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Yip WH, Fu Q, Wu J, Hippalgaonkar K, Liu Z, Wang X, Boutchich M, Tay BK. Few-layer Bi 2O 2Se: a promising candidate for high-performance near-room-temperature thermoelectric applications. NANOTECHNOLOGY 2024; 35:465401. [PMID: 39151447 DOI: 10.1088/1361-6528/ad7035] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2024] [Accepted: 08/16/2024] [Indexed: 08/19/2024]
Abstract
Advancements in high-temperature thermoelectric (TE) materials have been substantial, yet identifying promising near-room-temperature candidates for efficient power generation from low-grade waste heat or TE cooling applications has become critical but proven exceedingly challenging. Bismuth oxyselenide (Bi2O2Se) emerges as an ideal candidate for near-room-temperature energy harvesting due to its low thermal conductivity, high carrier mobility and remarkable air-stability. In this study, the TE properties of few-layer Bi2O2Se over a wide temperature range (20-380 K) are investigated, where a charge transport mechanism transitioning from polar optical phonon to piezoelectric scattering at 140 K is observed. Moreover, the Seebeck coefficient (S) increases with temperature up to 280 K then stabilizes at∼-200μV K-1through 380 K. Bi2O2Se demonstrates high mobility (450 cm2V-1s-1) within the optimum power factor (PF) window, despite itsT-1.25dependence. The high mobility compensates the minor reduction in carrier densityn2Dhence contributes to maintain a robust electrical conductivity∼3 × 104S m-1. This results in a remarkable PF of 860μW m-1K-2at 280 K without the necessity for gating (Vg= 0 V), reflecting the innate performance of the as-grown material. These results underscore the considerable promise of Bi2O2Se for room temperature TE applications.
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Affiliation(s)
- Weng Hou Yip
- Centre for Micro- and Nano-Electronics (CMNE) School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Qundong Fu
- IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore
- School of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Jing Wu
- Institute of Material Research and Engineering, Agency for Science Technology and Research, Singapore 138634, Singapore
| | - Kedar Hippalgaonkar
- School of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Zheng Liu
- School of Material Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Xingli Wang
- IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore
| | - Mohamed Boutchich
- IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore
- Université Paris-Saclay, CentraleSupélec, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 91192 Gif-sur-Yvette, France
- Sorbonne Université, CNRS, Laboratoire de Génie Electrique et Electronique de Paris, 75252 Paris, France
| | - Beng Kang Tay
- Centre for Micro- and Nano-Electronics (CMNE) School of Electrical and Electronics Engineering, Nanyang Technological University, Singapore 639798, Singapore
- IRL 3288 CINTRA (CNRS-International-NTU-THALES), Nanyang Technological University, Singapore 637553, Singapore
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2
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Tan XY, Dong J, Liu J, Zhang D, Solco SFD, Sağlık K, Jia N, You IJWJ, Chien SW, Wang X, Hu L, Luo Y, Zheng Y, Soo DXY, Ji R, Goh KCH, Jiang Y, Li J, Suwardi A, Zhu Q, Xu J, Yan Q. Synergistic Combination of Sb 2Si 2Te 6 Additives for Enhanced Average ZT and Single-Leg Device Efficiency of Bi 0.4Sb 1.6Te 3-based Composites. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400870. [PMID: 38553790 PMCID: PMC11187870 DOI: 10.1002/advs.202400870] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/21/2024] [Indexed: 06/20/2024]
Abstract
Thermoelectric materials are highly promising for waste heat harvesting. Although thermoelectric materials research has expanded over the years, bismuth telluride-based alloys are still the best for near-room-temperature applications. In this work, a ≈38% enhancement of the average ZT (300-473 K) to 1.21 is achieved by mixing Bi0.4Sb1.6Te3 with an emerging thermoelectric material Sb2Si2Te6, which is significantly higher than that of most BiySb2-yTe3-based composites. This enhancement is facilitated by the unique interface region between the Bi0.4Sb1.6Te3 matrix and Sb2Si2Te6-based precipitates with an orderly atomic arrangement, which promotes the transport of charge carriers with minimal scattering, overcoming a common factor that is limiting ZT enhancement in such composites. At the same time, high-density dislocations in the same region can effectively scatter the phonons, decoupling the electron-phonon transport. This results in a ≈56% enhancement of the thermoelectric quality factor at 373 K, from 0.41 for the pristine sample to 0.64 for the composite sample. A single-leg device is fabricated with a high efficiency of 5.4% at ΔT = 164 K further demonstrating the efficacy of the Sb2Si2Te6 compositing strategy and the importance of the precipitate-matrix interface microstructure in improving the performance of materials for relatively low-temperature applications.
