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Zhao B, Xu L, Peng R, Xin Z, Shi R, Wu Y, Wang B, Chen J, Pan T, Liu K. High-Performance 2D Ambipolar MoTe 2 Lateral Memristors by Mild Oxidation. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2402727. [PMID: 38958086 DOI: 10.1002/smll.202402727] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2024] [Revised: 06/10/2024] [Indexed: 07/04/2024]
Abstract
2D transition metal dichalcogenides (TMDCs) have been intensively explored in memristors for brain-inspired computing. Oxidation, which is usually unavoidable and harmful in 2D TMDCs, could also be used to enhance their memristive performances. However, it is still unclear how oxidation affects the resistive switching behaviors of 2D ambipolar TMDCs. In this work, a mild oxidation strategy is developed to greatly enhance the resistive switching ratio of ambipolar 2H-MoTe2 lateral memristors by more than 10 times. Such an enhancement results from the amplified doping due to O2 and H2O adsorption and the optimization of effective gate voltage distribution by mild oxidation. Moreover, the ambipolarity of 2H-MoTe2 also enables a change of resistive switching direction, which is uncommon in 2D memristors. Consequently, as an artificial synapse, the MoTe2 device exhibits a large dynamic range (≈200) and a good linearity (1.01) in long-term potentiation and depression, as well as a high-accuracy handwritten digit recognition (>96%). This work not only provides a feasible and effective way to enhance the memristive performance of 2D ambipolar materials, but also deepens the understanding of hidden mechanisms for RS behaviors in oxidized 2D materials.
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Affiliation(s)
- Bochen Zhao
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Longlong Xu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Run Shi
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Jiayuan Chen
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Ting Pan
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, P. R. China
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Fang J, Tang Z, Lai XC, Qiu F, Jiang YP, Liu QX, Tang XG, Sun QJ, Zhou YC, Fan JM, Gao J. New-Style Logic Operation and Neuromorphic Computing Enabled by Optoelectronic Artificial Synapses in an MXene/Y:HfO 2 Ferroelectric Memristor. ACS APPLIED MATERIALS & INTERFACES 2024; 16:31348-31362. [PMID: 38833382 DOI: 10.1021/acsami.4c05316] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Today's computing systems, to meet the enormous demands of information processing, have driven the development of brain-inspired neuromorphic systems. However, there are relatively few optoelectronic devices in most brain-inspired neuromorphic systems that can simultaneously regulate the conductivity through both optical and electrical signals. In this work, the Au/MXene/Y:HfO2/FTO ferroelectric memristor as an optoelectronic artificial synaptic device exhibited both digital and analog resistance switching (RS) behaviors under different voltages with a good switching ratio (>103). Under optoelectronic conditions, optimal weight update parameters and an enhanced algorithm achieved 97.1% recognition accuracy in convolutional neural networks. A new logic gate circuit specifically designed for optoelectronic inputs was established. Furthermore, the device integrates the impact of relative humidity to develop an innovative three-person voting mechanism with a veto power. These results provide a feasible approach for integrating optoelectronic artificial synapses with logic-based computing devices.
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Affiliation(s)
- Junlin Fang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Zhenhua Tang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Xi-Cai Lai
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Fan Qiu
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Yan-Ping Jiang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Qiu-Xiang Liu
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Xin-Gui Tang
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Qi-Jun Sun
- School of Physics and Optoelectric Engineering, Guangzhou Higher Education Mega Center, Guangdong University of Technology, Guangzhou 510006, P. R. China
| | - Yi-Chun Zhou
- School of Advanced Materials and Nanotechnology, Xidian University, Xian 710126, China
| | - Jing-Min Fan
- School of Automation, Guangdong University of Technology, Guangzhou 510006, China
| | - Ju Gao
- Department of Physics, The University of Hong Kong, Hong Kong 999077, P. R. China
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3
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Lee M, Kim Y, Mo SH, Kim S, Eom K, Lee H. Optoelectronic Synapse Based on 2D Electron Gas in Stoichiometry-Controlled Oxide Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2309851. [PMID: 38214690 DOI: 10.1002/smll.202309851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/30/2023] [Revised: 12/17/2023] [Indexed: 01/13/2024]
Abstract
Emulating synaptic functionalities in optoelectronic devices is significant in developing artificial visual-perception systems and neuromorphic photonic computing. Persistent photoconductivity (PPC) in metal oxides provides a facile way to realize the optoelectronic synaptic devices, but the PPC performance is often limited due to the oxygen vacancy defects that release excess conduction electrons without external stimuli. Herein, a high-performance optoelectronic synapse based on the stoichiometry-controlled LaAlO3/SrTiO3 (LAO/STO) heterostructure is developed. By increasing La/Al ratio up to 1.057:1, the PPC is effectively enhanced but suppressed the background conductivity at the LAO/STO interface, achieving strong synaptic behaviors. The spectral noise analyses reveal that the synaptic behaviors are attributed to the cation-related point defects and their charge compensation mechanism near the LAO/STO interface. The short-term and long-term plasticity is demonstrated, including the paired-pulse facilitation, in the La-rich LAO/STO device upon exposure to UV light pulses. As proof of concepts, two essential synaptic functionalities, the pulse-number-dependent plasticity and the self-noise cancellation, are emulated using the 5 × 5 array of La-rich LAO/STO synapses. Beyond the typical oxygen deficiency control, the results show how harnessing the cation stoichiometry can be used to design oxide heterostructures for advanced optoelectronic synapses and neuromorphic applications.
