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Wang Y, Nie S, Liu S, Hu Y, Fu J, Ming J, Liu J, Li Y, He X, Wang L, Li W, Yi M, Ling H, Xie L, Huang W. Dual-Adaptive Heterojunction Synaptic Transistors for Efficient Machine Vision in Harsh Lighting Conditions. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2404160. [PMID: 38815276 DOI: 10.1002/adma.202404160] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/21/2024] [Revised: 05/22/2024] [Indexed: 06/01/2024]
Abstract
Photoadaptive synaptic devices enable in-sensor processing of complex illumination scenes, while second-order adaptive synaptic plasticity improves learning efficiency by modifying the learning rate in a given environment. The integration of above adaptations in one phototransistor device will provide opportunities for developing high-efficient machine vision system. Here, a dually adaptable organic heterojunction transistor as a working unit in the system, which facilitates precise contrast enhancement and improves convergence rate under harsh lighting conditions, is reported. The photoadaptive threshold sliding originates from the bidirectional photoconductivity caused by the light intensity-dependent photogating effect. Metaplasticity is successfully implemented owing to the combination of ambipolar behavior and charge trapping effect. By utilizing the transistor array in a machine vision system, the details and edges can be highlighted in the 0.4% low-contrast images, and a high recognition accuracy of 93.8% with a significantly promoted convergence rate by about 5 times are also achieved. These results open a strategy to fully implement metaplasticity in optoelectronic devices and suggest their vision processing applications in complex lighting scenes.
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Affiliation(s)
- Yiru Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shimiao Nie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Shanshuo Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yunfei Hu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jingwei Fu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jianyu Ming
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Jing Liu
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Yueqing Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Xiang He
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Le Wang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wen Li
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Mingdong Yi
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Haifeng Ling
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Linghai Xie
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
| | - Wei Huang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications (NJUPT), Nanjing, 210023, China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, China
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2
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Li P, Song H, Sa Z, Liu F, Wang M, Wang G, Wan J, Zang Z, Jiang J, Yang ZX. Tunable synaptic behaviors of solution-processed InGaO films for artificial visual systems. MATERIALS HORIZONS 2024. [PMID: 39072692 DOI: 10.1039/d4mh00396a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/30/2024]
Abstract
Due to their persistent photoconductivity, amorphous metal oxide thin films are promising for construction of artificial visual systems. In this work, large-scale, uniformly distributed amorphous InGaO thin films with an adjustable In/Ga ratio and thickness are prepared successfully by a low-cost environmentally friendly and easy-to-handle solution process for constructing artificial visual systems. With the increase of the In/Ga ratio and film thickness, the number of oxygen vacancies increases, along with the increase of post-synaptic current triggered by illumination, benefiting the transition of short-term plasticity to long-term plasticity. With an optimal In/Ga ratio and film thickness, the conductance response difference at a decay of 0 s between the 1st and the 10th views of a 5 × 5 array InGaO thin film transistor is up to 2.88 μA, along with an increase in the Idecay 30s/Idecay 0s ratio from 45.24% to 53.24%, resulting in a high image clarity and non-volatile artificial visual memory. Furthermore, a three-layer artificial vision network is constructed to evaluate the image recognition capability, exhibiting an accuracy of up to 91.32%. All results promise low-cost and easy-to-handle amorphous InGaO thin films for future visual information processing and image recognition.
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Affiliation(s)
- Pengsheng Li
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Honglin Song
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410082, China.
| | - Zixu Sa
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Fengjing Liu
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Mingxu Wang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Guangcan Wang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Junchen Wan
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Zeqi Zang
- School of Physics, Shandong University, Jinan 2510100, China.
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics, Central South University, Changsha 410082, China.
| | - Zai-Xing Yang
- School of Physics, Shandong University, Jinan 2510100, China.
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3
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Leng K, Wan Y, Fu Y, Wang L, Wang Q. Si/CuO Heterojunction-Based Photomemristor for Reconfigurable, Non-Volatile, and Self-Powered In-Sensor Computing. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309945. [PMID: 38400705 DOI: 10.1002/smll.202309945] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/01/2023] [Revised: 01/16/2024] [Indexed: 02/25/2024]
Abstract
In-sensor computing has attracted considerable interest as a solution for overcoming the energy efficiency and response time limitations of the traditional von Neumann architecture. Recently, emerging memristors based on transition-metal oxides (TMOs) have attracted attention as promising candidates for in-memory computing owing to their tunable conductance, high speed, and low operational energy. However, the poor photoresponse of TMOs presents challenges for integrating sensing and processing units into a single device. This integration is crucial for eliminating the need for a sensor/processor interface and achieving energy-efficient in-sensor computing systems. In this study, a Si/CuO heterojunction-based photomemristor is proposed that combines the reversible resistive switching behavior of CuO with the appropriate optical absorption bandgap of the Si substrate. The proposed photomemristor demonstrates a simultaneous reconfigurable, non-volatile, and self-powered photoresponse, producing a microampere-level photocurrent at zero bias. The controlled migration of oxygen vacancies in CuO result in distinct energy-band bending at the interface, enabling multiple levels of photoresponsivity. Additionally, the device exhibits high stability and ultrafast response speed to the built-in electric field. Furthermore, the prototype photomemristor can be trained to emulate the attention-driven nature of the human visual system, indicating the tremendous potential of TMO-based photomemristors as hardware foundations for in-sensor computing.
