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Jang H, Toriyama MY, Abbey S, Frimpong B, Snyder GJ, Jung YS, Oh M. Suppressed Lone Pair Electrons Explain Unconventional Rise of Lattice Thermal Conductivity in Defective Crystalline Solids. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2308075. [PMID: 38626376 PMCID: PMC11200014 DOI: 10.1002/advs.202308075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/25/2023] [Revised: 12/09/2023] [Indexed: 04/18/2024]
Abstract
Manipulating thermal properties of materials can be interpreted as the control of how vibrations of atoms (known as phonons) scatter in a crystal lattice. Compared to a perfect crystal, crystalline solids with defects are expected to have shorter phonon mean free paths caused by point defect scattering, leading to lower lattice thermal conductivities than those without defects. While this is true in many cases, alloying can increase the phonon mean free path in the Cd-doped AgSnSbSe3 system to increase the lattice thermal conductivity from 0.65 to 1.05 W m-1 K-1 by replacing 18% of the Sb sites with Cd. It is found that the presence of lone pair electrons leads to the off-centering of cations from the centrosymmetric position of a cubic lattice. X-ray pair distribution function analysis reveals that this structural distortion is relieved when the electronic configuration of the dopant element cannot produce lone pair electrons. Furthermore, a decrease in the Grüneisen parameter with doping is experimentally confirmed, establishing a relationship between the stereochemical activity of lone pair electrons and the lattice anharmonicity. The observed "harmonic" behavior with doping suggests that lone pair electrons must be preserved to effectively suppress phonon transport in these systems.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Michael Y. Toriyama
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Stanley Abbey
- Department of Materials Science and EngineeringHanbat National UniversityYuseong‐guDaejeon34158Republic of Korea
| | - Brakowaa Frimpong
- Department of Materials Science and EngineeringHanbat National UniversityYuseong‐guDaejeon34158Republic of Korea
| | - G. Jeffrey Snyder
- Department of Materials Science and EngineeringNorthwestern UniversityEvanstonIL60208USA
| | - Yeon Sik Jung
- Department of Materials Science and EngineeringKorea Advanced Institute of Science and Technology (KAIST)Daejeon34141Republic of Korea
| | - Min‐Wook Oh
- Department of Materials Science and EngineeringHanbat National UniversityYuseong‐guDaejeon34158Republic of Korea
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2
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Li K, Sun L, Bai W, Ma N, Zhao C, Zhao J, Xiao C, Xie Y. High-Entropy Strategy to Achieve Electronic Band Convergence for High-Performance Thermoelectrics. J Am Chem Soc 2024; 146:14318-14327. [PMID: 38718345 DOI: 10.1021/jacs.4c04048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/14/2024]
Abstract
Multiband convergence has attracted significant interest due to its positive effects on further improving thermoelectric performance. However, the current research mainly focuses on two- or three-band convergence in lead chalcogenides through doping and alloying. Therefore, exploring a new strategy to facilitate more-band convergence has instructive significance and practical value in thermoelectric research. Herein, we first propose a high-entropy strategy to achieve four-band convergence for optimizing thermoelectric performance. Taking high-entropy AgSbPbSnGeTe5 as an example, we found that the emergence of more-band convergence occurs as the configuration entropy increases; in particular, the four-band convergence occurs in high-entropy AgSbPbSnGeTe5. The overlap of multiatom orbitals in the high-entropy sample contributes to the convergence of four valence bands, promoting the improvement of electrical performance. Meanwhile, due to large lattice distortion and disordered atoms, the phonon mean free path is effectively compressed, resulting in low lattice thermal conductivity of high-entropy AgSbPbSnGeTe5. Consequently, AgSbPbSnGeTe5 achieved an intrinsically high ZT value of 1.22 at 673 K, providing a cornerstone for further optimizing thermoelectric performance. For example, by generally optimizing the carrier concentration, a peak ZT value of ∼1.75 at 723 K is achieved. These insights offer a comprehensive understanding of the band structure affected by unique structures of high-entropy materials and also shed useful light on innovation mechanisms and functionalities for future improvement of thermoelectric performance.
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Affiliation(s)
- Kai Li
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Liang Sun
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Wei Bai
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Ni Ma
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Chenxi Zhao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Jiyin Zhao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Chong Xiao
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Yi Xie
- Hefei National Research Center for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
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3
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Zhong J, Yang X, Lyu T, Liang G, Zhang S, Zhang C, Ao W, Liu F, Nan P, Ge B, Hu L. Nuanced dilute doping strategy enables high-performance GeTe thermoelectrics. Sci Bull (Beijing) 2024; 69:1037-1049. [PMID: 38431467 DOI: 10.1016/j.scib.2024.02.015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/14/2023] [Revised: 01/15/2024] [Accepted: 02/02/2024] [Indexed: 03/05/2024]
Abstract
In thermoelectrics, doping is essential to augment the figure of merit. Traditional strategy, predominantly heavy doping, aims to optimize carrier concentration and restrain lattice thermal conductivity. However, this tactic can severely hamper carrier transport due to pronounced point defect scattering, particularly in materials with inherently low carrier mean-free-path. Conversely, dilute doping, although minimally affecting carrier mobility, frequently fails to optimize other vital thermoelectric parameters. Herein, we present a more nuanced dilute doping strategy in GeTe, leveraging the multifaceted roles of small-size metal atoms. A mere 4% CuPbSbTe3 introduction into GeTe swiftly suppresses rhombohedral distortion and optimizes carrier concentration through the aid of Cu interstitials. Additionally, the formation of multiscale microstructures, including zero-dimensional Cu interstitials, one-dimensional dislocations, two-dimensional planar defects, and three-dimensional nanoscale amorphous GeO2 and Cu2GeTe3 precipitates, along with the ensuing lattice softening, contributes to an ultralow lattice thermal conductivity. Intriguingly, dilute CuPbSbTe3 doping incurs only a marginal decrease in carrier mobility. Subsequent trace Cd doping, employed to alleviate the bipolar effect and align the valence bands, yields an impressive figure-of-merit of 2.03 at 623 K in (Ge0.97Cd0.03Te)0.96(CuPbSbTe3)0.04. This leads to a high energy-conversion efficiency of 7.9% and a significant power density of 3.44 W cm-2 at a temperature difference of 500 K. These results underscore the invaluable insights gained into the constructive role of nuanced dilute doping in the concurrent tuning of carrier and phonon transport in GeTe and other thermoelectric materials.
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Affiliation(s)
- Jinxuan Zhong
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Xiaoyu Yang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Tu Lyu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Gege Liang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Shengnan Zhang
- Superconducting Materials Research Center, Northwest Institute for Nonferrous Metal Research, Xi'an 710016, China
| | - Chaohua Zhang
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Weiqin Ao
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Fusheng Liu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China
| | - Pengfei Nan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China.
| | - Binghui Ge
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Key Laboratory of Structure and Functional Regulation of Hybrid Materials of Ministry of Education, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, China
| | - Lipeng Hu
- College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Guangdong Research Center for Interfacial Engineering of Functional Materials, Guangdong Provincial Key Laboratory of Deep Earth Sciences and Geothermal Energy Exploitation and Utilization, Institute of Deep Earth Sciences and Green Energy, Shenzhen University, Shenzhen 518060, China.
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4
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Liu P, Zhao Y, Wang X, Ni J, Dai Z. Study on lattice dynamics and thermal conductivity of fluorite AF 2 (A = Ca, Sr, Ba) based on first principles calculations. Phys Chem Chem Phys 2024; 26:10868-10879. [PMID: 38525602 DOI: 10.1039/d4cp00201f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
Fluorite materials have received particular attention in electron optics due to their favorable optical properties. However, further exploration of these materials in the thermoelectric (TE) field is hampered by the lack of studies on their lattice thermal transport properties. In this work, we use first-principles calculations, combined with self-consistent phonon theory, compressive sensing lattice dynamics and the Boltzmann transport equation, to study the microscopic mechanism of lattice thermal transport properties in AF2 (A = Ca, Sr, Ba) with a fluorite structure. We investigate the effects of three-phonon and four-phonon scattering and quartic anharmonic renormalization of phonon frequencies on this system. The results show that the bonding strength of atoms A (Ca, Sr, and Ba) plays an important role in the thermal transport process, and the third-order anharmonicity also plays an important role in this system. Meanwhile, the role of the quartic anharmonicity cannot be ignored. Our findings not only fill in the gaps in the study of lattice thermal transport of fluorite materials, but also deepen the comprehensive understanding of the high κL value of fluorite materials.
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Affiliation(s)
- Peipei Liu
- Department of Physics, Yantai University, Yantai 264005, People's Republic of China.
| | - Yinchang Zhao
- Department of Physics, Yantai University, Yantai 264005, People's Republic of China.
| | - Xichang Wang
- Department of Physics, Yantai University, Yantai 264005, People's Republic of China.
| | - Jun Ni
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
- Frontier Science Center for Quantum Information, Beijing 100084, People's Republic of China
| | - Zhenhong Dai
- Department of Physics, Yantai University, Yantai 264005, People's Republic of China.
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5
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Liu Z, Guo Z, Deng L. Preparation of High-Performance Mn-Doped SnTe Materials at High Pressure and High Temperature. Inorg Chem 2024; 63:5389-5399. [PMID: 38478976 DOI: 10.1021/acs.inorgchem.3c03991] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/26/2024]
Abstract
SnTe is an environmentally friendly medium-temperature thermoelectric material, but its inherent low power factor (PF) and high lattice thermal conductivity severely limit its application. In this study, based on the fact that Mn doping can induce band convergence, the high-pressure and high-temperature (HPHT) synthesis method was used to optimize the sample preparation and shorten the synthesis cycle to 30 min. The results show that the Sn0.93Mn0.10Te sample achieves the maximum PF value of 34.00 μW cm-1 K-2 at 775 K and PFave value of 21.36 μW cm-1 K-2 between 300-875 K. Microstructure analysis shows that the high-pressure synthesis method introduces abundant grain boundaries, various grain sizes, multiple defects, and pore structures into the sample. These microscopic crystal structures can effectively scatter phonons and lower the lattice thermal conductivity. The modification of these micromorphologies results in the Sn0.92Mn0.11Te sample attaining a minimum lattice thermal conductivity of 0.45 W m-1 K-1 at 625 K. The thermoelectric figure of merit (zT) of sample Sn0.92Mn0.11Te reaches a maximum value of 1.1 at 775 K, and the zTave reaches 0.63 in the range of 300-875 K. This study indicates that the synergistic effect of Mn element doping and microstructure modification can effectively optimize the thermoelectric transport performance of SnTe materials.
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Affiliation(s)
- Zelin Liu
- Department of Material Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Zhili Guo
- Department of Material Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
| | - Le Deng
- Department of Material Science and Engineering, Changchun University of Science and Technology, Changchun 130022, China
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6
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Zhu J, Ren Q, Chen C, Wang C, Shu M, He M, Zhang C, Le MD, Torri S, Wang CW, Wang J, Cheng Z, Li L, Wang G, Jiang Y, Wu M, Qu Z, Tong X, Chen Y, Zhang Q, Ma J. Vacancies tailoring lattice anharmonicity of Zintl-type thermoelectrics. Nat Commun 2024; 15:2618. [PMID: 38521767 PMCID: PMC10960861 DOI: 10.1038/s41467-024-46895-4] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/26/2023] [Accepted: 03/14/2024] [Indexed: 03/25/2024] Open
Abstract
While phonon anharmonicity affects lattice thermal conductivity intrinsically and is difficult to be modified, controllable lattice defects routinely function only by scattering phonons extrinsically. Here, through a comprehensive study of crystal structure and lattice dynamics of Zintl-type Sr(Cu,Ag,Zn)Sb thermoelectric compounds using neutron scattering techniques and theoretical simulations, we show that the role of vacancies in suppressing lattice thermal conductivity could extend beyond defect scattering. The vacancies in Sr2ZnSb2 significantly enhance lattice anharmonicity, causing a giant softening and broadening of the entire phonon spectrum and, together with defect scattering, leading to a ~ 86% decrease in the maximum lattice thermal conductivity compared to SrCuSb. We show that this huge lattice change arises from charge density reconstruction, which undermines both interlayer and intralayer atomic bonding strength in the hierarchical structure. These microscopic insights demonstrate a promise of artificially tailoring phonon anharmonicity through lattice defect engineering to manipulate lattice thermal conductivity in the design of energy conversion materials.