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Affiliation(s)
- Minkyung Lee
- Department of Physics, Ajou University, Suwon, 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Youngmin Kim
- Department of Physics, Ajou University, Suwon, 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
| | - Sang Hyeon Mo
- Department of Physics, Ajou University, Suwon, 16499, Republic of Korea
| | - Sungkyu Kim
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, Republic of Korea
| | - Kitae Eom
- Department of Electronic Engineering, Gachon University, Seongnam, 13120, Republic of Korea
| | - Hyungwoo Lee
- Department of Physics, Ajou University, Suwon, 16499, Republic of Korea
- Department of Energy Systems Research, Ajou University, Suwon, 16499, Republic of Korea
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4
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Wang S, Shi X, Gong J, Liu W, Jin C, Sun J, Peng Y, Yang J. Artificial Retina Based on Organic Heterojunction Transistors for Mobile Recognition. NANO LETTERS 2024; 24:3204-3212. [PMID: 38416569 DOI: 10.1021/acs.nanolett.4c00087] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/01/2024]
Abstract
The flicker frequency of incident light constitutes a critical determinant in biology. Nevertheless, the exploration of methods to simulate external light stimuli with varying frequencies and develop artificial retinal neurons capable of responsive behavior remains an open question. This study presents an artificial neuron comprising organic phototransistors. The triggering properties of neurons are modulated by optical input, enabling them to execute rudimentary synaptic functions, emulating the biological characteristics of retinal neurons. The artificial retinal neuron exhibits varying responses to incoming light frequencies, allowing it to replicate the persistent visual behavior of the human eye and facilitating image discrimination. Additionally, through seamless integration with circuitry, it can execute motion recognition on a machine cart, preventing collisions with high-speed obstacles. The artificial retinal neuron offers a cost-effective and energy-efficient route for future mobile robot processors.
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Affiliation(s)
- Shuyang Wang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Xiaofang Shi
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Jiaying Gong
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Wanrong Liu
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Chenxing Jin
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Jia Sun
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- State Key Laboratory of Precision Manufacturing for Extreme Service Performance, College of Mechanical and Electrical Engineering, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Yongyi Peng
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
| | - Junliang Yang
- Hunan Key Laboratory for Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan 410083, People's Republic of China
- Hunan Key Laboratory of Nanophotonics and Devices, School of Physics and Electronics, Central South University, 932 South Lushan Road, Changsha, Hunan 410083, People's Republic of China
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Wang J, Cheng F, Sun Y, Xu H, Cao L. Stacking engineering in layered homostructures: transitioning from 2D to 3D architectures. Phys Chem Chem Phys 2024; 26:7988-8012. [PMID: 38380525 DOI: 10.1039/d3cp04656g] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Artificial materials, characterized by their distinctive properties and customized functionalities, occupy a central role in a wide range of applications including electronics, spintronics, optoelectronics, catalysis, and energy storage. The emergence of atomically thin two-dimensional (2D) materials has driven the creation of artificial heterostructures, harnessing the potential of combining various 2D building blocks with complementary properties through the art of stacking engineering. The promising outcomes achieved for heterostructures have spurred an inquisitive exploration of homostructures, where identical 2D layers are precisely stacked. This perspective primarily focuses on the field of stacking engineering within layered homostructures, where precise control over translational or rotational degrees of freedom between vertically stacked planes or layers is paramount. In particular, we provide an overview of recent advancements in the stacking engineering applied to 2D homostructures. Additionally, we will shed light on research endeavors venturing into three-dimensional (3D) structures, which allow us to proactively address the limitations associated with artificial 2D homostructures. We anticipate that the breakthroughs in stacking engineering in 3D materials will provide valuable insights into the mechanisms governing stacking effects. Such advancements have the potential to unlock the full capability of artificial layered homostructures, propelling the future development of materials, physics, and device applications.
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Affiliation(s)
- Jiamin Wang
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Fang Cheng
- State Key Laboratory for Organic Electronics and Information Displays & Jiangsu Key Laboratory for Biosensors, Institute of Advanced Materials (IAM), Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM), Nanjing University of Posts and Telecommunications, Nanjing 210023, P. R. China
| | - Yan Sun
- Institutes of Physical Science and Information Technology, Anhui University, Hefei 230601, P. R. China.
| | - Hai Xu
- Changchun Institute of Optics, Fine Mechanics & Physics (CIOMP), Chinese Academy of Sciences, Changchun 130033, P. R. China.
- University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing 100049, P. R. China
- Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, P. R. China
| | - Liang Cao
- Anhui Key Laboratory of Low-Energy Quantum Materials and Devices, High Magnetic Field Laboratory, HFIPS, Chinese Academy of Sciences, Hefei 230031, P. R. China.
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6
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Kwon JY, Kim JE, Kim JS, Chun SY, Soh K, Yoon JH. Artificial sensory system based on memristive devices. EXPLORATION (BEIJING, CHINA) 2024; 4:20220162. [PMID: 38854486 PMCID: PMC10867403 DOI: 10.1002/exp.20220162] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/20/2023] [Accepted: 10/16/2023] [Indexed: 06/11/2024]
Abstract
In the biological nervous system, the integration and cooperation of parallel system of receptors, neurons, and synapses allow efficient detection and processing of intricate and disordered external information. Such systems acquire and process environmental data in real-time, efficiently handling complex tasks with minimal energy consumption. Memristors can mimic typical biological receptors, neurons, and synapses by implementing key features of neuronal signal-processing functions such as selective adaption in receptors, leaky integrate-and-fire in neurons, and synaptic plasticity in synapses. External stimuli are sensitively detected and filtered by "artificial receptors," encoded into spike signals via "artificial neurons," and integrated and stored through "artificial synapses." The high operational speed, low power consumption, and superior scalability of memristive devices make their integration with high-performance sensors a promising approach for creating integrated artificial sensory systems. These integrated systems can extract useful data from a large volume of raw data, facilitating real-time detection and processing of environmental information. This review explores the recent advances in memristor-based artificial sensory systems. The authors begin with the requirements of artificial sensory elements and then present an in-depth review of such elements demonstrated by memristive devices. Finally, the major challenges and opportunities in the development of memristor-based artificial sensory systems are discussed.
