Anisotropic Semicrystalline Homopolymer Dielectrics for High-Temperature Capacitive Energy Storage

High-temperature dielectric polymers are in high demand for powering applications in extreme environments. Here, we have developed high-temperature homopolymer dielectrics with anisotropy by leveraging the hierarchical structure in semicrystalline polymers. The lamellae have been aligned parallel to the surface in the dielectric films. This structural arrangement resembles the horizontal alignment of nanosheet fillers in polymer nanocomposites and nanosheet-like lamellae in block copolymers, which has been proven to provide the optimal topological structure for electrical energy storage. The unique ordering of lamellae in our dielectric films endue a significantly increased breakdown strength and a reduced leakage current compared to amorphous films. This novel approach of enhancing the capacitive energy storage properties by controlled orientation of lamellae in homopolymer offers a new perspective for the design of high-temperature polymer dielectrics.

Constructing Novel High Dielectric Constant Polyimides Containing Dipolar Pendant Groups with Enhanced Orientational Polarization

Polymer dielectrics with high dielectric constant are urgently demanded for potential electrical and pulsed power applications. The design of polymers with side chains containing dipolar groups is considered an effective method for preparing materials with a high dielectric constant and low loss. This study synthesizes and comprehensively compare the dielectric properties of novel polyimides with side chains containing urea (BU-PI), carbamate (BC-PI), and sulfonyl (BS-PI) functional groups. The novel polyimides exhibit relatively high dielectric constant and low dielectric loss values due to the enhanced orientational polarization and suppressed dipole-dipole interactions of dipolar groups. In particular, BU-PI containing urea pendant groups presents the highest dielectric constant of 6.14 and reasonably low dielectric loss value of 0.0097. The strong γ transitions with low activation energies derived from dielectric spectroscopy measurements have been further evaluated to demonstrate the enhanced free rotational motion of urea pendant dipoles. In energy storage applications, BU-PI achieves a discharged energy density of 6.92 J cm-3 and a charge-discharge efficiency above 83% at 500 MV m-1. This study demonstrates that urea group, as dipolar pendant group, can provide polymers with better dielectric properties than the most commonly used sulfonyl groups.

Probing Electronic Band Structures of Dielectric Polymers via Pre-Breakdown Conduction

The electronic band structure, especially the defect states at the conduction band tail, dominates electron transport and electrical degradation of a dielectric material under an extremely high electric field. However, the electronic band structure in a dielectric is barely well studied due to experimental challenges in detecting the electrical conduction to an extremely high electric field, i.e., prebreakdown. In this work, the electronic band structure of polymer dielectric films is probed through an in situ prebreakdown conduction measurement method in conjunction with a space-charge-limited-current spectroscopic analysis. An exponential distribution of defect states at the conduction band tail with varying trap levels is observed in accordance with the specific morphological disorder in the polymer dielectric, and the experimental defect states show also a favorable agreement with the calculated density of states from the density functional theory. The methodology demonstrated in this work bridges the molecule-structure-determined electronic band structure and the macro electrical conduction behavior with a highly improved understanding of material properties that control the electrical breakdown, and paves a way for guiding the modification of existing material and the exploration of novel materials for high electric field applications.

Mechanism Study of Molecular Trap in All-Organic Polystyrene-Based Dielectric Composite

It is a huge challenge to explore how charge traps affect the electric breakdown of polymer-based dielectric composites. In this paper, alkane and aromatic molecules with different substituents are investigated according to DFT theoretical method. The combination of strong electron-withdrawing groups and aromatic rings can establish high electron affinity molecules. 4'-Nitro-4-dimethylaminoazobenzene (NAABZ) with a vertical electron affinity of 1.39 eV and a dipole moment of 10.15 D is introduced into polystyrene (PSt) to analyze the influence of charge traps on electric properties. Marcus charge transfer theory is applied to calculate the charge transfer rate between PSt and NAABZ. The nature of charge traps is elaborated from a dynamic perspective. The enhanced breakdown mechanism of polymers-based composites stems from the constraint of carrier mobility caused by the change in transfer rate. But the electrophile nature of high electron affinity filler can decrease the potential barriers at the metal-polymer interface. Simultaneously, the relationship between the electron affinity of fillers and the breakdown strength of polymer-based composites is nonlinear because of the presence of the inversion region. Based on the deep understanding of the molecular trap, this work provides the theoretical calculation for the design and development of high-performance polymer dielectrics.

