Stacking-Engineered Heterostructures in Transition Metal Dichalcogenides

Growth of Single Crystalline 2D Materials beyond Graphene on Non-metallic Substrates

The advent of 2D materials has ushered in the exploration of their synthesis, characterization and application. While plenty of 2D materials have been synthesized on various metallic substrates, interfacial interaction significantly affects their intrinsic electronic properties. Additionally, the complex transfer process presents further challenges. In this context, experimental efforts are devoted to the direct growth on technologically important semiconductor/insulator substrates. This review aims to uncover the effects of substrate on the growth of 2D materials. The focus is on non-metallic substrate used for epitaxial growth and how this highlights the necessity for phase engineering and advanced characterization at atomic scale. Special attention is paid to monoelemental 2D structures with topological properties. The conclusion is drawn through a discussion of the requirements for integrating 2D materials with current semiconductor-based technology and the unique properties of heterostructures based on 2D materials. Overall, this review describes how 2D materials can be fabricated directly on non-metallic substrates and the exploration of growth mechanism at atomic scale.

DFT-Assisted Investigation of the Electric Field and Charge Density Distribution of Pristine and Defective 2D WSe2 by Differential Phase Contrast Imaging

Most properties of solid materials are defined by their internal electric field and charge density distributions which so far are difficult to measure with high spatial resolution. Especially for 2D materials, the atomic electric fields influence the optoelectronic properties. In this study, the atomic-scale electric field and charge density distribution of WSe2 bi- and trilayers are revealed using an emerging microscopy technique, differential phase contrast (DPC) imaging in scanning transmission electron microscopy (STEM). For pristine material, a higher positive charge density located at the selenium atomic columns compared to the tungsten atomic columns is obtained and tentatively explained by a coherent scattering effect. Furthermore, the change in the electric field distribution induced by a missing selenium atomic column is investigated. A characteristic electric field distribution in the vicinity of the defect with locally reduced magnitudes compared to the pristine lattice is observed. This effect is accompanied by a considerable inward relaxation of the surrounding lattice, which according to first principles DFT calculation is fully compatible with a missing column of Se atoms. This shows that DPC imaging, as an electric field sensitive technique, provides additional and remarkable information to the otherwise only structural analysis obtained with conventional STEM imaging.

When Machine Learning Meets 2D Materials: A Review

The availability of an ever-expanding portfolio of 2D materials with rich internal degrees of freedom (spin, excitonic, valley, sublattice, and layer pseudospin) together with the unique ability to tailor heterostructures made layer by layer in a precisely chosen stacking sequence and relative crystallographic alignments, offers an unprecedented platform for realizing materials by design. However, the breadth of multi-dimensional parameter space and massive data sets involved is emblematic of complex, resource-intensive experimentation, which not only challenges the current state of the art but also renders exhaustive sampling untenable. To this end, machine learning, a very powerful data-driven approach and subset of artificial intelligence, is a potential game-changer, enabling a cheaper - yet more efficient - alternative to traditional computational strategies. It is also a new paradigm for autonomous experimentation for accelerated discovery and machine-assisted design of functional 2D materials and heterostructures. Here, the study reviews the recent progress and challenges of such endeavors, and highlight various emerging opportunities in this frontier research area.

Effects of strain and thickness on the mechanical, electronic, and optical properties of Cu2Te

Two-dimensional transition-metal chalcogenides (TMCs) have attracted considerable attention because of their exceptional photoelectric properties, finding applications in diverse fields such as photovoltaics, lithium-ion batteries, catalysis, and energy conversion and storage. Recently, experimentally fabricated monolayers of semiconducting Cu2Te have emerged as intriguing materials with outstanding thermal and photoelectric characteristics. In this study, we employ first-principles calculations to investigate the mechanical, electronic, and optical properties of monolayer Cu2Te exhibiting both λ and ζ structures, considering the effects of thickness and strain. The calculations reveal the robust mechanical stability of λ-Cu2Te and ζ-Cu2Te under varying thickness and strain conditions. By applying -5% to +5% strain, the band gaps can be modulated, with ζ-Cu2Te exhibiting an indirect-to-direct transition at a biaxial strain of +5%. In addition, a semiconductor-to-metal transition is observed for both ζ-Cu2Te and λ-Cu2Te with increasing thickness. The absorption spectra of λ-Cu2Te and ζ-Cu2Te exhibit a redshift with an increase in the number of layers. These computational insights into Cu2Te provide valuable information for potential applications in nano-electromechanical systems, optoelectronics, and photocatalytic devices and may guide subsequent experimental research efforts.