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Affiliation(s)
- Xian Yi Tan
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
| | - Jinfeng Dong
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
| | - Jiawei Liu
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
- Institute of Sustainability for ChemicalsEnergy and Environment (ISCE2)Agency for ScienceTechnology and Research (A*STAR)1 Pesek Road, Jurong IslandSingapore627833Republic of Singapore
| | - Danwei Zhang
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Samantha Faye Duran Solco
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Kıvanç Sağlık
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
| | - Ning Jia
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
- Key Laboratory of Materials for High Power LaserShanghai Institute of Optics and Fine MechanicsChinese Academy of SciencesShanghai201800P. R. China
| | - Ivan Joel Wen Jie You
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- NUS High School of Mathematics and Science20 Clementi Avenue 1Singapore117542Republic of Singapore
| | - Sheau Wei Chien
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Xizu Wang
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Lei Hu
- State Key Laboratory for Mechanical Behavior of MaterialsXi'an Jiaotong UniversityXi'an710049P. R. China
| | - Yubo Luo
- State Key Laboratory of Materials Processing and Die & Mould TechnologySchool of Materials Science and EngineeringHuazhong University of Science and TechnologyWuhan430074P. R. China
| | - Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and DevicesMinistry of EducationJianghan UniversityWuhan430056P. R. China
| | - Debbie Xiang Yun Soo
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Rong Ji
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Ken Choon Hwa Goh
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
| | - Yilin Jiang
- State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing100084China
| | - Jing‐Feng Li
- State Key Laboratory of New Ceramics and Fine ProcessingSchool of Materials Science and EngineeringTsinghua UniversityBeijing100084China
| | - Ady Suwardi
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- Department of Electronic EngineeringThe Chinese University of Hong KongShatin, New TerritoriesHong Kong999077China
| | - Qiang Zhu
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- Institute of Sustainability for ChemicalsEnergy and Environment (ISCE2)Agency for ScienceTechnology and Research (A*STAR)1 Pesek Road, Jurong IslandSingapore627833Republic of Singapore
- School of ChemistryChemical Engineeringand BiotechnologyNanyang Technological University21 Nanyang LinkSingapore637371Republic of Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering (IMRE)Agency for ScienceTechnology and Research (A*STAR)2 Fusionopolis Way, Innovis #08‐03Singapore138634Republic of Singapore
- Institute of Sustainability for ChemicalsEnergy and Environment (ISCE2)Agency for ScienceTechnology and Research (A*STAR)1 Pesek Road, Jurong IslandSingapore627833Republic of Singapore
- Department of ChemistryNational University of Singapore3 Science Drive 3Singapore117543Republic of Singapore
| | - Qingyu Yan
- School of Materials Science and EngineeringNanyang Technological University50 Nanyang Ave, Block N4.1 #01‐30Singapore639798Republic of Singapore
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3
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Yun WS, Yang W, Shim MK, Song S, Choi J, Kim J, Kim J, Moon Y, Jo S, Lim DK, Kim K. Accurately Controlled Tumor Temperature with Silica-Coated Gold Nanorods for Optimal Immune Checkpoint Blockade Therapy. Biomater Res 2024; 28:0024. [PMID: 38694230 PMCID: PMC11062504 DOI: 10.34133/bmr.0024] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Accepted: 03/25/2024] [Indexed: 05/04/2024] Open
Abstract
Photothermal therapy (PTT) at mild temperatures ranging from 44 to 45 °C holds tremendous promise as a strategy for inducing potent immunogenic cell death (ICD) within tumor tissues, which can reverse the immunosuppressive tumor microenvironment (ITM) into an immune-responsive milieu. However, accurately and precisely controlling the tumor temperature remains a formidable challenge. Here, we report the precision photothermal immunotherapy by using silica-coated gold nanorods (AuNR@SiO2), and investigating the optimal administration routes and treatment protocols, which enabled to achieve the sustained and controlled mild heating within the tumor tissues. First, the highest photothermal performance of AuNR@SiO2 with 20-nm silica shell thickness than 5 or 40 nm was confirmed in vitro and in vivo. Then, the optimal conditions for precision immunotherapy were further investigated to produce mild temperature (44 to 45 °C) accurately in tumor tissues. The optimal conditions with AuNR@SiO2 result in a distinct cell death with high early/late apoptosis and low necrosis, leading to very efficient ICD compared to lower or higher temperatures. In colon tumor-bearing mice, intratumorally injected AuNR@SiO2 efficiently promotes a mild temperature within the tumor tissues by local irradiation of near-infrared (NIR) laser. This mild PTT substantially increases the population of mature dendritic cells (DCs) and cytotoxic T cells (CTLs) within tumor tissues, ultimately reversing the ITM into an immune-responsive milieu. Furthermore, we found that the combination mild PTT with AuNR@SiO2 and anti-PD-L1 therapy could lead to the 100% complete regression of primary tumors and immunological memory to prevent tumor recurrence. Collectively, this study demonstrates that AuNR@SiO2 with a robust methodology capable of continuously inducing mild temperature accurately within the ITM holds promise as an approach to achieve the precision photothermal immunotherapy.
