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Lin S, Ma Z, Ji X, Zhou Q, Chu W, Zhang J, Liu Y, Han Y, Lian L, Jia M, Chen X, Wu D, Li X, Zhang Y, Shan C, Shi Z. Efficient Large-Area (81 cm 2) Ternary Copper Halides Light-Emitting Diodes with External Quantum Efficiency Exceeding 13% via Host-Guest Strategy. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2313570. [PMID: 38693828 DOI: 10.1002/adma.202313570] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/12/2023] [Revised: 04/30/2024] [Indexed: 05/03/2024]
Abstract
Ternary copper (Cu) halides are promising candidates for replacing toxic lead halides in the field of perovskite light-emitting diodes (LEDs) toward practical applications. However, the electroluminescent performance of Cu halide-based LEDs remains a great challenge due to the presence of serious nonradiative recombination and inefficient charge transport in Cu halide emitters. Here, the rational design of host-guest [dppb]2Cu2I2 (dppb denotes 1,2-bis[diphenylphosphino]benzene) emitters and its utility in fabricating efficient Cu halide-based green LEDs that show a high external quantum efficiency (EQE) of 13.39% are reported. The host-guest [dppb]2Cu2I2 emitters with mCP (1,3-bis(N-carbazolyl)benzene) host demonstrate a significant improvement of carrier radiative recombination efficiency, with the photoluminescence quantum yield increased by nearly ten times, which is rooted in the efficient energy transfer and type-I energy level alignment between [dppb]2Cu2I2 and mCP. Moreover, the charge-transporting mCP host can raise the carrier mobility of [dppb]2Cu2I2 films, thereby enhancing the charge transport and recombination. More importantly, this strategy enables a large-area prototype LED with a record-breaking area up to 81 cm2, along with a decent EQE of 10.02% and uniform luminance. It is believed these results represent an encouraging stepping stone to bring Cu halide-based LEDs from the laboratory toward commercial lighting and display panels.
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Affiliation(s)
- Shuailing Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Qicong Zhou
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Weihong Chu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Ying Liu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yanbing Han
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Linyuan Lian
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
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Chen R, Wang Z, Teng Q, Li C, Li J, Zeng L, Zhang R, Huang F, Lei L, Yuan F, Chen D. Binary Host-induced Exciplex Enabled High Color-Rendering Index of 94 for Carbon Quantum Dot-Based White Light-Emitting Diodes. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2404485. [PMID: 38872266 DOI: 10.1002/advs.202404485] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/26/2024] [Revised: 05/25/2024] [Indexed: 06/15/2024]
Abstract
White light-emitting diodes (WLEDs) with high color-rendering index (CRI, >90) are important for backlight displays and solid-state lighting applications. Although the well-developed colloidal quantum dots (QDs) based on heavy metals such as cadmium and lead are promising candidates for WLEDs, the low CRI still remains a significant limitation. In addition, the severe toxicity of heavy metals greatly limits their widespread use. Herein, the study demonstrates low-cost and environmentally friendly carbon quantum dots (CQDs)-based WLEDs that exhibit a high CRI of 94.33, surpassing that of conventional cadmium/lead-containing QD-based WLEDs. This achievement is attained through the employment of a binary host-induced exciplex strategy. The high hole/electron mobility and suitable energy levels of the donor and acceptor give rise to a broadband orange-yellow emission stemming from the exciplex. As the host, the binary exciplex is capable of contributing blue and orange-yellow emission components while efficiently mitigating the aggregation-induced quenching of CQDs. Meanwhile, CQDs effectively address the deep-red emission gap, enabling the realization of CQDs-based WLEDs with high CRI. These WLEDs also exhibit a remarkably low turn-on voltage of 2.8 V, a maximum luminance exceeding 2000 cd m- 2, a correlated color temperature of 4976 K, and Commission Internationale de l'Eclairage coordinates of (0.34, 0.32).
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Affiliation(s)
- Renjing Chen
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, P. R. China
| | - Zhibin Wang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, P. R. China
| | - Qian Teng
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Chenhao Li
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Jinsui Li
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Lingwei Zeng
- School of Chemistry and Chemical Engineering, Hunan University of Science and Technology, Xiangtan, 411201, P. R. China
| | - Ruidan Zhang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, P. R. China
| | - Feng Huang
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, P. R. China
| | - Lei Lei
- Institute of Optoelectronic Materials and Devices, China Jiliang University, Hangzhou, 310018, P. R. China
| | - Fanglong Yuan
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, P. R. China
| | - Daqin Chen
- College of Physics and Energy, Fujian Normal University, Fujian Provincial Key Laboratory of Quantum Manipulation and New Energy Materials, Fuzhou, 350117, P. R. China
- Fujian Provincial Collaborative Innovation Center for Advanced High-Field Superconducting Materials and Engineering, Fuzhou, 350117, P. R. China
- Fujian Provincial Engineering Technology Research Center of Solar Energy Conversion and Energy Storage, Fuzhou, 350117, P. R. China
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Li X, Chen X, Jiang H, Wang M, Lin S, Ma Z, Wang H, Ji H, Jia M, Han Y, Zhu J, Pan G, Wu D, Li X, Xu W, Liu Y, Shan CX, Shi Z. Efficient Deep-Blue Light-Emitting Diodes from Highly Luminescent Eu 2+-Doped Alkali Metal Halide Nanocrystals via Lattice Field Modulation. NANO LETTERS 2024; 24:6601-6609. [PMID: 38787739 DOI: 10.1021/acs.nanolett.4c01155] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/26/2024]
Abstract
Lead-halide perovskite nanocrystals (NCs) are promising for fabricating deep-blue (<460 nm) light-emitting diodes (LEDs), but their development is plagued by low electroluminescent performance and lead toxicity. Herein, the synthesis of 12 kinds of highly luminescent and eco-friendly deep-blue europium (Eu2+)-doped alkali-metal halides (AX:Eu2+; A = Na+, K+, Rb+, Cs+; X = Cl-, Br-, I-) NCs is reported. Through adjustment of the coordination environment, efficient deep-blue emission from Eu-5d → Eu-4f transitions is realized. The representative CsBr:Eu2+ NCs exhibit a high photoluminescence quantum yield of 91.1% at 441 nm with a color coordinate at (0.158, 0.023) matching with the Rec. 2020 blue specification. Electrically driven deep-blue LEDs from CsBr:Eu2+ NCs are demonstrated, achieving a record external quantum efficiency of 3.15% and half-lifetime of ∼1 h, surpassing the reported metal-halide deep-blue NCs-based LEDs. Importantly, large-area LEDs with an emitting area of 12.25 cm2 are realized with uniform emission, representing a milestone toward commercial display applications.
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Affiliation(s)
- Xu Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Huifang Jiang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Meng Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Shuailing Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
- Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, 100 Kexue Avenue, Zhengzhou 450001, China
| | - Hui Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Huifang Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
- Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, 100 Kexue Avenue, Zhengzhou 450001, China
| | - Yanbing Han
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Jinyang Zhu
- State Center for International Cooperation on Designer Low-Carbon & Environmental Materials (CDLCEM), School of Materials Science and Engineering, Zhengzhou University, 100 Kexue Avenue, Zhengzhou 450001, China
| | - Gencai Pan
- School of Physics and Electronics and Institute of Micro/Nano Photonic Materials and Applications, Henan University, Kaifeng 475004, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Wen Xu
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, School of Physics and Materials Engineering, Dalian Minzu University, Dalian 116600, China
| | - Ying Liu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Chong-Xin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
- Laboratory of Zhongyuan Light, School of Physics, Zhengzhou University, 100 Kexue Avenue, Zhengzhou 450001, China
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Chen CH, Yu MH, Wang YY, Tseng YC, Chao IH, Ni IC, Lin BH, Lu YJ, Chueh CC. Enhancing the Performance of 2D Tin-Based Pure Red Perovskite Light-Emitting Diodes through the Synergistic Effect of Natural Antioxidants and Cyclic Molecular Additives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307774. [PMID: 38200683 DOI: 10.1002/smll.202307774] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/06/2023] [Revised: 12/27/2023] [Indexed: 01/12/2024]
Abstract
Tin (Sn)-based perovskites are being investigated in many optoelectronic applications given their similar valence electron configuration to that of lead-based perovskites and the potential environmental hazards of lead-based perovskites. However, the formation of high-quality Sn-based perovskite films faces several challenges, mainly due to the easy oxidation of Sn2+ to Sn4+ and the fast crystallization rate. Here, to develop an environmentally friendly process for Sn-based perovskite fabrication, a series of natural antioxidants are studied as additives and ascorbic acid (VitC) is found to have a superior ability to inhibit the oxidation problem. A common cyclic molecule, 18-Crown-6, is further added as a second additive, which synergizes with VitC to significantly reduce the nonradiative recombination pathways in the PEA2SnI4 film. This synergistic effect greatly improves the performance of 2D red Sn-based PeLED, with a maximum external quantum efficiency of 1.87% (≈9 times that of the pristine device), a purer color, and better bias stability. This work demonstrates the potential of the dual-additive approach in enhancing the performance of 2D Sn-based PeLEDs, while the use of these environmentally friendly additives contributes to their future sustainability.
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Affiliation(s)
- Chiung-Han Chen
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Ming-Hsuan Yu
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yen-Yu Wang
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Yu-Cheng Tseng
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Hsiang Chao
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - I-Chih Ni
- Graduate Institute of Photonics and Optoelectronics, National Taiwan University, Taipei, 10617, Taiwan
| | - Bi-Hsuan Lin
- National Synchrotron Radiation Research Center, Hsinchu, 30076, Taiwan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Chu-Chen Chueh
- Department of Chemical Engineering, National Taiwan University, Taipei, 10617, Taiwan
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Jiang J, Zhang S, Shan Q, Yang L, Ren J, Wang Y, Jeon S, Xiang H, Zeng H. High-Color-Rendition White QLEDs by Balancing Red, Green and Blue Centres in Eco-Friendly ZnCuGaS:In@ZnS Quantum Dots. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2304772. [PMID: 38545966 DOI: 10.1002/adma.202304772] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/20/2023] [Revised: 01/21/2024] [Indexed: 04/05/2024]
Abstract
White light-emitting diodes (WLEDs) are the key components in the next-generation lighting and display devices. The inherent toxicity of Cd/Pb-based quantum dots (QDs) limits the further application in WLEDs. Recently, more attention is focused on eco-friendly QDs and their WLEDs, especially the phosphor-free WLEDs based on mono-component, which profits from bias-insensitive color stability. However, the imbalanced carrier distribution between red-green-blue luminescent centers, even the absence of a certain luminescent center, hinders their balanced and stable photoluminescence/electroluminescence (PL/EL). Here, an In3+-doped strategy in Zn-Cu-Ga-S@ZnS QDs is first proposed, and the balanced carrier distribution is realized by non-equivalent substitution and In3+ doping concentration modulation. The alleviation of the green emitter by the In3+-related red emitter and the compensation of blue emitter by the Zn-related electronic states contribute to the balanced red-green-blue emitting with high PL quantum yield (PLQY) of 95.3% and long lifetime (T90) of over 1100 h in atmospheric conditions. Thus, the In3+-doped WLEDs can achieve exceedingly slight proportional variations between red-green-blue EL intensity over time (∆CIE = (0.007, 0.009)), and high champion CRI of 94.9. This study proposes a single-component QD with balanced and stable red-green-blue PL/EL spectrum, meeting the requirements of lighting and display.
