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Moseley OI, Roose B, Zelewski SJ, Stranks SD. Identification and Mitigation of Transient Phenomena That Complicate the Characterization of Halide Perovskite Photodetectors. ACS APPLIED ENERGY MATERIALS 2023; 6:10233-10242. [PMID: 37886222 PMCID: PMC10598628 DOI: 10.1021/acsaem.2c03453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/24/2022] [Accepted: 03/28/2023] [Indexed: 10/28/2023]
Abstract
Halide perovskites have shown promise to advance the field of light detection in next-generation photodetectors, offering performance and functionality beyond what is currently possible with traditional inorganic semiconductors. Despite a relatively high density of defects in perovskite thin films, long carrier diffusion lengths and lifetimes suggest that many defects are benign. However, perovskite photodetectors show detection behavior that varies with time, creating inconsistent device performance and difficulties in accurate characterization. Here, we link the changing behavior to mobile defects that migrate through perovskites, leading to detector currents that drift on the time scale of seconds. These effects not only complicate reproducible device performance but also introduce characterization challenges. We demonstrate that such transient phenomena generate measurement artifacts that mean the value of specific detectivity measured can vary by up to 2 orders of magnitude even in the same device. The presence of defects can lead to photoconductive gain in photodetectors, and we show batch-to-batch processing variations in perovskite devices gives varying degrees of charge carrier injection and photocurrent amplification under low light intensities. We utilize the passivating effect of aging to reduce the impact of defects, minimizing current drifts and eliminating the gain. This work highlights the potential issues arising from mobile defects, which lead to inconsistent photodetector operation, and identifies the potential for defects to tune photodetection behavior in perovskite photodetectors.
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Affiliation(s)
- Oliver
D. I. Moseley
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Bart Roose
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering & Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
| | - Szymon J. Zelewski
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
| | - Samuel D. Stranks
- Cavendish
Laboratory, University of Cambridge, JJ Thomson Avenue, Cambridge CB3 0HE, U.K.
- Department
of Chemical Engineering & Biotechnology, University of Cambridge, Philippa Fawcett Drive, Cambridge CB3 0AS, U.K.
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2
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Huang F, Deng L, Wang T, Zhang A, Yang M, Hou Y. BSA-assisted ultrasound synthesis of water stable CsPbBr 3 nanocrystals for sensitive fluorescent detection of hydrogen sulfide in human serum. Mikrochim Acta 2023; 190:305. [PMID: 37466760 DOI: 10.1007/s00604-023-05879-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Accepted: 06/21/2023] [Indexed: 07/20/2023]
Abstract
A bovine serum albumin (BSA)-assisted ultrasonication strategy was developed for the synthesis of CsPbBr3 nanocrystals (NCs) with stable fluorescence properties in aqueous solution. Such a preparation method is simple, fast and does not require complex equipment. The results show that the synthesized CsPbBr3 NCs are homogeneous in particle size and have good solubility and stability in water. The CsPbBr3 NCs have been utilized as fluorescence probe for rapid detection of hydrogen sulfide (H2S) in human serum. The reaction of H2S with the lead sites on the surface of CsPbBr3 NCs produces lead sulfide (PbS), resulting in the decrease of fluorometric intensity of CsPbBr3 NCs. Our designed fluorescent assay has a linear S2- detecting range of 10 ~ 800 nM with a detection limit of 7.05 nM. The assay was used to determine H2S in human serum with spiked recoveries ranging from 94.98% to 102.69%. This work opens new avenues for the application of halide lead perovskite in different biosensing areas.
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Affiliation(s)
- Feng Huang
- Hunan Provincial Key Laboratory of Micro & Nano Materials Interface Science, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China
| | - Lei Deng
- Hunan Provincial Key Laboratory of Micro & Nano Materials Interface Science, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China
| | - Tingting Wang
- Hunan Provincial Key Laboratory of Micro & Nano Materials Interface Science, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China
| | - Aomei Zhang
- Hunan Provincial Key Laboratory of Micro & Nano Materials Interface Science, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China
| | - Minghui Yang
- Hunan Provincial Key Laboratory of Micro & Nano Materials Interface Science, College of Chemistry and Chemical Engineering, Central South University, Changsha, 410083, China.
