Large-Area Synthesis of Layered HfS2(1- x )Se2 x Alloys with Fully Tunable Chemical Compositions and Bandgaps

2D Free-Standing GeS1-xSex with Composition-Tunable Bandgap for Tailored Polarimetric Optoelectronics

Germanium-based monochalcogenides (i.e., GeS and GeSe) with desirable properties are promising candidates for the development of next-generation optoelectronic devices. However, they are still stuck with challenges, such as relatively fixed electronic band structure, unconfigurable optoelectronic characteristics, and difficulty in achieving free-standing growth. Herein, it is demonstrated that two-dimensional (2D) free-standing GeS1-xSex (0 ≤ x ≤ 1) nanoplates can be grown by low-pressure rapid physical vapor deposition (LPRPVD), fulfilling a continuously composition-tunable optical bandgap and electronic band structure. By leveraging the synergistic effect of composition-dependent modulation and free-standing growth, GeS1-xSex-based optoelectronic devices exhibit significantly configurable hole mobility from 6.22 × 10-4 to 1.24 cm2V-1s⁻1 and tunable responsivity from 8.6 to 311 A W-1 (635 nm), as x varies from 0 to 1. Furthermore, the polarimetric sensitivity can be tailored from 4.3 (GeS0.29Se0.71) to 1.8 (GeSe) benefiting from alloy engineering. Finally, the tailored imaging capability is also demonstrated to show the application potential of GeS1-xSex alloy nanoplates. This work broadens the functionality of conventional binary materials and motivates the development of tailored polarimetric optoelectronic devices.

Atomically Substitutional Engineering of Transition Metal Dichalcogenide Layers for Enhancing Tailored Properties and Superior Applications

Transition metal dichalcogenides (TMDs) are a promising class of layered materials in the post-graphene era, with extensive research attention due to their diverse alternative elements and fascinating semiconductor behavior. Binary MX2 layers with different metal and/or chalcogen elements have similar structural parameters but varied optoelectronic properties, providing opportunities for atomically substitutional engineering via partial alteration of metal or/and chalcogenide atoms to produce ternary or quaternary TMDs. The resulting multinary TMD layers still maintain structural integrity and homogeneity while achieving tunable (opto)electronic properties across a full range of composition with arbitrary ratios of introduced metal or chalcogen to original counterparts (0-100%). Atomic substitution in TMD layers offers new adjustable degrees of freedom for tailoring crystal phase, band alignment/structure, carrier density, and surface reactive activity, enabling novel and promising applications. This review comprehensively elaborates on atomically substitutional engineering in TMD layers, including theoretical foundations, synthetic strategies, tailored properties, and superior applications. The emerging type of ternary TMDs, Janus TMDs, is presented specifically to highlight their typical compounds, fabrication methods, and potential applications. Finally, opportunities and challenges for further development of multinary TMDs are envisioned to expedite the evolution of this pivotal field.

Broadband high-performance vertical WS1.08Se0.92/Si heterojunction photodetector with MXene electrode

Vertical semiconductor van der Waals heterojunctions are essential for fabricating high-performance photodetectors. However, the range of the spectral response and defect states of semiconductor materials are two critical factors affecting the performance of photodetectors. In this work, the spectral response range of WS2was changed through WS2band gap regulation, and a self-powered vertical WS1.08Se0.92/Si heterojunction photodetector with MXene electrode was prepared by synthesizing WS1.08Se0.92film on Si substrate and vertically stacking Ti3C2TxMXene on the film. Due to the electron collection of MXene and the wonderful junction quality of WS1.08Se0.92/Si, the photodetector can detect near-infrared light in the range of 980-1310 nm, which exceed the detection limit of WS1.08Se0.92. And the device had high sensitivity in the broadband. The responsivity was 4.58 A W-1, the specific detectivity was 4.58 × 1011Jones, the on/off ratio was 4.95 × 103, and the fast response time was 9.81/9.03μs. These properties are superior to previously reported WS2-based photodetectors. Vertical structure, Energy band tuning, and MXene electrode provide a new idea for preparing broadband high-performance and self-powered photodetector.