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Affiliation(s)
- Wan Su Yun
- College of Pharmacy, Graduate School of Pharmaceutical Sciences,
Ewha Womans University, Seoul 03760, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology,
Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Wonseok Yang
- KU-KIST Graduate School of Converging Science and Technology,
Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Man Kyu Shim
- Medicinal Materials Research Center, Biomedical Research Division,
Korea Institute of Science and Technology (KIST), Seoul02792, Republic of Korea
| | - Sukyung Song
- College of Pharmacy, Graduate School of Pharmaceutical Sciences,
Ewha Womans University, Seoul 03760, Republic of Korea
| | - Jiwoong Choi
- Medicinal Materials Research Center, Biomedical Research Division,
Korea Institute of Science and Technology (KIST), Seoul02792, Republic of Korea
| | - Jeongrae Kim
- College of Pharmacy, Graduate School of Pharmaceutical Sciences,
Ewha Womans University, Seoul 03760, Republic of Korea
- KU-KIST Graduate School of Converging Science and Technology,
Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
| | - Jinseong Kim
- College of Pharmacy, Graduate School of Pharmaceutical Sciences,
Ewha Womans University, Seoul 03760, Republic of Korea
| | - Yujeong Moon
- Medicinal Materials Research Center, Biomedical Research Division,
Korea Institute of Science and Technology (KIST), Seoul02792, Republic of Korea
| | - SeongHoon Jo
- Medicinal Materials Research Center, Biomedical Research Division,
Korea Institute of Science and Technology (KIST), Seoul02792, Republic of Korea
| | - Dong-Kwon Lim
- KU-KIST Graduate School of Converging Science and Technology,
Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- Department of Integrative Energy Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of Korea
- Brain Science Institute, Korea Institute of Science and Technology (KIST), 5, Hwarang-ro 14-gil, Seongbuk-gu, Seoul 02792, Republic of Korea
| | - Kwangmeyung Kim
- College of Pharmacy, Graduate School of Pharmaceutical Sciences,
Ewha Womans University, Seoul 03760, Republic of Korea
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4
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Li H, Nairan A, Niu X, Chen Y, Sun H, Lai L, Qin J, Dang L, Wang G, Khan U, He F. A hidden phase uncovered by ultrafast carrier dynamics in thin Bi 2O 2Se. NANOSCALE 2024; 16:4189-4196. [PMID: 38323830 DOI: 10.1039/d3nr05625b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/08/2024]
Abstract
Bi2O2Se has attracted intensive attention due to its potential in electronics, optoelectronics, and ferroelectric applications. Despite that, there have only been a handful of experimental studies based on ultrafast spectroscopy to elucidate the carrier dynamics in Bi2O2Se thin films. Besides, different groups have reported various ultrafast timescales and associated mechanisms across films of different thicknesses. A comprehensive understanding in relation to thickness and fluence is still lacking. In this work, we have systematically explored the thickness-dependent Raman spectroscopy and ultrafast carrier dynamics in chemical vapor deposition (CVD)-grown Bi2O2Se thin films on a mica substrate with thicknesses varying from 22.44 nm down to 4.62 nm in both low and high pump fluence regions. Combining the thickness dependence and fluence dependence of the slow decay time, we demonstrate a hidden photoinduced ferroelectric transition in the thinner (<8 nm) Bi2O2Se films below the material damage thresholds, influenced by substrate-induced compressive strain and far-from-equilibrium excitation. Moreover, this transition can be manifested at high electronic excitation densities. Our results deepen the understanding of the interplay between the ferroelectric phase and semiconducting characteristics of Bi2O2Se thin films, offering potential applications in optoelectronic devices that benefit from the ferroelectric transition.
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Affiliation(s)
- Hao Li
- State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China.
| | - Adeela Nairan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, P. R. China.
| | - Xiaoran Niu
- State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China.
| | - Yuxiang Chen
- School of Science and Ministry of Industry and Information Technology, Key Laboratory of Micro-Nano Opto-electronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong 518055, P. R. China
| | - Huarui Sun
- School of Science and Ministry of Industry and Information Technology, Key Laboratory of Micro-Nano Opto-electronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong 518055, P. R. China
| | - Linqing Lai
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Jingkai Qin
- Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Leyang Dang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Guigen Wang
- Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
| | - Usman Khan
- Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, P. R. China.
| | - Feng He
- State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China
- Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China.
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5
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Gong Z, Saglik K, Wu J, Suwardi A, Cao J. Suppressing Ag 2Te nanoprecipitates for enhancing thermoelectric efficiency of AgSbTe 2. NANOSCALE 2023; 15:18283-18290. [PMID: 37941461 DOI: 10.1039/d3nr04584f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Thermoelectrics are a class of materials that provide interconversion between heat and electricity, with desirable traits such as low thermal conductivity and low electrical resistivity. AgSbTe2 has emerged as one of the leading materials in recent years due to its ultra-low thermal conductivity. However, one major hindrance in undoped AgSbTe2 is its high electrical resistivity and low Seebeck coefficient due to the presence of Ag2Te nanoprecipitates. In this work, we leverage on the combination of an off-stoichiometric composition and a non-equilibrium process to simultaneously enhance the properties of AgSbTe2 and its thermoelectric device performance. Microscopically, the Ag2Te-deficient starting composition combined with a non-equilibrium thermal process suppresses the Ag2Te nanoprecipitates in the material. In addition, it is evident from the density functional theory (DFT) electronic structure that Ag2Te deficiency results in a smaller lattice and higher density-of-states near the Fermi level, which simultaneously lower the electrical resistivity and increase the Seebeck coefficient. As a result, zT as high as 1.7 was achieved at 573 K. Additionally, when combined with a high room temperature zT of 0.75, a power conversion efficiency of 7.3% was achieved at a ΔT of 290 K. Crucially, the strategy in this work can inspire application in other ABX2 material systems to achieve improved thermoelectric performances.