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Affiliation(s)
- Jinfeng Zhu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Qingyong Ren
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China.
- Spallation Neutron Source Science Center, Dongguan, China.
- Guangdong Provincial Key Laboratory of Extreme Conditions, Dongguan, China.
| | - Chen Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China
- School of Physical Sciences, Great Bay University, Dongguan, Guangdong, China
| | - Chen Wang
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR, China
| | - Mingfang Shu
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Miao He
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, CAS Key Laboratory of Photovoltaic and Energy Conservation Materials, High Magnetic Field Laboratory of Chinese Academy of Sciences (CHMFL), HFIPS, CAS, Hefei, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Cuiping Zhang
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Manh Duc Le
- ISIS Neutron and Muon Source, Rutherford Appleton Laboratory, Chilton, Didcot, Oxon, England, UK
| | - Shuki Torri
- Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tokai, Ibaraki, Japan
| | - Chin-Wei Wang
- Neutron Group, National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Jianli Wang
- College of Physics, Jilin University, Changchun, China
- Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Innovation Campus, North Wollongong, Australia
| | - Zhenxiang Cheng
- Institute for Superconducting and Electronic Materials, Faculty of Engineering and Information Sciences, University of Wollongong, Innovation Campus, North Wollongong, Australia
| | - Lisi Li
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China
- Spallation Neutron Source Science Center, Dongguan, China
- Guangdong Provincial Key Laboratory of Extreme Conditions, Dongguan, China
| | - Guohua Wang
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China
| | - Yuxuan Jiang
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui, China
| | - Mingzai Wu
- School of Physics and Optoelectronics Engineering, Anhui University, Hefei, Anhui, China
| | - Zhe Qu
- Anhui Province Key Laboratory of Low-Energy Quantum Materials and Devices, CAS Key Laboratory of Photovoltaic and Energy Conservation Materials, High Magnetic Field Laboratory of Chinese Academy of Sciences (CHMFL), HFIPS, CAS, Hefei, China
- Science Island Branch of Graduate School, University of Science and Technology of China, Hefei, China
| | - Xin Tong
- Institute of High Energy Physics, Chinese Academy of Sciences, Beijing, China.
- Spallation Neutron Source Science Center, Dongguan, China.
- Guangdong Provincial Key Laboratory of Extreme Conditions, Dongguan, China.
| | - Yue Chen
- Department of Mechanical Engineering, The University of Hong Kong, Hong Kong SAR, China.
| | - Qian Zhang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, China.
- State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin, China.
| | - Jie Ma
- Key Laboratory of Artificial Structures and Quantum Control, School of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai, China.
- Collaborative Innovation Center of Advanced Microstructures, Nanjing, 210093, Jiangsu, China.
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Faka V, Agne MT, Lange MA, Daisenberger D, Wankmiller B, Schwarzmüller S, Huppertz H, Maus O, Helm B, Böger T, Hartel J, Gerdes JM, Molaison JJ, Kieslich G, Hansen MR, Zeier WG. Pressure-Induced Dislocations and Their Influence on Ionic Transport in Li +-Conducting Argyrodites. J Am Chem Soc 2024; 146:1710-1721. [PMID: 38175928 DOI: 10.1021/jacs.3c12323] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2024]
Abstract
The influence of the microstructure on the ionic conductivity and cell performance is a topic of broad scientific interest in solid-state batteries. The current understanding is that interfacial decomposition reactions during cycling induce local strain at the interfaces between solid electrolytes and the anode/cathode, as well as within the electrode composites. Characterizing the effects of internal strain on ion transport is particularly important, given the significant local chemomechanical effects caused by volumetric changes of the active materials during cycling. Here, we show the effects of internal strain on the bulk ionic transport of the argyrodite Li6PS5Br. Internal strain is reproducibly induced by applying pressures with values up to 10 GPa. An internal permanent strain is observed in the material, indicating long-range strain fields typical for dislocations. With increasing dislocation densities, an increase in the lithium ionic conductivity can be observed that extends into improved ionic transport in solid-state battery electrode composites. This work shows the potential of strain engineering as an additional approach for tuning ion conductors without changing the composition of the material itself.
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Affiliation(s)
- Vasiliki Faka
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
| | - Matthias T Agne
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
| | - Martin A Lange
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
| | - Dominik Daisenberger
- Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 ODE, U.K
| | - Björn Wankmiller
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
- Institute of Physical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
- International Graduate School BACCARA, Wilhelm-Schickard-Straße 8, 48149 Münster, Germany
| | - Stefan Schwarzmüller
- Institute of General, Inorganic and Theoretical Chemistry, University of Innsbruck, Innrain 80/82, 6020 Innsbruck, Austria
| | - Hubert Huppertz
- Institute of General, Inorganic and Theoretical Chemistry, University of Innsbruck, Innrain 80/82, 6020 Innsbruck, Austria
| | - Oliver Maus
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
- International Graduate School BACCARA, Wilhelm-Schickard-Straße 8, 48149 Münster, Germany
| | - Bianca Helm
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
| | - Thorben Böger
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
- International Graduate School BACCARA, Wilhelm-Schickard-Straße 8, 48149 Münster, Germany
| | - Johannes Hartel
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
| | - Josef Maximilian Gerdes
- Institute of Physical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
| | - Jamie J Molaison
- Neutron Scattering Division, Institute Oak Ridge National Laboratory (ORNL), Oak Ridge, Tennessee 37831-6473, United States
| | - Gregor Kieslich
- TUM School of Natural Sciences, Department of Chemistry, Technical University of Munich, Lichtenbergstraße 4, 85748 Garching, Germany
| | - Michael Ryan Hansen
- Institute of Physical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
- International Graduate School BACCARA, Wilhelm-Schickard-Straße 8, 48149 Münster, Germany
| | - Wolfgang G Zeier
- Institute of Inorganic and Analytical Chemistry, University of Münster, Corrensstraße 28/30, 48149 Münster, Germany
- International Graduate School BACCARA, Wilhelm-Schickard-Straße 8, 48149 Münster, Germany
- Institut für Energie- und Klimaforschung (IEK), IEK-12: Helmholtz-Institut Münster, Forschungszentrum Jülich, 48149 Münster, Germany
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8
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Bo L, Wang W, Zhu J, Li C, Zuo M, Zhao D. Stepwise Alloying in Liquid-like Solid Solutions to Achieve Crystallographic Distortion for Regulating Thermoelectric Transport Behavior. ACS APPLIED MATERIALS & INTERFACES 2023; 15:54478-54487. [PMID: 37970630 DOI: 10.1021/acsami.3c12294] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/17/2023]
Abstract
With the surge of energy consumption, environmental-protection Cu2-xSe thermoelectric materials are increasingly attracting attention. In this work, multilayered structures are constructed in Cu2-xSe solid solutions by alloying (SnSe)0.75(AgBiSe2)0.25, which strongly scatters full-wavelength phonons by carefully regulating the crystallographic distortion. By using the stepwise alloying strategies, crystallographic distortion and the resultant strain fields presented in microstructure were strengthened markedly, which enhanced the phonon scattering. Meanwhile, by adjusting the coalloying content of Ag, Bi, and Sn elements, the carrier and phonon transports were well decoupled in p-type Cu2-xSe, and the thermoelectric performance was significantly enhanced. By optimized power factor as well as depressed heat transport originating from the moderate coalloying, the maximum zT of 1.23 at 750 K was achieved in Cu1.9Se - 1 wt % (SnSe)0.75(AgBiSe2)0.25. This study indicated that the stepwise alloying strategy was a suitable method for optimizing zT of Cu2-xSe.
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Affiliation(s)
- Lin Bo
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Wenying Wang
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Junliang Zhu
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Changcun Li
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Min Zuo
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Degang Zhao
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
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9
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Jang H, Jung YS, Oh MW. Advances in thermoelectric AgBiSe 2: Properties, strategies, and future challenges. Heliyon 2023; 9:e21117. [PMID: 37928035 PMCID: PMC10623285 DOI: 10.1016/j.heliyon.2023.e21117] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/17/2023] [Revised: 10/04/2023] [Accepted: 10/16/2023] [Indexed: 11/07/2023] Open
Abstract
Thermoelectric materials are attracting considerable attention to alleviate the global energy crisis by enabling the direct conversion of heat into electricity. As a class of I-V-VI2 semiconductors, AgBiSe2 is expected to be the potential thermoelectric material to replace conventional PbTe-based compounds due to its non-toxic and abundant nature of its constituent elements. This review article summarizes the fundamental properties of AgBiSe2, thermoelectric properties, the effect of different dopants on its transport properties and entropy engineering for cubic phase stabilization with the detailed description of related techniques used to analyze the properties of AgBiSe2. The current thermoelectric figure-of-merit and approaches to further improve performance and operational stability are also discussed.
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Affiliation(s)
- Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of Korea
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10
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Ahn Y, Zhang J, Chu Z, Walko DA, Hruszkewycz SO, Fullerton EE, Evans PG, Wen H. Ultrafast Switching of Interfacial Thermal Conductance. ACS NANO 2023; 17:18843-18849. [PMID: 37726260 DOI: 10.1021/acsnano.3c03628] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/21/2023]
Abstract
Dynamical control of thermal transport at the nanoscale provides a time-domain strategy for optimizing thermal management in nanoelectronics, magnetic devices, and thermoelectric devices. However, the rate of change available for thermal switches and regulators is limited to millisecond time scales, calling for a faster modulation speed. Here, time-resolved X-ray diffraction measurements and thermal transport modeling reveal an ultrafast modulation of the interfacial thermal conductance of an FeRh/MgO heterostructure as a result of a structural phase transition driven by optical excitation. Within 90 ps after optical excitation, the interfacial thermal conductance is reduced by a factor of 5 and lasts for a few nanoseconds, in comparison to the value at the equilibrium FeRh/MgO interface. The experimental results combined with thermal transport calculations suggest that the reduced interfacial thermal conductance results from enhanced phonon scattering at the interface where the lattice experiences transient in-plane biaxial stress due to the structural phase transition of FeRh. Our results suggest that optically driven phase transitions can be utilized for ultrafast nanoscale thermal switches for device application.
