Stacking-Order-Driven Optical Properties and Carrier Dynamics in ReS2

Chiral Stacking Identification of Two-Dimensional Triclinic Crystals Enabled by Machine Learning

Chiral materials possess broken inversion and mirror symmetry and show great potential in the application of next-generation optic, electronic, and spintronic devices. Two-dimensional (2D) chiral crystals have planar chirality, which is nonsuperimposable on their 2D enantiomers by any rotation about the axis perpendicular to the substrate. The degree of freedom to construct vertical stacking of 2D monolayer enantiomers offers the possibility of chiral manipulation for designed properties by creating multilayers with either a racemic or enantiomerically pure stacking order. However, the rapid recognition of the relative proportion of two enantiomers becomes demanding due to the complexity of stacking orders of 2D chiral crystals. Here, we report the unambiguous identification of racemic and enantiomerically pure stackings for layered ReSe2 and ReS2 using circular polarized Raman spectroscopy. The chiral Raman response is successfully manipulated by the enantiomer proportion, and the stacking orders of multilayer ReSe2 and ReS2 can be completely clarified with the help of second harmonic generation and scanning transmission electron microscopy measurements. Finally, we trained an artificial intelligent Spectra Classification Assistant to predict the chirality and the complete crystallographic structures of multilayer ReSe2 from a single circular polarized Raman spectrum with the accuracy reaching 0.9417 ± 0.0059.

Precise Crystal Orientation Identification and Twist-Induced Giant Modulation of Optical Anisotropy in 1T'-ReS2

The ability to precisely identify crystal orientation as well as to nondestructively modulate optical anisotropy in atomically thin rhenium dichalcogenides is critical for the future development of polarization programmable optoelectronic devices, which remains challenging. Here, we report a modified polarized optical imaging (POI) method capable of simultaneously identifying in-plane (Re chain) and out-of-plane (c-axis) crystal orientations of the monolayer to few-layer ReS2, meanwhile, propose a nondestructive approach to modulate the optical anisotropy in ReS2 via twist stacking. The results show that parallel and near-cross POI are effective to independently identify the in-plane and out-of-plane crystal orientations, respectively, while regulating the twist angle allows for giant modulation of in-plane optical anisotropy from highly intrinsic anisotropy to complete optical isotropy in the stacked ReS2 bilayer (with either the same or opposite c-axes), as well modeled by linear electromagnetic theory. Overall, this study not only develops a simple optical method for precise crystal orientation identification but also offers an efficient light polarization control strategy, which is a big step toward the practical application of anisotropic van der Waals materials in the design of nanophotonic and optoelectronic devices.

Divergent Vibrational Property Induced by an Anomalous Layer Sequence in Two-Dimensional GaPS4

Recently, various fundamental properties of GaPS4 such as anisotropy and strain-induced properties have been reported, but the impacts of the stacking sequence in layered materials remain ambiguous. This ambiguity is evident in the inconsistent Raman scattering data reported for GaPS4, suggesting a significant influence of stacking order on its physical properties. To demonstrate the discrepancies, this study investigates the vibrational characteristics of 2D GaPS4 under different stacking sequences using both experimental observations and theoretical models (AA and AB sequences) through density functional theory calculations. The results of our theoretical calculations revealed that the identical stacking sequence structure significantly influences the vibrational configurations of GaPS4, which results in divergent configurations of Raman scattering spectra including unidentified Raman peaks. Our study addresses not only the clarification of the ambiguity of experimental observations but also qualitative criteria to evaluate the degree of each stacking sequence.

Extraordinary Polarization and Thickness Dependences of Photocarrier Dynamics in PdSe2 Ribbons

Pentagonal palladium diselenide (PdSe2) stands out for its exceptional optoelectronic properties, including high carrier mobility, tunable bandgap, and anisotropic electronic and optical responses. Herein, we systematically investigate photocarrier dynamics in PdSe2 ribbons using polarization-resolved optical pump-probe spectroscopy. In thin PdSe2 ribbons with a semiconductor phase, the photocarrier dynamics are found to be dominated by intraband hot-carrier cooling, interband recombination, and the exciton effect, showing weak crystalline orientation dependences. Conversely, in thick semimetal-phase PdSe2 ribbons, the photocarrier relaxations governed by the electron-optical/acoustic phonon scattering strongly depend on the sample orientation, albeit with a degradation in in-plane anisotropy following hot-carrier cooling. Furthermore, we analyze the correlations between photocarrier dynamics and anisotropic energy dispersions of electronic structures across a wide range in k space, as well as the contributions from the anisotropic electron-phonon couplings. Our study provides crucial insights for developing polarization-sensitive photoelectronic devices based on PdSe2.