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Affiliation(s)
- Jiangyuan Jiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Shuai Zhang
- School of Precision Instruments and Optoelectronics Engineering, Tianjin University, Key Laboratory of Optoelectronics Information Technology, Ministry of Education, Tianjin, 300072, China
| | - Qingsong Shan
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Linxiang Yang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Jing Ren
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yongjin Wang
- Grünberg Research Centre, Nanjing University of Posts and Telecommunications, Nanjing, 210003, China
| | - Seokwoo Jeon
- Department of Materials Science and Engineering, Korea University, Seoul, 02841, Republic of Korea
| | - Hengyang Xiang
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Haibo Zeng
- MIIT Key Laboratory of Advanced Display Materials and Devices, Institute of Optoelectronics & Nanomaterials, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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Yang S, Tang Z, Qu B, Xiao L, Chen Z. Crown-Assisted CsCu 2I 3 Growth and Trap Passivation for Perovskite Light-Emitting Diodes. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38608287 DOI: 10.1021/acsami.4c01048] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/14/2024]
Abstract
Copper (Cu)-based perovskites are promising for lead-free perovskite light-emitting diodes (PeLEDs). However, it remains a significant challenge to achieve high performance devices due to the nonradiative loss caused by the disordered crystallization and lack of passivation. Crown ethers are known to form host-guest complexes by the interaction between C-O-C groups and certain cations, and 18-crown-6 (18C6) with an appropriate complementary size can interact with Cs+ and Cu+ cations. Herein, we studied the interaction between CsCu2I3 and two crowns with the same cyclic size, 18C6 and dibenzo-18-crown-6 (D18C6). Particularly, D18C6 can reduce the nonradiative recombination rate of CsCu2I3 film by passivating the defects and optimizing the film morphology effectively. The room mean square (RMS) decreased from 5.06 to 2.95 nm, and the PLQY was promoted from 4.71% to 19.9%. Besides, D18C6 can also decrease the barrier of hole injection. The PeLEDs based on D18C6-modified CsCu2I3 realized noticeable improvement with a maximum luminance and EQE of 583 cd/m2 and 0.662%, respectively.
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Affiliation(s)
- Shuang Yang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Zhenyu Tang
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Bo Qu
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Lixin Xiao
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
| | - Zhijian Chen
- State Key Laboratory for Mesoscopic Physics and Department of Physics, Peking University, Beijing 100871, P. R. China
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Li X, Lou B, Chen X, Wang M, Jiang H, Lin S, Ma Z, Jia M, Han Y, Tian Y, Wu D, Xu W, Li X, Ma C, Shi Z. Deep-blue narrow-band emissive cesium europium bromide perovskite nanocrystals with record high emission efficiency for wide-color-gamut backlight displays. MATERIALS HORIZONS 2024; 11:1294-1304. [PMID: 38168978 DOI: 10.1039/d3mh01631e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/05/2024]
Abstract
Lead halide perovskite nanocrystals (NCs) are highly promising for backlighting display applications due to their high photoluminescence quantum yields (PLQYs) and wide color gamut values. However, the practical applications of blue emitters are limited due to the toxicity of lead, unstable structure, and unsatisfactory PLQY. Herein, we report the successful synthesis of divalent europium-based perovskite CsEuBr3 NCs using a modified hot injection method. By optimizing the reaction conditions, the CsEuBr3 NCs display a deep-blue emission at 443 nm with a full width at half maximum (FWHM) of 28.5 nm, a color purity of 99.61%, and a record high PLQY of 93.51% for deep-blue narrow-band emissive lead-free perovskite NCs as far as we know. The emission mechanism of CsEuBr3 NCs is proved through first-principles calculations and spectral analysis. Notably, the CsEuBr3 NCs exhibit remarkable stability when exposed to high temperature, UV irradiation, and long-term sealed storage. The incorporation of CsEuBr3 NCs into polydimethylsiloxane (PDMS) serving as a converter is utilized for white light-emitting devices (WLEDs). WLEDs for backlight displays achieves a wide color gamut of 127.1% of the National Television System Committee standard (NTSC), 94.9% coverage of the ITU-R Recommendation BT.2020 (Rec.2020), and their half-lifetime is up to 1677 h, providing a promising pathway for highly efficient, environment-friendly and practical liquid crystal display backlights.
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Affiliation(s)
- Xu Li
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Bibo Lou
- School of Optoelectronic Engineering & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China
| | - Xu Chen
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Meng Wang
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Huifang Jiang
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Shuailing Lin
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Zhuangzhuang Ma
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Mochen Jia
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Yanbing Han
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Yongtao Tian
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Di Wu
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Wen Xu
- Key Laboratory of New Energy and Rare Earth Resource Utilization of State Ethnic Affairs Commission, School of Physics and Materials Engineering, Dalian Minzu University, Dalian 116600, China
| | - Xinjian Li
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
| | - Chonggeng Ma
- School of Optoelectronic Engineering & CQUPT-BUL Innovation Institute, Chongqing University of Posts and Telecommunications, Chongqing 400065, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
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Fan R, Qiao J, Xu J, Feng S, Liu G. Bright luminescence from nontoxic all-inorganic low-dimensional cesium halide. OPTICS LETTERS 2024; 49:478-481. [PMID: 38300038 DOI: 10.1364/ol.506811] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2023] [Accepted: 11/23/2023] [Indexed: 02/02/2024]
Abstract
Due to the superiority of low cost, easy manufacture, and tunable light emission owing to the diversity of compositions and dimensionalities, the metal halides have appeared as a promising class of semiconductors. Nevertheless, the toxicity problem along with inherent instability of Pb-based metal halides greatly limits their large-scale applications. Based on this situation, it is necessary to develop eco-friendly materials, which could simultaneously maintain the excellent optoelectronic properties of lead materials. In this Letter, the one-dimensional Cu + -alloyed Cs2AgI3 has been successfully synthesized. An intense blue emission located at 469 nm with a large Stokes shift was observed. Density functional theory calculation indicated that the Cu+ ions could effectively modulate the density of state population, which was the key factor drastically boosting the photoluminescence quantum yield (PLQY). This kind of highly efficient metal halide may overcome the bottlenecks of toxicity and poor efficiency issues of blue emission and will have a promising prospect in the optoelectronic fields.
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Kuruppu UM, Rahman MA, Gangishetty MK. Unraveling the Origin of an Unusual Shift in the Electroluminescence of 1D CsCu 2I 3 Light-Emitting Diodes. ACS NANO 2024; 18:1647-1657. [PMID: 38166382 DOI: 10.1021/acsnano.3c09824] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/04/2024]
Abstract
Lead-free low-dimensional copper-based metal halides are promising luminescent materials for broadband LEDs owing to their broad self-trapped exciton (STE) emission. However, recently, in 1D CsCu2I3, a discrepancy between their electroluminescence (EL) and photoluminescence (PL) has been observed. As a result, the overall output color from LEDs is significantly different than the anticipated emission. To unveil the origin of this discrepancy, here, we provide comprehensive analyses and show that the shift in the EL is caused neither by any structural/optical interactions between CsCu2I3 and electron transport layers (ETL) nor by the degradation of 1D CsCu2I3. Instead, it depends on the carrier imbalance on CsCu2I3, mainly due to the difference in the electron mobility of the ETLs and the electron density on the CsCu2I3 layer. By varying the ETLs, different colored 1D CsCu2I3 LEDs with peaks at 556, 590, and 647 nm are fabricated, and a maximum luminance of over 2000 cd/m2 is achieved for a 556 nm LED. Further, by limiting the electron mobility and injection to 1D CsCu2I3 using an insulating LiF layer at the CsCu2I3/ETL interface, more red-shifted LEDs are achieved confirming the critical role of electron density on the EL characteristics of 1D CsCu2I3.
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Affiliation(s)
- Udara M Kuruppu
- Department of Chemistry, Mississippi State University, Mississippi State, Mississippi 39762, United States
| | - Mohammad A Rahman
- Department of Chemistry, Mississippi State University, Mississippi State, Mississippi 39762, United States
| | - Mahesh K Gangishetty
- Department of Chemistry, Mississippi State University, Mississippi State, Mississippi 39762, United States
- Department of Physics and Astronomy, Mississippi State University, Mississippi State, Mississippi 39762, United States
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10
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Li L, Fan Z, Zhang J, Fan D, Liu X, Wang Y. Yellow Emissive CsCu 2I 3 Nanocrystals Induced by Mn 2+ for High-Resolution X-ray Imaging. Inorg Chem 2023. [PMID: 38032318 DOI: 10.1021/acs.inorgchem.3c03724] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/01/2023]
Abstract
Recently, low-dimensional copper(I)-based perovskite or derivatives have gained extensive attention in scintillator applications because of their environmental friendliness and good stabilities. However, the unsatisfactory scintillation performance and complex fabrication processes hindered their practical applications. Herein, efficient yellow emissive CsCu2I3 nanocrystals (NCs) were successfully prepared via a simple Mn2+-assisted hot-injection method. The added Mn2+ effectively induced the phase transformation from Cs3Cu2I5 to CsCu2I3, leading to the preparation of single-phase CsCu2I3 NCs with few defects and a high fluorescence performance. The as-prepared "optimal CsCu2I3 NCs" exhibited superior photoluminescence (PL) performance with a record-high PL quantum yield (PLQY) of 61.9%. The excellent fluorescence originated from the radiative recombination of strongly localized one-dimension (1D) self-trapped excitons (STEs), which was systematically investigated via the wavelength-dependent PL excitation, PL emission, and temperature-dependent PL spectra. These CsCu2I3 NCs also exhibited outstanding X-ray scintillation properties with a high light yield (32000 photons MeV-1) and an ultralow detection limit (80.2 nGyair s-1). Eventually, the CsCu2I3 NCs scintillator film achieved an ultrahigh (16.6 lp mm-1) spatial resolution in X-ray imaging. The CsCu2I3 NCs also exhibited good stabilities against X-ray irradiation, heat, and environmental storage, indicating their great application potential in flexible X-ray detection and imaging.
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Affiliation(s)
- Lingfeng Li
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Zutao Fan
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Jie Zhang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Dianyuan Fan
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
| | - Xiaogang Liu
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
- Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
| | - Yu Wang
- SZU-NUS Collaborative Innovation Center for Optoelectronic Science & Technology, International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, China
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11
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Ma Z, Ji X, Lin S, Chen X, Wu D, Li X, Zhang Y, Shan C, Shi Z, Fang X. Recent Advances and Opportunities of Eco-Friendly Ternary Copper Halides: A New Superstar in Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300731. [PMID: 36854310 DOI: 10.1002/adma.202300731] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/24/2023] [Revised: 02/19/2023] [Indexed: 06/18/2023]
Abstract
Recently, the newly-emerging lead-free metal-halide materials with less toxicity and superior optoelectronic properties have received wide attention as the safer and potentially more robust alternatives to lead-based perovskite counterparts. Among them, ternary copper halides (TCHs) have become a vital group due to their unique features, including abundant structural diversity, ease of synthesis, unprecedented optoelectronic properties, high abundance, and low cost. Although the recent efforts in this field have made certain progresses, some scientific and technological issues still remain unresolved. Herein, a comprehensive and up-to-date overview of recent progress on the fundamental characteristics of TCH materials and their versatile applications is presented, which contains topics such as: i) crystal and electronic structure features and synthesis strategies; ii) mechanisms of self-trapped excitons, luminescence regulation, and environmental stability; and iii) their burgeoning optoelectronic devices of phosphor-converted white light-emitting diodes (WLEDs), electroluminescent LEDs, anti-counterfeiting, X-ray scintillators, photodetectors, sensors, and memristors. Finally, the current challenges together with future perspectives on the development of TCH materials and applications are also critically described, which is considered to be critical for accelerating the commercialization of these rapidly evolving technologies.
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Affiliation(s)
- Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Shuailing Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xiaosheng Fang
- Department of Materials Science, Institute of Optoelectronics, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai, 200438, P. R. China
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Li G, Chen X, Wang M, Cheng S, Yang D, Wu D, Han Y, Jia M, Li X, Zhang Y, Shan C, Shi Z. Regulating Exciton De-Trapping of Te 4+ -Doped Zero-Dimensional Scandium-Halide Perovskite for Fluorescence Thermometry with Record High Time-Resolved Thermal Sensitivity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2305495. [PMID: 37603794 DOI: 10.1002/adma.202305495] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/08/2023] [Revised: 08/15/2023] [Indexed: 08/23/2023]
Abstract
Fluorescence thermometry has been propelled to the forefront of scientific attention due to its high spatial resolution and remote non-invasive detection. However, recent generations of thermometers still suffer from limited thermal sensitivity (Sr ) below 10% change per Kelvin. Herein, this work presents an ideal temperature-responsive fluorescence material through Te4+ -doped 0D Cs2 ScCl5 ·H2 O, in which isolated polyhedrons endow highly localized electronic structures, and the strong electron-phonon coupling facilitates the formation of self-trapped excitons (STEs). With rising temperature, the dramatic asymmetric expansion of the soft lattice induces increased defects, strong exciton-phonon coupling, and low thermal activation energy, which evokes a rapid de-trapping process of STEs, enabling several orders of magnitude changes in the fluorescence lifetime over a narrow temperature range. After regulating the de-trapping process with different Te4+ doping, a record-high Sr (27.36% K-1 ) of fluorescence lifetime-based detection is achieved at 325 K. The robust stability against multiple heating/cooling cycles and long-term measurements enables a low temperature uncertainty of 0.067 K. Further, the developed thermometers are demonstrated for the remote local monitoring of operating temperature on internal electronic components. It is believed that this work constitutes a solid step towards building the next generation of ultrasensitive thermometers based on low-dimensional metal halides.
