1
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Bashir R, Bilal MK, Bashir A, Asif SU, Peng Y. ZnO/SrTiO 3, ZnO/WO 3, and ZnO/Zn 2SnO 4 Bilayer as Electron Transport Layers for Lead Sulfide Colloidal Quantum Dots Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402500. [PMID: 39246184 DOI: 10.1002/smll.202402500] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/28/2024] [Revised: 08/21/2024] [Indexed: 09/10/2024]
Abstract
In order to enhance the overall efficiency of colloidal quantum dots solar cells, it is crucial to suppress the recombination of charge carriers and minimize energy loss at the interfaces between the transparent electrode, electron transport layer (ETL), and colloidal quantum dots (CQDs) light-absorbing material. In the current study, ZnO/SrTiO3 (STO), ZnO/WO3 (TO), and ZnO/Zn2SnO4 (ZTO) bilayers are introduced as an ETL using a spin-coating technique. The ZTO interlayer exhibits a smoother surface with a root-mean-square (RMS) value of ≈ 3.28 nm compared to STO and TO interlayers, which enables it to cover the surface of the ITO/ZnO substrate entirely and helps to prevent direct contact between the CQDs absorber layer and the ITO/ZnO substrate, thereby effectively preventing efficient charge recombination at the interfaces of the ETL/CQDs. Furthermore, the ZTO interlayer possesses superior electron mobility, a higher visible light transmission, and a suitable energy band structure compared to STO and TO. These characteristics are advantageous for extracting charge carriers and facilitating electron transport. The PbS CQDs solar cell based on the ITO/ZnO/ZTO/PbS-FABr/PbS-EDT/NiO/Au device configuration exhibits the highest efficiency of 15.28%, which is significantly superior than the ITO/ZnO/PbS-FABr/PbS-EDT/NiO/Au solar cell device (PCE = 14.38%). This study is anticipated to offer a practical approach to develop ultrathin and compact ETL for highly efficient CQDSCs.
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Affiliation(s)
- Rabia Bashir
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming, 650091, P. R. China
| | - Muhammad Kashif Bilal
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming, 650091, P. R. China
| | - Amna Bashir
- Department of Chemistry, Fatima Jinnah Women University, Rawalpindi, 46000, Pakistan
| | - Sana Ullah Asif
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming, 650091, P. R. China
| | - Yicheng Peng
- Yunnan Key Laboratory of Electromagnetic Materials and Devices, National Center for International Research on Photoelectric and Energy Materials, School of Materials and Energy, Yunnan University, Kunming, 650091, P. R. China
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2
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Li J, Zhang X, Liu Z, Wu H, Wang A, Luo Z, Wang J, Dong W, Wang C, Wen S, Dong Q, Yu WW, Zheng W. Optimizing Energy Levels and Improving Film Compactness in PbS Quantum Dot Solar Cells by Silver Doping. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311461. [PMID: 38386310 DOI: 10.1002/smll.202311461] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/09/2023] [Revised: 01/24/2024] [Indexed: 02/23/2024]
Abstract
PbS quantum dot (QD) solar cells harvest near-infrared solar radiation. Their conventional hole transport layer has limited hole collection efficiency due to energy level mismatch and poor film quality. Here, how to resolve these two issues by using Ag-doped PbS QDs are demonstrated. On the one hand, Ag doping relieves the compressive stress during layer deposition and thus improves film compactness and homogeneity to suppress leakage currents. On the other hand, Ag doping increases hole concentration, which aligns energy levels and increases hole mobility to boost hole collection. Increased hole concentration also broadens the depletion region of the active layer, decreasing interface charge accumulation and promoting carrier extraction efficiency. A champion power conversion efficiency of 12.42% is achieved by optimizing the hole transport layer in PbS QD solar cells, compared to 9.38% for control devices. Doping can be combined with compressive strain relief to optimize carrier concentration and energy levels in QDs, and even introduce other novel phenomena such as improved film quality.
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Affiliation(s)
- Jing Li
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012, China
| | - Xiaoyu Zhang
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012, China
| | - Zeke Liu
- Institute of Functional Nano & Soft Materials (FUNSOM), Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou, Jiangsu, 215123, China
| | - Hua Wu
- Department of Chemistry-Angström, Physical Chemistry, Uppsala University, Uppsala, 75120, Sweden
| | - Anran Wang
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - Zhao Luo
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012, China
| | - Jianxun Wang
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012, China
| | - Wei Dong
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012, China
| | - Chen Wang
- College of Electronic Science & Engineering, Jilin University, Changchun, 130012, China
| | - Shanpeng Wen
- College of Electronic Science & Engineering, Jilin University, Changchun, 130012, China
| | - Qingfeng Dong
- State Key Laboratory of Supramolecular Structure and Materials, College of Chemistry, Jilin University, Changchun, 130012, China
| | - William W Yu
- School of Chemistry & Chemical Engineering, Shandong University, Jinan, 250100, China
- Shandong Provincial Key Laboratory for Science of Material Creation and Energy Conversion, Science Center for Material Creation and Energy Conversion, Institute of Frontier and Interdisciplinary Science, Shandong University, Qingdao, 266237, China
| | - Weitao Zheng
- Key Laboratory of Automobile Materials, Ministry of Education, School of Materials Science and Engineering, Jilin Provincial International Cooperation Key Laboratory of High-Efficiency Clean Energy Materials, Jilin University, Changchun, 130012, China
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Zhang L, Chen Y, Cao S, Yuan D, Tang X, Wang D, Gao Y, Zhang J, Zhao Y, Yang X, Lu Z, Fan Q, Sun B. Interfacial Heterojunction Enables High Efficient PbS Quantum Dot Solar Cells. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2402756. [PMID: 38696647 PMCID: PMC11234412 DOI: 10.1002/advs.202402756] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/16/2024] [Revised: 04/13/2024] [Indexed: 05/04/2024]
Abstract
Colloidal quantum dots (CQDs) are promising optoelectronic materials for solution-processed thin film optoelectronic devices. However, the large surface area with abundant surface defects of CQDs and trap-assisted non-radiative recombination losses at the interface between CQDs and charge-transport layer limit their optoelectronic performance. To address this issue, an interface heterojunction strategy is proposed to protect the CQDs interface by incorporating a thin layer of polyethyleneimine (PEIE) to suppress trap-assisted non-radiative recombination losses. This thin layer not only acts as a protective barrier but also modulates carrier recombination and extraction dynamics by forming heterojunctions at the buried interface between CQDs and charge-transport layer, thereby enhancing the interface charge extraction efficiency. This enhancement is demonstrated by the shortened lifetime of carrier extraction from 0.72 to 0.46 ps. As a result, the resultant PbS CQD solar cells achieve a power-conversion-efficiency (PCE) of 13.4% compared to 12.2% without the heterojunction.