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Affiliation(s)
- Kangmin Leng
- Department of Physics, School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Yu Wan
- Department of Physics, School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Yao Fu
- Department of Materials, School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Li Wang
- Department of Physics, School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
| | - Qisheng Wang
- Department of Physics, School of Physics and Materials Science, Nanchang University, Nanchang, 330031, China
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Othman DM, Weinstein J, Huang N, Ming W, Lyu Q, Hou B. Solution-processed colloidal quantum dots for internet of things. NANOSCALE 2024; 16:10947-10974. [PMID: 38804109 DOI: 10.1039/d4nr00203b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/29/2024]
Abstract
Colloidal quantum dots (CQDs) have been a hot research topic ever since they were successfully fabricated in 1993 via the hot injection method. The Nobel Prize in Chemistry 2023 was awarded to Moungi G. Bawendi, Louis E. Brus and Alexei I. Ekimov for the discovery and synthesis of quantum dots. The Internet of Things (IoT) has also attracted a lot of attention due to the technological advancements and digitalisation of the world. This review first aims to give the basics behind QD physics. After that, the history behind CQD synthesis and the different methods used to synthesize most widely researched CQD materials (CdSe, PbS and InP) are revisited. A brief introduction to what IoT is and how it works is also mentioned. Then, the most widely researched CQD devices that can be used for the main IoT components are reviewed, where the history, physics, the figures of merit (FoMs) and the state-of-the-art are discussed. Finally, the challenges and different methods for integrating CQDs into IoT devices are discussed, mentioning the future possibilities that await CQDs.
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Affiliation(s)
- Diyar Mousa Othman
- School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, UK.
| | - Julia Weinstein
- Department of Chemistry, The University of Sheffield, Sheffield, S3 7HF, UK
| | | | - Wenlong Ming
- School of Engineering, Cardiff University, Cardiff, CF24 3AA, UK
| | - Quan Lyu
- Cambridge Research Centre, Huawei Technologies Research & Development (UK) Ltd, Cambridge, CB4 0FY, UK.
| | - Bo Hou
- School of Physics and Astronomy, Cardiff University, Cardiff, CF24 3AA, UK.
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5
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Kim YB, Jeong JH, Park MH, Yun JM, Ma JH, Ha HJ, Kang SJ, Kang SJ. Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure. MATERIALS (BASEL, SWITZERLAND) 2024; 17:677. [PMID: 38591507 PMCID: PMC10856061 DOI: 10.3390/ma17030677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 01/24/2024] [Accepted: 01/29/2024] [Indexed: 04/10/2024]
Abstract
In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on-off switching behavior in the front channel of our oxide-oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn = 8:2. Compared to the IGZO single-layer phototransistor, the IGZO/IZO(8:2) phototransistor showed improved photoresponse characteristics, with photosensitivity and photoresponsivity values of 1.00 × 107 and 89.1 AW-1, respectively, under visible light wavelength illumination. Moreover, the electrical characteristics of the IGZO/IZO(8:2) transistor, such as field effect mobility (μsat) and current on/off ratio (Ion/Ioff), were highly enhanced compared to the IGZO transistor. The μsat and Ion/Ioff were increased by about 2.1 times and 2.3 times, respectively, compared to the IGZO transistor. This work provides an approach for fabricating visible-light phototransistors with elevated optoelectronic properties and low power consumption based on an oxide-oxide heterostructure. The phototransistor with improved performance can be applied to applications such as color-selective visible-light image sensors and biometric sensors interacting with human-machine interfaces.
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Affiliation(s)
- Yu Bin Kim
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
| | - Jun Hyung Jeong
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Min Ho Park
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Jung Min Yun
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
| | - Jin Hyun Ma
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Hyoun Ji Ha
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Seong Jae Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
| | - Seong Jun Kang
- Department of Advanced Materials Engineering for Information and Electronics, Kyung Hee University, Yongin 17104, Republic of Korea; (Y.B.K.); (J.H.J.); (M.H.P.); (J.M.Y.); (J.H.M.); (H.J.H.); (S.J.K.)
- Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea
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6
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Zhang J, Wang M, Li P, Sa Z, Liu F, Sun W, Li Y, Mu W, Jia Z, Chen M, Yang ZX. Toward Smart, Flexible, and Omnidirectional Self-Powered Photodetection by an All-Solution-Processed In 2O 3/Pbl 2 Heterojunction. ACS APPLIED MATERIALS & INTERFACES 2024; 16:3685-3693. [PMID: 38226599 DOI: 10.1021/acsami.3c16106] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/17/2024]
Abstract
Amorphous In2O3 film is emerging as a promising oxide semiconductor for next-generation electronics and optoelectronics owing to high mobility and wide band gap. However, the persistent photocurrent phenomenon and high carrier concentration in amorphous In2O3 film are challenging the photodetection performances, resulting in a long response time and low Ilight/Idark ratio. In this work, the In2O3/PbI2 heterojunction is constructed by an all-solution synthesis process to inhibit the persistent photocurrent phenomenon and large dark current. Benefiting from the built-in electric field at the heterojunction interface, the In2O3/PbI2 heterojunction photodetector exhibits excellent self-powered photodetection performances with an ultralow dark current of 10-12 A, a high Ilight/Idark ratio of 104, and fast response times of 0.6/0.6 ms. Furthermore, the entire solution synthesis process and amorphous characteristics enable the fabrication of an In2O3/PbI2 heterojunction photodetector on arbitrary substrates to realize specific functions. When configured onto the polyimide substrate, the In2O3/PbI2 heterojunction photodetector shows excellent mechanical flexibility, bending endurance, and photoresponse stability. When implanted onto the transparent substrate, the In2O3/PbI2 heterojunction photodetector exhibits an outstanding omnidirectional self-powdered photodetection performance and imaging capability. All results pave the way for an all-solution-processed amorphous In2O3 film in advanced high-performance photodetectors.