Mixed-Dimensional van der Waals Heterostructure (2D ReS2/0D MoS2 Quantum Dots)-Based Broad Spectral Range with Ultrahigh-Responsive Photodetector

The remarkable properties of two-dimensional (2D) materials have led to significant advancements in photodetection and optoelectronics research. Currently, there are many successful methods that are employed to improve the responsivity of photodetectors, but the limited spectral range of the device remains a limitation. This work demonstrates the development of a mixed-dimensional (2D/0D) hybrid photodetector device fabricated using chemical vapor deposition (CVD)-grown monolayer ReS2 and solution-processed MoS2 quantum dots (QDs). The mixed dimensionality of 2D (ReS2) and zero-dimensional (0D) MoS2 QDs assist in improving the spectral range of the device [ultraviolet (360 nm) to near-infrared (780 nm)]. Further, due to the work function difference between ReS2 and MoS2 QDs, the built-in electric field across the mixed-dimensional interface promotes effective charge separation and migration, resulting in improved responsivities of the device. The calculated responsivities of the fabricated photodetector are 5.4 × 102, 3.3 × 102, and 2.6 × 102 A/W when subjected to visible, UV, and NIR light illumination, which is remarkable when compared to the existing reports on broadband photodetection. The mixed-dimensionality heterostructure coupled with contact engineering paves the way for highly responsive broadband photodetectors for potential applications in security, healthcare, etc.

In-plane anisotropic two-dimensional materials for twistronics

In-plane anisotropic two-dimensional (2D) materials exhibit in-plane orientation-dependent properties. The anisotropic unit cell causes these materials to show lower symmetry but more diverse physical properties than in-plane isotropic 2D materials. In addition, the artificial stacking of in-plane anisotropic 2D materials can generate new phenomena that cannot be achieved in in-plane isotropic 2D materials. In this perspective we provide an overview of representative in-plane anisotropic 2D materials and their properties, such as black phosphorus, group IV monochalcogenides, group VI transition metal dichalcogenides with 1T' and Tdphases, and rhenium dichalcogenides. In addition, we discuss recent theoretical and experimental investigations of twistronics using in-plane anisotropic 2D materials. Both in-plane anisotropic 2D materials and their twistronics hold considerable potential for advancing the field of 2D materials, particularly in the context of orientation-dependent optoelectronic devices.

A hidden phase uncovered by ultrafast carrier dynamics in thin Bi2O2Se

Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, and ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to elucidate the carrier dynamics in Bi2O2Se thin films. Besides, different groups have reported various ultrafast timescales and associated mechanisms across films of different thicknesses. A comprehensive understanding in relation to thickness and fluence is still lacking. In this work, we have systematically explored the thickness-dependent Raman spectroscopy and ultrafast carrier dynamics in chemical vapor deposition (CVD)-grown Bi2O2Se thin films on a mica substrate with thicknesses varying from 22.44 nm down to 4.62 nm in both low and high pump fluence regions. Combining the thickness dependence and fluence dependence of the slow decay time, we demonstrate a hidden photoinduced ferroelectric transition in the thinner (<8 nm) Bi2O2Se films below the material damage thresholds, influenced by substrate-induced compressive strain and far-from-equilibrium excitation. Moreover, this transition can be manifested at high electronic excitation densities. Our results deepen the understanding of the interplay between the ferroelectric phase and semiconducting characteristics of Bi2O2Se thin films, offering potential applications in optoelectronic devices that benefit from the ferroelectric transition.

