allows graphene to serve as an active layer for electro-optic modulation. As a low loss metal layer, graphene can be placed much closer to active layer for low voltage operation. In this work, we investigate hybrid device architectures utilizing semiconductor and metallic properties of the graphene for ultrafast and energy efficient electro-optic phase modulators on semiconductor and dielectric platforms. (1) Directly contacted graphene-silicon heterojunctions. Without oxide layer, the carrier density of graphene can be modulated by the directly contact to silicon layer, while silicon intrinsic region stays mostly depleted. With doped silicon as electrodes, carrier can be quickly injected and depleted from the active region in graphene. The ultrafast carrier transit time and small RC constant promise ultrafast modulation speed (3dB bandwidth of 67 GHz) with an estimated V_π·L of 1.19 V·mm. (2) Graphene integrated lithium niobite modulator. As a transparent electrode, graphene can be placed close to integrated lithium niobate waveguide for improving coupling coefficient between optical mode profile and electric field with minimal additional loss (4.6 dB/cm). Numerical simulation indicates 2.5× improvement of electro-optic field overlap coefficient, with estimated V _π of 0.2 V.

Homogeneous 2D MoTe2 CMOS Inverters and p-n Junctions Formed by Laser-Irradiation-Induced p-Type Doping

Among all typical transition-metal dichalcogenides (TMDs), the bandgap of α-MoTe₂ is smallest and is close to that of conventional 3D Si. The properties of α-MoTe₂ make it a favorable candidate for future electronic devices. Even though there are a few reports regarding fabrication of complementary metal-oxide-semiconductor (CMOS) inverters or p-n junction by controlling the charge-carrier polarity of TMDs, the fabrication process is complicated. Here, a straightforward selective doping technique is demonstrated to fabricate a 2D p-n junction diode and CMOS inverter on a single α-MoTe₂ nanoflake. The n-doped channel of a single α-MoTe₂ nanoflake is selectively converted to a p-doped region via laser-irradiation-induced MoO_x doping. The homogeneous 2D MoTe₂ CMOS inverter has a high DC voltage gain of 28, desirable noise margin (NM_H = 0.52 V_DD , NM_L = 0.40 V_DD ), and an AC gain of 4 at 10 kHz. The results show that the doping technique by laser scan can be potentially used for future larger-scale MoTe₂ CMOS circuits.

A DVD-MoS2/Ag2S/Ag Nanocomposite Thiol-Conjugated with Porphyrins for an Enhanced Light-Mediated Hydrogen Evolution Reaction

We have recently demonstrated in a previous work an appreciable photoelectrocatalytic (PEC) behavior towards hydrogen evolution reaction (HER) of a MoS₂/Ag₂S/Ag nanocomposite electrochemically deposited on a commercial writable Digital Versatile Disc (DVD), consisting therefore on an interesting strategy to convert a common waster product in an added-value material. Herein, we present the conjugation of this MoS₂/Ag₂S/Ag-DVD nanocomposite with thiol-terminated tetraphenylporphyrins, taking advantage of the grafting of thiol groups through covalent S-S bridges, for integrating the well-known porphyrins photoactivity into the nanocomposite. Moreover, we employ two thiol-terminated porphyrins with different hydrophilicity, demonstrating that they either suppress or improve the PEC-HER performance of the overall hybrid, as a function of the molecule polarity, sustaining the concept of a local proton relay. Actually, the active polar porphyrin-MoS₂/Ag₂S/Ag-DVD hybrid material presented, when illuminated, a better HER performance, compared to the pristine nanocomposite, since the porphyrin may inject photoelectrons in the conduction band of the semiconductors at the formed heterojunction, presenting also a stable operational behavior during overnight chopped light chronoamperometric measurement, thanks to the robust bond created.

