Scanning Nanowelding Lithography for Rewritable One-Step Patterning of Sub-50 nm High-Aspect-Ratio Metal Nanostructures

Scanning Electrochemical Probe Lithography for Ultra-Precision Machining of Micro-Optical Elements with Freeform Curved Surface

Two challenges should be overcome for the ultra-precision machining of micro-optical element with freeform curved surface: one is the intricate geometry, the other is the hard-to-machining optical materials due to their hardness, brittleness or flexibility. Here scanning electrochemical probe lithography (SECPL) is developed, not only to meet the machining need of intricate geometry by 3D direct writing, but also to overcome the above mentioned mechanical properties by an electrochemical material removal mode. Through the electrochemical probe a localized anodic voltage is applied to drive the localized corrosion of GaAs. The material removal rate is obtained as a function of applied voltage, motion rate, scan segment, etc. Based on the material removal function, an arbitrary geometry can be converted to a spatially distributed voltage. Thus, a series of micro-optical element are fabricated with a machining accuracy in the scale of 100 s of nanometers. Notably, the spiral phase plate shows an excellent performance to transfer parallel light to vortex beam. SECPL demonstrates its excellent controllability and accuracy for the ultra-precision machining of micro-optical devices with freeform curved surface, providing an alternative chemical approach besides the physical and mechanical techniques.

Tip-based Lithography with a Sacrificial Layer

The fabrication of a highly controlled gold (Au) nanohole (NH) array via tip-based lithography is improved by incorporating a sacrificial layer-a tip-crash buffer layer. This inclusion mitigates scratches during the nano-indentation process by employing a 300 nm thick poly(methyl methacrylate) layer as a sacrificial layer on top of the Au film. Such a precaution ensures minimal scratches on the Au film, facilitating the creation of sub-50 nm Au NHs with a 15 nm gap between the Au NHs. The precision of this method exceeds that of fabricating Au NHs without a sacrificial layer. Demonstrating its versatility, this Au NH array is utilized in two distinct applications: as a dry etching mask to form a molybdenum disulfide hole array and as a catalyst in metal-assisted chemical etching, resulting in conical-shaped silicon nanostructures. Additionally, a significant electric field is generated when Au nanoparticles (NPs) are placed within the Au NHs. This effect arises from coupling electromagnetic waves, concentrated by the Au NHs and amplified by the Au NPs. A notable result of this configuration is the enhancement factor of surface-enhanced Raman scattering, which is an order of magnitude greater than that observed with just Au NHs and Au NPs alone.

High-Throughput Direct Writing of Metallic Micro- and Nano-Structures by Focused Ga+ Beam Irradiation of Palladium Acetate Films

Metallic nanopatterns are ubiquitous in applications that exploit the electrical conduction at the nanoscale, including interconnects, electrical nanocontacts, and small gaps between metallic pads. These metallic nanopatterns can be designed to show additional physical properties (optical transparency, plasmonic effects, ferromagnetism, superconductivity, heat evacuation, etc.). For these reasons, an intense search for novel lithography methods using uncomplicated processes represents a key on-going issue in the achievement of metallic nanopatterns with high resolution and high throughput. In this contribution, we introduce a simple methodology for the efficient decomposition of Pd3(OAc)6 spin-coated thin films by means of a focused Ga+ beam, which results in metallic-enriched Pd nanostructures. Remarkably, the usage of a charge dose as low as 30 μC/cm2 is sufficient to fabricate structures with a metallic Pd content above 50% (at.) exhibiting low electrical resistivity (70 μΩ·cm). Binary-collision-approximation simulations provide theoretical support to this experimental finding. Such notable behavior is used to provide three proof-of-concept applications: (i) creation of electrical contacts to nanowires, (ii) fabrication of small (40 nm) gaps between large metallic contact pads, and (iii) fabrication of large-area metallic meshes. The impact across several fields of the direct decomposition of spin-coated organometallic films by focused ion beams is discussed.

Direct Chemisorption-Assisted Nanotransfer Printing with Wafer-Scale Uniformity and Controllability

Nanotransfer printing techniques have attracted significant attention due to their outstanding simplicity, cost-effectiveness, and high throughput. However, conventional methods via a chemical medium hamper the efficient fabrication with large-area uniformity and rapid development of electronic and photonic devices. Herein, we report a direct chemisorption-assisted nanotransfer printing technique based on the nanoscale lower melting effect, which is an enabling technology for two- or three-dimensional nanostructures with feature sizes ranging from tens of nanometers up to a 6 in. wafer-scale. The method solves the major bottleneck (large-scale uniform metal catalysts with nanopatterns) encountered by metal-assisted chemical etching. It also achieves wafer-scale, uniform, and controllable nanostructures with extremely high aspect ratios. We further demonstrate excellent uniformity and high performance of the resultant devices by fabricating 100 photodetectors on a 6 in. Si wafer. Therefore, our method can create a viable route for next-generation, wafer-scale, uniformly ordered, and controllable nanofabrication, leading to significant advances in various applications, such as energy harvesting, quantum, electronic, and photonic devices.

