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Zhong J, Yang M, Wang J, Li Y, Liu C, Mu D, Liu Y, Cheng N, Shi Z, Yang L, Zhuang J, Du Y, Hao W. Observation of Anomalous Planar Hall Effect Induced by One-Dimensional Weak Antilocalization. ACS Nano 2024; 18:4343-4351. [PMID: 38277336 DOI: 10.1021/acsnano.3c10120] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/28/2024]
Abstract
The confinement of electrons in one-dimensional (1D) space highlights the prominence of the role of electron interactions or correlations, leading to a variety of fascinating physical phenomena. The quasi-1D electron states can exhibit a unique spin texture under spin-orbit interaction (SOI) and thus could generate a robust spin current by forbidden electron backscattering. Direct detection of such 1D spin or SOI information, however, is challenging due to complicated techniques. Here, we identify an anomalous planar Hall effect (APHE) in the magnetotransport of quasi-1D van der Waals (vdW) topological materials as exemplified by Bi4Br4, which arises from the quantum interference correction of 1D weak antilocalization (WAL) to the ordinary planar Hall effect and demonstrates a deviation from the usual sine and cosine curves. The occurrence of 1D WAL is correlated to the line-shape Fermi surface and persistent spin texture of (100) topological surface states of Bi4Br4, as revealed by both our angle-resolved photoemission spectroscopy and first-principles calculations. By generalizing the observation of APHE to other non-vdW bulk materials, this work provides a possible characteristic of magnetotransport for identifying the spin/SOI information and quantum interference behavior of 1D states in 3D topological material.
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Affiliation(s)
- Jingyuan Zhong
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Ming Yang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Jianfeng Wang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Yaqi Li
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
| | - Chen Liu
- Beijing Synchrotron Radiation Facility, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100049, China
| | - Dan Mu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Yundan Liu
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, and School of Physics and Optoelectronics, Xiangtan University, Hunan 411105, China
| | - Ningyan Cheng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Zhixiang Shi
- School of Physics and Key Laboratory of the Ministry of Education, Southeast University, Nanjing 211189, People's Republic of China
| | - Lexian Yang
- State Key Laboratory of Low Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Jincheng Zhuang
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Yi Du
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
| | - Weichang Hao
- School of Physics, Beihang University, Haidian District, Beijing 100191, China
- Centre of Quantum and Matter Sciences, International Research Institute for Multidisciplinary Science, Beihang University, Beijing 100191, China
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2
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Ali H, Serra L. Electrostatic Tuning of Bilayer Graphene Edge Modes. Nanomaterials (Basel) 2023; 13:2102. [PMID: 37513113 PMCID: PMC10383601 DOI: 10.3390/nano13142102] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Revised: 07/04/2023] [Accepted: 07/14/2023] [Indexed: 07/30/2023]
Abstract
We study the effect of a local potential shift induced by a side electrode on the edge modes at the boundary between gapped and ungapped bilayer graphene. A potential shift close to the gapped-ungapped boundary causes the emergence of unprotected edge modes, propagating in both directions along the boundary. These counterpropagating edge modes allow edge backscattering, as opposed to the case of valley-momentum-locked edge modes. We then calculate the conductance of a bilayer graphene wire in presence of finger-gate electrodes, finding strong asymmetries with energy inversion and deviations from conductance quantization that can be understood with the gate-induced unprotected edge modes.