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Affiliation(s)
- Jie Zhang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Mingxu Wang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Pengsheng Li
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Zixu Sa
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Fengjing Liu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Wenzhang Sun
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Yang Li
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Wenxiang Mu
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
- Shenzhen Research Institute of Shandong University, Shenzhen 518057, China
| | - Zhitai Jia
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
- Shandong Research Institute of Industrial Technology, Jinan 250101, China
| | - Ming Chen
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
| | - Zai-Xing Yang
- State Key Laboratory of Crystal Materials, Institute of Novel Semiconductors, School of Physics, Shandong University, Jinan250100, China
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Kim IJ, Lee JS. Dopant Engineering of Hafnia-Based Ferroelectrics for Long Data Retention and High Thermal Stability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023:e2306871. [PMID: 37967323 DOI: 10.1002/smll.202306871] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/10/2023] [Revised: 10/30/2023] [Indexed: 11/17/2023]
Abstract
Hafnia-based ferroelectrics have gained much attention because they can be used in highly scaled, advanced complementary metal-oxide semiconductor (CMOS) memory devices. However, thermal stability should be considered when integrating hafnia-based ferroelectric transistors in advanced CMOS devices, as they can be exposed to high-temperature processes. This work proposed that doping of Al in hafnia-based ferroelectric material can lead to high thermal stability. A ferroelectric capacitor based on Al-doped hafnia, which can be used for one-transistor-one-capacitor applications, exhibits stable operation even after annealing at 900 °C. Moreover, it demonstrates that the ferroelectric transistors based on Al-doped hafnia for one-transistor applications, such as ferroelectric NAND, retain their memory states for 10 years at 100 °C. This study presents a practical method to achieve thermally stable ferroelectric memories capable of enduring high-temperature processes and operation conditions.
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Affiliation(s)
- Ik-Jyae Kim
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Jang-Sik Lee
- Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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Wang S, Huang W, Tian J, Peng J, Cao J. A near-infrared photodetector based on carbon nanotube transistors exhibits ultra-low dark current through field-modulated charge carrier transport. Phys Chem Chem Phys 2023; 25:26991-26998. [PMID: 37667819 DOI: 10.1039/d3cp01497e] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 09/06/2023]
Abstract
Near-infrared photodetectors (NIR PDs) are devices that convert infrared light signals, which are widely used in military and civilian applications, into electrical signals. However, a common problem associated with PDs is a high dark current. Interestingly, gate voltage can regulate carrier migration in the channels. In this study, a PbS quantum dot heterojunction combined with a carbon nanotube (CNT) field effect transistor (FET) is designed and described. Significantly, this NIR PD achieves field-modulated carrier transport in a CNT transistor, in which the dark current is effectively regulated by the gate voltage. In this PD, an ultra-low dark current of 8 pA is obtained by gate voltage regulation. Moreover, the device shows a fast response speed of 6.5 ms and a high normalized detectivity of 4.75 × 1011 Jones at 0.085 W cm-2 power density and -0.2 V bias voltage. Overall, this work details a novel strategy for the fabrication of a PD with an ultra-low dark current based on a FET.
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Affiliation(s)
- Sheng Wang
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, Hunan 411105, China.
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan 411105, China
| | - Wuhua Huang
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, Hunan 411105, China.
- Guangxi Zhuang Autonomous Region Institute of Metrology & Test, 530200, China
| | - Junlong Tian
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, Hunan 411105, China.
- Department of Electronic Science, College of Big Data and Information Engineering, Guizhou University, Guiyang 550025, China
| | - Jie Peng
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, Hunan 411105, China.
| | - Juexian Cao
- Hunan Key Laboratory of Micro-Nano Energy Materials and Devices, Laboratory for Quantum Engineering and Micro-Nano Energy Technology, School of Physics and Optoelectronic, Xiangtan University, Xiangtan, Hunan 411105, China.
- Hunan Institute of Advanced Sensing and Information Technology, Xiangtan 411105, China
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9
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Kim T, Choi CH, Hur JS, Ha D, Kuh BJ, Kim Y, Cho MH, Kim S, Jeong JK. Progress, Challenges, and Opportunities in Oxide Semiconductor Devices: A Key Building Block for Applications Ranging from Display Backplanes to 3D Integrated Semiconductor Chips. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204663. [PMID: 35862931 DOI: 10.1002/adma.202204663] [Citation(s) in RCA: 14] [Impact Index Per Article: 14.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/24/2022] [Revised: 07/04/2022] [Indexed: 06/15/2023]
Abstract
As Si has faced physical limits on further scaling down, novel semiconducting materials such as 2D transition metal dichalcogenides and oxide semiconductors (OSs) have gained tremendous attention to continue the ever-demanding downscaling represented by Moore's law. Among them, OS is considered to be the most promising alternative material because it has intriguing features such as modest mobility, extremely low off-current, great uniformity, and low-temperature processibility with conventional complementary-metal-oxide-semiconductor-compatible methods. In practice, OS has successfully replaced hydrogenated amorphous Si in high-end liquid crystal display devices and has now become a standard backplane electronic for organic light-emitting diode displays despite the short time since their invention in 2004. For OS to be implemented in next-generation electronics such as back-end-of-line transistor applications in monolithic 3D integration beyond the display applications, however, there is still much room for further study, such as high mobility, immune short-channel effects, low electrical contact properties, etc. This study reviews the brief history of OS and recent progress in device applications from a material science and device physics point of view. Simultaneously, remaining challenges and opportunities in OS for use in next-generation electronics are discussed.