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Affiliation(s)
- Zichen Gong
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Kivanc Saglik
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore.
- School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore
| | - Jing Wu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Ady Suwardi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore.
- Department of Materials Science and Engineering, National University of Singapore, 117575, Singapore
| | - Jing Cao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 138634, Singapore.
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6
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Chen Z, Huang J, Yang M, Liu X, Zheng Z, Huo N, Han L, Luo D, Li J, Gao W. Bi 2O 2Se Nanowire/MoSe 2 Mixed-Dimensional Polarization-Sensitive Photodiode with a Nanoscale Ultrafast-Response Channel. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37335909 DOI: 10.1021/acsami.3c05283] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/21/2023]
Abstract
In recent years, polarization-sensitive photodiodes based on one-dimensional/two-dimensional (1D/2D) van der Waals (vdWs) heterostructures have garnered significant attention due to the high specific surface area, strong orientation degree of 1D structures, and large photo-active area and mechanical flexibility of 2D structures. Therefore, they are applicable in wearable electronics, electrical-driven lasers, image sensing, optical communication, optical switches, etc. Herein, 1D Bi2O2Se nanowires have been successfully synthesized via chemical vapor deposition. Impressively, the strongest Raman vibration modes can be achieved along the short edge (y-axis) of Bi2O2Se nanowires with high crystalline quality, which originate from Se and Bi vacancies. Moreover, the Bi2O2Se/MoSe2 photodiode designed with type-II band alignment demonstrates a high rectification ratio of 103. Intuitively, the photocurrent peaks are mainly distributed in the overlapped region under the self-powered mode and reverse bias, within the wavelength range of 400-nm. The resulting device exhibits excellent optoelectrical performances, including high responsivities (R) and fast response speed of 656 mA/W and 350/380 μs (zero bias) and 17.17 A/W and 100/110 μs (-1 V) under 635 nm illumination, surpassing the majority of reported mixed-dimensional photodiodes. The most significant feature of our photodiode is its highest photocurrent anisotropic ratio of ∼2.2 (-0.8 V) along the long side (x-axis) of Bi2O2Se nanowires under 635 nm illumination. The above results reveal a robust and distinctive correlation between structural defects and polarized orientation for 1D Bi2O2Se nanowires. Furthermore, 1D Bi2O2Se nanowires appear to be a great potential candidate for high-performance rectifiers, polarization-sensitive photodiodes, and phototransistors based on mixed vdWs heterostructures.
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Affiliation(s)
- Zecheng Chen
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Jianming Huang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Mengmeng Yang
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Xiao Liu
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Zhaoqiang Zheng
- College of Materials and Energy, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Nengjie Huo
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Lixiang Han
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
| | - Dongxiang Luo
- Huangpu Hydrogen Innovation Center/Guangzhou Key Laboratory for Clean Energy and Materials, School of Chemistry and Chemical Engineering, Guangzhou University, Guangzhou 510006, P. R. China
| | - Jingbo Li
- College of Optical Science and Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Wei Gao
- Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Semiconductor Science and Technology, South China Normal University, Guangzhou 528225, P. R. China
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7
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Wang W, Meng Y, Zhang Y, Zhang Z, Wang W, Lai Z, Xie P, Li D, Chen D, Quan Q, Yin D, Liu C, Yang Z, Yip S, Ho JC. Electrically Switchable Polarization in Bi 2 O 2 Se Ferroelectric Semiconductors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210854. [PMID: 36621966 DOI: 10.1002/adma.202210854] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Revised: 01/03/2023] [Indexed: 06/17/2023]
Abstract
Atomically 2D layered ferroelectric semiconductors, in which the polarization switching process occurs within the channel material itself, offer a new material platform that can drive electronic components toward structural simplification and high-density integration. Here, a room-temperature 2D layered ferroelectric semiconductor, bismuth oxychalcogenides (Bi2 O2 Se), is investigated with a thickness down to 7.3 nm (≈12 layers) and piezoelectric coefficient (d33 ) of 4.4 ± 0.1 pm V-1 . The random orientations and electrically dependent polarization of the dipoles in Bi2 O2 Se are separately uncovered owing to the structural symmetry-breaking at room temperature. Specifically, the interplay between ferroelectricity and semiconducting characteristics of Bi2 O2 Se is explored on device-level operation, revealing the hysteresis behavior and memory window (MW) formation. Leveraging the ferroelectric polarization originating from Bi2 O2 Se, the fabricated device exhibits "smart" photoresponse tunability and excellent electronic characteristics, e.g., a high on/off current ratio > 104 and a large MW to the sweeping range of 47% at VGS = ±5 V. These results demonstrate the synergistic combination of ferroelectricity with semiconducting characteristics in Bi2 O2 Se, laying the foundation for integrating sensing, logic, and memory functions into a single material system that can overcome the bottlenecks in von Neumann architecture.
