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Zhao N, Song M, Zhang X, Xu W, Liu X. Nanodiamond Coating in Energy and Engineering Fields: Synthesis Methods, Characteristics, and Applications. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2401292. [PMID: 38726946 DOI: 10.1002/smll.202401292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/18/2024] [Revised: 04/19/2024] [Indexed: 10/04/2024]
Abstract
Nanodiamonds are metastable allotropes of carbon. Based on their high hardness, chemical inertness, high thermal conductivity, and wide bandgap, nanodiamonds are widely used in energy and engineering applications in the form of coatings, such as mechanical processing, nuclear engineering, semiconductors, etc., particularly focusing on the reinforcement in mechanical performance, corrosion resistance, heat transfer, and electrical behavior. In mechanical performance, nanodiamond coatings can elevate hardness and wear resistance, improve the efficiency of mechanical components, and concomitantly reduce friction, diminish maintenance costs, particularly under high-load conditions. Concerning chemical inertness and corrosion resistance, nanodiamond coatings are gradually becoming the preferred manufacturing material or surface modification material for equipment in harsh environments. As for heat transfer, the extremely high coefficient of thermal conductivity of nanodiamond coatings makes them one of the main surface modification materials for heat exchange equipment. The increase of nucleation sites results in excellent performance of nanodiamond coatings during the boiling heat transfer stage. Additionally, concerning electrical properties, nanodiamond coatings elevate the efficiency of solar cells and fuel cells, and great performance in electrochemical and electrocatalytic is found. This article will briefly describe the application and mechanism analysis of nanodiamonds in the above-mentioned fields.
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Affiliation(s)
- Ningkang Zhao
- College of Smart Energy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Meiqi Song
- College of Smart Energy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xifang Zhang
- College of Smart Energy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Wei Xu
- College of Smart Energy, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaojing Liu
- School of Nuclear Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
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2
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Yu X, Li Y, He R, Wen Y, Chen R, Xu B, Gao Y. Mechanical regulation to interfacial thermal transport in GaN/diamond heterostructures for thermal switch. NANOSCALE HORIZONS 2024; 9:1557-1567. [PMID: 39016031 DOI: 10.1039/d4nh00245h] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 07/18/2024]
Abstract
Gallium nitride offers an ideal material platform for next-generation high-power electronics devices, which enable a spectrum of applications. The thermal management of the ever-growing power density has become a major bottleneck in the performance, reliability, and lifetime of the devices. GaN/diamond heterostructures are usually adopted to facilitate heat dissipation, given the extraordinary thermal conduction properties of diamonds. However, thermal transport is limited by the interfacial conductance at the material interface between GaN and diamond, which is associated with significant mechanical stress at the atomic level. In this work, we investigate the effect of mechanical strain perpendicular to the GaN/diamond interface on the interfacial thermal conductance of heterostructures using full-atom non-equilibrium molecular dynamics simulations. We found that the heterostructure exhibits severe mechanical stress at the interface in the absence of loading, which is due to lattice mismatch. Upon tensile/compressive loading, the interfacial stress is more pronounced, and the strain is not identical across the interface owing to the contrasting elastic moduli of GaN and diamond. In addition, the interfacial thermal conductance can be notably enhanced and suppressed by tensile and compressive strains, respectively, leading to a 400% variation in thermal conductance. More detailed analyses reveal that the change in interfacial thermal conductance is related to the surface roughness and interfacial bonding strength, as described by a generalized relationship. Moreover, phonon analyses suggest that the unequal mechanical deformation under compressive strain in GaN and diamond induces different frequency shifts in the phonon spectra, leading to an enhancement in phonon overlapping energy, which promotes phonon transport at the interface and elevates the thermal conductance and vice versa for tensile strain. The effect of strain on interface thermal conductance was investigated at various temperatures. Based on the mechanical tunability of thermal conductance, we propose a conceptual design for a mechanical thermal switch that regulates thermal conductance with excellent sensitivity and high responsiveness. This study offers a fundamental understanding of how mechanical strain can adjust interface thermal conductance in GaN/diamond heterostructures with respect to mechanical stress, deformation, and phonon properties. These results and findings lay the theoretical foundation for designing thermal management devices in a strain environment and shed light on developing intelligent thermal devices by leveraging the interplay between mechanics and thermal transport.