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Affiliation(s)
- Taikyu Kim
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Cheol Hee Choi
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Jae Seok Hur
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Daewon Ha
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Bong Jin Kuh
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Yongsung Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Min Hee Cho
- Semiconductor R&D Center, Samsung Electronics, Hwaseong, Gyeonggi-do, 18848, Republic of Korea
| | - Sangwook Kim
- Samsung Advanced Institute of Technology, Samsung Electronics, Suwon, Gyeonggi-do, 16678, Republic of Korea
| | - Jae Kyeong Jeong
- Department of Electronic Engineering, Hanyang University, Seoul, 04763, Republic of Korea
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10
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Dang B, Liu K, Wu X, Yang Z, Xu L, Yang Y, Huang R. One-Phototransistor-One-Memristor Array with High-Linearity Light-Tunable Weight for Optic Neuromorphic Computing. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2204844. [PMID: 35917248 DOI: 10.1002/adma.202204844] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/29/2022] [Revised: 07/21/2022] [Indexed: 06/15/2023]
Abstract
The recent advances in optic neuromorphic devices have led to a subsequent rise in use for construction of energy-efficient artificial-vision systems. The widespread use can be attributed to their ability to capture, store, and process visual information from the environment. The primary limitations of existing optic neuromorphic devices include nonlinear weight updates, cross-talk issues, and silicon process incompatibility. In this study, a highly linear, light-tunable, cross-talk-free, and silicon-compatible one-phototransistor-one-memristor (1PT1R) optic memristor is experimentally demonstrated for the implementation of an optic artificial neural network (OANN). For optic image recognition in the experiment, an OANN is constructed using a 16 × 3 1PT1R memristor array, and it is trained on an online platform. The model yields an accuracy of 99.3% after only ten training epochs. The 1PT1R memristor, which shows good performance, demonstrates its ability as an excellent hardware solution for highly efficient optic neuromorphic and edge computing.
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Affiliation(s)
- Bingjie Dang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Keqin Liu
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Xulei Wu
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Zhen Yang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Liying Xu
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
| | - Yuchao Yang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Center for Brain Inspired Chips, Institute for Artificial Intelligence, Peking University, Beijing, 100871, China
- Center for Brain Inspired Intelligence, Chinese Institute for Brain Research (CIBR), Beijing, Beijing, 102206, China
- Beijing Academy of Artificial Intelligence, Beijing, 100084, China
| | - Ru Huang
- Beijing Advanced Innovation Center for Integrated Circuits, School of Integrated Circuits, Peking University, Beijing, 100871, China
- Center for Brain Inspired Chips, Institute for Artificial Intelligence, Peking University, Beijing, 100871, China
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11
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Lim T, Lee J, Woo DY, Kwak JY, Jang J. Multifunctional Crystalline InGaSnO Phototransistor Exhibiting Photosensing and Photosynaptic Behavior Using Oxygen Vacancy Engineering. SMALL METHODS 2023; 7:e2300251. [PMID: 37316979 DOI: 10.1002/smtd.202300251] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/26/2023] [Revised: 05/15/2023] [Indexed: 06/16/2023]
Abstract
A multifunctional optoelectronic device implementing photodetector, photosynapse, and photomemory is of increasing attention for neuromorphic system. This enables multiple devices to be replaced with a single device, which simplifies the structure of complex, highly integrated electronics. Here, a multifunctional c-axis-aligned crystalline indium gallium tin oxide thin-film transistor (TFT) optoelectronic device is demonstrated. The photodetecting and photosynaptic behaviors could be demonstrated by tuning of gate pulse. The device shows a high responsivity of 1.1 × 106 A W-1 to blue light (467 nm) and cutoff frequency (f-3dB ) of 2400 Hz exhibiting high frequency switching using a gate reset pulse. It is possible to implement photosynaptic behavior using persistent photoconductivity effect by applying a gate bias to make the TFT depletion mode. When potentiation and depression of synaptic weight are implemented with light pulse and gate voltage pulse, respectively, 64-state potentiation-depression curves are demonstrated with excellent nonlinearity of 1.13 and 2.03, respectively. When an artificial neural network is constructed with this device for the Modified National Institute of Standards and Technology training pattern recognition simulation, it shows a high pattern recognition accuracy of 90.4%.
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Affiliation(s)
- Taebin Lim
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Jiseob Lee
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
| | - Dong Yeon Woo
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 02841, Republic of Korea
| | - Joon Young Kwak
- Center for Neuromorphic Engineering, Korea Institute of Science and Technology, Seoul, 02792, South Korea
- Division of Nanoscience and Technology, Korea University of Science and Technology (UST), Daejeon, 34113, Republic of Korea
| | - Jin Jang
- Advanced Display Research Center (ADRC), Department of Information Display, Kyung Hee University, Seoul, 02447, South Korea
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12
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Patel M, Kim S, Kim J. Field-Induced Transparent Electrode-Integrated Transparent Solar Cells and Heater for Active Energy Windows: Broadband Energy Harvester. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023; 10:e2303895. [PMID: 37435914 PMCID: PMC10502661 DOI: 10.1002/advs.202303895] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/14/2023] [Indexed: 07/13/2023]
Abstract
Invisible power generation by natural and artificial light enables sustainability by onsite-power deployment, lower cost, and minimal burden on the built environment. However, dark, opaque photovoltaics limit light utilization in a transparent way. Herein, it is proposed that the active energy window (AEW) invisibly features power production, providing higher freedom for onsite power generators in window objects without limiting human vision. The AEW has a transparent photovoltaic (TPV) for onsite power and a transparent heater (TH) to remove the effects of shadows from snow and recover the power lost. Moreover, a heating function is applied to remove the effects of weathering related to snow. The proposed prototype integrates a TPV-TH, offering ultraviolet (UV)-blocking, daylighting, thermal comfort, and onsite power with a power conversion efficiency of 3% (AM1.5G). Field-induced transparent electrodes are applied to the TPV-TH and designed considering the AEW. Owing to these electrodes, the AEW ensure a wide field-of-view without optical dead zones, ensuring see-through vision. The first TPV-TH integration is performed into a 2 cm2 -window that generates onsite power of 6 mW and has an average visible transmittance of ≈39%. It is believed that light can be utilized with comfort through the AEW in self-sustainable buildings and vehicles.