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Affiliation(s)
- Weijun Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - You Meng
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Yuxuan Zhang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Zhuomin Zhang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Wei Wang
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Zhengxun Lai
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Pengshan Xie
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Dengji Li
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Dong Chen
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Quan Quan
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Di Yin
- Department of Materials Science and Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - Chuntai Liu
- Key Laboratory of Advanced Materials Processing & Mold (Zhengzhou University), Ministry of Education, Zhengzhou, 450002, P. R. China
| | - Zhengbao Yang
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
| | - SenPo Yip
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
| | - Johnny C Ho
- Institute for Materials Chemistry and Engineering, Kyushu University, Fukuoka, 816-8580, Japan
- State Key Laboratory of Terahertz and Millimeter Waves, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
- Hong Kong Institute for Advanced Study, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, P. R. China
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8
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Cao J, Sim Y, Tan XY, Zheng J, Chien SW, Jia N, Chen K, Tay YB, Dong JF, Yang L, Ng HK, Liu H, Tan CKI, Xie G, Zhu Q, Li Z, Zhang G, Hu L, Zheng Y, Xu J, Yan Q, Loh XJ, Mathews N, Wu J, Suwardi A. Upcycling Silicon Photovoltaic Waste into Thermoelectrics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2110518. [PMID: 35257424 DOI: 10.1002/adma.202110518] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/25/2021] [Revised: 02/22/2022] [Indexed: 06/14/2023]
Abstract
Two decades after the rapid expansion of photovoltaics, the number of solar panels reaching end-of-life is increasing. While precious metals such as silver and copper are usually recycled, silicon, which makes up the bulk of a solar cells, goes to landfills. This is due to the defect- and impurity-sensitive nature in most silicon-based technologies, rendering it uneconomical to purify waste silicon. Thermoelectrics represents a rare class of material in which defects and impurities can be engineered to enhance the performance. This is because of the majority-carrier nature, making it defect- and impurity-tolerant. Here, the upcycling of silicon from photovoltaic (PV) waste into thermoelectrics is enabled. This is done by doping 1% Ge and 4% P, which results in a figure of merit (zT) of 0.45 at 873 K, the highest among silicon-based thermoelectrics. The work represents an important piece of the puzzle in realizing a circular economy for photovoltaics and electronic waste.
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Affiliation(s)
- Jing Cao
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Ying Sim
- Energy Research Institute, Nanyang Technological University (ERI@N), Research Techno Plaza, X-Frontier Block Level 5, 50 Nanyang Drive, Singapore, 637553, Singapore
- Singapore-CEA Alliance for Research in Circular Economy (SCARCE), School of Chemical and Biomedical Engineering, 62 Nanyang Drive, Singapore, 637459, Singapore
| | - Xian Yi Tan
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jie Zheng
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Sheau Wei Chien
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Ning Jia
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Kewei Chen
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Yeow Boon Tay
- Energy Research Institute, Nanyang Technological University (ERI@N), Research Techno Plaza, X-Frontier Block Level 5, 50 Nanyang Drive, Singapore, 637553, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
- Interdisciplinary Graduate School (IGS), Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jin-Feng Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Le Yang
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Hong Kuan Ng
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Hongfei Liu
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Chee Kiang Ivan Tan
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Guofeng Xie
- School of Materials Science and Engineering, Hunan University of Science and Technology, Xiangtan, 411201, P. R. China
| | - Qiang Zhu
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Zibiao Li
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
- Institute of Sustainability for Chemicals, Energy and Environment (ISCE2), A*STAR, 1 Pesek Road, Jurong Island, Singapore, 627833, Singapore
| | - Gang Zhang
- Institute of High Performance Computing, 1 Fusionopolis Way, Connexis, Singapore, 138632, Singapore
| | - Lei Hu
- Laboratory for Materials and Structures, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama, Kanagawa, 226-8503, Japan
| | - Yun Zheng
- Key Laboratory of Optoelectronic Chemical Materials and Devices, Ministry of Education, Jianghan University, Wuhan, Hubei, 430056, P. R. China
| | - Jianwei Xu
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Xian Jun Loh
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Nripan Mathews
- Energy Research Institute, Nanyang Technological University (ERI@N), Research Techno Plaza, X-Frontier Block Level 5, 50 Nanyang Drive, Singapore, 637553, Singapore
- Singapore-CEA Alliance for Research in Circular Economy (SCARCE), School of Chemical and Biomedical Engineering, 62 Nanyang Drive, Singapore, 637459, Singapore
- School of Materials Science and Engineering, Nanyang Technological University, Singapore, 639798, Singapore
| | - Jing Wu
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
| | - Ady Suwardi
- Agency for Science, Technology and Research, Institute of Materials Research and Engineering, #08-03, 2 Fusionopolis Way, Singapore, 138634, Singapore
- Department of Materials Science and Engineering, National University of Singapore, Singapore, 117575, Singapore
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9
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Liu B, Chang YF, Li J, Liu X, Wang LA, Verma D, Liang H, Zhu H, Zhao Y, Li LJ, Hou TH, Lai CS. Bi 2O 2Se-Based True Random Number Generator for Security Applications. ACS NANO 2022; 16:6847-6857. [PMID: 35333049 PMCID: PMC9048684 DOI: 10.1021/acsnano.2c01784] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/14/2023]
Abstract
The fast development of the Internet of things (IoT) promises to deliver convenience to human life. However, a huge amount of the data is constantly generated, transmitted, processed, and stored, posing significant security challenges. The currently available security protocols and encryption techniques are mostly based on software algorithms and pseudorandom number generators that are vulnerable to attacks. A true random number generator (TRNG) based on devices using stochastically physical phenomena has been proposed for auditory data encryption and trusted communication. In the current study, a Bi2O2Se-based memristive TRNG is demonstrated for security applications. Compared with traditional metal-insulator-metal based memristors, or other two-dimensional material-based memristors, the Bi2O2Se layer as electrode with non-van der Waals interface, high carrier mobility, air stability, extreme low thermal conductivity, as well as vertical surface resistive switching shows intrinsic stochasticity and complexity in a memristive true analogue/digital random number generation. Moreover, those analogue/digital random number generation processes are proved to be resilient for machine learning prediction.