- National Engineering Research Center of Personalized Diagnostic and Therapeutic Technology, Changsha, 410083, China.
- Furong Labratory, Changsha, 410083, China.
| | - Yi Hou
- Department of Rehabilitation Medicine, The Second Xiangya Hospital, Central South University, Changsha, 410011, China.
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3
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He L, Hu G, Jiang J, Wei W, Xue X, Fan K, Huang H, Shen L. Highly Sensitive Tin-Lead Perovskite Photodetectors with Over 450 Days Stability Enabled by Synergistic Engineering for Pulse Oximetry System. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210016. [PMID: 36512669 DOI: 10.1002/adma.202210016] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2022] [Revised: 12/07/2022] [Indexed: 06/17/2023]
Abstract
Low-bandgap tin (Sn)-lead (Pb) halide perovskites can achieve near-infrared response for photodetectors. However, the Sn-based devices suffer from notorious instability and high defect densities due to the oxidation propensity of Sn2+ . Herein, a multifunctional additive 4-amino-2,3,5,6-tetrafluorobenzoic acid (ATFBA) is presented, which can passivate surface defects and inhibit the oxidation of Sn2+ through hydrogen bonds and chelation coordination from the terminal amino and carboxyl groups. The perfluorinated benzene ring structure of ATFBA affords the passivator assembled at the grain boundaries to enhance the water resistance. With the synergistical passivation of these functional groups, the Sn-Pb perovskite photodetector exhibits a remarkable responsivity of 0.52 A W-1 and an excellent specific detectivity of 5.34 × 1012 Jones at 850 nm, along with remaining 97% of its initial responsivity over 450 days. Benefitting from high sensitivity, the photodetector is integrated into a pulse oximetry sensor visualization system, yielding accurate blood oxygen saturation and heart rate with less than 2% error. This work paves the avenue toward constructing high-performance and stable Sn-Pb perovskite photodetectors for practical applications.
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Affiliation(s)
- Lijuan He
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China
| | - Gangjian Hu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China
| | - Jizhong Jiang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China
| | - Wei Wei
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China
| | - Xingzheng Xue
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China
| | - Ke Fan
- Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Haitao Huang
- Department of Applied Physics and Research Institute for Smart Energy, The Hong Kong Polytechnic University, Hung Hom, Kowloon, Hong Kong, 999077, China
| | - Liang Shen
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, International Center of Future Science, Jilin University, Changchun, 130012, China
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4
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Huang C, Chen Y, Wang XL, Zhu B, Liu WJ, Ding SJ, Wu X. Flexible Microspectrometers Based on Printed Perovskite Pixels with Graded Bandgaps. ACS APPLIED MATERIALS & INTERFACES 2023; 15:7129-7136. [PMID: 36710447 DOI: 10.1021/acsami.2c20752] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Miniaturized spectrometers have attracted much attention due to their capability to detect spectral information within a small size. However, such technology still faces challenges including large-scale preparation and performance repeatability. In this work, we overcome these challenges by demonstrating a microspectrometer constructed with a series of pixelized graded-bandgap perovskite photodetectors fabricated with inkjet printing. High-quality perovskite films with minimal pinholes and large grains are deposited by optimizing printing conditions including substrate temperature and surface modification. The resulting perovskite photodetectors show decent photosensing performance, and the different photodetectors based on perovskite films with different bandgaps exhibit various spectral responsivities with different cutoff wavelength edges. Microspectrometers are then constructed with the array of the pixelized graded-bandgap perovskite photodetectors, and incident spectra are algorithmically reconstructed by combining their output currents. The reconstruction performance of the miniaturized spectrometer is evaluated by comparing the results to the spectral curve measured with a commercial bulky spectrometer, indicating a reliable spectral reconstruction with a resolution of around 10 nm. More significantly, the miniaturized spectrometers are successfully fabricated on polymer substrates, and they demonstrate excellent mechanical flexibility. Therefore, this work provides a flexible miniaturized spectrometer with large-scale fabricability, which is promising for emerging applications including wearable devices, hyperspectral imaging, and internet of things.