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Affiliation(s)
- Malkeshkumar Patel
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE) and Department of Electrical EngineeringIncheon National University119 Academy Rd. YeonsuIncheon22012Republic of Korea
| | - Sangho Kim
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE) and Department of Electrical EngineeringIncheon National University119 Academy Rd. YeonsuIncheon22012Republic of Korea
| | - Joondong Kim
- Photoelectric and Energy Device Application Lab (PEDAL), Multidisciplinary Core Institute for Future Energies (MCIFE) and Department of Electrical EngineeringIncheon National University119 Academy Rd. YeonsuIncheon22012Republic of Korea
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13
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Safaruddin AS, Bermundo JPS, Wu C, Uenuma M, Yamamoto A, Kimura M, Uraoka Y. High- k Solution-Processed Barium Titanate/Polysiloxane Nanocomposite for Low-Temperature Ferroelectric Thin-Film Transistors. ACS OMEGA 2023; 8:29939-29948. [PMID: 37636973 PMCID: PMC10448671 DOI: 10.1021/acsomega.2c08142] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Accepted: 07/20/2023] [Indexed: 08/29/2023]
Abstract
Ferroelectric nanoparticles have attracted much attention for numerous electronic applications owing to their nanoscale structure and size-dependent behavior. Barium titanate (BTO) nanoparticles with two different sizes (20 and 100 nm) were synthesized and mixed with a polysiloxane (PSX) polymer forming a nanocomposite solution for high-k nanodielectric films. Transition from the ferroelectric to paraelectric phase of BTO with different nanoparticle dimensions was evaluated through variable-temperature X-ray diffraction measurement accompanied by electrical analysis using capacitor structures. A symmetric single 200 peak was constantly detected at different measurement temperatures for the 20 nm BTO sample, marking a stable cubic crystal structure. 100 nm BTO on the other hand shows splitting of 200/002 peaks correlating to a tetragonal crystal form which further merged, thus forming a single 200 peak at higher temperatures. Smaller BTO dimension exhibits clockwise hysteresis in capacitance-voltage measurement and correlates to a cubic crystal structure which possesses paraelectric properties. Bigger BTO dimension in contrast, demonstrates counterclockwise hysteresis owing to their tetragonal crystal form. Through further Rietveld refinement analysis, we found that the tetragonality (c/a) of 100 nm BTO decreases at a higher temperature which narrows the hysteresis window. A wider hysteresis window was observed when utilizing 100 nm BTO compared to 20 nm BTO even at a lower loading ratio. The present findings imply different hysteresis mechanisms for BTO nanoparticles with varying dimensions which is crucial in understanding the role of how the BTO size tunes the crystal structures for integration in thin-film transistor devices.
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Affiliation(s)
- Aimi Syairah Safaruddin
- Division
of Materials Science, Nara Institute of
Science and Technology, Nara 630-0192, Japan
| | - Juan Paolo S. Bermundo
- Division
of Materials Science, Nara Institute of
Science and Technology, Nara 630-0192, Japan
| | - Chuanjun Wu
- Division
of Materials Science, Nara Institute of
Science and Technology, Nara 630-0192, Japan
| | - Mutsunori Uenuma
- Division
of Materials Science, Nara Institute of
Science and Technology, Nara 630-0192, Japan
| | - Atsuko Yamamoto
- Display
Solutions Patterning Materials, Merck Electronics
Ltd., Shizuoka 437-1412, Japan
| | - Mutsumi Kimura
- Department
of Electronics and Informatics, Ryukoku
University, Seta 520-2194, Japan
| | - Yukiharu Uraoka
- Division
of Materials Science, Nara Institute of
Science and Technology, Nara 630-0192, Japan
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14
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Kim JH, Jung BK, Kim SK, Yun KR, Ahn J, Oh S, Jeon MG, Lee TJ, Kim S, Oh N, Oh SJ, Seong TY. Ultrasensitive Near-Infrared InAs Colloidal Quantum Dot-ZnON Hybrid Phototransistor Based on a Gradated Band Structure. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2023:e2207526. [PMID: 37088787 DOI: 10.1002/advs.202207526] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/20/2022] [Revised: 03/14/2023] [Indexed: 05/03/2023]
Abstract
Amorphous metal oxide semiconductor phototransistors (MOTPs) integrated with colloidal quantum dots (QDs) (QD-MOTPs) are promising infrared photodetectors owing to their high photoconductive gain, low off-current level, and high compatibility with pixel circuits. However, to date, the poor mobility of conventional MOTPs, such as indium gallium zinc oxide (IGZO), and the toxicity of lead (Pb)-based QDs, such as lead sulfide and lead selenide, has limited the commercial applications of QD-MOTPs. Herein, an ultrasensitive QD-MOTP fabricated by integrating a high-mobility zinc oxynitride (ZnON)-based MOTP and lead-free indium arsenide (InAs) QDs is demonstrated. A new gradated bandgap structure is introduced in the InAs QD layer that absorbs infrared light, which prevents carriers from moving backward and effectively reduces electron-hole recombination. Chemical, optical, and structural analyses confirm the movement of the photoexcited carriers in the graded band structure. The novel QD-MOTP exhibits an outstanding performance with a responsivity of 1.15 × 105 A W-1 and detectivity of 5.32 × 1016 Jones at a light power density of 2 µW cm-2 under illumination at 905 nm.
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Affiliation(s)
- Jong-Ho Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Byung Ku Jung
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Su-Kyung Kim
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Kwang-Ro Yun
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Junhyuk Ahn
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seongkeun Oh
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Min-Gyu Jeon
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Tae-Ju Lee
- Department of Nanophotonics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Seongchan Kim
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04673, Republic of Korea
| | - Nuri Oh
- Division of Materials Science and Engineering, Hanyang University, 222 Wangsimni-ro, Seongdong-gu, Seoul, 04673, Republic of Korea
| | - Soong Ju Oh
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
| | - Tae-Yeon Seong
- Department of Materials Science and Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
- Department of Nanophotonics, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul, 02841, Republic of Korea
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15
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Zhang Y, Huang Z, Jiang J. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2186689. [PMID: 37007672 PMCID: PMC10054230 DOI: 10.1080/14686996.2023.2186689] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.
