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Steuer O, Liedke MO, Butterling M, Schwarz D, Schulze J, Li Z, Wagner A, Fischer IA, Hübner R, Zhou S, Helm M, Cuniberti G, Georgiev YM, Prucnal S. Evolution of point defects in pulsed-laser-melted Ge 1-xSn xprobed by positron annihilation lifetime spectroscopy. J Phys Condens Matter 2023; 36:085701. [PMID: 37931296 DOI: 10.1088/1361-648x/ad0a10] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/21/2023] [Accepted: 11/06/2023] [Indexed: 11/08/2023]
Abstract
Direct-band-gap Germanium-Tin alloys (Ge1-xSnx) with high carrier mobilities are promising materials for nano- and optoelectronics. The concentration of open volume defects in the alloy, such as Sn and Ge vacancies, influences the final device performance. In this article, we present an evaluation of the point defects in molecular-beam-epitaxy grown Ge1-xSnxfilms treated by post-growth nanosecond-range pulsed laser melting (PLM). Doppler broadening - variable energy positron annihilation spectroscopy and variable energy positron annihilation lifetime spectroscopy are used to investigate the defect nanostructure in the Ge1-xSnxfilms exposed to increasing laser energy density. The experimental results, supported with ATomic SUPerposition calculations, evidence that after PLM, the average size of the open volume defects increases, which represents a raise in concentration of vacancy agglomerations, but the overall defect density is reduced as a function of the PLM fluence. At the same time, the positron annihilation spectroscopy analysis provides information about dislocations and Ge vacancies decorated by Sn atoms. Moreover, it is shown that the PLM reduces the strain in the layer, while dislocations are responsible for trapping of Sn and formation of small Sn-rich-clusters.
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Affiliation(s)
- O Steuer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Institute of Materials Science, Technische Universität Dresden, Budapester Str. 27, 01069 Dresden, Germany
| | - M O Liedke
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - M Butterling
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - D Schwarz
- University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany
| | - J Schulze
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, 91058 Erlangen, Germany
| | - Z Li
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - A Wagner
- Institute of Radiation Physics, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - I A Fischer
- Experimental Physics and Functional Materials, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany
| | - R Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - S Zhou
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - M Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Center for Advancing Electronics Dresden, Technische Universität Dresden, Helmholtzstraße 18, 01062 Dresden, Germany
| | - G Cuniberti
- Institute of Materials Science, Technische Universität Dresden, Budapester Str. 27, 01069 Dresden, Germany
| | - Y M Georgiev
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Institute of Electronics, Bulgarian Academy of Sciences, 72, Tsarigradsko Chausse Blvd., 1784 Sofia, Bulgaria
| | - S Prucnal
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
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Kim Y, Joo HJ, Chen M, Son B, Burt D, Shi X, Zhang L, Ikonic Z, Tan CS, Nam D. High-Precision Wavelength Tuning of GeSn Nanobeam Lasers via Dynamically Controlled Strain Engineering. Adv Sci (Weinh) 2023:e2207611. [PMID: 37072675 DOI: 10.1002/advs.202207611] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2022] [Revised: 03/09/2023] [Indexed: 05/03/2023]
Abstract
The technology to develop a large number of identical coherent light sources on an integrated photonics platform holds the key to the realization of scalable optical and quantum photonic circuits. Herein, a scalable technique is presented to produce identical on-chip lasers by dynamically controlled strain engineering. By using localized laser annealing that can control the strain in the laser gain medium, the emission wavelengths of several GeSn one-dimensional photonic crystal nanobeam lasers are precisely matched whose initial emission wavelengths are significantly varied. The method changes the GeSn crystal structure in a region far away from the gain medium by inducing Sn segregation in a dynamically controllable manner, enabling the emission wavelength tuning of more than 10 nm without degrading the laser emission properties such as intensity and linewidth. The authors believe that the work presents a new possibility to scale up the number of identical light sources for the realization of large-scale photonic-integrated circuits.
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Affiliation(s)
- Youngmin Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Hyo-Jun Joo
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Melvina Chen
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Bongkwon Son
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Daniel Burt
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Xuncheng Shi
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Lin Zhang
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Zoran Ikonic
- School of Electronic and Electrical Engineering, University of Leeds, Leeds, LS2 9JT, UK
| | - Chuan Seng Tan
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Donguk Nam
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
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3
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Steuer O, Schwarz D, Oehme M, Schulze J, Mączko H, Kudrawiec R, Fischer IA, Heller R, Hübner R, Khan MM, Georgiev YM, Zhou S, Helm M, Prucnal S. Band-gap and strain engineering in GeSn alloys using post-growth pulsed laser melting. J Phys Condens Matter 2022; 35:055302. [PMID: 36395508 DOI: 10.1088/1361-648x/aca3ea] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/27/2022] [Accepted: 11/17/2022] [Indexed: 06/16/2023]
Abstract
The pseudomorphic growth of Ge1-xSnxon Ge causes in-plane compressive strain, which degrades the superior properties of the Ge1-xSnxalloys. Therefore, efficient strain engineering is required. In this article, we present strain and band-gap engineering in Ge1-xSnxalloys grown on Ge a virtual substrate using post-growth nanosecond pulsed laser melting (PLM). Micro-Raman and x-ray diffraction (XRD) show that the initial in-plane compressive strain is removed. Moreover, for PLM energy densities higher than 0.5 J cm-2, the Ge0.89Sn0.11layer becomes tensile strained. Simultaneously, as revealed by Rutherford Backscattering spectrometry, cross-sectional transmission electron microscopy investigations and XRD the crystalline quality and Sn-distribution in PLM-treated Ge0.89Sn0.11layers are only slightly affected. Additionally, the change of the band structure after PLM is confirmed by low-temperature photoreflectance measurements. The presented results prove that post-growth ns-range PLM is an effective way for band-gap and strain engineering in highly-mismatched alloys.