Unifying and Suppressing Conduction Losses of Polymer Dielectrics for Superior High-Temperature Capacitive Energy Storage

Superior high-temperature capacitive performance of polymer dielectrics is critical for the modern film capacitor demanded in the harsh-environment electronic and electrical systems. Unfortunately, the capacitive performance degrades rapidly at elevated temperatures owing to the exponential growth of conduction loss. The conduction loss is mainly composed of electrode and bulk-limited conduction. Herein, the contribution of surface and bulk factors is unified to conduction loss, and the loss is thoroughly suppressed. The experimental results demonstrate that the polar oxygen-containing groups on the surface of polymer dielectrics can act as the charge trap sites to immobilize the injected charges from electrode, which can in turn establish a built-in field to weaken the external electric field and augment the injection barrier height. Wide bandgap aluminum oxide (Al2 O3 ) nanoparticle fillers can serve as deep traps to constrain the transport of injected or thermally activated charges in the bulk phase. From this, at 200 °C, the discharged energy density with a discharge-charge efficiency of 90% increases by 1058.06% from 0.31 J cm-3 for pristine polyetherimide to 3.59 J cm-3 for irradiated composite film. The principle of simultaneously inhibiting the electrode and bulk-limited conduction losses could be easily extended to other polymer dielectrics for high-temperature capacitive performance.

A Review of Polymer Dielectrics for Redistribution Layers in Interposers and Package Substrates

The ever-increasing demand for faster computing has led us to an era of heterogeneous integration, where interposers and package substrates have become essential components for further performance scaling. High-bandwidth connections are needed for faster communication between logic and memory dies. There are several limitations to current generation technologies, and dielectric buildup layers are a key part of addressing those issues. Although there are several polymer dielectrics available commercially, there are numerous challenges associated with incorporating them into interposers or package substrates. This article reviewed the properties of polymer dielectric materials currently available, their properties, and the challenges associated with their fabrication, electrical performance, mechanical reliability, and electrical reliability. The current state-of-the-art is discussed, and guidelines are provided for polymer dielectrics for the next-generation interposers.

Breaking the Trade-Off Between Polymer Dielectric Constant and Loss via Aluminum Oxo Macrocycle Dopants for High-Performance Neuromorphic Electronics

The dielectric layer is crucial in regulating the overall performance of field-effect transistors (FETs), the key component in central processing units, sensors, and displays. Despite considerable efforts being devoted to developing high-permittivity (k) dielectrics, limited progress is made due to the inherent trade-off between dielectric constant and loss. Here, a solution is presented by designing a monodispersed disk-shaped Ce-Al-O-macrocycle as a dopant in polymer dielectrics. The molecule features a central Ce(III) core connected with eight Al atoms through sixteen bridging hydroxyls and eight 3-aminophenyl peripheries. The incorporation of this macrocycle in polymer dielectrics results in an up to sevenfold increase in dielectric constants and up to 89% reduction in dielectric loss at low frequencies. Moreover, the leakage-current densities decrease, and the breakdown strengths are improved by 63%. Relying on the above merits, FETs bearing cluster-doped polymer dielectrics give near three-orders source-drain current increments while maintaining low-level leakage/off currents, resulting in much higher charge-carrier mobilities (up to 2.45 cm2  V-1  s-1 ) and on/off ratios. This cluster-doping strategy is generalizable and shows great promise for ultralow-power photoelectric synapses and neuromorphic retinas. This work successfully breaks the trade-off between dielectric constant and loss and offers a unique design for polymer composite dielectrics.