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Affiliation(s)
- Youngjun Ahn
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Jiawei Zhang
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Zhaodong Chu
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Donald A Walko
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Stephan O Hruszkewycz
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Eric E Fullerton
- Center for Memory and Recording Research, University of California at San Diego, La Jolla, California 92903, United States
| | - Paul G Evans
- Department of Materials Science and Engineering, University of Wisconsin-Madison, Madison, Wisconsin 53706, United States
| | - Haidan Wen
- Advanced Photon Source, Argonne National Laboratory, Lemont, Illinois 60439, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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11
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Hasan S, Adhikari P, San S, Ching WY. Ab initio study of mechanical and thermal properties of GeTe-based and PbSe-based high-entropy chalcogenides. Sci Rep 2023; 13:16218. [PMID: 37758746 PMCID: PMC10533554 DOI: 10.1038/s41598-023-42101-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Accepted: 09/05/2023] [Indexed: 09/29/2023] Open
Abstract
GeTe-based and PbSe-based high-entropy compounds have outstanding thermoelectric (TE) performance and crucial applications in mid and high temperatures. Recently, the optimization of TE performance of high-entropy compounds has been focused on reducing thermal conductivity by strengthening the phonon scattering process to improve TE performance. We report a first-principles investigation on nine GeTe-based high-entropy chalcogenide solid solutions constituted of eight metallic elements (Ag, Pb, Sb, Bi, Cu, Cd, Mn, and Sn) and 13 PbSe-based high-entropy chalcogenide solid solutions: Pb0.99-ySb0.012SnySe1-2xTexSx (x = 0.1, 0.2, 0.25, 0.3, 0.35, 0.4, 0.45, and y = 0) and Pb0.99-ySb0.012SnySe1-2xTexSx (y = 0.05, 0.1, 0.15, 0.2, 0.25 and x = 0.25). We have investigated the mechanical properties focusing on Debye temperature (ΘD), thermal conductivity (κ), Grüneisen parameter (γα), dominant phonon wavelength (λdom), and melting temperature (Tm). We find that the lattice thermal conductivity is significantly reduced when GeTe is alloyed into the following compositions: Ge0.75Sb0.13Pb0.12Te, Ge0.61Ag0.11Sb0.13Pb0.12Bi0.01Te, and Ge0.61Ag0.11Sb0.13Pb0.12Mn0.05Bi0.01Te. This reduction is due to the mass increase and strain fluctuations. The results also show that Ge0.61Ag0.11Sb0.13Pb0.12Bi0.01Te solid solution has the lowest Young's modulus (30.362 GPa), bulk and shear moduli (18.626 and 12.359 GPa), average sound velocity (1653.128 m/sec), Debye temperature (151.689 K), lattice thermal conductivity (0.574 W.m-1.K-1), dominant phonon wavelength (0.692 Å), and melting temperature (535.91 K). Moreover, Ge0.61Ag0.11Sb0.13Pb0.12Bi0.01Te has the highest Grüneisen parameter with a reduced and temperature-independent lattice thermal conductivity. The positive correlation between ΘD and κ is revealed. Alloying of PbSe-based high-entropy by Sb, Sn, Te, and S atoms at the Se and Pb sites resulted in much higher shear strains resulted in the reduction of phonon velocity, a reduced ΘD, and a lower lattice thermal conductivity.
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Affiliation(s)
- Sahib Hasan
- Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, MO, 64110, USA
- Department of Sciences, College of Basic Education, Al Muthanna University, Samawah, 66001, Iraq
| | - Puja Adhikari
- Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, MO, 64110, USA
| | - Saro San
- Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, MO, 64110, USA
| | - Wai-Yim Ching
- Department of Physics and Astronomy, University of Missouri-Kansas City, Kansas City, MO, 64110, USA.
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12
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Isotta E, Jiang S, Moller G, Zevalkink A, Snyder GJ, Balogun O. Microscale Imaging of Thermal Conductivity Suppression at Grain Boundaries. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302777. [PMID: 37310868 DOI: 10.1002/adma.202302777] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2023] [Revised: 05/29/2023] [Indexed: 06/15/2023]
Abstract
Grain-boundary engineering is an effective strategy to tune the thermal conductivity of materials, leading to improved performance in thermoelectric, thermal-barrier coatings, and thermal management applications. Despite the central importance to thermal transport, a clear understanding of how grain boundaries modulate the microscale heat flow is missing, owing to the scarcity of local investigations. Here, thermal imaging of individual grain boundaries is demonstrated in thermoelectric SnTe via spatially resolved frequency-domain thermoreflectance. Measurements with microscale resolution reveal local suppressions in thermal conductivity at grain boundaries. Also, the grain-boundary thermal resistance - extracted by employing a Gibbs excess approach - is found to be correlated with the grain-boundary misorientation angle. Extracting thermal properties, including thermal boundary resistances, from microscale imaging can provide comprehensive understanding of how microstructure affects heat transport, crucially impacting the materials design of high-performance thermal-management and energy-conversion devices.
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Affiliation(s)
- Eleonora Isotta
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Shizhou Jiang
- Department of Mechanical Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Gregory Moller
- Department of Chemical and Biomedical Engineering, FAMU-FSU College of Engineering, Tallahassee, FL, 32310, USA
| | - Alexandra Zevalkink
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, 48824, USA
| | - G Jeffrey Snyder
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Oluwaseyi Balogun
- Department of Mechanical Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Civil and Environmental Engineering, Northwestern University, Evanston, IL, 60208, USA
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13
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Wang H, Feng X, Lu Z, Duan B, Yang H, Wu L, Zhou L, Zhai P, Snyder GJ, Li G, Zhang Q. Synergetic Enhancement of Strength-Ductility and Thermoelectric Properties of Ag 2 Te by Domain Boundaries. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302969. [PMID: 37192421 DOI: 10.1002/adma.202302969] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 12/12/2012] [Indexed: 05/18/2023]
Abstract
Simultaneously improving the mechanical and thermoelectric (TE) properties is significant for the engineering applications of inorganic TE materials. In this work, a novel nanodomain strategy is developed for Ag2 Te compounds to yield 40% and 200% improved compressive strength (160 MPa) and fracture strain (16%) when compared to domain-free samples (115 MPa and 5.5%, respectively). The domained samples also achieve a 45% improvement in average ZT value. The domain boundaries (DBs) provide extra sites for dislocation nucleation while pinning the dislocation movement, resulting in superior strength and ductility. In addition, phonon scattering induced by DBs suppresses the lattice thermal conductivity of Ag2 Te and also reduces the weighted mobility. These findings provide new insights into grain and DB engineering for high-performance inorganic semiconductors with robust mechanical properties.
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Affiliation(s)
- Hongtao Wang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Xiaobin Feng
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Zhongtao Lu
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Bo Duan
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Houjiang Yang
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Luoqi Wu
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Ling Zhou
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
| | - Pengcheng Zhai
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - G Jeffrey Snyder
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Guodong Li
- Hubei Key Laboratory of Theory and Application of Advanced Materials Mechanics, Wuhan University of Technology, Wuhan, 430070, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Qingjie Zhang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
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14
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Parashchuk T, Cherniushok O, Smitiukh O, Marchuk O, Wojciechowski KT. Structure Evolution and Bonding Inhomogeneity toward High Thermoelectric Performance in Cu 2CoSnS 4-xSe x Materials. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2023; 35:4772-4785. [PMID: 37396683 PMCID: PMC10311630 DOI: 10.1021/acs.chemmater.3c00586] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/15/2023] [Revised: 05/22/2023] [Indexed: 07/04/2023]
Abstract
Lightweight diamond-like structure (DLS) materials are excellent candidates for thermoelectric (TE) applications due to their low costs, eco-friendly nature, and property stability. The main obstacles restricting the energy-conversion performance by the lightweight DLS materials are high lattice thermal conductivity and relatively low carrier mobility. By investigating the anion substitution effect on the structural, microstructural, electronic, and thermal properties of Cu2CoSnS4-xSex, we show that the simultaneous enhancement of the crystal symmetry and bonding inhomogeneity engineering are effective approaches to enhance the TE performance in lightweight DLS materials. Particularly, the increase of x in Cu2CoSnS4-xSex makes the DLS structure with the ideal tetrahedral bond angles of 109.5° favorable, leading to better crystal symmetry and higher carrier mobility in samples with higher selenium content. In turn, the phonon transport in the investigated DLS materials is strongly disturbed due to the bonding inhomogeneity between anions and three sorts of cations inducing large lattice anharmonicity. The increase of Se content in Cu2CoSnS4-xSex only intensified this effect resulting in a lower lattice component of the thermal conductivity (κL) for Se-rich samples. As a result of the enhanced power factor S2ρ-1 and the low κL, the dimensionless thermoelectric figure of merit ZT achieves a high value of 0.75 for Cu2CoSnSe4 DLS material. This work demonstrates that crystal symmetry and bonding inhomogeneity play an important role in the transport properties of DLS materials and provide a path for the development of new perspective materials for TE energy conversion.
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Affiliation(s)
- Taras Parashchuk
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
| | - Oleksandr Cherniushok
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
| | - Oleksandr Smitiukh
- Department
of Chemistry and Technology, Volyn National
University, Voli Ave 13, Lutsk 43025, Ukraine
| | - Oleg Marchuk
- Department
of Chemistry and Technology, Volyn National
University, Voli Ave 13, Lutsk 43025, Ukraine
| | - Krzysztof T. Wojciechowski
- Thermoelectric
Research Laboratory, Department of Inorganic Chemistry, Faculty of
Materials Science and Ceramics, AGH University
of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
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15
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Wang W, Bo L, Zhu J, Zhao D. Copper-Based Diamond-like Thermoelectric Compounds: Looking Back and Stepping Forward. MATERIALS (BASEL, SWITZERLAND) 2023; 16:ma16093512. [PMID: 37176394 PMCID: PMC10180055 DOI: 10.3390/ma16093512] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/23/2023] [Revised: 04/13/2023] [Accepted: 05/01/2023] [Indexed: 05/15/2023]
Abstract
The research on thermoelectric (TE) materials has a long history. Holding the advantages of high elemental abundance, lead-free and easily tunable transport properties, copper-based diamond-like (CBDL) thermoelectric compounds have attracted extensive attention from the thermoelectric community. The CBDL compounds contain a large number of representative candidates for thermoelectric applications, such as CuInGa2, Cu2GeSe3, Cu3SbSe4, Cu12SbSe13, etc. In this study, the structure characteristics and TE performances of typical CBDLs were briefly summarized. Several common synthesis technologies and effective strategies to improve the thermoelectric performances of CBDL compounds were introduced. In addition, the latest developments in thermoelectric devices based on CBDL compounds were discussed. Further developments and prospects for exploring high-performance copper-based diamond-like thermoelectric materials and devices were also presented at the end.
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Affiliation(s)
- Wenying Wang
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Lin Bo
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Junliang Zhu
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
| | - Degang Zhao
- School of Materials Science and Engineering, University of Jinan, Jinan 250022, China
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16
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Carnevali V, Mukherjee S, Voneshen DJ, Maji K, Guilmeau E, Powell AV, Vaqueiro P, Fornari M. Lone Pair Rotation and Bond Heterogeneity Leading to Ultralow Thermal Conductivity in Aikinite. J Am Chem Soc 2023; 145:9313-9325. [PMID: 37053084 PMCID: PMC10141412 DOI: 10.1021/jacs.3c02536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/14/2023]
Abstract
Understanding the relationship between the crystal structure, chemical bonding, and lattice dynamics is crucial for the design of materials with low thermal conductivities, which are essential in fields as diverse as thermoelectrics, thermal barrier coatings, and optoelectronics. The bismuthinite-aikinite series, Cu1-x□xPb1-xBi1+xS3 (0 ≤ x ≤ 1, where □ represents a vacancy), has recently emerged as a family of n-type semiconductors with exceptionally low lattice thermal conductivities. We present a detailed investigation of the structure, electronic properties, and the vibrational spectrum of aikinite, CuPbBiS3 (x = 0), in order to elucidate the origin of its ultralow thermal conductivity (0.48 W m-1 K-1 at 573 K), which is close to the calculated minimum for amorphous and disordered materials, despite its polycrystalline nature. Inelastic neutron scattering data reveal an anharmonic optical phonon mode at ca. 30 cm-1, attributed mainly to the motion of Pb2+ cations. Analysis of neutron diffraction data, together with ab-initio molecular dynamics simulations, shows that the Pb2+ lone pairs are rotating and that, with increasing temperature, Cu+ and Pb2+ cations, which are separated at distances of ca. 3.3 Å, exhibit significantly larger displacements from their equilibrium positions than Bi3+ cations. In addition to bond heterogeneity, a temperature-dependent interaction between Cu+ and the rotating Pb2+ lone pair is a key contributor to the scattering effects that lower the thermal conductivity in aikinite. This work demonstrates that coupling of rotating lone pairs and the vibrational motion is an effective mechanism to achieve ultralow thermal conductivity in crystalline materials.