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Affiliation(s)
- Xiaotong Yu
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Yifan Li
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Renjie He
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Yanwei Wen
- State Key Laboratory of Material Processing and Die and Mould Technology, School of Materials Science and Engineering, Huazhong University of Science and Technology, Wuhan, Hubei, 430074, China
| | - Rong Chen
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
| | - Baoxing Xu
- Department of Mechanical and Aerospace Engineering, University of Virginia, Charlottesville, VA 22904, USA.
| | - Yuan Gao
- State Key Laboratory of Digital Manufacturing Equipment and Technology, School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan, 430074, China.
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3
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Qi Z, Sun X, Sun Z, Wang Q, Zhang D, Liang K, Li R, Zou D, Li L, Wu G, Shen W, Liu S. Interfacial Optimization for AlN/Diamond Heterostructures via Machine Learning Potential Molecular Dynamics Investigation of the Mechanical Properties. ACS APPLIED MATERIALS & INTERFACES 2024; 16:27998-28007. [PMID: 38759105 DOI: 10.1021/acsami.4c06055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2024]
Abstract
AlN/diamond heterostructures hold tremendous promise for the development of next-generation high-power electronic devices due to their ultrawide band gaps and other exceptional properties. However, the poor adhesion at the AlN/diamond interface is a significant challenge that will lead to film delamination and device performance degradation. In this study, the uniaxial tensile failure of the AlN/diamond heterogeneous interfaces was investigated by molecular dynamics simulations based on a neuroevolutionary machine learning potential (NEP) model. The interatomic interactions can be successfully described by trained NEP, the reliability of which has been demonstrated by the prediction of the cleavage planes of AlN and diamond. It can be revealed that the annealing treatment can reduce the total potential energy by enhancing the binding of the C and N atoms at interfaces. The strain engineering of AlN also has an important impact on the mechanical properties of the interface. Furthermore, the influence of the surface roughness and interfacial nanostructures on the AlN/diamond heterostructures has been considered. It can be indicated that the combination of surface roughness reduction, AlN strain engineering, and annealing treatment can effectively result in superior and more stable interfacial mechanical properties, which can provide a promising solution to the optimization of mechanical properties, of ultrawide band gap semiconductor heterostructures.
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Affiliation(s)
- Zijun Qi
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Xiang Sun
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Zhanpeng Sun
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Qijun Wang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Dongliang Zhang
- School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
| | - Kang Liang
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Rui Li
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Diwei Zou
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
| | - Lijie Li
- College of Engineering, Swansea University, Swansea SA1 8EN, U.K
| | - Gai Wu
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
- Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan 430072, China
| | - Wei Shen
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
- Hubei Key Laboratory of Electronic Manufacturing and Packaging Integration, Wuhan University, Wuhan 430072, China
| | - Sheng Liu
- The Institute of Technological Sciences, Wuhan University, Wuhan 430072, China
- School of Power and Mechanical Engineering, Wuhan University, Wuhan 430072, China
- School of Mechanical Science and Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
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4
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Wang Z, Chen Y, Sheng B, Li J, Yao L, Yu Y, Song J, Yu T, Li Y, Pan H, Wang P, Wang X, Zhu L, Zhou B. Air-Promoted Light-Driven Hydrogen Production from Bioethanol over Core/Shell Cr 2O 3@GaN Nanoarchitecture. Angew Chem Int Ed Engl 2024; 63:e202400011. [PMID: 38409577 DOI: 10.1002/anie.202400011] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/01/2024] [Revised: 02/22/2024] [Accepted: 02/26/2024] [Indexed: 02/28/2024]
Abstract
Light-driven hydrogen production from biomass derivatives offers a path towards carbon neutrality. It is often however operated with the limitations of sluggish kinetics and severe coking. Herein, a disruptive air-promoted strategy is explored for efficient and durable light-driven hydrogen production from ethanol over a core/shell Cr2O3@GaN nanoarchitecture. The correlative computational and experimental investigations show ethanol is energetically favorable to be adsorbed on the Cr2O3@GaN interface, followed by dehydrogenation toward acetaldehyde and protons by photoexcited holes. The released protons are then consumed for H2 evolution by photogenerated electrons. Afterward, O2 can be evolved into active oxygen species and promote the deprotonation and C-C cleavage of the key C2 intermediate, thus significantly lowering the reaction energy barrier of hydrogen evolution and removing the carbon residual with inhibited overoxidation. Consequently, hydrogen is produced at a high rate of 76.9 mole H2 per gram Cr2O3@GaN per hour by only feeding ethanol, air, and light, leading to the achievement of a turnover number of 266,943,000 mole H2 per mole Cr2O3 over a long-term operation of 180 hours. Notably, an unprecedented light-to-hydrogen efficiency of 17.6 % is achieved under concentrated light illumination. The simultaneous generation of aldehyde from ethanol dehydrogenation enables the process more economically promising.