Enhancing Water-Splitting Efficiency Using a Zn/Sn-Doped PN Photoelectrode of Pseudocubic α-Fe2O3 Nanoparticles

α-Phase hematite photoelectrodes can split water. This material is nontoxic, inexpensive, and chemically stable; its low energy gap of 2.3 eV absorbs light with wavelengths lower than 550 nm, accounting for approximately 30% of solar energy. Previously, we reported polyhedral pseudocubic α-Fe₂O₃ nanocrystals using a facile hydrothermal route to increase spatial charge separation, enhancing the photocurrent of photocatalytic activity in the water-splitting process. Here, we propose a p-n junction structure in the photoanode of pseudocubic α-Fe₂O₃ to improve short carrier diffusion length, which limits its photocatalytic efficiency. We dope Zn on top of an Fe₂O₃ photoanode to form a layer of p-type semiconductor material; Sn is doped from the FTO substrate to form a layer of n-type semiconductor material. The p-n junction, n-type Fe₂O₃:Sn and p-type Fe₂O₃:Zn, increase light absorption and charge separation caused by the internal electric field in the p-n junction.

Ion-Locking in Solid Polymer Electrolytes for Reconfigurable Gateless Lateral Graphene p-n Junctions

A gateless lateral p-n junction with reconfigurability is demonstrated on graphene by ion-locking using solid polymer electrolytes. Ions in the electrolytes are used to configure electric-double-layers (EDLs) that induce p- and n-type regions in graphene. These EDLs are locked in place by two different electrolytes with distinct mechanisms: (1) a polyethylene oxide (PEO)-based electrolyte, PEO:CsClO₄, is locked by thermal quenching (i.e., operating temperature < T_g (glass transition temperature)), and (2) a custom-synthesized, doubly-polymerizable ionic liquid (DPIL) is locked by thermally triggered polymerization that enables room temperature operation. Both approaches are gateless because only the source/drain terminals are required to create the junction, and both show two current minima in the backgated transfer measurements, which is a signature of a graphene p-n junction. The PEO:CsClO₄ gated p-n junction is reconfigured to n-p by resetting the device at room temperature, reprogramming, and cooling to T < T_g. These results show an alternate approach to locking EDLs on 2D devices and suggest a path forward to reconfigurable, gateless lateral p-n junctions with potential applications in polymorphic logic circuits.

Fabrication of the Ni/ZnO/BiOI foam for the improved electrochemical biosensing performance to glucose

The Ni foam decorated with ZnO/BiOI core-shell p-n junction nanorods was prepared and employed as an enzyme loading matrix to detect glucose. The detection potential was decreased significantly (0.3 V) and the sensitivity was enhanced largely (115.2 μA mM^-1 cm^-2). The metal-semiconductor foam can afford the porous surface for loading enzymes and achieving the multiple catalysis. More important, the built-in electric field and electron well in the p-n junction interface provide the driving force for electron transport. It was an effective strategy to enhance the biosensing performance by the rational design of p-n junction.

Chemically Tuned p- and n-Type WSe2 Monolayers with High Carrier Mobility for Advanced Electronics

Monolayers of transition metal dichalcogenides (TMDCs) have attracted a great interest for post-silicon electronics and photonics due to their high carrier mobility, tunable bandgap, and atom-thick 2D structure. With the analogy to conventional silicon electronics, establishing a method to convert TMDC to p- and n-type semiconductors is essential for various device applications, such as complementary metal-oxide-semiconductor (CMOS) circuits and photovoltaics. Here, a successful control of the electrical polarity of monolayer WSe₂ is demonstrated by chemical doping. Two different molecules, 4-nitrobenzenediazonium tetrafluoroborate and diethylenetriamine, are utilized to convert ambipolar WSe₂ field-effect transistors (FETs) to p- and n-type, respectively. Moreover, the chemically doped WSe₂ show increased effective carrier mobilities of 82 and 25 cm² V^-1 s^-1 for holes and electrons, respectively, which are much higher than those of the pristine WSe₂ . The doping effects are studied by photoluminescence, Raman, X-ray photoelectron spectroscopy, and density functional theory. Chemically tuned WSe₂ FETs are integrated into CMOS inverters, exhibiting extremely low power consumption (≈0.17 nW). Furthermore, a p-n junction within single WSe₂ grain is realized via spatially controlled chemical doping. The chemical doping method for controlling the transport properties of WSe₂ will contribute to the development of TMDC-based advanced electronics.