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Affiliation(s)
- Virginia Carnevali
- Department of Physics and Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, Michigan 48859, United States
| | - Shriparna Mukherjee
- Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6DX, U.K
| | - David J Voneshen
- ISIS Pulsed Neutron and Muon Source, Rutherford Appleton Laboratory, Chilton, Didcot OX11 0QX, Oxon, U.K
- Department of Physics, Royal Holloway University of London, Egham TW20 0EX, U.K
| | - Krishnendu Maji
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, Caen 14000, France
| | - Emmanuel Guilmeau
- CRISMAT, CNRS, Normandie Univ, ENSICAEN, UNICAEN, Caen 14000, France
| | - Anthony V Powell
- Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6DX, U.K
| | - Paz Vaqueiro
- Department of Chemistry, University of Reading, Whiteknights, Reading RG6 6DX, U.K
| | - Marco Fornari
- Department of Physics and Science of Advanced Materials Program, Central Michigan University, Mt. Pleasant, Michigan 48859, United States
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17
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Isotta E, Peng W, Balodhi A, Zevalkink A. Elastic Moduli: a Tool for Understanding Chemical Bonding and Thermal Transport in Thermoelectric Materials. Angew Chem Int Ed Engl 2023; 62:e202213649. [PMID: 36516061 DOI: 10.1002/anie.202213649] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/15/2022] [Revised: 12/14/2022] [Accepted: 12/14/2022] [Indexed: 12/15/2022]
Abstract
The elastic behavior of a material can be a powerful tool to decipher thermal transport. In thermoelectrics, measuring the elastic moduli-directly tied to sound velocity-is critical to understand trends in lattice thermal conductivity, as well as study bond anharmonicity and phase transitions, given the sensitivity of elastic moduli to the chemical bonding. In this review, we introduce the basics of elasticity and explain the origin of high-temperature lattice softening from a bonding perspective. We then review elasticity data throughout classes of thermoelectrics, and explore trends in sound velocity, anharmonicity, and thermal conductivity. We reveal how experimental sound velocities can improve the accuracy of common thermal conductivity models and present a critical discussion of Grüneisen parameter estimates from elastic moduli. Readers will be equipped with tools to leverage elasticity measurements or calculations to accurately interpret thermal transport trends.
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Affiliation(s)
- Eleonora Isotta
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, USA
| | - Wanyue Peng
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, USA
| | - Ashiwini Balodhi
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, USA
| | - Alexandra Zevalkink
- Department of Chemical Engineering and Materials Science, Michigan State University, East Lansing, MI, USA
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18
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Wen J, Peng J, Zhang B, Wang ZY. Theoretical determination of superior high-temperature thermoelectricity in an n-type doped 2H-ZrI 2 monolayer. NANOSCALE 2023; 15:4397-4407. [PMID: 36748336 DOI: 10.1039/d2nr06054j] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional materials with a competitive figure of merit zT are extremely desirable for the fabrication of thermoelectric modules. In the present work, we systematically evaluated the thermoelectricity of monolayer 2H-ZrI2 through first-principles calculations and semiclassical Boltzmann transport theory. Apart from its all-round structural stability and feasibility of experimental preparation, the semiconducting material with a moderate indirect bandgap of 1.07 eV at the HSE06 level exhibits an acceptable lattice thermal conductivity κL of 6.69 W m-1 K-1 at 900 K contributed dominantly by acoustic modes. The four-phonon scattering is found to exert a minor effect on the κL of the monolayer. Moreover, a quite large power factor of up to 147.89 mW m-1 K-2 can be achieved due to the conduction band valley degeneracy near the Fermi level. These transport coefficients eventually give rise to a significant optimal n-type zT value as high as 3.57 at 900 K at a certain experimentally achievable electron doping concentration. Our study demonstrates the potential application of monolayer 2H-ZrI2 in high-temperature thermoelectric devices.
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Affiliation(s)
- Jia Wen
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
- Chongqing Key Laboratory of Micro-Nano Structure Optoelectronics, Chongqing 400715, China
| | - Jie Peng
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
- Chongqing Key Laboratory of Micro-Nano Structure Optoelectronics, Chongqing 400715, China
| | - Bokai Zhang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
- Chongqing Key Laboratory of Micro-Nano Structure Optoelectronics, Chongqing 400715, China
| | - Zhi-Yong Wang
- School of Physical Science and Technology, Southwest University, Chongqing 400715, China.
- Chongqing Key Laboratory of Micro-Nano Structure Optoelectronics, Chongqing 400715, China
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19
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Bottega A, Campagnoli E, Dongiovanni C, Giaretto V. Experimental characterization of a commercial TEG device under mimicked operating conditions. NANOTECHNOLOGY 2022; 34:085705. [PMID: 36368031 DOI: 10.1088/1361-6528/aca20c] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 11/11/2022] [Indexed: 06/16/2023]
Abstract
A long-standingzT= 1 barrier is still present in commercial thermoelectric generator devices (TEG) and is typically not overcome. Although it is possible to accept the current limits of such devices, the performances reported on the datasheets are frequently not obtainable when these thermoelectric devices are arranged for use in the actual operating conditions. Despite this, the current primary energy prices and ongoing climate change make their use attractive for many industrial sectors. An experimental investigation is here proposed on a single type of TEG available on the market; the temperature relationships of the electrical resistivity, Seebeck coefficient, and thermal conductivity in a thermostatic chamber were first determined. A piece of apparatus was assembled to mimic the operating conditions of the TEG device and verify its performance, but some critical issues were highlighted regarding the heat transfer and its ability to maintain an adequate contact pressure on the hot and cold sides of the module. In order to extend the recovery of waste heat to a non-excessively high temperature in the hot forging process, the maximum temperature attained on the hot side of the TEG in the performed experiments was not allowed to exceed 180 °C. With temperatures of around 160 °C on the hot side and just over 40 °C on the cold side, the conversion efficiency was close to 3%. Considering this conversion efficiency and the operating conditions, the estimated order of magnitude of the electricity that could be produced by recovering heat waste in the Italian hot forging sector could be in the region of some hundreds of MWh per year.
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Affiliation(s)
- Andrea Bottega
- Department of Energy, Politecnico di Torino, Turin, Italy
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20
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Progress of Polymer-Based Thermally Conductive Materials by Fused Filament Fabrication: A Comprehensive Review. Polymers (Basel) 2022; 14:polym14204297. [PMID: 36297876 PMCID: PMC9608148 DOI: 10.3390/polym14204297] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/19/2022] [Revised: 10/08/2022] [Accepted: 10/09/2022] [Indexed: 12/05/2022] Open
Abstract
With the miniaturization and integration of electronic products, the heat dissipation efficiency of electronic equipment needs to be further improved. Notably, polymer materials are a choice for electronic equipment matrices because of their advantages of low cost and wide application availability. However, the thermal conductivity of polymers is insufficient to meet heat dissipation requirements, and their improvements remain challenging. For decades, as an efficient manufacturing technology, additive manufacturing has gradually attracted public attention, and researchers have also used this technology to produce new thermally conductive polymer materials. Here, we review the recent research progress of different 3D printing technologies in heat conduction and the thermal conduction mechanism of polymer matrix composites. Based on the classification of fillers, the research progress of thermally conductive materials prepared by fused filament fabrication (FFF) is discussed. It analyzes the internal relationship between FFF process parameters and the thermal conductivity of polymer matrix composites. Finally, this study summarizes the application and future development direction of thermally conductive composites by FFF.
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21
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Fiedler C, Kleinhanns T, Garcia M, Lee S, Calcabrini M, Ibáñez M. Solution-Processed Inorganic Thermoelectric Materials: Opportunities and Challenges. CHEMISTRY OF MATERIALS : A PUBLICATION OF THE AMERICAN CHEMICAL SOCIETY 2022; 34:8471-8489. [PMID: 36248227 PMCID: PMC9558429 DOI: 10.1021/acs.chemmater.2c01967] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/01/2022] [Revised: 09/05/2022] [Indexed: 05/25/2023]
Abstract
Thermoelectric technology requires synthesizing complex materials where not only the crystal structure but also other structural features such as defects, grain size and orientation, and interfaces must be controlled. To date, conventional solid-state techniques are unable to provide this level of control. Herein, we present a synthetic approach in which dense inorganic thermoelectric materials are produced by the consolidation of well-defined nanoparticle powders. The idea is that controlling the characteristics of the powder allows the chemical transformations that take place during consolidation to be guided, ultimately yielding inorganic solids with targeted features. Different from conventional methods, syntheses in solution can produce particles with unprecedented control over their size, shape, crystal structure, composition, and surface chemistry. However, to date, most works have focused only on the low-cost benefits of this strategy. In this perspective, we first cover the opportunities that solution processing of the powder offers, emphasizing the potential structural features that can be controlled by precisely engineering the inorganic core of the particle, the surface, and the organization of the particles before consolidation. We then discuss the challenges of this synthetic approach and more practical matters related to solution processing. Finally, we suggest some good practices for adequate knowledge transfer and improving reproducibility among different laboratories.
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Affiliation(s)
- Christine Fiedler
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Tobias Kleinhanns
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Maria Garcia
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Seungho Lee
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Mariano Calcabrini
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
| | - Maria Ibáñez
- Institute
of Science and Technology Austria (ISTA), Am Campus 1, 3400 Klosterneuburg, Austria
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22
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Toriyama MY, Cheikh D, Bux SK, Snyder GJ, Gorai P. Y 2Te 3: A New n-Type Thermoelectric Material. ACS APPLIED MATERIALS & INTERFACES 2022; 14:43517-43526. [PMID: 36123322 DOI: 10.1021/acsami.2c12112] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Rare-earth chalcogenides Re3-xCh4 (Re = La, Pr, Nd, Ch = S, Se, and Te) have been extensively studied as high-temperature thermoelectric (TE) materials owing to their low lattice thermal conductivity (κL) and tunable electron carrier concentration via cation vacancies. In this work, we introduce Y2Te3, a rare-earth chalcogenide with a rocksalt-like vacancy-ordered structure, as a promising n-type TE material. We computationally evaluate the transport properties, optimized TE performance, and doping characteristics of Y2Te3. Combined with a low κL, multiple low-lying conduction band valleys yield a high n-type TE quality factor. We find that a maximum figure of merit zT > 1 can be achieved when Y2Te3 is optimally doped to an electron concentration of 1-2 × 1020 cm-3. We use defect calculations to show that Y2Te3 is n-type dopable under Y-rich growth conditions, which suppress the formation of acceptor-like cation vacancies. Furthermore, we propose that optimal n-type doping can be achieved with halogens (Cl, Br, and I), with I being the most effective dopant. Our computational results as well as experimental results reported elsewhere motivate further optimization of Y2Te3 as an n-type TE material.