Achieve High Dielectric and Energy-Storage Density Properties by Employing Cyanoethyl Cellulose as Fillers in PVDF-Based Polymer Composites

Fluoropolymer/inorganic nanofiller composites are considered to be ideal polymer dielectrics for energy storage applications because of their high dielectric constant and high breakdown strength. However, these advantages are a trade-off with the unavoidable aggregation of the inorganic nanofillers, which result in a reduced discharge of the energy storage density. To address this problem, we developed polyvinylidene fluoride (PVDF) graft copolymer/cellulose-derivative composites to achieve high-dielectric and energy-storage density properties. An enhanced dielectric constant and improved energy density were achieved with this structure. The optimal composites exhibited a high discharge energy density of 8.40 J/cm³ at 300 MV/m. This work provides new insight into the development of all-organic composites with bio-based nanofillers.

Alternating [1.1.1]Propellane-(Meth)Acrylate Copolymers: A New Class of Dielectrics with High Energy Density for Film Capacitors

Polymer dielectrics with high energy density are of urgent demand in electric and electronic devices, but the tradeoff between dielectric constant and breakdown strength is still unsolved. Herein, the synthesis and molar mass control of three alternating [1.1.1]propellane-(meth)acrylate copolymers, denoted as P-MA, P-MMA, and P-EA, respectively, are reported. These copolymers exhibit high thermal stability and are semi-crystalline with varied glass transition temperatures and melting temperatures. The rigid bicyclo[1.1.1]pentane units in the polymer backbone promote the orientational polarization of the polar ester groups, thus enhancing the dielectric constants of these polymers, which are 4.50 for P-EA, 4.55 for P-MA, and 5.11 for P-MMA at 10 Hz and room temperature, respectively. Moreover, the high breakdown strength is ensured by the non-conjugated nature of bicyclo[1.1.1]pentane unit. As a result, these copolymers show extraordinary energy storage performance; P-MA exhibits a discharge energy density of 9.73 J cm^-3 at 750 MV m^-1 and ambient temperature. This work provides a new type of promising candidates as polymer dielectrics for film capacitors, and offers an efficient strategy to improve the dielectric and energy storage properties by introducing rigid non-conjugated bicyclo[1.1.1]pentane unit into the polymer backbone.

Suppressing the Loss of Polymer-Based Dielectrics for High Power Energy Storage

Polymer-based dielectrics have received intensive interest from academic community in the field of high-power energy storage owing to their superior flexibility and fast charge-discharge ability. Recently, how to suppress the loss of polymer-based dielectrics has been increasingly recognized as a critical point to attain a high charge-discharge efficiency in the film capacitors. Some achievements are made in analyzing the source of loss and suppressing loss via Edison's trial and error method. In this review, the significance of suppressing loss in polymer-based dielectrics is firstly emphasized. Then, different sources of loss are discussed carefully and an in-depth analysis of the related measurements is presented. Next, recent research results in suppressing loss are summarized and discussed in detail according to different strategies. Finally, the challenges and opportunities in the loss suppression research for the rational design of high-efficiency polymer-based dielectrics are proposed.