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Affiliation(s)
- O Steuer
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - D Schwarz
- University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany
| | - M Oehme
- University of Stuttgart, Institute of Semiconductor Engineering, 70569 Stuttgart, Germany
| | - J Schulze
- Fraunhofer Institute for Integrated Systems and Device Technology IISB, 91058 Erlangen, Germany
| | - H Mączko
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - R Kudrawiec
- Department of Semiconductor Materials Engineering, Faculty of Fundamental Problems of Technology, Wroclaw University of Science and Technology, Wybrzeże Wyspiańskiego 27, 50-370 Wrocław, Poland
| | - I A Fischer
- Experimental Physics and Functional Materials, Brandenburgische Technische Universität Cottbus-Senftenberg, 03046 Cottbus, Germany
| | - R Heller
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - R Hübner
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - M M Khan
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - Y M Georgiev
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
- Institute of Electronics, Bulgarian Academy of Sciences, 72, Tsarigradsko Chausse Blvd, 1784 Sofia, Bulgaria
| | - S Zhou
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - M Helm
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
| | - S Prucnal
- Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, Bautzner Landstrasse 400, 01328 Dresden, Germany
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Chang C, Cheng HH, Sevison GA, Hendrickson JR, Li Z, Agha I, Mathews J, Soref RA, Sun G. Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density. Materials (Basel) 2022; 15:989. [PMID: 35160939 DOI: 10.3390/ma15030989] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/07/2021] [Revised: 01/24/2022] [Accepted: 01/25/2022] [Indexed: 01/27/2023]
Abstract
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.
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Yen TJ, Chin A, Chan WK, Chen HYT, Gritsenko V. Remarkably High-Performance Nanosheet GeSn Thin-Film Transistor. Nanomaterials (Basel) 2022; 12:261. [PMID: 35055277 PMCID: PMC8777649 DOI: 10.3390/nano12020261] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/13/2021] [Revised: 01/07/2022] [Accepted: 01/10/2022] [Indexed: 12/10/2022]
Abstract
High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.
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Affiliation(s)
- Te Jui Yen
- Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan;
| | - Albert Chin
- Department of Electronics Engineering, National Yang Ming Chiao Tung University, Hsinchu 300, Taiwan;
| | - Weng Kent Chan
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan; (W.K.C.); (H.-Y.T.C.)
| | - Hsin-Yi Tiffany Chen
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan; (W.K.C.); (H.-Y.T.C.)
| | - Vladimir Gritsenko
- Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, 630090 Novosibirsk, Russia;
- Novosibirsk State University, 2 Pirogov Street, 630090 Novosibirsk, Russia
- Novosibirsk State Technical University, 20 Marks Avenue, 630073 Novosibirsk, Russia
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An S, Liao Y, Kim M. Flexible Titanium Nitride/Germanium-Tin Photodetectors Based on Sub-Bandgap Absorption. ACS Appl Mater Interfaces 2021; 13:61396-61403. [PMID: 34851080 DOI: 10.1021/acsami.1c15181] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
We report an enhanced performance of flexible titanium nitride/germanium-tin (TiN/GeSn) photodetectors (PDs) with an extended photodetection range based on sub-bandgap absorption. Single-crystalline GeSn membranes transfer-printed on poly(ethylene terephthalate) are integrated with plasmonic TiN to form a TiN/GeSn heterojunction. Formation of the heterojunction creates a Schottky contact between the TiN and GeSn. A Schottky barrier height of 0.49 eV extends the photodetection wavelength to 2530 nm and further enhances the light absorption capability within the detection range. In addition, finite-difference time-domain simulation proves that the integration of TiN and GeSn could enhance average absorption from 0.13 to 0.33 in the near-infrared (NIR) region (e.g., 1400-2000 nm) and more than 70% of light is absorbed in TiN. The responsivity of the fabricated TiN/GeSn PDs is increased from 30 to 148.5 mA W-1 at 1550 nm. There is also an ∼180 nm extension in the optical absorption wavelength of the flexible TiN/GeSn PD. The enhanced performance of the device is attributed to the absorption and separation of plasmonic hot carriers via TiN and the TiN/GeSn junction, respectively. The effect of external uniaxial strain is also investigated. A tensile strain of 0.3% could further increase the responsivity from 148.5 to 218 mA W-1, while it is decreased to 102 mA W-1 by 0.25% compressive strain. In addition, the devices maintain stable performance after multiple and long bending cycles. Our results provide a robust and cost-effective method to extend the NIR photodetection capability of flexible group IV PDs.