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Affiliation(s)
- Hira Ali
- Institute for Cross-Disciplinary Physics and Complex Systems IFISC (CSIC-UIB), E-07122 Palma, Spain
| | - Llorenç Serra
- Institute for Cross-Disciplinary Physics and Complex Systems IFISC (CSIC-UIB), E-07122 Palma, Spain
- Physics Department, University of the Balearic Islands, E-07122 Palma, Spain
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3
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Chen F, Zhao Y, Saxena A, Zhao C, Niu M, Aluru NR, Feng J. Inducing Electric Current in Graphene Using Ionic Flow. Nano Lett 2023; 23:4464-4470. [PMID: 37154839 DOI: 10.1021/acs.nanolett.3c00821] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
Classical nanofluidic frameworks account for the confined fluid and ion transport under an electrostatic field at the solid-liquid interface, but the electronic property of the solid is often overlooked. Harvesting the interaction of the nanofluidic transport with the electron transport in solid requires a route effectively coupling ion and electron dynamics. Here we report a nanofluidic analogy of Coulomb drag for exploring the dynamic ion-electron interactions at the liquid-graphene interface. An induced electric current in graphene by ionic flow with no bias directly applied to the graphene channel is observed experimentally, featuring an opposite electron current direction to the ion current. Our experiments and ab initio calculations show that the current generation stems from the confined ion-electron interactions via a nanofluidic Coulomb drag mechanism. Our findings may open up a new dimension for nanofluidics and transport control by ion-electron coupling.
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Affiliation(s)
- Fanfan Chen
- Laboratory of Experimental Physical Biology, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Yunhong Zhao
- Laboratory of Experimental Physical Biology, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Anshul Saxena
- Oden Institute for Computational Engineering and Sciences, Walker Department of Mechanical Engineering, the University of Texas at Austin, Austin, Texas 78712, United States
| | - Chunxiao Zhao
- Laboratory of Experimental Physical Biology, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Mengdi Niu
- Laboratory of Experimental Physical Biology, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
| | - Narayana R Aluru
- Oden Institute for Computational Engineering and Sciences, Walker Department of Mechanical Engineering, the University of Texas at Austin, Austin, Texas 78712, United States
| | - Jiandong Feng
- Laboratory of Experimental Physical Biology, Department of Chemistry, Zhejiang University, Hangzhou, 310027, China
- Research Center for Quantum Sensing, Research Institute of Intelligent Sensing, Zhejiang Lab, Hangzhou, 311121, China
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4
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Adrian AR, Cerda D, Fernández-Izquierdo L, Segura RA, García-Merino JA, Hevia SA. Tunable Low Crystallinity Carbon Nanotubes/Silicon Schottky Junction Arrays and Their Potential Application for Gas Sensing. Nanomaterials (Basel) 2021; 11:3040. [PMID: 34835803 PMCID: PMC8623671 DOI: 10.3390/nano11113040] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/12/2021] [Revised: 11/03/2021] [Accepted: 11/04/2021] [Indexed: 11/16/2022]
Abstract
Highly ordered nanostructure arrays have attracted wide attention due to their wide range of applicability, particularly in fabricating devices containing scalable and controllable junctions. In this work, highly ordered carbon nanotube (CNT) arrays grown directly on Si substrates were fabricated, and their electronic transport properties as a function of wall thickness were explored. The CNTs were synthesized by chemical vapor deposition inside porous alumina membranes, previously fabricated on n-type Si substrates. The morphology of the CNTs, controlled by the synthesis parameters, was characterized by electron microscopies and Raman spectroscopy, revealing that CNTs exhibit low crystallinity (LC). A study of conductance as a function of temperature indicated that the dominant electric transport mechanism is the 3D variable range hopping. The electrical transport explored by I-V curves was approached by an equivalent circuit based on a Schottky diode and resistances related to the morphology of the nanotubes. These junction arrays can be applied in several fields, particularly in this work we explored their performance in gas sensing mode and found a fast and reliable resistive response at room temperature in devices containing LC-CNTs with wall thickness between 0.4 nm and 1.1 nm.
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Affiliation(s)
- Alvaro R. Adrian
- Instituto de Física, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile; (A.R.A.); (D.C.); (J.A.G.-M.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile
| | - Daniel Cerda
- Instituto de Física, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile; (A.R.A.); (D.C.); (J.A.G.-M.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile
| | - Leunam Fernández-Izquierdo
- Department of Material Science & Engineering, The University of Texas at Dallas, Richardson, TX 75080, USA;
| | - Rodrigo A. Segura
- Instituto de Química y Bioquímica, Universidad de Valparaíso, Avenida Gran Bretaña 1111, Valparaíso 2340000, Chile;
| | - José Antonio García-Merino
- Instituto de Física, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile; (A.R.A.); (D.C.); (J.A.G.-M.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile
| | - Samuel A. Hevia
- Instituto de Física, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile; (A.R.A.); (D.C.); (J.A.G.-M.)
