1
|
He C, Tang Z, Liu L, Maier SA, Wang X, Ren H, Pan A. Nonlinear Boost of Optical Angular Momentum Selectivity by Hybrid Nanolaser Circuits. NANO LETTERS 2024; 24:1784-1791. [PMID: 38265953 DOI: 10.1021/acs.nanolett.3c04830] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/26/2024]
Abstract
Selective control of light is essential for optical science and technology, with numerous applications. However, optical selectivity in the angular momentum of light has been quite limited, remaining constant by increasing the incident light power on previous passive optical devices. Here, we demonstrate a nonlinear boost of optical selectivity in both the spin and orbital angular momentum of light through near-field selective excitation of single-mode nanolasers. Our designed hybrid nanolaser circuits consist of plasmonic metasurfaces and individually placed perovskite nanowires, enabling subwavelength focusing of angular-momentum-distinctive plasmonic fields and further selective excitation of nanolasers in nanowires. The optically selected nanolaser with a nonlinear increase of light emission greatly enhances the baseline optical selectivity offered by the metasurface from about 0.4 up to near unity. Our demonstrated hybrid nanophotonic platform may find important applications in all-optical logic gates and nanowire networks, ultrafast optical switches, nanophotonic detectors, and on-chip optical and quantum information processing.
Collapse
Affiliation(s)
- Chenglin He
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Zilan Tang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Liang Liu
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Stefan A Maier
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
- Department of Physics, Imperial College London, London SW7 2AZ, U.K
| | - Xiaoxia Wang
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
| | - Haoran Ren
- School of Physics and Astronomy, Faculty of Science, Monash University, Melbourne, Victoria 3800, Australia
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration and Key Laboratory for MicroNano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Materials Science and Engineering, Hunan University, Changsha 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha 410081, P. R. China
| |
Collapse
|
2
|
Wen K, Cao Y, Gu L, Wang S, Qian D, Wang J, Kuang Z, Luo M, Wang G, Guan S, Li M, Yang H, Xing G, Wang N, Zhu L, Peng Q, Huang W, Wang J. Continuous-Wave Lasing in Perovskite LEDs with an Integrated Distributed Feedback Resonator. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2303144. [PMID: 37732391 DOI: 10.1002/adma.202303144] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/04/2023] [Revised: 07/13/2023] [Indexed: 09/22/2023]
Abstract
Realization of electrically pumped laser diodes based on solution-processed semiconductors is a long-standing challenge. Metal halide perovskites have shown great potential toward this goal due to their excellent optoelectronic properties. Continuous-wave (CW) optically pumped lasing in a real electroluminescent device represents a key step to current-injection laser diodes, but it has not yet been realized. This is mainly due to the challenge of incorporating a resonant cavity into an efficient light-emitting diode (LED) able to sustain intensive carrier injection. Here, CW lasing is reported in an efficient perovskite LED with an integrated distributed feedback resonator, which shows a low lasing threshold of 220 W cm-2 at 110 K. Importantly, the LED works well at a current density of 330 A cm-2 , indicating the carrier injection rate already exceeds the threshold of optically pumping. The results suggest that electrically pumped perovskite laser diodes can be achieved once the Joule heating issue is overcome.