Orthogonal Images Concealed Within a Responsive 6-Dimensional Hypersurface

A photochemical printer, equipped with a digital micromirror device (DMD), leads to the rapid elucidation of the kinetics of the surface-initiated atom-transfer radical photopolymerization of N,N-dimethylacrylamide (DMA) and N-isopropylacrylamide (NIPAM) monomers. This effort reveals conditions where polymer brushes of identical heights can be grown from each monomer. With these data, hidden images are created that appear upon heating the substrate above the lower critical solution temperature (LCST) of polyNIPAM. By introducing a third monomer, methacryloxyethyl thiocarbamoyl rhodamine B, a second, orthogonal image appears upon UV-irradiation. With these studies, it is shown how a new photochemical printer accelerates discovery, creates arbitrary patterns, and addresses long-standing problems in brush polymer and surface chemistry. With this technology in hand a new method is demonstrated to encrypt data within hypersurfaces.

Mass Fabrication of 3D Silicon Nano-/Microstructures by Fab-Free Process Using Tip-Based Lithography

Methods for the mass fabrication of 3D silicon (Si) microstructures with a 100 nm resolution are developed using scanning probe lithography (SPL) combined with metal-assisted chemical etching (MACE). Protruding Si structures, including Si nanowires of over 10 µm in length and atypical shaped Si nano- and micropillars, are obtained via the MACE of a patterned gold film (negative tone) on Si substrates by dip-pen nanolithography (DPN) with polymer or by nanoshaving alkanethiol self-assembled monolayers (SAMs). Furthermore, recessed Si structures with arbitrary patterning and channels less than 160 nm wide and hundreds of nanometers in depth are obtained via the MACE of a patterned gold film (positive tone) on Si substrates by alkanethiol DPN. As an example of applications using protruded Si structures, nanoimprinting in an area of up to a centimeter is demonstrated through 1D and 2D SPL combined with MACE. Similarly, submicrometer polydimethylsiloxane (PDMS) stamps are employed over millimeter-scale areas for applications using recessed Si structures. In particular, the mass production of arbitrarily shaped Si microparticles at submicrometer resolution is developed using silicon-on-insulator substrates, as demonstrated using optical microresonators, surface-enhanced Raman scattering templates, and smart microparticles for fluorescence signal coding.

Local Deformation-Controlled Fast Directional Metal Outflow in Metal/Ceramic Nanolayer Sandwiches upon Low Temperature Annealing

Precise nanoindentation on AlN/Cu/AlN nanolayer sandwiches has been conducted by using an atomic force microscope to promote fast and directional metal (Cu) outflow upon heating at low temperatures. Local plastic deformation during indentation results in the generation of high defect densities and stress gradients, which not only effectively reduce the activation energies for fast in-plane diffusion but also direct the in-plane transport of confined Cu to the indent location. In addition, a steep chemical potential gradient of O will be established across the AlN barrier upon exposure to air, which drives fast outward diffusion of Cu along defective pathways in the top AlN layer at the indent location. Selective and fast Cu metal outflow can thus be achieved at the indent locations upon annealing at a relatively low temperature of 350 °C for 5 min in air. The microstructures and phase boundaries of the AlN barrier and confined Cu nanolayers are unperturbed outside the plastically deformed region and remain metastable after annealing at 350 °C. By changing the surface processing modes, patterned nanoparticles and isolated nanowire structures can be fabricated straightforwardly. Such local deformation-controlled directional mass transport phenomena can be utilized to manipulate materials down to the atomic scale for designing functional nanoarchitectures for nanophotonic and nanoelectronic applications.

Development of Dip-Pen Nanolithography (DPN) and Its Derivatives

Dip-pen nanolithography (DPN) is a unique nanofabrication tool that can directly write a variety of molecular patterns on a surface with high resolution and excellent registration. Over the past 20 years, DPN has experienced a tremendous evolution in terms of applicable inks, a remarkable improvement in fabrication throughput, and the development of various derivative technologies. Among these developments, polymer pen lithography (PPL) is the most prominent one that provides a large-scale, high-throughput, low-cost tool for nanofabrication, which significantly extends DPN and beyond. These developments not only expand the scope of the wide field of scanning probe lithography, but also enable DPN and PPL as general approaches for the fabrication or study of nanostructures and nanomaterials. In this review, a focused summary and historical perspective of the technological development of DPN and its derivatives, with a focus on PPL, in one timeline, are provided and future opportunities for technological exploration in this field are proposed.