- Centro de Investigación en Nanotecnología y Materiales Avanzados, Pontificia Universidad Católica de Chile, Casilla 306, Santiago 6904411, Chile
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Zhong M, Meng H, Liu S, Yang H, Shen W, Hu C, Yang J, Ren Z, Li B, Liu Y, He J, Xia Q, Li J, Wei Z. In-Plane Optical and Electrical Anisotropy of 2D Black Arsenic. ACS Nano 2021; 15:1701-1709. [PMID: 33331154 DOI: 10.1021/acsnano.0c09357] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/07/2023]
Abstract
Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties and potential applications in multifunctional nanoelectronic and optoelectronic devices. However, anisotropic 2D semiconductors with high performance are still very limited. Here, we report the systematic study of in-plane anisotropic properties in few-layered b-As that is a narrow-gap semiconductor, based on the experimental and theoretical investigations. According to experimental results, we have come up with a simple method for identifying the orientation of b-As crystals. Meanwhile, we show that the maximum mobility of electrons and holes was measured in the in-plane armchair (AC) direction. The measured maximum electron mobility ratio is about 2.68, and the hole mobility ratio is about 1.79.
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Affiliation(s)
- Mianzeng Zhong
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, China
| | - Haotong Meng
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, China
| | - Sijie Liu
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, China
| | - Huai Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Wanfu Shen
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, China
| | - Chunguang Hu
- State Key Laboratory of Precision Measuring Technology and Instruments, Tianjin University, Tianjin 300072, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Zhihui Ren
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
| | - Bo Li
- Department of Applied Physics, School of Physics and Electronics, Hunan University, Changsha 410082, Hunan, China
| | - Yunyan Liu
- School of Physics and Optoelectronic Engineering, Shandong University of Technology, Zibo 255049, Shandong, China
| | - Jun He
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, China
| | - Qinglin Xia
- Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, China
| | - Jingbo Li
- Institute of Semiconductors, South China Normal University, Guangzhou 510631, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China
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6
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Iemmo L, Urban F, Giubileo F, Passacantando M, Di Bartolomeo A. Nanotip Contacts for Electric Transport and Field Emission Characterization of Ultrathin MoS 2 Flakes. Nanomaterials (Basel) 2020; 10:E106. [PMID: 31947985 DOI: 10.3390/nano10010106] [Citation(s) in RCA: 18] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/16/2019] [Revised: 12/31/2019] [Accepted: 01/02/2020] [Indexed: 11/21/2022]
Abstract
We report a facile approach based on piezoelectric-driven nanotips inside a scanning electron microscope to contact and electrically characterize ultrathin MoS2 (molybdenum disulfide) flakes on a SiO2/Si (silicon dioxide/silicon) substrate. We apply such a method to analyze the electric transport and field emission properties of chemical vapor deposition-synthesized monolayer MoS2, used as the channel of back-gate field effect transistors. We study the effects of the gate-voltage range and sweeping time on the channel current and on its hysteretic behavior. We observe that the conduction of the MoS2 channel is affected by trap states. Moreover, we report a gate-controlled field emission current from the edge part of the MoS2 flake, evidencing a field enhancement factor of approximately 200 and a turn-on field of approximately 40 V/μm at a cathode–anode separation distance of 900 nm.
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7
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Lapointe F, Sapkota A, Ding J, Lefebvre J. Polymer Encapsulants for Threshold Voltage Control in Carbon Nanotube Transistors. ACS Appl Mater Interfaces 2019; 11:36027-36034. [PMID: 31532620 DOI: 10.1021/acsami.9b09857] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Although carbon nanotube transistors present outstanding performances based on key metrics, large-scale uniformity and repeatability required in printable electronics depend greatly on proper control of the electrostatic environment. Through a survey of polymer dielectric encapsulants compatible with printing processes, a simple correlation is found between the measured interfacial charge density and the onset of conduction in a transistor, providing a rational route to control the electrical characteristics of carbon nanotube transistors. Smooth and continuous balancing of the properties between unipolar p-type and n-type transport is achieved using a molar fraction series of poly(styrene-co-2-vinylpyridine) statistical copolymers combined with an electron-donating molecule. We further demonstrate the easy fabrication of a p-n diode which shows a modest rectification of 8:1.