Collapse
Affiliation(s)
- Kaichuan Wen
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Yu Cao
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
- Strait Institute of Flexible Electronics (SIFE Future Technologies), Fujian Normal University, Fuzhou, 350117, China
| | - Lianghui Gu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Saixue Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Dongmin Qian
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Jingmin Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Zhiyuan Kuang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengyi Luo
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Gang Wang
- Institute of Joint Key Laboratory of the Applied Physics and Materials Engineering, University of Macao, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Shuzhen Guan
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Mengmeng Li
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Heng Yang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Guichuan Xing
- Institute of Joint Key Laboratory of the Applied Physics and Materials Engineering, University of Macao, Avenida da Universidade, Taipa, Macao, 999078, China
| | - Nana Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Lin Zhu
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Qiming Peng
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
| | - Wei Huang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
| | - Jianpu Wang
- Key Laboratory of Flexible Electronics (KLOFE), Institute of Advanced Materials (IAM) & School of Flexible Electronics (Future Technologies), Nanjing Tech University (NanjingTech), 30 South Puzhu Road, Nanjing, 211816, China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, 350117, China
- Changzhou University, 21 Middle Gehu Road, Changzhou, 213164, China
| |
Collapse
|
3
|
Guo H, Xiang W, Fang Y, Li J, Lin Y. Molecular Bridge on Buried Interface for Efficient and Stable Perovskite Solar Cells. Angew Chem Int Ed Engl 2023; 62:e202304568. [PMID: 37363891 DOI: 10.1002/anie.202304568] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/30/2023] [Revised: 06/07/2023] [Accepted: 06/26/2023] [Indexed: 06/28/2023]
Abstract
The interface of perovskite solar cells (PSCs) is significantly important for charge transfer and device stability, while the buried interface with the impact on perovskite film growth has been paid less attention. Herein, we use a molecular modifier, glycocyamine (GDA) to build a molecular bridge on the buried interface of SnO2 /perovskite, resulting in superior interfacial contact. This is achieved through the strongly interaction between GDA and SnO2 , which also appreciably modulates the energy level. Moreover, GDA can regulate the perovskite crystal growth, yielding perovskite film with enlarged grain size and absence of pinholes, exhibiting substantially reduced defect density. Consequently, PSCs with GDA modification demonstrate significant improvement of open circuit voltage (close to 1.2 V) and fill factor, leading to an improved power conversion efficiency from 22.60 % to 24.70 %. Additionally, stabilities of GDA devices under maximum power point and 85 °C heat both perform better than the control devices.
Collapse
Affiliation(s)
- Haodan Guo
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
- CAS Key Laboratory of Photochemistry, CAS Research/Education Center for Excellence in Molecular Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Wanchun Xiang
- Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, School of Materials Science and Engineering, Shaanxi Normal University, Xi'an, 710119, China
| | - Yanyan Fang
- CAS Key Laboratory of Photochemistry, CAS Research/Education Center for Excellence in Molecular Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Jingrui Li
- School of Electronic Science and Engineering, Xi'an Jiaotong University, Xi'an, 710049, China
| | - Yuan Lin
- CAS Key Laboratory of Photochemistry, CAS Research/Education Center for Excellence in Molecular Sciences, Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
- University of Chinese Academy of Sciences, Beijing, 100049, China
| |
Collapse
|
4
|
Zhao F, Ren A, Li P, Li Y, Wu J, Wang ZM. Toward Continuous-Wave Pumped Metal Halide Perovskite Lasers: Strategies and Challenges. ACS NANO 2022; 16:7116-7143. [PMID: 35511058 DOI: 10.1021/acsnano.1c11539] [Citation(s) in RCA: 8] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Reliable and efficient continuous-wave (CW) lasers have been intensively pursued in the field of optoelectronic integrated circuits. Metal perovskites have emerged as promising gain materials for solution-processed laser diodes. Recently, the performance of CW perovskite lasers has been improved with the optimization of material and device levels. Nevertheless, the realization of CW pumped perovskite lasers is still hampered by thermal runaway, unwanted parasitic species, and poor long-term stability. This review starts with the charge carrier recombination dynamics and fundamentals of CW lasing in perovskites. We examine the potential strategies that can be used to improve the performance of perovskite CW lasers from the materials to device levels. We also propose the open challenges and future opportunities in developing high-performance and stable CW pumped perovskite lasers.