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Affiliation(s)
- Gaoqiang Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Meng Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Shanshan Cheng
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Dongwen Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yanbing Han
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
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13
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Fan W, Zhang K, Wang S, Xu L, Liu Y, Song J. A ligand strategy retarding monovalent copper oxidation toward achieving Cs 3Cu 2I 5 perovskite emitters with enhanced stability for lighting. NANOSCALE 2023; 15:16561-16570. [PMID: 37819234 DOI: 10.1039/d3nr04347a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/13/2023]
Abstract
0D copper-based perovskites (Cs3Cu2I5) have fascinating optical properties, such as strong exciton binding energy, high photoluminescence quantum yield (PLQY) and large Stokes shifts from self-trapped excitons (STEs), which make them highly considerable candidates in the field of lighting. However, the stability of Cs3Cu2I5 is compromised by the oxidation of Cu+ to Cu2+ during the storage or operation process. Here, we proposed a ligand engineering strategy to improve the stability of Cs3Cu2I5via an organic molecule (ethylenediaminetetraacetic acid, EDTA) with multiple functional groups. The strong interaction between carboxyl groups and Cu+ was evidenced through FTIR and XPS, and it could retard monovalent copper oxidation. After storing for 90 days, the EDTA-engineered Cs3Cu2I5 (EDTA-Cs3Cu2I5) maintained its original crystalline structure, while the control Cs3Cu2I5 exhibited an impurity phase. Through quantitative analysis, the content of Cu2+ in EDTA-Cs3Cu2I5 was found to be 83.9% lower than that in control Cs3Cu2I5. Benefiting from the inhibition of Cu+ oxidation, EDTA-Cs3Cu2I5 exhibited improved light emission stability. For example, the optimized EDTA-Cs3Cu2I5 retained 74.7% of the initial photoluminescence (PL) intensity after 90-day storage under ambient conditions, while the pure Cs3Cu2I5 retained only 41.7%. Furthermore, EDTA could passivate defects and enhance the PL properties of the optimized Cs3Cu2I5, which showed a PLQY of 94.7%, much higher than that of 71.4% for pure Cs3Cu2I5. We further constructed a WLED based on the EDTA-engineered Cs3Cu2I5, which showed CIE at (0.3238, 0.3354), a CRI of 91.7, and a T50 of 361 h. The proposed EDTA ligand strategy provides a new way to regulate the light-emitting properties and stabilities of Cs3Cu2I5 for future industrialization.
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Affiliation(s)
- Wenxuan Fan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Kaishuai Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Shalong Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Leimeng Xu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Yingliang Liu
- School of Materials Science and Engineering, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
| | - Jizhong Song
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China.
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14
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Qin F, Lu M, Lu P, Sun S, Bai X, Zhang Y. Luminescence and Degeneration Mechanism of Perovskite Light-Emitting Diodes and Strategies for Improving Device Performance. SMALL METHODS 2023; 7:e2300434. [PMID: 37434048 DOI: 10.1002/smtd.202300434] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/02/2023] [Revised: 06/17/2023] [Indexed: 07/13/2023]
Abstract
Perovskite light-emitting diodes (PeLEDs) can be a promising technology for next-generation display and lighting applications due to their excellent optoelectronic properties. However, a systematical overview of luminescence and degradation mechanism of perovskite materials and PeLEDs is lacking. Therefore, it is crucial to fully understand these mechanisms and further improve device performances. In this work, the fundamental photophysical processes of perovskite materials, electroluminescence mechanism of PeLEDs including carrier kinetics and efficiency roll-off as well as device degradation mechanism are discussed in detail. In addition, the strategies to improve device performances are summarized, including optimization of photoluminescence quantum yield, charge injection and recombination, and light outcoupling efficiency. It is hoped that this work can provide guidance for future development of PeLEDs and ultimately realize industrial applications.
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Affiliation(s)
- Feisong Qin
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Min Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Po Lu
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Siqi Sun
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Xue Bai
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- State Key Laboratory of Integrated Optoelectronics and College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
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15
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Wang YY, Hu XR, Feng Y, Wang Y, Tian YM, Qu H, Feng LJ, Lei XW, Yue CY. High Emission Efficiency and Thermal Stability in Zero-Dimensional Hybrid Zinc Halide as a Blue Light Emitter. Inorg Chem 2023; 62:15711-15718. [PMID: 37695723 DOI: 10.1021/acs.inorgchem.3c02313] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/13/2023]
Abstract
Exploring highly efficient blue-emissive lead-free halide materials is a significant and challenging objective in the study of luminescent materials. This study reports the synthesis of a new zero-dimensional (0D) hybrid zinc halide of [CYP]ZnBr4 (CYP = 1-cyclohexylpiperazine) containing an isolated [ZnBr4]2- tetrahedron. [CYP]ZnBr4 exhibits strong blue light emission with a high photoluminescence quantum yield (PLQY) of 79.22%, surpassing all previously reported 0D zinc halide counterparts. According to the theoretical and experimental studies, the blue light emission is attributed to intrinsic self-trapped excitons resulting from strong electron-phonon coupling and structural deformation. Importantly, [CYP]ZnBr4 demonstrates excellent structural and luminescence stability toward high temperatures (180 °C) over at least half a month. High luminescence efficiency and stability enable [CYP]ZnBr4 to be an efficient blue phosphor to fabricate white light-emitting diodes (LEDs), which produces high-quality white light with a color rendering index (CRI) of 93.1 and a correlated color temperature (CCT) of 5304 K, closely resembling natural sunlight. This white LED also exhibits consistent performance and stability across different drive currents, suggesting the potential for high-power optoelectronic applications. Overall, this study paves the way for the utilization of 0D hybrid halides in advanced solid-state lighting applications.
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Affiliation(s)
- Yu-Yin Wang
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Xiu-Rui Hu
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Ying Feng
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Yue Wang
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Yu-Meng Tian
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Hao Qu
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Li-Juan Feng
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Xiao-Wu Lei
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
| | - Cheng-Yang Yue
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu 273155, Shandong, China
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16
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Zhou B, Du A, Ding D, Liu Z, Wang Y, Zhong H, Li H, Hu H, Shi Y. Achieving Tunable Cold/Warm White-Light Emission in a Single Perovskite Material with Near-Unity Photoluminescence Quantum Yield. NANO-MICRO LETTERS 2023; 15:207. [PMID: 37651000 PMCID: PMC10471562 DOI: 10.1007/s40820-023-01168-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/30/2023] [Accepted: 07/15/2023] [Indexed: 09/01/2023]
Abstract
Single materials that exhibit efficient and stable white-light emission are highly desirable for lighting applications. This paper reports a novel zero-dimensional perovskite, Rb4CdCl6:Sn2+, Mn2+, which demonstrates exceptional white-light properties including adjustable correlated color temperature, high color rendering index of up to 85, and near-unity photoluminescence quantum yield of 99%. Using a co-doping strategy involving Sn2+ and Mn2+, cyan-orange dual-band emission with complementary spectral ranges is activated by the self-trapped excitons and d-d transitions of the Sn2+ and Mn2+ centers in the Rb4CdCl6 host, respectively. Intriguingly, although Mn2+ ions doped in Rb4CdCl6 are difficult to excite, efficient Mn2+ emission can be realized through an ultra-high-efficient energy transfer between Sn2+ and Mn2+ via the formation of adjacent exchange-coupled Sn-Mn pairs. Benefiting from this efficient Dexter energy transfer process, the dual emission shares the same optimal excitation wavelengths of the Sn2+ centers and suppresses the non-radiative vibration relaxation significantly. Moreover, the relative intensities of the dual-emission components can be modulated flexibly by adjusting the fraction of the Sn2+ ions to the Sn-Mn pairs. This co-doping approach involving short-range energy transfer represents a promising avenue for achieving high-quality white light within a single material.
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Affiliation(s)
- Bo Zhou
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China
- Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai, 264006, People's Republic of China
| | - Aixuan Du
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Dong Ding
- Shandong Laboratory of Yantai Advanced Materials and Green Manufacturing, Yantai, 264006, People's Republic of China
| | - Zexiang Liu
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Ye Wang
- Key Laboratory of Material Physics, School of Physics and Microelectronics, Zhengzhou University, Ministry of Education, Zhengzhou, 450052, People's Republic of China
| | - Haizhe Zhong
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Henan Li
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China
| | - Hanlin Hu
- Hoffmann Institute of Advanced Materials, Shenzhen Polytechnic, Shenzhen, 518060, People's Republic of China.
| | - Yumeng Shi
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, People's Republic of China.
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17
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Zhao L, Cao X, Jang X, Zhang Y, Shang B, Sun Z, Zhan Y. One-pot synthesis of nitrogen-doped carbonized polymer dots with tunable emission for multicolor light-emitting diodes. SPECTROCHIMICA ACTA. PART A, MOLECULAR AND BIOMOLECULAR SPECTROSCOPY 2023; 299:122815. [PMID: 37196549 DOI: 10.1016/j.saa.2023.122815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/12/2023] [Revised: 04/25/2023] [Accepted: 04/30/2023] [Indexed: 05/19/2023]
Abstract
Carbonized polymer dots (CPDs) have highly potential application value in the field of optoelectronic devices due to their preferable stability, excellent optical properties and low cost. Here, the nitrogen-doped carbonized polymer dots (HNCDs) with self-quenching-resistant fluorescence were prepared via a simple solvothermal method with citric acid, urea and 2-hydroxyethyl methacrylate (HEMA) as raw materials. The structure and optical properties of the HNCDs have been explored in detail by various contrast experiments. The results show that HEMA form the poly(HEMA) to modify on the surface of carbonized core, which can overcome the quenching effect of carbonized core. The nitrogen doping is crucial for the red shift emission of solid-state HNCDs. Furthermore, the HNCDs exhibit concentration-dependent emission and excellent compatibility with silicone sol, which lead to their emission red shifted from blue to red with increasing concentration. The HNCDs were further applied to construct the light-emitting diodes (LEDs), and the multicolor LEDs ranging from blue to red can be prepared by simply varying the type of chips and adjusting the concentration of HNCDs in encapsulating material.
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Affiliation(s)
- Liuxi Zhao
- Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Xiyue Cao
- Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Xuanfeng Jang
- Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Yuhong Zhang
- Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China
| | - Bin Shang
- State Key Laboratory of New Textile Materials and Advanced Processing Technologies, School of Materials Science and Engineering, Wuhan Textile University, Wuhan 430200, China.
| | - Zhengguang Sun
- Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
| | - Yuan Zhan
- Key Laboratory for the Green Preparation and Application of Functional Materials, Ministry of Education, Hubei Key Laboratory of Polymer Materials, School of Materials Science and Engineering, Hubei University, Wuhan 430062, China.
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18
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Zhou T, Wang Y, Zhang H, Pan Z, Ma X, Sun Y, Chen H, Wang L, Jiang W. Syntheses, Structures, and Photoluminescence of Copper-Based Halides. Inorg Chem 2023; 62:7376-7384. [PMID: 37134020 DOI: 10.1021/acs.inorgchem.3c00580] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 05/04/2023]
Abstract
Copper-based halides have been found to be a new family of lead-free materials with high stability and superior optoelectrical properties. In this work, we report the photoluminescence of the known (C8H14N2)CuBr3 and the discovery of three new compounds, (C8H14N2)CuCl3, (C8H14N2)CuCl3·H2O, and (C8H14N2)CuI3, which all exhibit efficient light emissions. All these compounds have monoclinic structures with the same space group (P21/c) and zero-dimensional (0D) structures, which can be viewed as the assembly of promising aromatic molecules and different copper halide tetrahedrons. Upon the irradiation of deep ultraviolet light, (C8H14N2)CuCl3, (C8H14N2)CuBr3,, and (C8H14N2)CuI3 show green emission peaking at ∼520 nm with a photoluminescent quantum yield (PLQY) of 3.38, 35.19, and 17.81%, while (C8H14N2)CuCl3·H2O displays yellow emission centered at ∼532 nm with a PLQY of 2.88%. A white light-emitting diode (WLED) was successfully fabricated by employing (C8H14N2)CuBr3 as a green emitter, demonstrating the potential of copper halides for applications in the green lighting field.
