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Li Z, Pal K, Lee H, Wolverton C, Xia Y. Electron-Phonon Interaction Mediated Gigantic Enhancement of Thermoelectric Power Factor Induced by Topological Phase Transition. NANO LETTERS 2024; 24:5816-5823. [PMID: 38684443 DOI: 10.1021/acs.nanolett.4c01008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/02/2024]
Abstract
We propose an effective strategy to significantly enhance the thermoelectric power factor (PF) of a series of 2D semimetals and semiconductors by driving them toward a topological phase transition (TPT). Employing first-principles calculations with an explicit consideration of electron-phonon interactions, we analyze the electronic transport properties of germanene across the TPT by applying hydrogenation and biaxial strain. We reveal that the nontrivial semimetal phase, hydrogenated germanene with 8% biaxial strain, achieves a considerable 4-fold PF enhancement, attributed to the highly asymmetric electronic structure and semimetallic nature of the nontrivial phase. We extend the strategy to another two representative 2D materials (stanene and HgSe) and observe a similar trend, with a marked 7-fold and 5-fold increase in PF, respectively. The wide selection of functional groups, universal applicability of biaxial strain, and broad spectrum of 2D semimetals and semiconductors render our approach highly promising for designing novel 2D materials with superior thermoelectric performance.
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Affiliation(s)
- Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Koushik Pal
- Department of Physics, Indian Institute of Technology Kanpur, Kanpur, UP 208016, India
| | - Huiju Lee
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
| | - Chris Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Yi Xia
- Department of Mechanical and Materials Engineering, Portland State University, Portland, Oregon 97201, United States
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2
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Laha A, Yoshida S, Marques Dos Santos Vieira F, Yi H, Lee SH, Ayyagari SVG, Guan Y, Min L, Gonzalez Jimenez J, Miao L, Graf D, Sarker S, Xie W, Alem N, Gopalan V, Chang CZ, Dabo I, Mao Z. High-entropy engineering of the crystal and electronic structures in a Dirac material. Nat Commun 2024; 15:3532. [PMID: 38670964 PMCID: PMC11053097 DOI: 10.1038/s41467-024-47781-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2023] [Accepted: 04/11/2024] [Indexed: 04/28/2024] Open
Abstract
Dirac and Weyl semimetals are a central topic of contemporary condensed matter physics, and the discovery of new compounds with Dirac/Weyl electronic states is crucial to the advancement of topological materials and quantum technologies. Here we show a widely applicable strategy that uses high configuration entropy to engineer relativistic electronic states. We take the AMnSb2 (A = Ba, Sr, Ca, Eu, and Yb) Dirac material family as an example and demonstrate that mixing of Ba, Sr, Ca, Eu and Yb at the A site generates the compound (Ba0.38Sr0.14Ca0.16Eu0.16Yb0.16)MnSb2 (denoted as A5MnSb2), giving access to a polar structure with a space group that is not present in any of the parent compounds. A5MnSb2 is an entropy-stabilized phase that preserves its linear band dispersion despite considerable lattice disorder. Although both A5MnSb2 and AMnSb2 have quasi-two-dimensional crystal structures, the two-dimensional Dirac states in the pristine AMnSb2 evolve into a highly anisotropic quasi-three-dimensional Dirac state triggered by local structure distortions in the high-entropy phase, which is revealed by Shubnikov-de Haas oscillations measurements.
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Affiliation(s)
- Antu Laha
- Department of Physics, Pennsylvania State University, University Park, PA, USA
| | - Suguru Yoshida
- Department of Physics, Pennsylvania State University, University Park, PA, USA.
- 2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA, USA.
| | | | - Hemian Yi
- Department of Physics, Pennsylvania State University, University Park, PA, USA
| | - Seng Huat Lee
- Department of Physics, Pennsylvania State University, University Park, PA, USA
- 2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA, USA
| | | | - Yingdong Guan
- Department of Physics, Pennsylvania State University, University Park, PA, USA
| | - Lujin Min
- Department of Physics, Pennsylvania State University, University Park, PA, USA
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | | | - Leixin Miao
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - David Graf
- National High Magnetic Field Laboratory, Tallahassee, FL, USA
| | - Saugata Sarker
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Weiwei Xie
- Department of Chemistry, Michigan State University, East Lansing, MI, USA
| | - Nasim Alem
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Venkatraman Gopalan
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA
| | - Cui-Zu Chang
- Department of Physics, Pennsylvania State University, University Park, PA, USA
| | - Ismaila Dabo
- Department of Physics, Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA.
| | - Zhiqiang Mao
- Department of Physics, Pennsylvania State University, University Park, PA, USA.