Collapse
Affiliation(s)
- Feiyun Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Aobo Ren
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Peihang Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Yan Li
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Jiang Wu
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
- State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| | - Zhiming M Wang
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610054, PR China
| |
Collapse
|
5
|
Li X, Zeng P, Ou Q, Zhang S. Fabrication of Perovskite Film-Coated Hollow Capillary Fibers Using a Fast Solvent Exchange Method. NANOMATERIALS 2021; 11:nano11061483. [PMID: 34205042 PMCID: PMC8226922 DOI: 10.3390/nano11061483] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/30/2021] [Revised: 05/25/2021] [Accepted: 05/31/2021] [Indexed: 11/17/2022]
Abstract
Metal halide perovskites have been successfully applied in a variety of fields such as LEDs, lasers and solar cells, thanks to their excellent optoelectronic properties. Capillary fibers can further expand the range of perovskite applications and at the same time improve its stability by encapsulating the perovskite inside the capillary. However, the high-quality perovskite film-coated hollow capillary fibers have yet to be realized. Here, we introduce a fast solvent exchange method which is used for the preparation of neat and smooth perovskite films deposited on the inner surface of capillary fibers. We demonstrate that this fast solvent exchange method is superior to the commonly used spontaneous diffusion-based precipitation method. The obtained hollow capillary fibers show a narrowed spectral width of 4.9 nm under pulse excitation due to the optical cavity effect. This new fabrication method can facilitate the development of perovskites in the fields of capillary lasing, microfluidic sensing, flexible LEDs and luminous fabrics.
Collapse
Affiliation(s)
- Xuesong Li
- Academy for Engineering and Technology, Fudan University, Shanghai 200433, China; (X.L.); (Q.O.)
| | - Pan Zeng
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China;
| | - Qiongrong Ou
- Academy for Engineering and Technology, Fudan University, Shanghai 200433, China; (X.L.); (Q.O.)
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China;
| | - Shuyu Zhang
- Academy for Engineering and Technology, Fudan University, Shanghai 200433, China; (X.L.); (Q.O.)
- Institute for Electric Light Sources, School of Information Science and Technology, Fudan University, Shanghai 200433, China;
- Correspondence:
| |
Collapse
|
6
|
Li Y, Qian J, Zhao D, Song R. Preparation of perovskite CsPb(Br x I 1-x ) 3 quantum dots at room temperature. RSC Adv 2021; 11:18432-18439. [PMID: 35480956 PMCID: PMC9033440 DOI: 10.1039/d1ra02772g] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/09/2021] [Accepted: 05/10/2021] [Indexed: 12/13/2022] Open
Abstract
Here, we propose a method for preparing red perovskite CsPb(BrxI1−x)3 quantum dots (QDs) at room temperature. The PL emission peak of the QDs is close to 650 nm, and the full width at half maximum reaches 61 nm. The red CsPb(BrxI1−x)3 QDs with higher water stability are obtained successfully at room temperature by adjusting the proportion of halogen elements and incorporating polystyrene. At the same time, the red QDs are combined with a blue light-emitting diode to prepare a white light-emitting device (WLED). Compared with the WLED based on the Ce-doped Yttrium Aluminum Garnet (YAG:Ce) phosphor alone, the new WLED based on QDs exhibits a reduced correlated color temperature of 2976 K, while achieving a lumen efficiency of 55.3 lm W−1, which provides a feasible solution for future research on light-emitting diodes (LEDs). Here, we propose a method for preparing red perovskite CsPb(BrxI1−x)3 quantum dots (QDs) at room temperature and successfully applied to WLEDs.![]()
Collapse
Affiliation(s)
- Ying Li
- School of Printing and Packaging, Wuhan University 129 Luoyu St. Hongshan Wuhan China
| | - Jun Qian
- School of Printing and Packaging, Wuhan University 129 Luoyu St. Hongshan Wuhan China .,Lab of Green Platemaking and Standardization for Flexographic Printing, Shanghai Publishing and Printing College Shanghai 200093 China
| | - Di Zhao
- School of Printing and Packaging, Wuhan University 129 Luoyu St. Hongshan Wuhan China
| | - Rong Song
- School of Printing and Packaging, Wuhan University 129 Luoyu St. Hongshan Wuhan China
| |
Collapse
|