Tunable Electronic Properties, Carrier Mobility, and Contact Characteristics in Type-II BSe/Sc2CF2 Heterostructures toward Next-Generation Optoelectronic Devices

Conducting heterostructures have emerged as a promising strategy to enhance physical properties and unlock the potential application of such materials. Herein, we conduct and investigate the electronic and transport properties of the BSe/Sc2CF2 heterostructure using first-principles calculations. The BSe/Sc2CF2 heterostructure is structurally and thermodynamically stable, indicating that it can be feasible for further experiments. The BSe/Sc2CF2 heterostructure exhibits a semiconducting behavior with an indirect band gap and possesses type-II band alignment. This unique alignment promotes efficient charge separation, making it highly promising for device applications, including solar cells and photodetectors. Furthermore, type-II band alignment in the BSe/Sc2CF2 heterostructure leads to a reduced band gap compared to the individual BSe and Sc2CF2 monolayers, leading to enhanced charge carrier mobility and light absorption. Additionally, the generation of the BSe/Sc2CF2 heterostructure enhances the transport properties of the BSe and Sc2CF2 monolayers. The electric fields and strains can modify the electronic properties, thus expanding the potential application possibilities. Both the electric fields and strains can tune the band gap and lead to the type-II to type-I conversion in the BSe/Sc2CF2 heterostructure. These findings shed light on the versatile nature of the BSe/Sc2CF2 heterostructure and its potential for advanced nanoelectronic and optoelectronic devices.

Electronic and magnetic properties of layered M3Si2Te6(M = alkaline earth and transition metals)

Recently, a new layered material, Mn3Si2Te6, was identified to be a semiconductor with nodal-line topological property and ferrimagnetic ground state. In this work, we propose a series of structures, M3Si2Te6(M = alkaline earth and transition metals), and systematically investigate their mechanical, magnetic and electronic properties, and the strain effect to enrich the family of the layered materials for practical applications. We find 13 stable M3Si2Te6, including 5 semiconductors (M = Ca, Sr, Fe, Ru and Os) and 8 metals (M = Sc, Ti, Nb, Ta, Cr, Mo, W and Tc). Two structures (M = Ti and Cr) are antiferromagnetic (AFM), while other structures are non-magnetic (NM). Similar to Mn3Si2Te6, the AFM structures exhibit magnetic anisotropy energies (MAEs) and semiconductors have anisotropic electron effective masses. We further show that compressions along thez-axis can effectively tune the electronic and magnetic properties, such as the semiconductor-metal and NM-AFM transition in Fe3Si2Te6, the two-fold degeneracy of the valence band maximums in Sr3Si2Te6, as well as the reduced MAE for all magnetic structures. These results demonstrate the diverse properties of the layered M3Si2Te6family and provide promising theoretical predictions for the future design of new layered materials.

Material- and shape-dependent optical modes of hyperbolic spheroidal nano-resonators

Hyperbolic nanoresonators, composed of anisotropic materials with opposite signs of permittivity, have unique optical properties due to a large degree of freedom that hyperbolic dispersion provides in designing their response. Here, we focus on uniaxial hyperbolic nanoresonators composed of a model silver-silica multilayer in the form of spheroids with a broad aspect ratio encompassing both prolate and oblate particles. The origin and evolution of the optical response and mode coupling are investigated using both numerical (T-matrix and FDTD) and theoretical methods. We show the tunability of the optical resonances and the interplay of the shape and material anisotropy in determining the spectral response. Depending on the illumination conditions as well as shape and material anisotropy, a single hyperbolic spheroid can show a dominant electric resonance, behaving as a pure metallic nanoparticle, or a strong dipolar magnetic resonance even in the quasistatic regime. The quasistatic magnetic response of indicates a material-dependent origin of the mode, which is obtained due to coupling of the magnetic and electric multipoles. Such coupling characteristics can be employed in various modern applications based on metasurfaces.

