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Singh B, Kim T, Hassan Y, Joe M, Watanabe K, Taniguchi T, Yoo WJ, Srivastava PK, Lee C. Topology-Driven Coulomb Drag in van der Waals Heterostructure with Broken Inversion Symmetry. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31247-31253. [PMID: 38844450 DOI: 10.1021/acsami.3c18655] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/22/2024]
Abstract
As Coulomb drag near charge neutrality (CN) is driven by fluctuations or inhomogeneity in charge density, the topology should play an extremely important role. Interlinking Coulomb drag and topology could reveal how the system's nontrivial topology influences the electron-electron interactions at the quantum level. However, such an aspect is overlooked as most studies focus on symmetric drag systems without topology. To understand this topological aspect, we need to study Coulomb drag in an asymmetric system with a broken inversion symmetry and strong spin-orbit coupling (SOC). Here we experimentally demonstrate the energy-driven Coulomb drag in an asymmetric van der Waals heterostructure composed of black phosphorus and rhenium disulfide characterized by broken inversion symmetry. Temperature-dependent transport measurements near CN provide compelling evidence for the energy-driven Coulomb drag due to electron-hole coupling that is energetically favored in a broken-gap heterojunction, as confirmed by Hall coefficient sign reversal with temperature. Moreover, contrary to the symmetric devices, our results exhibit magnetic-field-free, i.e., topology-driven, Hall drag, revealing an intrinsic coupling between energy and charge modes. This is the manifestation of nonzero Berry curvature, akin to a magnetic field in momentum space, in a Rashba system, which arises from the SOC and broken inversion symmetry of the heterostructure.
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Affiliation(s)
- Budhi Singh
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea
| | - Taewon Kim
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea
| | - Yasir Hassan
- Department of Materials Science and Engineering, Chungnam National University, 99, Daehak-ro, Yuseong-gu, Daejeon 34134, South Korea
| | - Minwoong Joe
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
| | - Won Jong Yoo
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea
| | | | - Changgu Lee
- School of Mechanical Engineering, Sungkyunkwan University, Suwon 16419, South Korea
- SKKU Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University, Suwon 16419, South Korea
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Momeni K, Sakib N, Figueroa DEC, Paul S, Chen CY, Lin YC, Robinson JA. Combined Experimental and Computational Insight into the Role of Substrate in the Synthesis of Two-Dimensional WSe 2. ACS APPLIED MATERIALS & INTERFACES 2024; 16:6644-6652. [PMID: 38264996 DOI: 10.1021/acsami.3c16761] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/25/2024]
Abstract
Synthesis of large-area transition-metal dichalcogenides (TMDs) with controlled orientation is a significant challenge to their industrial applications. Substrate plays a vital role in determining the final quality of monolayer materials grown via the chemical vapor deposition process by controlling their orientation, crystal structure, and grain boundary. This study determined the binding energy and equilibrium distance for tungsten diselenide (WSe2) monolayers on crystalline and amorphous silicon dioxide and aluminum dioxide substrates. Differently oriented WSe2 monolayers are considered to investigate the role of the substrate in the orientation, binding strength, and equilibrium distance. This study can pave the way to synthesizing high-quality two-dimensional (2D) materials for electronic and chemical applications.
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Affiliation(s)
- Kasra Momeni
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - Nuruzzaman Sakib
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
| | - Daniel E Cintron Figueroa
- Department of Chemistry, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Shiddartha Paul
- Department of Mechanical Engineering, The University of Alabama, Tuscaloosa, Alabama 35487, United States
- Department of Mechanical Engineering, The University of Illinois at Urbana-Champaign, Urbana, Illinois 61801, United States
| | - Cindy Y Chen
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
| | - Yu-Chuan Lin
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsin-Chu 30010, Taiwan
| | - Joshua A Robinson
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, United States
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Lattice Relaxation Forward Negative Coulomb Drag in Hopping Regime. ELECTRONICS 2022. [DOI: 10.3390/electronics11081273] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
Quasi-particle formed by electron and the dressed deformed lattice is important to accurately interpret the properties of various disordered/amorphous materials. However, a unified understanding of the drag effect, in particular the negative Coulomb drag in hopping systems, remains an open challenge. This work proposes a theoretic framework to account for both positive and negative Coulomb drag in dual-1D-hopping systems by considering both the electron-electron correlation and the electron-phonon correlation. It is found that lattice relaxation in the active line of the hopping system may give rise to an inverse energetic pumping force in the passive line, causing negative Coulomb drag. The mobility of the negative coulomb drag can approach the scale of 10−5cm2V−1s−1, especially at low temperature, high carrier-density, and narrow inter-spacing separation. More intriguingly, the positive drag could be recovered by varying the energy fluctuation and suppressing the electron-phonon interactions, but with a much lower magnitude. Our work could serve as a universal model for the Coulomb drag effect in the hopping system.
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Choi SH, Kim HJ, Song B, Kim YI, Han G, Nguyen HTT, Ko H, Boandoh S, Choi JH, Oh CS, Cho HJ, Jin JW, Won YS, Lee BH, Yun SJ, Shin BG, Jeong HY, Kim YM, Han YK, Lee YH, Kim SM, Kim KK. Epitaxial Single-Crystal Growth of Transition Metal Dichalcogenide Monolayers via the Atomic Sawtooth Au Surface. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2006601. [PMID: 33694212 DOI: 10.1002/adma.202006601] [Citation(s) in RCA: 36] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2020] [Revised: 01/29/2021] [Indexed: 06/12/2023]
Abstract
Growth of 2D van der Waals layered single-crystal (SC) films is highly desired not only to manifest the intrinsic physical and chemical properties of materials, but also to enable the development of unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has been successfully grown, an ideal growth platform for diatomic transition metal dichalcogenide (TMdC) films has not been established to date. Here, the SC growth of TMdC monolayers on a centimeter scale via the atomic sawtooth gold surface as a universal growth template is reported. The atomic tooth-gullet surface is constructed by the one-step solidification of liquid gold, evidenced by transmission electron microscopy. The anisotropic adsorption energy of the TMdC cluster, confirmed by density-functional calculations, prevails at the periodic atomic-step edge to yield unidirectional epitaxial growth of triangular TMdC grains, eventually forming the SC film, regardless of the Miller indices. Growth using the atomic sawtooth gold surface as a universal growth template is demonstrated for several TMdC monolayer films, including WS2 , WSe2 , MoS2 , the MoSe2 /WSe2 heterostructure, and W1- x Mox S2 alloys. This strategy provides a general avenue for the SC growth of diatomic van der Waals heterostructures on a wafer scale, to further facilitate the applications of TMdCs in post-silicon technology.
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Affiliation(s)
- Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyung-Jin Kim
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Bumsub Song
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yong In Kim
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyeongtak Han
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | | | - Hayoung Ko
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Stephen Boandoh
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Ji Hoon Choi
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Chang Seok Oh
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Hyun Je Cho
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Jeong Won Jin
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Byung Hoon Lee
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Seok Joon Yun
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Bong Gyu Shin
- Max-Planck Institute for Solid State Research, Heisenbergstrasse 1, 70569, Stuttgart, Germany
| | - Hu Young Jeong
- UNIST Central Research Facilities, School of Materials Science and Engineering, UNIST, Ulsan, 44919, Republic of Korea
| | - Young-Min Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Young-Kyu Han
- Department of Energy and Materials Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Young Hee Lee
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University, Seoul, 14072, Republic of Korea
| | - Ki Kang Kim
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University, Suwon, 16419, Republic of Korea
- Department of Energy Science, Sungkyunkwan University, Suwon, 16419, Republic of Korea
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