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Qiao P, Xia J, Li X, Li Y, Cao J, Zhang Z, Lu H, Meng Q, Li J, Meng XM. Epitaxial van der Waals contacts of 2D TaSe 2-WSe 2 metal-semiconductor heterostructures. NANOSCALE 2023; 15:17036-17044. [PMID: 37846513 DOI: 10.1039/d3nr03538g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/18/2023]
Abstract
The electronic contact between two-dimensional (2D) transition metal dichalcogenide (TMD) semiconductors and metal electrodes is a formidable challenge due to the undesired Schottky barrier, which severely limits the electrical performance of TMD devices and impedes the exploration of their unconventional physical properties and potential electronic applications. In this study, we report a two-step chemical vapor deposition (CVD) growth of 2D TaSe2-WSe2 metal-semiconductor heterostructures. Raman mapping confirms the precise spatial modulation of the as-grown 2D TaSe2-WSe2 heterostructures. Transmission electron microscopy (TEM) characterization reveals that this two-step method provides a high-quality and clean interface of the 2D TaSe2-WSe2 heterostructures. Meanwhile, the upper 1T-TaSe2 is formed heteroepitaxially on/around the pre-synthesized 2H-WSe2 monolayers, exhibiting an epitaxial relationship of (20-20)TaSe2//(20-20)WSe2 and [0001]TaSe2//[0001]WSe2. Furthermore, characterization studies using a Kelvin probe force microscope (KPFM) and electrical transport measurements present compelling evidence that the 2D metal-semiconductor heterostructures under investigation can improve the performance of electrical devices. These results bear substantial significance in augmenting the properties of field-effect transistors (FETs), leading to notable improvements in FET mobility and on/off ratio. Our study not only broadens the horizons of direct growth of high-quality 2D metal-semiconductor heterostructures but also sheds light on potential applications in future high-performance integrated circuits.
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Affiliation(s)
- Peiyu Qiao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Jing Xia
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Xuanze Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Yuye Li
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Jianyu Cao
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Zhongshi Zhang
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Heng Lu
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
| | - Qing Meng
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
- Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Jiangtao Li
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
- Key Laboratory of Cryogenics, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
| | - Xiang-Min Meng
- Key Laboratory of Photochemical Conversion and Optoelectronic Materials, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China.
- Centre of Material Science and Optoelectronic Engineering, University of Chinese Academy of Science, Beijing, 10049, P. R. China
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Moon S, Kim J, Park J, Im S, Kim J, Hwang I, Kim JK. Hexagonal Boron Nitride for Next-Generation Photonics and Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204161. [PMID: 35735090 DOI: 10.1002/adma.202204161] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/09/2022] [Revised: 06/14/2022] [Indexed: 06/15/2023]
Abstract
Hexagonal boron nitride (h-BN), an insulating 2D layered material, has recently attracted tremendous interest motivated by the extraordinary properties it shows across the fields of optoelectronics, quantum optics, and electronics, being exotic material platforms for various applications. At an early stage of h-BN research, it is explored as an ideal substrate and insulating layers for other 2D materials due to its atomically flat surface that is free of dangling bonds and charged impurities, and its high thermal conductivity. Recent discoveries of structural and optical properties of h-BN have expanded potential applications into emerging electronics and photonics fields. h-BN shows a very efficient deep-ultraviolet band-edge emission despite its indirect-bandgap nature, as well as stable room-temperature single-photon emission over a wide wavelength range, showing a great potential for next-generation photonics. In addition, h-BN is extensively being adopted as active media for low-energy electronics, including nonvolatile resistive switching memory, radio-frequency devices, and low-dielectric-constant materials for next-generation electronics.