- 2D Crystal Consortium, Materials Research Institute, Pennsylvania State University, University Park, PA, USA.
- Department of Materials Science and Engineering, Pennsylvania State University, University Park, PA, USA.
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3
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Marfoua B, Hong J. First-Principles Investigation of Simultaneous Thermoelectric Power Generation and Active Cooling in a Bifunctional Semimetal ZrSeTe Janus Structure. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:234. [PMID: 38276752 PMCID: PMC10818368 DOI: 10.3390/nano14020234] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/18/2023] [Revised: 01/11/2024] [Accepted: 01/16/2024] [Indexed: 01/27/2024]
Abstract
Traditional thermoelectric materials often face a trade-off between efficient power generation (high ZT) and cooling performance. Here, we explore the potential of achieving simultaneous thermoelectric power generation and cooling capability in the recently fabricated bulk ZrSeTe Janus structure using first-principles density functional theory (DFT). The layered ZrSeTe Janus structure exhibits a semimetal character with anisotropic transport properties along the in-plane and out-of-plane directions. Our DFT calculations, including the explicit calculation of relaxation time, reveal a maximum ZT of ~0.065 in the out-of-plane direction at 300 K which is one order of magnitude larger than that in the in-plane direction (ZT~0.006). Furthermore, the thermoelectric cooling performance is also investigated. The in-plane direction shows a cooling performance of 13 W/m·K and a coefficient of performance (COPmax) of ~90 with a temperature difference (ΔT) of 30 K, while the out-of-plane direction has a cooling performance of 2.5 W/m·K and COPmax of ~2.5. Thus, the out-of-plane current from the thermoelectric power generation can be utilized as an in-plane current source for active heat pumping. Consequently, we propose that the semimetal ZrSeTe Janus structure can display bifunctional thermoelectric properties for simultaneous thermoelectric power generation and active cooling.
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Affiliation(s)
| | - Jisang Hong
- Department of Physics, Pukyong National University, Busan 48513, Republic of Korea;
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4
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Guo M, Liu M, Zhu J, Zhu Y, Guo F, Cai W, Zhang Y, Zhang Q, Sui J. Mechanism of Thermoelectric Performance Enhancement in CaMg 2 Bi 2 -Based Materials with Different Cation Site Doping. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306251. [PMID: 37691045 DOI: 10.1002/smll.202306251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/24/2023] [Revised: 08/29/2023] [Indexed: 09/12/2023]
Abstract
Chemical bonds determine electron and phonon transport in solids. Tailoring chemical bonding in thermoelectric materials causes desirable or compromise thermoelectric transport properties. In this work, taking an example of CaMg2 Bi2 with covalent and ionic bonds, density functional theory calculations uncover that element Zn, respectively, replacing Ca and Mg sites cause the weakness of ionic and covalent bonding. Electrically, Zn doping at both Ca and Mg sites increases carrier concentration, while the former leads to higher carrier concentration than that of the latter because of its lower vacancy formation energy. Both doping types increase density-of-state effective mass but their mechanisms are different. The Zn doping Ca site induces resonance level in valence band and Zn doping Mg site promotes orbital alignment. Thermally, point defect and the change of phonon dispersion introduced by doping result in pronounced reduction of lattice thermal conductivity. Finally, combining with the further increase of carrier concentration caused by Na doping and the modulation of band structure and the decrease of lattice thermal conductivity caused by Ba doping, a high figure-of-merit ZT of 1.1 at 823 K in Zn doping Ca sample is realized, which is competitive in 1-2-2 Zintl phase thermoelectric systems.