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Affiliation(s)
- Tianrui Zhou
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yunluo Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Han Zhang
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Zesheng Pan
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Xueqing Ma
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Yiyang Sun
- State Key Laboratory of High-Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 201899, China
| | - Haijie Chen
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Lianjun Wang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
| | - Wan Jiang
- State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, Institute of Functional Materials, College of Materials Science and Engineering, Donghua University, Shanghai 201620, China
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19
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Wu H, Yin H, Wang Z, Xu X, Zhang R. Ligand induced phase-controlled synthesis of copper halide perovskite nanocrystals towards tunable white light emission. Chem Phys Lett 2023. [DOI: 10.1016/j.cplett.2023.140446] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/29/2023]
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20
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Yang R, Yang D, Wang M, Zhang F, Ji X, Zhang M, Jia M, Chen X, Wu D, Li XJ, Zhang Y, Shi Z, Shan C. High-Efficiency and Stable Long-Persistent Luminescence from Undoped Cesium Cadmium Chlorine Crystals Induced by Intrinsic Point Defects. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2207331. [PMID: 36825674 DOI: 10.1002/advs.202207331] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/10/2022] [Revised: 02/11/2023] [Indexed: 05/27/2023]
Abstract
Application of long-persistent luminescence (LPL) materials in many technological fields is in the spotlight. However, the exploration of undoped persistent luminescent materials with high emission efficiency, robust stability, and long persistent duration remains challenging. Here, inorganic cesium cadmium chlorine (CsCdCl3 ) is developed, featuring remarkable LPL characteristics at room temperature, which is synthesized by a facile hydrothermal method. Excited by ultraviolet light, the CsCdCl3 crystals exhibit an intense yellow emission with a large photoluminescence quantum yield of ≈90%. Different from the reported systems with lanthanides or transition metals doping, the CsCdCl3 crystals without dopants perform yellow LPL with a long duration of 6000 s. Joint experiment-theory characterizations reveal the intrinsic point defects of CsCdCl3 act as the trap centers of excited electrons and the carrier de-trapping process from such trap sites to localized emission centers contributes to the LPL. Encouraged by the attractive fluorescence and persistent luminescence as well as good stability of CsCdCl3 against environment oxygen/moisture (75%), heat (100 °C for 10 h), and ultraviolet light irradiation, an effective dual-mode information storage-reading application is demonstrated. The results open up a new frontier for exploring LPL materials without dopants and provide an opportunity for advanced information storage compatible for practical applications.
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Affiliation(s)
- Ruoting Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Dongwen Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Meng Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Fei Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Mengyao Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Xin Jian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun, 130012, P. R. China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, P. R. China
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21
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Li Z, Li Q, Cao M, Rao Z, Shi X, Zhou L, Zhao X, Gong X. Multimodal Luminescent Low-Dimension Cs 2ZrCl 6: xSb 3+ Crystals for White Light-Emitting Diodes and Information Encryption. LANGMUIR : THE ACS JOURNAL OF SURFACES AND COLLOIDS 2023; 39:3792-3799. [PMID: 36853231 DOI: 10.1021/acs.langmuir.3c00129] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Low-dimension perovskite materials have attracted wide attention due to their excellent optical properties and stability. Herein, Sb3+-doped Cs2ZrCl6 crystals are synthesized by a coprecipitation method in which Sb3+ ions partially replace Zr4+ ions. The Cs2ZrCl6:xSb3+ powder shows blue and orange-red emissions under a 254 and 365 nm light, respectively, due to the [ZrCl6]2- octahedron and [SbCl6]3- octahedron. The photoluminescence quantum yield (PLQY) of Cs2ZrCl6:xSb3+ (x = 0.1) crystals is up to 52.5%. According to experimental and computational results, the emission mechanism of the Cs2ZrCl6:xSb3+ crystals is proposed. On the one hand, a wide blue emission with a large Stokes shift is caused by the self-trapping excitons of [ZrCl6]2- octahedra under a 260 nm excitation. On the other hand, the luminescence mechanism of [SbCl6]3- octahedron is divided into two parts: 1P1 → 1S0 (490 nm) and 3P1 → 1S0 (625 nm). The broad-band emission, high PLQY, and excellent stability endow the Cs2ZrCl6:xSb3+ powders with the potential for the fabrication of white light-emitting diodes (WLEDs). A WLED device is fabricated using a commercial 310 nm NUV chip, which shows a high color rendering index of 89.7 and a correlated color temperature of 5333 K. In addition, the synthesized Cs2ZrCl6:xSb3+ crystals can be also successfully used for information encryption. Our work will provide a deep understanding of the photophysical properties of Sb3+-doped perovskites and facilitate the development of Cs2ZrCl6:xSb3+ crystals in encrypting multilevel optical codes and WLEDs.
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Affiliation(s)
- Zhilin Li
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, China
| | - Qiaoqiao Li
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Mengyan Cao
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, China
| | - Zhihui Rao
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, China
| | - Xinyu Shi
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, China
| | - Liujiang Zhou
- Yangtze Delta Region Institute (Huzhou), University of Electronic Science and Technology of China, Huzhou 313001, China
- School of Physics, University of Electronic Science and Technology of China, Chengdu 610054, China
| | - Xiujian Zhao
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, China
| | - Xiao Gong
- State Key Laboratory of Silicate Materials for Architectures, Wuhan University of Technology, Wuhan 430070, China
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22
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Han S, Quan J, Wang D, Li H, Liu X, Xu J, Zhang Y, Li Z, Wu L, Fang X. Anisotropic Growth of Centimeter-Size CsCu 2 I 3 Single Crystals with Ultra-Low Trap Density for Aspect-Ratio-Dependent Photodetectors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2206417. [PMID: 36599662 PMCID: PMC9982547 DOI: 10.1002/advs.202206417] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/08/2022] [Indexed: 06/17/2023]
Abstract
Low-dimensional ternary copper iodide metal halide with strong quantum confinement effects has made great progress in optoelectronic fields. However, efficient regulation of anisotropic growth of metal halides single crystal still remains a great challenge. Herein, 2 cm size CsCu2 I3 single crystals with tunable aspect ratio and the trap states (ntrap ) as low as 5.38 × 109 cm-3 are fabricated by optimized anti-solvent vapor-assisted method, in which the growth cycle is shortened by half. Evidenced by real-time observation and the LaMer growth model, the rapid and anisotropic growth mechanism is ascribed to preferential 1D growth, promoted by high concentration and fast vapor rate. Furthermore, the aspect-ratio-dependent optoelectronic performance is observed, the on-off ratio for 2 cm CsCu2 I3 single crystal are enhanced 350 times compared with those of short and thick single crystal, which shows ultrahigh on-off ratio of 1570, D* of 1.34 × 1012 Jones, Rλ of 276.94 mA W-1 , t rise /t decay of 0.37 and 1.08 ms, and EQE of 95.53%, which are clearly at very high level among lead-free perovskite-based photodetectors. This study not only provides a new strategy for overcoming anisotropic growth limitations of low-dimensional metal halides, but also paves a way for high-performance optoelectronic applications.
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Affiliation(s)
- Sancan Han
- School of Materials Science and EngineeringUniversity of Shanghai for Science and TechnologyShanghai200093P. R. China
| | - Jiale Quan
- School of Materials Science and EngineeringUniversity of Shanghai for Science and TechnologyShanghai200093P. R. China
| | - Ding Wang
- School of Materials Science and EngineeringUniversity of Shanghai for Science and TechnologyShanghai200093P. R. China
| | - Huijun Li
- School of Materials Science and EngineeringUniversity of Shanghai for Science and TechnologyShanghai200093P. R. China
| | - Xinya Liu
- Department of Materials ScienceInstitute of OptoelectronicsState Key Laboratory of Molecular Engineering of PolymersFudan UniversityShanghai200438P. R. China
| | - Jingcheng Xu
- School of Materials Science and EngineeringUniversity of Shanghai for Science and TechnologyShanghai200093P. R. China
| | - Yixin Zhang
- School of Materials Science and EngineeringUniversity of Shanghai for Science and TechnologyShanghai200093P. R. China
| | - Ziqing Li
- Department of Materials ScienceInstitute of OptoelectronicsState Key Laboratory of Molecular Engineering of PolymersFudan UniversityShanghai200438P. R. China
| | - Limin Wu
- Department of Materials ScienceInstitute of OptoelectronicsState Key Laboratory of Molecular Engineering of PolymersFudan UniversityShanghai200438P. R. China
- College of Chemistry and Chemical EngineeringInner Mongolia UniversityHohhot010021P. R. China
| | - Xiaosheng Fang
- Department of Materials ScienceInstitute of OptoelectronicsState Key Laboratory of Molecular Engineering of PolymersFudan UniversityShanghai200438P. R. China
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23
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Chen Y, Zhou L, Zhou S, You D, Xiong H, Hu Y, Chen Q, He R, Li M. Effect of the Host Lattice Environment on the Expression of 5s 2 Lone-Pair Electrons in a 0D Bismuth-Based Metal Halide. Inorg Chem 2023; 62:2806-2816. [PMID: 36716166 DOI: 10.1021/acs.inorgchem.2c03961] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/31/2023]
Abstract
ns2-Metal halide perovskites have attracted wide attention due to their fascinating photophysical properties. However, achieving high photoluminescence (PL) properties is still an enormous challenge, and the relationship between the lattice environment and ns2-electron expression is still elusive. Herein, an organic-inorganic Bi3+-based halide (C5H14N2)2BiCl6·Cl·2H2O (C5H14N22+ = doubly protonated 1-methylpiperazine) with a six-coordinated structure has been successfully prepared, which, however, exhibits inferior PL properties due to the chemically inert expression of Bi3+-6s2 lone-pair electrons. After reasonably embedding Sb3+ with 5s2 electrons into the lattice of (C5H14N2)2BiCl6·Cl·2H2O, the host lattice environment induces the Sb-Cl moiety to change from the original five-coordinated to six-coordinated structure, thereby resulting in a broad-band yellow emission with a PL efficiency up to 50.75%. By utilizing the host lattice of (C5H14N2)2BiCl6·Cl·2H2O, the expression of Sb3+-5s2 lone-pair electrons is improved and thus promotes the radiative recombination from the Sb3+-3P1 state, resulting in the enhanced PL efficiency. This work will provide an in-depth insight into the effect of the local structure on the expression of Sb3+-5s2 lone-pair electrons.
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Affiliation(s)
- Yihao Chen
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Lei Zhou
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Shuigen Zhou
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Donghui You
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Haizhou Xiong
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Yuhan Hu
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Qinlin Chen
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Rongxing He
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
| | - Ming Li
- Key Laboratory of Luminescence Analysis and Molecular Sensing (Southwest University), Ministry of Education School of Chemistry and Chemical Engineering, Southwest University, Chongqing400715, P. R. China
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24
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Zhang J, Zhang T, Ma Z, Yuan F, Zhou X, Wang H, Liu Z, Qing J, Chen H, Li X, Su S, Xie J, Shi Z, Hou L, Shan C. A Multifunctional "Halide-Equivalent" Anion Enabling Efficient CsPb(Br/I) 3 Nanocrystals Pure-Red Light-Emitting Diodes with External Quantum Efficiency Exceeding 23. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2209002. [PMID: 36493461 DOI: 10.1002/adma.202209002] [Citation(s) in RCA: 20] [Impact Index Per Article: 20.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2022] [Revised: 11/28/2022] [Indexed: 06/17/2023]
Abstract
Pure-red perovskite LEDs (PeLEDs) based on CsPb(Br/I)3 nanocrystals (NCs) usually suffer from a compromise in emission efficiency and spectral stability on account of the surface halide vacancies-induced nonradiative recombination loss, halide phase segregation, and self-doping effect. Herein, a "halide-equivalent" anion of benzenesulfonate (BS- ) is introduced into CsPb(Br/I)3 NCs as multifunctional additive to simultaneously address the above challenging issues. Joint experiment-theory characterizations reveal that the BS- can not only passivate the uncoordinated Pb2+ -related defects at the surface of NCs, but also increase the formation energy of halide vacancies. Moreover, because of the strong electron-withdrawing property of sulfonate group, electrons are expected to transfer from the CsPb(Br/I)3 NC to BS- for reducing the self-doping effect and altering the n-type behavior of CsPb(Br/I)3 NCs to near ambipolarity. Eventually, synergistic boost in device performance is achieved for pure-red PeLEDs with CIE coordinates of (0.70, 0.30) and a champion external quantum efficiency of 23.5%, which is one of the best value among the ever-reported red PeLEDs approaching to the Rec. 2020 red primary color. Moreover, the BS- -modified PeLED exhibits negligible wavelength shift under different operating voltages. This strategy paves an efficient way for improving the efficiency and stability of pure-red PeLEDs.