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Affiliation(s)
- Li Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
| | - Yong Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
| | - Shuang Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
| | - Defei Yuan
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
| | - Xu Tang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
| | - Dengke Wang
- Department of PhysicsCenter for Optoelectronics Engineering ResearchYunnan UniversityKunming650091China
| | - Yajun Gao
- LONGi Central R&D InstituteLONGi Green Energy Technology Co.Xi'anChina
| | - Junjie Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
| | - Yongbiao Zhao
- Department of PhysicsCenter for Optoelectronics Engineering ResearchYunnan UniversityKunming650091China
| | - Xichuan Yang
- Institute of Artificial PhotosynthesisState Key Laboratory of Fine ChemicalsDUT−KTH Joint Education and Research Centre on Molecular DevicesDalian University of Technology (DUT)2 Linggong Rd.Dalian116024China
| | - Zhenghong Lu
- Department of PhysicsCenter for Optoelectronics Engineering ResearchYunnan UniversityKunming650091China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM)School of Material Science and EngineeringNanjing University of Posts and Telecommunications (NJUPT)9 Wenyuan Rd.Nanjing210023China
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4
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Deng YH, Pang C, Kheradmand E, Leemans J, Bai J, Minjauw M, Liu J, Molkens K, Beeckman J, Detavernier C, Geiregat P, Van Thourhout D, Hens Z. Short-Wave Infrared Colloidal QD Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2402002. [PMID: 38657973 DOI: 10.1002/adma.202402002] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/06/2024] [Revised: 04/09/2024] [Indexed: 04/26/2024]
Abstract
Ultrafast short-wavelength infrared (SWIR) photodetection is of great interest for emerging automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out for SWIR photodetection compared to epitaxial (In,Ga)As or (Hg,Cd)Te semiconductors by their combining a size-tunable bandgap and a suitability for cost-effective, solution-based processing. However, achieving ultrafast, nanosecond-level response time has remained an outstanding challenge for QD-based SWIR photodiodes (QDPDs). Here, record 4 ns response time in PbS-based QDPDs that operate at SWIR wavelengths is reported, a result reaching the requirement of SWIR light detection and ranging based on colloidal QDs. These ultrafast QDPDs combine a thin active layer to reduce the carrier transport time and a small area to inhibit slow capacitive discharging. By implementing a concentration gradient ligand exchange method, high-quality p-n junctions are fabricated in these ultrathin QDPDs. Moreover, these ultrathin QDPDs attain an external quantum efficiency of 42% at 1330 nm, due to a 2.5-fold enhanced light absorption through the formation of a Fabry-Perot cavity within the QDPD and the highly efficient extraction (98%) of photogenerated charge carriers. Based on these results, it is estimated that a further increase of the charge-carrier mobility can lead to PbS QDPDs with sub-nanosecond response time.
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Affiliation(s)
- Yu-Hao Deng
- Physics and Chemistry of Nanostructures Group, Ghent University, Ghent, 9000, Belgium
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
| | - Chao Pang
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
- Photonics Research Group, Ghent University, Ghent, 9052, Belgium
| | - Ezat Kheradmand
- Physics and Chemistry of Nanostructures Group, Ghent University, Ghent, 9000, Belgium
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
| | - Jari Leemans
- Physics and Chemistry of Nanostructures Group, Ghent University, Ghent, 9000, Belgium
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
| | - Jing Bai
- Physics and Chemistry of Nanostructures Group, Ghent University, Ghent, 9000, Belgium
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
| | - Matthias Minjauw
- Department of Solid State Sciences, Ghent University, Ghent, 9000, Belgium
| | - Jiayi Liu
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
- Department of Electronics and Information Systems, Ghent University, Ghent, 9052, Belgium
| | - Korneel Molkens
- Physics and Chemistry of Nanostructures Group, Ghent University, Ghent, 9000, Belgium
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
- Photonics Research Group, Ghent University, Ghent, 9052, Belgium
| | - Jeroen Beeckman
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
- Department of Electronics and Information Systems, Ghent University, Ghent, 9052, Belgium
| | | | - Pieter Geiregat
- Physics and Chemistry of Nanostructures Group, Ghent University, Ghent, 9000, Belgium
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
| | - Dries Van Thourhout
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
- Photonics Research Group, Ghent University, Ghent, 9052, Belgium
| | - Zeger Hens
- Physics and Chemistry of Nanostructures Group, Ghent University, Ghent, 9000, Belgium
- Center for Nano and Biophotonics, Ghent University, Ghent, 9052, Belgium
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5
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Zhang L, Wang S, Shi Y, Xu J, Cao S, Deng Z, Chen Y, Zhang J, Yang X, Meng Z, Fan Q, Sun B. Organic hole transport materials for high performance PbS quantum dot solar cells. Chem Commun (Camb) 2024; 60:5294-5297. [PMID: 38659410 DOI: 10.1039/d4cc01194e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 04/26/2024]
Abstract
We developed a triazatruxene-based hole transport material (HTM), 3Ka-DBT-3Ka, aiming to enhance band alignment and augment charge generation and collection in devices, as an alternative for 1,2-ethanedithiol (EDT). The PbS CQD solar cells employing 3Ka-DBT-3Ka as the HTM achieve a peak efficiency of 11.4%, surpassing devices employing the conventional PbS-EDT HTM (8.9%).