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Affiliation(s)
- Zhouzhou Wang
- Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
- Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan, 430079, China
| | - Yiqing Chen
- Department of Mining and Materials Engineering, McGill University, Montreal, QC H3A0C9, Canada
| | - Bowen Sheng
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE), Peking University, Beijing, 100871, China
| | - Jinglin Li
- Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Lin Yao
- China-UK Low Carbon College, Shanghai Jiao Tong University, Shanghai, 201306, China
| | - Ying Yu
- Institute of Nanoscience and Nanotechnology, College of Physical Science and Technology, Central China Normal University, Wuhan, 430079, China
| | - Jun Song
- Department of Mining and Materials Engineering, McGill University, Montreal, QC H3A0C9, Canada
| | - Tianqi Yu
- Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Yixin Li
- Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Hu Pan
- Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Ping Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE), Peking University, Beijing, 100871, China
| | - Xinqiang Wang
- State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Nano-Optoelectronics Frontier Center of Ministry of Education (NFC-MOE), Peking University, Beijing, 100871, China
- Yangtze Delta Institute of Optoelectronics, Peking University, Nantong, 226010, China
- Collaborative Innovation Center of Quantum Matter, School of Physics, Peking University, Beijing, 100871, China
| | - Lei Zhu
- Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Baowen Zhou
- Key Laboratory for Power Machinery and Engineering of Ministry of Education, Research Center for Renewable Synthetic Fuel, School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, China
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5
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Wu J, Zhou E, Huang A, Zhang H, Hu M, Qin G. Deep-potential enabled multiscale simulation of gallium nitride devices on boron arsenide cooling substrates. Nat Commun 2024; 15:2540. [PMID: 38528017 PMCID: PMC10963741 DOI: 10.1038/s41467-024-46806-7] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2022] [Accepted: 03/08/2024] [Indexed: 03/27/2024] Open
Abstract
High-efficient heat dissipation plays critical role for high-power-density electronics. Experimental synthesis of ultrahigh thermal conductivity boron arsenide (BAs, 1300 W m-1K-1) cooling substrates into the wide-bandgap semiconductor of gallium nitride (GaN) devices has been realized. However, the lack of systematic analysis on the heat transfer across the GaN-BAs interface hampers the practical applications. In this study, by constructing the accurate and high-efficient machine learning interatomic potentials, we perform multiscale simulations of the GaN-BAs heterostructures. Ultrahigh interfacial thermal conductance of 260 MW m-2K-1 is achieved, which lies in the well-matched lattice vibrations of BAs and GaN. The strong temperature dependence of interfacial thermal conductance is found between 300 to 450 K. Moreover, the competition between grain size and boundary resistance is revealed with size increasing from 1 nm to 1000 μm. Such deep-potential equipped multiscale simulations not only promote the practical applications of BAs cooling substrates in electronics, but also offer approach for designing advanced thermal management systems.
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Affiliation(s)
- Jing Wu
- State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China
- School of Energy and Power Engineering, Huazhong University of Science and Technology, Wuhan, 430074, Hubei, China
| | - E Zhou
- State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China
| | - An Huang
- State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Hongbin Zhang
- Institut für Materialwissenschaft, Technische Universität Darmstadt, Darmstadt, 64289, Germany
| | - Ming Hu
- Department of Mechanical Engineering, University of South Carolina, Columbia, SC, 29208, USA
| | - Guangzhao Qin
- State Key Laboratory of Advanced Design and Manufacturing Technology for Vehicle, College of Mechanical and Vehicle Engineering, Hunan University, Changsha, 410082, P. R. China.