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Affiliation(s)
- Chunming Huang
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Yantao Chen
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Xiao-Lin Wang
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Bao Zhu
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Wen-Jun Liu
- School of Microelectronics, Fudan University, Shanghai200433, China
| | - Shi-Jin Ding
- School of Microelectronics, Fudan University, Shanghai200433, China
- Jiashan Fudan Institute, Jiaxing, Zhejiang Province314100, China
| | - Xiaohan Wu
- School of Microelectronics, Fudan University, Shanghai200433, China
- Hubei Yangtze Memory Laboratories, Wuhan430205, China
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Hou ZL, Ma X, Zhang J, Li C, Wang Y, Cao M. Fascinating Electrical Transport Behavior of Topological Insulator Bi 2 Te 3 Nanorods: Toward Electrically Responsive Smart Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2205624. [PMID: 36328711 DOI: 10.1002/smll.202205624] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/12/2022] [Revised: 10/14/2022] [Indexed: 06/16/2023]
Abstract
Electrical conductivity and dielectric parameters are general inherent features of materials. Controlling these characteristics through applied bias will add a new dimension to regulate the dynamic response of smart materials. Here, a fascinating electrical transport behavior is observed in topological insulator (TI) Bi2 Te3 nanorods, which will play a vital role in intelligent materials or devices as a unit for information reception, processing or feedback. The Bi2 Te3 nanorod aggregates exhibit a monotonic resistance response to voltage, with observed four-fold change of electrical conductivity in a small range electric field of 1 V mm-1 . The dielectric constant and dielectric loss of Bi2 Te3 nanorod composites also show strong dependences on bias voltage due to the unique electrical transport characteristics. The unique voltage-controlled electrical responses are attributed to the change of Fermi levels within the band structure of disordered TI nanorods, which are non-parallel to the applied electric field. The excellent controllable inherent characteristics through electric field endows Bi2 Te3 nanomaterials bright prospects for applications in smart devices and resistive random access memories.
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Affiliation(s)
- Zhi-Ling Hou
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Xiaomei Ma
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Junying Zhang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Chuanjian Li
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Yilin Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Maosheng Cao
- School of Materials Science and Engineering, Beijing Institute of Technology, Beijing, 100081, China
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6
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Zhang C, Xu C, Chen C, Cheng J, Zhang H, Ni F, Wang X, Zou G, Qiu L. Optically Programmable Circularly Polarized Photodetector. ACS NANO 2022; 16:12452-12461. [PMID: 35938975 DOI: 10.1021/acsnano.2c03746] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The detection of circularly polarized light (CPL) has aroused wide attention from both the scientific and industrial communities. However, from the optical activity of the chiral layer in the conventional CPL photodetectors, the sign inversion property is difficult to be achieved. As a result, great challenges arise during the preparation of miniaturized and integrated devices for tunable CPL detection applications. Along these lines, in this work, by taking advantage of the CPL-induced chirality characteristics of the achiral poly(9,9-di-n-hexylfluorene-alt-benzothiadiazole) (F6BT) and the good crystalline and electrical properties of the poly(3-hexylthiophene) (P3HT) film, an optically programmable CPL photodetector was fabricated. Interestingly, the device exhibited excellent discrimination between left- and right-handed CPL, while the maximum anisotropy factor of responsivity was 0.425. On top of that, the rigorously controlled chirality of the F6BT and the capability to be switched by the handedness of CPL was leveraged to realize the switchable detection of both L-CPL and R-CPL. Furthermore, a CPL photodetector array was fabricated, and the image processing and cryptographic characteristics were demonstrated. The proposed device configuration can find application in various scientific fields, including photonics, emission, conversion, or sensing with CPL but also is anticipated to play a key role for imaging and anticounterfeiting applications.
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Affiliation(s)
- Can Zhang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Chenyin Xu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
| | - Cuifen Chen
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
| | - Junjie Cheng
- CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, iChEM, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Hongli Zhang
- CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, iChEM, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Fan Ni
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
| | - Gang Zou
- CAS Key Laboratory of Soft Matter Chemistry, Department of Polymer Science and Engineering, iChEM, University of Science and Technology of China, Hefei, Anhui 230026, P. R. China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Optoelectronic Technology, Hefei University of Technology, Hefei 230009, China
- Intelligent Interconnected Systems Laboratory of Anhui, Anhui Province Key Laboratory of Measuring Theory and Precision Instrument, School of Instrument Science and Optoelectronic Engineering, Hefei University of Technology, Hefei 230009, China
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Li CG, Yang Q, Chen D, Zhu H, Chen J, Liu R, Dang Q, Wang X. Polyethyleneimine-assisted co-deposition of polydopamine coating with enhanced stability and efficient secondary modification. RSC Adv 2022; 12:34837-34849. [DOI: 10.1039/d2ra05130c] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/16/2022] [Accepted: 11/23/2022] [Indexed: 12/13/2022] Open
Abstract
The stability and grafting efficiency are important for polydopamine (pDA) coatings used as platforms for secondary grafting.