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Affiliation(s)
- Li Zhang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Shunqiang Wang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Yi Shi
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Jiazi Xu
- Tengzhou Huashu Intelligent Manufacturing Academy, Zaozhuang, 277599, Shandong, China
| | - Shuang Cao
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Zijian Deng
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Rd., Dalian 116024, China
| | - Yong Chen
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Junjie Zhang
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Xichuan Yang
- Institute of Artificial Photosynthesis, State Key Laboratory of Fine Chemicals, DUT-KTH Joint Education and Research Centre on Molecular Devices, Dalian University of Technology (DUT), 2 Linggong Rd., Dalian 116024, China
| | - Zhen Meng
- School of Chemistry and Chemical Engineering, Nanjing University, Nanjing 210023, P. R. China
| | - Quli Fan
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
| | - Bin Sun
- State Key Laboratory of Organic Electronics and Information Displays, Institute of Advanced Materials (IAM), School of Material Science and Engineering, Nanjing University of Posts and Telecommunications (NJUPT), 9 Wenyuan Rd., Nanjing 210023, China
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Wei Y, Ding C, Shi G, Bi H, Li Y, Li H, Liu D, Yang Y, Wang D, Chen S, Wang R, Hayase S, Masuda T, Shen Q. Stronger Coupling of Quantum Dots in Hole Transport Layer Through Intermediate Ligand Exchange to Enhance the Efficiency of PbS Quantum Dot Solar Cells. SMALL METHODS 2024:e2400015. [PMID: 38607951 DOI: 10.1002/smtd.202400015] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/04/2024] [Revised: 03/18/2024] [Indexed: 04/14/2024]
Abstract
Nowadays, the extensively used lead sulfide (PbS) quantum dot (QD) hole transport layer (HTL) relies on layer-by-layer method to replace long chain oleic acid (OA) ligands with short 1,2-ethanedithiol (EDT) ligands for preparation. However, the inevitable significant volume shrinkage caused by this traditional method will result in undesired cracks and disordered QD arrangement in the film, along with adverse increased defect density and inhomogeneous energy landscape. To solve the problem, a novel method for EDT passivated PbS QD (PbS-EDT) HTL preparation using small-sized benzoic acid (BA) as intermediate ligands is proposed in this work. BA is substituted for OA ligands in solution followed by ligand exchange with EDT layer by layer. With the new method, smoother PbS-EDT films with more ordered and closer QD packing are gained. It is demonstrated stronger coupling between QDs and reduced defects in the QD HTL owing to the intermediate BA ligand exchange. As a result, the suppressed nonradiative recombination and enhanced carrier mobility are achieved, contributing to ≈20% growth in short circuit current density (Jsc) and a 23.4% higher power conversion efficiency (PCE) of 13.2%. This work provides a general framework for layer-by-layer QD film manufacturing optimization.
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Affiliation(s)
- Yuyao Wei
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Chao Ding
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu, 610065, P. R. China
| | - Guozheng Shi
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
- Institution of Functional Nano and Soft Materials, Soochow university, Suzhou, Jiangsu, 215123, P. R. China
| | - Huan Bi
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Yusheng Li
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Hua Li
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Dong Liu
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Yongge Yang
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Dandan Wang
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Shikai Chen
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Ruixiang Wang
- Beijing Engineering Research Centre of Sustainable Energy and Buildings, Beijing University of Civil Engineering and Architecture, Beijing, 102616, P. R. China
| | - Shuzi Hayase
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
| | - Taizo Masuda
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
- CN development division, Toyota Motor Corporation, Susono, Shizuoka, 410-1193, Japan
| | - Qing Shen
- Faculty of Informatics and Engineering, The University of Electro Communications, Tokyo, 1828585, Japan
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Yang B, Cang J, Li Z, Chen J. Nanocrystals as performance-boosting materials for solar cells. NANOSCALE ADVANCES 2024; 6:1331-1360. [PMID: 38419867 PMCID: PMC10898446 DOI: 10.1039/d3na01063e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 11/29/2023] [Accepted: 01/31/2024] [Indexed: 03/02/2024]
Abstract
Nanocrystals (NCs) have been widely studied owing to their distinctive properties and promising application in new-generation photoelectric devices. In photovoltaic devices, semiconductor NCs can act as efficient light harvesters for high-performance solar cells. Besides light absorption, NCs have shown great significance as functional layers for charge (hole and electron) transport and interface modification to improve the power conversion efficiency and stability of solar cells. NC-based functional layers can boost hole/electron transport ability, adjust energy level alignment between a light absorbing layer and charge transport layer, broaden the absorption range of an active layer, enhance intrinsic stability, and reduce fabrication cost. In this review, recent advances in NCs as a hole transport layer, electron transport layer, and interfacial layer are discussed. Additionally, NC additives to improve the performance of solar cells are demonstrated. Finally, a summary and future prospects of NC-based functional materials in solar cells are presented, addressing their limitations and suggesting potential solutions.
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Affiliation(s)
- Boping Yang
- College of Science, Guizhou Institute of Technology Guiyang 550003 China
| | - Junjie Cang
- School of Electrical Engineering, Yancheng Institute of Technology Yancheng 224051 China
| | - Zhiling Li
- College of Science, Guizhou Institute of Technology Guiyang 550003 China
| | - Jian Chen
- College of Artificial Intelligence and Electrical Engineering, Guizhou Institute of Technology Guiyang 550003 China
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8
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Jia Y, Wang H, Wang Y, Wang C, Li X, Kubo T, Liu Y, Zhang X, Segawa H. Ultra-Thin SnO x Buffer Layer Enables High-Efficiency Quantum Junction Photovoltaics. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2204725. [PMID: 36285698 PMCID: PMC9799018 DOI: 10.1002/advs.202204725] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/28/2022] [Revised: 09/19/2022] [Indexed: 06/16/2023]
Abstract
Solution-processed solar cells are promising for the cost-effective, high-throughput production of photovoltaic devices. Colloidal quantum dots (CQDs) are attractive candidate materials for efficient, solution-processed solar cells, potentially realizing the broad-spectrum light utilization and multi-exciton generation effect for the future efficiency breakthrough of solar cells. The emerging quantum junction solar cells (QJSCs), constructed by n- and p-type CQDs only, open novel avenue for all-quantum-dot photovoltaics with a simplified device configuration and convenient processing technology. However, the development of high-efficiency QJSCs still faces the challenge of back carrier diffusion induced by the huge carrier density drop at the interface of CQDs and conductive glass substrate. Herein, an ultra-thin atomic layer deposited tin oxide (SnOx ) layer is employed to buffer this carrier density drop, significantly reducing the interfacial recombination and capacitance caused by the back carrier diffusion. The SnOx -modified QJSC achieves a record-high efficiency of 11.55% and a suppressed hysteresis factor of 0.04 in contrast with reference QJSC with an efficiency of 10.4% and hysteresis factor of 0.48. This work clarifies the critical effect of interfacial issues on the carrier recombination and hysteresis of QJSCs, and provides an effective pathway to design high-performance all-quantum-dot devices.