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Affiliation(s)
- Seokho Moon
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jiye Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jeonghyeon Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Semi Im
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jawon Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Inyong Hwang
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
| | - Jong Kyu Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang, 37673, Republic of Korea
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3
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Myeong G, Shin W, Sung K, Kim S, Lim H, Kim B, Jin T, Park J, Lee T, Fuhrer MS, Watanabe K, Taniguchi T, Liu F, Cho S. Dirac-source diode with sub-unity ideality factor. Nat Commun 2022; 13:4328. [PMID: 35882859 PMCID: PMC9325700 DOI: 10.1038/s41467-022-31849-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Accepted: 07/05/2022] [Indexed: 11/23/2022] Open
Abstract
An increase in power consumption necessitates a low-power circuit technology to extend Moore’s law. Low-power transistors, such as tunnel field-effect transistors (TFETs), negative-capacitance field-effect transistors (NC-FETs), and Dirac-source field-effect transistors (DS-FETs), have been realised to break the thermionic limit of the subthreshold swing (SS). However, a low-power rectifier, able to overcome the thermionic limit of an ideality factor (η) of 1 at room temperature, has not been proposed yet. In this study, we have realised a DS diode based on graphene/MoS2/graphite van der Waals heterostructures, which exhibits a steep-slope characteristic curve, by exploiting the linear density of states (DOSs) of graphene. For the developed DS diode, we obtained η < 1 for more than four decades of drain current (ηave_4dec < 1) with a minimum value of 0.8, and a rectifying ratio exceeding 108. The realisation of a DS diode represents an additional step towards the development of low-power electronic circuits. While different types of low-power transistors have been investigated, low voltage rectifiers able to overcome the thermionic limit have not been proposed yet. Here, the authors report the realization of Dirac-source diodes based on graphene/MoS2/graphite heterostructures, showing ideality factors <1 and rectifying ratios exceeding 108 at room temperature.
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Affiliation(s)
- Gyuho Myeong
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Wongil Shin
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Kyunghwan Sung
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Seungho Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Hongsik Lim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Boram Kim
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Taehyeok Jin
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Jihoon Park
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Taehun Lee
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea
| | - Michael S Fuhrer
- ARC Centre of Excellence in Future Low-Energy Electronics Technologies, and School of Physics and Astronomy, Monash University, Clayton, Victoria, 3800, Australia
| | - Kenji Watanabe
- National Institute for Materials Science, Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Takashi Taniguchi
- National Institute for Materials Science, Namiki, Tsukuba, Ibaraki, 305-0044, Japan
| | - Fei Liu
- School of Integrated Circuits, Peking University, Beijing, 100871, China. .,Beijing Advanced Innovation Center for Integrated Circuits, Beijing, 100871, China.
| | - Sungjae Cho
- Department of Physics, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, Korea.
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Phan NAN, Noh H, Kim J, Kim Y, Kim H, Whang D, Aoki N, Watanabe K, Taniguchi T, Kim GH. Enhanced Performance of WS 2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2105753. [PMID: 35112797 DOI: 10.1002/smll.202105753] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/20/2021] [Revised: 12/20/2021] [Indexed: 06/14/2023]
Abstract
Transition metal dichalcogenides (TMDs) are of great interest owing to their unique properties. However, TMD materials face two major challenges that limit their practical applications: contact resistance and surface contamination. Herein, a strategy to overcome these problems by inserting a monolayer of hexagonal boron nitride (h-BN) at the chromium (Cr) and tungsten disulfide (WS2 ) interface is introduced. Electrical behaviors of direct metal-semiconductor (MS) and metal-insulator-semiconductor (MIS) contacts with mono- and bilayer h-BN in a four-layer WS2 field-effect transistor (FET) are evaluated under vacuum from 77 to 300 K. The performance of the MIS contacts differs based on the metal work function when using Cr and indium (In). The contact resistance is significantly reduced by approximately ten times with MIS contacts compared with that for MS contacts. An electron mobility up to ≈115 cm2 V-1 s-1 at 300 K is achieved with the insertion of monolayer h-BN, which is approximately ten times higher than that with MS contacts. The mobility and contact resistance enhancement are attributed to Schottky barrier reduction when h-BN is introduced between Cr and WS2 . The dependence of the tunneling mechanisms on the h-BN thickness is investigated by extracting the tunneling barrier parameters.