Ultrafast Electronic Dynamics in Anisotropic Indirect Interlayer Excitonic States of Monolayer WSe2/ReS2 Heterojunctions

Understanding ultrafast electronic dynamics of the interlayer excitonic states in atomically thin transition metal dichalcogenides is of importance in engineering valleytronics and developing excitonic integrated circuits. In this work, we experimentally explored the ultrafast dynamics of indirect interlayer excitonic states in monolayer type II WSe2/ReS2 heterojunctions using time-resolved photoemission electron microscopy, which reveals its anisotropic behavior. The ultrafast cooling and decay of excited-state electrons exhibit significant linear dichroism. The ab initio theoretical calculations provide unambiguous evidence that this linear dichroism result is primarily associated with the anisotropic nonradiative recombination of indirect interlayer excitonic states. Measuring time-resolved photoemission energy spectra, we have further revealed the ultrafast evolution of excited-state electrons in anisotropic indirect interlayer excitonic states. The findings have important implications for controlling the interlayer moiré excitonic effects and designing anisotropic optoelectronic devices.

Stacking-Order-Dependent Excitonic Properties Reveal Interlayer Interactions in Bulk ReS2

Rhenium disulfide, a member of the transition metal dichalcogenide family of semiconducting materials, is unique among 2D van der Waals materials due to its anisotropy and, albeit weak, interlayer interactions, confining excitons within single atomic layers and leading to monolayer-like excitonic properties even in bulk crystals. While recent work has established the existence of two stacking modes in bulk, AA and AB, the influence of the different interlayer coupling on the excitonic properties has been poorly explored. Here, we use polarization-dependent optical measurements to elucidate the nature of excitons in AA and AB-stacked rhenium disulfide to obtain insight into the effect of interlayer interactions. We combine polarization-dependent Raman with low-temperature photoluminescence and reflection spectroscopy to show that, while the similar polarization dependence of both stacking orders indicates similar excitonic alignments within the crystal planes, differences in peak width, position, and degree of anisotropy reveal a different degree of interlayer coupling. DFT calculations confirm the very similar band structure of the two stacking orders while revealing a change of the spin-split states at the top of the valence band to possibly underlie their different exciton binding energies. These results suggest that the excitonic properties are largely determined by in-plane interactions, however, strongly modified by the interlayer coupling. These modifications are stronger than those in other 2D semiconductors, making ReS2 an excellent platform for investigating stacking as a tuning parameter for 2D materials. Furthermore, the optical anisotropy makes this material an interesting candidate for polarization-sensitive applications such as photodetectors and polarimetry.

Excitation-Dependent Anisotropic Raman Response of Atomically Thin Pentagonal PdSe2

The group-10 noble-metal dichalcogenides have recently emerged as a promising group of two-dimensional materials due to their unique crystal structures and fascinating physical properties. In this work, the resonance enhancement of the interlayer breathing mode (B1) and intralayer A_g ¹ and A_g ³ modes in atomically thin pentagonal PdSe₂ were studied using angle-resolved polarized Raman spectroscopy with 13 excitation wavelengths. Under the excitation energies of 2.33, 2.38, and 2.41 eV, the Raman intensities of both the low-frequency breathing mode B1 and high-frequency mode A_g ¹ of all the thicknesses are the strongest when the incident polarization is parallel to the a axis of PdSe₂, serving as a fast identification of the crystal orientation of few-layer PdSe₂. We demonstrated that the intensities of B1, A_g ¹, and A_g ³ modes are the strongest with the excitation energies between 2.18 and 2.38 eV when the incident polarization is parallel to PdSe₂ a axis, which arises from the resonance enhancement caused by the absorption. Our investigation reveals the underlying interplay of the anisotropic electron-phonon and electron-photon interactions in the Raman scattering process of atomically thin PdSe₂. It paves the way for future applications on PdSe₂-based optoelectronics.

Vacancy-Regulated Charge Carrier Dynamics and Suppressed Nonradiative Recombination in Two-Dimensional ReX2 (X = S, Se)

Point defects in semiconductors usually act as nonradiative charge carrier recombination centers, which severely limit the performance of optoelectronic devices. In this work, by combining time-domain density functional theory with nonadiabatic molecular dynamics simulations, we demonstrate suppressed nonradiative charge carrier recombination and prolonged carrier lifetime in two-dimensional (2D) ReX₂ (X = S, Se) with S/Se vacancies. In particular, a S vacancy introduces a shallow hole trap state in ReS₂, while a Se vacancy introduces both hole and electron trap states in ReSe₂. Photoexcited electrons and holes can be rapidly captured by these defect states, while the release process is slow, which contributes to an elongated photocarrier lifetime. The suppressed charge carrier recombination lies in the vacancy-induced low-frequency phonon modes that weaken electron-phonon coupling, as well as the reduced overlap between electron and hole wave functions that decreases nonadiabatic coupling. This work provides physical insights into the charge carrier dynamics of 2D ReX₂, which may stimulate considerable interest in using defect engineering for future optoelectronic nanodevices.