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Affiliation(s)
- Yuwen Jia
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Haibin Wang
- Graduate School of Arts and SciencesThe University of TokyoTokyo153–8902Japan
| | - Yinglin Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Chao Wang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Xiaofei Li
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Takaya Kubo
- Research Center for Advanced Science and TechnologyThe University of TokyoTokyo153–8904Japan
| | - Yichun Liu
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Xintong Zhang
- Center for Advanced Optoelectronic Functional Materials Researchand Key Laboratory of UV Light‐Emitting Materials and Technology of Ministry of EducationNortheast Normal UniversityChangchunJilin130024P.R. China
| | - Hiroshi Segawa
- Graduate School of Arts and SciencesThe University of TokyoTokyo153–8902Japan
- Research Center for Advanced Science and TechnologyThe University of TokyoTokyo153–8904Japan
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9
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Zhang Y, Vafaie M, Xu J, Pina JM, Xia P, Najarian AM, Atan O, Imran M, Xie K, Hoogland S, Sargent EH. Electron-Transport Layers Employing Strongly Bound Ligands Enhance Stability in Colloidal Quantum Dot Infrared Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2206884. [PMID: 36134538 DOI: 10.1002/adma.202206884] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Revised: 09/04/2022] [Indexed: 06/16/2023]
Abstract
Solution-processed photodetectors based on colloidal quantum dots (CQDs) are promising candidates for short-wavelength infrared light sensing applications. Present-day CQD photodetectors employ a CQD active layer sandwiched between carrier-transport layers in which the electron-transport layer (ETL) is composed of metal oxides. Herein, a new class of ETLs is developed using n-type CQDs, finding that these benefit from quantum-size effect tuning of the band energies, as well as from surface ligand engineering. Photodetectors operating at 1450 nm are demonstrated using CQDs with tailored functionalities for each of the transport layers and the active layer. By optimizing the band alignment between the ETL and the active layer, CQD photodetectors that combine a low dark current of ≈1 × 10-3 mA cm-2 with a high external quantum efficiency of ≈66% at 1 V are reported, outperforming prior reports of CQD photodetectors operating at >1400 nm that rely on metal oxides as ETLs. It is shown that stable CQD photodetectors rely on well-passivated CQDs: for ETL CQDs, a strongly bound organic ligand trans-4-(trifluoromethyl)cinnamic acid (TFCA) provides improved passivation compared to the weakly bound inorganic ligand tetrabutylammonium iodide (TBAI). TFCA suppresses bias-induced ion migration inside the ETL and improves the operating stability of photodetectors by 50× compared to TBAI.
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Affiliation(s)
- Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Jian Xu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Amin M Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Ke Xie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, Toronto, Ontario, M5S 3G4, Canada
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10
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Zhang J, Li X, Liu Y, Feng J, Zhao J, Geng Y, Gao H, Wang T, Yang W, Jiang L, Wu Y. Confined Assembly of Colloidal Nanorod Superstructures by Locally Controlling Free-Volume Entropy in Nonequilibrium Fluids. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2202119. [PMID: 35522854 DOI: 10.1002/adma.202202119] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/07/2022] [Revised: 04/18/2022] [Indexed: 06/14/2023]
Abstract
Long-range-ordered structures of nanoparticles with controllable orientation have advantages in applications toward sensors, photoelectric conversion, and field-effect transistors. The assembly process of nanorods in colloidal systems undergoes a nonequilibrium process from dispersion to aggregation. A variety of assembly methods such as solvent volatilization, electromagnetic field induction, and photoinduction are restricted to suppress local perturbations during the nonequilibrium concentration of nanoparticles, which are adverse to controlling the orientation and order of assembled structures. Here, a confined assembly method is reported by locally controlling free-volume entropy in nonequilibrium fluids to fabricate microstructure arrays based on colloidal nanorods with controllable orientation and long-range order. The unique fluid dynamics of the liquid bridge is utilized to form a local region, where the free volume entropy reduction triggers assembly near the three-phase contact line (TPCL), allowing nanorods to assemble in 2D closest packing parallel to the TPCL for the maximum Gibbs free energy reduction. By manipulating the orientation of liquid flow, microstructures are assembled with programmable geometry, which sustains polarized photoluminescence and polarization-dependent photodetection. This confined assembly method opens up perspectives on assemblies of nanomaterials with controllable orientation and long-range order as a platform for multifunctional integrated devices.
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Affiliation(s)
- Jingyuan Zhang
- College of Chemistry, Jilin University, Changchun, Jilin, 130012, P. R. China
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Xiao Li
- Life and Health Research Institute, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Yawei Liu
- Beijing Key Laboratory of Ionic Liquids Clean Process, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Jiangang Feng
- Department of Chemical and Biomolecular Sciences, National University of Singapore, Singapore, 117585, Singapore
| | - Jinjin Zhao
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Yue Geng
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
| | - Hanfei Gao
- Ji Hua Laboratory, Foshan, Guangdong, 528200, P. R. China
| | - Tie Wang
- Life and Health Research Institute, School of Chemistry and Chemical Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Wensheng Yang
- College of Chemistry, Jilin University, Changchun, Jilin, 130012, P. R. China
| | - Lei Jiang
- College of Chemistry, Jilin University, Changchun, Jilin, 130012, P. R. China
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Ji Hua Laboratory, Foshan, Guangdong, 528200, P. R. China
| | - Yuchen Wu
- Key Laboratory of Bio-Inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Ji Hua Laboratory, Foshan, Guangdong, 528200, P. R. China
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11
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Gong W, Wang P, Deng W, Zhang X, An B, Li J, Sun Z, Dai D, Liu Z, Li J, Zhang Y. Limiting Factors of Detectivity in Near-Infrared Colloidal Quantum Dot Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:25812-25823. [PMID: 35616595 DOI: 10.1021/acsami.2c06620] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Lead sulfide colloidal quantum dots (PbS CQDs) have shown great potential in photodetectors owing to their promising optical properties, especially their strong and tunable absorption. However, the limitation of the specific detectivity (D*) in CQD near-infrared (NIR) photodetectors remains unknown due to the ambiguous noise analysis. Therefore, a clear understanding of the noise current is critically demanded. Here, we elucidate that the noise current is the predominant factor limiting D*, and the noise is highly dependent on the trap densities in halide-passivated PbS films and the carriers injected from the Schottky contact (EDT-passivated PbS films/metal). It is found that the thickness of CQDs is proportional to their interface trap density, while it is inversely proportional to their minimal bulk trap density. A balance point can be reached at a certain thickness (136 nm) to minimize the trap density, giving rise to the improvement of D*. Utilizing thicker PbS-EDT films broadens the width of the tunneling barrier and thereby reduces the carrier injection, contributing to a further enhancement of D*. The limiting factors of D* determined in this work not only explain the physical mechanism of the influence on detection sensitivity but also give guidance to the design of high-performance CQD photodetectors.