Hydrogels as promising platforms for engineered living bacteria-mediated therapeutic systems

The idea of using engineered bacteria as prospective living therapeutic agents for the treatment of different diseases has been raised. Nevertheless, the development of safe and effective treatment strategies remains essential to the success of living bacteria-mediated therapy. Hydrogels have presented great promise for the delivery of living bacterial therapeutics due to their tunable physicochemical properties, good bioactivities, and excellent protection of labile payloads. In this review, we summarize the hydrogel design strategies for living bacteria-mediated therapy and review the recent advances in hydrogel-based living bacterial agent delivery for the treatment of typical diseases, including those for digestive health, skin fungal infections, wound healing, vaccines, and cancer, and discuss the current challenges and future perspectives of these strategies in the field. It is believed that the importance of hydrogel-based living bacteria-mediated therapy is expected to further increase with the development of both synthetic biology and biomaterials science in the future.

Temperature-Dependent Absorption of Ternary HfS2-xSex 2D Layered Semiconductors

In this study, we present the investigation of optical properties on a series of HfS_2-xSe_x crystals with different Se compositions x changing from 0 to 2. We used the chemical-vapor transport method to grow these layered ternary compound semiconductors in bulk form. Their lattice constants and crystal properties were characterized by X-ray diffraction, high-resolution transmission electron microscopy, and Raman spectroscopy. We have performed absorption spectroscopies to determine their optical band-gap energies, which started from 2.012 eV with x = 0, and gradually shifts to 1.219 eV for x = 2. Furthermore, we measured the absorption spectroscopies at different temperatures in the range of 20-300 K to identify the temperature dependence of band-gap energies. The band-gap energies of HfS_2-xSe_x were determined from the linear extrapolation method. We have noticed that the band-gap energy may be continuously tuned to the required energy by manipulating the ratio of S and Se. The parameters that describe the temperature influence on the band-gap energy are evaluated and discussed.

Modulated nanowire scaffold for highly efficient differentiation of mesenchymal stem cells

Background

Nanotopographical cues play a critical role as drivers of mesenchymal stem cell differentiation. Nanowire scaffolds, in this regard, provide unique and adaptable nanostructured surfaces with focal points for adhesion and with elastic properties determined by nanowire stiffness.

Results

We show that a scaffold of nanowires, which are remotely actuated by a magnetic field, mechanically stimulates mesenchymal stem cells. Osteopontin, a marker of osteogenesis onset, was expressed after cells were cultured for 1 week on top of the scaffold. Applying a magnetic field significantly boosted differentiation due to mechanical stimulation of the cells by the active deflection of the nanowire tips. The onset of differentiation was reduced to 2 days of culture based on the upregulation of several osteogenesis markers. Moreover, this was observed in the absence of any external differentiation factors.

Conclusions

The magneto-mechanically modulated nanosurface enhanced the osteogenic differentiation capabilities of mesenchymal stem cells, and it provides a customizable tool for stem cell research and tissue engineering.

Graphical Abstract

Supplementary Information

The online version contains supplementary material available at 10.1186/s12951-022-01488-5.

First principles study on structural, electronic and optical properties of HfS2(1-x)Se2x and ZrS2(1-x)Se2x ternary alloys

Alloying 2D transition metal dichalcogenides (TMDs) with dopants to achieve ternary alloys is as an efficient and scalable solution for tuning the electronic and optical properties of two-dimensional materials. This study provides a comprehensive study on the electronic and optical properties of ternary HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) [0 ≤ x ≤ 1] alloys, by employing density functional theory calculations along with random phase approximation. Phonon dispersions were also obtained by using density functional perturbation theory. The results indicate that both of the studied ternary families are stable and the increase of Selenium concentration in HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) alloys results in a linear decrease of the electronic bandgap from 2.15 (ev) to 1.40 (ev) for HfS_2(1−x)Se_2(x) and 1.94 (ev) to 1.23 (ev) for ZrS_2(1−x)Se_2(x) based on the HSE06 functional. Increasing the Se concentration in the ternary alloys results in a red shift of the optical absorption spectra such that the main absorption peaks of HfS_2(1−x)Se_2(x) and ZrS_2(1−x)Se_2(x) cover a broad visible range from 3.153 to 2.607 eV and 2.405 to 1.908 eV, respectively. The studied materials appear to be excellent base materials for tunable electronic and optoelectronic devices in the visible range.

Adding Selenium to HfS₂ and ZrS₂ two-dimensional materials allows tuning the optical properties in a wide visible spectrum that can be used in various electronic and optical applications, including solar cells.