All-Aerosol-Jet-Printed Carbon Nanotube Transistor with Cross-Linked Polymer Dielectrics

The printability of reliable gate dielectrics and their influence on the stability of the device are some of the primary concerns regarding the practical application of printed transistors. Major ongoing research is focusing on the structural properties of dielectric materials and deposition parameters to reduce interface charge traps and hysteresis caused by the dielectric-semiconductor interface and dielectric bulk. This research focuses on improving the dielectric properties of a printed polymer material, cross-linked polyvinyl phenol (crPVP), by optimizing the cross-linking parameters as well as the aerosol jet printability. These improvements were then applied to the fabrication of completely printed carbon nanotube (CNT)-based thin-film transistors (TFT) to reduce the gate threshold voltage (V_th) and hysteresis in V_th during device operation. Finally, a fully aerosol-jet-printed CNT device was demonstrated using a 2:1 weight ratio of PVP with the cross-linker poly(melamine-co-formaldehyde) methylated (PMF) in crPVP as the dielectric material. This device shows significantly less hysteresis and can be operated at a gate threshold voltage as low as -4.8 V with an on/off ratio of more than 10⁴.

Progress on Polymer Dielectrics for Electrostatic Capacitors Application

Polymer dielectrics are attracting increasing attention for electrical energy storage owing to their advantages of mechanical flexibility, corrosion resistance, facile processability, light weight, great reliability, and high operating voltages. However, the dielectric constants of most dielectric polymers are less than 10, which results in low energy densities and limits their applications in electrostatic capacitors for advanced electronics and electrical power systems. Therefore, intensive efforts have been placed on the development of high-energy-density polymer dielectrics. In this perspective, the most recent results on the all-organic polymer dielectrics are summarized, including molecular structure design, polymer blends, and layered structured polymers. The challenges in the field and suggestions for future research on high-energy-density polymer dielectrics are also presented.

Heterogeneous Functional Dielectric Patterns for Charge-Carrier Modulation in Ultraflexible Organic Integrated Circuits

Flexible electronics have gained considerable attention for application in wearable devices. Organic transistors are potential candidates to develop flexible integrated circuits (ICs). A primary technique for maximizing their reliability, gain, and operation speed is the modulation of charge-carrier behavior in the respective transistors fabricated on the same substrate. In this work, heterogeneous functional dielectric patterns (HFDP) of ultrathin polymer gate dielectrics of poly((±)endo,exo-bicyclo[2.2.1]hept-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) are introduced. The HFDP that are obtained via the photo-Fries rearrangement by ultraviolet radiation in the homogeneous PNDPE provide a functional area for charge-carrier modulation. This leads to programmable threshold voltage control over a wide range (-1.5 to +0.2 V) in the transistors with a high patterning resolution, at 2 V operational voltage. The transistors also exhibit high operational stability over 140 days and under the bias-stress duration of 1800 s. With the HFDP, the performance metrics of ICs, for example, the noise margin and gain of the zero-V_GS load inverters and the oscillation frequency of ring oscillators are improved to 80%, 1200, and 2.5 kHz, respectively, which are the highest among the previously reported zero-V_GS -based organic circuits. The HFDP can be applied to much complex and ultraflexible ICs.

Chemically Tunable Organic Dielectric Layer on an Oxide TFT: Poly(p-xylylene) Derivatives

Inorganic materials such as SiO_x and SiN_x are commonly used as dielectric layers in thin-film transistors (TFTs), but recent advancements in TFT devices, such as inclusion in flexible electronics, require the development of novel types of dielectric layers. In this study, CVD-deposited poly(p-xylylene) (PPx)-based polymers were evaluated as alternative dielectric layers. CVD-deposited PPx can produce thin, conformal, and pinhole-free polymer layers on various surfaces, including oxides and metals, without interfacial defects. Three types of commercial polymers were successfully deposited on various substrates and exhibited stable dielectric properties under frequency and voltage sweeps. Additionally, TFTs with PPx as a dielectric material and an oxide semiconductor exhibited excellent device performance; a mobility as high as 22.72 cm²/(V s), which is the highest value among organic gate dielectric TFTs, to the best of our knowledge. Because of the low-temperature deposition process and its unprecedented mechanical flexibility, TFTs with CVD-deposited PPx were successfully fabricated on a flexible plastic substrate, exhibiting excellent durability over 10000 bending cycles. Finally, a custom-synthesized functionalized PPx was introduced into top-gated TFTs, demonstrating the possibility for expanding this concept to a wide range of chemistries with tunable gate dielectric layers.