Valley-Polarized Interlayer Excitons in 2D Chalcogenide-Halide Perovskite-van der Waals Heterostructures

Interlayer excitons (IXs) in two-dimensional (2D) heterostructures provide an exciting avenue for exploring optoelectronic and valleytronic phenomena. Presently, valleytronic research is limited to transition metal dichalcogenide (TMD) based 2D heterostructure samples, which require strict lattice (mis) match and interlayer twist angle requirements. Here, we explore a 2D heterostructure system with experimental observation of spin-valley layer coupling to realize helicity-resolved IXs, without the requirement of a specific geometric arrangement, i.e., twist angle or specific thermal annealing treatment of the samples in 2D Ruddlesden-Popper (2DRP) halide perovskite/2D TMD heterostructures. Using first-principle calculations, time-resolved and circularly polarized luminescence measurements, we demonstrate that Rashba spin-splitting in 2D perovskites and strongly coupled spin-valley physics in monolayer TMDs render spin-valley-dependent optical selection rules to the IXs. Consequently, a robust valley polarization of ∼14% with a long exciton lifetime of ∼22 ns is obtained in type-II band aligned 2DRP/TMD heterostructure at ∼1.54 eV measured at 80 K. Our work expands the scope for studying spin-valley physics in heterostructures of disparate classes of 2D semiconductors.

High throughput calculations for a dataset of bilayer materials

Bilayer materials made of 2D monolayers are emerging as new systems creating diverse opportunities for basic research and applications in optoelectronics, thermoelectrics, and topological science among others. Herein, we present a computational bilayer materials dataset containing 760 structures with their structural, electronic, and transport properties. Different stacking patterns of each bilayer have been framed by analyzing their monolayer symmetries. Density functional theory calculations including van der Waals interactions are carried out for each stacking pattern to evaluate the corresponding ground states, which are correctly identified for experimentally synthesized transition metal dichalcogenides, graphene, boron nitride, and silicene. Binding energies and interlayer charge transfer are evaluated to analyze the interlayer coupling strength. Our dataset can be used for materials screening and data-assisted modeling for desired thermoelectric or optoelectronic applications.

A Mixed Protonic-Electronic Conductor Base on the Host-Guest Architecture of 2D Metal-Organic Layers and Inorganic Layers

The key to designing and fabricating highly efficient mixed protonic-electronic conductors materials (MPECs) is to integrate the mixed conductive active sites into a single structure, to break through the shortcomings of traditional physical blending. Herein, based on the host-guest interaction, an MPEC is consisted of 2D metal-organic layers and hydrogen-bonded inorganic layers by the assembly methods of layered intercalation. Noticeably, the 2D intercalated materials (≈1.3 nm) exhibit the proton conductivity and electron conductivity, which are 2.02 × 10^-5 and 3.84 × 10^-4 S cm^-1 at 100 °C and 99% relative humidity, much higher than these of pure 2D metal-organic layers (>>1.0 × 10^-10 and 2.01×10^-8 S cm^-1 ), respectively. Furthermore, combining accurate structural information and theoretical calculations reveals that the inserted hydrogen-bonded inorganic layers provide the proton source and a networks of hydrogen-bonds leading to efficient proton transport, meanwhile reducing the bandgap of hybrid architecture and increasing the band electron delocalization of the metal-organic layer to greatly elevate the electron transport of intrinsic 2D metal-organic frameworks.

Synthesis of Two-Dimensional MoO2 Nanoplates with Large Linear Magnetoresistance and Nonlinear Hall Effect

Two-dimensional (2D) materials with large linear magnetoresistance (LMR) are very interesting owing to their potential application in magnetic storage or sensor devices. Here, we report the synthesis of 2D MoO₂ nanoplates grown by a chemical vapor deposition (CVD) method and observe large LMR and nonlinear Hall behavior in MoO₂ nanoplates. As-obtained MoO₂ nanoplates exhibit rhombic shapes and high crystallinity. Electrical studies indicate that MoO₂ nanoplates feature a metallic nature with an excellent conductivity of up to 3.7 × 10⁷ S m^-1 at 2.5 K. MoO₂ nanoplates display a large LMR of up to 455% at 3 K and -9 T. A thickness-dependent LMR analysis suggests that LMR values increase upon increasing the thickness of nanoplates. Besides, nonlinearity has been found in the magnetic-field-dependent Hall resistance, which decreases with increasing temperatures. Our studies highlight that MoO₂ nanoplates are promising materials for fundamental studies and potential applications in magnetic storage devices.