- Research Institute of Hunan University in Chongqing, Chongqing, 401133, China.
- Greater Bay Area Institute for Innovation, Hunan University, Guangzhou, 511300, Guangdong, China.
- Key Laboratory of Computational Physical Sciences (Fudan University), Ministry of Education, Shanghai, China.
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6
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Delmas W, Jarzembski A, Bahr M, McDonald A, Hodges W, Lu P, Deitz J, Ziade E, Piontkowski ZT, Yates L. Thermal Transport and Mechanical Stress Mapping of a Compression Bonded GaN/Diamond Interface for Vertical Power Devices. ACS APPLIED MATERIALS & INTERFACES 2024; 16:11003-11012. [PMID: 38373710 DOI: 10.1021/acsami.3c17778] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/21/2024]
Abstract
Bonding diamond to the back side of gallium nitride (GaN) electronics has been shown to improve thermal management in lateral devices; however, engineering challenges remain with the bonding process and characterizing the bond quality for vertical device architectures. Here, integration of these two materials is achieved by room-temperature compression bonding centimeter-scale GaN and a diamond die via an intermetallic bonding layer of Ti/Au. Recent attempts at GaN/diamond bonding have utilized a modified surface activation bonding (SAB) method, which requires Ar fast atom bombardment immediately followed by bonding within the same tool under ultrahigh vacuum (UHV) conditions. The method presented here does not require a dedicated SAB tool yet still achieves bonding via a room-temperature metal-metal compression process. Imaging of the buried interface and the total bonding area is achieved via transmission electron microscopy (TEM) and confocal acoustic scanning microscopy (C-SAM), respectively. The thermal transport quality of the bond is extracted from spatially resolved frequency-domain thermoreflectance (FDTR) with the bonded areas boasting a thermal boundary conductance of >100 MW/m2·K. Additionally, Raman maps of GaN near the GaN-diamond interface reveal a low level of compressive stress, <80 MPa, in well-bonded regions. FDTR and Raman were coutilized to map these buried interfaces and revealed some poor thermally bonded areas bordered by high-stress regions, highlighting the importance of spatial sampling for a complete picture of bond quality. Overall, this work demonstrates a novel method for thermal management in vertical GaN devices that maintains low intrinsic stresses while boasting high thermal boundary conductances.
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Affiliation(s)
- William Delmas
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Amun Jarzembski
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Matthew Bahr
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Anthony McDonald
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Wyatt Hodges
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Ping Lu
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Julia Deitz
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | - Elbara Ziade
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
| | | | - Luke Yates
- Sandia National Laboratories, Albuquerque, New Mexico 87123, United States
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7
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Hua R, Jiang Y, Shi L, Liang S, Zhang C, Song Y, Dong RY, Dong Y. Significant thermal rectification induced by phonon mismatch of functional groups in a single-molecule junction. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 36:135401. [PMID: 38096577 DOI: 10.1088/1361-648x/ad15c5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Accepted: 12/14/2023] [Indexed: 12/28/2023]
Abstract
Single-molecule junctions (SMJs) may bring exotic physical effects. In this work, a significant thermal rectification effect is observed in a cross-dimensional system, comprising a diamond, a single-molecule junction, and a carbon nanotube (CNT). The molecular dynamics simulations indicate that the interfacial thermal resistance varies with the direction of heat flow, the orientation of the crystal planes of the diamond, and the length of the CNT. We find that the thermal rectification ratio escalates with the length of the CNT, achieving a peak value of 730% with the CNT length of 200 nm. A detailed analysis of phonon vibrations suggests that the primary cause of thermal rectification is the mismatched vibrations between the biphenyl and carbonyl groups. This discovery may offer theoretical insights for both the experimental exploration and practical application of SMJs in efficient thermal management strategy for high power and highly integrated chips.