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Affiliation(s)
- Ju Young Kwon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
| | - Ji Eun Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jong Sung Kim
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Suk Yeop Chun
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- KU‐KIST Graduate School of Converging Science and TechnologyKorea UniversitySeoulRepublic of Korea
| | - Keunho Soh
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
- Department of Materials Science and EngineeringKorea UniversitySeoulRepublic of Korea
| | - Jung Ho Yoon
- Electronic Materials Research CenterKorea Institute of Science and Technology (KIST)SeoulRepublic of Korea
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7
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Guo ST, Du YW, Luo H, Zhu Z, Ouyang T, Liu ZQ. Stabilizing Undercoordinated Zn Active Sites through Confinement in CeO 2 Nanotubes for Efficient Electrochemical CO 2 Reduction. Angew Chem Int Ed Engl 2024; 63:e202314099. [PMID: 38059828 DOI: 10.1002/anie.202314099] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/20/2023] [Revised: 11/30/2023] [Accepted: 12/01/2023] [Indexed: 12/08/2023]
Abstract
Zn-based catalysts hold great potential to replace the noble metal-based ones for CO2 reduction reaction (CO2 RR). Undercoordinated Zn (Znδ+ ) sites may serve as the active sites for enhanced CO production by optimizing the binding energy of *COOH intermediates. However, there is relatively less exploration into the dynamic evolution and stability of Znδ+ sites during CO2 reduction process. Herein, we present ZnO, Znδ+ /ZnO and Zn as catalysts by varying the applied reduction potential. Theoretical studies reveal that Znδ+ sites could suppress HER and HCOOH production to induce CO generation. And Znδ+ /ZnO presents the highest CO selectivity (FECO 70.9 % at -1.48 V vs. RHE) compared to Zn and ZnO. Furthermore, we propose a CeO2 nanotube with confinement effect and Ce3+ /Ce4+ redox to stabilize Znδ+ species. The hollow core-shell structure of the Znδ+ /ZnO/CeO2 catalyst enables to extremely expose electrochemically active area while maintaining the Znδ+ sites with long-time stability. Certainly, the target catalyst affords a FECO of 76.9 % at -1.08 V vs. RHE and no significant decay of CO selectivity in excess of 18 h.
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Affiliation(s)
- Si-Tong Guo
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials/Guangzhou Key Laboratory for Clean Energy and Materials/Huangpu Hydrogen Innovation Center/Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Guangzhou University, Guangzhou Higher Education Mega Center, No. 230 Wai Huan Xi Road, Guangzhou, 510006, P. R. China
| | - Yu-Wei Du
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials/Guangzhou Key Laboratory for Clean Energy and Materials/Huangpu Hydrogen Innovation Center/Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Guangzhou University, Guangzhou Higher Education Mega Center, No. 230 Wai Huan Xi Road, Guangzhou, 510006, P. R. China
| | - Huihua Luo
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials/Guangzhou Key Laboratory for Clean Energy and Materials/Huangpu Hydrogen Innovation Center/Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Guangzhou University, Guangzhou Higher Education Mega Center, No. 230 Wai Huan Xi Road, Guangzhou, 510006, P. R. China
| | - Ziyin Zhu
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials/Guangzhou Key Laboratory for Clean Energy and Materials/Huangpu Hydrogen Innovation Center/Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Guangzhou University, Guangzhou Higher Education Mega Center, No. 230 Wai Huan Xi Road, Guangzhou, 510006, P. R. China
| | - Ting Ouyang
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials/Guangzhou Key Laboratory for Clean Energy and Materials/Huangpu Hydrogen Innovation Center/Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Guangzhou University, Guangzhou Higher Education Mega Center, No. 230 Wai Huan Xi Road, Guangzhou, 510006, P. R. China
| | - Zhao-Qing Liu
- School of Chemistry and Chemical Engineering/Institute of Clean Energy and Materials/Guangzhou Key Laboratory for Clean Energy and Materials/Huangpu Hydrogen Innovation Center/Key Laboratory for Water Quality and Conservation of the Pearl River Delta, Ministry of Education, Guangzhou University, Guangzhou Higher Education Mega Center, No. 230 Wai Huan Xi Road, Guangzhou, 510006, P. R. China
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8
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Wang H, Lu Y, Liu S, Yu J, Hu M, Li S, Yang R, Watanabe K, Taniguchi T, Ma Y, Miao X, Zhuge F, He Y, Zhai T. Adaptive Neural Activation and Neuromorphic Processing via Drain-Injection Threshold-Switching Float Gate Transistor Memory. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2309099. [PMID: 37953691 DOI: 10.1002/adma.202309099] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/05/2023] [Revised: 11/06/2023] [Indexed: 11/14/2023]
Abstract
Hetero-modulated neural activation is vital for adaptive information processing and learning that occurs in brain. To implement brain-inspired adaptive processing, previously various neurotransistors oriented for synaptic functions are extensively explored, however, the emulation of nonlinear neural activation and hetero-modulated behaviors are not possible due to the lack of threshold switching behavior in a conventional transistor structure. Here, a 2D van der Waals float gate transistor (FGT) that exhibits steep threshold switching behavior, and the emulation of hetero-modulated neuron functions (integrate-and-fire, sigmoid type activation) for adaptive sensory processing, are reported. Unlike conventional FGTs, the threshold switching behavior stems from impact ionization in channel and the coupled charge injection to float gate. When a threshold is met, a sub-30 mV dec-1 increase of transistor conductance by more than four orders is triggered with a typical switch time of approximately milliseconds. Essentially, by feeding light sensing signal as the modulation input, it is demonstrated that two typical tasks that rely on adaptive neural activation, including collision avoidance and adaptive visual perception, can be realized. These results may shed light on the emulation of rich hetero-modulating behaviors in biological neurons and the realization of biomimetic neuromorphic processing at low hardware cost.
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Affiliation(s)
- Han Wang
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Yuanlong Lu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Shangbo Liu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Jun Yu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Man Hu
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Sainan Li
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Rui Yang
- Hubei Yangtze Memory Laboratory, School of Integrated circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Kenji Watanabe
- Research Center for Electronic and Optical Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- Research Center for Materials Nanoarchitectonics, National Institute for Materials Science, Namiki, Tsukuba, 305-0044, Japan
| | - Ying Ma
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Xiangshui Miao
- Hubei Yangtze Memory Laboratory, School of Integrated circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Fuwei Zhuge
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
| | - Yuhui He
- Hubei Yangtze Memory Laboratory, School of Integrated circuits, Huazhong University of Science and Technology, Wuhan, 430074, China
| | - Tianyou Zhai
- State Key Laboratory of Materials Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology (HUST), Wuhan, 430074, China
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9
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Li Y, Wang K, Wang Y, Qian Z, Huang W, Wang J, Yang Q, Wang H, Liao J, Hussain S, Xie L, Qi J. Synthesis of component-controllable monolayer Mo xW (1-x)S 2ySe 2(1-y) alloys with continuously tunable band gap and carrier type. RSC Adv 2023; 13:34464-34474. [PMID: 38024984 PMCID: PMC10667966 DOI: 10.1039/d3ra07065d] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/17/2023] [Accepted: 11/17/2023] [Indexed: 12/01/2023] Open
Abstract
Alloying can effectively modify electronic and optical properties of two-dimensional (2D) transition metal dichalcogenides (TMDs). However, efficient and simple methods to synthesize atomically thin TMD alloys need to be further developed. In this study, we synthesized 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys by using a new liquid phase edge epitaxy (LPEE) growth method with high controllability. This straightforward approach can be used to obtain monolayer materials and operates on a self-limiting growth mechanism. The process allows the liquid solution to come into contact with the two-dimensional grains only at their edges, resulting in epitaxy confined only along the in-plane direction, which produces exclusively monolayer epitaxy. By controlling the weight ratio of MoS2/WSe2 (MoSe2/WS2), 25 monolayer MoxW(1-x)S2ySe2(1-y) alloys with different atomic ratios can be obtained on sapphire substrates, with band gap ranging from WS2 (1.55 eV) to MoSe2 (1.99 eV) and a continuously broad spectrum ranging from 623 nm to 800 nm. By adjusting the alloy composition, the carrier type and carrier mobility of alloy-based field-effect transistors can be modulated. In particular, the adjustable conductivity of MoxW(1-x)S2ySe2(1-y) alloys from n-type to bipolar type is achieved for the first time. This general synthetic strategy provides a foundation for the development of monolayer TMD alloys with multiple components and various 2D materials.