Low-dimensional transition metal sulfide-based electrocatalysts for water electrolysis: overview and perspectives

Hydrogen prepared by electrocatalytic decomposition of water ("green hydrogen") has the advantages of high energy density and being clean and pollution-free, which is an important energy carrier to face the problems of the energy crisis and environmental pollution. However, the most used commercial electrocatalysts are based on expensive and scarce precious metals and their alloy materials, which seriously restricts the large-scale industrial application of hydrogen energy. The development of efficient non-precious metal electrocatalysts is the key to achieving the sustainable development of the hydrogen energy industry. Transition metal sulfides (TMS) have become popular non-precious metal electrocatalysts with great application potential due to their large specific surface area, unique electronic structure, and rich regulatory strategies. To further improve their catalytic activities for practical application, many methods have been tried in recent years, including control of morphology and crystal plane, metal/nonmetal doping, vacancy engineering, building of self-supporting electrocatalysts, interface engineering, etc. In this review, we introduce firstly the common types of TMS and their preparation. Additionally, we summarize the recent developments of the many different strategies mentioned above for efficient water electrolysis applications. Furthermore, the rationales behind their enhanced electrochemical performances are discussed. Lastly, the challenges and future perspectives are briefly discussed for TMS-based water dissociation catalysts.

Engineering tumor-specific catalytic nanosystem for NIR-II photothermal-augmented and synergistic starvation/chemodynamic nanotherapy

Background

As an emerging therapeutic modality, chemodynamic therapy (CDT), converting hydrogen peroxide (H2O2) into highly toxic reactive oxygen species (ROS), has been developed for tumor-specific therapy. However, the deficiency of endogenous H2O2 and high concentration of glutathione (GSH) in the tumor microenvironment (TME) weaken the CDT-based tumor-therapeutic efficacy. Herein, a photothermal-enhanced tumor-specific cascade catalytic nanosystem has been constructed on the basis of glucose oxidase (GOD)-functionalized molybdenum (Mo)-based polyoxometalate (POM) nanoclusters, termed as GOD@POMs.

Methods

GOD@POMs were synthesized by a facile one-pot procedure and covalently conjugation. Then, its structure was characterized by scanning electron microscope (SEM), transmission electron microscope (TEM), Fourier transform infrared (FTIR) spectroscopy and X-ray photoelectron spectroscopy (XPS). In addition, ultraviolet-visible-near-infrared (UV-vis-NIR) absorption spectrum and infrared thermal camera were applied to evaluate the catalytic and photothermal performance, respectively. Moreover, to confirm the therapeutic effects in vitro, cell counting kit-8 (CCK-8) assay, live/dead staining and ROS staining were performed. Furthermore, the biosafety of GOD@POMs was investigated via blood routine, blood biochemistry and hematoxylin and eosin (H&E) staining in Kunming mice. Besides, the C6 glioma tumor-bearing mice were constructed to evaluate its anti-tumor effects in vivo and its photoacoustic (PA) imaging capability. Notably, RNA sequencing, H&E, TdT-mediated dUTP nick end labeling (TUNEL) and Ki-67 staining were also conducted to disclose its underlying anti-tumor mechanism.

Results

In this multifunctional nanosystem, GOD can effectively catalyze the oxidation of intratumoral glucose into gluconic acid and H2O2, achieving the cancer starvation therapy. Meanwhile, the generated gluconic acid decreases the pH in TME resulting in POM aggregation, which enables PA imaging-guided tumor-specific photothermal therapy (PTT), especially in the second near-infrared (NIR-II) biological window. Importantly, the Mo (VI) sites on POM can be reduced to Mo (V) active sites in accompany with GSH depletion, and then the post-produced Mo (V) transforms in situ overproduced H2O2 into singlet oxygen (1O2) via Russell mechanism, achieving self-enhanced CDT. Moreover, the PTT-triggered local tumor temperature elevation augments the synergistic nanocatalytic-therapeutic efficacy.