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Affiliation(s)
- Shu An
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
| | - Yikai Liao
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
| | - Munho Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, 639798 Singapore, Singapore
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Grant J, Abernathy G, Olorunsola O, Ojo S, Amoah S, Wanglia E, Saha SK, Sabbar A, Du W, Alher M, Li BH, Yu SQ. Growth of Pseudomorphic GeSn at Low Pressure with Sn Composition of 16.7. Materials (Basel) 2021; 14:ma14247637. [PMID: 34947234 PMCID: PMC8705099 DOI: 10.3390/ma14247637] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/30/2021] [Revised: 11/30/2021] [Accepted: 12/08/2021] [Indexed: 11/16/2022]
Abstract
Group-IV alloy GeSn holds great promise for the high-performance optoelectronic devices that can be monolithically integrated on Si for near- and mid-infrared applications. Growth of GeSn using chemical vapor deposition technique with various Sn and Ge precursors has been investigated worldwide. To achieve relatively high Sn incorporation, the use of higher pressure and/or higher order Ge hydrides precursors were reported. In this work, we successfully demonstrated the growth of high-quality GeSn with Sn composition of 16.7% at low pressure of 12 Torr. The alloy was grown using the commercially available GeH4 and SnCl4 precursors via a chemical vapor deposition reactor. Material and optical characterizations were performed to confirm the Sn incorporation and to study the optical properties. The demonstrated growth results reveal a low-pressure growth window to achieve high-quality and high Sn alloys for future device applications.
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Affiliation(s)
- Joshua Grant
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
| | - Grey Abernathy
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
- Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
| | - Oluwatobi Olorunsola
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
- Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
| | - Solomon Ojo
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
- Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
| | - Sylvester Amoah
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
| | - Emmanuel Wanglia
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
- Microelectronics-Photonics Program, University of Arkansas, Fayetteville, AR 72701, USA
| | - Samir K. Saha
- Department of Physics, University of Arkansas, Fayetteville, AR 72701, USA;
| | - Abbas Sabbar
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
| | - Wei Du
- Department of Electrical Engineering and Physics, Wilkes University, Wilkes-Barre, PA 18766, USA;
| | - Murtadha Alher
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
- Mechanical Engineering Department, University of Kerbala, Kerbala 56001, Iraq
| | - Bao-Hua Li
- Arktonics, LLC, 1339 South Pinnacle Drive, Fayetteville, AR 72701, USA;
| | - Shui-Qing Yu
- Department of Electrical Engineering, University of Arkansas, Fayetteville, AR 72701, USA; (J.G.); (G.A.); (O.O.); (S.O.); (S.A.); (E.W.); (A.S.); (M.A.)
- Institute for Nanoscience and Engineering, University of Arkansas, Fayetteville, AR 72701, USA
- Correspondence:
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Miao Y, Wang G, Kong Z, Xu B, Zhao X, Luo X, Lin H, Dong Y, Lu B, Dong L, Zhou J, Liu J, Radamson HH. Review of Si-Based GeSn CVD Growth and Optoelectronic Applications. Nanomaterials (Basel) 2021; 11:nano11102556. [PMID: 34684996 PMCID: PMC8539235 DOI: 10.3390/nano11102556] [Citation(s) in RCA: 13] [Impact Index Per Article: 4.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 08/06/2021] [Revised: 09/22/2021] [Accepted: 09/22/2021] [Indexed: 11/24/2022]
Abstract
GeSn alloys have already attracted extensive attention due to their excellent properties and wide-ranging electronic and optoelectronic applications. Both theoretical and experimental results have shown that direct bandgap GeSn alloys are preferable for Si-based, high-efficiency light source applications. For the abovementioned purposes, molecular beam epitaxy (MBE), physical vapour deposition (PVD), and chemical vapor deposition (CVD) technologies have been extensively explored to grow high-quality GeSn alloys. However, CVD is the dominant growth method in the industry, and it is therefore more easily transferred. This review is focused on the recent progress in GeSn CVD growth (including ion implantation, in situ doping technology, and ohmic contacts), GeSn detectors, GeSn lasers, and GeSn transistors. These review results will provide huge advancements for the research and development of high-performance electronic and optoelectronic devices.
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Affiliation(s)
- Yuanhao Miao
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Correspondence: (Y.M.); (H.H.R.); Tel.: +86-010-8299-5793 (H.H.R.)
| | - Guilei Wang
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Zhenzhen Kong
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Buqing Xu
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xuewei Zhao
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
| | - Xue Luo
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
| | - Hongxiao Lin
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
| | - Yan Dong
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
| | - Bin Lu
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- School of Physics and Information Engineering, Shanxi Normal University, Linfen 041004, China
| | - Linpeng Dong
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Shaanxi Province Key Laboratory of Thin Films Technology Optical Test, Xi’an Technological University, Xi’an 710032, China
| | - Jiuren Zhou
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore;
| | - Jinbiao Liu
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
| | - Henry H. Radamson
- Key Laboratory of Microelectronic Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; (G.W.); (Z.K.); (B.X.); (X.Z.); (Y.D.); (J.L.)
- Research and Development Center of Optoelectronic Hybrid IC, Guangdong Greater Bay Area Institute of Integrated Circuit and System, Guangzhou 510535, China; (X.L.); (H.L.); (B.L.); (L.D.)
- Institute of Microelectronics, University of Chinese Academy of Sciences, Beijing 100049, China
- Correspondence: (Y.M.); (H.H.R.); Tel.: +86-010-8299-5793 (H.H.R.)