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Affiliation(s)
- Bo Liu
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Ying-Feng Chang
- Artificial
Intelligence Research Center, Chang Gung
University, Guishan District, 33302 Taoyuan, Taiwan
| | - Juzhe Li
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Xu Liu
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Le An Wang
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Dharmendra Verma
- Department
of Electronic Engineering, Chang Gung University, Guishan District, 33302 Taoyuan, Taiwan
| | - Hanyuan Liang
- School
of Electrical Engineering and Computer Science, The Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Hui Zhu
- Faculty
of Information Technology, College of Microelectronics, Beijing University of Technology, Beijing 100124, People’s Republic of China
| | - Yudi Zhao
- School
of Information and Communication Engineering, Beijing Information Science & Technology University, Beijing 100101, China
| | - Lain-Jong Li
- Department
of Mechanical Engineering, The University
of Hong Kong, Pokfulam Road, 999077, Hong Kong
| | - Tuo-Hung Hou
- Department
of Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, 300 Hsinchu, Taiwan
| | - Chao-Sung Lai
- Artificial
Intelligence Research Center, Chang Gung
University, Guishan District, 33302 Taoyuan, Taiwan
- Department
of Electronic Engineering, Chang Gung University, Guishan District, 33302 Taoyuan, Taiwan
- Department
of Nephrology, Chang Gung Memorial Hospital, Guishan District, 33305, Linkou, Taiwan
- Department
of Materials Engineering, Ming Chi University
of Technology, Taishan
District, 24301 New Taipei City, Taiwan
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10
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Liu S, He D, Tan C, Fu S, Han X, Huang M, Miao Q, Zhang X, Wang Y, Peng H, Zhao H. Charge Transfer Properties of Heterostructures Formed by Bi 2 O 2 Se and Transition Metal Dichalcogenide Monolayers. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106078. [PMID: 34862734 DOI: 10.1002/smll.202106078] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/22/2021] [Indexed: 06/13/2023]
Abstract
Atomically thin bismuth oxyselenide (Bi2 O2 Se) exhibits attractive properties for electronic and optoelectronic applications, such as high charge-carrier mobility and good air stability. Recently, the development of Bi2 O2 Se-based heterostructures have attracted enormous interests with promising prospects for diverse device applications. Although the electrical properties of Bi2 O2 Se-based heterostructures have been widely studied, the interlayer charge transfer in these heterostructures remains elusive, despite its importance in harnessing their emergent functionalities. Here, a comprehensive experimental investigation on the interlayer charge transfer properties of two heterostructures formed by Bi2 O2 Se and representative transition metal dichalcogenides (namely, WS2 /Bi2 O2 Se and MoS2 /Bi2 O2 Se) is reported. Kelvin probe force microscopy is used to measure the work functions of the samples, which are further employed to establish type-II band alignment of both heterostructures. Photoluminescence quenching is observed in each heterostructure, suggesting high charge transfer efficiency. Time-resolved and layer-selective pump-probe measurements further prove the ultrafast interlayer charge transfer processes and formation of long-lived interlayer excitons. These results establish the feasibility of integrating 2D Bi2 O2 Se with other 2D semiconductors to fabricate heterostructures with novel charge transfer properties and provide insight for understanding the performance of optoelectronic devices based on such 2D heterostructures.
