Oxygen Vacancy Injection as a Pathway to Enhancing Electromechanical Response in Ferroelectrics

Properties of Sn-Doped PBZT Ferroelectric Ceramics Sintered by Hot-Pressing Method

This work investigated the structure, microstructure, and ferroelectric and dielectric behavior of (Pb0.97Ba0.03)(Zr0.98Ti0.02)1-xSnxO3 (PBZT_xSn) solid solution with variable tin content in the range x = 0.00-0.08. Synthesis was carried out using the powder calcination method, and sintering was carried out using the hot-pressing method. For all the PBZT_xSn samples at room temperature, X-ray diffractograms confirmed the presence of an orthorhombic (OR) crystal structure with space group Pnnm, and the microstructure is characterized by densely packed and properly shaped grains with an average size of 1.36 µm to 1.73 µm. At room temperature, PBZT_xSn materials have low permittivity values ε' ranging from 265 to 275, whereas, at the ferroelectric-paraelectric phase transition temperature (RE-C), the permittivity is high (from 8923 to 12,141). The increase in the tin dopant in PBZT_xSn lowers permittivity and dielectric loss and changes the scope of occurrence of phase transitions. The occurring dispersion of the dielectric constant and dielectric loss at low frequencies, related to the Maxwell-Wagner behavior, decreases with increasing tin content in the composition of PBZT_xSn. Temperature studies of the dielectric and ferroelectric properties revealed anomalies related to the phase transitions occurring in the PBZT_xSn material. With increasing temperature in PBZT_xSn, phase transitions occur from orthorhombic (OR) to rhombohedral (RE) and cubic (C). The cooling cycle shifts the temperatures of the phase transitions towards lower temperatures. The test results were confirmed by XRD Rietveld analysis at different temperatures. The beneficial dielectric and ferroelectric properties suggest that the PBZT_xSn materials are suitable for micromechatronic applications as pulse capacitors or actuator elements.

Shaping single crystalline BaTiO3nanostructures by focused neon or helium ion milling

The realization of perovskite oxide nanostructures with controlled shape and dimensions remains a challenge. Here, we investigate the use of helium and neon focused ion beam (FIB) milling in an ion microscope to fabricate BaTiO3nanopillars of sub-500 nm in diameter starting from BaTiO3(001) single crystals. Irradiation of BaTiO3with He ions induces the formation of nanobubbles inside the material, eventually leading to surface swelling and blistering. Ne-FIB is shown to be suitable for milling without inducing surface swelling. The resulting structures are defect-free single crystal nanopillars, which are enveloped, on the top and lateral sidewalls, by a point defect-rich crystalline region and an outer Ne-rich amorphous layer. The amorphous layer can be selectively etched by dipping in diluted HF. The geometry and beam-induced damage of the milled nanopillars depend strongly on the patterning parameters and can be well controlled. Ne ion milling is shown to be an effective method to rapidly prototype BaTiO3crystalline nanostructures.

Giant electrostriction-like response from defective non-ferroelectric epitaxial BaTiO3 integrated on Si (100)

Lead-free, silicon compatible materials showing large electromechanical responses comparable to, or better than conventional relaxor ferroelectrics, are desirable for various nanoelectromechanical devices and applications. Defect-engineered electrostriction has recently been gaining popularity to obtain enhanced electromechanical responses at sub 100 Hz frequencies. Here, we report record values of electrostrictive strain coefficients (M31) at frequencies as large as 5 kHz (1.04×10-14 m2/V2 at 1 kHz, and 3.87×10-15 m2/V2 at 5 kHz) using A-site and oxygen-deficient barium titanate thin-films, epitaxially integrated onto Si. The effect is robust and retained upon cycling upto 6 million times. Our perovskite films are non-ferroelectric, exhibit a different symmetry compared to stoichiometric BaTiO3 and are characterized by twin boundaries and nano polar-like regions. We show that the dielectric relaxation arising from the defect-induced features correlates well with the observed giant electrostriction-like response. These films show large coefficient of thermal expansion (2.36 × 10-5/K), which along with the giant M31 implies a considerable increase in the lattice anharmonicity induced by the defects. Our work provides a crucial step forward towards formulating guidelines to engineer large electromechanical responses even at higher frequencies in lead-free thin films.

Piezoelectricity ameliorates high-valent iron oxo species production in peroxymonosulfate activation for refractory atrazine remediation

Over the past few years, high-valent iron oxo species (Fe(IV)) have shown considerable promise. However, an improved solution is needed for the bottleneck of unsatisfactory electron transfer efficiency in Fe-based catalyst/PMS systems. In this study, Enteromorpha-derived biochar was pyrolyzed with iron and barium titanate (FeBCBa). Under ultrasonic treatment, it removes 94.5% of atrazine (10 mg/L) within 60 min, and is environmentally friendly. BaTiO3's piezoelectricity enhances Fe(IV) production in FeBCBa, resulting in superior performance. In the ultrasonic condition, the apparent reaction rate was 1.42 times higher than in the non-ultrasonic condition. Using density functional theory calculations, it can be shown that due to the Fe dopant, electrons in ATZ's LUMO are more easily transferred to the catalyst's HOMO, which is beneficial for ATZ removal. The results of this study provide new guidance for constructing stable and efficient catalysts for environmental remediation.