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Affiliation(s)
| | - Dean Cheikh
- Thermal Energy Conversion Materials Group, Jet Propulsion Laboratory/California Institute of Technology, Pasadena, California 91109, United States
| | - Sabah K Bux
- Thermal Energy Conversion Materials Group, Jet Propulsion Laboratory/California Institute of Technology, Pasadena, California 91109, United States
| | - G Jeffrey Snyder
- Northwestern University, Evanston, Illinois 60208, United States
| | - Prashun Gorai
- Colorado School of Mines, Golden, Colorado 80401, United States
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23
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Wang H, Hao J, Yang D. Noncovalent functionalization of boron nitride via chelation of tannic acid with Fe ions for constructing high thermally conductive polymeric composites. POLYM ADVAN TECHNOL 2022. [DOI: 10.1002/pat.5822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/08/2022]
Affiliation(s)
- Hailong Wang
- College of New Materials and Chemical Engineering, Beijing Institute of Petrochemical Technology Beijing China
| | - Jian Hao
- College of New Materials and Chemical Engineering, Beijing Institute of Petrochemical Technology Beijing China
| | - Dan Yang
- Collage of Materials Science and Engineering, Beijing University of Chemical Technology Beijing China
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24
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Yang Q, Lyu T, Nan B, Tie J, Xu G. Enabling High Quality Factor and Enhanced Thermoelectric Performance in BiBr 3-Doped Sn 0.93Mn 0.1Te via Band Convergence and Band Sharpening. ACS APPLIED MATERIALS & INTERFACES 2022; 14:32236-32243. [PMID: 35815510 DOI: 10.1021/acsami.2c06822] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Lead-free SnTe-based materials are expected to replace PbTe and have gained much attention from the thermoelectric community. In this work, a maximum ZT of ∼1.31 at 873 K is attained in SnTe via promoting a high quality factor resulting from Mn alloying and BiBr3 doping. The results show that Mn alloying in SnTe converges the L band and the ∑ band in valence bands to supply enhanced valley degeneracy and the density of states effective mass, giving rise to a high power factor of ∼21.67 μW cm-1 K-2 at 723 K in Sn0.93Mn0.1Te. In addition, the subsequent BiBr3 doping can sharpen the top of the valence band to coordinate the contradiction between the band effective mass and the carrier mobility, thus enhancing the carrier mobility while maintaining a relatively large density of states effective mass. Consequently, a maximum power factor of 23.85 μW cm-1 K-2 at 873 K is achieved in Sn0.93Mn0.1Te-0.8 atom % BiBr3. In addition to band sharpening, BiBr3 doping can also effectively suppress the bipolar effect at elevated temperatures and reduce the lattice thermal conductivity by strengthening the point defect phonon scattering. Benefitting from doping BiBr3 in Sn0.93Mn0.1Te optimizes the carrier mobility and suppresses the lattice thermal conductivity, resulting in a dramatically enhanced quality factor. Accordingly, an average ZT of ∼0.62 in the temperature range of 300-873 K is obtained in Sn0.93Mn0.1Te-0.8 atom % BiBr3, ∼250% increase compared with that in Sn1.03Te.
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Affiliation(s)
- Quanxin Yang
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Tu Lyu
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
- College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Bohang Nan
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Jian Tie
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
| | - Guiying Xu
- Beijing municipal key lab of advanced energy materials and technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing 100083, P. R. China
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25
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Lee YL, Lee H, Kim T, Byun S, Lee YK, Jang S, Chung I, Chang H, Im J. Data-Driven Enhancement of ZT in SnSe-Based Thermoelectric Systems. J Am Chem Soc 2022; 144:13748-13763. [DOI: 10.1021/jacs.2c04741] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Affiliation(s)
- Yea-Lee Lee
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Hyungseok Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Taeshik Kim
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Sejin Byun
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Yong Kyu Lee
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Seunghun Jang
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - In Chung
- School of Chemical and Biological Engineering, and Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Correlated Electron Systems, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Hyunju Chang
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
| | - Jino Im
- Korea Research Institute of Chemical Technology (KRICT), Daejeon 34114, Republic of Korea
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26
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Parajuli P, Bhattacharya S, Rao R, Rao AM. Phonon anharmonicity in binary chalcogenides for efficient energy harvesting. MATERIALS HORIZONS 2022; 9:1602-1622. [PMID: 35467689 DOI: 10.1039/d1mh01601f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Thermoelectric (TE) materials have received much attention due to their ability to harvest waste heat energy. TE materials must exhibit a low thermal conductivity (κ) and a high power factor (PF) for efficient conversion. Both factors define the figure of merit (ZT) of the TE material, which can be increased by suppressing κ without degrading the PF. Recently, binary chalcogenides such as SnSe, GeTe, and PbTe have emerged as attractive candidates for thermoelectric energy generation at moderately high temperatures. These materials possess simple crystal structures with low κ in their pristine forms, which can be further lowered through doping and other approaches. Here, we review the recent advances in the temperature-dependent behavior of phonons and their influence on the thermal transport properties of chalcogenide-based TE materials. Because phonon anharmonicity is one of the fundamental contributing factors for low thermal conductivity in SnSe, Sb-doped GeTe, and related chalcogenides, we discuss complementary experimental approaches such as temperature-dependent Raman spectroscopy, inelastic neutron scattering, and calorimetry to measure anharmonicity. We further show how data gathered using multiple techniques helps us understand and engineer better TE materials. Finally, we discuss the rise of machine learning-aided efforts to discover, design, and synthesize TE materials of the future.
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Affiliation(s)
- P Parajuli
- Clemson Nanomaterials Institute, and Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA.
| | - S Bhattacharya
- Clemson Nanomaterials Institute, and Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA.
| | - R Rao
- Air Force Research Laboratory, WPAFB, Ohio 45433, USA
| | - A M Rao
- Clemson Nanomaterials Institute, and Department of Physics and Astronomy, Clemson University, Clemson, SC 29634, USA.
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27
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Agne MT, Anand S, Snyder GJ. Inherent Anharmonicity of Harmonic Solids. RESEARCH (WASHINGTON, D.C.) 2022; 2022:9786705. [PMID: 38617551 PMCID: PMC11014735 DOI: 10.34133/2022/9786705] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 02/12/2022] [Accepted: 03/24/2022] [Indexed: 04/16/2024]
Abstract
Atomic vibrations, in the form of phonons, are foundational in describing the thermal behavior of materials. The possible frequencies of phonons in materials are governed by the complex bonding between atoms, which is physically represented by a spring-mass model that can account for interactions (spring forces) between the atoms (masses). The lowest-order, harmonic, approximation only considers linear forces between atoms and is thought incapable of explaining phenomena like thermal expansion and thermal conductivity, which are attributed to nonlinear, anharmonic, interactions. Here, we show that the kinetic energy of atoms in a solid produces a pressure much like the kinetic energy of atoms in a gas does. This vibrational or phonon pressure naturally increases with temperature, as it does in a gas and therefore results in a thermal expansion. Because thermal expansion thermodynamically defines a Grüneisen parameter γ , which is a typical metric of anharmonicity, we show that even a harmonic solid will necessarily have some anharmonicity. A consequence of this phonon pressure model is a harmonic estimation of the Grüneisen parameter as γ ≈ 3 / 2 3 - 4 x 2 / 1 + 2 x 2 , where x = v t / v l is the ratio of the transverse and longitudinal speeds of sound. We demonstrate the immediate utility of this model by developing a high-throughput harmonic estimate of lattice thermal conductivity that is comparable to other state-of-the-art estimations. By linking harmonic and anharmonic properties explicitly, this study provokes new ideas about the fundamental nature of anharmonicity, while also providing a basis for new material engineering design metrics.
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Affiliation(s)
- Matthias T. Agne
- Department Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - Shashwat Anand
- Department Materials Science and Engineering, Northwestern University, Evanston, IL, USA
| | - G. Jeffrey Snyder
- Department Materials Science and Engineering, Northwestern University, Evanston, IL, USA
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28
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Interfacial ion regulation on 2D layered double hydroxide nanosheets for enhanced thermal insulation. Sci China Chem 2022. [DOI: 10.1007/s11426-021-1201-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/26/2022]
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29
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Sun DX, Gu T, Mao YT, Huang CH, Qi XD, Yang JH, Wang Y. Fabricating High-Thermal-Conductivity, High-Strength, and High-Toughness Polylactic Acid-Based Blend Composites via Constructing Multioriented Microstructures. Biomacromolecules 2022; 23:1789-1802. [PMID: 35344361 DOI: 10.1021/acs.biomac.2c00067] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
The massive accumulation of plastic waste has caused a serious negative impact on the human living environment. Replacing traditional petroleum-based polymers with biobased and biodegradable poly(l-lactic acid) (PLLA) is considered an effective way to solve this problem. However, it is still a great challenge to manufacture PLLA-based composites with high thermal conductivity and excellent mechanical properties via tailoring the microstructures of the blend composites. In the present work, a melt extrusion-stretching method is utilized to fabricate biodegradable PLLA/poly(butylene adipate-co-butylene terephthalate)/carbon nanofiber (PLLA/PBAT/CNF) blend composites. It is found that the incorporation of the extensional flow field induces the formation of multioriented microstructures in the composites, including the oriented PLLA molecular chains, elongated PBAT dispersed phase, and oriented CNFs, which synergistically improve the thermal conductivity and mechanical properties of the blend composites. At a CNF content of 10 wt %, the in-plane thermal conductivity, tensile strength, and elongation at break of the blend composite reach 1.53 Wm-1 K-1, 66.8 MPa, and 56.5%, respectively, which increased by 31.9, 73.5, and 874.1% compared with those of the conventionally hot-compressed sample (1.16 Wm-1 K-1, 38.5 MPa, and 5.8%, respectively). The main mechanism for the improved thermal conductivity is that the multioriented structure promotes the formation of a CNF thermal conductive network in the composites. The strengthening mechanism is attributed to the orientation of both PLLA molecular chains and CNFs in the stretching direction, restricting the movement of PLLA molecular segments around CNFs, and the toughening mechanism is due to the transformation of PLLA molecular chains from low-energy gt conformers to high-energy gg conformers induced by extensional flow field. More interestingly, after the extrusion-stretched samples are annealed, the oriented PLLA molecular chains form oriented crystal structures such as extended-chain lamellae, common "Shish-kebabs," and hybrid Shish-kebabs, which further enhance the thermal conductivity and heat resistance of the samples. This work reveals the effects of the orientation of the matrix molecular chains and crystallites on the thermal conductivity and mechanical properties of composites and provides a new way to prepare high-performance PLLA-based composites with high thermal conductivity, excellent mechanical properties, and high heat resistance.
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Affiliation(s)
- De-Xiang Sun
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science & Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Ting Gu
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science & Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Yu-Tong Mao
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science & Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Chen-Hui Huang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science & Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Xiao-Dong Qi
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science & Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Jing-Hui Yang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science & Engineering, Southwest Jiaotong University, Chengdu 610031, China
| | - Yong Wang
- Key Laboratory of Advanced Technologies of Materials (Ministry of Education), School of Materials Science & Engineering, Southwest Jiaotong University, Chengdu 610031, China
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30
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Qu J, Balvanz A, Baranets S, Bobev S, Gorai P. Computational design of thermoelectric alloys through optimization of transport and dopability. MATERIALS HORIZONS 2022; 9:720-730. [PMID: 34854862 DOI: 10.1039/d1mh01539g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Alloying is a common technique to optimize the functional properties of materials for thermoelectrics, photovoltaics, energy storage etc. Designing thermoelectric (TE) alloys is especially challenging because it is a multi-property optimization problem, where the properties that contribute to high TE performance are interdependent. In this work, we develop a computational framework that combines first-principles calculations with alloy and point defect modeling to identify alloy compositions that optimize the electronic, thermal, and defect properties. We apply this framework to design n-type Ba2(1-x)Sr2xCdP2 Zintl thermoelectric alloys. Our predictions of the crystallographic properties such as lattice parameters and site disorder are validated with experiments. To optimize the conduction band electronic structure, we perform band unfolding to sketch the effective band structures of alloys and find a range of compositions that facilitate band convergence and minimize alloy scattering of electrons. We assess the n-type dopability of the alloys by extending the standard approach for computing point defect energetics in ordered structures. Through the application of this framework, we identify an optimal alloy composition range with the desired electronic and thermal transport properties, and n-type dopability. Such a computational framework can also be used to design alloys for other functional applications beyond TE.