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Affiliation(s)
- Chun-gong Li
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
| | - Qinqin Yang
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
| | - Dong Chen
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
| | - Hongliang Zhu
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
| | - Jiachen Chen
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
| | - Runjin Liu
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
| | - Qi Dang
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
- Chongqing Engineering and Technology Research Center of Intelligent Rehabilitation and Eldercare, Chongqing City Management College, Chongqing 401331, PR China
| | - Xiang Wang
- Key Laboratory of Biorheological Science and Technology, Ministry of Education, College of Bioengineering, Chongqing University, Chongqing 400044, PR China
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Zhang C, Wang X, Qiu L. Circularly Polarized Photodetectors Based on Chiral Materials: A Review. Front Chem 2021; 9:711488. [PMID: 34568276 PMCID: PMC8455893 DOI: 10.3389/fchem.2021.711488] [Citation(s) in RCA: 21] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Accepted: 06/28/2021] [Indexed: 11/13/2022] Open
Abstract
Circularly polarized light (CPL) plays an important role in many photonic techniques, including tomographic scanning based on circular polarization ellipsometry, optical communication and information of spin, and quantum-based optical calculation and information processing. To fully exploit the functions of CPL in these fields, integrated photoelectric sensors capable of detecting CPL are essential. Photodetectors based on chiral materials can directly detect CPL due to their intrinsic optical activity, without the need to be coupled with polarizers and quarter-wave plates as in conventional photodetectors. This review summarizes the recent research progress in CPL photodetectors based on chiral materials. We first briefly introduce the CPL photodetectors based on different types of chiral materials and their working principles. Finally, current challenges and future opportunities in the development of CPL photodetectors are prospected.
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Affiliation(s)
- Can Zhang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China
| | - Xiaohong Wang
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China
- Anhui Key Laboratory of Advanced Functional Materials and Devices, School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, China
| | - Longzhen Qiu
- National Engineering Lab of Special Display Technology, State Key Lab of Advanced Display Technology, Academy of Opto-Electronic Technology, Hefei University of Technology, Hefei, China
- Anhui Key Laboratory of Advanced Functional Materials and Devices, School of Chemistry and Chemical Engineering, Hefei University of Technology, Hefei, China
- Key Laboratory of Measuring Theory and Precision Instrument, Hefei University of Technology, Hefei, China
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Choi YJ, Jo SB, Cho JH. Monolithic Tandem Multicolor Image Sensor Based on Electrochromic Color-Radix Demultiplexing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2102725. [PMID: 34297459 DOI: 10.1002/adma.202102725] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Revised: 05/17/2021] [Indexed: 06/13/2023]
Abstract
Optical data acquisition has been set as one of the milestones to testify the developments aimed at harnessing the full potential of the spatial and temporal data processing capabilities of the advanced semiconductor technology. A highly promising approach to drive the level of acquisition beyond the current technological node is the vertical integration of multiple photodetectors. However, vertical integration so far requires the same level of circuit complexity as lateral integration from the incapability of monolithic integration. Here, an electrochromic device architecture is introduced that enables realization of a monolithic tandem multicolor photodetector. The device, composed of vertically stacked p-type and n-type graphene barristors, is demonstrated to be capable of regulating the balanced charge transport under any desired illumination wavelengths. It exhibits variable anti-ambipolar charge transport behavior, which yields sensitive voltage-controlled photoconductive gain spectra. These electrical behaviors are utilized to fabricate an optoelectronic logic sensor that can demultiplex the desired color coordinate or wavelength in the constituent array with high color accuracy.