Transition Metal Dichalcogenides [MX2] in Photocatalytic Water Splitting

The quest for a clean, renewable and sustainable energy future has been highly sought for by the scientific community over the last four decades. Photocatalytic water splitting is a very promising technology to proffer a solution to present day environmental pollution and energy crises by generating hydrogen fuel through a “green route” without environmental pollution. Transition metal dichalcogenides (TMDCs) have outstanding properties which make them show great potential as effective co-catalysts with photocatalytic materials such as TiO2, ZnO and CdS for photocatalytic water splitting. Integration of TMDCs with a photocatalyst such as TiO2 provides novel nanohybrid composite materials with outstanding characteristics. In this review, we present the current state of research in the application of TMDCs in photocatalytic water splitting. Three main aspects which consider their properties, advances in the synthesis routes of layered TMDCs and their composites as well as their photocatalytic performances in the water splitting reaction are discussed. Finally, we raise some challenges and perspectives in their future application as materials for water-splitting photocatalysts.

Emerging Phases of Layered Metal Chalcogenides

Layered metal chalcogenides, as a "rich" family of 2D materials, have attracted increasing research interest due to the abundant choices of materials with diverse structures and rich electronic characteristics. Although the common metal chalcogenide phases such as 2H and 1T have been intensively studied, many other unusual phases are rarely explored, and some of these show fascinating behaviors including superconductivity, ferroelectrics, ferromagnetism, etc. From this perspective, the unusual phases of metal chalcogenides and their characteristics, as well as potential applications are introduced. First, the unusual phases of metal chalcogenides from different classes, including transition metal dichalcogenides, magnetic element-based chalcogenides, and metal phosphorus chalcogenides, are discussed, respectively. Meanwhile, their excellent properties of different unusual phases are introduced. Then, the methods for producing the unusual phases are discussed, specifically, the stabilization strategies during the chemical vapor deposition process for the unusual phase growth are discussed, followed by an outlook and discussions on how to prepare the unusual phase metal dichalcogenides in terms of synthetic methodology and potential applications.

Electronic Properties and Carrier Dynamics at the Alloy Interfaces of WS2x Se2-2x Spiral Nanosheets

Electronic properties at the interfaces between different-composition domains of 2D-alloys are key for their optical, electronic, and optoelectronic applications. Understanding the interfacial electronic structures and carrier dynamics is essential for designing and fabricating devices that use these alloys. Here, WS_2x Se_2-2x spiral nanosheets are prepared using the physical vapor deposition method, and the nonlinear optical and electronic properties, as well as the carrier dynamics at the interfaces between the WS and WSe domains, are studied. Second-harmonic generation tests demonstrate that these nanosheets exhibit a very strong layer-dependent nonlinear optical effect. Atomic-resolution scanning tunneling microscopy (STM) and spectroscopy (STS) measurements reveal that S and Se atoms are non-uniformly distributed, forming WS domains, WSe domains, and defect-related areas. Atomic STM images and STS maps reveal enhanced local density of states by electron scattering at the WS/WSe interfaces, providing a detailed nanoscale interpretation of the S/Se-ratio-dependent lifetimes observed in pump-probe spectroscopy measurements. This work provides valuable interfacial characterization of 2D-alloy materials, using state-of-the-art methods with high temporal and spatial resolutions. The obtained insights are likely to be useful for prospective applications.

Optoelectronic Properties of Atomically Thin MoxW(1-x)S2 Nanoflakes Probed by Spatially-Resolved Monochromated EELS

Band gap engineering of atomically thin two-dimensional (2D) materials has attracted a huge amount of interest as a key aspect to the application of these materials in nanooptoelectronics and nanophotonics. Low-loss electron energy loss spectroscopy has been employed to perform a direct measurement of the band gap in atomically thin MoxW(1-x)S2 nanoflakes. The results show a bowing effect with the alloying degree, which fits previous studies focused on excitonic transitions. Additional properties regarding the Van Hove singularities in the density of states of these materials, as well as high energy excitonic transition, have been analysed as well.