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Affiliation(s)
- Jiaxing Qu
- University of Illinois at Urbana-Champaign, Urbana, IL 61801, USA
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31
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Cheng X, Zhu B, Yang D, Su X, Liu W, Xie H, Zheng Y, Tang X. Enhanced Thermoelectric Properties of Cu 2SnSe 3-Based Materials with Ag 2Se Addition. ACS APPLIED MATERIALS & INTERFACES 2022; 14:5439-5446. [PMID: 35073688 DOI: 10.1021/acsami.1c22590] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
In this work, (Ag, In)-co-doped Cu2SnSe3-based compounds are prepared using a self-propagating high-temperature synthesis process. Ag2Se and as-synthesized (Ag, In)-co-doped Cu2SnSe3-based powders are mixed in a proportion according to the formula of Cu1.85Ag0.15Sn0.91In0.09Se3/x Ag2Se (x = 0, 3, 4, and 5%), which is followed by a subsequent plasma-activated sintering (PAS) to obtain consolidated composite bulks. A sandwich experiment is designed to reveal the evolution of the microstructure and phase composition of the composite samples during the PAS process. We investigate the reaction mechanism between Ag2Se and Cu2SnSe3-based matrix as well as the influence of Ag2Se on the phase composition, microstructure, and thermoelectric transport properties of the composites. Ag2Se addition is proven to be effective to improve Ag solubility in the Cu1.85Ag0.15Sn0.91In0.09Se3 matrix and introduce a CuSe secondary phase and an Ag-rich phase at grain boundaries. The electrical conductivity of Cu1.85Ag0.15Sn0.91In0.09Se3/x Ag2Se (x = 0, 3, 4, and 5%) composites decreases while the Seebeck coefficient increases with increasing Ag2Se addition, resulting in an optimized power factor. Moreover, benefiting from the collective phonon scattering at various defects induced by Ag2Se addition, the composite samples exhibit significantly suppressed lattice thermal conductivity, which reaches as low as 0.11 W m-1 K-1 at 700 K for the x = 5% sample. A peak figure-of-merit (ZT) of 1.26 at 750 K and an average ZT of 0.75 at 300-800 K are obtained for Cu1.85Ag0.15Sn0.91In0.09Se3/5% Ag2Se. This work provides an efficient way to improve average ZT values of Cu2SnSe3-based compounds for promising power generation at intermediate temperatures.
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Affiliation(s)
- Xin Cheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
- Key Laboratory of Textile Fiber and Product, Ministry of Education, Wuhan Textile University, Wuhan 430200, China
- Hubei Zhongyi Technology Co. Limited, 47 Mengze Road, Yunmeng County, Xiaogan 432599, Hubei, China
| | - Bo Zhu
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Dongwang Yang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Wei Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Hongyao Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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32
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Yuan R, Chen L, Wu C. Heat Conduction Behavior of Two-Dimensional Nanomaterials and Their Interface Regulation ※. ACTA CHIMICA SINICA 2022. [DOI: 10.6023/a21120616] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/30/2023]
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33
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Tang S, Bai S, Wu M, Luo D, zhang YJ, wen S, Yang S. Low-cost pentagonal NiX2 (X=S, Se, and Te) monolayers with strong anisotropy as potential thermoelectric materials. Phys Chem Chem Phys 2022; 24:5185-5198. [DOI: 10.1039/d1cp05671a] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Pentagonal compounds, as a new family of 2D materials, have recently been extensively studied in the fields of electrocatalysis, photovoltaics, and thermoelectrics. Encouraged by the successful synthesis of pentagonal PdSe2,...
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34
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Cheng X, Yang D, Su X, Xie H, Liu W, Zheng Y, Tang X. Synergistically Enhanced Thermoelectric Performance of Cu 2SnSe 3-Based Composites via Ag Doping Balance. ACS APPLIED MATERIALS & INTERFACES 2021; 13:55178-55187. [PMID: 34783236 DOI: 10.1021/acsami.1c17460] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
As an ecofriendly and low-cost thermoelectric material, Cu2SnSe3 has recently drawn much attention. In this work, the thermoelectric properties of Cu2SnSe3-based materials have been synergistically optimized. Ag doping at the Cu site enables strong phonon scattering via large strain field fluctuations and increases the effective mass of carriers through band engineering, which results in a reduced lattice thermal conductivity and enhanced Seebeck coefficient. Thus, a peak ZT value of 1.04 at 800 K is obtained for Cu1.85Ag0.15SnSe3. Then, In is further doped at the Sn site to further increase the carrier concentration and power factor; the ZT values of Cu1.85Ag0.15Sn1-yInySe3 samples are highly improved in the temperature range of 300-800 K, and a peak ZT value of 1.12 is obtained at 800 K for the Cu1.85Ag0.15Sn0.91In0.09Se3 sample. Considering that Ag2S decomposes to Ag and S completely under vacuum and high current field, the sulfur vapor would be pumped away by a vacuum pump, and the generated Ag not only enriches at the grain boundary of the Cu1.85Ag0.15Sn0.91In0.09Se3 bulk material but also enters the matrix and occupies the Cu site, leading to the extruding Cu and Se forming the second phase of CuSe nanoparticles. Thus, the power factor greatly improves to 13.8 μW cm-1 K-2 at 700 K, and the lattice thermal conductivity is as low as 0.12 W m-1 K-1 at 800 K for the Cu1.85Ag0.15Sn0.91In0.09Se3/4% Ag2S composite. Finally, a high ZT value of 1.58 is obtained at 800 K for the Cu1.85Ag0.15Sn0.91In0.09Se3/4% Ag2S composite, which is nearly an increase of 204% compared to that of Cu2SnSe3. This work provides an effective solution to optimize the conflicting material properties for Cu2SnSe3-based thermoelectric materials.
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Affiliation(s)
- Xin Cheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Dongwang Yang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Xianli Su
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Hongyao Xie
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Wei Liu
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
| | - Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan 430056, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070, China
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35
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Lin W, He J, Su X, Zhang X, Xia Y, Bailey TP, Stoumpos CC, Tan G, Rettie AJE, Chung DY, Dravid VP, Uher C, Wolverton C, Kanatzidis MG. Ultralow Thermal Conductivity, Multiband Electronic Structure and High Thermoelectric Figure of Merit in TlCuSe. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104908. [PMID: 34523151 DOI: 10.1002/adma.202104908] [Citation(s) in RCA: 7] [Impact Index Per Article: 2.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/26/2021] [Revised: 08/02/2021] [Indexed: 06/13/2023]
Abstract
The entanglement of lattice thermal conductivity, electrical conductivity, and Seebeck coefficient complicates the process of optimizing thermoelectric performance in most thermoelectric materials. Semiconductors with ultralow lattice thermal conductivities and high power factors at the same time are scarce but fundamentally interesting and practically important for energy conversion. Herein, an intrinsic p-type semiconductor TlCuSe that has an intrinsically ultralow thermal conductivity (0.25 W m-1 K-1 ), a high power factor (11.6 µW cm-1 K-2 ), and a high figure of merit, ZT (1.9) at 643 K is described. The weak chemical bonds, originating from the filled antibonding orbitals p-d* within the edge-sharing CuSe4 tetrahedra and long TlSe bonds in the PbClF-type structure, in conjunction with the large atomic mass of Tl lead to an ultralow sound velocity. Strong anharmonicity, coming from Tl+ lone-pair electrons, boosts phonon-phonon scattering rates and further suppresses lattice thermal conductivity. The multiband character of the valence band structure contributing to power factor enhancement benefits from the lone-pair electrons of Tl+ as well, which modify the orbital character of the valence bands, and pushes the valence band maximum off the Γ-point, increasing the band degeneracy. The results provide new insight on the rational design of thermoelectric materials.
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Affiliation(s)
- Wenwen Lin
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Jiangang He
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Xianli Su
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Xiaomi Zhang
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Yi Xia
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Trevor P Bailey
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Constantinos C Stoumpos
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Technology, University of Crete, Heraklion, GR-70013, Greece
| | - Ganjian Tan
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, 430070, China
| | - Alexander J E Rettie
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
- Electrochemical Innovation Lab, Department of Chemical Engineering, University College London, Bloomsbury, London, WC1E 6BT, UK
| | - Duck Young Chung
- Materials Science Division, Argonne National Laboratory, Lemont, IL, 60439, USA
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Ctirad Uher
- Department of Physics, University of Michigan, Ann Arbor, MI, 48109, USA
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Engineering, Northwestern University, Evanston, IL, 60208, USA
- Department of Materials Science and Technology, University of Crete, Heraklion, GR-70013, Greece
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36
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Parashchuk T, Wiendlocha B, Cherniushok O, Knura R, Wojciechowski KT. High Thermoelectric Performance of p-Type PbTe Enabled by the Synergy of Resonance Scattering and Lattice Softening. ACS APPLIED MATERIALS & INTERFACES 2021; 13:49027-49042. [PMID: 34632774 DOI: 10.1021/acsami.1c14236] [Citation(s) in RCA: 12] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
In this work, we show the simultaneous enhancement of electrical transport and reduction of phonon propagation in p-type PbTe codoped with Tl and Na. The effective use of advanced electronic structure engineering improves the thermoelectric power factor S2σ over the temperature range from 300 to 825 K. A rise in the Seebeck coefficient S was obtained due to the enhanced effective mass m*, coming from the Tl resonance state in PbTe. Due to the presence of additional carriers brought by Na codoping, electrical conductivity became significantly improved. Furthermore, Tl and Na impurities induced crystal lattice softening, remarkably reducing lattice thermal conductivity, which was confirmed by a measured low speed of sound vm and high internal strain CεXRD. Eventually, the combination of both the attuned electronic structure and the lattice softening effects led to a very high ZT value of up to ∼2.1 for the Pb1-x-yTlxNayTe samples. The estimated energy conversion efficiency shows the extraordinary value of 15.4% (Tc = 300 K, Th = 825 K), due to the significantly improved average thermoelectric figure of merit ZTave = 1.05. This work demonstrates that the combination of impurity resonance scattering and crystal lattice softening can be a breakthrough concept for advancing thermoelectrics.