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Kang Y, Xu S, Han K, Kong EYJ, Song Z, Luo S, Kumar A, Wang C, Fan W, Liang G, Gong X. Ge 0.95Sn 0.05 Gate-All-Around p-Channel Metal-Oxide-Semiconductor Field-Effect Transistors with Sub-3 nm Nanowire Width. Nano Lett 2021; 21:5555-5563. [PMID: 34105972 DOI: 10.1021/acs.nanolett.1c00934] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
We demonstrate Ge0.95Sn0.05 p-channel gate-all-around field-effect transistors (p-GAAFETs) with sub-3 nm nanowire width (WNW) on a GeSn-on-insulator (GeSnOI) substrate using a top-down fabrication process. Thanks to the excellent gate control by employing an aggressively scaled nanowire structure, Ge0.95Sn0.05 p-GAAFETs exhibit a small subthreshold swing (SS) of 66 mV/decade, a decent on-current/off-current (ION/IOFF) ratio of ∼1.2 × 106, and a high-field effective hole mobility (μeff) of ∼115 cm2/(V s). In addition, we also investigate quantum confinement effects in extremely scaled GeSn nanowires, including threshold voltage (VTH) shift and IOFF reduction with continuous scaling of WNW under 10 nm. The phenomena observed from experimental results are substantiated by the calculation of GeSn bandgap and TCAD simulation of electrical characteristics of devices with sub-10 nm WNW. This study suggests Ge-based nanowire p-FETs with extremely scaled dimension hold promise to deliver good performance to enable further scaling for future technology nodes.
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Affiliation(s)
- Yuye Kang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Shengqiang Xu
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Kaizhen Han
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Eugene Y-J Kong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Zhigang Song
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, People's Republic of China
| | - Sheng Luo
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Annie Kumar
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Chengkuan Wang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Weijun Fan
- School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Gengchiau Liang
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
| | - Xiao Gong
- Department of Electrical and Computer Engineering, National University of Singapore, Singapore 117576, Singapore
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10
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An S, Tai YC, Lee KC, Shin SH, Cheng HH, Chang GE, Kim M. Raman scattering study of GeSn under 〈1 0 0〉 and 〈1 1 0〉 uniaxial stress. Nanotechnology 2021; 32:355704. [PMID: 34020429 DOI: 10.1088/1361-6528/ac03d7] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/17/2021] [Accepted: 05/20/2021] [Indexed: 06/12/2023]
Abstract
The application of strain into GeSn alloys can effectively modulate the band structures, thus creating novel electronic and photonic devices. Raman spectroscopy is a powerful tool for characterizing strain; however, the lack of Raman coefficient makes it difficult for accurate determination of strain in GeSn alloys. Here, we have investigated the Raman-strain function of Ge1-xSnxalong 〈1 0 0〉 and 〈1 1 0〉 directions. GeSn nanomembranes (NMs) with different Sn compositions are transfer-printed on polyethylene terephthalate substrates. External strain is introduced by bending fixtures with different radii, leading to uniaxial tensile strain up to 0.44%. Strain analysis of flexible GeSn NMs bent along 〈1 0 0〉 and 〈1 1 0〉 directions are performed by Raman spectroscopy. The linear coefficients of Raman-strain for Ge0.96Sn0.04are measured to be -1.81 and -2.60 cm-1, while those of Ge0.94Sn0.06are decreased to be -2.69 and -3.82 cm-1along 〈1 0 0〉 and 〈1 1 0〉 directions, respectively. As a result, the experimental ratio of linear coefficient (ROLC) of Ge, Ge0.96Sn0.04and Ge0.94Sn0.06are 1.34, 1.44 and 1.42, which agree well with theoretical ROLC values calculated by elastic compliances and phonon deformation potentials (PDPs). In addition, the compositional dependence of PDPs is analyzed qualitatively. These fundamental parameters are important in designing high performance strained GeSn electronic and photonic devices.
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Affiliation(s)
- Shu An
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Yeh-Chen Tai
- Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi 62102, Taiwan
| | - Kuo-Chih Lee
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Sang-Ho Shin
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - H H Cheng
- Center for Condensed Matter Sciences, National Taiwan University, Taipei 10617, Taiwan
| | - Guo-En Chang
- Department of Mechanical Engineering, and Advanced Institute of Manufacturing with High-Tech Innovations (AIM-HI), National Chung Cheng University, Chiayi 62102, Taiwan
| | - Munho Kim
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
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11
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Peng HK, Huang YK, Chou CP, Wu YH. Recognizing Spatiotemporal Features by a Neuromorphic Network with Highly Reliable Ferroelectric Capacitors on Epitaxial GeSn Film. ACS Appl Mater Interfaces 2021; 13:26630-26638. [PMID: 34038096 DOI: 10.1021/acsami.1c05815] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Epitaxial GeSn (epi-GeSn) shows the capability to form ferroelectric capacitors (FeCAPs) with a higher remanent polarization (Pr) than epi-Ge. With the interface engineering by a high-k AlON, the reliability of the epi-GeSn-based FeCAPs is enhanced. Using the highly reliable FeCAP in series with a resistor as the synapse and axon, a simplified neuromorphic network based on a differentiator circuit is proposed. The network not only holds the leaky integrate-and-fire (LIF) function but is also capable of recognizing the spatiotemporal features, which sets it apart from other LIF neurons arising from the FeCAP-modulated leaky behavior of the potential on the axon by spiking-time-dependent plasticity. Furthermore, it is more energy efficient to operate, nondestructive to read, and simpler to fabricate by employing FeCAPs, making it eligible for emergent spiking neural network hardware accelerators.