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Affiliation(s)
- Nhat Anh Nguyen Phan
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hamin Noh
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Jihoon Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Yewon Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hanul Kim
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Dongmok Whang
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- School of Advanced Materials Science and Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Nobuyuki Aoki
- Department of Materials Science, Chiba University, Chiba, 263-8522, Japan
| | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Material Nano-Architectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Gil-Ho Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
- Samsung-SKKU Graphene Centre, Sungkyunkwan Advanced Institute of Nanotechnology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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Zhang X, Kang Z, Gao L, Liu B, Yu H, Liao Q, Zhang Z, Zhang Y. Molecule-Upgraded van der Waals Contacts for Schottky-Barrier-Free Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2104935. [PMID: 34569109 DOI: 10.1002/adma.202104935] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/28/2021] [Revised: 08/02/2021] [Indexed: 06/13/2023]
Abstract
The applications of any ultrathin semiconductor device are inseparable from high-quality metal-semiconductor contacts with designed Schottky barriers. Building van der Waals (vdWs) contacts of 2D semiconductors represents an advanced strategy of lowering the Schottky barrier height by reducing interface states, but will finally fail at the theoretical minimum barrier due to the inevitable energy difference between the semiconductor electron affinity and the metal work function. Here, an effective molecule optimization strategy is reported to upgrade the general vdWs contacts, achieving near-zero Schottky barriers and creating high-performance electronic devices. The molecule treatment can induce the defect healing effect in p-type semiconductors and further enhance the hole density, leading to an effectively thinned Schottky barrier width and improved carrier interface transmission efficiency. With an ultrathin Schottky barrier width of ≈2.17 nm and outstanding contact resistance of ≈9 kΩ µm in the optimized Au/WSe2 contacts, an ultrahigh field-effect mobility of ≈148 cm2 V-1 s-1 in chemical vapor deposition grown WSe2 flakes is achieved. Unlike conventional chemical treatments, this molecule upgradation strategy leaves no residue and displays a high-temperature stability at >200 °C. Furthermore, the Schottky barrier optimization is generalized to other metal-semiconductor contacts, including 1T-PtSe2 /WSe2 , 1T'-MoTe2 /WSe2 , 2H-NbS2 /WSe2 , and Au/PdSe2 , defining a simple, universal, and scalable method to minimize contact resistance.
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Affiliation(s)
- Xiankun Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zhuo Kang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Li Gao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Baishan Liu
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Huihui Yu
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Qingliang Liao
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Zheng Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
| | - Yue Zhang
- Academy for Advanced Interdisciplinary Science and Technology, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- Beijing Advanced Innovation Center for Materials Genome Engineering, Beijing Key Laboratory for Advanced Energy Materials and Technologies, University of Science and Technology Beijing, Beijing, 100083, P. R. China
- State Key Laboratory for Advanced Metals and Materials, School of Materials Science and Engineering, University of Science and Technology Beijing, Beijing, 100083, P. R. China
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Zhang Y, Xu W, Liu G, Zhang Z, Zhu J, Li M. Bandgap prediction of two-dimensional materials using machine learning. PLoS One 2021; 16:e0255637. [PMID: 34388173 PMCID: PMC8363013 DOI: 10.1371/journal.pone.0255637] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [MESH Headings] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/18/2021] [Accepted: 07/20/2021] [Indexed: 11/18/2022] Open
Abstract
The bandgap of two-dimensional (2D) materials plays an important role in their applications to various devices. For instance, the gapless nature of graphene limits the use of this material to semiconductor device applications, whereas the indirect bandgap of molybdenum disulfide is suitable for electrical and photo-device applications. Therefore, predicting the bandgap rapidly and accurately for a given 2D material structure has great scientific significance in the manufacturing of semiconductor devices. Compared to the extremely high computation cost of conventional first-principles calculations, machine learning (ML) based on statistics may be a promising alternative to predicting bandgaps. Although ML algorithms have been used to predict the properties of materials, they have rarely been used to predict the properties of 2D materials. In this study, we apply four ML algorithms to predict the bandgaps of 2D materials based on the computational 2D materials database (C2DB). Gradient boosted decision trees and random forests are more effective in predicting bandgaps of 2D materials with an R2 >90% and root-mean-square error (RMSE) of ~0.24 eV and 0.27 eV, respectively. By contrast, support vector regression and multi-layer perceptron show that R2 is >70% with RMSE of ~0.41 eV and 0.43 eV, respectively. Finally, when the bandgap calculated without spin-orbit coupling (SOC) is used as a feature, the RMSEs of the four ML models decrease greatly to 0.09 eV, 0.10 eV, 0.17 eV, and 0.12 eV, respectively. The R2 of all the models is >94%. These results show that the properties of 2D materials can be rapidly obtained by ML prediction with high precision.