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Affiliation(s)
- Taras Parashchuk
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
| | - Bartlomiej Wiendlocha
- Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, 30-059 Krakow, Poland
| | - Oleksandr Cherniushok
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
| | - Rafal Knura
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
- Department of Science, Graduate School of Science and Technology, Kumamoto University, 2 Chome-39-1 Kurokami, Chuo Ward, 860-8555 Kumamoto, Japan
| | - Krzysztof T Wojciechowski
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, Mickiewicza Ave. 30, 30-059 Krakow, Poland
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Peng H, Hou D, Chen G. Quasi-one-dimensional thermal transport in trigonal selenium crystal. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2021; 33:455402. [PMID: 34384051 DOI: 10.1088/1361-648x/ac1d15] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Accepted: 08/12/2021] [Indexed: 06/13/2023]
Abstract
The lattice thermal conductivity in van der Waals crystal selenium is investigated by solving the phonon Boltzmann transport equation combined with the first-principles calculations. The lattice thermal conductivity of selenium along the perpendicular to the chain direction is extremely low, which is 5 times lower than the conductivity in the parallel direction, showing a clear quasi-one-dimensional heat transfer feature. The small phonon group velocity, acoustic-optical phonon branches mixing and bonding anharmonicity along the perpendicular to the chain direction contribute to the high anisotropy in thermal conductivity. Moreover, particles with several nanometers can introduce boundary scattering to a large portion of phonons modes in selenium, where the lattice thermal conductivity is greatly reduced. Both the unique one-dimensional thermal transport property and low thermal conductivity make selenium to be a potential thermal management in thermoelectric and other electronic technologies.
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Affiliation(s)
- Hua Peng
- School of Physics and Technology, University of Jinan, Jinan 250022, People's Republic of China
| | - Dong Hou
- School of Physics and Technology, University of Jinan, Jinan 250022, People's Republic of China
| | - Gang Chen
- School of Physics and Technology, University of Jinan, Jinan 250022, People's Republic of China
- School of Physics and Electronics, Shandong Normal University, Shandong 250358, People's Republic of China
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38
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Cherniushok O, Parashchuk T, Tobola J, Luu SDN, Pogodin A, Kokhan O, Studenyak I, Barchiy I, Piasecki M, Wojciechowski KT. Entropy-Induced Multivalley Band Structures Improve Thermoelectric Performance in p-Cu 7P(S xSe 1-x) 6 Argyrodites. ACS APPLIED MATERIALS & INTERFACES 2021; 13:39606-39620. [PMID: 34387484 DOI: 10.1021/acsami.1c11193] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/03/2023]
Abstract
Searching for novel low-cost and eco-friendly materials for energy conversion is a good way to provide widespread utilization of thermoelectric technologies. Herein, we report the thermal behavior, phase equilibria data, and thermoelectric properties for the promising argyrodite-based Cu7P(SxSe1-x)6 thermoelectrics. Alloying of Cu7PSe6 with Cu7PS6 provides a continuous solid solution over the whole compositional range, as shown in the proposed phase diagram for the Cu7PS6-Cu7PSe6 system. As a member of liquid-like materials, the investigated Cu7P(SxSe1-x)6 solid solutions possess a dramatically low lattice thermal conductivity, as low as ∼0.2-0.3 W m-1 K-1, over the entire temperature range. Engineering the configurational entropy of the material by introducing more elements stabilizes the thermoelectrically beneficial high-symmetry γ-phase and promotes the multivalley electronic structure of the valence band. As a result, a remarkable improvement of the Seebeck coefficient and a reduction of electrical resistivity were observed for the investigated alloys. The combined effect of the extremely low lattice thermal conductivity and enhanced power factor leads to the significant enhancement of the thermoelectric figure of merit ZT up to ∼0.75 at 673 K for the Cu7P(SxSe1-x)6 (x = 0.5) sample with the highest configurational entropy, which is around twice higher compared with the pure selenide and almost four times higher than sulfide. This work not only demonstrates the large potential of Cu7P(SxSe1-x)6 materials for energy conversion but also promotes sulfide argyrodites as earth-abundant and environmentally friendly materials for energy conversion.
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Affiliation(s)
- Oleksandr Cherniushok
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, 30 Mickiewicza Avenue, 30-059 Krakow, Poland
- Lukasiewicz Research Network, Krakow Institute of Technology, Zakopianska 73, 30-418 Krakow, Poland
| | - Taras Parashchuk
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, 30 Mickiewicza Avenue, 30-059 Krakow, Poland
- Lukasiewicz Research Network, Krakow Institute of Technology, Zakopianska 73, 30-418 Krakow, Poland
| | - Janusz Tobola
- Faculty of Physics and Applied Computer Science, AGH University of Science and Technology, 30-059 Krakow, Poland
| | - Son D N Luu
- Lukasiewicz Research Network, Krakow Institute of Technology, Zakopianska 73, 30-418 Krakow, Poland
- Institute of Research and Development, Duy Tan University, Da Nang 550000, Viet Nam
| | - Artem Pogodin
- Uzhhorod National University, Pidhirna 46, 88000 Uzhhorod, Ukraine
| | - Oleksandr Kokhan
- Uzhhorod National University, Pidhirna 46, 88000 Uzhhorod, Ukraine
| | - Ihor Studenyak
- Uzhhorod National University, Pidhirna 46, 88000 Uzhhorod, Ukraine
| | - Igor Barchiy
- Uzhhorod National University, Pidhirna 46, 88000 Uzhhorod, Ukraine
| | - Michal Piasecki
- Theoretical Physics Department, Jan Długosz University, Armii Krajowej 13/15, 42200 Częstochowa, Poland
| | - Krzysztof T Wojciechowski
- Thermoelectric Research Laboratory, Department of Inorganic Chemistry, Faculty of Materials Science and Ceramics, AGH University of Science and Technology, 30 Mickiewicza Avenue, 30-059 Krakow, Poland
- Lukasiewicz Research Network, Krakow Institute of Technology, Zakopianska 73, 30-418 Krakow, Poland
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Xie L, He D, He J. SnSe, the rising star thermoelectric material: a new paradigm in atomic blocks, building intriguing physical properties. MATERIALS HORIZONS 2021; 8:1847-1865. [PMID: 34846469 DOI: 10.1039/d1mh00091h] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Thermoelectric (TE) materials, which enable direct energy conversion between waste heat and electricity, have witnessed enormous and exciting developments over last several decades due to innovative breakthroughs both in materials and the synergistic optimization of structures and properties. Among the promising state-of-the-art materials for next-generation thermoelectrics, tin selenide (SnSe) has attracted rapidly growing research interest for its high TE performance and the intrinsic layered structure that leads to strong anisotropy. Moreover, complex interactions between lattice, charge, and orbital degrees of freedom in SnSe make up a large phase space for the optimization of its TE properties via the simultaneous tuning of structural and chemical features. Various techniques, especially advanced electron microscopy (AEM), have been devoted to exploring these critical multidiscipline correlations between TE properties and microstructures. In this review, we first focus on the intrinsic layered structure as well as the extrinsic structural "imperfectness" of various dimensions in SnSe as studied by AEM. Based on these characterization results, we give a comprehensive discussion on the current understanding of the structure-property relationship. We then point out the challenges and opportunities as provided by modern AEM techniques toward a deeper knowledge of SnSe based on electronic structures and lattice dynamics at the nanometer or even atomic scale, for example, the measurements of local charge and electric field distribution, phonon vibrations, bandgap, valence state, temperature, and resultant TE effects.
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Affiliation(s)
- Lin Xie
- Shenzhen Key Laboratory of Thermoelectric Materials and Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China.
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40
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Zulkepli N, Yunas J, Mohamed MA, Hamzah AA. Review of Thermoelectric Generators at Low Operating Temperatures: Working Principles and Materials. MICROMACHINES 2021; 12:734. [PMID: 34206662 PMCID: PMC8303398 DOI: 10.3390/mi12070734] [Citation(s) in RCA: 6] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 06/04/2021] [Revised: 06/17/2021] [Accepted: 06/17/2021] [Indexed: 11/17/2022]
Abstract
Thermoelectric generators (TEGs) are a form of energy harvester and eco-friendly power generation system that directly transform thermal energy into electrical energy. The thermoelectric (TE) method of energy harvesting takes advantage of the Seebeck effect, which offers a simple solution for fulfilling the power-supply demand in almost every electronics system. A high-temperature condition is commonly essential in the working mechanism of the TE device, which unfortunately limits the potential implementation of the device. This paper presents an in-depth analysis of TEGs at low operating temperature. The review starts with an extensive description of their fundamental working principles, structure, physical properties, and the figure of merit (ZT). An overview of the associated key challenges in optimising ZT value according to the physical properties is discussed, including the state of the art of the advanced approaches in ZT optimisation. Finally, this manuscript summarises the research status of Bi2Te3-based semiconductors and other compound materials as potential materials for TE generators working at low operating temperatures. The improved TE materials suggest that TE power-generation technology is essential for sustainable power generation at near-room temperature to satisfy the requirement for reliable energy supplies in low-power electrical/electronics systems.
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Affiliation(s)
- Nurkhaizan Zulkepli
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Malaysia; (N.Z.); (M.A.M.)
- Centre of Foundation Studies, Universiti Teknologi MARA, Cawangan Selangor, Kampus Dengkil, Dengkil 43800, Malaysia
| | - Jumril Yunas
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Malaysia; (N.Z.); (M.A.M.)
| | - Mohd Ambri Mohamed
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Malaysia; (N.Z.); (M.A.M.)
| | - Azrul Azlan Hamzah
- Institute of Microengineering and Nanoelectronic (IMEN), Universiti Kebangsaan Malaysia (UKM), Bangi 46300, Malaysia; (N.Z.); (M.A.M.)
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41
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Wu Y, Hou B, Ma C, Cao J, Chen Y, Lu Z, Mei H, Shao H, Xu Y, Zhu H, Fang Z, Zhang R, Zhang H. Thermoelectric performance of 2D materials: the band-convergence strategy and strong intervalley scatterings. MATERIALS HORIZONS 2021; 8:1253-1263. [PMID: 34821918 DOI: 10.1039/d0mh01802c] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The strategy of band convergence of multi-valley conduction bands or multi-peak valence bands has been widely used to search or improve thermoelectric materials. However, the phonon-assisted intervalley scatterings due to multiple band degeneracy are usually neglected in the thermoelectric community. In this work, we investigate the (thermo)electric properties of non-polar monolayer β- and α-antimonene considering full mode- and momentum-resolved electron-phonon interactions. We also analyze thoroughly the selection rules on electron-phonon matrix-elements using group-theory arguments. Our calculations reveal strong intervalley scatterings between the nearly degenerate valley states in both β- and α-antimonene, and the commonly-used deformation potential approximation neglecting the dominant intervalley scattering gives inaccurate estimations of the electron-phonon scattering and thermoelectric transport properties. By considering full electron-phonon interactions based on the rigid-band approximation, we find that, the maximum value of the thermoelectric figure of merits zT at room temperature reduces to 0.37 in β-antimonene, by a factor of 5.7 compared to the value predicted based on the constant relaxation-time approximation method. Our work not only provides an accurate prediction of the thermoelectric performances of antimonenes, which reveals the key role of intervalley scatterings in determining the electronic part of zT, but also exhibits a computational framework for thermoelectric materials.
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Affiliation(s)
- Yu Wu
- Key Laboratory of Micro and Nano Photonic Structures (MOE) and Key Laboratory for Information Science of Electromagnetic Waves (MOE) and Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China.
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Jiang L, Han L, Lu C, Yang S, Liu Y, Jiang H, Yan Y, Tang X, Yang D. Cu 2Se as Textured Adjuvant for Pb-Doped BiCuSeO Materials Leading to High Thermoelectric Performance. ACS APPLIED MATERIALS & INTERFACES 2021; 13:11977-11984. [PMID: 33685121 DOI: 10.1021/acsami.0c22861] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Exploring the origin of intrinsic low thermal conductivity in BiCuSeO is of great significance for searching new oxide thermoelectric (TE) materials. In addition, from the perspective of material preparation, it is of great value to further develop the TE performance optimization strategy of BiCuSeO-based materials. In this work, the low-temperature TE transport properties of Pb-doped BiCuSeO-based materials are investigated. It is found that Pb doping can greatly optimize the carrier concentration, soften the lattice, and reduce the lattice thermal conductivity. The addition of Cu2Se significantly enhanced the grain texture and then increased the interface concentration parallel to the pressure direction in the sintering process, which further reduced the lattice thermal conductivity of the material. Finally, the ZT value of Bi0.96Pb0.04CuSeO-6 mol % Cu2Se bulk material is as high as 0.85 at 840 K. This provides important guidance to improve the properties of TE materials via interface engineering.