Conclusions

Consequently, the integration of GOD-induced starvation therapy, H2O2 self-supply/GSH-depletion enhanced Mo-based CDT, and POM aggregation-mediated PTT endow the GOD@POMs with remarkable synergistic anticancer outcomes with neglectable adverse effects.

Engineering of Defect-Rich Cu2WS4 Nano-homojunctions Anchored on Covalent Organic Frameworks for Enhanced Gaseous Elemental Mercury Removal

Fabricating two-dimensional transition-metal dichalcogenide (TMD)-based unique composites is an effective way to boost the overall physical and chemical properties, which will be helpful for the efficient and fast capture of elemental mercury (Hg⁰) over a wide temperature range. Herein, we constructed a defect-rich Cu₂WS₄ nano-homojunction decorated on covalent organic frameworks (COFs) with abundant S vacancies. Highly well-dispersed and uniform Cu₂WS₄ nanoparticles were immobilized on COFs strongly via an ion pre-anchored strategy, consequently exhibiting enhanced Hg⁰ removal performance. The saturation adsorption capacity of Cu₂WS₄@COF composites (21.60 mg·g^-1) was 9 times larger than that of Cu₂WS₄ crystals, which may be ascribed to more active S sites exposed in hybrid interfaces formed in the Cu₂WS₄ nano-homojunction and between Cu₂WS₄ nanoparticles and COFs. More importantly, such hybrid materials reduced adsorption deactivation at high temperatures, having a wide operating temperature range (from 40 to 200 °C) owing to the thermostability of active S species immobilized by both physical confined and chemical interactions in COFs. Accordingly, this work not only provides an effective method to construct uniform TMD-based sorbents for mercury capture but also opens a new realm of advanced COF hybrid materials with designed functionalities.

Ferroelectrics-Integrated Two-Dimensional Devices toward Next-Generation Electronics

Ferroelectric materials play an important role in a wide spectrum of semiconductor technologies and device applications. Two-dimensional (2D) van der Waals (vdW) ferroelectrics with surface-insensitive ferroelectricity that is significantly different from their traditional bulk counterparts have further inspired intensive interest. Integration of ferroelectrics into 2D-layered-material-based devices is expected to offer intriguing working principles and add desired functionalities for next-generation electronics. Herein, fundamental properties of ferroelectric materials that are compatible with 2D devices are introduced, followed by a critical review of recent advances on the integration of ferroelectrics into 2D devices. Representative device architectures and corresponding working mechanisms are discussed, such as ferroelectrics/2D semiconductor heterostructures, 2D ferroelectric tunnel junctions, and 2D ferroelectric diodes. By leveraging the favorable properties of ferroelectrics, a variety of functional 2D devices including ferroelectric-gated negative capacitance field-effect transistors, programmable devices, nonvolatile memories, and neuromorphic devices are highlighted, where the application of 2D vdW ferroelectrics is particularly emphasized. This review provides a comprehensive understanding of ferroelectrics-integrated 2D devices and discusses the challenges of applying them into commercial electronic circuits.

Laser-Triggered Bottom-Up Transcription of Chemical Information: Toward Patterned Graphene/MoS2 Heterostructures

Efficiently assembling heterostructures with desired interface properties, stability, and facile patternability is challenging yet crucial to modern device fabrication. Here, we demonstrate an interface coupling concept to bottom-up construct covalently linked graphene/MoS₂ heterostructures in a spatially defined manner. The covalent heterostructure domains are selectively created in analogy to the traditional printmaking technique, enabling graphic patterns at the bottom MoS₂ layer to be precisely transferred to the top graphene layer. This bottom-up connection and transcription of chemical information is achieved simply via laser beam irradiation. Our approach opens up a new paradigm for heterostructure construction and integration. It enables the efficient generation and real-time visualization of spatially well-resolved covalent graphene/MoS₂ heterostructures, facilitating further design and integration of patterned heterostructures into new generations of high-performance devices.