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Affiliation(s)
- Yi Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
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16
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Zeng YH, Chu FJ, Shih LC, Chen YC, Chen JS. Dual Light Temporal Coding Modes Enabled by Nanoparticle-Mediated Phototransistors via Gate Bias Modulation for Brain-Inspired Visual Perception. ACS APPLIED MATERIALS & INTERFACES 2023; 15:9563-9573. [PMID: 36752393 DOI: 10.1021/acsami.2c18699] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
The core integration and cooperation of the retina, neurons, and synapses in the visual systems enable humans to effectively sense and process visual information with low power consumption. To mimic the human visual system, an artificial sensory nerve, along with optical sensing─a paired-pulse ratio (PPR) of the light pulse stimulated currents─and neural coding has been developed. For performing the artificial visual perception functions, we consistently reveal the positive and negative correlations between the PPR index and light pulse time interval by applying two consecutive light stimuli with gate voltages of -10 and 5 V, respectively, to a phototransistor. This phototransistor contains a heterostructured channel layer composed of zinc-oxide nanoparticles (ZnO NPs) interconnected with a solution-processed zinc-tin oxide (ZTO) film. The oxygen adsorption and desorption on the ZnO NP surface under light illumination are responsible for the positive-sloped PPR; the electron trapping effect at the ZnO NP/SiO2 interface is attributed to the negative-sloped PPR. The various accountable light power densities and number of surface trap states are considered to be directly realizing these spike-timing interval-dependent characteristics. The actual benefit of these characteristics is the dual temporal coding modes based on multiplicative operation using a ZTO/ZnO NP phototransistor realized via the active gate voltage modulation. The contrary tendency of the PPR index and temporal coding─a major biological neural coding─is well demonstrated by the potential of ZTO/ZnO NP phototransistors to be implemented in sensor networks for an artificial visual perception.
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Affiliation(s)
- Yun-Huei Zeng
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Fang-Jui Chu
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Li-Chung Shih
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Yu-Chieh Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
| | - Jen-Sue Chen
- Department of Materials Science and Engineering, National Cheng Kung University, Tainan 70101, Taiwan
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17
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Liu X, Li S, Li Z, Cao F, Su L, Shtansky DV, Fang X. Enhanced Response Speed in 2D Perovskite Oxides-Based Photodetectors for UV Imaging through Surface/Interface Carrier-Transport Modulation. ACS APPLIED MATERIALS & INTERFACES 2022; 14:48936-48947. [PMID: 36273339 DOI: 10.1021/acsami.2c15946] [Citation(s) in RCA: 18] [Impact Index Per Article: 9.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
The long-time decay process induced by the persistent photoconductivity (PPC) in metal oxides-based photodetectors (PDs) impedes our demands for high-speed photodetectors. 2D perovskite oxides, emerging candidates for future high-performance PDs, also suffer from the PPC effect. Here, by integrating 2D perovskite Sr2Nb3O10 (SNO) nanosheets and nitrogen-doped graphene quantum dots (NGQDs), a unique nanoscale heterojunction is designed to modulate surface/interface carrier transport for enhanced response speed. Notably, the decay time is reduced from hundreds of seconds to a few seconds. The 4%NGQDs-SNO PD exhibits excellent performance with a photocurrent of 0.47 μA, a high on-off ratio of 2.2 × 104, and a fast pulse response speed (τdecay = 67.3 ms), making it promising for UV imaging. The trap-involved decay process plays a dominant role in determining the decay time, resulting in the PPC effect in SNO PD, and the trap states mainly originate from oxygen vacancies and chemisorbed oxygen molecules. A significantly enhanced photoresponse speed in NGQDs-SNO PDs can be ascribed to the modulated surface/interface trap states and the efficient carrier pathway provided by the nanoscale heterojunction. This work provides an effective way to enhance the response speed in 2D perovskite oxides constrained by PPC via surface/interface engineering, promoting their applications in optoelectronics.
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Affiliation(s)
- Xinya Liu
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai200433, P. R. China
| | - Siyuan Li
- Department of Chemistry, City University of Hong Kong, Hong Kong999077, P. R. China
| | - Ziqing Li
- Institute of Optoelectronics, Fudan University, Shanghai200433, P. R. China
| | - Fa Cao
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai200433, P. R. China
| | - Li Su
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai200433, P. R. China
| | - Dmitry V Shtansky
- National University of Science and Technology "MISIS", Leninsky Prospect 4, Moscow119049, Russia
| | - Xiaosheng Fang
- Department of Materials Science, State Key Laboratory of Molecular Engineering of Polymers, Fudan University, Shanghai200433, P. R. China
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18
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Seung H, Choi C, Kim DC, Kim JS, Kim JH, Kim J, Park SI, Lim JA, Yang J, Choi MK, Hyeon T, Kim DH. Integration of synaptic phototransistors and quantum dot light-emitting diodes for visualization and recognition of UV patterns. SCIENCE ADVANCES 2022; 8:eabq3101. [PMID: 36223475 PMCID: PMC9555778 DOI: 10.1126/sciadv.abq3101] [Citation(s) in RCA: 17] [Impact Index Per Article: 8.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/05/2023]
Abstract
Synaptic photodetectors exhibit photon-triggered synaptic plasticity, which thus can improve the image recognition rate by enhancing the image contrast. However, still, the visualization and recognition of invisible ultraviolet (UV) patterns are challenging, owing to intense background noise. Here, inspired by all-or-none potentiation of synapse, we develop an integrated device of synaptic phototransistors (SPTrs) and quantum dot light-emitting diodes (QLEDs), facilitating noise reduction and visualization of UV patterns through on-device preprocessing. The SPTrs convert noisy UV inputs into a weighted photocurrent, which is applied to the QLEDs as a voltage input through an external current-voltage-converting circuit. The threshold switching characteristics of the QLEDs result in amplified current and visible illumination by the suprathreshold input voltage or nearly zero current and no visible illumination by the input voltage below the threshold. The preprocessing of image data with the SPTr-QLED can amplify the image contrast, which is helpful for high-accuracy image recognition.