The Effect of Chemical Environment and Temperature on the Domain Structure of Free-Standing BaTiO3 via In Situ STEM

Ferroelectrics, due to their polar nature and reversible switching, can be used to dynamically control surface chemistry for catalysis, chemical switching, and other applications such as water splitting. However, this is a complex phenomenon where ferroelectric domain orientation and switching are intimately linked to surface charges. In this work, the temperature-induced domain behavior of ferroelectric-ferroelastic domains in free-standing BaTiO3 films under different gas environments, including vacuum and oxygen-rich, is studied by in situ scanning transmission electron microscopy (STEM). An automated pathway to statistically disentangle and detect domain structure transformations using deep autoencoders, providing a pathway towards real-time analysis is also established. These results show a clear difference in the temperature at which phase transition occurs and the domain behavior between various environments, with a peculiar domain reconfiguration at low temperatures, from a-c to a-a at ≈60 °C. The vacuum environment exhibits a rich domain structure, while under the oxidizing environment, the domain structure is largely suppressed. The direct visualization provided by in situ gas and heating STEM allows to investigate the influence of external variables such as gas, pressure, and temperature, on oxide surfaces in a dynamic manner, providing invaluable insights into the intricate surface-screening mechanisms in ferroelectrics.

Ferroelectricity in hafnia controlled via surface electrochemical state

Ferroelectricity in binary oxides including hafnia and zirconia has riveted the attention of the scientific community due to the highly unconventional physical mechanisms and the potential for the integration of these materials into semiconductor workflows. Over the last decade, it has been argued that behaviours such as wake-up phenomena and an extreme sensitivity to electrode and processing conditions suggest that ferroelectricity in these materials is strongly influenced by other factors, including electrochemical boundary conditions and strain. Here we argue that the properties of these materials emerge due to the interplay between the bulk competition between ferroelectric and structural instabilities, similar to that in classical antiferroelectrics, coupled with non-local screening mediated by the finite density of states at surfaces and internal interfaces. Via the decoupling of electrochemical and electrostatic controls, realized via environmental and ultra-high vacuum piezoresponse force microscopy, we show that these materials demonstrate a rich spectrum of ferroic behaviours including partial-pressure-induced and temperature-induced transitions between ferroelectric and antiferroelectric behaviours. These behaviours are consistent with an antiferroionic model and suggest strategies for hafnia-based device optimization.

Establishing a Relationship between the Piezoelectric Response and Oxygen Vacancies in Lead-Free Piezoelectrics

BiFeO₃-BaTiO₃ (BF-BT)-based lead-free piezoceramics are desired materials for high-temperature applications of piezoelectric sensors with a high Curie temperature and good piezoelectric properties. Recent studies have shown that oxygen vacancies have a significant effect on electrostrain and piezoelectric properties. Interestingly, two different phenomena exist, i.e., the increase in piezoelectric properties is often associated with a decrease in the concentration of oxygen vacancies, while the increase in electrostrain is often associated with an increase in the concentration of oxygen vacancies. Especially, for BF-based ceramics, the physical mechanisms related to property differences caused by oxygen vacancies are rarely reported, which needs further exploration. Here, two ceramics with differences in their oxygen vacancy concentrations are designed. Based on Rayleigh analysis, thermal/electric field-induced domain response (ferroelectric scaling), and macro-microstructural characterization, we can conclude that the transient piezoelectric response and the aging process are significantly affected by the oxygen vacancy concentration. In other words, the increasing concentration of oxygen vacancies in BF-BT ceramics enhances the reversible piezoelectric response contributed by lattice distortion and strengthens the response of domain switching and domain wall motion to electric and thermal fields but deteriorates their aging behavior, which leads to the degradation of piezoelectric performance. Besides, polarization saturation and defect pegging significantly improve the temperature stability of the strain.

Lessons from hafnium dioxide-based ferroelectrics

A bit more than a decade after the first report of ferroelectric switching in hafnium dioxide-based ultrathin layers, this family of materials continues to elicit interest. There is ample consensus that the observed switching does not obey the same mechanisms present in most other ferroelectrics, but its exact nature is still under debate. Next to this fundamental relevance, a large research effort is dedicated to optimizing the use of this extraordinary material, which already shows direct integrability in current semiconductor chips and potential for scalability to the smallest node architectures, in smaller and more reliable devices. Here we present a perspective on how, despite our incomplete understanding and remaining device endurance issues, the lessons learned from hafnium dioxide-based ferroelectrics offer interesting avenues beyond ferroelectric random-access memories and field-effect transistors. We hope that research along these other directions will stimulate discoveries that, in turn, will mitigate some of the current issues. Extending the scope of available systems will eventually enable the way to low-power electronics, self-powered devices and energy-efficient information processing.