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Affiliation(s)
- You Li
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Kangkang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Yiwen Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Ziyue Qian
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Wenbin Huang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Junqi Wang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Qichao Yang
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
| | - Honggang Wang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junyi Liao
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Sabir Hussain
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Liming Xie
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology Beijing 100190 China
| | - Junjie Qi
- School of Materials Science and Engineering, University of Science and Technology Beijing Beijing 100083 P. R. China
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10
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Yang C, Su L, Xia K, Li X, Liu Y, Li H. Doping-modulated lateral asymmetric Schottky diode as a high-performance self-powered synaptic device. OPTICS EXPRESS 2023; 31:31061-31071. [PMID: 37710634 DOI: 10.1364/oe.498708] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/22/2023] [Accepted: 08/25/2023] [Indexed: 09/16/2023]
Abstract
In the post-Moore era, the gradually saturated computational capability of conventional digital computers showing the opposite trend as the exponentially increasing data volumes imperatively required a platform or technology to break this bottleneck. Brain-inspired neuromorphic computing promises to inherently improve the efficiency of information processing and computation by means of the highly parallel hardware architecture to reduce global data transmission. Here, we demonstrate a compact device technology based on the barrier asymmetry to achieve zero-consumption self-powered synaptic devices. In order to tune the device behaviors, the typical chemical doping is used to tailor the asymmetry for energy harvesting. Finally, in our demonstrated devices, the open-circuit voltage (VOC) and power-conversion efficiency (PCE) can be modulated up to 0.77 V and 6%, respectively. Optimized photovoltaic features affords synaptic devices with an outstanding programming weight states, involving training facilitation, stimulus reinforce and consolidation. Based on self-powered system, this work further presents a highly available modulation scheme, which achieves excellent device behaviors while ensuring the zero-energy consumption.
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11
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Tan X, Wang S, Zhang Q, He J, Chen S, Qu Y, Liu Z, Tang Y, Liu X, Wang C, Wang Q, Liu Q. Laser doping of 2D material for precise energy band design. NANOSCALE 2023. [PMID: 37161768 DOI: 10.1039/d3nr00808h] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/11/2023]
Abstract
The number of excellent 2D materials is finite for nano optoelectric devices including transistors, diodes, sensors, and so forth, thus the modulation of 2D materials is important to improve the performance of the current eligible 2D materials, and even to transform unqualified 2D materials into eligible 2D materials. Here we develop a fine laser doping strategy based on highly controllable laser direct writing, and investigate its effectivity and practicability by doping multilayer molybdenum ditelluride (MoTe2). Power-gradient laser doping and patterned laser doping, for the first time, are presented for designable and fine doping of 2D materials. The laser-induced polar transition of MoTe2 indicates good controllability of the method for the carrier concentration distribution in MoTe2. Multiple devices with finely tuned energy band structures are demonstrated by means of power-gradient laser doping and patterned laser doping, further illustrating the design capability of a precise energy band in 2D materials.
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Affiliation(s)
- Xiang Tan
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- Zhenjiang key laboratory of advanced sensing materials and devices, Jiangsu University, Zhenjiang 212013, PR China
| | - Shu Wang
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Qiaoxuan Zhang
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Juxing He
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Shengyao Chen
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
| | - Yusong Qu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
| | - Zhenzhou Liu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- School of Physical Science and Technology, Inner Mongolia University, Inner Mongolia 010000, China
| | - Yong Tang
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Xintong Liu
- Hebei University of Water Resources and Electric Engineering Electrical Automation Department, 061001, Cangzhou, Hebei, China
| | - Cong Wang
- College of Mathematics and Physics, Beijing University of Chemical Technology, Beijing, 100029, China
| | - Quan Wang
- Zhenjiang key laboratory of advanced sensing materials and devices, Jiangsu University, Zhenjiang 212013, PR China
| | - Qian Liu
- CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology & University of Chinese Academy of Sciences, Beijing 100190, China.
- MOE Key Laboratory of Weak-Light Nonlinear Photonics, TEDA Applied Physics Institute, School of Physics, Nankai University, Tianjin 300457, China
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12
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Zhang Y, Huang Z, Jiang J. Emerging photoelectric devices for neuromorphic vision applications: principles, developments, and outlooks. SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS 2023; 24:2186689. [PMID: 37007672 PMCID: PMC10054230 DOI: 10.1080/14686996.2023.2186689] [Citation(s) in RCA: 7] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 12/26/2022] [Revised: 02/16/2023] [Accepted: 02/28/2023] [Indexed: 06/19/2023]
Abstract
The traditional von Neumann architecture is gradually failing to meet the urgent need for highly parallel computing, high-efficiency, and ultra-low power consumption for the current explosion of data. Brain-inspired neuromorphic computing can break the inherent limitations of traditional computers. Neuromorphic devices are the key hardware units of neuromorphic chips to implement the intelligent computing. In recent years, the development of optogenetics and photosensitive materials has provided new avenues for the research of neuromorphic devices. The emerging optoelectronic neuromorphic devices have received a lot of attentions because they have shown great potential in the field of visual bionics. In this paper, we summarize the latest visual bionic applications of optoelectronic synaptic memristors and transistors based on different photosensitive materials. The basic principle of bio-vision formation is first introduced. Then the device structures and operating mechanisms of optoelectronic memristors and transistors are discussed. Most importantly, the recent progresses of optoelectronic synaptic devices based on various photosensitive materials in the fields of visual perception are described. Finally, the problems and challenges of optoelectronic neuromorphic devices are summarized, and the future development of visual bionics is also proposed.