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Affiliation(s)
- Jibin Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Tiankai Zhang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Fanglong Yuan
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
- Key Laboratory of Theoretical & Computational Photochemistry of Ministry of Education, College of Chemistry, Beijing Normal University, Beijing, 100875, China
| | - Xin Zhou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Heyong Wang
- Department of Physics, Chemistry, and Biology (IFM), Linköping University, Linköping, SE-58183, Sweden
- Center for Nano Science and Technology @PoliMi, Istituto Italiano di Tecnologia, Milan, 20133, Italy
| | - Zhe Liu
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Jian Qing
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Hongting Chen
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Shijian Su
- State Key Laboratory of Luminescent Materials and Devices, Institute of Polymer Optoelectronic Materials and Devices, South China University of Technology, Guangzhou, 510640, China
| | - Jianing Xie
- Guangdong-Hong Kong-Macao Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology, School of Physics and Optoelectronic Engineering, Foshan University, Foshan, 528225, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Lintao Hou
- Guangdong Provincial Key Laboratory of Optical Fiber Sensing and Communications, Siyuan laboratory, Guangzhou Key Laboratory of Vacuum Coating Technologies and New Energy Materials, Department of Physics, Jinan University, Guangzhou, 510632, P. R. China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
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25
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Xue SH, Yao JY, Xu LJ, Chen ZN. Advances in electrically driven light-emitting diodes based on lead-free metal halides. Chem Commun (Camb) 2023; 59:1116-1124. [PMID: 36629875 DOI: 10.1039/d2cc06680g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
The emerging lead halide perovskites show great potential for their use as emitters in electrically driven light-emitting diodes (LEDs) with external quantum efficiency (EQE) over 25%. While the toxicity of lead and inferior device stability are the main obstacles for their commercialization, replacing Pb2+ with low- or non-toxic metal ions to form low- or zero-dimensional structures provides an alternative approach to effectively tackle these issues. Recently, luminescent lead-free metal halides have been increasingly developed toward eco-friendly and highly efficient electroluminescence. In this feature article, we give a brief overview of recent advances in luminescent lead-free metal halides and their applications in electrically driven LEDs. The challenges and prospects in this field are outlined at the end.
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Affiliation(s)
- Shu-Hua Xue
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China. .,College of Chemistry and Material Science, Fujian Normal University, Fuzhou 350007, China
| | - Jia-Yu Yao
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China.
| | - Liang-Jin Xu
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China. .,College of Chemistry and Material Science, Fujian Normal University, Fuzhou 350007, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.,University of Chinese Academy of Sciences, Beijing 100039, China
| | - Zhong-Ning Chen
- State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China. .,College of Chemistry and Material Science, Fujian Normal University, Fuzhou 350007, China.,Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou 350108, China.,University of Chinese Academy of Sciences, Beijing 100039, China
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26
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Zhang J, Song Z, Cai P, Wang X. Structures, photoluminescence, and principles of self-activated phosphors. Phys Chem Chem Phys 2023; 25:1565-1587. [PMID: 36602112 DOI: 10.1039/d2cp03742d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/24/2022]
Abstract
Self-activated phosphors without any luminescent dopants, usually display excellent optical properties, such as high oscillator strength, large Stokes shift, and strong luminescence efficiency, and thus have been widely investigated by researchers for several decades. However, their recent advancements in scintillators, white-light illumination, displays and optical sensors compel us to urgently understand the basic principles and significant technological relevance of this worthy family of materials. Herein, we review the structures, photoluminescence principles, and applications of state-of-the-art self-activated phosphors, such as borate, gallate, niobate, phosphate, titanate, vanadate, tungstate, nitrides, oxyfluoride, perovskite, metal halides, and carbon dots. The photoluminescence principles of self-activated phosphors are mainly summarized as transitions between energy levels of rare-earth and transition metal ions, charge transfer transitions of some oxide compounds, and luminescence in all-inorganic semiconductors. The different self-activated phosphors exhibit various structures and site-dependent spectra. Additionally, we discuss the application prospect and main challenges of self-activated phosphors.
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Affiliation(s)
- Jiawei Zhang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Ziling Song
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
| | - Peiqing Cai
- College of Optical and Electronic Technology, China Jiliang University, Hangzhou, Zhejiang 310018, China.
| | - Xiangfu Wang
- College of Electronic and Optical Engineering & College of Flexible Electronics (Future Technology), Nanjing University of Posts and Telecommunications, Nanjing, 210023, China.
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27
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Guo Q, Zhao X, Song B, Luo J, Tang J. Light Emission of Self-Trapped Excitons in Inorganic Metal Halides for Optoelectronic Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201008. [PMID: 35322473 DOI: 10.1002/adma.202201008] [Citation(s) in RCA: 43] [Impact Index Per Article: 21.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/30/2022] [Revised: 03/14/2022] [Indexed: 06/14/2023]
Abstract
Self-trapped excitons (STEs) have recently attracted tremendous interest due to their broadband emission, high photoluminescence quantum yield, and self-absorption-free properties, which enable a large range of optoelectronic applications such as lighting, displays, radiation detection, and special sensors. Unlike free excitons, the formation of STEs requires strong coupling between excited state excitons and the soft lattice in low electronic dimensional materials. The chemical and structural diversity of metal halides provides an ideal platform for developing efficient STE emission materials. Herein, an overview of recent progress on STE emission materials for optoelectronic applications is presented. The relationships between the fundamental emission mechanisms, chemical compositions, and device performances are systematically reviewed. On this basis, currently existing challenges and possible development opportunities in this field are presented.
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Affiliation(s)
- Qingxun Guo
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Xue Zhao
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Boxiang Song
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Jiajun Luo
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
| | - Jiang Tang
- Wuhan National Laboratory for Optoelectronics (WNLO) and School of Optical and Electronic Information, Huazhong University of Science and Technology (HUST), 1037 Luoyu Road, Wuhan, Hubei, 430074, China
- Optics Valley Laboratory, Wuhan, Hubei, 430074, China
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Hu Y, Yan X, Zhou L, Chen P, Pang Q, Chen Y. Improved Energy Transfer in Mn-Doped Cs 3Cu 2I 5 Microcrystals Induced by Localized Lattice Distortion. J Phys Chem Lett 2022; 13:10786-10792. [PMID: 36374550 DOI: 10.1021/acs.jpclett.2c03039] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
With nontoxicity and high emission efficiency, luminescent copper(I)-based halides have attracted much attention as alternatives for lead-based perovskites in photoelectric domains. However, extending the emission wavelength by doping with Mn2+ in a facile way is still a challenge. In this work, Mn2+-doped Cs3Cu2I5 microcrystals were synthesized by a mild solution method, and double emission bands from self-trapped excitons (STEs) and Mn2+ peaking at 445 and 560 nm, respectively, were observed. More importantly, further introduction of alkali metal ions (Rb+, K+, Na+) considerably promoted the luminescence performance of the Cs3Cu2I5-Mn microcrystals. The STE → Mn2+ energy transfer efficiency of the typical sample doped with Na+ increased from ∼0 to 21.30%, and the photoluminescence quantum yield (PLQY) increased from 47.32% to 62.06%. The detailed structural and optical characterizations combined with DFT calculations proved that the doping with alkali metal ions causes lattice distortion and enhances the coupling between [MnI4] and [CuI4] tetrahedra, thus promoting the energy transfer efficiency and the PLQY.
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Affiliation(s)
- Yangxiang Hu
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Xinxin Yan
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials, Guangzhou University, Guangzhou510006, P. R. China
| | - Liya Zhou
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Peican Chen
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Qi Pang
- School of Chemistry and Chemical Engineering/Guangxi Key Laboratory of Electrochemical Energy Materials, Guangxi University, Nanning, Guangxi530004, P. R. China
| | - Yibo Chen
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials, Guangzhou University, Guangzhou510006, P. R. China
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Dey T, Ghorai A, Das S, Ray SK. CsPbI 3/N-GQDs dual layer phosphor-converted white-LEDs with ultrahigh luminous efficiency and color rendering index. NANOTECHNOLOGY 2022; 34:065201. [PMID: 36343354 DOI: 10.1088/1361-6528/aca0a6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2022] [Accepted: 11/07/2022] [Indexed: 06/16/2023]
Abstract
Phosphor-converted LEDs or pc-LEDs, as a solid-state lighting source, are attractive for next-generation display technologies because of their energy savings, and green environmentally friendly nature. Recently, white LEDs are being produced commercially by coating blue LED (440-470 nm) chips with various yellow-emitting phosphors. However, the LEDs produced by this technique often exhibit high correlated color temperature (CCT) and low color rendering index (CRI) values, due to sufficient red spectral components not being present, and thus aren't suitable for commercial grade white illumination. To circumvent this drawback, our work reports for the first time the use of blue and green-emitting nitrogen-functionalized graphene quantum dots (GQDs) coupled with red-emitting CsPbI3NCs for phosphor-based LED applications. We deployed near-UV to visible excitable red-emitting perovskite CsPbI3nanocrystals which contribute toward the red spectral component, thus greatly improving the CRI of the LEDs. CsPbI3nanocrystals are optically excited by nitrogen-functionalized GQD with blue and green emissions in a remote double-layer phosphor stack technique. This double phosphor layer stacking greatly improves both the CRI and luminous efficiency of radiation (LER), which usually has a trade-off in previously reported phosphor stacks. A CCT of ∼5182 K providing daylight white tonality, with superior CRI (∼90%) and ultrahigh LER (∼250 lumens/watt) are reported, which are significantly higher than the established benchmarks.
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Affiliation(s)
- Tamal Dey
- School of Nanoscience and Technology, Indian Institute of Technology Kharagpur, 721302, India
| | - Arup Ghorai
- School of Nanoscience and Technology, Indian Institute of Technology Kharagpur, 721302, India
| | - Soumen Das
- School of Medical Science and Technology, Indian Institute of Technology Kharagpur, 721302, India
| | - Samit K Ray
- Department of Physics, Indian Institute of Technology Kharagpur, 721302, India
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Yan SS, Kong YC, Zhang ZH, Wu ZS, Lian ZD, Zhao YP, Su SC, Li L, Wang SP, Ng KW. Enhanced Optoelectronic Performance Induced by Ion Migration in Lead-Free CsCu 2I 3 Single-Crystal Microrods. ACS APPLIED MATERIALS & INTERFACES 2022; 14:49975-49985. [PMID: 36315112 DOI: 10.1021/acsami.2c14974] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Lead-free perovskite has attracted great attention in realizing high-performance optoelectronic devices due to their excellent atmospheric stability and nontoxic characteristics. Although a pronounced ion migration effect has been observed in this new class of materials, its potential in enhancing the overall device performance is yet to be fully explored. In this work, we studied the effect of ion migrations on the carrier transport behavior and found that the recoverable migration process can contribute to enhancing the on/off ratio in a lead-free CsCu2I3 single-crystal microrod-based photodetector. In detail, we synthesized CsCu2I3 single-crystal microrods via an in-plane self-assembly supersaturated crystallization approach. These microrods with well-defined morphologies were then used to construct ultraviolet (UV)-band photodetectors, which outperform most reported lead-free perovskite photodetectors based on individual single crystals. Simultaneously, ion migration can result in asymmetric band bending in the two-terminal device, as confirmed by surface potential profiling with Kelvin probe force microscopy (KPFM). Such an effect can be harnessed to increase the on/off ratio by almost an order of magnitude. Furthermore, the lead-free CsCu2I3 single crystal exhibits excellent thermal and air stabilities. These findings demonstrate that the CsCu2I3 single-crystal microrods can be used in stable and efficient photodetection, and the ion migration effect can potentially be utilized for improving the optoelectronic performance of lead-free devices.