Lithium and sodium intercalation in a 2D NbSe2 bilayer-stacked homostructure: comparative study of ionic adsorption and diffusion behavior

In this work, we probed the lithium and sodium intercalation properties in monolayer-stacked NbSe₂ bilayer homostructure configurations for their potential application as anode materials in lithium and sodium ion batteries. Similar to known monolayer transition metal dichalcogenides, such as VS₂, the structural phase transition barrier of NbSe₂ from 1H to 1T is strengthened by lithium and sodium adsorption, implying that it is robust under multiple charging and discharging processes. As multi-layer, stacked 2D materials are more relevant to experiments and their intended applications, four bilayer homostructure stackings were constructed based on the alignment of Nb and Se. All four bilayer homostructure stackings were found to significantly enhance the binding of lithium and sodium at the van der Waals interface, and thus potentially increase the theoretical specific energy capacity of NbSe₂via bilayer stacking. In terms of ionic diffusion, it is observed that for all of the bilayer homostructure configurations the diffusion energy barrier for lithium and sodium generally increased compared to the monolayer case. The nature of the stacking appears to affect the diffusion energy barrier with a value of as high as 1.94 eV in the case of sodium for the AB full stacking (compared to 0.08 eV for the monolayer). It is inferred that although the bilayer homostructure stacking of NbSe₂ could significantly increase the theoretical specific energy capacity for both lithium and sodium, its drawback is the slowing down of the ion kinetics at the van der Waals interface, which are also important in the charging and discharging processes of a battery system.

Anisotropic Interlayer Exciton in GeSe/SnS van der Waals Heterostructure

Stacking two or more two-dimensional materials to form a heterostructure is becoming the most effective way to generate new functionalities for specific applications. Herein, using GW and Bethe-Salpeter equation simulations, we demonstrate the generation of linearly polarized, anisotropic intra- and interlayer excitonic bound states in the transition metal monochalcogenide (TMC) GeSe/SnS van der Waals heterostructure. The puckered structure of TMC results in the directional anisotropy in band structure and in the excitonic bound state. Upon the application of compressive/tensile biaxial strain dramatic variation (∓3%) in excitonic energies, the indirect-to-direct semiconductor transition and the red/blue shift of the optical absorption spectrum are observed. The variations in excitonic energies and optical band gap have been attributed to the change in effective dielectric constant and band dispersion upon the application of biaxial strain. The generation and control over the interlayer excitonic energies can find applications in optoelectronics and optical quantum computers and as a gain medium in lasers.

Doping controlled Fano resonance in bilayer 1T'-ReS2: Raman experiments and first-principles theoretical analysis

In the bilayer ReS2 channel of a field-effect transistor (FET), we demonstrate using Raman spectroscopy that electron doping (n) results in softening of frequency and broadening of linewidth for the in-plane vibrational modes, leaving the out-of-plane vibrational modes unaffected. The largest change is observed for the in-plane Raman mode at ∼151 cm-1, which also shows doping induced Fano resonance with the Fano parameter 1/q = -0.17 at a doping concentration of ∼3.7 × 1013 cm-2. A quantitative understanding of our results is provided by first-principles density functional theory (DFT), showing that the electron-phonon coupling (EPC) of in-plane modes is stronger than that of out-of-plane modes, and its variation with doping is independent of the layer stacking. The origin of large EPC is traced to 1T to 1T' structural phase transition of ReS2 involving in-plane displacement of atoms whose instability is driven by the nested Fermi surface of the 1T structure. Results are compared with those of the isostructural trilayer ReSe2.

2D Re-Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities

The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX2 (X = S, Se) has attracted significant interest regarding its unusual 1T' structure and extraordinary properties in various fields during the past 7 years. For instance, ReX2 possesses large bandgaps (ReSe2: 1.3 eV, ReS2: 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T' structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.