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Affiliation(s)
- Renjie Hua
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China
| | - Yunlei Jiang
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China
| | - Lei Shi
- Hangzhou Zhongneng Photoeletricity Technology Co., Ltd, Hangzhou 310018, People's Republic of China
| | - Suxia Liang
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China
| | - Chi Zhang
- School of Physics and Optoelectronic Engineering, Hangzhou Institute for Advanced Study, University of Chinese Academy of Sciences, Hangzhou 310024, People's Republic of China
| | - Yingru Song
- Department of Mechanical Engineering, William Marsh Rice University, Houston, TX 77005, United States of America
| | - Ruo-Yu Dong
- School of Astronautics, Beihang University, Beijing 102206, People's Republic of China
- Aircraft and Propulsion Laboratory, Ningbo Institute of Technology, Beihang University, Ningbo 315100, People's Republic of China
| | - Yuan Dong
- School of Mechanical Engineering, Hangzhou Dianzi University, Hangzhou 310018, People's Republic of China
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8
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Zhan T, Xu M, Cao Z, Zheng C, Kurita H, Narita F, Wu YJ, Xu Y, Wang H, Song M, Wang W, Zhou Y, Liu X, Shi Y, Jia Y, Guan S, Hanajiri T, Maekawa T, Okino A, Watanabe T. Effects of Thermal Boundary Resistance on Thermal Management of Gallium-Nitride-Based Semiconductor Devices: A Review. MICROMACHINES 2023; 14:2076. [PMID: 38004933 PMCID: PMC10673006 DOI: 10.3390/mi14112076] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/28/2023] [Revised: 10/30/2023] [Accepted: 11/04/2023] [Indexed: 11/26/2023]
Abstract
Wide-bandgap gallium nitride (GaN)-based semiconductors offer significant advantages over traditional Si-based semiconductors in terms of high-power and high-frequency operations. As it has superior properties, such as high operating temperatures, high-frequency operation, high breakdown electric field, and enhanced radiation resistance, GaN is applied in various fields, such as power electronic devices, renewable energy systems, light-emitting diodes, and radio frequency (RF) electronic devices. For example, GaN-based high-electron-mobility transistors (HEMTs) are used widely in various applications, such as 5G cellular networks, satellite communication, and radar systems. When a current flows through the transistor channels during operation, the self-heating effect (SHE) deriving from joule heat generation causes a significant increase in the temperature. Increases in the channel temperature reduce the carrier mobility and cause a shift in the threshold voltage, resulting in significant performance degradation. Moreover, temperature increases cause substantial lifetime reductions. Accordingly, GaN-based HEMTs are operated at a low power, although they have demonstrated high RF output power potential. The SHE is expected to be even more important in future advanced technology designs, such as gate-all-around field-effect transistor (GAAFET) and three-dimensional (3D) IC architectures. Materials with high thermal conductivities, such as silicon carbide (SiC) and diamond, are good candidates as substrates for heat dissipation in GaN-based semiconductors. However, the thermal boundary resistance (TBR) of the GaN/substrate interface is a bottleneck for heat dissipation. This bottleneck should be reduced optimally to enable full employment of the high thermal conductivity of the substrates. Here, we comprehensively review the experimental and simulation studies that report TBRs in GaN-on-SiC and GaN-on-diamond devices. The effects of the growth methods, growth conditions, integration methods, and interlayer structures on the TBR are summarized. This study provides guidelines for decreasing the TBR for thermal management in the design and implementation of GaN-based semiconductor devices.
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Affiliation(s)
- Tianzhuo Zhan
- Graduate School of Interdisciplinary New Science, Toyo University, 2100 Kujirai, Kawagoe 350-8585, Saitama, Japan; (S.G.); (T.H.); (T.M.)