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Affiliation(s)
- François Lapointe
- National Research Council Canada , 1200 Montreal Road , Ottawa K1A 0R6 , Ontario , Canada
| | - Ashish Sapkota
- National Research Council Canada , 1200 Montreal Road , Ottawa K1A 0R6 , Ontario , Canada
- Department of Printed Electronics Engineering , Sunchon National University , Sunchon 540-742 , Korea
| | - Jianfu Ding
- National Research Council Canada , 1200 Montreal Road , Ottawa K1A 0R6 , Ontario , Canada
| | - Jacques Lefebvre
- National Research Council Canada , 1200 Montreal Road , Ottawa K1A 0R6 , Ontario , Canada
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8
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Neumann C, Kaiser D, Mohn MJ, Füser M, Weber NE, Reimer O, Gölzhäuser A, Weimann T, Terfort A, Kaiser U, Turchanin A. Bottom-Up Synthesis of Graphene Monolayers with Tunable Crystallinity and Porosity. ACS Nano 2019; 13:7310-7322. [PMID: 31117384 DOI: 10.1021/acsnano.9b03475] [Citation(s) in RCA: 12] [Impact Index Per Article: 2.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/09/2023]
Abstract
We present a method for a bottom-up synthesis of atomically thin graphene sheets with tunable crystallinity and porosity using aromatic self-assembled monolayers (SAMs) as molecular precursors. To this end, we employ SAMs with pyridine and pyrrole constituents on polycrystalline copper foils and convert them initially into molecular nanosheets-carbon nanomembranes (CNMs)- via low-energy electron irradiation induced cross-linking and then into graphene monolayers via pyrolysis. As the nitrogen atoms are leaving the nanosheets during pyrolysis, nanopores are generated in the formed single-layer graphene. We elucidate the structural changes upon the cross-linking and pyrolysis down to the atomic scale by complementary spectroscopy and microscopy techniques including X-ray photoelectron and Raman spectroscopy, low energy electron diffraction, atomic force, helium ion, and high-resolution transmission electron microscopy, and electrical transport measurements. We demonstrate that the crystallinity and porosity of the formed graphene can be adjusted via the choice of molecular precursors and pyrolysis temperature, and we present a kinetic growth model quantitatively describing the conversion of molecular CNMs into graphene. The synthesized nanoporous graphene monolayers resemble a percolated network of graphene nanoribbons with a high charge carrier mobility (∼600 cm2/(V s)), making them attractive for implementations in electronic field-effect devices.