Controllable Thin-Film Approaches for Doping and Alloying Transition Metal Dichalcogenides Monolayers

Two-dimensional (2D) transition metal dichalcogenides (TMDs) exhibit exciting properties and versatile material chemistry that are promising for device miniaturization, energy, quantum information science, and optoelectronics. Their outstanding structural stability permits the introduction of various foreign dopants that can modulate their optical and electronic properties and induce phase transitions, thereby adding new functionalities such as magnetism, ferroelectricity, and quantum states. To accelerate their technological readiness, it is essential to develop controllable synthesis and processing techniques to precisely engineer the compositions and phases of 2D TMDs. While most reviews emphasize properties and applications of doped TMDs, here, recent progress on thin-film synthesis and processing techniques that show excellent controllability for substitutional doping of 2D TMDs are reported. These techniques are categorized into bottom-up methods that grow doped samples on substrates directly and top-down methods that use energetic sources to implant dopants into existing 2D crystals. The doped and alloyed variants from Group VI TMDs will be at the center of technical discussions, as they are expected to play essential roles in next-generation optoelectronic applications. Theoretical backgrounds based on first principles calculations will precede the technical discussions to help the reader understand each element's likelihood of substitutional doping and the expected impact on the material properties.

Temperature Dependent Excitonic Transition Energy and Enhanced Electron-Phonon Coupling in Layered Ternary SnS2-xSex Semiconductors with Fully Tunable Stoichiometry

In this study, a series of SnS_2-xSe_x (0 ≤ x ≤ 2) layered semiconductors were grown by the chemical–vapor transport method. The crystal structural and material phase of SnS_2-xSe_x layered van der Waals crystals was characterized by X-ray diffraction measurements and Raman spectroscopy. The temperature dependence of the spectral features in the vicinity of the direct band edge excitonic transitions of the layered SnS_2-xSe_x compounds was measured in the temperature range of 20–300 K using the piezoreflectance (PzR) technique. The near band-edge excitonic transition energies of SnS_2-xSe_x were determined from a detailed line-shape fit of the PzR spectra. The PzR characterization has shown that the excitonic transitions were continuously tunable with the ratio of S and Se. The parameters that describe the temperature variation of the energies of the excitonic transitions are evaluated and discussed.

Lattice-Strain Engineering of Homogeneous NiS0.5 Se0.5 Core-Shell Nanostructure as a Highly Efficient and Robust Electrocatalyst for Overall Water Splitting

Developing highly-efficient non-noble-metal electrocatalysts for water splitting is crucial for the development of clean and reversible hydrogen energy. Introducing lattice strain is an effective strategy to develop efficient electrocatalysts. However, lattice strain is typically co-created with heterostructure, vacancy, or substrate effects, which complicate the identification of the strain-activity correlation. Herein, a series of lattice-strained homogeneous NiS_x Se_{1- x} nanosheets@nanorods hybrids are designed and synthesized by a facile strategy. The NiS_0.5 Se_0.5 with ≈2.7% lattice strain exhibits outstanding activity for hydrogen and oxygen evolution reaction (HER/OER), affording low overpotentials of 70 and 257 mV at 10 mA cm^-2 , respectively, as well as excellent long-term durability even at a large current density of 100 mA cm^-2 (300 h), significantly superior to other benchmarks and the precious metal catalysts. Experimental and theoretical calculation results reveal that the generated lattice strain decreases the metal d-orbital overlap, leading to a narrower bandwidth and a closer d-band center toward the Fermi level. Thus, NiS_0.5 Se_0.5 possesses favorable H* adsorption kinetics for HER and lower energy barriers for OER. This work provides a new insight to regulate the lattice strain of advanced catalyst materials and further improve the performance of energy conversion technologies.

Molecular Beam Epitaxy of Two-Dimensional Vanadium-Molybdenum Diselenide Alloys

Two-dimensional (2D) alloys represent a versatile platform that extends the properties of atomically thin transition-metal dichalcogenides. Here, using molecular beam epitaxy, we investigate the growth of 2D vanadium-molybdenum diselenide alloys, V_xMo_1-xSe₂, on highly oriented pyrolytic graphite and unveil their structural, chemical, and electronic integrities via measurements by scanning tunneling microscopy/spectroscopy, synchrotron X-ray photoemission, and X-ray absorption spectroscopy (XAS). Essentially, we found a critical value of x = ∼0.44, below which phase separation occurs and above which a homogeneous metallic phase is favored. Another observation is an effective increase in the density of mirror twin boundaries of constituting MoSe₂ in the low V concentration regime (x ≤ 0.05). Density functional theory calculations support our experimental results on the thermal stability of 2D V_xMo_1-xSe₂ alloys and suggest an H phase of the homogeneous alloys with alternating parallel V and Mo strips randomly in-plane stacked. Element-specific XAS of the 2D alloys, which clearly indicates quenched atomic multiplets similar to the case of 2H-VSe₂, provides strong evidence for the H phase of the 2D alloys. This work provides a comprehensive understanding of the thermal stability, chemical state, and electronic structure of 2D V_xMo_1-xSe₂ alloys, useful for the future design of 2D electronic devices.