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Affiliation(s)
- Yu Zhang
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
- * E-mail: (YZ); (GL)
| | - Wenjing Xu
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
| | - Guangjie Liu
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
- * E-mail: (YZ); (GL)
| | - Zhiyong Zhang
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
| | - Jinlong Zhu
- Department of Computer Science and Technology, Changchun Normal University, Changchun, China
| | - Meng Li
- College of Information Science and Engineering, Shenyang University of Technology, Shenyang, China
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7
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Zhang B, Liu J, Ren M, Wu C, Moran TJ, Zeng S, Chavez SE, Hou Z, Li Z, LaChance AM, Jow TR, Huey BD, Cao Y, Sun L. Reviving the "Schottky" Barrier for Flexible Polymer Dielectrics with a Superior 2D Nanoassembly Coating. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2021; 33:e2101374. [PMID: 34288156 DOI: 10.1002/adma.202101374] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/17/2021] [Revised: 05/12/2021] [Indexed: 06/13/2023]
Abstract
The organic insulator-metal interface is the most important junction in flexible electronics. The strong band offset of organic insulators over the Fermi level of electrodes should theoretically impart a sufficient impediment for charge injection known as the Schottky barrier. However, defect formation through Anderson localization due to topological disorder in polymers leads to reduced barriers and hence cumbersome devices. A facile nanocoating comprising hundreds of highly oriented organic/inorganic alternating nanolayers is self-coassembled on the surface of polymer films to revive the Schottky barrier. Carrier injection over the enhanced barrier is further shunted by anisotropic 2D conduction. This new interface engineering strategy allows a significant elevation of the operating field for organic insulators by 45% and a 7× improvement in discharge efficiency for Kapton at 150 °C. This superior 2D nanocoating thus provides a defect-tolerant approach for effective reviving of the Schottky barrier, one century after its discovery, broadly applicable for flexible electronics.
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Affiliation(s)
- Boya Zhang
- Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Jingjing Liu
- Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Ming Ren
- Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
| | - Chao Wu
- Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Thomas J Moran
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Songshan Zeng
- Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Sonia E Chavez
- Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Zaili Hou
- Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Zongze Li
- Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Anna Marie LaChance
- Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - T Richard Jow
- U.S. Army Research Laboratory, Adelphi, MD, 20783, USA
| | - Bryan D Huey
- Department of Materials Science and Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Yang Cao
- Electrical Insulation Research Center, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Electrical and Computer Engineering, University of Connecticut, Storrs, CT, 06269, USA
| | - Luyi Sun
- Polymer Program, Institute of Materials Science, University of Connecticut, Storrs, CT, 06269, USA
- Department of Chemical and Biomolecular Engineering, University of Connecticut, Storrs, CT, 06269, USA
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