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Affiliation(s)
- Hyojin Seung
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Changsoon Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Center for Opto-Electronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Dong Chan Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Ji Su Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Jeong Hyun Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
| | - Junhee Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
| | - Soo Ik Park
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Jung Ah Lim
- Center for Opto-Electronic Materials and Devices, Post-silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Jiwoong Yang
- Department of Energy Science and Engineering, Daegu Gyeongbuk Institute of Science and Technology (DGIST), Daegu 42988, Republic of Korea
| | - Moon Kee Choi
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, Center for Future Semiconductor Technology (FUST), Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
- Corresponding author. (D.-H.K.); (T.H.); (M.K.C.)
| | - Taeghwan Hyeon
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Corresponding author. (D.-H.K.); (T.H.); (M.K.C.)
| | - Dae-Hyeong Kim
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Republic of Korea
- School of Chemical and Biological Engineering, Institute of Chemical Processes, Seoul National University, Seoul 08826, Republic of Korea
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, Republic of Korea
- Corresponding author. (D.-H.K.); (T.H.); (M.K.C.)
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19
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Liang K, Wang R, Huo B, Ren H, Li D, Wang Y, Tang Y, Chen Y, Song C, Li F, Ji B, Wang H, Zhu B. Fully Printed Optoelectronic Synaptic Transistors Based on Quantum Dot-Metal Oxide Semiconductor Heterojunctions. ACS NANO 2022; 16:8651-8661. [PMID: 35451308 DOI: 10.1021/acsnano.2c00439] [Citation(s) in RCA: 25] [Impact Index Per Article: 12.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Optoelectronic synaptic transistors with hybrid heterostructure channels have been extensively developed to construct artificial visual systems, inspired by the human visual system. However, optoelectronic transistors taking full advantages of superior optoelectronic synaptic behaviors, low-cost processes, low-power consumption, and environmental benignity remained a challenge. Herein, we report a fully printed, high-performance optoelectronic synaptic transistor based on hybrid heterostructures of heavy-metal-free InP/ZnSe core/shell quantum dots (QDs) and n-type SnO2 amorphous oxide semiconductors (AOSs). The elaborately designed heterojunction improves the separation efficiency of photoexcited charges, leading to high photoresponsivity and tunable synaptic weight changes. Under the coordinated modulation of electrical and optical modes, important biological synaptic behaviors, including excitatory postsynaptic current, short/long-term plasticity, and paired-pulse facilitation, were demonstrated with a low power consumption (∼5.6 pJ per event). The InP/ZnSe QD/SnO2 based artificial vision system illustrated a significantly improved accuracy of 91% in image recognition, compared to that of bare SnO2 based counterparts (58%). Combining the outstanding synaptic characteristics of both AOS materials and heterojunction structures, this work provides a printable, low-cost, and high-efficiency strategy to achieve advanced optoelectronic synapses for neuromorphic electronics and artificial intelligence.
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Affiliation(s)
- Kun Liang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Rui Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Bingbing Huo
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Huihui Ren
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Dingwei Li
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yan Wang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yingjie Tang
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, China
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Yitong Chen
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- School of Materials and Engineering, Zhejiang University, Hangzhou 310027, China
| | - Chunyan Song
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
| | - Fanfan Li
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Botao Ji
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou 310024, China
- Institute of Advanced Technology, Westlake Institute for Advanced Study, Hangzhou 310024, China
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20
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Wang R, Wang S, Liang K, Xin Y, Li F, Cao Y, Lv J, Liang Q, Peng Y, Zhu B, Ma X, Wang H, Hao Y. Bio-Inspired In-Sensor Compression and Computing Based on Phototransistors. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2201111. [PMID: 35534444 DOI: 10.1002/smll.202201111] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/20/2022] [Revised: 04/10/2022] [Indexed: 06/14/2023]
Abstract
The biological nervous system possesses a powerful information processing capability, and only needs a partial signal stimulation to perceive the entire signal. Likewise, the hardware implementation of an information processing system with similar capabilities is of great significance, for reducing the dimensions of data from sensors and improving the processing efficiency. Here, it is reported that indium-gallium-zinc-oxide thin film phototransistors exhibit the optoelectronic switching and light-tunable synaptic characteristics for in-sensor compression and computing. Phototransistor arrays can compress the signal while sensing, to realize in-sensor compression. Additionally, a reservoir computing network can also be implemented via phototransistors for in-sensor computing. By integrating these two systems, a neuromorphic system for high-efficiency in-sensor compression and computing is demonstrated. The results reveal that even for cases where the signal is compressed by 50%, the recognition accuracy of reconstructed signal still reaches ≈96%. The work paves the way for efficient information processing of human-computer interactions and the Internet of Things.