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Affiliation(s)
- Wei Gong
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Peng Wang
- Faculty of Information Technology, Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Wenjie Deng
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Xiaobo Zhang
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Boxing An
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Jingjie Li
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Zhaoqing Sun
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Dichao Dai
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Zekang Liu
- Faculty of Materials and Manufacturing, Key Laboratory of Advanced Functional Materials, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Jingzhen Li
- Faculty of Information Technology, Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
| | - Yongzhe Zhang
- Faculty of Information Technology, Key Laboratory of Opto-Electronics Technology, Ministry of Education, Beijing University of Technology, Beijing 100124, China
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12
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Liu J, Qiao J, Zhou K, Wang J, Gui R, Xian K, Gao M, Yin H, Hao X, Zhou Z, Ye L. An Aggregation-Suppressed Polymer Blending Strategy Enables High-Performance Organic and Quantum Dot Hybrid Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201387. [PMID: 35417057 DOI: 10.1002/smll.202201387] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/03/2022] [Revised: 03/27/2022] [Indexed: 06/14/2023]
Abstract
Solution-processing hybrid solar cells with organics and colloidal quantum dots (CQDs) have drawn substantial attention in the past decade. Nevertheless, hybrid solar cells based on the recently developed directly synthesized CQD inks are still unexplored. Herein, a facile polymer blending strategy is put forward to enable directly synthesized CQD/polymer hybrid solar cells with a champion efficiency of 13%, taking advantage of the conjugated polymer blends with finely optimized aggregation behaviors. The spectroscopic and electrical investigations on carrier transport and recombination indicate that polymer blends can endow fast carrier transport and less recombination over the single counterparts. Moreover, the blending strategy offers a "dilution effect" for top-notch photovoltaic polymers with excessively strong aggregation tendency, resulting in moderate feature domain size and surface roughness, which afford fast hole transport and therefore high photovoltaic performance. The effectiveness of this strategy is successfully validated using two pairs of photovoltaic polymers. Accordingly, the relationships between polymer morphology, carrier transport, and photovoltaic performance are established to advance the progress of CQD/polymer hybrid solar cells. Such progress stresses that the utilization of aggregation-suppressed polymer blends is a facile approach toward the fabrication of high-efficiency organic-inorganic hybrid solar cells.
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Affiliation(s)
- Junwei Liu
- School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
| | - Jiawei Qiao
- School of Physics, Shandong University, Jinan, 250100, China
| | - Kangkang Zhou
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Jingjing Wang
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Ruohua Gui
- School of Physics, Shandong University, Jinan, 250100, China
| | - Kaihu Xian
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Mengyuan Gao
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
| | - Hang Yin
- School of Physics, Shandong University, Jinan, 250100, China
| | - Xiaotao Hao
- School of Physics, Shandong University, Jinan, 250100, China
| | - Zhihua Zhou
- School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Long Ye
- School of Materials Science and Engineering, Tianjin Key Laboratory of Molecular Optoelectronic Sciences, Tianjin University, Tianjin, 300350, China
- State Key Laboratory of Applied Optics, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, 130033, China
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13
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Yang J, Cho SC, Lee S, Yoon JW, Jeong WH, Song H, Oh JT, Lim SG, Bae SY, Lee BR, Ahmadi M, Sargent EH, Yi W, Lee SU, Choi H. Guanidinium-Pseudohalide Perovskite Interfaces Enable Surface Reconstruction of Colloidal Quantum Dots for Efficient and Stable Photovoltaics. ACS NANO 2022; 16:1649-1660. [PMID: 35025199 DOI: 10.1021/acsnano.1c10636] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Complete surface passivation of colloidal quantum dots (CQDs) and their strong electronic coupling are key factors toward high-performance CQD-based photovoltaics (CQDPVs). Also, the CQD matrices must be protected from oxidative environments, such as ambient air and moisture, to guarantee air-stable operation of the CQDPVs. Herein, we devise a complementary and effective approach to reconstruct the oxidized CQD surface using guanidinium and pseudohalide. Unlike conventional halides, thiocyanate anions provide better surface passivation with effective replacement of surface oxygen species and additional filling of defective sites, whereas guanidinium cations promote the construction of epitaxial perovskite bridges within the CQD matrix and augment electronic coupling. Additionally, we replace a defective 1,2-ethanedithiol-treated CQD hole transport layer (HTL) with robust polymeric HTLs, based on a judicious consideration of the energy level alignment established at the CQD/HTL interface. These efforts collectively result in high-performance and stable CQDPVs with photocurrents over 30 mA cm-2, ∼80% quantum efficiency at excitonic peaks and stable operation under humid and ambient conditions. Elucidation of carrier dynamics further reveals that interfacial recombination associated with band alignment governs both the CQDPV performance and stability.
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Affiliation(s)
- Jonghee Yang
- Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Seong Chan Cho
- Department of Applied Chemistry, Center for Bionano Intelligence Education and Research, Hanyang University, Ansan 15588, Republic of Korea
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Jung Won Yoon
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Woo Hyeon Jeong
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Hochan Song
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Taek Oh
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Seul Gi Lim
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Sung Yong Bae
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Bo Ram Lee
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea
| | - Mahshid Ahmadi
- Institute for Advanced Materials and Manufacturing, Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996, United States
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Whikun Yi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Sang Uck Lee
- Department of Applied Chemistry, Center for Bionano Intelligence Education and Research, Hanyang University, Ansan 15588, Republic of Korea
| | - Hyosung Choi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Science, Hanyang University, Seoul 04763, Republic of Korea
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14
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Yuan M, Wang X, Chen X, He J, Li K, Song B, Hu H, Gao L, Lan X, Chen C, Tang J. Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2102340. [PMID: 34561947 DOI: 10.1002/smll.202102340] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/22/2021] [Revised: 07/23/2021] [Indexed: 06/13/2023]
Abstract
Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.