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Affiliation(s)
- Yi Zhang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Zhuohui Huang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
| | - Jie Jiang
- Hunan Key Laboratory of Nanophotonics and Devices, Hunan Key Laboratory of Super Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha, Hunan, China
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13
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Xiao Y, Xiong C, Chen MM, Wang S, Fu L, Zhang X. Structure modulation of two-dimensional transition metal chalcogenides: recent advances in methodology, mechanism and applications. Chem Soc Rev 2023; 52:1215-1272. [PMID: 36601686 DOI: 10.1039/d1cs01016f] [Citation(s) in RCA: 18] [Impact Index Per Article: 18.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/06/2023]
Abstract
Together with the development of two-dimensional (2D) materials, transition metal dichalcogenides (TMDs) have become one of the most popular series of model materials for fundamental sciences and practical applications. Due to the ever-growing requirements of customization and multi-function, dozens of modulated structures have been introduced in TMDs. In this review, we present a systematic and comprehensive overview of the structure modulation of TMDs, including point, linear and out-of-plane structures, following and updating the conventional classification for silicon and related bulk semiconductors. In particular, we focus on the structural characteristics of modulated TMD structures and analyse the corresponding root causes. We also summarize the recent progress in modulating methods, mechanisms, properties and applications based on modulated TMD structures. Finally, we demonstrate challenges and prospects in the structure modulation of TMDs and forecast potential directions about what and how breakthroughs can be achieved.
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Affiliation(s)
- Yao Xiao
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Chengyi Xiong
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Miao-Miao Chen
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Shengfu Wang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
| | - Lei Fu
- The Institute for Advanced Studies (IAS), Wuhan University, Wuhan 430072, P. R. China. .,College of Chemistry and Molecular Sciences, Wuhan University, Wuhan 430072, P. R. China.
| | - Xiuhua Zhang
- Collaborative Innovation Centre for Advanced Organic Chemical Materials Co-Constructed by the Province and Ministry, Ministry of Education Key Laboratory for the Synthesis and Application of Organic Functional Molecules, College of Chemistry and Chemical Engineering, Hubei University, Wuhan 430062, P. R. China.
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14
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Yu M, Hu Z, Zhou J, Lu Y, Guo W, Zhang Z. Retrieving Grain Boundaries in 2D Materials. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2205593. [PMID: 36461686 DOI: 10.1002/smll.202205593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/09/2022] [Revised: 11/13/2022] [Indexed: 06/17/2023]
Abstract
The coalescence of randomly distributed grains with different crystallographic orientations can result in pervasive grain boundaries (GBs) in 2D materials during their chemical synthesis. GBs not only are the inherent structural imperfection that causes influential impacts on structures and properties of 2D materials, but also have emerged as a platform for exploring unusual physics and functionalities stemming from dramatic changes in local atomic organization and even chemical makeup. Here, recent advances in studying the formation mechanism, atomic structures, and functional properties of GBs in a range of 2D materials are reviewed. By analyzing the growth mechanism and the competition between far-field strain and local chemical energies of dislocation cores, a complete understanding of the rich GB morphologies as well as their dependence on lattice misorientations and chemical compositions is presented. Mechanical, electronic, and chemical properties tied to GBs in different materials are then discussed, towards raising the concept of using GBs as a robust atomic-scale scaffold for realizing tailored functionalities, such as magnetism, luminescence, and catalysis. Finally, the future opportunities in retrieving GBs for making functional devices and the major challenges in the controlled formation of GB structures for designed applications are commented.
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Affiliation(s)
- Maolin Yu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhili Hu
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Jingzhuo Zhou
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Yang Lu
- Department of Mechanical Engineering, City University of Hong Kong, Kowloon, Hong Kong SAR, 999077, China
| | - Wanlin Guo
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
| | - Zhuhua Zhang
- Key Laboratory for Intelligent Nano Materials and Devices of Ministry of Education, State Key Laboratory of Mechanics and Control of Mechanical Structures, and Institute for Frontier Science, Nanjing University of Aeronautics and Astronautics, Nanjing, 210016, China
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15
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Giri A, Park G, Jeong U. Layer-Structured Anisotropic Metal Chalcogenides: Recent Advances in Synthesis, Modulation, and Applications. Chem Rev 2023; 123:3329-3442. [PMID: 36719999 PMCID: PMC10103142 DOI: 10.1021/acs.chemrev.2c00455] [Citation(s) in RCA: 11] [Impact Index Per Article: 11.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/01/2023]
Abstract
The unique electronic and catalytic properties emerging from low symmetry anisotropic (1D and 2D) metal chalcogenides (MCs) have generated tremendous interest for use in next generation electronics, optoelectronics, electrochemical energy storage devices, and chemical sensing devices. Despite many proof-of-concept demonstrations so far, the full potential of anisotropic chalcogenides has yet to be investigated. This article provides a comprehensive overview of the recent progress made in the synthesis, mechanistic understanding, property modulation strategies, and applications of the anisotropic chalcogenides. It begins with an introduction to the basic crystal structures, and then the unique physical and chemical properties of 1D and 2D MCs. Controlled synthetic routes for anisotropic MC crystals are summarized with example advances in the solution-phase synthesis, vapor-phase synthesis, and exfoliation. Several important approaches to modulate dimensions, phases, compositions, defects, and heterostructures of anisotropic MCs are discussed. Recent significant advances in applications are highlighted for electronics, optoelectronic devices, catalysts, batteries, supercapacitors, sensing platforms, and thermoelectric devices. The article ends with prospects for future opportunities and challenges to be addressed in the academic research and practical engineering of anisotropic MCs.