Reviving the "Schottky" Barrier for Flexible Polymer Dielectrics with a Superior 2D Nanoassembly Coating

The organic insulator-metal interface is the most important junction in flexible electronics. The strong band offset of organic insulators over the Fermi level of electrodes should theoretically impart a sufficient impediment for charge injection known as the Schottky barrier. However, defect formation through Anderson localization due to topological disorder in polymers leads to reduced barriers and hence cumbersome devices. A facile nanocoating comprising hundreds of highly oriented organic/inorganic alternating nanolayers is self-coassembled on the surface of polymer films to revive the Schottky barrier. Carrier injection over the enhanced barrier is further shunted by anisotropic 2D conduction. This new interface engineering strategy allows a significant elevation of the operating field for organic insulators by 45% and a 7× improvement in discharge efficiency for Kapton at 150 °C. This superior 2D nanocoating thus provides a defect-tolerant approach for effective reviving of the Schottky barrier, one century after its discovery, broadly applicable for flexible electronics.

Polymer Dielectrics with Simultaneous Ultrahigh Energy Density and Low Loss

Polymer dielectrics are highly desirable in capacitor applications due to their low cost, high breakdown strength, and unique self-healing capability. However, existing polymer dielectrics suffer from either a low energy density or a high dielectric loss, thereby hindering the development of compact, efficient, and reliable power electronics. Here, a novel type of polymer dielectrics simultaneously exhibiting an extraordinarily high recoverable energy density of 35 J cm^-3 and a low dielectric loss is reported. It is synthesized by grafting zwitterions onto the short side chains of a poly(4-methyl-1-pentene) (PMP)-based copolymer, which increases its dielectric constant from ≈2.2 to ≈5.2 and significantly enhances its breakdown strength from ≈700 MV m^-1 to ≈1300 MV m^-1 while maintaining its low dielectric loss of <0.002 and high charge-discharge efficiency of >90%. Based on a combination of the phase-field method description of mesoscale structures, Maxwell equations, and theoretical analysis, it is demonstrated that the outstanding combination of high energy density and low dielectric loss of zwitterions-grafted copolymers is attributed to the covalent-bonding restricted ion polarization and the strong charge trapping by the zwitterions. This work represents a new strategy in polymer dielectrics for achieving simultaneous high energy density and low dielectric loss.

Microstructures in All-Inkjet-Printed Textile Capacitors with Bilayer Interfaces of Polymer Dielectrics and Metal-Organic Decomposition Silver Electrodes

Soft printed electronics exhibit unique structures and flexibilities suited for a plethora of wearable applications. However, forming scalable, reliable multilayered electronic devices with heterogeneous material interfaces on soft substrates, especially on porous and anisotropic structures, is highly challenging. In this study, we demonstrate an all-inkjet-printed textile capacitor using a multilayered structure of bilayer polymer dielectrics and particle-free metal-organic decomposition (MOD) silver electrodes. Understanding the inherent porous/anisotropic microstructure of textiles and their surface energy relationship was an important process step for successful planarization. The MOD silver ink formed a foundational conductive layer through the uniform encapsulation of individual fibers without blocking fiber interstices. Urethane-acrylate and poly(4-vinylphenol)-based bilayers were able to form a planarized dielectric layer on polyethylene terephthalate textiles. A unique chemical interaction at the interfaces of bilayer dielectrics performed a significant role in insulating porous textile substrates resulting in high chemical and mechanical durability. In this work, we demonstrate how textiles' unique microstructures and bilayer dielectric layer designs benefit reliability and scalability in the inkjet process as well as the use in wearable electronics with electromechanical performance.