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Affiliation(s)
- Hao-Kai Peng
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yu-Kai Huang
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Chuan-Pu Chou
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yung-Hsien Wu
- Department of Engineering and System Science, National Tsing Hua University, Hsinchu 30013, Taiwan
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12
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Zhang L, Song Y, von den Driesch N, Zhang Z, Buca D, Grützmacher D, Wang S. Structural Property Study for GeSn Thin Films. Materials (Basel) 2020; 13:E3645. [PMID: 32824570 DOI: 10.3390/ma13163645] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 07/21/2020] [Revised: 08/08/2020] [Accepted: 08/12/2020] [Indexed: 11/17/2022]
Abstract
The structural properties of GeSn thin films with different Sn concentrations and thicknesses grown on Ge (001) by molecular beam epitaxy (MBE) and on Ge-buffered Si (001) wafers by chemical vapor deposition (CVD) were analyzed through high resolution X-ray diffraction and cross-sectional transmission electron microscopy. Two-dimensional reciprocal space maps around the asymmetric (224) reflection were collected by X-ray diffraction for both the whole structures and the GeSn epilayers. The broadenings of the features of the GeSn epilayers with different relaxations in the ω direction, along the ω-2θ direction and parallel to the surface were investigated. The dislocations were identified by transmission electron microscopy. Threading dislocations were found in MBE grown GeSn layers, but not in the CVD grown ones. The point defects and dislocations were two possible reasons for the poor optical properties in the GeSn alloys grown by MBE.
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13
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Quintero A, Gergaud P, Hartmann JM, Delaye V, Reboud V, Cassan E, Rodriguez P. Impact and behavior of Sn during the Ni/ GeSn solid-state reaction. J Appl Crystallogr 2020; 53:605-613. [PMID: 32684875 PMCID: PMC7312141 DOI: 10.1107/s1600576720003064] [Citation(s) in RCA: 8] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 12/11/2019] [Accepted: 03/04/2020] [Indexed: 11/10/2022] Open
Abstract
Ni-based intermetallics are promising materials for forming efficient contacts in GeSn-based Si photonic devices. However, the role that Sn might have during the Ni/GeSn solid-state reaction (SSR) is not fully understood. A comprehensive analysis focused on Sn segregation during the Ni/GeSn SSR was carried out. In situ X-ray diffraction and cross-section transmission electron microscopy measurements coupled with energy-dispersive X-ray spectrometry and electron energy-loss spectroscopy atomic mappings were performed to follow the phase sequence, Sn distribution and segregation. The results showed that, during the SSR, Sn was incorporated into the intermetallic phases. Sn segregation happened first around the grain boundaries (GBs) and then towards the surface. Sn accumulation around GBs hampered atom diffusion, delaying the growth of the Ni(GeSn) phase. Higher thermal budgets will thus be mandatory for formation of contacts in high-Sn-content photonic devices, which could be detrimental for thermal stability.
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Affiliation(s)
- Andrea Quintero
- Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
| | | | | | - Vincent Delaye
- Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
| | - Vincent Reboud
- Univ. Grenoble Alpes, CEA, LETI, F-38000 Grenoble, France
| | - Eric Cassan
- Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, 91120, Palaiseau, France
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Baira M, Salem B, Ahamad Madhar N, Ilahi B. Intersubband Optical Nonlinearity of GeSn Quantum Dots under Vertical Electric Field. Micromachines (Basel) 2019; 10:mi10040243. [PMID: 31013735 PMCID: PMC6523723 DOI: 10.3390/mi10040243] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 03/24/2019] [Revised: 04/07/2019] [Accepted: 04/10/2019] [Indexed: 12/03/2022]
Abstract
The impact of vertical electrical field on the electron related linear and 3rd order nonlinear optical properties are evaluated numerically for pyramidal GeSn quantum dots with different sizes. The electric field induced electron confining potential profile’s modification is found to alter the transition energies and the transition dipole moment, particularly for larger dot sizes. These variations strongly influence the intersubband photoabsorption coefficients and changes in the refractive index with an increasing tendency of the 3rd order nonlinear component with increasing both quantum dot (QD) size and applied electric field. The results show that intersubband optical properties of GeSn quantum dots can be successively tuned by external polarization.
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Affiliation(s)
- Mourad Baira
- Micro-Optoelectronic and Nanostructures Laboratory, Faculty of Sciences, University of Monastir, Monastir 5019, Tunisia.
| | - Bassem Salem
- Univ. Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, F-38000 Grenoble, France.
| | - Niyaz Ahamad Madhar
- Department of Physics and Astronomy, College of Sciences, King Saud University, Riyadh 11451, Saudi Arabia.
| | - Bouraoui Ilahi
- Department of Physics and Astronomy, College of Sciences, King Saud University, Riyadh 11451, Saudi Arabia.
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15
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Baira M, Salem B, Madhar NA, Ilahi B. Linear and Nonlinear Intersubband Optical Properties of Direct Band Gap GeSn Quantum Dots. Nanomaterials (Basel) 2019; 9:E124. [PMID: 30669458 DOI: 10.3390/nano9010124] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/02/2019] [Revised: 01/11/2019] [Accepted: 01/15/2019] [Indexed: 12/02/2022]
Abstract
Intersubband optical transitions, refractive index changes, and absorption coefficients are numerically driven for direct bandgap strained GeSn/Ge quantum dots. The linear, third-order nonlinear and total, absorption coefficients and refractive index changes are evaluated over useful dot sizes’ range ensuring p-like Γ-electron energy state to be lower than s-like L-electron energy state. The results show strong dependence of the total absorption coefficient and refractive index changes on the quantum dot sizes. The third order nonlinear contribution is found to be sensitive to the incident light intensity affecting both total absorption coefficient and refractive index changes, especially for larger dot sizes.