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Affiliation(s)
- Anupam Giri
- Department of Chemistry, Faculty of Science, University of Allahabad, Prayagraj, UP-211002, India
| | - Gyeongbae Park
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea.,Functional Materials and Components R&D Group, Korea Institute of Industrial Technology, Gwahakdanji-ro 137-41, Sacheon-myeon, Gangneung, Gangwon-do25440, Republic of Korea
| | - Unyong Jeong
- Department of Materials Science and Engineering, Pohang University of Science and Technology, Cheongam-Ro 77, Nam-Gu, Pohang, Gyeongbuk790-784, Korea
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16
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Wang L, Wang D, Luo Y, Xu CY, Cui L, Li XB, Sun HB. Electronic state evolution of oxygen-doped monolayer WSe 2 assisted by femtosecond laser irradiation. Phys Chem Chem Phys 2023; 25:2043-2049. [PMID: 36546549 DOI: 10.1039/d2cp04495a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/11/2022]
Abstract
Electronic states are significantly correlated with chemical compositions, and the information related to these factors is especially crucial for the manipulation of the properties of matter. However, this key information is usually verified by after-validation methods, which could not be obtained during material processing, for example, in the field of femtosecond laser direct writing inside materials. Here, critical evolution stages of electronic states for monolayer tungsten diselenide (WSe2) around the modification threshold (at a Mott density of ∼1013 cm-2) are observed by broadband femtosecond transient absorption spectroscopy, which is associated with the intense femtosecond-laser-assisted oxygen-doping mechanism. First-principles calculations and control experiments on graphene-covered monolayer WSe2 further confirm this modification mechanism. Our findings reveal a photochemical reaction for monolayer WSe2 under the Mott density condition and provide an electronic state criterion to in situ monitor the degrees of modification in monolayer transition metal dichalcogenides during the femtosecond laser modification.
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Affiliation(s)
- Lei Wang
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Dan Wang
- Department of Mechanical Engineering and Materials Science, Yale University, New Haven, CT 06511, USA
| | - Yang Luo
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China.,Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033, China
| | - Chen-Yu Xu
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Lin Cui
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Xian-Bin Li
- State Key Laboratory of Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, 2699 Qianjin Street, Changchun 130012, China
| | - Hong-Bo Sun
- State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Haidian, Beijing 100084, China.
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17
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Yang SJ, Choi MY, Kim CJ. Engineering Grain Boundaries in Two-Dimensional Electronic Materials. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2203425. [PMID: 35777352 DOI: 10.1002/adma.202203425] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/15/2022] [Revised: 06/30/2022] [Indexed: 06/15/2023]
Abstract
Engineering the boundary structures in 2D materials provides an unprecedented opportunity to program the physical properties of the materials with extensive tunability and realize innovative devices with advanced functionalities. However, structural engineering technology is still in its infancy, and creating artificial boundary structures with high reproducibility remains difficult. In this review, various emergent properties of 2D materials with different grain boundaries, and the current techniques to control the structures, are introduced. The remaining challenges for scalable and reproducible structure control and the outlook on the future directions of the related techniques are also discussed.
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Affiliation(s)
- Seong-Jun Yang
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Min-Yeong Choi
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
| | - Cheol-Joo Kim
- Center for Epitaxial van der Waals Quantum Solids, Institute for Basic Science (IBS), Pohang, Gyeongbuk, 37673, Republic of Korea
- Department of Chemical Engineering, Pohang University of Science and Technology, Pohang, Gyeongbuk, 37673, Republic of Korea
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18
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Duan H, Cheng S, Qin L, Zhang X, Xie B, Zhang Y, Jie W. Low-Power Memristor Based on Two-Dimensional Materials. J Phys Chem Lett 2022; 13:7130-7138. [PMID: 35900941 DOI: 10.1021/acs.jpclett.2c01962] [Citation(s) in RCA: 11] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The memristor is an excellent candidate for nonvolatile memory and neuromorphic computing. Recently, two-dimensional (2D) materials have been developed for use in memristors with high-performance resistive switching characteristics, such as high on/off ratios, low SET/RESET voltages, good retention and endurance, fast switching speed, and low power and energy consumption. Low-power memristors are highly desired for recent fast-speed and energy-efficient artificial neuromorphic networks. This Perspective focuses on the recent progress of low-power memristors based on 2D materials, providing a condensed overview of relevant developments in memristive performance, physical mechanism, material modification, and device assembly as well as potential applications. The detailed research status of memristors has been reviewed based on different 2D materials from insulating hexagonal boron nitride, semiconducting transition metal dichalcogenides, to some newly developed 2D materials. Furthermore, a brief summary introducing the perspectives and challenges is included, with the aim of providing an insightful guide for this research field.
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Affiliation(s)
- Huan Duan
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Siqi Cheng
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Ling Qin
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Xuelian Zhang
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Bingyang Xie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
| | - Yang Zhang
- Institute of Modern Optics & Tianjin Key Laboratory of Micro-Scale Optical Information Science and Technology, Nankai University, Tianjin 300071, China
| | - Wenjing Jie
- College of Chemistry and Materials Science, Sichuan Normal University, Chengdu 610066, China
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19
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Kang T, Tang TW, Pan B, Liu H, Zhang K, Luo Z. Strategies for Controlled Growth of Transition Metal Dichalcogenides by Chemical Vapor Deposition for Integrated Electronics. ACS MATERIALS AU 2022; 2:665-685. [PMID: 36855548 PMCID: PMC9928416 DOI: 10.1021/acsmaterialsau.2c00029] [Citation(s) in RCA: 10] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Indexed: 12/30/2022]
Abstract
In recent years, transition metal dichalcogenide (TMD)-based electronics have experienced a prosperous stage of development, and some considerable applications include field-effect transistors, photodetectors, and light-emitting diodes. Chemical vapor deposition (CVD), a typical bottom-up approach for preparing 2D materials, is widely used to synthesize large-area 2D TMD films and is a promising method for mass production to implement them for practical applications. In this review, we investigate recent progress in controlled CVD growth of 2D TMDs, aiming for controlled nucleation and orientation, using various CVD strategies such as choice of precursors or substrates, process optimization, and system engineering. We then survey different patterning methods, such as surface patterning, metal precursor patterning, and postgrowth sulfurization/selenization/tellurization, to mass produce heterostructures for device applications. With these strategies, various well-designed architectures, such as wafer-scale single crystals, vertical and lateral heterostructures, patterned structures, and arrays, are achieved. In addition, we further discuss various electronics made from CVD-grown TMDs to demonstrate the diverse application scenarios. Finally, perspectives regarding the current challenges of controlled CVD growth of 2D TMDs are also suggested.