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Affiliation(s)
- Muchun Guo
- School of Materials Science and Engineering, Xihua University, Chengdu, 610039, China
| | - Ming Liu
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Jianbo Zhu
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Yuke Zhu
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Fengkai Guo
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Wei Cai
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
| | - Yongsheng Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, 273165, China
| | - QinYong Zhang
- School of Materials Science and Engineering, Xihua University, Chengdu, 610039, China
| | - Jiehe Sui
- National Key Laboratory for Precision Hot Processing of Metals, Harbin Institute of Technology, Harbin, 150001, China
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Baidak ST, Lukoyanov AV. Semimetallic, Half-Metallic, Semiconducting, and Metallic States in Gd-Sb Compounds. Int J Mol Sci 2023; 24:ijms24108778. [PMID: 37240125 DOI: 10.3390/ijms24108778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/12/2023] [Revised: 05/08/2023] [Accepted: 05/11/2023] [Indexed: 05/28/2023] Open
Abstract
The electronic and band structures of the Gd- and Sb-based intermetallic materials have been explored using the theoretical ab initio approach, accounting for strong electron correlations of the Gd-4f electrons. Some of these compounds are being actively investigated because of topological features in these quantum materials. Five compounds were investigated theoretically in this work to demonstrate the variety of electronic properties in the Gd-Sb-based family: GdSb, GdNiSb, Gd4Sb3, GdSbS2O, and GdSb2. The GdSb compound is a semimetal with the topological nonsymmetric electron pocket along the high-symmetry points Γ-X-W, and hole pockets along the L-Γ-X path. Our calculations show that the addition of nickel to the system results in the energy gap, and we obtained a semiconductor with indirect gap of 0.38 eV for the GdNiSb intermetallic compound. However, a quite different electronic structure has been found in the chemical composition Gd4Sb3; this compound is a half-metal with the energy gap of 0.67 eV only in the minority spin projection. The molecular GdSbS2O compound with S and O in it is found to be a semiconductor with a small indirect gap. The GdSb2 intermetallic compound is found to have a metallic state in the electronic structure; remarkably, the band structure of GdSb2 has a Dirac-cone-like feature near the Fermi energy between high-symmetry points Г and S, and these two Dirac cones are split by spin-orbit coupling. Thus, studying the electronic and band structure of several reported and new Gd-Sb compounds revealed a variety of the semimetallic, half-metallic, semiconducting, or metallic states, as well topological features in some of them. The latter can lead to outstanding transport and magnetic properties, such as a large magnetoresistance, which makes Gd-Sb-based materials very promising for applications.
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Affiliation(s)
- Semyon T Baidak
- Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia
- M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia
| | - Alexey V Lukoyanov
- Institute of Physics and Technology, Ural Federal University Named after the First President of Russia B.N. Yeltsin, 620002 Ekaterinburg, Russia
- M.N. Mikheev Institute of Metal Physics of Ural Branch of Russian Academy of Sciences, 620108 Ekaterinburg, Russia
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Wang H, Zhou Z, Ying J, Xiang Z, Wang R, Wang A, Chai Y, He M, Lu X, Han G, Pan Y, Wang G, Zhou X, Chen X. Large Magneto-Transverse and Longitudinal Thermoelectric Effects in the Magnetic Weyl Semimetal TbPtBi. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206941. [PMID: 36300801 DOI: 10.1002/adma.202206941] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 10/04/2022] [Indexed: 06/16/2023]
Abstract
Magnetic topological semimetals provide new opportunities for power generation and solid-state cooling based on thermoelectric (TE) effect. The interplay between magnetism and nontrivial band topology prompts the magnetic topological semimetals to yield strong transverse TE effect, while the longitudinal TE performance is usually poor. Herein, it is demonstrated that the magnetic Weyl semimetal TbPtBi has high value for both transverse and longitudinal thermopower with large power factor (PF). At 300 K and 13.5 Tesla, the transverse thermopower and PF reach up to 214 µV K-1 and 35 µW cm-1 K-2 , respectively, which are comparable to those of state-of-the-art TE materials. Combining first-principles calculations, longitudinal magnetoresistance and planar Hall resistance measurements, and two-band model fitting, the large transverse thermopower and PF are attributed to both bipolar effect and large Hall angle. Moreover, the imperfectly compensated charge carriers and large transverse magnetoresistance induce the maximum magneto-longitudinal thermopower of 251 µV K-1 with a PF of 24 µW cm-1 K-2 at 150 K and 13.5 Tesla, which is two times higher than that at zero magnetic field. This work demonstrates the great potential of topological semimetals for TEs and offers a new excellent candidate for magneto-TEs.