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Affiliation(s)
- Shan-Shan Yan
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
- College of Chemical and Material Engineering, Quzhou University, Quzhou, Zhejiang32400, China
| | - You-Chao Kong
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
| | - Zhi-Hong Zhang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
- State Key Laboratory of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun130022, China
| | - Zhi-Sheng Wu
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
| | - Zhen-Dong Lian
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
| | - Yun-Peng Zhao
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
- Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou510631, China
| | - Shi-Chen Su
- Institute of Optoelectronic Material and Technology, South China Normal University, Guangzhou510631, China
- SCNU Qingyuan Institute of Science and Technology Innovation Co., Ltd., Qingyuan511517, China
| | - Lin Li
- Key Laboratory for Photonic and Electronic Bandgap Materials Ministry of Education, School of Physics and Electronic Engineering, Harbin Normal University, Harbin150025, China
| | - Shuang-Peng Wang
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
| | - Kar Wei Ng
- Joint Key Laboratory of the Ministry of Education, Institute of Applied Physics and Materials Engineering, University of Macau, Avenida da Universidade, Taipa, Macau999078, China
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A warm-white light-emitting diode based on single-component emitter aromatic carbon nitride. Nat Commun 2022; 13:6495. [PMID: 36310232 PMCID: PMC9618563 DOI: 10.1038/s41467-022-34291-9] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Accepted: 10/18/2022] [Indexed: 11/08/2022] Open
Abstract
Artificial lighting consumes almost one-fifth of global electricity. As an efficient solid-state lighting technology, white light-emitting diodes (WLEDs) have received increasing attention. However, the white luminescence of the traditional WLEDs comes from multi-component emitters, which leads to complex device structure and unstable emitting color. Therefore, developing single-component materials with white-light electroluminescence is of significance for artificial lighting applications. Here, we fabricate single-component white-light electroluminescence devices based on an aromatic carbon nitride material and improve the performance of WLEDs by adjusting the carrier transport. The carbon nitride LEDs emit warm-white light, of which color coordinates and color temperature are (0.44, 0.52) and 3700 K. The optimized LEDs display a very low turn-on voltage of 3.2 V and achieve a milestone in the maximum luminance and external quantum efficiency of 1885 cd m−2 and 1.20%. Our findings demonstrate the low-cost carbon nitride materials have promising potential for single-component WLEDs application. Designing single-component materials with white-light electroluminescence is highly demanded for artificial lighting applications. Here, the authors fabricate a single-component white-light electroluminescence device based on an aromatic carbon nitride material with high maximum luminance and external quantum efficiency.
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32
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Zhou B, Liu Z, Fang S, Nie J, Zhong H, Hu H, Li H, Shi Y. Emission Mechanism of Self-Trapped Excitons in Sb 3+-Doped All-Inorganic Metal-Halide Perovskites. J Phys Chem Lett 2022; 13:9140-9147. [PMID: 36165781 DOI: 10.1021/acs.jpclett.2c02759] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Sb3+ doping confers highly efficient and color-diverse broadband light emission to all-inorganic metal-halide perovskites. However, the emission mechanism is still under debate. Herein, a trace amount of Sb3+ ions (<0.1% atomic percentage) doping in the typical all-inorganic perovskites Cs2NaInCl6, Rb3InCl6, and Cs2InCl5·H2O allows universal observation of the fine structure in the photoluminescence excitation spectrum of the ns2 electron. A lifetime mapping method was utilized to reveal the origin of broadband emission triggered by Sb3+ doping, by which various fluorescence components can be differentiated. In particular, free-exciton emission was identified at the high-energy end of the broadband emission for all three doped systems. The excitation-energy- and temperature-dependent fluorescence decay further indicates the existence and origin of self-trapped states. The observed structural and vibrational symmetry-dependent emission behaviors suggest dipole interactions can dramatically alter Stokes-shift energy and modulate the light-emitting wavelength.
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Affiliation(s)
- Bo Zhou
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Zexiang Liu
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Shaofan Fang
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Jingheng Nie
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Haizhe Zhong
- International Collaborative Laboratory of 2D Materials for Optoelectronics Science and Technology of Ministry of Education, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen 518060, P. R. China
| | - Hanlin Hu
- Hoffman Institute of Advanced Materials, Shenzhen Polytechnic, Shenzhen 518060, P. R. China
| | - Henan Li
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
| | - Yumeng Shi
- School of Electronics and Information Engineering, Shenzhen University, Shenzhen 518060, P. R. China
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33
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Zhang F, Zhou Y, Chen Z, Wang M, Ma Z, Chen X, Jia M, Wu D, Xiao J, Li X, Zhang Y, Shi Z, Shan C. Thermally Activated Delayed Fluorescence Zirconium-Based Perovskites for Large-Area and Ultraflexible X-ray Scintillator Screens. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2204801. [PMID: 36047911 DOI: 10.1002/adma.202204801] [Citation(s) in RCA: 34] [Impact Index Per Article: 17.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/27/2022] [Revised: 08/19/2022] [Indexed: 06/15/2023]
Abstract
Flexible scintillator screens with environmental stability, high sensitivity, and low cost have emerged as candidates for X-ray imaging applications. Here, a large-scale and cost-efficient solution synthesis of the vacancy-ordered double perovskite Cs2 ZrCl6 , which is characterized by thermal activation delayed fluorescence (TADF) dominated by triplet emission under X-ray irradiation, is demonstrated. The large Stokes shift and efficient luminescence collection of TADF effectively ensure the light outcoupling efficiency. Further, flexible X-ray scintillator screens with an area of 400 cm2 are prepared using poly(dimethylsiloxane) (PDMS) as the carrier, exhibiting excellent scintillation properties with light yields as high as 49 400 photons MeV-1 , spatial resolutions up to 18 lp mm-1 and detection limits as low as 65 nGy s-1 . Finally, the high-quality imaging results of non-planar and dynamic objects by such screens are demonstrated. It is believed that the explored Cs2 ZrCl6 @PDMS flexible scintillator screens would offer a big step toward expanding the application range of scintillators in different environments.
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Affiliation(s)
- Fei Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yingchun Zhou
- Institute of Microstructure and Property of Advanced Materials, Beijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Zhipeng Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Meng Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Jiawen Xiao
- Institute of Microstructure and Property of Advanced Materials, Beijing Key Lab of Microstructure and Property of Advanced Materials, Faculty of Materials and Manufacturing, Beijing University of Technology, Beijing, 100124, China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou, 450052, China
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34
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Sun J, Li T, Dong L, Hua Q, Chang S, Zhong H, Zhang L, Shan C, Pan C. Excitation-dependent perovskite/polymer films for ultraviolet visualization. Sci Bull (Beijing) 2022; 67:1755-1762. [PMID: 36546061 DOI: 10.1016/j.scib.2022.08.009] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/19/2022] [Revised: 07/01/2022] [Accepted: 08/01/2022] [Indexed: 01/07/2023]
Abstract
Ultraviolet (UV) visualization has extensive applications in military and civil fields such as security monitoring, space communication, and wearable equipment for health monitoring in the internet of things (IoT). Due to their remarkable optoelectronic features, perovskite materials are regarded as promising candidates for UV light detecting and imaging. Herein, we report for the first time the excitation-dependent perovskite/polymer films with dynamically tunable fluorescence ranging from green to magenta by changing the UV excitation from 260 to 380 nm. And they still render dynamic multi-color UV light imaging with different polymer matrixes, halogen ratios, and cations of perovskite materials. The mechanism of its fluorescence change is related to the chloride vacancies in perovskite materials. A patterned multi-color ultraviolet visualization pad is also demonstrated for visible conversion of the UV region. This technique may provide a universal strategy for information securities, UV visualizations, and dynamic multi-color displays in the IoT.
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Affiliation(s)
- Junlu Sun
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China; Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics (Ministry of Education), School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China
| | - Tianshu Li
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials (Ministry of Education), College of Materials Science and Engineering, Jilin University, Changchun 130012, China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics (Ministry of Education), School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China.
| | - Qilin Hua
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China
| | - Shuai Chang
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Haizheng Zhong
- MIIT Key Laboratory for Low-Dimensional Quantum Structure and Devices, School of Materials Science & Engineering, Beijing Institute of Technology, Beijing 100081, China
| | - Lijun Zhang
- State Key Laboratory of Integrated Optoelectronics, Key Laboratory of Automobile Materials (Ministry of Education), College of Materials Science and Engineering, Jilin University, Changchun 130012, China.
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials Physics (Ministry of Education), School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450001, China.
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Key Laboratory of Micro-nano Energy and Sensor, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, China.
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Ma Z, Ji X, Wang M, Zhang F, Liu Z, Yang D, Jia M, Chen X, Wu D, Zhang Y, Li X, Shi Z, Shan C. Carbazole-Containing Polymer-Assisted Trap Passivation and Hole-Injection Promotion for Efficient and Stable CsCu 2 I 3 -Based Yellow LEDs. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2202408. [PMID: 35780486 PMCID: PMC9507358 DOI: 10.1002/advs.202202408] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/10/2022] [Indexed: 05/05/2023]
Abstract
Perovskite light-emitting diodes (LEDs) are emerging light sources for next-generation lighting and display technologies; however, their development is greatly plagued by difficulty in achieving yellow electroluminescence, environmental instability, and lead toxicity. Copper halide CsCu2 I3 with intrinsic yellow emission emerges as a highly promising candidate for eco-friendly LEDs, but the electroluminescent performance is limited by defect-related nonradiative losses and inefficient charge transport/injection. To solve these issues, a hole-transporting poly(9-vinlycarbazole) (PVK)-incorporated engineering into CsCu2 I3 emitter is proposed. PVK with carbazole groups is permeated at the grain boundaries of CsCu2 I3 films by interacting with the uncoordinated Cu+ , reducing the CuCs and CuI antisite defects to increase the radiative recombination and enhancing the hole mobility to balance the charge transport/injection, resulting in substantially enhanced device performances. Eventually, the yellow LEDs exhibit an 8.5-fold enhancement of external quantum efficiency, and the half-lifetime reaches 14.6 h, representing the most stable yellow LEDs based on perovskite systems reported so far.
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Affiliation(s)
- Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Meng Wang
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Fei Zhang
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Zibin Liu
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Dongwen Yang
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Yu Zhang
- State Key Laboratory on Integrated OptoelectronicsCollege of Electronic Science and EngineeringJilin UniversityQianjin Street 2699Changchun130012China
| | - Xinjian Li
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
| | - Chongxin Shan
- Key Laboratory of Materials Physics of Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityDaxue Road 75Zhengzhou450052China
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36
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Wang Z, Zhang H, Wang W, Tan C, Chen J, Yin S, Zhang H, Zhu A, Li G, Du Y, Wang S, Liu F, Li L. Type-I Heterostructure Based on WS 2/PtS 2 for High-Performance Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:37926-37936. [PMID: 35961962 DOI: 10.1021/acsami.2c08827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
van der Waals (vdW) heterodiodes composed of two-dimensional (2D) layered materials led to a new prospect in photoelectron diodes and photovoltaic devices. Existing studies have shown that Type-I heterostructures have great potential to be used as photodetectors; however, the tunneling phenomena in Type-I heterostructures have not been fully revealed. Herein, a highly efficient nn+ WS2/PtS2 Type-I vdW heterostructure photodiode is constructed. The device shows an ultrahigh reverse rectification ratio of 105 owing to the transmission barrier-induced low reverse current. A unilateral depletion region is formed on WS2, which inhibits the recombination of carriers at the interface and makes the external quantum efficiency (EQE) of the device reach 67%. Due to the tunneling mechanism of the device, which allows the co-existence of a large photocurrent and a low dark current, this device achieves a light on/off ratio of over 105. In addition, this band design allows the device to maintain a high detectivity of 4.53 × 1010 Jones. Our work provides some new ideas for exploring new high-efficiency photodiodes.