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Affiliation(s)
- Mohan Yuan
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xia Wang
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Xiao Chen
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Jungang He
- Hubei Key Laboratory of Plasma Chemistry and Advanced Materials, School of Materials Science and Engineering, Wuhan Institute of Technology, Wuhan, 430205, P. R. China
| | - Kanghua Li
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Huicheng Hu
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Liang Gao
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Xinzheng Lan
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Chao Chen
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO), Huazhong University of Science and Technology, 1037 Luoyu Road, Wuhan, Hubei, 430074, P. R. China
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15
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Wang W, Zhang M, Pan Z, Biesold GM, Liang S, Rao H, Lin Z, Zhong X. Colloidal Inorganic Ligand-Capped Nanocrystals: Fundamentals, Status, and Insights into Advanced Functional Nanodevices. Chem Rev 2021; 122:4091-4162. [PMID: 34968050 DOI: 10.1021/acs.chemrev.1c00478] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Colloidal nanocrystals (NCs) are intriguing building blocks for assembling various functional thin films and devices. The electronic, optoelectronic, and thermoelectric applications of solution-processed, inorganic ligand (IL)-capped colloidal NCs are especially promising as the performance of related devices can substantially outperform their organic ligand-capped counterparts. This in turn highlights the significance of preparing IL-capped NC dispersions. The replacement of initial bulky and insulating ligands capped on NCs with short and conductive inorganic ones is a critical step in solution-phase ligand exchange for preparing IL-capped NCs. Solution-phase ligand exchange is extremely appealing due to the highly concentrated NC inks with completed ligand exchange and homogeneous ligand coverage on the NC surface. In this review, the state-of-the-art of IL-capped NCs derived from solution-phase inorganic ligand exchange (SPILE) reactions are comprehensively reviewed. First, a general overview of the development and recent advancements of the synthesis of IL-capped colloidal NCs, mechanisms of SPILE, elementary reaction principles, surface chemistry, and advanced characterizations is provided. Second, a series of important factors in the SPILE process are offered, followed by an illustration of how properties of NC dispersions evolve after ILE. Third, surface modifications of perovskite NCs with use of inorganic reagents are overviewed. They are necessary because perovskite NCs cannot withstand polar solvents or undergo SPILE due to their soft ionic nature. Fourth, an overview of the research progresses in utilizing IL-capped NCs for a wide range of applications is presented, including NC synthesis, NC solid and film fabrication techniques, field effect transistors, photodetectors, photovoltaic devices, thermoelectric, and photoelectrocatalytic materials. Finally, the review concludes by outlining the remaining challenges in this field and proposing promising directions to further promote the development of IL-capped NCs in practical application in the future.
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Affiliation(s)
- Wenran Wang
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Meng Zhang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Zhenxiao Pan
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Gill M Biesold
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Shuang Liang
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Huashang Rao
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
| | - Zhiqun Lin
- School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332, United States
| | - Xinhua Zhong
- Key Laboratory for Biobased Materials and Energy of Ministry of Education, College of Materials and Energy, South China Agricultural University, 483 Wushan Road, Guangzhou 510642, China.,Guangdong Laboratory for Lingnan Modern Agriculture, Guangzhou 510642, China
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16
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Yang J, Kim M, Lee S, Yoon JW, Shome S, Bertens K, Song H, Lim SG, Oh JT, Bae SY, Lee BR, Yi W, Sargent EH, Choi H. Solvent Engineering of Colloidal Quantum Dot Inks for Scalable Fabrication of Photovoltaics. ACS APPLIED MATERIALS & INTERFACES 2021; 13:36992-37003. [PMID: 34333973 DOI: 10.1021/acsami.1c06352] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Development of colloidal quantum dot (CQD) inks enables single-step spin-coating of compact CQD films of appropriate thickness, enabling the promising performance of CQD photovoltaics (CQDPVs). Today's highest-performing CQD inks rely on volatile n-butylamine (BTA), but it is incompatible with scalable deposition methods since a rapid solvent evaporation results in irregular film thickness with an uneven surface. Here, we present a hybrid solvent system, consisting of BTA and N,N-dimethylformamide, which has a favorable acidity for colloidal stability as well as an appropriate vapor pressure, enabling a stable CQD ink that can be used to fabricate homogeneous, large-area CQD films via spray-coating. CQDPVs fabricated with the CQD ink exhibit suppressed charge recombination as well as fast charge extraction compared with conventional CQD ink-based PVs, achieving an improved power conversion efficiency (PCE) of 12.22% in spin-coated devices and the highest ever reported PCE of 8.84% among spray-coated CQDPVs.
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Affiliation(s)
- Jonghee Yang
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Minseon Kim
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Jung Won Yoon
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Sanchari Shome
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Koen Bertens
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Hochan Song
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Seul Gi Lim
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Taek Oh
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Sung Yong Bae
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
| | - Bo Ram Lee
- Department of Physics, Pukyong National University, Busan 608-737, Republic of Korea
| | - Whikun Yi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, Toronto, Ontario M5S 3G4, Canada
| | - Hyosung Choi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
- Institute of Nano Science & Technology, Hanyang University, Seoul 04763, Republic of Korea
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17
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Liu J, Xian K, Ye L, Zhou Z. Open-Circuit Voltage Loss in Lead Chalcogenide Quantum Dot Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2008115. [PMID: 34085736 DOI: 10.1002/adma.202008115] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2020] [Revised: 01/09/2021] [Indexed: 06/12/2023]
Abstract
Lead chalcogenide colloidal quantum dot solar cells (CQDSCs) have received considerable attention due to their broad and tunable absorption and high stability. Presently, lead chalcogenide CQDSC has achieved a power conversion efficiency of ≈14%. However, the state-of-the-art lead chalcogenide CQDSC still has an open-circuit voltage (Voc ) loss of ≈0.45 V, which is significantly higher than those of c-Si and perovskite solar cells. Such high Voc loss severely limits the performance improvement and commercialization of lead chalcogenide CQDSCs. In this review, the Voc loss is first analyzed via detailed balance theory and the origin of Voc loss from both solar absorber and interface is summarized. Subsequently, various strategies for improving the Voc from the solar absorber, including the passivation strategies during the synthesis and ligand exchange are overviewed. The great impact of the ligand exchange process on CQD passivation is highlighted and the corresponding strategies to further reduce the Voc loss are summarized. Finally, various strategies are discussed to reduce interface Voc loss from charge transport layers. More importantly, the great potential of achieving performance breakthroughs via various organic hole transport layers is highlighted and the existing challenges toward commercialization are discussed.
