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Concepción O, Søgaard NB, Bae JH, Yamamoto Y, Tiedemann AT, Ikonic Z, Capellini G, Zhao QT, Grützmacher D, Buca D. Isothermal Heteroepitaxy of Ge 1-x Sn x Structures for Electronic and Photonic Applications. ACS APPLIED ELECTRONIC MATERIALS 2023; 5:2268-2275. [PMID: 37124237 PMCID: PMC10134428 DOI: 10.1021/acsaelm.3c00112] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 01/25/2023] [Accepted: 03/21/2023] [Indexed: 05/03/2023]
Abstract
Epitaxy of semiconductor-based quantum well structures is a challenging task since it requires precise control of the deposition at the submonolayer scale. In the case of Ge1-x Sn x alloys, the growth is particularly demanding since the lattice strain and the process temperature greatly impact the composition of the epitaxial layers. In this paper, the realization of high-quality pseudomorphic Ge1-x Sn x layers with Sn content ranging from 6 at. % up to 15 at. % using isothermal processes in an industry-compatible reduced-pressure chemical vapor deposition reactor is presented. The epitaxy of Ge1-x Sn x layers has been optimized for a standard process offering a high Sn concentration at a large process window. By varying the N2 carrier gas flow, isothermal heterostructure designs suitable for quantum transport and spintronic devices are obtained.
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Affiliation(s)
- Omar Concepción
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Nicolaj B. Søgaard
- Interdisciplinary
Nanoscience Center (iNANO), Aarhus University, 8000 Aarhus C, Denmark
| | - Jin-Hee Bae
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Yuji Yamamoto
- IHP
- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
| | - Andreas T. Tiedemann
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Zoran Ikonic
- Pollard
Institute, School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United
Kingdom
| | - Giovanni Capellini
- IHP
- Leibniz Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
- Dipartimento
di Scienze, Università Roma Tre, Viale G. Marconi 446, 00146 Roma, Italy
| | - Qing-Tai Zhao
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Detlev Grützmacher
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
| | - Dan Buca
- Peter
Gruenberg Institute 9 (PGI-9), Forschungszentrum Juelich, 52428 Juelich, Germany
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Ma H, Zhu Y, Chen Y, Jiang C. Tuning spin-orbit coupling and realizing inverse persistent spin helix by an extra above-barrier radiation in a GaAs/Al 0.3Ga 0.7As heterostructure. OPTICS EXPRESS 2023; 31:14473-14481. [PMID: 37157311 DOI: 10.1364/oe.488528] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/10/2023]
Abstract
A persistent spin helix with equal strength of the Rashba and Dresselhaus spin-orbit coupling (SOC) is expected for future spintronic devices due to the suppression of spin relaxation. In this work we investigate the optical tuning of the Rashba and Dresselhaus SOC by monitoring the spin-galvanic effect (SGE) in a GaAs/Al0.3Ga0.7As two dimensional electron gas. An extra control light above the bandgap of the barrier is introduced to tune the SGE excited by a circularly polarized light below the bandgap of GaAs. We observe different tunability of the Rashba- and Dresselhaus-related SGE currents and extract the ratio of the Rashba and Dresselhaus coefficients. It decreases monotonously with the power of the control light and reaches a particular value of ∼-1, implying the formation of the inverse persistent spin helix state. By analyzing the optical tuning process phenomenologically and microscopically, we reveal greater optical tunability of the Rashba SOC than that of the Dresselhaus SOC.
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Liu CY, Tien KY, Chiu PY, Wu YJ, Chuang Y, Kao HS, Li JY. Room-Temperature Negative Differential Resistance and High Tunneling Current Density in GeSn Esaki Diodes. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2203888. [PMID: 36030362 DOI: 10.1002/adma.202203888] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 08/22/2022] [Indexed: 06/15/2023]
Abstract
Tunnel field-effect transistors (TFETs) are a promising candidate for low-power applications owing to their steep subthreshold swing of sub-60 mV per decade. For silicon- or germanium-based TFETs, the drive current is low due to the indirect band-to-band tunneling (BTBT) process. Direct-bandgap germanium-tin (GeSn) can boost the TFET performance since phonon participation is not required during the tunneling process. Esaki diodes with negative differential resistance (NDR) are used to characterize the BTBT properties and calibrate the tunneling rates for TFET applications. This work demonstrates high-performance GeSn Esaki diodes with clear NDR at room temperature with very high peak-to-valley current ratios of 15-53 from 300 K to 4 K. A record-high peak current density of 545 kA cm-2 at 4 K is also reported for the tensile-strained Ge0.925 Sn0.075 device (strain ≈0.6 %). By applying tensile stresses to n-GeSn epitaxial films, the direct BTBT process dominates, leading to high tunneling rates. Hall measurements further confirm that more electrons populate in the direct Γ valley in the tensile-strained n-GeSn epitaxial films.