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Affiliation(s)
- Zihan Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hui Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Weike Wang
- Nanchang Institute of Technology, Nanchang 330044, P. R. China
| | - Chaoyang Tan
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Jiawang Chen
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Shiqi Yin
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Hanlin Zhang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Ankang Zhu
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Gang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Yuchen Du
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Shaotian Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China
| | - Fengguang Liu
- Hefei Innovation Research Institute, School of Microelectronics, Beihang University, Hefei 230013, P. R. China
| | - Liang Li
- Key Laboratory of Materials Physics, Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, P. R. China
- University of Science and Technology of China, Hefei 230026, P. R. China
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37
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Stoke shifted photoluminescence in Guanidinium lead halides for light emitting applications. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139693] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/15/2022]
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38
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Dai G, Ma Z, Qiu Y, Li Z, Fu X, Jiang H, Ma Z. A Red-Emitting Hybrid Manganese Halide Perovskite C 5H 5NOMnCl 2·H 2O Featuring One-Dimensional Octahedron Chains. Inorg Chem 2022; 61:12635-12642. [PMID: 35912500 DOI: 10.1021/acs.inorgchem.2c01584] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/29/2022]
Abstract
Herein, we successfully synthesized a new organic-inorganic hybrid manganese halide perovskite C5H5NOMnCl2·H2O, in which organic molecules, water molecules (through O atoms), and Cl atoms coordinate with Mn atoms to form deformed [MnO3Cl3] octahedrons. Then, octahedrons form a chain through edge sharing, resulting in a 1D-chain single crystal structure. The high-quality C5H5NOMnCl2·H2O single crystal prepared by a simple solvent evaporation method produced bright red emission at 656 nm attributed to the d-d transition of Mn2+. Also, it has a photoluminescence quantum yield (PLQY) of 24.2%. Photoluminescence excitation and absorption spectra were both featured with multiple bands and were in good agreement with the Mn2+ 3d energy levels. The photoluminescence decay spectrum showed an average lifetime of 0.466 ms, which further proves the d-d transition mechanism. The C5H5NOMnCl2·H2O single crystal had a direct band gap of 1.43 eV. Moreover, a red light LED with a CCT of 1857 K was obtained based on the C5H5NOMnCl2·H2O powder, indicating its promising application in red-emitting LED.
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Affiliation(s)
- Guangkuo Dai
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, State Key Laboratory of Organic-Inorganic Composites, College of Chemical Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zhimin Ma
- Beijing National Laboratory for Molecular Sciences, College of Engineering, Peking University, Beijing 100871, China
| | - Yixin Qiu
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, State Key Laboratory of Organic-Inorganic Composites, College of Chemical Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Zewei Li
- Beijing National Laboratory for Molecular Sciences, College of Engineering, Peking University, Beijing 100871, China
| | - Xiaohua Fu
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, State Key Laboratory of Organic-Inorganic Composites, College of Chemical Engineering, Beijing University of Chemical Technology, Beijing 100029, China
| | - Hong Jiang
- Beijing National Laboratory for Molecular Sciences, College of Engineering, Peking University, Beijing 100871, China
| | - Zhiyong Ma
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, State Key Laboratory of Organic-Inorganic Composites, College of Chemical Engineering, Beijing University of Chemical Technology, Beijing 100029, China
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39
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Li DY, Sun YM, Wang XY, Wang NN, Zhang XY, Yue CY, Lei XW. Zero-Dimensional Hybrid Indium Halides with Efficient and Tunable White-Light Emissions. J Phys Chem Lett 2022; 13:6635-6643. [PMID: 35838645 DOI: 10.1021/acs.jpclett.2c01549] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Two-dimensional hybrid lead perovskites have attracted a great deal of attention in white-light-emitting diodes, but the serious toxicity of Pb2+ and the limited photoluminescence quantum yield (PLQY) still restrict further optoelectronic application. To address these issues, a new combining photon strategy was proposed to achieve highly efficient broadband white-light emission in a new family of zero-dimensional (0D) indium halides based on an [InCl6]3- octahedron. Remarkably, these 0D halides display dual-band white-light emission derived from the synergistic work of blue- and yellow-light-emitting bands, which can be ascribed to the radiative recombination of bound excitons in organic cations and self-trapped excitons in inorganic anions, respectively, based on spectroscopy and theoretical studies. In-depth first-principles calculation demonstrates that the increased structural deformability effectively improves the PLQY from 7.01% to 18.56%. As a proof of concept, this work provides a profound understanding for advancing the rational design of novel single-component 0D lead-free halides as high-performance white-light emitters.
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Affiliation(s)
- Dong-Yang Li
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu, Shandong 273155, P. R. China
- School of Chemistry and Chemical Engineering, Qufu Normal University, Qufu, Shandong 273165, P. R. China
| | - Yu-Ming Sun
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu, Shandong 273155, P. R. China
| | - Xing-Yu Wang
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu, Shandong 273155, P. R. China
| | - Nan-Nan Wang
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu, Shandong 273155, P. R. China
| | - Xiao-Yang Zhang
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu, Shandong 273155, P. R. China
| | - Cheng-Yang Yue
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu, Shandong 273155, P. R. China
| | - Xiao-Wu Lei
- School of Chemistry, Chemical Engineering and Materials, Jining University, Qufu, Shandong 273155, P. R. China
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40
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Xing X, Tong T, Mohebinia M, Wang D, Ren Z, Hadjiev VG, Wang Z, Bao J. Photoluminescence and Raman Spectra of One-Dimensional Lead-free Perovskite CsCu 2I 3 Single-Crystal Wires. J Phys Chem Lett 2022; 13:6447-6454. [PMID: 35816284 DOI: 10.1021/acs.jpclett.2c01544] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Lead-free highly luminescent CsCu2I3 perovskite has attracted much attention recently, but agreements on basic optical properties have remained unsettled. By correlating X-ray diffraction with the photoluminescence (PL) of CsCu2I3 single-crystal wires, we first show that blue PL at 420 nm originates from CuI. We then exclude defect states as a source for the broadband emission centered at 570 nm from the lack of defect absorption, PL under sub-bandgap photoexcitation, observations of a linear dependence of PL intensity on excitation laser power, and a strong spectral blueshift under mild hydrostatic pressure. Finally, using a model of the self-trapped exciton and the associated coordinate configuration diagram, we explain pressure evolutions of PL energy, intensity, and lifetime. Single-crystal wires also enable us to obtain polarization-dependent Raman spectra down to 10 cm-1 and confirm their respective ambient crystal structure of orthorhombic Cmcm and phase transition to Pbnm at ∼5 GPa.
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Affiliation(s)
- Xinxin Xing
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
- Department of Electrical & Computer Engineering and Texas Center for Superconductivity (TCSUH), University of Houston, Houston, Texas 77204, United States
| | - Tian Tong
- Department of Electrical & Computer Engineering and Texas Center for Superconductivity (TCSUH), University of Houston, Houston, Texas 77204, United States
| | - Mohammadjavad Mohebinia
- Materials Science and Engineering Program, University of Houston, Houston, Texas 77204, United States
| | - Dezhi Wang
- Department of Physics and Texas Center for Superconductivity (TCSUH), University of Houston, Houston, Texas 77204, United States
| | - Zhifeng Ren
- Department of Physics and Texas Center for Superconductivity (TCSUH), University of Houston, Houston, Texas 77204, United States
| | - Viktor G Hadjiev
- Department of Mechanical Engineering and Texas Center for Superconductivity (TCSUH), University of Houston, Houston, Texas 77204, United States
| | - Zhiming Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu, Sichuan 610054, China
- Institute for Advanced Study, Chengdu University, Chengdu 610106, China
| | - Jiming Bao
- Department of Electrical & Computer Engineering and Texas Center for Superconductivity (TCSUH), University of Houston, Houston, Texas 77204, United States
- Materials Science and Engineering Program, University of Houston, Houston, Texas 77204, United States
- Department of Physics and Texas Center for Superconductivity (TCSUH), University of Houston, Houston, Texas 77204, United States
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41
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Zhang F, Chen X, Qi X, Liang W, Wang M, Ma Z, Ji X, Yang D, Jia M, Wu D, Li XJ, Zhang Y, Shi Z, Shan CX. Regulating the Singlet and Triplet Emission of Sb 3+ Ions to Achieve Single-Component White-Light Emitter with Record High Color-Rendering Index and Stability. NANO LETTERS 2022; 22:5046-5054. [PMID: 35579571 DOI: 10.1021/acs.nanolett.2c00733] [Citation(s) in RCA: 19] [Impact Index Per Article: 9.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The rapid development of solid-state lighting technology has attracted much attention for searching efficient and stable luminescent materials, especially the single-component white-light emitter. Here, we adopt a facile ion-doping technology to synthesize vacancy-ordered double perovskite Cs2ZrCl6:Sb. The introduction of Sb3+ ions with a 5s2 active lone pair into Cs2ZrCl6 host stimulates the singlet (blue) and triplet (orange) states emission of Sb3+ ions, and their relative emission intensity can be tuned through the energy transfer from singlet to triplet states. Benefiting from the dual-band emission as a pair of perfect complementary colors, the optimum Cs2ZrCl6:1.5%Sb exhibits a high-quality white emission with a color-rendering index of 96. By employing Cs2ZrCl6:1.5%Sb as the down-conversion phosphor, stable single-component white light-emitting diodes with a record half-lifetime of 2003 h were further fabricated. This study puts forward an effective ion-doping strategy to design single-component white-light emitter, making practical applications of them in lighting technologies a real possibility.
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Affiliation(s)
- Fei Zhang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xu Chen
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xiaofeng Qi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Wenqing Liang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Meng Wang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Zhuangzhuang Ma
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xinzhen Ji
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Dongwen Yang
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Mochen Jia
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Di Wu
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Xin Jian Li
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Yu Zhang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, China
| | - Zhifeng Shi
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
| | - Chong-Xin Shan
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Daxue Road 75, Zhengzhou 450052, China
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42
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Cui W, Zhao J, Wang L, Lv P, Li X, Yin Z, Yang C, Tang A. Unraveling the Phase Transition and Luminescence Tuning of Pb-Free Cs-Cu-I Perovskites Enabled by Reaction Temperature and Polar Solvent. J Phys Chem Lett 2022; 13:4856-4863. [PMID: 35617309 DOI: 10.1021/acs.jpclett.2c01039] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Ternary Pb-free Cs-Cu-I perovskites have attracted widespread attention because of their excellent optical properties and environmentally friendly advantages. Herein, two different Pb-free ternary Cs3Cu2I5 nanocrystals (NCs) and CsCu2I3 microrods (MRs) were synthesized via a heating method. The phase and morphology transition from blue emission of Cs3Cu2I5 NCs to yellow emission of CsCu2I3 MRs could be tuned effectively by manipulating the reaction temperature, decreasing the maximum photoluminescence quantum yields (PLQYs) from 82.7% to ∼10%. More interestingly, the Cs3Cu2I5 NCs could self-assemble into stacking chains, which exhibited a strong dependence on the polarity of solvents. In addition, it was demonstrated that the rapid phase transition and luminescence tuning between Cs3Cu2I5 and CsCu2I3 films took only a few seconds by direct heating or exposure to the polar solvent. This work may deepen the understanding of the phase transition process in Cu-based perovskites and provide a fluorescence material with a short switching time for anticounterfeiting applications.
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Affiliation(s)
- Wenrong Cui
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing 100044, China
| | - Jinxing Zhao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing 100044, China
| | - Lijin Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing 100044, China
| | - Peiwen Lv
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing 100044, China
| | - Xu Li
- Hebei Key Laboratory of Optic-Electronic Information and Materials, College of Physics Science and Technology, Hebei University, Baoding 071002, China
| | - Zhe Yin
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing 100044, China
| | - Chunhe Yang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing 100044, China
| | - Aiwei Tang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, School of Physical Science and Engineering, Beijing JiaoTong University, Beijing 100044, China
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43
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Zou C, Liu Q, Chen K, Chen F, Zhao Z, Cao Y, Deng C, Wang X, Li X, Zhan S, Gao F, Li S. A high-performance polarization-sensitive and stable self-powered UV photodetector based on a dendritic crystal lead-free metal-halide CsCu 2I 3/GaN heterostructure. MATERIALS HORIZONS 2022; 9:1479-1488. [PMID: 35262131 DOI: 10.1039/d1mh02073k] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Polarization-sensitive photodetectors are the core of optics applications and have been successfully demonstrated in photodetectors based on the newly-emerging metal-halide perovskites. However, achieving high polarization sensitivity is still extremely challenging. In addition, most of the previously reported photodetectors were concentrated on 1D lead-halide perovskites and 2D asymmetric intrinsic structure materials, but suffered from being external bias driven, lead-toxicity, poor stability and complex processes, severely limiting their practical applications. Here, we demonstrate a high-performance polarization-sensitive and stable polarization-sensitive UV photodetector based on a dendritic crystal lead-free metal-halide CsCu2I3/GaN heterostructure. By combining the anisotropic morphology and asymmetric intrinsic structure of CsCu2I3 dendrites with the isotropic material GaN film, a high specific surface area and built-in electric field are achieved, exhibiting an ultra-high polarization selectivity up to 28.7 and 102.8 under self-driving mode and -3 V bias, respectively. To our knowledge, such a high polarization selectivity has exceeded those of all of the reported perovskite-based devices, and is comparable to, or even superior to, those of the conventional 2D heterostructure materials. Interestingly, the unsealed device shows outstanding stability, and can be stored for over 2 months, and effectively maintained the performance even after repeated heating (373K)-cooling (300K) for different periods of time in ambient air, indicating a remarkable temperature tolerance and desired compatibility for applications under harsh conditions. Such excellent performance and simple method strongly show that the CsCu2I3/GaN heterojunction photodetector has great potential in practical applications with high polarization-sensitivity. This work provides a new insight into designing novel high-performance polarization-sensitive optoelectronic devices.