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Affiliation(s)
- Junwei Liu
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Kaihu Xian
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Long Ye
- School of Materials Science and Engineering, Tianjin University, Tianjin, 300350, China
| | - Zhihua Zhou
- Tianjin Key Laboratory of Indoor Air Environmental Quality Control, School of Environmental Science and Engineering, Tianjin University, Tianjin, 300350, China
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18
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Becker-Koch D, Albaladejo-Siguan M, Hofstetter YJ, Solomeshch O, Pohl D, Rellinghaus B, Tessler N, Vaynzof Y. Doped Organic Hole Extraction Layers in Efficient PbS and AgBiS 2 Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2021; 13:18750-18757. [PMID: 33855853 DOI: 10.1021/acsami.1c01462] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/25/2023]
Abstract
The efficiency of PbS quantum dot (QD) solar cells has significantly increased in recent years, strengthening their potential for industrial applications. The vast majority of state-of-the-art devices utilize 1,2-ethanedithiol (EDT)-coated PbS QD hole extraction layers, which lead to high initial performance, but result in poor device stability. While excellent performance has also been demonstrated with organic extraction layers, these devices include a molybdenum trioxide (MoO3) layer, which is also known to decrease device stability. Herein, we demonstrate that organic layers based on a poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTAA) polymer doped with C60F48 can serve as hole extraction layers for efficient EDT-free and MoO3-free QD solar cells. Such layers are shown to offer high conductivity for facile hole transport to the anode, while effectively blocking electrons due to their low electron affinity. We show that our approach is versatile and is applicable also to AgBiS2 QD solar cells.
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Affiliation(s)
- David Becker-Koch
- Integrated Center for Applied Physics and Photonic Materials (IAPP) and Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Nöthnitzer Straße 61, Dresden 01187, Germany
| | - Miguel Albaladejo-Siguan
- Integrated Center for Applied Physics and Photonic Materials (IAPP) and Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Nöthnitzer Straße 61, Dresden 01187, Germany
| | - Yvonne J Hofstetter
- Integrated Center for Applied Physics and Photonic Materials (IAPP) and Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Nöthnitzer Straße 61, Dresden 01187, Germany
| | - Olga Solomeshch
- Electrical Engineering Department, Nanoelectronic Center, Technion, Haifa 32000, Israel
| | - Darius Pohl
- Dresden Center for Nanoanalysis (DCN) and Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden 01062, Germany
| | - Bernd Rellinghaus
- Dresden Center for Nanoanalysis (DCN) and Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Dresden 01062, Germany
| | - Nir Tessler
- Electrical Engineering Department, Nanoelectronic Center, Technion, Haifa 32000, Israel
| | - Yana Vaynzof
- Integrated Center for Applied Physics and Photonic Materials (IAPP) and Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, Nöthnitzer Straße 61, Dresden 01187, Germany
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19
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Efficient PbS Quantum Dot Solar Cells with Both Mg-Doped ZnO Window Layer and ZnO Nanocrystal Interface Passivation Layer. NANOMATERIALS 2021; 11:nano11010219. [PMID: 33467785 PMCID: PMC7830923 DOI: 10.3390/nano11010219] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/30/2020] [Revised: 01/12/2021] [Accepted: 01/13/2021] [Indexed: 11/16/2022]
Abstract
In this paper, a Mg-doped ZnO (MZO) thin film is prepared by a simple solution process under ambient conditions and is used as the window layer for PbS solar cells due to a wide n-type bandgap. Moreover, a thin layer of ZnO nanocrystals (NCs) was deposited on the MZO to reduce carrier recombination at the interface for inverted PbS quantum dot solar cells with the configuration Indium Tin Oxides (ITO)/MZO/ZnO NC (w/o)/PbS/Au. The effect of film thickness and annealing temperature of MZO and ZnO NC on the performance of PbS quantum dot solar cells was investigated in detail. It was found that without the ZnO NC thin layer, the highest power conversion efficiency(PCE) of 5.52% was obtained in the case of a device with an MZO thickness of 50 nm. When a thin layer of ZnO NC was introduced between MZO and PbS quantum dot film, the PCE of the champion device was greatly improved to 7.06% due to the decreased interface recombination. The usage of the MZO buffer layer along with the ZnO NC interface passivation technique is expected to further improve the performance of quantum dot solar cells.
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20
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Liu Y, Shi G, Liu Z, Ma W. Toward printable solar cells based on PbX colloidal quantum dot inks. NANOSCALE HORIZONS 2021; 6:8-23. [PMID: 33174558 DOI: 10.1039/d0nh00488j] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Lead chalcogenide (PbX, X = S, Se) colloidal quantum dots (CQDs) are promising solution-processed semiconductor materials for the construction of low-cost, large-area, and flexible solar cells. The properties of CQDs endow them with advantages in semi-conducting film deposition compared to other solution-processed photovoltaic materials, which is critical for the fabrication of efficient large-area solar cells towards industrialization. However, the development of large-area CQD solar cells is impeded by the conventional solid-state ligand exchange process, where the tedious processing with high expense is indispensable to facilitate charge transport of CQD films for photovoltaic applications. In the past several years, the rapid development of CQD inks has boosted the device performance and dramatically simplified the fabrication process. The CQD inks are compatible with most of the industrialized printing techniques, demonstrating potential in fabricating solar modules for commercialization. This article aims to review the recent advances in solar cells based on PbX CQD inks, including both lab-scale and large-area photovoltaic devices prepared from solution-phase ligand exchange (SPLE) as well as the recently invented "one-step" synthesis. We expect to draw attention to the enormous potential of CQD inks for developing high-efficiency and low-cost large-area photovoltaics.