Heterostructured NiO/ZnO Nanorod Arrays with Significantly Enhanced H2S Sensing Performance

H2S gas sensors were fabricated using p-n heterojunctions of NiO/ZnO, in which the ZnO nanorod arrays were wrapped with NiO nanosheets via a hydrothermal synthesis method. When the H2S gas molecules were adsorbed and then oxidized on the ZnO surfaces, the free electrons were released. The increase in the electron concentration on the ZnO boosts the transport speed of the electrons on both sides of the NiO/ZnO p-n junction, which significantly improved the sensing performance and selectivity for H2S detection, if compared with sensors using the pure ZnO nanorod arrays. The response to 20 ppm of H2S was 21.3 at 160 °C for the heterostructured NiO/ZnO sensor, and the limit of detection was 0.1 ppm. We found that when the sensor was exposed to H2S at an operating temperature below 160 °C, the resistance of the sensor significantly decreased, indicating its n-type semiconductor nature, whereas when the operating temperature was above 160 °C, the resistance significantly increased, indicating its p-type semiconductor nature. The sensing mechanism of the NiO/ZnO heterostructured H2S gas sensor was discussed in detail.

Realization of Diverse Waveform Converters from a Single Nanoscale Lateral p-n Junction Cu2S-CdS Heterostructure

A differentiator is an electronic component used to accomplish mathematical operations of calculus functions of differentiation for shaping different waveforms. Differentiators are used in numerous areas of electronics, including electronic analog computers, wave-shaping circuits, and frequency modulators. Conventional differentiators are fabricated using active operational amplifiers or using passive resistor-capacitor combinations. Here, we report that a single Cu₂S-CdS heterostructure acts as a differentiator for performing numerical functions of input waveform conversion into different shapes. When a rectangular wave signal is applied through the tip of a conductive atomic force microscope, a spikelike wave signal is obtained from the Cu₂S-CdS heterostructure. The Cu₂S-CdS differentiator is able to convert a sine wave signal into a cosine wave signal and a triangular wave signal into a square wave signal similar to the classical differentiators. The finding of a nanoscale differentiator at extremely small length scales may have profound applications in different domains of electronics.

Efficient Self-Driven Photodetectors Featuring a Mixed-Dimensional van der Waals Heterojunction Formed from a CdS Nanowire and a MoTe2 Flake

Heterojunctions formed from low-dimensional materials can result in photovoltaic and photodetection devices displaying exceptional physical properties and excellent performance. Herein, a mixed-dimensional van der Waals (vdW) heterojunction comprising a 1D n-type Ga-doped CdS nanowire and a 2D p-type MoTe₂ flake is demonstrated; the corresponding photovoltaic device exhibits an outstanding conversion efficiency of 15.01% under illumination with white light at 650 µW cm^-2 . A potential difference of 80 meV measured, using Kelvin probe force microscopy, at the CdS-MoTe₂ interface confirms the separation and accumulation of photoexcited carriers upon illumination. Moreover, the photodetection characteristics of the vdW heterojunction device at zero bias reveal a rapid response time (<50 ms) and a photoresponsivity that are linearly proportional to the power density of the light. Interestingly, the response of the vdW heterojunction device is negligible when illuminated at 580 nm; this exceptional behavior is presumably due to the rapid rate of recombination of the photoexcited carriers of MoTe₂ . Such mixed-dimensional vdW heterojunctions appear to be novel design elements for efficient photovoltaic and self-driven photodetection devices.

Phase-transition-induced p-n junction in single halide perovskite nanowire

Semiconductor p-n junctions are fundamental building blocks for modern optical and electronic devices. The p- and n-type regions are typically created by chemical doping process. Here we show that in the new class of halide perovskite semiconductors, the p-n junctions can be readily induced through a localized thermal-driven phase transition. We demonstrate this p-n junction formation in a single-crystalline halide perovskite CsSnI₃ nanowire (NW). This material undergoes a phase transition from a double-chain yellow (Y) phase to an orthorhombic black (B) phase. The formation energies of the cation and anion vacancies in these two phases are significantly different, which leads to n- and p- type electrical characteristics for Y and B phases, respectively. Interface formation between these two phases and directional interface propagation within a single NW are directly observed under cathodoluminescence (CL) microscopy. Current rectification is demonstrated for the p-n junction formed with this localized thermal-driven phase transition.