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Affiliation(s)
- Chia-You Liu
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Kai-Ying Tien
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Po-Yuan Chiu
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yu-Jui Wu
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Yen Chuang
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Hsiang-Shun Kao
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
| | - Jiun-Yun Li
- Graduate Institute of Electronics Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Department of Electrical Engineering, National Taiwan University, Taipei, 10617, Taiwan
- Graduate School of Advanced Technology, National Taiwan University, Taipei, 10617, Taiwan
- Taiwan Semiconductor Research Institute, Hsinchu, 30078, Taiwan
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Peng B, Lv Z, Xu S, Pan J, Zhao W, Dong C, Huang F. Tailoring Ultrafast and High-Capacity Sodium Storage via Binding-Energy-Driven Atomic Scissors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2200863. [PMID: 35508587 DOI: 10.1002/adma.202200863] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/26/2022] [Revised: 04/23/2022] [Indexed: 06/14/2023]
Abstract
Controllably tailoring alloying anode materials to achieve fast charging and enhanced structural stability is crucial for sodium-ion batteries with high rate and high capacity performance, yet remains a significant challenge owing to the huge volume change and sluggish sodiation kinetics. Here, a chemical tailoring tool is proposed and developed by atomically dispersing high-capacity Ge metal into the rigid and conductive sulfide framework for controllable reconstruction of GeS bonds to synergistically realize high capacity and high rate performance for sodium storage. The integrated GeTiS3 material with stable Ti-S framework and weak GeS bonding delivers high specific capacities of 678 mA h g-1 at 0.3 C over 100 cycles and 209 mA h g-1 at 32 C over 10 000 cycles, outperforming most of the reported alloying type anode materials for sodium storage. Interestingly, in situ Raman, X-ray diffraction (XRD), and ex situ transmission electron microscopy (TEM) characterizations reveal the formation of well-dispersed Nax Ge confined in the rigid Ti-S matrix with suppressed volume change after discharge. The synergistically coupled alloying-conversion and surface-dominated redox reactions with enhanced capacitive contribution and high reaction reversibility by a binding-energy-driven atomic scissors method would break new ground on designing a high-rate and high-capacity sodium-ion batteries.
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Affiliation(s)
- Baixin Peng
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Zhuoran Lv
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Shumao Xu
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Jun Pan
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Wei Zhao
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
| | - Chenlong Dong
- Tianjin Key Laboratory for Photoelectric Materials and Devices, School of Materials Science and Engineering, Tianjin University of Technology, Tianjin, 300384, P. R. China
| | - Fuqiang Huang
- State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China
- Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China
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Assali S, Attiaoui A, Vecchio PD, Mukherjee S, Nicolas J, Moutanabbir O. A Light-Hole Germanium Quantum Well on Silicon. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2201192. [PMID: 35510856 DOI: 10.1002/adma.202201192] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/05/2022] [Revised: 04/06/2022] [Indexed: 06/14/2023]
Abstract
The quiet quantum environment of holes in solid-state devices is at the core of increasingly reliable architectures for quantum processors and memories. However, due to the lack of scalable materials to properly tailor the valence band character and its energy offsets, the precise engineering of light-hole (LH) states remains a serious obstacle toward coherent optical photon-spin interfaces needed for a direct mapping of the quantum information encoded in photon flying qubits to stationary spin processors. Herein, to alleviate this long-standing limitation, an all-group-IV low-dimensional system is demonstrated, consisting of a highly tensile strained germanium quantum well grown on silicon allowing new degrees of freedom to control and manipulate the hole states. Wafer-level, high bi-isotropic in-plane tensile strain (<1%) is achieved using strain-engineered, metastable germanium-tin alloyed buffer layers yielding quantum wells with LH ground state, high g-factor anisotropy, and a tunable splitting of the hole sub-bands. The epitaxial heterostructures display sharp interfaces with sub-nanometer broadening and show room-temperature excitonic transitions that are modulated and extended to the mid-wave infrared by controlling strain and thickness. This ability to engineer quantum structures with LH selective confinement and controllable optical response enables manufacturable silicon-compatible platforms relevant to integrated quantum communication and sensing technologies.
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Affiliation(s)
- Simone Assali
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Anis Attiaoui
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Patrick Del Vecchio
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Samik Mukherjee
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Jérôme Nicolas
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
| | - Oussama Moutanabbir
- Department of Engineering Physics, École Polytechnique de Montréal, C.P. 6079, Succursale Centre-Ville, Montréal, Québec, H3C 3A7, Canada
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Miao Y, Wang G, Kong Z, Xu B, Zhao X, Luo X, Lin H, Dong Y, Lu B, Dong L, Zhou J, Liu J, Radamson HH. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications. NANOMATERIALS 2021; 11:nano11102556. [PMID: 34684996 PMCID: PMC8539235 DOI: 10.3390/nano11102556] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 09/22/2021] [Accepted: 09/22/2021] [Indexed: 11/24/2022]
Abstract
GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Yuanhao Miao
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Correspondence: (Y.M.); (H.H.R.); Tel.: +86-010-8299-5793 (H.H.R.)
| | - Guilei Wang
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhenzhen Kong
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Buqing Xu
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xuewei Zhao
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xue Luo
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
| | - Hongxiao Lin
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
| | - Yan Dong
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
| | - Bin Lu
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
| | - Linpeng Dong
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Shaanxi Province Key Laboratory of Thin Films Technology Optical Test, Xi’an Technological University, Xi’an 710032, China
| | - Jiuren Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
| | - Jinbiao Liu
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
| | - Henry H. Radamson
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
- Correspondence: (Y.M.); (H.H.R.); Tel.: +86-010-8299-5793 (H.H.R.)
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