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16
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Al-Saigh R, Baira M, Salem B, Ilahi B. Design of Strain-Engineered GeSn/GeSiSn Quantum Dots for Mid-IR Direct Bandgap Emission on Si Substrate. Nanoscale Res Lett 2018; 13:172. [PMID: 29882031 PMCID: PMC5991110 DOI: 10.1186/s11671-018-2587-1] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/18/2018] [Accepted: 05/29/2018] [Indexed: 06/01/2023]
Abstract
Strain-engineered self-assembled GeSn/GeSiSn quantum dots in Ge matrix have been numerically investigated aiming to study their potentiality towards direct bandgap emission in the mid-IR range. The use of GeSiSn alloy as surrounding media for GeSn quantum dots (QD) allows adjusting the strain around the QD through the variation of Si and/or Sn composition. Accordingly, the lattice mismatch between the GeSn quantum dots and the GeSiSn surrounding layer has been tuned between - 2.3 and - 4.5% through the variation of the Sn barrier composition for different dome-shaped QD sizes. The obtained results show that the emission wavelength, fulfilling the specific QD directness criteria, can be successively tuned over a broad mid-IR range from 3 up to7 μm opening new perspectives for group IV laser sources fully integrated in Si photonic systems for sensing applications.
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Affiliation(s)
- Reem Al-Saigh
- King Saud University Department of Physics and Astronomy, College of Sciences, Riyadh, 11451 Saudi Arabia
| | - Mourad Baira
- University of Monastir Faculty of Sciences, Laboratory of Micro-Optoelectronic and Nanostructures, 5019 Monastir, Tunisia
| | - Bassem Salem
- Univ. de Grenoble Alpes, CNRS, CEA/LETI Minatec, LTM, F-38000 Grenoble, France
| | - Bouraoui Ilahi
- King Saud University Department of Physics and Astronomy, College of Sciences, Riyadh, 11451 Saudi Arabia
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17
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von den Driesch N, Stange D, Rainko D, Povstugar I, Zaumseil P, Capellini G, Schröder T, Denneulin T, Ikonic Z, Hartmann J, Sigg H, Mantl S, Grützmacher D, Buca D. Advanced GeSn/SiGeSn Group IV Heterostructure Lasers. Adv Sci (Weinh) 2018; 5:1700955. [PMID: 29938172 PMCID: PMC6010800 DOI: 10.1002/advs.201700955] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2017] [Revised: 02/25/2018] [Indexed: 05/05/2023]
Abstract
Growth and characterization of advanced group IV semiconductor materials with CMOS-compatible applications are demonstrated, both in photonics. The investigated GeSn/SiGeSn heterostructures combine direct bandgap GeSn active layers with indirect gap ternary SiGeSn claddings, a design proven its worth already decades ago in the III-V material system. Different types of double heterostructures and multi-quantum wells (MQWs) are epitaxially grown with varying well thicknesses and barriers. The retaining high material quality of those complex structures is probed by advanced characterization methods, such as atom probe tomography and dark-field electron holography to extract composition parameters and strain, used further for band structure calculations. Special emphasis is put on the impact of carrier confinement and quantization effects, evaluated by photoluminescence and validated by theoretical calculations. As shown, particularly MQW heterostructures promise the highest potential for efficient next generation complementary metal-oxide-semiconductor (CMOS)-compatible group IV lasers.
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Affiliation(s)
- Nils von den Driesch
- Peter Grünberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies (JARA‐FIT)Forschungszentrum Jülich52425JülichGermany
| | - Daniela Stange
- Peter Grünberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies (JARA‐FIT)Forschungszentrum Jülich52425JülichGermany
| | - Denis Rainko
- Peter Grünberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies (JARA‐FIT)Forschungszentrum Jülich52425JülichGermany
| | - Ivan Povstugar
- Central Institute for Engineering, Electronics and AnalyticsForschungszentrum Jülich52425JülichGermany
| | | | - Giovanni Capellini
- IHP15236Frankfurt (Oder)Germany
- Department of SciencesUniversità Roma Tre00154RomeItaly
| | | | - Thibaud Denneulin
- CEMESCNRS31055ToulouseFrance
- Ernst Ruska‐Centre for Microscopy and Spectroscopy with Electrons and Peter Grünberg Institute 5 (PGI‐5)Forschungszentrum Jülich52425JülichGermany
| | - Zoran Ikonic
- Institute of Microwaves and PhotonicsSchool of Electronic and Electrical EngineeringUniversity of LeedsLeedsLS2 9JTUK
| | - Jean‐Michel Hartmann
- CEALETIMINATEC CampusF‐38054GrenobleFrance
- Université Grenoble AlpesF‐38000GrenobleFrance
| | - Hans Sigg
- Laboratory for Micro‐ and Nanotechnology (LMN)Paul Scherrer InstituteCH‐5232VilligenSwitzerland
| | - Siegfried Mantl
- Peter Grünberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies (JARA‐FIT)Forschungszentrum Jülich52425JülichGermany
| | - Detlev Grützmacher
- Peter Grünberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies (JARA‐FIT)Forschungszentrum Jülich52425JülichGermany
| | - Dan Buca
- Peter Grünberg Institute 9 (PGI‐9) and JARA‐Fundamentals of Future Information Technologies (JARA‐FIT)Forschungszentrum Jülich52425JülichGermany