Distinctive Interfacial Charge Behavior and Versatile Photoresponse Performance in Isotropic/Anisotropic WS2/ReS2 Heterojunctions

Van der Waals (vdWs) heterostructures based on in-plane isotropic/anisotropic 2D-layered semiconducting materials have recently received wide attention because of their unique interlayer coupling properties and hold a bright future as building blocks for advanced photodetectors. However, a fundamental understanding of charge behavior inside this kind of heterostructure in the photoexcited state remains elusive. In this work, we carry out a systematic investigation into the photoinduced interfacial charge behavior in type-II WS₂/ReS₂ vertical heterostructures via polarization-dependent pump-probe microscopy. Benefiting from the distinctive (ultrafast and anisotropic) charge-transfer mechanisms, the photodetector based on the WS₂/ReS₂ heterojunction displays more superior optoelectronic properties compared to its constituents with diverse functionalities including moderate photoresponsivity, polarization sensitivity, and fast photoresponse speed. Additionally, this device can function as a self-driven photodetector without the external bias. These results of our work tangibly corroborate the intriguing interlayer interaction in in-plane isotropic/anisotropic heterostructures and are expected to shed light on designing balanced-performance multifunctional optoelectrical devices.

Pristine edge structures of T''-phase transition metal dichalcogenides (ReSe2, ReS2) atomic layers

Rhenium dichalcogenides (ReX2, X = S, Se), as a representative type of T''-phase transition metal dichalcogenides (TMDs), have a distinct anisotropic crystal structure as compared to the well-known H- and T-phases and show excellent optical, electronic and catalytic properties. While edges are known to have a profound influence on the physical and chemical properties of two-dimensional materials, they have not been systematically investigated in T''-phase TMDs. We investigated the pristine edge configurations of ReX2 atomic layers using atomic-resolution scanning transmission electron microscopy (STEM) low-dose imaging and density functional theory (DFT) calculations. The pristine edges in monolayer and bilayer ReX2 can be atomically flat with a length up to several tens of nanometers, and are preferentially oriented along either the a axis or b axis. The characteristic 4Re diamond clusters are well preserved along the edges, and ordered structures of the outermost dangling Se atoms were observed, with the Se atoms fully retained, 50% retained or all lost. The edges oriented along the a axis with 100% Se coverage show a ferromagnetic ground state, while their counterparts parallel to b present mid-gap states without appreciable spin-polarization. The anisotropic T'' structure also dictates the cracking direction in ReX2, with cracks propagating mainly along the a and b axes. The strain at the crack edges often causes re-orientation of the lattice, which would change the anisotropic behavior of ReX2. Our work provides new insights into the edge configuration in T'' TMD atomic layers, and offers new opportunities to tailor the performance of ReX2 by edge engineering.

Nanoscale engineering and Mo-doping of 2D ultrathin ReS2 nanosheets for remarkable electrocatalytic hydrogen generation

Two-dimensional (2D) lamellar ReS2 nanosheets are considered a promising electrocatalyst for the hydrogen evolution reaction (HER) but suffer from poor intrinsic conductivity and catalytically inert basal planes. In this work, sub 50 nm hierarchical Mo-doped ReS2 nanospheres consisting of numerous few-layered and defect-rich nanosheets are designed and synthesized as robust and efficient HER catalysts. On the one hand, the small size of the hierarchical structure, the disordered basal planes and the expanded interlayer endow the nanosheets with plentiful defects, thereby resulting in abundant exposed active sites. On the other hand, Mo-doping offers the nanosheets with some electronic benefits of unsaturated electrons, improved intrinsic conductivity, and optimized hydrogen adsorption free energy (ΔGH) of the basal planes. Owing to the synergistic effects, the 10%Mo-ReS2 catalyst exhibits an optimized catalytic activity with striking kinetic metrics of a small Tafel slope of 62 mV dec-1, a low overpotential of 81 mV at 10 mA cm-2, and a long operation stability of 50 h, and its performance is among the best of ReS2-based catalysts. This work provides a new approach for gaining the structural and electronic benefits of ReS2 catalysts by combinational nanoscale engineering and heteroatom doping.