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Affiliation(s)
- Shuangyan Liu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Dawei He
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Congwei Tan
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Shaohua Fu
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Xiuxiu Han
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Mohan Huang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Qing Miao
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Xiaoxian Zhang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Yongsheng Wang
- Key Laboratory of Luminescence and Optical Information, Ministry of Education, Institute of Optoelectronic Technology, Beijing Jiaotong University, Beijing, 100044, P. R. China
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Hui Zhao
- Department of Physics and Astronomy, The University of Kansas, Lawrence, KS, 66045, USA
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11
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Cao J, Tan XY, Jia N, Lan D, Solco SFD, Chen K, Chien SW, Liu H, Tan CKI, Zhu Q, Xu J, Yan Q, Suwardi A. Improved zT in Nb 5Ge 3-GeTe thermoelectric nanocomposite. NANOSCALE 2022; 14:410-418. [PMID: 34929726 DOI: 10.1039/d1nr06962d] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Robust electronic transport properties is a crucial in designing high performance thermoelectrics. A key similarity between superconductor and thermoelectric lies in their generally high electrical conductivity, even at above its superconducting temperature. In this work, we design a nanocomposite between Nb5Ge3 and GeTe-based thermoelectric to improve its thermoelectric figure of merit zT. Phase and microstructural characterization shows distinct Nb5Ge3 precipitates embed in Ge0.9Sb0.1Te matrix. In addition, experimental electronic and thermal transport analysis, together with density functional theory calculation were employed to show the synergistic effect of doping Sb and Nb5Ge3 nanocomposite approach. 10% Sb doping was found to optimize the electronic properties of the GeTe-based matrix. Further addition of 2 wt% Nb5Ge3 nanocomposite to the matrix enhances the phonon scattering, which consequently lowers the lattice thermal conductivity, which results in zT of up to 2.0 at 723 K. Such superconductor nanocomposite approach shown in this work can be employed to enhance the properties of other thermoelectric materials.
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Affiliation(s)
- Jing Cao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
| | - Xian Yi Tan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
| | - Ning Jia
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
| | - Da Lan
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575
| | - Samantha Faye Duran Solco
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
| | - Kewei Chen
- School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore 639798
| | - Sheau Wei Chien
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
| | - Hongfei Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
| | - Chee Kiang Ivan Tan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
| | - Qiang Zhu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
| | - Jianwei Xu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798
| | - Ady Suwardi
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research, #08-03, 2 Fusionopolis Way, Singapore 138634.
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575
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12
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Zhao Y, Zhang S, Xu B, Zhang S, Han S, Zhang J, Tong L. Monitoring Strain-Controlled Exciton-Phonon Coupling in Layered MoS 2 by Circularly Polarized Light. J Phys Chem Lett 2021; 12:11555-11562. [PMID: 34806884 DOI: 10.1021/acs.jpclett.1c03481] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
The modulation of exciton-phonon coupling by strain greatly affects the optical and optoelectronic properties of two-dimensional (2D) materials. Although photoluminescence and optical absorption spectra have been used to characterize the overall change of exciton-phonon coupling under strain, there has been no effective method to distinguish the evolution of the major contributions of exciton-phonon coupling, that is, deformation potential (DP) and Fröhlich interaction (FI). Here we report the direct monitoring of the evolution of DP and FI under strain in layered MoS2 using circularly polarized Raman spectroscopy. We found that the relative proportions of DP and FI can be well evaluated by the circular polarization ratio of the E2g1 mode for strained MoS2. Further, we demonstrated that the strain control of DP and FI in MoS2 is dominated by the excitonic effect. Our method can be extended to other 2D semiconductors and would be helpful for manipulating exciton-phonon couplings by strain.
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Affiliation(s)
- Yan Zhao
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Shuqing Zhang
- Institute of Information Photonics Technology, Faculty of Science, Beijing University of Technology, Beijing 100124, P. R. China
| | - Bo Xu
- Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, P. R. China
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Shishu Zhang
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Shiyi Han
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Jin Zhang
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
| | - Lianming Tong
- College of Chemistry and Molecular Engineering, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, Peking University, Beijing 100871, P. R. China
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13
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Yang X, Zhang Q, Song Y, Fan Y, He Y, Zhu Z, Bai Z, Luo Q, Wang G, Peng G, Zhu M, Qin S, Novoselov K. High Mobility Two-Dimensional Bismuth Oxyselenide Single Crystals with Large Grain Size Grown by Reverse-Flow Chemical Vapor Deposition. ACS APPLIED MATERIALS & INTERFACES 2021; 13:49153-49162. [PMID: 34632760 DOI: 10.1021/acsami.1c13491] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
2D semiconductors with atomically thin body thickness have attracted tremendous research interest for high-performance nanoelectronics and optoelectronics. Most of the 2D semiconductors grown by chemical vapor deposition (CVD) methods suffer from rather low carrier mobility, small single-crystal size, and instability under ambient conditions. Here, we develop an improved CVD method with controllable reverse-gas flow to realize the direct growth of quality Bi2O2Se 2D single crystals on a mica substrate. The applied reverse flow significantly suppresses the random nucleation and thus promotes the lateral size of 2D Bi2O2Se crystals up to ∼750 μm. The Bi2O2Se field-effect transistors display high-room-temperature electron mobility up to ∼1400 cm2·V-1·s-1 and a well-defined drain current saturation. The on/off ratio of the Bi2O2Se transistor is larger than 107, and the sub-threshold swing is about 90 mV·dec-1. The responsivity, response time, and detectivity of Bi2O2Se photodetectors approach up to 60 A·W-1, 5 ms, and 2.4 × 1010 Jones at room temperature, respectively. Our results demonstrate large-size and high-quality Bi2O2Se grown by reverse-flow CVD as a high-performance channel material for next-generation transistors and photodetectors.