Molecular Weight Enables Fine-Tuning the Thermal and Dielectric Properties of Polymethacrylates Bearing Sulfonyl and Nitrile Groups as Dipolar Entities

In this work, polymethacrylates containing sulfonyl and nitrile functional groups were successfully prepared by conventional radical polymerization and reversible addition-fragmentation chain-transfer polymerization (RAFT). The thermal and dielectric properties were evaluated, for the first time, considering differences in their molecular weights and dispersity values. Variations of the aforementioned properties do not seem to substantially affect the polarized state of these materials, defined in terms of the parameters ε'_r, ε"_r and tan (δ). However, the earlier appearance of dissipative phenomena on the temperature scale for materials with lower molecular weights or broader molecular weight distributions, narrows the range of working temperatures in which they exhibit high dielectric constants along with low loss factors. Notwithstanding the above, as all polymers showed, at room temperature, ε'_r values above 9 and loss factors below 0.02, presenting higher dielectric performance when compared to conventional polymer materials, they could be considered as good candidates for energy storage applications.

Flexible Temperature-Invariant Polymer Dielectrics with Large Bandgap

Flexible dielectrics operable under simultaneous electric and thermal extremes are critical to advanced electronics for ultrahigh densities and/or harsh conditions. However, conventional high-performance polymer dielectrics generally have conjugated aromatic backbones, leading to limited bandgaps and hence high conduction loss and poor energy densities, especially at elevated temperatures. A polyoxafluoronorbornene is reported, which has a key design feature in that it is a polyolefin consisting of repeating units of fairly rigid fused bicyclic structures and alkenes separated by freely rotating single bonds, endowing it with a large bandgap of ≈5 eV and flexibility, while being temperature-invariantly stable over -160 to 160 °C. At 150 °C, the polyoxafluoronorbornene exhibits an electrical conductivity two orders of magnitude lower than the best commercial high-temperature polymers, and features an unprecedented discharged energy density of 5.7 J cm^-3 far outperforming the best reported flexible dielectrics. The design strategy uncovered in this work reveals a hitherto unexplored space for the design of scalable and efficient polymer dielectrics for electrical power and electronic systems under concurrent harsh electrical and thermal conditions.

Polymer Encapsulants for Threshold Voltage Control in Carbon Nanotube Transistors

Although carbon nanotube transistors present outstanding performances based on key metrics, large-scale uniformity and repeatability required in printable electronics depend greatly on proper control of the electrostatic environment. Through a survey of polymer dielectric encapsulants compatible with printing processes, a simple correlation is found between the measured interfacial charge density and the onset of conduction in a transistor, providing a rational route to control the electrical characteristics of carbon nanotube transistors. Smooth and continuous balancing of the properties between unipolar p-type and n-type transport is achieved using a molar fraction series of poly(styrene-co-2-vinylpyridine) statistical copolymers combined with an electron-donating molecule. We further demonstrate the easy fabrication of a p-n diode which shows a modest rectification of 8:1.

Polyitaconates: A New Family of "All-Polymer" Dielectrics

This work presents the synthesis of new poly(itaconate)s containing sulfone or nitrile pendant groups through conventional radical polymerization together with their characterization and comparison with poly(methacrylate)s containing identical groups. Structural and thermal characterization has been carried out in terms of Fourier transform infrared spectroscopy, differential scanning calorimetry, nuclear magnetic resonance, and thermogravimetric analysis. Characterized by broad band dielectric spectroscopy (BDS), all polymers showed dielectric constant values between 7 and 10 (at 25 °C and 1 kHz) and relative low dielectric loss values (≈0.02). BDS measurements showed, for all the polymers analyzed, notorious subglass transitions even at temperatures below -100 °C, resulting in a broad temperature interval in which these polymers exhibit high dielectric constant and could work without high losses. Therefore, these materials seem to be good candidates for dielectric applications such as energy storage, among others.