Dispersed Ag2O/Ag on CNT-Graphene Composite: An Implication for Magnificent Photoreduction and Energy Storage Applications

A simple hydrothermal route assisted by a triblock copolymer was used to synthesize Ag2O/Ag nanoparticles on a robotic support consists of functionalized MWCNTs and graphene composite (Ag2O/Ag/CNT-graphene). The composites together with the individual analog of Ag/CNT and Ag/graphene were characterized by means of XRD, TEM-SAED, N2 sorptiometry, Raman, FTIR, UV-Vis, and photoluminescence spectroscopy. These nanomaterials were then tested for the catalytic reduction of 4-nitrophenol (4-NP) to the technologically beneficial 4-aminophenol (4-AP). The Ag2O@Ag@CNT-graphene composite calcined at 400°C has shown fascinating reduction performances for 4-NP either in the dark (k = 0.014 s-1) or under visible light illumination (k = 0.039 s-1) in the presence of 5 mM NaBH4 compared to Ag/CNT (0.0112 s-1) and Ag/graphene (0.010 s-1) catalysts. This was chiefly because Ag2O@Ag@CNT-graphene comprises the highest pore volume (0.49 cm3/g) and involves three types of pores in the margin from 1.8 to 4.0 nm in front of only one modal type of pores for the rest of the catalysts and thus maximizes the adsorptive capacity of the reactants (4-NP and NaBH4). Moreover, the former composite exhibits the highest concentration of the Ag2O component as established by numerous techniques in addition to the cyclic voltammetry, proposing it's facile reaction with 4-NP along with the simultaneous transfer of surface hydrogen and electrons from NaBH4 ions to produce 4-AP. The promotion of the p-n junction evaluated using the Mott-schottky equation on Ag2O@Ag@CNT-graphene assisted by charges separation and surface plasmon resonance bands of Ag and Ag2O are found to be advantageous for 4-NP reduction. The latter composite delivers a specific capacitance of 355 F g-1 at 1.0 A g-1 exceeding those of Ag/CNT (230 F g-1) and Ag/graphene (185 F g-1). The EIS study establishes the high electronic conductivity of the metallic Ag and Ag2O moieties, low internal resistance of CNT-graphene as well as the marked ionic transfer facilitated by the composite porous nature.

SEM observation and analysis of InGaN/GaN multiple quantum well structure using obliquely polished sample

The InGaN/GaN multiple quantum well structures on sapphire substrates were observed by scanning electron microscope (SEM) using obliquely polished samples. From the contrast change across the p-n junction, piezoelectric fields were deduced. The direction of the piezoelectric field was consistent with the theoretical prediction, but the strength was smaller. Strain-stress calculation showed that strain relief along the surface is not significant; therefore, it is not responsible for the smaller value of the obtained field strength. As one cause, carrier distribution in the wells under the steady-state condition was pointed out. Potential profile along the surface was different for the samples polished from the surface and from the substrate. This was confirmed by the SEM contrast profile.

Sensitive, Selective, and Fast Detection of ppb-Level H2S Gas Boosted by ZnO-CuO Mesocrystal

ZnO-CuO mesocrystal was prepared via topotactic transformation using one-step direct annealing of aqueous precursor solution and assembled into a H2S sensor. The ZnO-CuO mesocrystal-based sensor possesses good linearity and high sensitivity in the low-concentration range (10-200 ppb). Compared to pure CuO, the as-prepared ZnO-CuO mesocrystal sensor exhibited superior H2S sensing performance with a response ranging from 8.6 to 152 % towards H2S concentrations from 10 ppb to 10 ppm when applied at the optimized working temperature of 125 °C. The sensor showed excellent repeatability and good selectivity towards H2S gas even at a concentration four orders of magnitude lower than the interfering gases, such as H2, CO2, CO, NO2, acetone, and NH3. The improved sensitivity could be attributed partially to the effective diffusion of analyte gas through the mesocrystal surface and the abundant accessible active sites. Moreover, the nanoscale p-n junctions within the mesocrystal, which could effectively manipulate the local charge carrier concentration, are also beneficial to boost the sensing performance.

Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride

We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.