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Affiliation(s)
- Yang Liu
- Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Institute of Functional Nano & Soft Materials (FUNSOM), Soochow University, 199 Ren-Ai Road, Suzhou Industrial Park, Suzhou, 215123 Jiangsu, P. R. China.
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21
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Kim C, Baek SW, Kim J, Kim B, Lee C, Park JY, Lee JY. Role of Oxygen in Two-Step Thermal Annealing Processes for Enhancing the Performance of Colloidal Quantum Dot Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2020; 12:57840-57846. [PMID: 33320537 DOI: 10.1021/acsami.0c14903] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Colloidal quantum dots (CQDs) have large surface-to-volume ratios; thus, surface control is critical, especially when CQDs are utilized in optoelectronic devices. Layer-by-layer solid-state ligand exchange is a facile and applicable process for the formation of conductive CQD solids through various ligands; however, achieving complete ligand exchange on the CQD surface without dangling bonds is challenging. Herein, we demonstrate that CQDs can be further passivated through two-step annealing; air annealing forms sulfonate bonding at (111) Pb-rich surfaces, and subsequent N2 annealing removes insulating oxygen layers from the (100) surfaces of CQDs. By subsequently conducting annealing treatment in two different environments, traps on the surface of CQDs could be significantly reduced. We achieved a 40.8% enhancement of the power conversion efficiency by optimizing each two-step annealing process.
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Affiliation(s)
- Changjo Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Se-Woong Baek
- Department of Chemical and Biological Engineering, Korea University, Seoul 02481, Republic of Korea
| | - Junho Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Byeongsu Kim
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Changhwan Lee
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Jeong Young Park
- Department of Chemistry, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Jung-Yong Lee
- School of Electrical Engineering (EE), Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
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22
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Yang J, Oh JT, Kim M, Song H, Boukhvalov DW, Lee SH, Choi H, Yi W. Hybrid Surface Passivation for Retrieving Charge Collection Efficiency of Colloidal Quantum Dot Photovoltaics. ACS APPLIED MATERIALS & INTERFACES 2020; 12:43576-43585. [PMID: 32876435 DOI: 10.1021/acsami.0c10077] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Efficient charge collection in photovoltaics is a key issue toward their high performance. Despite the promising performance of colloidal quantum dot (CQD)-based photovoltaics (CQDPVs), they suffer significant dissipation of photocurrent due to imperfect surface passivation of the CQD hole transport layer (HTL) by a single 1,2-ethaneditihol (EDT) ligand. To address the critical drawback of existing CQDPVs, we offer a hybrid passivation strategy, including both EDT and thiocyanate (SCN). The hybrid passivation leads to seamless surface passivation of CQDs, remarkably suppressing charge recombination. This strategy also augments the p-doping density of the CQD, resulting in a pronounced energy level bending at the active layer/HTL interface and facilitating efficient charge separation. Moreover, enhanced electronic coupling across the CQDs (originating from reduced inter-dot spacing) promotes rapid charge extraction. Consequently, the flawless charge collection by a hybrid-passivated HTL successfully retrieves the photocurrent, achieving an enhanced CQDPV power conversion efficiency of 12.70% compared with 11.49% for the control device.
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Affiliation(s)
- Jonghee Yang
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Jae Taek Oh
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Minseon Kim
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Hochan Song
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Danil W Boukhvalov
- College of Science, Institute of Material Physics and Chemistry, Nanjing Forestry University, Nanjing 210037, China
- Institute of Physics and Technology, Ural Federal University, Mira str. 19, Yekaterinburg 620002, Russia
| | - Seung Hyun Lee
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Hyosung Choi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Convergence of Basic Sciences, Hanyang University, Seoul 04763, Republic of Korea
| | - Whikun Yi
- Department of Chemistry, Hanyang University, Seoul 04763, Republic of Korea
- Research Institute for Natural Sciences, Hanyang University, Seoul 04763, Republic of Korea
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23
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Lee S, Choi MJ, Sharma G, Biondi M, Chen B, Baek SW, Najarian AM, Vafaie M, Wicks J, Sagar LK, Hoogland S, de Arquer FPG, Voznyy O, Sargent EH. Orthogonal colloidal quantum dot inks enable efficient multilayer optoelectronic devices. Nat Commun 2020; 11:4814. [PMID: 32968078 PMCID: PMC7511352 DOI: 10.1038/s41467-020-18655-7] [Citation(s) in RCA: 17] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/02/2020] [Accepted: 09/01/2020] [Indexed: 12/02/2022] Open
Abstract
Surface ligands enable control over the dispersibility of colloidal quantum dots (CQDs) via steric and electrostatic stabilization. Today’s device-grade CQD inks have consistently relied on highly polar solvents: this enables facile single-step deposition of multi-hundred-nanometer-thick CQD films; but it prevents the realization of CQD film stacks made up of CQDs having different compositions, since polar solvents redisperse underlying films. Here we introduce aromatic ligands to achieve process-orthogonal CQD inks, and enable thereby multifunctional multilayer CQD solids. We explore the effect of the anchoring group of the aromatic ligand on the solubility of CQD inks in weakly-polar solvents, and find that a judicious selection of the anchoring group induces a dipole that provides additional CQD-solvent interactions. This enables colloidal stability without relying on bulky insulating ligands. We showcase the benefit of this ink as the hole transport layer in CQD optoelectronics, achieving an external quantum efficiency of 84% at 1210 nm. The realisation of film made up of different compositions using colloidal QD inks remains a challenge because of redispersing of underlying films by polar solvents. Here, the authors introduce aromatic ligands to achieve QD inks in weakly-polar solvents that enable fabrication of multi-compositional films.
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Affiliation(s)
- Seungjin Lee
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Min-Jae Choi
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada.,Department of Chemical and Biochemical Engineering, Dongguk University, Seoul, 04620, Republic of Korea
| | - Geetu Sharma
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Scarborough, ON, M1C 1A4, Canada
| | - Margherita Biondi
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Bin Chen
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Se-Woong Baek
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada.,Department of Chemical and Biological Engineering, Korea University, 145 Anam-Ro, Seongbuk-Gu, Seoul, 02841, Republic of Korea
| | - Amin Morteza Najarian
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Joshua Wicks
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Laxmi Kishore Sagar
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - F Pelayo García de Arquer
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto Scarborough, Scarborough, ON, M1C 1A4, Canada.
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 35 St George Street, Toronto, ON, M5S 1A4, Canada.
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