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18
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Schulte-Braucks C, Narimani K, Glass S, von den Driesch N, Hartmann JM, Ikonic Z, Afanas'ev VV, Zhao QT, Mantl S, Buca D. Correlation of Bandgap Reduction with Inversion Response in (Si) GeSn/High-k/Metal Stacks. ACS Appl Mater Interfaces 2017; 9:9102-9109. [PMID: 28221764 DOI: 10.1021/acsami.6b15279] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2023]
Abstract
The bandgap tunability of (Si)GeSn group IV semiconductors opens a new era in Si-technology. Depending on the Si/Sn contents, direct and indirect bandgaps in the range of 0.4-0.8 eV can be obtained, offering a broad spectrum of both photonic and low power electronic applications. In this work, we systematically studied capacitance-voltage characteristics of high-k/metal gate stacks formed on GeSn and SiGeSn alloys with Sn-contents ranging from 0 to 14 at. % and Si-contents from 0 to 10 at. % particularly focusing on the minority carrier inversion response. A clear correlation between the Sn-induced shrinkage of the bandgap energy and enhanced minority carrier response was confirmed using temperature and frequency dependent capacitance voltage-measurements, in good agreement with k.p theory predictions and photoluminescence measurements of the analyzed epilayers as reported earlier. The enhanced minority generation rate for higher Sn-contents can be firmly linked to the bandgap reduction in the GeSn epilayer without significant influence of substrate/interface effects. It thus offers a unique possibility to analyze intrinsic defects in (Si)GeSn epilayers. The extracted dominant defect level for minority carrier inversion lies approximately 0.4 eV above the valence band edge in the studied Sn-content range (0-12.5 at. %). This finding is of critical importance since it shows that the presence of Sn by itself does not impair the minority carrier lifetime. Therefore, the continuous improvement of (Si)GeSn material quality should yield longer nonradiative recombination times which are required for the fabrication of efficient light detectors and to obtain room temperature lasing action.
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Affiliation(s)
- C Schulte-Braucks
- Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany
| | - K Narimani
- Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany
| | - S Glass
- Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany
| | - N von den Driesch
- Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany
| | - J M Hartmann
- Université Grenoble Alpes , 38000 Grenoble, France
- CEA , LETI, Minatec Campus, 38054 Grenoble, France
| | - Z Ikonic
- Institute of Microwaves and Photonics, Schools of Electronic and Electrical Engineering, University of Leeds , Leeds L2 9JT, United Kingdom
| | - V V Afanas'ev
- Semiconductor Physics Laboratory, KU Leuven , 3001 Leuven, Belgium
| | - Q T Zhao
- Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany
| | - S Mantl
- Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany
| | - D Buca
- Peter Grünberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH , 52425 Juelich, Germany
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19
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Gupta S, Simoen E, Loo R, Madia O, Lin D, Merckling C, Shimura Y, Conard T, Lauwaert J, Vrielinck H, Heyns M. Density and Capture Cross-Section of Interface Traps in GeSnO2 and GeO2 Grown on Heteroepitaxial GeSn. ACS Appl Mater Interfaces 2016; 8:13181-13186. [PMID: 27172051 DOI: 10.1021/acsami.6b01582] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
An imperative factor in adapting GeSn as the channel material in CMOS technology, is the gate-oxide stack. The performance of GeSn transistors is degraded due to the high density of traps at the oxide-semiconductor interface. Several oxide-gate stacks have been pursued, and a midgap Dit obtained using the ac conductance method, is found in literature. However, a detailed signature of oxide traps like capture cross-section, donor/acceptor behavior and profile in the bandgap, is not yet available. We investigate the transition region between stoichiometric insulators and strained GeSn epitaxially grown on virtual Ge substrates. Al2O3 is used as high-κ oxide and either Ge1-xSnxO2 or GeO2 as interfacial layer oxide. The interface trap density (Dit) profile in the lower half of the bandgap is measured using deep level transient spectroscopy, and the importance of this technique for small bandgap materials like GeSn, is explained. Our results provide evidence for two conclusions. First, an interface traps density of 1.7 × 10(13) cm(-2)eV(-1) close to the valence band edge (Ev + 0.024 eV) and a capture cross-section (σp) of 1.7 × 10(-18) cm(2) is revealed for GeSnO2. These traps are associated with donor states. Second, it is shown that interfacial layer passivation of GeSn using GeO2 reduces the Dit by 1 order of magnitude (2.6 × 10(12) cm(-2)eV(-1)), in comparison to GeSnO2. The results are cross-verified using conductance method and saturation photovoltage technique. The Dit difference is associated with the presence of oxidized (Sn(4+)) and elemental Sn in the interfacial layer oxide.