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Affiliation(s)
- Xi Yang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Qi Zhang
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yingchao Song
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yansong Fan
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Yuwen He
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zhihong Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Zongqi Bai
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Qing Luo
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Guang Wang
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Gang Peng
- College of Liberal Arts and Sciences & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Mengjian Zhu
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Shiqiao Qin
- College of Advanced Interdisciplinary Studies & Hunan Provincial Key Laboratory of Novel Nano-Optoelectronic Information Materials and Devices, National University of Defense Technology, Changsha, Hunan 410073, China
| | - Kostya Novoselov
- Department of Materials Science and Engineering, National University of Singapore, Singapore 117575, Singapore
- Chongqing 2D Materials Institute, Liangjiang New Area, Chongqing 400714, China
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14
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Yao J, Yang G. Multielement 2D layered material photodetectors. NANOTECHNOLOGY 2021; 32:392001. [PMID: 34111857 DOI: 10.1088/1361-6528/ac0a16] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/31/2021] [Accepted: 06/10/2021] [Indexed: 06/12/2023]
Abstract
The pronounced quantum confinement effects, outstanding mechanical strength, strong light-matter interactions and reasonably high electric transport properties under atomically thin limit have conjointly established 2D layered materials (2DLMs) as compelling building blocks towards the next generation optoelectronic devices. By virtue of the diverse compositions and crystal structures which bring about abundant physical properties, multielement 2DLMs (ME2DLMs) have become a bran-new research focus of tremendous scientific enthusiasm. Herein, for the first time, this review provides a comprehensive overview on the latest evolution of ME2DLM photodetectors. The crystal structures, synthesis, and physical properties of various experimentally realized ME2DLMs as well as the development in metal-semiconductor-metal photodetectors are comprehensively summarized by dividing them into narrow-bandgap ME2DLMs (including Bi2O2X (X = S, Se, Te), EuMTe3(M = Bi, Sb), Nb2XTe4(X = Si, Ge), Ta2NiX5(X = S, Se), M2PdX6(M = Ta, Nb; X = S, Se), PbSnS2), moderate-bandgap ME2DLMs (including CuIn7Se11, CuTaS3, GaGeTe, TlMX2(M = Ga, In; X = S, Se)), wide-bandgap ME2DLMs (including BiOX (X = F, Cl, Br, I), MPX3(M = Fe, Ni, Mn, Cd, Zn; X = S, Se), ABP2X6(A = Cu, Ag; B = In, Bi; X = S, Se), Ga2In4S9), as well as topological ME2DLMs (MIrTe4(M = Ta, Nb)). In the last section, the ongoing challenges standing in the way of further development are underscored and the potential strategies settling them are proposed, which is aimed at navigating the future advancement of this fascinating domain.
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Affiliation(s)
- Jiandong Yao
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
| | - Guowei Yang
- State Key Laboratory of Optoelectronic Materials and Technologies, Nanotechnology Research Center, School of Materials Science & Engineering, Sun Yat-sen University, Guangzhou, 510275, Guangdong, People's Republic of China
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15
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Zhu Q, Wang S, Wang X, Suwardi A, Chua MH, Soo XYD, Xu J. Bottom-Up Engineering Strategies for High-Performance Thermoelectric Materials. NANO-MICRO LETTERS 2021; 13:119. [PMID: 34138379 PMCID: PMC8093352 DOI: 10.1007/s40820-021-00637-z] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/23/2020] [Accepted: 01/22/2021] [Indexed: 05/02/2023]
Abstract
The recent advancements in thermoelectric materials are largely credited to two factors, namely established physical theories and advanced materials engineering methods. The developments in the physical theories have come a long way from the "phonon glass electron crystal" paradigm to the more recent band convergence and nanostructuring, which consequently results in drastic improvement in the thermoelectric figure of merit value. On the other hand, the progresses in materials fabrication methods and processing technologies have enabled the discovery of new physical mechanisms, hence further facilitating the emergence of high-performance thermoelectric materials. In recent years, many comprehensive review articles are focused on various aspects of thermoelectrics ranging from thermoelectric materials, physical mechanisms and materials process techniques in particular with emphasis on solid state reactions. While bottom-up approaches to obtain thermoelectric materials have widely been employed in thermoelectrics, comprehensive reviews on summarizing such methods are still rare. In this review, we will outline a variety of bottom-up strategies for preparing high-performance thermoelectric materials. In addition, state-of-art, challenges and future opportunities in this domain will be commented.
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Affiliation(s)
- Qiang Zhu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Suxi Wang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Xizu Wang
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Ady Suwardi
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Ming Hui Chua
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Xiang Yun Debbie Soo
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore
| | - Jianwei Xu
- Institute of Materials Research and Engineering, A*STAR (Agency for Science, Technology and Research), 2 Fusionopolis Way, Innovis, #08-03, Singapore, 138634, Singapore.
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore.
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