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Affiliation(s)
- Ting Kang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Tsz Wing Tang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Baojun Pan
- Macao
Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology, Taipa, Macau 999078, P.R. China
| | - Hongwei Liu
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Kenan Zhang
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China
| | - Zhengtang Luo
- Department
of Chemical and Biological Engineering, Guangdong-Hong Kong-Macao
Joint Laboratory for Intelligent Micro-Nano Optoelectronic Technology,
William Mong Institute of Nano Science and Technology, and Hong Kong
Branch of Chinese National Engineering Research Center for Tissue
Restoration and Reconstruction, Hong Kong
University of Science and Technology, Clear Water Bay, Kowloon 999077, Hong Kong, P.R. China,
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20
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Hou X, Liu H, Zhang Q, Fang T, Sun M, Peng W, Li Y, Zhang F, Fan X. Grain-boundary-rich layered double hydroxides via a boron-assisted strategy for the oxygen evolution reaction. Chem Commun (Camb) 2022; 58:5646-5649. [PMID: 35441626 DOI: 10.1039/d2cc00867j] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
This study reports a facile boron-assisted strategy to prepare NiFe LDHs with rich grain boundaries. The formation of these grain boundaries originates from the imperfect oriented attachment between primary LDH particles transformed from amorphous borides/borates. The obtained grain-boundary-rich NiFe LDHs exhibit excellent oxygen evolution reaction activity.
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Affiliation(s)
- Xiaohan Hou
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Huibin Liu
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Qicheng Zhang
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Tiantian Fang
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Minghong Sun
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Wenchao Peng
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Yang Li
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Fengbao Zhang
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China.
| | - Xiaobin Fan
- School of Chemical Engineering and Technology, State Key Laboratory of Chemical Engineering, Collaborative Innovation Center of Chemical Science and Engineering, Haihe Laboratory of Sustainable Chemical Transformations, Tianjin University, Tianjin 300072, People's Republic of China. .,Institute of Shaoxing, Tianjin University, Zhejiang 312300, People's Republic of China
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21
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Zhang S, Deng X, Wu Y, Wang Y, Ke S, Zhang S, Liu K, Lv R, Li Z, Xiong Q, Wang C. Lateral layered semiconductor multijunctions for novel electronic devices. Chem Soc Rev 2022; 51:4000-4022. [PMID: 35477783 DOI: 10.1039/d1cs01092a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/21/2022]
Abstract
Layered semiconductors, represented by transition metal dichalcogenides, have attached extensive attention due to their unique and tunable electrical and optical properties. In particular, lateral layered semiconductor multijunctions, including homojunctions, heterojunctions, hybrid junctions and superlattices, present a totally new degree of freedom in research on electronic devices beyond traditional materials and their structures, providing unique opportunities for the development of new structures and operation principle-based high performance devices. However, the advances in this field are limited by the precise synthesis of high-quality junctions and greatly hampered by ambiguous device performance limits. Herein, we review the recent key breakthroughs in the design, synthesis, electronic structure and property modulation of lateral semiconductor multijunctions and focus on their application-specific devices. Specifically, the synthesis methods based on different principles, such as chemical and external source-induced methods, are introduced stepwise for the controllable fabrication of semiconductor multijunctions as the basics of device application. Subsequently, their structure and property modulation are discussed, including control of their electronic structure, exciton dynamics and optical properties before the fabrication of lateral layered semiconductor multijunction devices. Precise property control will potentially result in outstanding device performances, including high-quality diodes and FETs, scalable logic and analog circuits, highly efficient optoelectronic devices, and unique electrochemical devices. Lastly, we focus on several of the most essential but unresolved debates in this field, such as the true advantages of few-layer vs. monolayer multijunctions, how sharp the interface should be for specific functional devices, and the superiority of lateral multijunctions over vertical multijunctions, highlighting the next-phase strategy to enhance the performance potential of lateral multijunction devices.
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Affiliation(s)
- Simian Zhang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Xiaonan Deng
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yifei Wu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Yuqi Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shengxian Ke
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Shishu Zhang
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Ruitao Lv
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Zhengcao Li
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
| | - Qihua Xiong
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Beijing Innovation Center for Future Chips, Tsinghua University, Beijing, 100084, China.,Frontier Science Center for Quantum Information, Beijing, 100084, China.,Beijing Academy of Quantum Information Sciences, Beijing, 100193, China.
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, Key Laboratory of Advanced Materials of Ministry of Education, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China.
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22
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Yin L, Cheng R, Wen Y, Zhai B, Jiang J, Wang H, Liu C, He J. High-Performance Memristors Based on Ultrathin 2D Copper Chalcogenides. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108313. [PMID: 34989444 DOI: 10.1002/adma.202108313] [Citation(s) in RCA: 16] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/17/2021] [Revised: 12/21/2021] [Indexed: 06/14/2023]
Abstract
Copper chalcogenides represent a class of materials with unique crystal structures, high electrical conductivity, and earth abundance, and are recognized as promising candidates for next-generation green electronics. However, their 2D structures and the corresponding electronic properties have rarely been touched. Herein, a series of ultrathin copper chalcogenide nanosheets with thicknesses down to two unit cells are successfully synthesized, including layered Cu2 Te, as well as nonlayered CuSe and Cu9 S5 , via van der Waals epitaxy, and their nonvolatile memristive behavior is investigated for the first time. Benefiting from the highly active Cu ions with low migration barriers, the memristors based on ultrathin 2D copper chalcogenide crystals exhibit relatively small switching voltage (≈0.4 V), fast switching speed, high switching uniformity, and wide operating temperature range (from 80 to 420 K), as well as stable retention and good cyclic endurance. These results demonstrate their tangible applications in future low-power, cryogenic, and high temperature harsh electronics.