- Faculty of Science and Engineering, Waseda University, 3-4-1 Ookubo, Shinjuku-ku 169-8555, Tokyo, Japan; (Z.C.); (C.Z.); (T.W.)
| | - Mao Xu
- School of Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Tokyo, Japan; (M.X.); (A.O.)
| | - Zhi Cao
- Faculty of Science and Engineering, Waseda University, 3-4-1 Ookubo, Shinjuku-ku 169-8555, Tokyo, Japan; (Z.C.); (C.Z.); (T.W.)
| | - Chong Zheng
- Faculty of Science and Engineering, Waseda University, 3-4-1 Ookubo, Shinjuku-ku 169-8555, Tokyo, Japan; (Z.C.); (C.Z.); (T.W.)
| | - Hiroki Kurita
- Graduate School of Environmental Studies, Tohoku University, 6-6-02 Aoba-yama, Sendai 980-8579, Miyagi, Japan; (H.K.); (F.N.)
| | - Fumio Narita
- Graduate School of Environmental Studies, Tohoku University, 6-6-02 Aoba-yama, Sendai 980-8579, Miyagi, Japan; (H.K.); (F.N.)
| | - Yen-Ju Wu
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Ibaraki, Japan; (Y.-J.W.); (Y.X.)
| | - Yibin Xu
- National Institute for Materials Science, 1-2-1 Sengen, Tsukuba 305-0047, Ibaraki, Japan; (Y.-J.W.); (Y.X.)
| | - Haidong Wang
- School of Aerospace Engineering, Tsinghua University, Beijing 100084, China;
| | - Mengjie Song
- School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China; (M.S.); (W.W.)
| | - Wei Wang
- School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081, China; (M.S.); (W.W.)
| | - Yanguang Zhou
- School of Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong SAR, China;
| | - Xuqing Liu
- Department of Materials, University of Manchester, Manchester M13 9PL, UK;
| | - Yu Shi
- School of Design, University of Leeds, Woodhouse, Leeds LS2 9JT, UK;
| | - Yu Jia
- School of Engineering and Applied Science, Aston University, Birmingham B4 7ET, UK;
| | - Sujun Guan
- Graduate School of Interdisciplinary New Science, Toyo University, 2100 Kujirai, Kawagoe 350-8585, Saitama, Japan; (S.G.); (T.H.); (T.M.)
| | - Tatsuro Hanajiri
- Graduate School of Interdisciplinary New Science, Toyo University, 2100 Kujirai, Kawagoe 350-8585, Saitama, Japan; (S.G.); (T.H.); (T.M.)
| | - Toru Maekawa
- Graduate School of Interdisciplinary New Science, Toyo University, 2100 Kujirai, Kawagoe 350-8585, Saitama, Japan; (S.G.); (T.H.); (T.M.)
| | - Akitoshi Okino
- School of Engineering, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8502, Tokyo, Japan; (M.X.); (A.O.)
| | - Takanobu Watanabe
- Faculty of Science and Engineering, Waseda University, 3-4-1 Ookubo, Shinjuku-ku 169-8555, Tokyo, Japan; (Z.C.); (C.Z.); (T.W.)
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9
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Cheng Z, Liang J, Kawamura K, Zhou H, Asamura H, Uratani H, Tiwari J, Graham S, Ohno Y, Nagai Y, Feng T, Shigekawa N, Cahill DG. High thermal conductivity in wafer-scale cubic silicon carbide crystals. Nat Commun 2022; 13:7201. [PMID: 36418359 PMCID: PMC9684120 DOI: 10.1038/s41467-022-34943-w] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/03/2022] [Accepted: 11/14/2022] [Indexed: 11/27/2022] Open
Abstract
High thermal conductivity electronic materials are critical components for high-performance electronic and photonic devices as both active functional materials and thermal management materials. We report an isotropic high thermal conductivity exceeding 500 W m-1K-1 at room temperature in high-quality wafer-scale cubic silicon carbide (3C-SiC) crystals, which is the second highest among large crystals (only surpassed by diamond). Furthermore, the corresponding 3C-SiC thin films are found to have record-high in-plane and cross-plane thermal conductivity, even higher than diamond thin films with equivalent thicknesses. Our results resolve a long-standing puzzle that the literature values of thermal conductivity for 3C-SiC are lower than the structurally more complex 6H-SiC. We show that the observed high thermal conductivity in this work arises from the high purity and high crystal quality of 3C-SiC crystals which avoids the exceptionally strong defect-phonon scatterings. Moreover, 3C-SiC is a SiC polytype which can be epitaxially grown on Si. We show that the measured 3C-SiC-Si thermal boundary conductance is among the highest for semiconductor interfaces. These findings provide insights for fundamental phonon transport mechanisms, and suggest that 3C-SiC is an excellent wide-bandgap semiconductor for applications of next-generation power electronics as both active components and substrates.