Wavelength-selective dual p- and n-type carrier transport of an organic/graphene/inorganic heterostructure

A novel organic/graphene/inorganic -heterostructure, consisting of a graphene layer encapsulated by n- and p-type photoactive materials with complementary absorptions, enables the control of dual n- and p-typed transport behaviors of a graphene transistor under selective UV or visible light illumination. A graphene-based p-n junction created by spatially patterned wavelength-selective illumination using the organic/graphene/inorganic heterostructure is also demonstrated.

Epitaxial growth of asymmetrically-doped bilayer graphene for photocurrent generation

An asymmetrically doped bilayer graphene is grown by modulation-doped chemical vapor deposition, which consists of one intrinsic layer and one nitrogen-doped layer according to AB stacking. The asymmetrically doped bilayer crystalline profile is found to extend the identical registry as adjacent pristine bilayer region, thus forming single-crystalline bilayer graphene p-n junctions. Efficient photocurrent with responsivity as high as 0.2 mA/W is generated at the bilayer p-n junctions via a hot carrier-assisted mechanism.

Template method for fabricating interdigitate p-n heterojunction for organic solar cell

Anodic aluminum oxide (AAO) templates are used to fabricate arrays of poly(3-hexylthiophene) (P3HT) pillars. This technique makes it possible to control the dimensions of the pillars, namely their diameters, intervals, and heights, on a tens-of-nanometer scale. These features are essential for enhancing carrier processes such as carrier generation, exciton diffusion, and carrier dissociation and transport. An interdigitated p-n junction between P3HT pillars and fullerene (C60) exhibits a photovoltaic effect. Although the device properties are still preliminary, the experimental results indicate that an AAO template is an effective tool with which to develop organic solar cells because highly regulated nanostructures can be produced on large areas exceeding 100 mm2.

Two-stage model of nanocone formation on a surface of elementary semiconductors by laser radiation

In this work, we study the mechanism of nanocone formation on a surface of elementary semiconductors by Nd:YAG laser radiation. Our previous investigations of SiGe and CdZnTe solid solutions have shown that nanocone formation mechanism is characterized by two stages. The first stage is characterized by formation of heterostructure, for example, Ge/Si heterostructure from SiGe solid solutions, and the second stage is characterized by formation of nanocones by mechanical plastic deformation of the compressed Ge layer on Si due to mismatch of Si and Ge crystalline lattices. The mechanism of nanocone formation for elementary semiconductors is not clear until now. Therefore, the main goal of our investigations is to study the stages of nanocone formation in elementary semiconductors. A new mechanism of p-n junction formation by laser radiation in the elementary semiconductor as a first stage of nanocone formation is proposed. We explain this effect by the following way: p-n junction is formed by generation and redistribution of intrinsic point defects in temperature gradient field - the thermogradient effect, which is caused by strongly absorbed laser radiation. According to the thermogradient effect, interstitial atoms drift towards the irradiated surface, but vacancies drift to the opposite direction - in the bulk of semiconductor. Since interstitials in Ge crystal are of n-type and vacancies are known to be of p-type, a n-p junction is formed. The mechanism is confirmed by the appearance of diode-like current-voltage characteristics after i-Ge irradiation crystal by laser radiation. The mechanism in Si is confirmed by conductivity type inversion and increased microhardness of Si crystal. The second stage of nanocone formation is laser heating up of top layer enriched by interstitial atoms with its further plastic deformation due to compressive stress caused by interstitials in the top layer and vacancies in the buried layer.

ZnO-based ultraviolet photodetectors

Ultraviolet (UV) photodetection has drawn a great deal of attention in recent years due to a wide range of civil and military applications. Because of its wide band gap, low cost, strong radiation hardness and high chemical stability, ZnO are regarded as one of the most promising candidates for UV photodetectors. Additionally, doping in ZnO with Mg elements can adjust the bandgap largely and make it feasible to prepare UV photodetectors with different cut-off wavelengths. ZnO-based photoconductors, Schottky photodiodes, metal-semiconductor-metal photodiodes and p-n junction photodetectors have been developed. In this work, it mainly focuses on the ZnO and ZnMgO films photodetectors. We analyze the performance of ZnO-based photodetectors, discussing recent achievements, and comparing the characteristics of the various photodetector structures developed to date.