Controlling the electronic and optical properties of HfS2 mono-layers via lanthanide substitutional doping: a DFT+U study

Two dimensional HfS₂ is a material with potential applications in the field of photo-catalysis and advanced solid state devices. Density functional theory with the Hubbard U parameter (DFT+U) calculations were carried out to investigate the structural, electronic and optical properties of lanthanide dopant atoms (LN = La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu) in the HfS₂ mono-layer. The calculated electronic band gap for a pristine HfS₂ mono-layer is 1.30 eV with a non-magnetic ground state. The dopant substitutional energies under both Hf-rich and S-rich conditions were evaluated, with the S-rich condition for the dopant atoms being negative. This implies that the incorporation of these LN dopant atoms in the HfS₂ is feasible and experimental realization possible. The introduction of LN dopant atoms in the HfS₂ mono-layer resulted in a significant change of the material properties. We found that the presence of LN dopant atoms in the HfS₂ mono-layer significantly alters its electronic ground states by introducing defect states as well as changes in the overall density of states profile resulting in a metallic ground state for the doped mono-layers. The doped mono-layers are all magnetic with the exception of La and Lu dopant atoms. We found that LN dopant atoms in the HfS₂ mono-layer influence the absorption and reflectivity spectra with the introduction of states in the lower frequency range (<1.30 eV). Furthermore, we showed that the applicability of doped HfS₂ mono-layers as photo-catalysts is very different compared with the pristine HfS₂ mono-layer.

Density functional theory with the Hubbard U parameter calculations were carried out to investigate the structural, electronic and optical properties of lanthanide dopant atoms in the HfS₂ mono-layer..

Synthesis of low-symmetry 2D Ge(1-x)SnxSe2 alloy flakes with anisotropic optical response and birefringence

Low-symmetry two-dimensional (2D) materials with unique in-plane anisotropy can promote both fundamental science and practical applications in optics, optoelectronics, electronics, and polarization detection. As a member of 2D materials, doping/alloying material systems have gained great attention owing to the tunable bandgap and special properties. However, the in-plane anisotropic optical and electrical properties of these 2D alloy materials have rarely been reported. In this work, low-symmetry 2D Ge_(1-x)Sn_xSe₂ (x = 0-1.0) alloy flakes have been synthesized by chemical vapor deposition (CVD) with a bandgap varying from 1.55 eV (GeSe₂, x = 0) to 1.90 eV (SnSe₂, x = 1.0). Angle-resolved polarized Raman spectroscopy (ARPRS) is used to confirm the in-plane vibrational anisotropy, and azimuth-dependent reflectance difference microscopy (ADRDM) is applied to visualize the in-plane optical anisotropy. Polarization-dependent transmission spectroscopy (PDTS) is carried out to reflect the in-plane absorptional anisotropy and linear dichroism, and birefringence characteristics are also found in the subsequent studies. All of the results indicate the unique in-plane optical anisotropy and birefringence characteristics of the 2D Ge_(1-x)Sn_xSe₂ alloy flakes, providing new opportunities for polarization-controlled devices, optical wave plates, and polarizers.

Precise Vapor-Phase Synthesis of Two-Dimensional Atomic Single Crystals

Two-dimensional atomic single crystals (2DASCs) have drawn immense attention because of their potential for fundamental research and new technologies. Novel properties of 2DASCs are closely related to their atomic structures, and effective modulation of the structures allows for exploring various practical applications. Precise vapor-phase synthesis of 2DASCs with tunable thickness, selectable phase, and controllable chemical composition can be realized to adjust their band structures and electronic properties. This review highlights the latest advances in the precise vapor-phase synthesis of 2DASCs. We thoroughly elaborate on strategies toward the accurate control of layer number, phase, chemical composition of layered 2DASCs, and thickness of non-layered 2DASCs. Finally, we suggest forward-looking solutions to the challenges and directions of future developments in this emerging field.