Synthesis of transition metal dichalcogenide van der Waals heterostructures through chemical vapor deposition

Transition metal dichalcogenide (TMD) van der Waals (vdW) heterostructures show great potential in the exploration of novel physical phenomena and practical applications. Compared to the traditional mechanical stacking techniques, chemical vapor deposition (CVD) method exhibits more advantages in preparing TMD vdW heterostructures. CVD enables the large-scale production of high-quality materials with clean interfaces in the future. Herein, CVD methods for the synthesis of TMD vdW heterostructures are summarized. These methods are categorized in two major strategies, multi-step process and one-step process. The effects of various factors are demonstrated, including the temperature, nucleation, and precursors. Finally, the remaining challenges are discussed.

Observation of Strong Interlayer Couplings in WS2/MoS2 Heterostructures via Low-Frequency Raman Spectroscopy

Van der Waals (vdW) heterostructures based on two-dimensional (2D) transition metal dichalcogenides (TMDCs), particularly WS₂/MoS₂ heterostructures with type-II band alignments, are considered as ideal candidates for future functional optoelectronic applications owing to their efficient exciton dissociation and fast charge transfers. These physical properties of vdW heterostructures are mainly influenced by the interlayer coupling occurring at the interface. However, a comprehensive understanding of the interlayer coupling in vdW heterostructures is still lacking. Here, we present a detailed analysis of the low-frequency (LF) Raman modes, which are sensitive to interlayer coupling, in bilayers of MoS₂, WS₂, and WS₂/MoS₂ heterostructures directly grown using chemical vapor deposition to avoid undesirable interfacial contamination and stacking mismatch effects between the monolayers. We clearly observe two distinguishable LF Raman modes, the interlayer in-plane shear and out-of-plane layer-breathing modes, which are dependent on the twisting angles and interface quality between the monolayers, in all the 2D bilayered structures, including the vdW heterostructure. In contrast, LF modes are not observed in the MoS₂ and WS₂ monolayers. These results indicate that our directly grown 2D bilayered TMDCs with a favorable stacking configuration and high-quality interface can induce strong interlayer couplings, leading to LF Raman modes.

Coupling of N-Doped Mesoporous Carbon and N-Ti3 C2 in 2D Sandwiched Heterostructure for Enhanced Oxygen Electroreduction

2D heterostructures provide a competitive platform to tailor electrical property through control of layer structure and constituents. However, despite the diverse integration of 2D materials and their application flexibility, tailoring synergistic interlayer interactions between 2D materials that form electronically coupled heterostructures remains a grand challenge. Here, the rational design and optimized synthesis of electronically coupled N-doped mesoporous defective carbon and nitrogen modified titanium carbide (Ti₃ C₂ ) in a 2D sandwiched heterostructure, is reported. First, a F127-polydopamine single-micelle-directed interfacial assembly strategy guarantees the construction of two surrounding mesoporous N-doped carbon monolayers assembled on both sides of Ti₃ C₂ nanosheets. Second, the followed ammonia post-treatment successfully introduces N elements into Ti₃ C₂ structure and more defective sites in N-doped mesoporous carbon. Finally, the oxygen reduction reaction (ORR) and theoretical calculation prove the synergistic coupled electronic effect between N-Ti₃ C₂ and defective N-doped carbon active sites in the 2D sandwiched heterostructure. Compared with the control 2D samples (0.87-0.88 V, 4.90-5.15 mA cm^-2 ), the coupled 2D heterostructure possesses the best onset potential of 0.90 V and limited density current of 5.50 mA cm^-2 . Meanwhile, this catalyst exhibits superior methanol tolerance and cyclic durability. This design philosophy opens up a new thought for tailoring synergistic interlayer interactions between 2D materials.

2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges

2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.