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Affiliation(s)
- Zhe Cheng
- grid.35403.310000 0004 1936 9991Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
| | - Jianbo Liang
- Department of Physics and Electronics, Osaka Metropolitan University, Sugimoto 3-3-138, Sumiyoshi, Osaka, 558-8585 Japan
| | - Keisuke Kawamura
- grid.509474.bSIC Division, Air Water Inc., 2290-1 Takibe, Toyoshina Azumino, Nagano, 399-8204 Japan
| | - Hao Zhou
- grid.223827.e0000 0001 2193 0096Department of Mechanical Engineering, University of Utah, Salt Lake City, UT 84112 USA
| | - Hidetoshi Asamura
- Specialty Materials Dept., Electronics Unit, Air Water Inc. 4007-3 Yamato, Azusagawa, Nagano 390-1701 Japan
| | - Hiroki Uratani
- grid.509474.bSIC Division, Air Water Inc., 2290-1 Takibe, Toyoshina Azumino, Nagano, 399-8204 Japan
| | - Janak Tiwari
- grid.223827.e0000 0001 2193 0096Department of Mechanical Engineering, University of Utah, Salt Lake City, UT 84112 USA
| | - Samuel Graham
- grid.213917.f0000 0001 2097 4943George W. Woodruff School of Mechanical Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA
| | - Yutaka Ohno
- grid.69566.3a0000 0001 2248 6943Institute for Materials Research, Tohoku University, 2145-2 Narita, Oarai, Ibaraki 311-1313 Japan
| | - Yasuyoshi Nagai
- grid.69566.3a0000 0001 2248 6943Institute for Materials Research, Tohoku University, 2145-2 Narita, Oarai, Ibaraki 311-1313 Japan
| | - Tianli Feng
- grid.223827.e0000 0001 2193 0096Department of Mechanical Engineering, University of Utah, Salt Lake City, UT 84112 USA
| | - Naoteru Shigekawa
- Department of Physics and Electronics, Osaka Metropolitan University, Sugimoto 3-3-138, Sumiyoshi, Osaka, 558-8585 Japan
| | - David G. Cahill
- grid.35403.310000 0004 1936 9991Department of Materials Science and Engineering and Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL 61801 USA
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Sznajder M, Hrytsak R. DFT-Based Studies on Carbon Adsorption on the wz-GaN Surfaces and the Influence of Point Defects on the Stability of the Diamond-GaN Interfaces. MATERIALS 2021; 14:ma14216532. [PMID: 34772058 PMCID: PMC8585404 DOI: 10.3390/ma14216532] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 10/04/2021] [Revised: 10/22/2021] [Accepted: 10/26/2021] [Indexed: 11/26/2022]
Abstract
Integration of diamond with GaN-based high-electron-mobility transistors improves thermal management, influencing the reliability, performance, and lifetime of GaN-based devices. The current GaN-on-diamond integration technology requires precise interface engineering and appropriate interfacial layers. In this respect, we performed first principles calculation on the stability of diamond–GaN interfaces in the framework of density functional theory. Initially, some stable adsorption sites of C atoms were found on the Ga- and N-terminated surfaces that enabled the creation of a flat carbon monolayer. Following this, a model of diamond–GaN heterojunction with the growth direction [111] was constructed based on carbon adsorption results on GaN{0001} surfaces. Finally, we demonstrate the ways of improving the energetic stability of diamond–GaN interfaces by means of certain reconstructions induced by substitutional dopants present in the topmost GaN substrate’s layer.
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Affiliation(s)
- Malgorzata Sznajder
- Institute of Physics, College of Natural Sciences, University of Rzeszow, Pigonia 1, 35-959 Rzeszow, Poland;
- Correspondence:
| | - Roman Hrytsak
- Institute of Physics, College of Natural Sciences, University of Rzeszow, Pigonia 1, 35-959 Rzeszow, Poland;
- Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, 01-142 Warsaw, Poland
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