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Affiliation(s)
- Honghui Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Zizhen Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Jianjun Ying
- CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Ziji Xiang
- CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
| | - Rui Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Aifeng Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Yisheng Chai
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Mingquan He
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Xu Lu
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
| | - Guang Han
- College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P. R. China
| | - Yu Pan
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Guoyu Wang
- College of Materials Science and Engineering, Chongqing University, Chongqing, 400044, P. R. China
| | - Xiaoyuan Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing, 401331, P. R. China
- Analytical and Testing Center, Chongqing University, Chongqing, 401331, P. R. China
| | - Xianhui Chen
- CAS Key Laboratory of Strongly-coupled Quantum Matter Physics, and Department of Physics, University of Science and Technology of China, Hefei, Anhui, 230026, P. R. China
- High Magnetic Field Laboratory of the Chinese Academy of Sciences, Hefei, Anhui, 230031, P. R. China
- Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing, 210093, P. R. China
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7
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Shi Q, Li J, Zhao X, Chen Y, Zhang F, Zhong Y, Ang R. Comprehensive Insight into p-Type Bi 2Te 3-Based Thermoelectrics near Room Temperature. ACS APPLIED MATERIALS & INTERFACES 2022; 14:49425-49445. [PMID: 36301226 DOI: 10.1021/acsami.2c13109] [Citation(s) in RCA: 4] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Bi2Te3 is a well-recognized material for its unique properties in diverse thermoelectric applications near room temperature. The considerable efforts on Bi2Te3-based alloys have been extremely extensive in recent years, and thus the latest breakthroughs in high-performance p-type (Bi, Sb)2Te3 alloys are comprehensively reviewed to further implement applications. Effective strategies to further improve the thermoelectric performance are summarized from the perspective of enhancing the power factor and minimizing the lattice thermal conductivity. Furthermore, the surface states of topological insulators are investigated to provide a possibility of advancing (Bi, Sb)2Te3 thermoelectrics. Finally, future challenges and outlooks are overviewed. This review will provide potential guidance toward designing and developing high-efficient Bi2Te3-based and other thermoelectrics.
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Affiliation(s)
- Qing Shi
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Juan Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen518055, China
| | - Xuanwei Zhao
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Yiyuan Chen
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Fujie Zhang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Yan Zhong
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
| | - Ran Ang
- Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu610064, China
- Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu610065, China
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8
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Liu Y, Hu Z, Ogunbunmi MO, Stavitski E, Attenkofer K, Bobev S, Petrovic C. Giant Thermoelectric Power Factor Anisotropy in PtSb 1.4Sn 0.6. Inorg Chem 2022; 61:13586-13590. [PMID: 35972888 DOI: 10.1021/acs.inorgchem.2c02218] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
We report on the giant anisotropy found in the thermoelectric power factor (S2σ) of marcasite structure-type PtSb1.4Sn0.6 single crystal. PtSb1.4Sn0.6, synthesized using an ambient pressure flux growth method upon mixing Sb and Sn on the same atomic site, is a new phase different from both PtSb2 and PtSn2, which crystallize in the cubic Pa3̅ pyrite and Fm3̅m fluorite unit cell symmetry, respectively. The large difference in S2σ for heat flow applied along different principal directions of the orthorhombic unit cell stems mostly from anisotropic Seebeck coefficients.
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Affiliation(s)
| | - Zhixiang Hu
- Materials Science and Chemical Engineering Department, Stony Brook University, Stony Brook, New York 11790, United States
| | - Michael O Ogunbunmi
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States
| | | | | | - Svilen Bobev
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States
| | - Cedomir Petrovic
- Materials Science and Chemical Engineering Department, Stony Brook University, Stony Brook, New York 11790, United States
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9
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Sk S, Shahi N, Pandey SK. Experimental and computational approaches to study the high temperature thermoelectric properties of novel topological semimetal CoSi. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2022; 34:265901. [PMID: 35390770 DOI: 10.1088/1361-648x/ac655a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/24/2021] [Accepted: 04/07/2022] [Indexed: 06/14/2023]
Abstract
Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range 300-800 K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting technique and the Rietveld refinement gives the lattice parameters ofa=b=c= 4.445 Å. The measured values of Seebeck coefficient (S) shows the non-monotonic behaviour in the studied temperature range with the value of ∼-81μV K-1at room temperature. The |S| first increases till 560 K (∼-93μV K-1) and then decreases up to 800 K (∼-84μV K-1) indicating the dominating n-type behaviour in the full temperature range. The electrical conductivity,σ(thermal conductivity,κ) shows the monotonic decreasing (increasing) behaviour with the values of∼5.2×105(12.1 W m-1 K-1) and∼3.6×105(14.2 W m-1 K-1) Ω-1 m-1at 300 K and 800 K, respectively. Theκexhibits the temperature dependency as,κ∝T0.16. The DFT based Boltzmann transport theory is used to understand these behaviour. The multi-band electron and hole pockets appear to be mainly responsible for deciding the temperature dependent transport behaviour. Specifically, the decrease in the |S| above 560 K and change in the slope ofσaround 450 K are due to the contribution of thermally generated charge carriers from the hole pockets. The temperature dependent relaxation time (τ) is computed by comparing the experimentalσwith calculatedσ/τand it shows temperature dependency of 1/T0.35. Further this value ofτis used to calculate the temperature dependent electronic part of thermal conductivity (κe) and it gives a fairly good match with the experiment. Present study suggests that electronic band-structure obtained from DFT provides a reasonably good estimate of the transport coefficients of CoSi in the high temperature region of 300-800 K.