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Affiliation(s)
- Long Jiang
- State Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, CNPC Tubular Goods Research Institute, Xi'an, Shaanxi 710077, China
- Shaanxi Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, Xi'an, Shaanxi 710077, China
- Key Laboratory of Petroleum Tubular Goods Engineering, CNPC, Xi'an, Shaanxi 710077, China
| | - Lihong Han
- State Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, CNPC Tubular Goods Research Institute, Xi'an, Shaanxi 710077, China
- Shaanxi Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, Xi'an, Shaanxi 710077, China
- Key Laboratory of Petroleum Tubular Goods Engineering, CNPC, Xi'an, Shaanxi 710077, China
- School of Materials Science and Engineering, Chang'an University, Xi'an, Shaanxi 710064, China
| | - Caihong Lu
- State Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, CNPC Tubular Goods Research Institute, Xi'an, Shaanxi 710077, China
- Shaanxi Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, Xi'an, Shaanxi 710077, China
- Key Laboratory of Petroleum Tubular Goods Engineering, CNPC, Xi'an, Shaanxi 710077, China
| | - Shangyu Yang
- State Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, CNPC Tubular Goods Research Institute, Xi'an, Shaanxi 710077, China
- Shaanxi Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, Xi'an, Shaanxi 710077, China
- Key Laboratory of Petroleum Tubular Goods Engineering, CNPC, Xi'an, Shaanxi 710077, China
| | - Yaxu Liu
- State Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, CNPC Tubular Goods Research Institute, Xi'an, Shaanxi 710077, China
- Shaanxi Key Laboratory for Performance and Structure Safety of Petroleum Tubular Goods and Equipment Materials, Xi'an, Shaanxi 710077, China
- Key Laboratory of Petroleum Tubular Goods Engineering, CNPC, Xi'an, Shaanxi 710077, China
| | - Haoze Jiang
- LWD Logging Center, China Petroleum Logging Co., Ltd., Xi'an, Shaanxi 710077, China
| | - Yonggao Yan
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Xinfeng Tang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, China
| | - Dongwang Yang
- State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan, Hubei 430070, China
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43
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Fu Y, Wei H, Wei L, Zhang H, Wang X, Liu B, Zhang Y, Lv X, Zhou J, Yu H. Origin of the difference in thermal conductivity and anharmonic phonon scattering between LiNbO 3 and LiTaO 3. CrystEngComm 2021. [DOI: 10.1039/d1ce01323h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
The origin of the different thermal conductivities between LiNbO3 and LiTaO3 stems from the different scattering channels throughout the whole Brillouin zone, as well as the different emission channels of the LA branch along the Γ–F direction.
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Affiliation(s)
- Yangbin Fu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Hui Wei
- Shandong Agriculture and Engineering University, Jinan 250014, China
| | - Lei Wei
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Huadi Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Xuping Wang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Bing Liu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Yuanyuan Zhang
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Xianshun Lv
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Jixue Zhou
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Shandong Provincial Key Laboratory of High Strength Lightweight Metallic Materials, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
| | - Huajian Yu
- Advanced Materials Institute, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
- Advanced Materials Institute, Key Laboratory of Light Conversion Materials and Technology of Shandong Academy of Sciences, Qilu University of Technology (Shandong Academy of Sciences), Jinan 250014, China
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Li A, Fu C, Zhao X, Zhu T. High-Performance Mg 3Sb 2-x Bi x Thermoelectrics: Progress and Perspective. RESEARCH 2020; 2020:1934848. [PMID: 33623901 PMCID: PMC7877388 DOI: 10.34133/2020/1934848] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/31/2020] [Accepted: 09/20/2020] [Indexed: 11/06/2022]
Abstract
Since the first successful implementation of n-type doping, low-cost Mg3Sb2-x Bi x alloys have been rapidly developed as excellent thermoelectric materials in recent years. An average figure of merit zT above unity over the temperature range 300-700 K makes this new system become a promising alternative to the commercially used n-type Bi2Te3-x Se x alloys for either refrigeration or low-grade heat power generation near room temperature. In this review, with the structure-property-application relationship as the mainline, we first discuss how the crystallographic, electronic, and phononic structures lay the foundation of the high thermoelectric performance. Then, optimization strategies, including the physical aspects of band engineering with Sb/Bi alloying and carrier scattering mechanism with grain boundary modification and the chemical aspects of Mg defects and aliovalent doping, are extensively reviewed. Mainstream directions targeting the improvement of zT near room temperature are outlined. Finally, device applications and related engineering issues are discussed. We hope this review could help to promote the understanding and future developments of low-cost Mg3Sb2-x Bi x alloys for practical thermoelectric applications.
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Affiliation(s)
- Airan Li
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China
| | - Chenguang Fu
- Max Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187 Dresden, Germany
| | - Xinbing Zhao
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China
| | - Tiejun Zhu
- State Key Laboratory of Silicon Materials, School of Materials Science and Engineering, Zhejiang University, 310027 Hangzhou, China
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45
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Zhou C, Chung I. Nanoscale defect structures advancing high performance n-type PbSe thermoelectrics. Coord Chem Rev 2020. [DOI: 10.1016/j.ccr.2020.213437] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/23/2022]
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46
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Niu Y, Yang C, Zhou T, Pan Y, Song J, Jiang J, Wang C. Enhanced Average Thermoelectric Figure of Merit of p-Type Zintl Phase Mg 2ZnSb 2 via Zn Vacancy Tuning and Hole Doping. ACS APPLIED MATERIALS & INTERFACES 2020; 12:37330-37337. [PMID: 32814413 DOI: 10.1021/acsami.0c09391] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Isoelectronic Zn substitution at the Mg site has been proved to be effective in regulating the carrier concentration of p-type Mg3Sb2 Zintl phase. However, the reported thermoelectric performance is still unsatisfactory compared with that of n-type Mg3Sb2 due to the poor electrical transport properties. Here, we report an enhanced average ZT through improving low-temperature ZTs by introducing Zn vacancy followed suppressing the bipolar effect by doping. First, the Zn vacancy simultaneously increases the power factor and decreases the thermal conductivity, leading to a peak ZT value of ∼0.52 at 773 K in Mg2Zn0.98Sb2. Additionally, doping Li or Ag at the Mg site is identified as a high-efficiency strategy for further increasing the carrier concentration and hence suppressing the bipolar effect. Finally, a peak ZT of ∼0.73 at 773 K and an average ZT of ∼0.46 between 300 and 773 K were obtained in Mg1.98Li0.02Zn0.98Sb2.
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Affiliation(s)
- Yi Niu
- Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Chengcheng Yang
- Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Ting Zhou
- Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Yan Pan
- Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jie Song
- Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Jing Jiang
- Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
| | - Chao Wang
- Clean Energy Materials and Engineering Center, State Key Laboratory of Electronic Thin Film and Integrated Device, School of Electronic Science and Engineering, University of Electronic Science and Technology of China, Chengdu 611731, China
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Jood P, Male JP, Anand S, Matsushita Y, Takagiwa Y, Kanatzidis MG, Snyder GJ, Ohta M. Na Doping in PbTe: Solubility, Band Convergence, Phase Boundary Mapping, and Thermoelectric Properties. J Am Chem Soc 2020; 142:15464-15475. [DOI: 10.1021/jacs.0c07067] [Citation(s) in RCA: 62] [Impact Index Per Article: 15.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Affiliation(s)
- Priyanka Jood
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
| | - James P. Male
- Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Shashwat Anand
- Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Yoshitaka Matsushita
- National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Yoshiki Takagiwa
- National Institute for Materials Science (NIMS), 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan
| | - Mercouri G. Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - G. Jeffrey Snyder
- Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Michihiro Ohta
- Global Zero Emission Research Center, National Institute of Advanced Industrial Science and Technology (AIST), 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
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48
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Zhang Q, Fang T, Liu F, Li A, Wu Y, Zhu T, Zhao X. Tuning Optimum Temperature Range of Bi
2
Te
3
‐Based Thermoelectric Materials by Defect Engineering. Chem Asian J 2020; 15:2775-2792. [DOI: 10.1002/asia.202000793] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/08/2020] [Indexed: 01/18/2023]
Affiliation(s)
- Qi Zhang
- State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
| | - Teng Fang
- State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
| | - Feng Liu
- State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
| | - Airan Li
- State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
| | - Yehao Wu
- State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
| | - Tiejun Zhu
- State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
| | - Xinbing Zhao
- State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China
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49
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Shan J, Wang S, Zhou F, Cui L, Zhang Y, Liu Z. Enhancing the Heat-Dissipation Efficiency in Ultrasonic Transducers via Embedding Vertically Oriented Graphene-Based Porcelain Radiators. NANO LETTERS 2020; 20:5097-5105. [PMID: 32492341 DOI: 10.1021/acs.nanolett.0c01304] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Ultrasonic transducers with large output power have attracted extensive attentions due to their widespread applications in sonar, acoustic levitation, ultrasonic focusing, and so forth. However, the traditional transducer has almost no heat-dissipation capability itself, strictly relying on the assistant coolant system. Introducing high-performance heat-dissipation component is thus highly necessary. Herein, an embedded porcelain radiator component was designed by combining the excellent thermal conductivity of vertically oriented graphene (VG) with the outstanding heat-dissipation characteristics of thermosensitive ceramics, and a new-type transducer with an embedded VG/ceramic-hybrid radiator was constructed to show high heat-dissipation efficiency (up to ∼5 °C/min). Remarkably, prominent heat-dissipation effectiveness (temperature decline of ∼12 °C), enhanced amplitude and vibration uniformity were also achieved for the new-type transducer along with stabilized operating states. This research should pave ways for extending the applications of VG/ceramic hybrids to heat-dissipation scenarios and provide newfangled thoughts for the performance upgrade of multitudinous high-power devices.
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Affiliation(s)
- Junjie Shan
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P.R. China
| | - Sha Wang
- Shannxi Key Laboratory of Ultrasonics, Shannxi Normal University, Shaanxi 710119, P.R. China
| | - Fan Zhou
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P.R. China
| | - Lingzhi Cui
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
| | - Yanfeng Zhang
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P.R. China
- Department of Materials Science and Engineering, College of Engineering, Peking University, Beijing 100871, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, P.R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P.R. China
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50
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Slade TJ, Pal K, Grovogui JA, Bailey TP, Male J, Khoury JF, Zhou X, Chung DY, Snyder GJ, Uher C, Dravid VP, Wolverton C, Kanatzidis MG. Contrasting SnTe–NaSbTe2 and SnTe–NaBiTe2 Thermoelectric Alloys: High Performance Facilitated by Increased Cation Vacancies and Lattice Softening. J Am Chem Soc 2020; 142:12524-12535. [DOI: 10.1021/jacs.0c05650] [Citation(s) in RCA: 32] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
Affiliation(s)
- Tyler J. Slade
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Koushik Pal
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Jann A. Grovogui
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Trevor P. Bailey
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - James Male
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Jason F. Khoury
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| | - Xiuquan Zhou
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - Duck Young Chung
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
| | - G. Jeffrey Snyder
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Ctirad Uher
- Department of Physics, University of Michigan, Ann Arbor, Michigan 48109, United States
| | - Vinayak P. Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Mercouri G. Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439, United States
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