V. P. L, N. M, Nayak PK. Twist-Dependent Tuning of Excitonic Emissions in Bilayer WSe2

Monolayer (ML) transition metal dichalcogenides (TMDCs) have been rigorously studied to comprehend their rich spin and valley physics, exceptional optical properties, and ability to open new avenues in fundamental research and technology. However, intricate analysis of twisted homobilayer (t-BL) systems is highly required due to the intriguing twist angle (t-angle)-dependent interlayer effects on optical and electrical properties. Here, we report the evolution of the interlayer effect on artificially stacked BL WSe₂, grown using chemical vapor deposition (CVD), with t-angle in the range of 0 ≤ θ ≤ 60°. Systematic analyses based on Raman and photoluminescence (PL) spectroscopies suggest intriguing deviations in the interlayer interactions, higher-energy exciton transitions (in the range of ∼1.6-1.7 eV), and stacking. In contrast to previous observations, we demonstrate a red shift in the PL spectra with t-angle. Density functional theory (DFT) is employed to understand the band-gap variations with t-angle. Exciton radiative lifetime has been estimated theoretically using temperature-dependent PL measurements, which shows an increase with t-angle that agrees with our experimental observations. This study presents the groundwork for further investigation of the evolution of various interlayer excitons and their dynamics with t-angle in homobilayer systems, critical for optoelectronic applications.

Interlayer Coupling Dependent Discrete H → T' Phase Transition in Lithium Intercalated Bilayer Molybdenum Disulfide

In this work, the interlayer coupling dependent lithium intercalation induced phase transition in bilayer MoS₂ (BL-MoS₂) was investigated using an atomic-resolution annual dark-field scanning transmission electron microscope (ADF-STEM). It was revealed that the lithiation induced H → T' phase transition in BL-MoS₂ strongly depended on the interlayer twist angle; i.e., the H → T' phase transition occurred in well-stacked H phase BL-MoS₂ (with a twist angle of θ_t = 0°) but not for θ_t ≠ 0° BL-MoS₂. The lithiated BL-MoS₂ appeared in homophase stacking, either T'/T' or H/H (locally, no phase transformation) stacking, without any heterophase stacking such as H/T' or T'/H observed. This finding indicated the H → T' phase transition occurred via a domain-by-domain mode rather than layer-by-layer. Up to 15 types of stacking orders were experimentally identified locally in lithiated bilayer T'-MoS₂, and the formation mechanism was attributed to the discrete interlayer translation with a unit step of (m/6a, n/6b) (m, n = 0, 1, 2, 3), where a and b were the primitive lattice vectors of T'-MoS₂. Our experimental results were further corroborated by ab initio density functional theory (DFT) calculations, where the occurrence of different stacking orders can be quantitatively correlated with the variation of intercalated lithium contents into the BL-MoS₂. The present study aids in the understanding of the phase transition mechanisms in atomically thin 2D transition metal dichalcogenides (TMDCs) and will also shed light on the precisely controlled phase engineering of 2D materials for memory applications.

Strain-controlled electronic and magnetic properties of tVS2/hVS2 van der Waals heterostructures

The structural, electronic and magnetic properties of the T-phase and H-phase of the VS₂ monolayer and their heterobilayers are studied by means of first-principles calculations. We find that the two phases of the VS₂ monolayer are both ferromagnetic (FM) semiconductors and that these two monolayers form a typical van der Waals (vdW) heterostructure with a weak interlayer interaction. By comparing the energy of different magnetic configurations, the FM state of the tVS₂/hVS₂ heterostructure is found to be in the ground state under normal conditions or biaxial strains. Under compressive strains, the anti-FM (AFM) and FM states degenerate. Based on the band structure obtained and the work function, it is found that the T-phase and H-phase are capable of forming an efficient p-n heterostructure. Due to spontaneous charge transfer at the interface, a gapless semiconductor is formed in our HSE06 calculations. We also find that the twist angle between the monolayers has a negligible impact on the band structure of the heterostructure in its spin-down channel. Moreover, the tVS₂/hVS₂ heterostructure is found to switch from a gapless semiconductor to a metal or a half-metal under some given biaxial or uniaxial strains. Therefore, the heterostructure could be a half-metallic property with strains, realizing 100% polarization at the Fermi level. Our study provides the possibility of realizing 100% spin-polarization at the Fermi level in these FM vdW heterostructures, which is significant for further spin transport exploration.