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Affiliation(s)
- Shamim Sk
- School of Basic Sciences, Indian Institute of Technology Mandi, Kamand-175075, India
| | - Nisha Shahi
- School of Materials Science and Technology, Indian Institute of Technology (Banaras Hindu University), Varanasi 221005, India
| | - Sudhir K Pandey
- School of Engineering, Indian Institute of Technology Mandi, Kamand-175075, India
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10
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Zhou Z, Peng K, Xiao S, Wei Y, Dai Q, Lu X, Wang G, Zhou X. Anomalous Thermoelectric Performance in Asymmetric Dirac Semimetal BaAgBi. J Phys Chem Lett 2022; 13:2291-2298. [PMID: 35244398 DOI: 10.1021/acs.jpclett.2c00379] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Multiple-band degeneracy has been widely recognized to be beneficial for high thermoelectric performance. Here, we discover that the p-type Dirac bands with lower degeneracy synergistically produce a higher Seebeck coefficient and electrical conductivity in topological semimetal BaAgBi. The anomalous transport phenomenon intrinsically originated from the asymmetric electronic structures: (i) complete p-type Dirac bands near the Fermi level facilitate high and strong energy-dependent hole relaxation time; (ii) the presence of additional parabolic conduction valleys allows for a large density of states to accept scattered electrons, leading to an enlarged hole-electron relaxation time ratio and, thus, weakened bipolar effect. In combination with the strong lattice anharmonicity, an exceptional p-type average ZT of 0.42 is achieved from 300 to 600 K, which can be dramatically enhanced to 1.38 via breaking the C3v symmetry. This work uncovers the underlying mechanisms governing the abnormal transport behavior in Dirac semimetal BaAgBi and highlights the asymmetric electronic structures as target features to discover/design high-performance thermoelectric materials.
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Affiliation(s)
- Zizhen Zhou
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Kunling Peng
- Department of Physics and Hefei National Laboratory for Physical Science at Microscale, University of Science and Technology of China, Hefei, Anhui 230026, People's Republic of China
| | - Shijuan Xiao
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Yiqing Wei
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Qinjin Dai
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Xu Lu
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
| | - Guoyu Wang
- Chongqing Institute of Green and Intelligent Technology, Chinese Academy of Science, Chongqing, Sichuan 400714, People's Republic of China
| | - Xiaoyuan Zhou
- Center of Quantum Materials and Devices, College of Physics, Chongqing University, Chongqing, Sichuan 401331, People's Republic of China
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11
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Pan Y, Le C, He B, Watzman SJ, Yao M, Gooth J, Heremans JP, Sun Y, Felser C. Giant anomalous Nernst signal in the antiferromagnet YbMnBi 2. NATURE MATERIALS 2022; 21:203-209. [PMID: 34811495 PMCID: PMC8810386 DOI: 10.1038/s41563-021-01149-2] [Citation(s) in RCA: 15] [Impact Index Per Article: 7.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/04/2021] [Accepted: 10/04/2021] [Indexed: 05/22/2023]
Abstract
A large anomalous Nernst effect (ANE) is crucial for thermoelectric energy conversion applications because the associated unique transverse geometry facilitates module fabrication. Topological ferromagnets with large Berry curvatures show large ANEs; however, they face drawbacks such as strong magnetic disturbances and low mobility due to high magnetization. Herein, we demonstrate that YbMnBi2, a canted antiferromagnet, has a large ANE conductivity of ~10 A m-1 K-1 that surpasses large values observed in other ferromagnets (3-5 A m-1 K-1). The canted spin structure of Mn guarantees a non-zero Berry curvature, but generates only a weak magnetization three orders of magnitude lower than that of general ferromagnets. The heavy Bi with a large spin-orbit coupling enables a large ANE and low thermal conductivity, whereas its highly dispersive px/y orbitals ensure low resistivity. The high anomalous transverse thermoelectric performance and extremely small magnetization make YbMnBi2 an excellent candidate for transverse thermoelectrics.