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Affiliation(s)
- Can Zou
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Qing Liu
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Kai Chen
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Fei Chen
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Zixuan Zhao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Yunxuan Cao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Congcong Deng
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Xingfu Wang
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Xiaohang Li
- King Abdullah University of Science and Technology (KAUST), Advanced Semiconductor Laboratory, Thuwal 23955, Saudi Arabia
| | - Shaobin Zhan
- Shenzhen Institute of Information Technology, Innovation and Entrepreneurship School, Shenzhen, 518172, P. R. China.
| | - Fangliang Gao
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
| | - Shuti Li
- Guangdong Engineering Research centre of Optoelectronic Functional Materials and Devices, Institute of Semiconductors, South China Normal University, Guangzhou, 510631, P. R. China.
- 21C Innovation Laboratory, Contemporary Amperex Technology Ltd, Ningde, Fujian, 352100, P. R. China.
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44
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Jia H, Shi H, Yu R, Ma H, Wang Z, Zou C, Tan Z. Biuret Induced Tin-Anchoring and Crystallization-Regulating for Efficient Lead-Free Tin Halide Perovskite Light-Emitting Diodes. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2200036. [PMID: 35315221 DOI: 10.1002/smll.202200036] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/03/2022] [Revised: 03/05/2022] [Indexed: 06/14/2023]
Abstract
Lead-free perovskite emitters, particularly 2D tin (Sn) halide perovskites, have attracted considerable academic attention in recent years. However, the problems of Sn oxidation and rapid crystallization lead to an inferior perovskite morphology with high trap states, thus limiting the luminous efficiency of Sn halide perovskite light-emitting diodes (PeLEDs). In this study, the authors establish an approach by introducing an organic additive, 2-imidodicarbonic diamide (biuret), to address the issues of Sn oxidation and fast crystallization. The unique symmetrical carbonyl groups in the biuret robustly interact with the Sn-I framework, providing a strong Sn-anchoring effect. Consequently, it also suppresses the easy oxidation of Sn2+ , regulating the crystallization process simultaneously. Density functional theory (DFT) calculations also confirmed the robust interaction between the biuret and the 2D Sn halide perovskite. Furthermore, the authors demonstrate efficient PeLEDs with saturated red emission at 637 nm, a maximum luminance (Lmax ) of 418 cd m-2 , a maximum external quantum efficiency (EQEmax ) of 1.37%, and a half-life (T50 ) of 288 s. This work provides insights on the microcosmic chemical interaction between organics and 2D Sn halide perovskites, advancing the development of efficient lead-free PeLEDs.
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Affiliation(s)
- Haoran Jia
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Hongfei Shi
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Runnan Yu
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Huanyu Ma
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Zhibin Wang
- College of Physics and Energy, Fujian Normal University, Fuzhou, 350117, China
| | - Chao Zou
- College of Chemistry and Materials Engineering, Wenzhou University, Wenzhou, 325027, China
| | - Zhan'ao Tan
- Beijing Advanced Innovation Center for Soft Matter Science and Engineering, Beijing University of Chemical Technology, Beijing, 100029, China
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45
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Stable yellow light emission from lead-free copper halides single crystals for visible light communication. NANO MATERIALS SCIENCE 2022. [DOI: 10.1016/j.nanoms.2022.03.003] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/22/2022]
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46
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Zhou L, Ren M, He R, Li M. Tailoring Photophysical Dynamics in a Hybrid Gallium-Bismuth Heterometallic Halide by Transferring from an Indirect to a Direct Band Structure. Inorg Chem 2022; 61:5283-5291. [PMID: 35302735 DOI: 10.1021/acs.inorgchem.1c04000] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/17/2022]
Abstract
Low-dimensional lead-free metal halides have emerged as novel luminous materials for solid-state lighting, remote thermal imaging, X-ray scintillation, and anticounterfeiting labeling applications. However, the influence of band structure on the intriguing optical property has rarely been explored, especially for low-dimensional hybrid heterometallic halides. In this study, we have developed a lead-free zero-dimensional gallium-bismuth hybrid heterometallic halide, A8(GaCl4)4(BiCl6)4 (A = C8H22N2), that is photoluminescence (PL)-inert because of its indirect-band-gap character. Upon rational composition engineering, parity-forbidden transitions associated with the indirect band gap have been broken by replacing partial Ga3+ with Sb3+, which contains an active outer-shell 5s2 lone pair, resulting in a transition from an indirect to a direct band gap. As a result, broadband yellow PL centered at 580 nm with a large Stokes shift over 200 nm is recorded. Such an emission is attributed to the radiative recombination of an allowed direct transition from triplet 3P1 states of Sb3+ based on experimental characterizations and theoretical calculations. This study provides not only important insights into the effect of the band structure on the photophysical properties but a guidance for the design of new hybrid heterometallic halides for optoelectronic applications.
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Affiliation(s)
- Lei Zhou
- Key Laboratory of Luminescence Analysis and Molecular Sensing, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Meixuan Ren
- Key Laboratory of Luminescence Analysis and Molecular Sensing, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Rongxing He
- Key Laboratory of Luminescence Analysis and Molecular Sensing, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
| | - Ming Li
- Key Laboratory of Luminescence Analysis and Molecular Sensing, Ministry of Education, School of Chemistry and Chemical Engineering, Southwest University, Chongqing 400715, P. R. China
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47
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Cheng YH, Suzuki R, Shinotsuka N, Ebe H, Oshita N, Yamakado R, Chiba T, Masuhara A, Kido J. Gel permeation chromatography process for highly oriented Cs 3Cu 2I 5 nanocrystal film. Sci Rep 2022; 12:4620. [PMID: 35301429 PMCID: PMC8931108 DOI: 10.1038/s41598-022-08760-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/10/2021] [Accepted: 02/21/2022] [Indexed: 11/30/2022] Open
Abstract
The emergence of green materials has attracted considerable attention in the field of optoelectronics. Copper-based lead-free metal halide (with a near-unity quantum yield) obtained from Cs3Cu2I5 nanocrystals (NCs) can exhibit blue emission with a wavelength of 440 nm and provide outstanding stability for various applications. However, in practical applications, colloidal dispersion purity and film quality are inadequate toward a high-performance device. In this study, antisolvent-free gel permeation chromatography is used to purify Cs3Cu2I5 NCs. The purified Cs3Cu2I5 NCs exhibit a high photoluminescent quantum yield and provide a highly oriented single-crystal film. Density functional theory calculation results indicate that the iodide-rich surface in the NCs makes them highly stable. In addition, it has been demonstrated for the first time that the mixture of polymethyl methacrylate (PMMA) and Cs3Cu2I5 NCs has waterproofing capabilities. The composite film consisting of Cs3Cu2I5 NCs and PMMA can survive in water for several days. This result opens up more possibilities for the application of these green material.
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Affiliation(s)
- Yu-Hong Cheng
- Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan
| | - Rikuo Suzuki
- Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan
| | - Narumi Shinotsuka
- Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan
| | - Hinako Ebe
- Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan
| | - Naoaki Oshita
- Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan
| | - Ryohei Yamakado
- Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan
| | - Takayuki Chiba
- Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan.
| | - Akito Masuhara
- Graduate School of Science and Engineering, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan
| | - Junji Kido
- Graduate School of Organic Materials Science, Yamagata University, 4-3-16 Jonan, Yonezawa, Yamagata, 992-8510, Japan.
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Zheng G, Wang T, Lou Q, Shen C, Wu M, Sun J, Ji W, Zang J, Liu K, Dong L, Shan C. Localized Excitonic Electroluminescence from Carbon Nanodots. J Phys Chem Lett 2022; 13:1587-1595. [PMID: 35139310 DOI: 10.1021/acs.jpclett.1c04028] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Localized excitons are expected to achieve high-performance electroluminescence and have been widely investigated in GaN-based light-emitting diodes (LEDs). Although carbon nanodot (CD) based LEDs have been achieved with the radiative recombination of electrons and holes, localized excitonic electroluminescence has been not reported before. In this Letter, localized excitonic electroluminescent devices have been fabricated using fluorescent CDs as an active layer. The CDs show strong localized excitonic yellow emission with a fluorescence quantum yield of 76% and Stokes shift of 2.1 eV. The CD-based LEDs present a sub-bandgap turn-on voltage of 2.4 V and a maximum luminance of 60.2 cd m-2, which is the lowest driving voltage among the CD-based electroluminescent devices. Localized centers trap carriers effectively, resulting in sub-bandgap light emission. The current results manifest that localized excitons may furnish a promising approach to boost the development of CD-based LEDs.
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Affiliation(s)
- Guangsong Zheng
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Ting Wang
- Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130023, China
| | - Qing Lou
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chenglong Shen
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Mengyuan Wu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Junlu Sun
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Wenyu Ji
- Key Lab of Physics and Technology for Advanced Batteries (Ministry of Education), College of Physics, Jilin University, Changchun 130023, China
| | - Jinhao Zang
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Kaikai Liu
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Lin Dong
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Material Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China
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50
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Weng Y, Chen G, Nie J, Que S, Song SH, Yu Y, Zhang F, Liu H, Zhou X, Zhang Y, Sun J, Song JK, Wu C, Guo T, Yan Q. Hybrid Device of Blue GaN Light-Emitting Diodes and Organic Light-Emitting Diodes with Color Tunability for Smart Lighting Sources. ACS OMEGA 2022; 7:5502-5509. [PMID: 35187365 PMCID: PMC8851900 DOI: 10.1021/acsomega.1c06934] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/08/2021] [Accepted: 01/19/2022] [Indexed: 06/14/2023]
Abstract
A lighting device with a wide color-tunable range is still a challenge for lighting based on either organic light-emitting diodes (OLEDs) or inorganic LEDs. In this work, we first proposed a novel hybrid device of organic LEDs and inorganic blue GaN LEDs to achieve full white and other colors. Organic LEDs were stacked with green and red emissive layers and connected with blue GaN LEDs in parallel but in opposite polarity voltage. Under the alternate-current (AC) driving, the hybrid structure can be controlled independently by applying timing variable opposite voltages to emit the light from either blue LEDs or the stacked OLEDs for forming mixed colors. The hybrid device can generate white light, varying in a wide range by changing the amplitude and duty ratio (DR) of AC-driving signals, from cold white to standard white and to warm white (3668-11 833 K). When an AC voltage of (4.80 V, -2.45 V) was applied, the device has a high color gamut of 95.24% National Television System Committee (NTSC) and a high color rendering index (R a) of 92.4%. The novel hybrid device with the blue LED and OLED in opposite polarity exhibits potential applications in smart solid-state lighting, display, and light communication.
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Affiliation(s)
- Yalian Weng
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
| | - Guixiong Chen
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
| | - Junyang Nie
- Faculty
of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an 710049 China
| | - Sihua Que
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
| | - Suk-Ho Song
- Department
of Electrical and Computer Engineering, Sungkyunkwan University, Jangan-Gu, Suwon 16419, Gyeonggi-do, South Korea
| | - Yongshen Yu
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
| | - Fan Zhang
- Fujian
Prima Optoelectronics Company Ltd., Fuzhou 350000, Fujian, PR China
| | - Hengshan Liu
- Fujian
Prima Optoelectronics Company Ltd., Fuzhou 350000, Fujian, PR China
| | - Xiongtu Zhou
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou 350116, Fujian, PR China
| | - Yongai Zhang
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou 350116, Fujian, PR China
| | - Jie Sun
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou 350116, Fujian, PR China
| | - Jang-Kun Song
- Department
of Electrical and Computer Engineering, Sungkyunkwan University, Jangan-Gu, Suwon 16419, Gyeonggi-do, South Korea
| | - Chaoxing Wu
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou 350116, Fujian, PR China
| | - Tailiang Guo
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou 350116, Fujian, PR China
| | - Qun Yan
- College
of Physics and Information Engineering, Fuzhou University, Fuzhou 350116, Fujian, PR China
- Fujian
Science & Technology Innovation Laboratory for Optoelectronic
Information of China, Fuzhou 350116, Fujian, PR China
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