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Affiliation(s)
- Somya Gupta
- Imec , Kapeldreef 75, Leuven B-3001, Belgium
- Department of Metallurgy and Materials Engineering (MTM), KU Leuven , Kasteelpark Arenberg 10, Leuven B-3001, Belgium
| | - Eddy Simoen
- Imec , Kapeldreef 75, Leuven B-3001, Belgium
- Department of Solid State Sciences, Ghent University , Krijgslaan 281/S1, Gent B-9000, Belgium
| | - Roger Loo
- Imec , Kapeldreef 75, Leuven B-3001, Belgium
| | - Oreste Madia
- Department of Physics and Astronomy, KU Leuven , Celestijnenlaan 200D, B-3001 Leuven, Belgium
| | - Dennis Lin
- Imec , Kapeldreef 75, Leuven B-3001, Belgium
| | | | - Yosuke Shimura
- Imec , Kapeldreef 75, Leuven B-3001, Belgium
- Department of Physics and Astronomy, KU Leuven , Celestijnenlaan 200D, B-3001 Leuven, Belgium
| | | | - Johan Lauwaert
- Department of Electronics and Information Systems, Ghent University , Sint-Pietersnieuwstraat 41, B-9000 Gent, Belgium
| | - Henk Vrielinck
- Department of Solid State Sciences, Ghent University , Krijgslaan 281/S1, Gent B-9000, Belgium
| | - Marc Heyns
- Imec , Kapeldreef 75, Leuven B-3001, Belgium
- Department of Metallurgy and Materials Engineering (MTM), KU Leuven , Kasteelpark Arenberg 10, Leuven B-3001, Belgium
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20
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Schulte-Braucks C, von den Driesch N, Glass S, Tiedemann AT, Breuer U, Besmehn A, Hartmann JM, Ikonic Z, Zhao QT, Mantl S, Buca D. Low Temperature Deposition of High-k/Metal Gate Stacks on High-Sn Content (Si) GeSn-Alloys. ACS Appl Mater Interfaces 2016; 8:13133-13139. [PMID: 27149260 DOI: 10.1021/acsami.6b02425] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/05/2023]
Abstract
(Si)GeSn is an emerging group IV alloy system offering new exciting properties, with great potential for low power electronics due to the fundamental direct band gap and prospects as high mobility material. In this Article, we present a systematic study of HfO2/TaN high-k/metal gate stacks on (Si)GeSn ternary alloys and low temperature processes for large scale integration of Sn based alloys. Our investigations indicate that SiGeSn ternaries show enhanced thermal stability compared to GeSn binaries, allowing the use of the existing Si technology. Despite the multielemental interface and large Sn content of up to 14 atom %, the HfO2/(Si)GeSn capacitors show small frequency dispersion and stretch-out. The formed TaN/HfO2/(Si)GeSn capacitors present a low leakage current of 2 × 10(-8) A/cm(2) at -1 V and a high breakdown field of ∼8 MV/cm. For large Sn content SiGeSn/GeSn direct band gap heterostructures, process temperatures below 350 °C are required for integration. We developed an atomic vapor deposition process for TaN metal gate on HfO2 high-k dielectric and validated it by resistivity as well as temperature and frequency dependent capacitance-voltage measurements of capacitors on SiGeSn and GeSn. The densities of interface traps are deduced to be in the low 10(12) cm(-2) eV(-1) range and do not depend on the Sn-concentration. The new processes developed here are compatible with (Si)GeSn integration in large scale applications.
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Affiliation(s)
- C Schulte-Braucks
- Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - N von den Driesch
- Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - S Glass
- Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - A T Tiedemann
- Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - U Breuer
- Zentralinstitut für Engineering, Elektronik und Analytik (ZEA-3), Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - A Besmehn
- Zentralinstitut für Engineering, Elektronik und Analytik (ZEA-3), Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - J-M Hartmann
- Univ. Grenoble Alpes, 38000 Grenoble, France and CEA, LETI, Minatec Campus, 38054 Grenoble, France
| | - Z Ikonic
- Institute of Microwaves and Photonics, School of Electronic and Electrical Engineering, University of Leeds , Leeds LS2 9JT, United Kingdom
| | - Q T Zhao
- Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - S Mantl
- Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
| | - D Buca
- Peter Gruenberg Institute 9 (PGI 9) and JARA-FIT, Forschungszentrum Juelich GmbH, 52425 Juelich, Germany
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Wirths S, Stange D, Pampillón MA, Tiedemann AT, Mussler G, Fox A, Breuer U, Baert B, San Andrés E, Nguyen ND, Hartmann JM, Ikonic Z, Mantl S, Buca D. High-k gate stacks on low bandgap tensile strained Ge and GeSn alloys for field-effect transistors. ACS Appl Mater Interfaces 2015; 7:62-67. [PMID: 25531887 DOI: 10.1021/am5075248] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.2] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/04/2023]
Abstract
We present the epitaxial growth of Ge and Ge0.94Sn0.06 layers with 1.4% and 0.4% tensile strain, respectively, by reduced pressure chemical vapor deposition on relaxed GeSn buffers and the formation of high-k/metal gate stacks thereon. Annealing experiments reveal that process temperatures are limited to 350 °C to avoid Sn diffusion. Particular emphasis is placed on the electrical characterization of various high-k dielectrics, as 5 nm Al2O3, 5 nm HfO2, or 1 nmAl2O3/4 nm HfO2, on strained Ge and strained Ge0.94Sn0.06. Experimental capacitance-voltage characteristics are presented and the effect of the small bandgap, like strong response of minority carriers at applied field, are discussed via simulations.
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Affiliation(s)
- Stephan Wirths
- Peter Grünberg Institute (PGI 9) and JARA-FIT , Forschungszentrum Jülich, 52425 Jülich, Germany
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