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Affiliation(s)
- Young Jin Choi
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
| | - Sae Byeok Jo
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
- Nano Science and Technology Research Institute, Yonsei University, Seoul, 03722, Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul, 03722, Korea
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Chen J, Zhou Y, Fu Y, Pan J, Mohammed OF, Bakr OM. Oriented Halide Perovskite Nanostructures and Thin Films for Optoelectronics. Chem Rev 2021; 121:12112-12180. [PMID: 34251192 DOI: 10.1021/acs.chemrev.1c00181] [Citation(s) in RCA: 31] [Impact Index Per Article: 10.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/23/2022]
Abstract
Oriented semiconductor nanostructures and thin films exhibit many advantageous properties, such as directional exciton transport, efficient charge transfer and separation, and optical anisotropy, and hence these nanostructures are highly promising for use in optoelectronics and photonics. The controlled growth of these structures can facilitate device integration to improve optoelectronic performance and benefit in-depth fundamental studies of the physical properties of these materials. Halide perovskites have emerged as a new family of promising and cost-effective semiconductor materials for next-generation high-power conversion efficiency photovoltaics and for versatile high-performance optoelectronics, such as light-emitting diodes, lasers, photodetectors, and high-energy radiation imaging and detectors. In this Review, we summarize the advances in the fabrication of halide perovskite nanostructures and thin films with controlled dimensionality and crystallographic orientation, along with their applications and performance characteristics in optoelectronics. We examine the growth methods, mechanisms, and fabrication strategies for several technologically relevant structures, including nanowires, nanoplates, nanostructure arrays, single-crystal thin films, and highly oriented thin films. We highlight and discuss the advantageous photophysical properties and remarkable performance characteristics of oriented nanostructures and thin films for optoelectronics. Finally, we survey the remaining challenges and provide a perspective regarding the opportunities for further progress in this field.
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Affiliation(s)
- Jie Chen
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.,School of Chemical Engineering and Technology, Xi'an Jiaotong University, Xi'an 710049, China
| | - Yang Zhou
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yongping Fu
- College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Jun Pan
- College of Materials Science and Engineering, Zhejiang University of Technology, Hangzhou 310014, People's Republic of China
| | - Omar F Mohammed
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Osman M Bakr
- Division of Physical Science and Engineering (PSE) and KAUST Catalysis Center (KCC), Advanced Membranes and Porous Materials Center (AMPMC), King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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Wang X, Gao SJ, Han JF, Zhang YL, Zhang S, Qiao WQ, Wang ZY. Effect of 1,8-Diiodooctane Content on the Performance of P3HT:PC61BM Bulk Heterojunction Photodetectors. CHINESE JOURNAL OF POLYMER SCIENCE 2021. [DOI: 10.1007/s10118-021-2548-5] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/28/2022]
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12
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Zhao H, Yan Y, Song X, Ma Z, Tian T, Jiang Y, Li X, Xia C, Li J. Few-layer In 4/3P 2Se 6 nanoflakes for high detectivity photodetectors. NANOSCALE 2021; 13:3757-3766. [PMID: 33555284 DOI: 10.1039/d0nr07987a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Metal phosphorus trichalcogenides (MPX3) have attracted extensive attention as promising two-dimensional (2D) layered materials in future electronic and optoelectronic devices. Here, for the first time, few-layer In4/3P2Se6 nanoflakes have been successfully exfoliated from home-made high-quality single crystals. The In4/3P2Se6 crystal belongs to the R3 space group, and possesses a weak van der Waals force between the adjacent layers and a direct bandgap of 1.99 eV. Furthermore, the In4/3P2Se6-based photodetectors show high performances in the visible light region, such as a high responsivity (R) of 4.93 A·W-1, a high external quantum efficiency (EQE) of 1509% and a fast response time, as low as 2.1 ms. In particular, the high detectivity (D) of the devices can reach up to 4.3 × 1013 Jones (light ON/OFF ratio ≈104) under illumination from a 405 nm light at a bias voltage of 1 V, which is favoured by the ultralow dark current (∼100 fA). These excellent performances pave the way for the implementation of In4/3P2Se6 nanoflakes as promising candidates for future optoelectronic detection applications.
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Affiliation(s)
- Hongxiao Zhao
- School of Physics, Henan Key Laboratory of Photovoltaic Materials, Henan Normal University, Henan 453007, China.
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