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Affiliation(s)
- Rui Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Saisai Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Kun Liang
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Yuhan Xin
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Fanfan Li
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Yaxiong Cao
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Jiaxin Lv
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Qi Liang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Yaqian Peng
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Advanced Materials and Nanotechnology, Xidian University, Xi'an, 710071, China
| | - Bowen Zhu
- Key Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang Province, School of Engineering, Westlake University, Hangzhou, 310024, China
| | - Xiaohua Ma
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Hong Wang
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China
| | - Yue Hao
- Key Laboratory of Wide Band Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an, 710071, China
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21
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Kim KS, Kim MS, Chung J, Kim D, Lee IS, Kim HJ. Polyimide-Doped Indium-Gallium-Zinc Oxide-Based Transparent and Flexible Phototransistor for Visible Light Detection. ACS APPLIED MATERIALS & INTERFACES 2022; 14:21150-21158. [PMID: 35482003 DOI: 10.1021/acsami.2c01769] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We report a transparent and flexible polyimide (PI)-doped single-layer (PSL) phototransistor for the detection of visible light. The PSL was deposited on a SiO2 gate insulator by a co-sputtering process using amorphous indium-gallium-zinc oxide (IGZO) and PI targets simultaneously. The PSL acted as both a channel layer and a visible-light absorption layer. PI is one of the few flexible organic materials that can be fabricated into sputtering targets. Compared with the IGZO phototransistor without PI doping, the PSL phototransistor exhibited improved optoelectronic characteristics under illumination with 635 nm red light of 1 mW/mm2 intensity; the obtained photoresponsivity ranged from 15.00 to 575.00 A/W, the photosensitivity from 1.38 × 101 to 9.86 × 106, and the specific detectivity from 1.35 × 107 to 5.83 × 1011 Jones. These improvements are attributed to subgap states induced by the PI doping, which formed decomposed organic molecules, oxygen vacancies, and metal hydroxides. Furthermore, a flexible PSL phototransistor was fabricated and showed stable optoelectronic characteristics even after 10,000 bending tests.
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Affiliation(s)
- Ki Seok Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
- LG Display Co., Ltd., 245, LG-ro, Wollong-myeon, Paju-si, Gyeonggi-do 10845, Republic of Korea
| | - Min Seong Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Jusung Chung
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Dongwoo Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - I Sak Lee
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
| | - Hyun Jae Kim
- School of Electrical and Electronic Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 03722, Republic of Korea
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22
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Jin C, Liu W, Xu Y, Huang Y, Nie Y, Shi X, Zhang G, He P, Zhang J, Cao H, Sun J, Yang J. Artificial Vision Adaption Mimicked by an Optoelectrical In 2O 3 Transistor Array. NANO LETTERS 2022; 22:3372-3379. [PMID: 35343229 DOI: 10.1021/acs.nanolett.2c00599] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Simulation of biological visual perception has gained considerable attention. In this paper, an optoelectrical In2O3 transistor array with a negative photoconductivity behavior is designed using a side-gate structure and a screen-printed ion-gel as the gate insulator. This paper is the first to observe a negative photoconductivity in electrolyte-gated oxide devices. Furthermore, an artificial visual perception system capable of self-adapting to environmental lightness is mimicked using the proposed device array. The transistor device array shows a self-adaptive behavior of light under different levels of light intensity, successfully demonstrating the visual adaption with an adjustable threshold range to the external environment. This study provides a new way to create an environmentally adaptive artificial visual perception system and has far-reaching significance for the future of neuromorphic electronics.
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Affiliation(s)
- Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Wanrong Liu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Yunchao Xu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Yulong Huang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Yiling Nie
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Xiaofang Shi
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Gengming Zhang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Pei He
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Jian Zhang
- School of Material Science and Engineering, Guilin University of Electronic Technology, Guilin, 541004, P. R. China
| | - Hongtao Cao
- Laboratory of Advanced Nano Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, P. R. China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
| | - Junliang Yang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, P. R. China
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23
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Subramanian A, Azimi M, Leong CY, Lee SL, Santato C, Cicoira F. Solution-Processed Titanium Dioxide Ion-Gated Transistors and Their Application for pH Sensing. FRONTIERS IN ELECTRONICS 2022. [DOI: 10.3389/felec.2022.813535] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/13/2022] Open
Abstract
Titanium dioxide (TiO2) is an abundant metal oxide, widely used in food industry, cosmetics, medicine, water treatment and electronic devices. TiO2 is of interest for next-generation indium-free thin-film transistors and ion-gated transistors due to its tunable optoelectronic properties, ambient stability, and solution processability. In this work, we fabricated TiO2 films using a wet chemical approach and demonstrated their transistor behavior with room temperature ionic liquids and aqueous electrolytes. In addition, we demonstrated the pH sensing behavior of the TiO2 IGTs with a sensitivity of ∼48 mV/pH. Furthermore, we demonstrated a low temperature (120°C), solution processed TiO2-based IGTs on flexible polyethylene terephthalate (PET) substrates, which were stable under moderate tensile bending.
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24
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Voltage controlled bio-organic inverse phototransistor. Biointerphases 2022; 17:021003. [PMID: 35303768 DOI: 10.1116/6.0001692] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/17/2022] Open
Abstract
Thin films of poly-d-lysine act as polar organic and are also light sensitive. The capacitance-voltage, current-voltage, and transistor behavior were studied to gauge the photoresponse of possible poly-d-lysine thin film devices both with and without methylene blue as an additive. Transistors fabricated from poly-d-lysine act as inverse phototransistors, i.e., the on-state current is greatest in the absence of illumination. The poly-d-lysine thin film capacitance and the transistor current decrease with illumination, both with and without methylene blue as an additive. This suggests that the unbinding of photo exciton is significantly hindered in this system which is supported by the significant charge carrier lifetime for poly-d-lysine films both with and without methylene blue. For the majority carrier, the transistor geometry appears to depend on the gate voltage; in other words, the majority carrier depends on the polarization of the poly-d-lysine films, both with and without methylene blue as an additive.
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25
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Lin YC, Yang WC, Chiang YC, Chen WC. Recent Advances in Organic Phototransistors: Nonvolatile Memory, Artificial Synapses, and Photodetectors. SMALL SCIENCE 2022. [DOI: 10.1002/smsc.202100109] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/21/2022] Open
Affiliation(s)
- Yan-Cheng Lin
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
| | - Wei-Chen Yang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Yun-Chi Chiang
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
| | - Wen-Chang Chen
- Department of Chemical Engineering National Taiwan University Taipei 10617 Taiwan
- Advanced Research Center of Green Materials Science and Technology National Taiwan University Taipei 10617 Taiwan
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