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Affiliation(s)
- Christof Neumann
- Institute of Physical Chemistry , Friedrich Schiller University Jena , 07743 Jena , Germany
| | - David Kaiser
- Institute of Physical Chemistry , Friedrich Schiller University Jena , 07743 Jena , Germany
| | - Michael J Mohn
- Central Facility of Electron Microscopy , Ulm University , 89081 Ulm , Germany
| | - Matthias Füser
- Institute of Inorganic and Analytical Chemistry , University of Frankfurt , 60348 Frankfurt , Germany
| | - Nils-Eike Weber
- Faculty of Physics , Bielefeld University , Bielefeld 33615 , Germany
| | - Oliver Reimer
- Faculty of Physics , Bielefeld University , Bielefeld 33615 , Germany
| | - Armin Gölzhäuser
- Faculty of Physics , Bielefeld University , Bielefeld 33615 , Germany
| | - Thomas Weimann
- Physikalisch-Technische Bundesanstalt , 38116 Braunschweig , Germany
| | - Andreas Terfort
- Institute of Inorganic and Analytical Chemistry , University of Frankfurt , 60348 Frankfurt , Germany
| | - Ute Kaiser
- Central Facility of Electron Microscopy , Ulm University , 89081 Ulm , Germany
| | - Andrey Turchanin
- Institute of Physical Chemistry , Friedrich Schiller University Jena , 07743 Jena , Germany
- Central Facility of Electron Microscopy , Ulm University , 89081 Ulm , Germany
- Jena Center for Soft Matter (JCSM) , 07743 Jena , Germany
- Center of Energy and Environmental Chemistry (CEEC Jena) , 07743 Jena , Germany
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9
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André A, Weber M, Wurst KM, Maiti S, Schreiber F, Scheele M. Electron-Conducting PbS Nanocrystal Superlattices with Long-Range Order Enabled by Terthiophene Molecular Linkers. ACS Appl Mater Interfaces 2018; 10:24708-24714. [PMID: 29968457 DOI: 10.1021/acsami.8b06044] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/28/2023]
Abstract
PbS nanocrystals are surface-functionalized with the organic semiconductor 5,5″-dithiol-[2,2':5,2″-terthiophene] and assembled to afford hybrid nanostructured thin films with a large structural coherence and an electron mobility of 0.2 cm2/(V s). Electrochemistry, optical spectroscopy, and quantum mechanical calculations are applied to elucidate the electronic structure at the inorganic/organic interface, and it is established that electron injection into the molecule alters its (electronic) structure, which greatly facilitates coupling of the neighboring PbS 1Se states. This is verified by field-effect and electrochemically gated transport measurements, and evidence is provided that carrier transport occurs predominantly via the 1Se states. The presented material allows studying structure-transport correlations and exploring transport anisotropies in semiconductor nanocrystal superlattices.
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Affiliation(s)
- Alexander André
- Institute for Physical and Theoretical Chemistry , University of Tübingen , Auf der Morgenstelle 18 , 72076 Tübingen , Germany
| | - Michelle Weber
- Institute for Physical and Theoretical Chemistry , University of Tübingen , Auf der Morgenstelle 18 , 72076 Tübingen , Germany
| | - Kai M Wurst
- Institute for Physical and Theoretical Chemistry , University of Tübingen , Auf der Morgenstelle 18 , 72076 Tübingen , Germany
| | - Santanu Maiti
- Institute of Applied Physics , University of Tübingen , Auf der Morgenstelle 10 , 72076 Tübingen , Germany
| | - Frank Schreiber
- Institute of Applied Physics , University of Tübingen , Auf der Morgenstelle 10 , 72076 Tübingen , Germany
- Center for Light-Matter Interaction, Sensors & Analytics LISA+ , University of Tübingen , Auf der Morgenstelle 15 , 72076 Tübingen , Germany
| | - Marcus Scheele
- Institute for Physical and Theoretical Chemistry , University of Tübingen , Auf der Morgenstelle 18 , 72076 Tübingen , Germany
- Center for Light-Matter Interaction, Sensors & Analytics LISA+ , University of Tübingen , Auf der Morgenstelle 15 , 72076 Tübingen , Germany
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10
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Tanabe Y, Ito Y, Sugawara K, Hojo D, Koshino M, Fujita T, Aida T, Xu X, Huynh KK, Shimotani H, Adschiri T, Takahashi T, Tanigaki K, Aoki H, Chen M. Electric Properties of Dirac Fermions Captured into 3D Nanoporous Graphene Networks. Adv Mater 2016; 28:10304-10310. [PMID: 27726184 DOI: 10.1002/adma.201601067] [Citation(s) in RCA: 16] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/23/2016] [Revised: 06/01/2016] [Indexed: 05/24/2023]
Abstract
Nanoporous graphene- based electric-double-layer transistors (EDLTs) are successfully fabricated. Transport measurements of the EDLTs demonstrate that the ambipolar electronic states of massless Dirac fermions with a high carrier mobility are well preserved in 3D nanoporous graphene along with anomalous nonlinear Hall resistance and exceptional transistor on/off ratio. This study may open a new avenue for device applications of graphene.
