Experimental and computational approaches to study the high temperature thermoelectric properties of novel topological semimetal CoSi

Here, we study the thermoelectric properties of topological semimetal CoSi in the temperature range 300-800 K by using combined experimental and density functional theory (DFT) based methods. CoSi is synthesized using arc melting technique and the Rietveld refinement gives the lattice parameters ofa=b=c= 4.445 Å. The measured values of Seebeck coefficient (S) shows the non-monotonic behaviour in the studied temperature range with the value of ∼-81μV K^-1at room temperature. The |S| first increases till 560 K (∼-93μV K^-1) and then decreases up to 800 K (∼-84μV K^-1) indicating the dominating n-type behaviour in the full temperature range. The electrical conductivity,σ(thermal conductivity,κ) shows the monotonic decreasing (increasing) behaviour with the values of∼5.2×105(12.1 W m^-1 K^-1) and∼3.6×105(14.2 W m^-1 K^-1) Ω^-1 m^-1at 300 K and 800 K, respectively. Theκexhibits the temperature dependency as,κ∝T^0.16. The DFT based Boltzmann transport theory is used to understand these behaviour. The multi-band electron and hole pockets appear to be mainly responsible for deciding the temperature dependent transport behaviour. Specifically, the decrease in the |S| above 560 K and change in the slope ofσaround 450 K are due to the contribution of thermally generated charge carriers from the hole pockets. The temperature dependent relaxation time (τ) is computed by comparing the experimentalσwith calculatedσ/τand it shows temperature dependency of 1/T^0.35. Further this value ofτis used to calculate the temperature dependent electronic part of thermal conductivity (κ_e) and it gives a fairly good match with the experiment. Present study suggests that electronic band-structure obtained from DFT provides a reasonably good estimate of the transport coefficients of CoSi in the high temperature region of 300-800 K.

Instrument for simultaneous measurement of Seebeck coefficient and thermal conductivity in the temperature range 300-800 K with Python interfacing

Fabrication and characterization of an instrument for the high-temperature simultaneous measurement of the Seebeck coefficient (S) and thermal conductivity (κ) have been carried out with Python automation. The steady-state-based Fourier's law of thermal conduction is employed for κ measurement. The parallel thermal conductance technique is implemented for heat loss measurement. Introducing a thin heater and insulating heater base minimizes the heat loss and makes it easier to arrive at high temperatures. Measurement of S is carried out using the differential method. The same thermocouples are used to measure the temperature as well as voltage for S measurement. Care of temperature dependent S of the thermocouple has also been taken. Simple design, small size, and lightweight make this instrument more robust. All the components for making a sample holder are easily available in the market and can be replaced as per the user's demand. This instrument can measure samples with various dimensions and shapes in the temperature range 300-800 K. The instrument is validated using different classes of samples, such as nickel, gadolinium, Fe₂VAl, and LaCoO₃. A wide range of S values from ∼-20 to ∼600 μV/K and κ values from ∼1.1 to ∼23.5 W/m K are studied. The measured values of S and κ are in good agreement with the reported data.

Understanding the Seebeck coefficient of LaNiO3compound in the temperature range 300-620 K

Transition metal oxides have been attracted much attention in thermoelectric community from the last few decades. In the present work, we have synthesized LaNiO₃by a simple solution combustion process. To analyse the crystal structure and structural parameters we have used Rietveld refinement method wherein FullProf software is employed. The room temperature x-ray diffraction indicates the rhombohedral structure with space groupR3¯c(No. 167). The refined values of lattice parameters area=b=c= 5.4071 Å. Temperature dependent Seebeck coefficient (S) of this compound has been investigated by using experimental and computational tools. The measurement ofSis conducted in the temperature range 300-620 K. The measured values ofSin the entire temperature range have negative sign that indicates n-type character of the compound. The value ofSis found to be ∼-8μV/K at 300 K and at 620 K this value is ∼-12μV/K. The electronic structure calculation is carried out using DFT +Umethod due to having strong correlation in LaNiO₃. The calculation predicts the metallic ground state of the compound. Temperature dependentSis calculated using BoltzTraP package and compared with experiment. The best matching between experimental and calculated values ofSis observed when self-interaction correction is employed as double counting correction in spin-polarized DFT +U(=1 eV) calculation. Based on the computational results maximum power factors are also calculated for p-type and n-type doping of this compound.