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Affiliation(s)
- Yu Pan
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
| | - Congcong Le
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Bin He
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Sarah J Watzman
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
- Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH, USA
- Department of Mechanical and Materials Engineering, University of Cincinnati, Cincinnati, OH, USA
| | - Mengyu Yao
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Johannes Gooth
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Joseph P Heremans
- Department of Mechanical and Aerospace Engineering, The Ohio State University, Columbus, OH, USA
- Department of Materials Science and Engineering, The Ohio State University, Columbus, OH, USA
- Department of Physics, The Ohio State University, Columbus, OH, USA
| | - Yan Sun
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany
| | - Claudia Felser
- Max Planck Institute for Chemical Physics of Solids, Dresden, Germany.
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Transport properties and thermal behavior of YbMnSb2 semimetal above room temperature. J SOLID STATE CHEM 2021. [DOI: 10.1016/j.jssc.2021.122467] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
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13
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Thermal Management Systems and Waste Heat Recycling by Thermoelectric Generators—An Overview. ENERGIES 2021. [DOI: 10.3390/en14185646] [Citation(s) in RCA: 11] [Impact Index Per Article: 3.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/20/2022]
Abstract
With the fast evolution in greenhouse gas (GHG) emissions (e.g., CO2, N2O) caused by fossil fuel combustion and global warming, climate change has been identified as a critical threat to the sustainable development of human society, public health, and the environment. To reduce GHG emissions, besides minimizing waste heat production at the source, an integrated approach should be adopted for waste heat management, namely, waste heat collection and recycling. One solution to enable waste heat capture and conversion into useful energy forms (e.g., electricity) is employing solid-state energy converters, such as thermoelectric generators (TEGs). The simplicity of thermoelectric generators enables them to be applied in various industries, specifically those that generate heat as the primary waste product at a temperature of several hundred degrees. Nevertheless, thermoelectric generators can be used over a broad range of temperatures for various applications; for example, at low temperatures for human body heat harvesting, at mid-temperature for automobile exhaust recovery systems, and at high temperatures for cement industries, concentrated solar heat exchangers, or NASA exploration rovers. We present the trends in the development of thermoelectric devices used for thermal management and waste heat recovery. In addition, a brief account is presented on the scientific development of TE materials with the various approaches implemented to improve the conversion efficiency of thermoelectric compounds through manipulation of Figure of Merit, a unitless factor indicative of TE conversion efficiency. Finally, as a case study, work on waste heat recovery from rotary cement kiln reactors is evaluated and discussed.
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Baranets S, Ovchinnikov A, Bobev S. Complex Structural Disorder in the Zintl Phases Yb 10MnSb 9 and Yb 21Mn 4Sb 18. Inorg Chem 2021; 60:6702-6711. [PMID: 33834776 DOI: 10.1021/acs.inorgchem.1c00519] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/30/2022]
Abstract
A systematic investigation of the ternary system Yb-Mn-Sb led to the discovery of the novel phase Yb10MnSb9. Its crystal structure was characterized by single-crystal X-ray diffraction and found to be complex and highly disordered. The average Yb10MnSb9 structure can be considered to represent a defect modification of the Ca10LiMgSb9 type and to crystallize in the tetragonal P42/mnm space group (No. 136) with four formula units per cell. The structural disorder can be associated with both occupational and positional effects on several Yb and Mn sites. Similar traits were observed for the structure of the recently reported Yb21Mn4Sb18 phase (monoclinic space group C2/c, No. 15), which was reevaluated as part of this study as well. In both structures, distorted Sb6 octahedra centered by Yb atoms and Sb4 tetrahedra centered by Mn atoms form disordered fragments, which appear as the hallmark of the structural chemistry in this system. Discussion along the lines of how difficult, and important, it is to distinguish Yb10MnSb9 from the compositionally similar binary Yb11Sb10 and ternary Yb14MnSb11 compounds is also presented. Preliminary transport measurements for polycrystalline Yb10MnSb9 indicate high values of the Seebeck coefficient, approaching 210 μV K-1 at 600 K, and a semiconducting behavior with a room-temperature resistivity of 114 mΩ cm.
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Affiliation(s)
- Sviatoslav Baranets
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States of America
| | - Alexander Ovchinnikov
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States of America.,Department of Materials and Environmental Chemistry, Stockholm University, Stockholm 10691, Sweden
| | - Svilen Bobev
- Department of Chemistry and Biochemistry, University of Delaware, Newark, Delaware 19716, United States of America
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