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Affiliation(s)
- Lei Yin
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Ruiqing Cheng
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Yao Wen
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Baoxing Zhai
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jian Jiang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Hao Wang
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Chuansheng Liu
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
| | - Jun He
- Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, and School of Physics and Technology, Wuhan University, Wuhan, 430072, P. R. China
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23
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Jo C, Kim J, Kwak JY, Kwon SM, Park JB, Kim J, Park GS, Kim MG, Kim YH, Park SK. Retina-Inspired Color-Cognitive Learning via Chromatically Controllable Mixed Quantum Dot Synaptic Transistor Arrays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2108979. [PMID: 35044005 DOI: 10.1002/adma.202108979] [Citation(s) in RCA: 20] [Impact Index Per Article: 10.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/06/2021] [Revised: 12/31/2021] [Indexed: 06/14/2023]
Abstract
Artificial photonic synapses are emerging as a promising implementation to emulate the human visual cognitive system by consolidating a series of processes for sensing and memorizing visual information into one system. In particular, mimicking retinal functions such as multispectral color perception and controllable nonvolatility is important for realizing artificial visual systems. However, many studies to date have focused on monochromatic-light-based photonic synapses, and thus, the emulation of color discrimination capability remains an important challenge for visual intelligence. Here, an artificial multispectral color recognition system by employing heterojunction photosynaptic transistors consisting of ratio-controllable mixed quantum dot (M-QD) photoabsorbers and metal-oxide semiconducting channels is proposed. The biological photoreceptor inspires M-QD photoabsorbers with a precisely designed red (R), green (G), and blue (B)-QD ratio, enabling full-range visible color recognition with high photo-to-electric conversion efficiency. In addition, adjustable synaptic plasticity by modulating gate bias allows multiple nonvolatile-to-volatile memory conversion, leading to chromatic control in the artificial photonic synapse. To ensure the viability of the developed proof of concept, a 7 × 7 pixelated photonic synapse array capable of performing outstanding color image recognition based on adjustable wavelength-dependent volatility conversion is demonstrated.
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Affiliation(s)
- Chanho Jo
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Jaehyun Kim
- Department of Chemistry and Materials Research Center, Northwestern University, 2145 Sheridan Road, Evanston, IL, 60208, USA
| | - Jee Young Kwak
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Sung Min Kwon
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Joon Bee Park
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
| | - Jeehoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Gyeong-Su Park
- Department of Materials Science and Engineering and Research Institute of Advanced Materials, Seoul National University, Seoul, 08826, Republic of Korea
| | - Myung-Gil Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Yong-Hoon Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 16419, Republic of Korea
| | - Sung Kyu Park
- Department of Electrical and Electronics Engineering, Chung-Ang University, Seoul, 06974, Republic of Korea
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24
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Wang B, Wang X, Wang E, Li C, Peng R, Wu Y, Xin Z, Sun Y, Guo J, Fan S, Wang C, Tang J, Liu K. Monolayer MoS 2 Synaptic Transistors for High-Temperature Neuromorphic Applications. NANO LETTERS 2021; 21:10400-10408. [PMID: 34870433 DOI: 10.1021/acs.nanolett.1c03684] [Citation(s) in RCA: 18] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
As essential units in an artificial neural network (ANN), artificial synapses have to adapt to various environments. In particular, the development of synaptic transistors that can work above 125 °C is desirable. However, it is challenging due to the failure of materials or mechanisms at high temperatures. Here, we report a synaptic transistor working at hundreds of degrees Celsius. It employs monolayer MoS2 as the channel and Na+-diffused SiO2 as the ionic gate medium. A large on/off ratio of 106 can be achieved at 350 °C, 5 orders of magnitude higher than that of a normal MoS2 transistor in the same range of gate voltage. The short-term plasticity has a synaptic transistor function as an excellent low-pass dynamic filter. Long-term potentiation/depression and spike-timing-dependent plasticity are demonstrated at 150 °C. An ANN can be simulated, with the recognition accuracy reaching 90%. Our work provides promising strategies for high-temperature neuromorphic applications.
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Affiliation(s)
- Bolun Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Xuewen Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Enze Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Chenyu Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Ruixuan Peng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yonghuang Wu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Zeqin Xin
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Yufei Sun
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jing Guo
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Shoushan Fan
- Department of Physics and Tsinghua-Foxconn Nanotechnology Research Center, Tsinghua University, Beijing 100084, People's Republic of China
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, People's Republic of China
| | - Chen Wang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jianshi Tang
- School of Integrated Circuits, Beijing National Research Center for Information Science and Technology (BNRist), Tsinghua University, Beijing 100084, People's Republic of China
- Beijing Innovation Center for Future Chips (ICFC), Tsinghua University, Beijing 100084, People's Republic of China
| | - Kai Liu
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China
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25
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Ding G, Yang B, Chen RS, Mo WA, Zhou K, Liu Y, Shang G, Zhai Y, Han ST, Zhou Y. Reconfigurable 2D WSe 2 -Based Memtransistor for Mimicking Homosynaptic and Heterosynaptic Plasticity. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2103175. [PMID: 34528382 DOI: 10.1002/smll.202103175] [Citation(s) in RCA: 22] [Impact Index Per Article: 7.3] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2021] [Revised: 07/30/2021] [Indexed: 06/13/2023]
Abstract
The mimicking of both homosynaptic and heterosynaptic plasticity using a high-performance synaptic device is important for developing human-brain-like neuromorphic computing systems to overcome the ever-increasing challenges caused by the conventional von Neumann architecture. However, the commonly used synaptic devices (e.g., memristors and transistors) require an extra modulate terminal to mimic heterosynaptic plasticity, and their capability of synaptic plasticity simulation is limited by the low weight adjustability. In this study, a WSe2 -based memtransistor for mimicking both homosynaptic and heterosynaptic plasticity is fabricated. By applying spikes on either the drain or gate terminal, the memtransistor can mimic common homosynaptic plasticity, including spiking rate dependent plasticity, paired pulse facilitation/depression, synaptic potentiation/depression, and filtering. Benefitting from the multi-terminal input and high adjustability, the resistance state number and linearity of the memtransistor can be improved by optimizing the conditions of the two inputs. Moreover, the device can successfully mimic heterosynaptic plasticity without introducing an extra terminal and can simultaneously offer versatile reconfigurability of excitatory and inhibitory plasticity. These highly adjustable and reconfigurable characteristics offer memtransistors more freedom of choice for tuning synaptic weight, optimizing circuit design, and building artificial neuromorphic computing systems.
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Affiliation(s)
- Guanglong Ding
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Baidong Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ruo-Si Chen
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Wen-Ai Mo
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Kui Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yang Liu
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Gang Shang
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Yongbiao Zhai
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Su-Ting Han
- Shenzhen Key Laboratory of Flexible Memory Materials and Devices, Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
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