Control of Concentration of Nonhydrogen-Bonded Hydroxyl Groups in Polymer Dielectrics for Organic Field-Effect Transistors with Operational Stability

Poly(4-vinylphenol) (PVP) is a promising gate dielectric material for organic field-effect transistors (OFETs) and circuits fabricated on plastic substrates. Thermal cross-linking of PVP with a cross-linker, such as poly(melamine- co-formaldehyde) methylated (PMF), at a high temperature (above 170 °C) is widely considered an effective method to remove residual hydroxyl groups that induce polarization effects in the dielectric bulk. However, the threshold voltage shift in transfer characteristics is still observed for an OFET with a PVP-PMF dielectric when it is operated at a slow gate voltage sweep rate. The present study examines the cause of the undesired hysteresis phenomenon and suggests a route to enable a reliable operation. We systematically investigate the effect of the PVP-PMF weight ratio and their annealing temperature on the transfer characteristics of OFETs. We discover that the size of the hysteresis is closely related to the concentration of nonhydrogen-bonded hydroxyl groups in the dielectric bulk and this is controlled by the weight ratio. At a ratio of 0.5:1, a complete elimination of hysteresis was observed irrespective of the annealing temperature. We finally demonstrate a highly reliable operation of small-molecule-based OFETs fabricated on a plastic substrate at a low temperature.

Effect of Polymer Gate Dielectrics on Charge Transport in Carbon Nanotube Network Transistors: Low-k Insulator for Favorable Active Interface

Charge transport in carbon nanotube network transistors strongly depends on the properties of the gate dielectric that is in direct contact with the semiconducting carbon nanotubes. In this work, we investigate the dielectric effects on charge transport in polymer-sorted semiconducting single-walled carbon nanotube field-effect transistors (s-SWNT-FETs) by using three different polymer insulators: A low-permittivity (ε_r) fluoropolymer (CYTOP, ε_r = 1.8), poly(methyl methacrylate) (PMMA, ε_r = 3.3), and a high-ε_r ferroelectric relaxor [P(VDF-TrFE-CTFE), ε_r = 14.2]. The s-SWNT-FETs with polymer dielectrics show typical ambipolar charge transport with high ON/OFF ratios (up to ∼10⁵) and mobilities (hole mobility up to 6.77 cm² V^-1 s^-1 for CYTOP). The s-SWNT-FET with the lowest-k dielectric, CYTOP, exhibits the highest mobility owing to formation of a favorable interface for charge transport, which is confirmed by the lowest activation energies, evaluated by the fluctuation-induced tunneling model (FIT) and the traditional Arrhenius model (E_aFIT = 60.2 meV and E_aArr = 10 meV). The operational stability of the devices showed a good agreement with the activation energies trend (drain current decay ∼14%, threshold voltage shift ∼0.26 V in p-type regime of CYTOP devices). The poor performance in high-ε_r devices is accounted for by a large energetic disorder caused by the randomly oriented dipoles in high-k dielectrics. In conclusion, the low-k dielectric forms a favorable interface with s-SWNTs for efficient charge transport in s-SWNT-FETs.

Rational Co-Design of Polymer Dielectrics for Energy Storage

Although traditional materials discovery has historically benefited from intuition-driven experimental approaches and serendipity, computational strategies have risen in prominence and proven to be a powerful complement to experiments in the modern materials research environment. It is illustrated here how one may harness a rational co-design approach-involving synergies between high-throughput computational screening and experimental synthesis and testing-with the example of polymer dielectrics design for electrostatic energy storage applications. Recent co-design efforts that can potentially enable going beyond present-day "standard" polymer dielectrics (such as biaxially oriented polypropylene) are highlighted. These efforts have led to the identification of several new organic polymer dielectrics within known generic polymer subclasses (e.g., polyurea, polythiourea, polyimide), and the recognition of the untapped potential inherent in entirely new and unanticipated chemical subspaces offered by organometallic polymers. The challenges that remain and the need for additional methodological developments necessary to further strengthen the co-design concept are then presented.