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Affiliation(s)
- Yoichi Tanabe
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
| | - Yoshikazu Ito
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Katsuaki Sugawara
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Daisuke Hojo
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Mikito Koshino
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
| | - Takeshi Fujita
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Tsutomu Aida
- New Industry Creation Hatchery Center (NICHe), Tohoku University, Sendai, 980-8579, Japan
| | - Xiandong Xu
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Khuong Kim Huynh
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Hidekazu Shimotani
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
| | - Tadafumi Adschiri
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Takashi Takahashi
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Katsumi Tanigaki
- Department of Physics, Graduate School of Science, Tohoku University, Sendai, 980-8578, Japan
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
| | - Hideo Aoki
- Department of Physics, University of Tokyo, Hongo, Tokyo, 113-0033, Japan
| | - Mingwei Chen
- WPI Advanced Institute for Materials Research, Tohoku University, Sendai, 980-8577, Japan
- CREST, Japan Science and Technology Agency, Saitama, 332-0012, Japan
- Department of Materials Science and Engineering, Johns Hopkins University, Baltimore, MD, 21214, USA
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11
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Neumann C, Rizzi L, Reichardt S, Terrés B, Khodkov T, Watanabe K, Taniguchi T, Beschoten B, Stampfer C. Spatial Control of Laser-Induced Doping Profiles in Graphene on Hexagonal Boron Nitride. ACS Appl Mater Interfaces 2016; 8:9377-9383. [PMID: 26986938 DOI: 10.1021/acsami.6b01727] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride heterostructures. The technique is based on photoinduced doping by a focused laser beam and does neither require masks nor photoresists. This makes our technique interesting for rapid prototyping of unconventional electronic device schemes, where the spatial resolution of the rewritable, long-term stable doping profiles is limited by only the laser spot size (≈600 nm) and the accuracy of sample positioning. Our optical doping method offers a way to implement and to test different, complex doping patterns in one and the very same graphene device, which is not achievable with conventional gating techniques.
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Affiliation(s)
- Christoph Neumann
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich , 52425 Jülich, Germany
| | - Leo Rizzi
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany
| | - Sven Reichardt
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany
- Physics and Materials Science Research Unit, Université du Luxembourg , 1511 Luxembourg, Luxembourg
| | - Bernat Terrés
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich , 52425 Jülich, Germany
| | - Timofiy Khodkov
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich , 52425 Jülich, Germany
| | - Kenji Watanabe
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan
| | - Bernd Beschoten
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany
| | - Christoph Stampfer
- JARA-FIT and 2nd Institute of Physics, RWTH Aachen University , 52074 Aachen, Germany
- Peter Grünberg Institute (PGI-9), Forschungszentrum Jülich , 52425 Jülich, Germany
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Zota CB, Lindgren D, Wernersson LE, Lind E. Quantized Conduction and High Mobility in Selectively Grown In(x)Ga(1-x)As Nanowires. ACS Nano 2015; 9:9892-9897. [PMID: 26387961 DOI: 10.1021/acsnano.5b03318] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.1] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
We report measured quantized conductance and quasi-ballistic transport in selectively regrown In0.85Ga0.15As nanowires. Very low parasitic resistances obtained by regrowth techniques allow us to probe the near-intrinsic electrical properties, and we observe several quantized conductance steps at 10 K. We extract a mean free path of 180 ± 40 nm and an effective electron mobility of 3300 ± 300 cm(2)/V·s, both at room temperature, which are among the largest reported values for nanowires of similar dimensions. In addition, optical characterization of the nanowires by photoluminescence and Raman measurement is performed. We find an unintentional increase of indium in the InxGa1-xAs composition relative to the regrown film layer, as well as partial strain relaxation.
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Affiliation(s)
- Cezar B Zota
- Department of Electrical and Information Technology and ‡Division of Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - David Lindgren
- Department of Electrical and Information Technology and ‡Division of Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Lars-Erik Wernersson
- Department of Electrical and Information Technology and ‡Division of Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
| | - Erik Lind
- Department of Electrical and Information Technology and ‡Division of Solid State Physics, Lund University , Box 118, 22100 Lund, Sweden
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