1
|
Yan Z, Xu N, Deng S. AC Characteristics of van der Waals Bipolar Junction Transistors Using an MoS 2/WSe 2/MoS 2 Heterostructure. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:851. [PMID: 38786807 PMCID: PMC11123697 DOI: 10.3390/nano14100851] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/24/2024] [Revised: 05/04/2024] [Accepted: 05/11/2024] [Indexed: 05/25/2024]
Abstract
Two-dimensional layered materials, characterized by their atomically thin thicknesses and surfaces that are free of dangling bonds, hold great promise for fabricating ultrathin, lightweight, and flexible bipolar junction transistors (BJTs). In this paper, a van der Waals (vdW) BJT was fabricated by vertically stacking MoS2, WSe2, and MoS2 flakes in sequence. The AC characteristics of the vdW BJT were studied for the first time, in which a maximum common emitter voltage gain of around 3.5 was observed. By investigating the time domain characteristics of the device under various operating frequencies, the frequency response of the device was summarized, which experimentally proved that the MoS2/WSe2/MoS2 BJT has voltage amplification capability in the 0-200 Hz region. In addition, the phase response of the device was also investigated. A phase inversion was observed in the low-frequency range. As the operating frequency increases, the relative phase between the input and output signals gradually shifts until it is in phase at frequencies exceeding 2.3 kHz. This work demonstrates the signal amplification applications of the vdW BJTs for neuromorphic computing and wearable healthcare devices.
Collapse
Affiliation(s)
| | | | - Shaozhi Deng
- State Key Laboratory of Optoelectronic Materials and Technologies, Guangdong Province Key Laboratory of Display Material and Technology, School of Electronics and Information Technology, Sun Yat-sen University, Guangzhou 510275, China; (Z.Y.); (N.X.)
| |
Collapse
|
2
|
Mei T, Liu W, Xu G, Chen Y, Wu M, Wang L, Xiao K. Ionic Transistors. ACS NANO 2024. [PMID: 38285731 DOI: 10.1021/acsnano.3c06190] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 01/31/2024]
Abstract
Biological voltage-gated ion channels, which behave as life's transistors, regulate ion transport precisely and selectively through atomic-scale selectivity filters to sustain important life activities. By this inspiration, voltage-adaptable ionic transistors that use ions as signal carriers may provide an alternative information processing unit beyond solid-state electronic devices. This review provides a comprehensive overview of the first generation of biomimetic ionic transistors, including their operating mechanisms, device architecture development, and property characterizations. Despite its infancy, significant progress has been made in the applications of ionic transistors in fields such as DNA detection, drug delivery, and ionic circuits. Challenges and prospects of full exploitation of ionic transistors for a broad spectrum of practical applications are also discussed.
Collapse
Affiliation(s)
- Tingting Mei
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Wenchao Liu
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Guoheng Xu
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Yuanxia Chen
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Minghui Wu
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Li Wang
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| | - Kai Xiao
- Guangdong Provincial Key Laboratory of Advanced Biomaterials, Department of Biomedical Engineering, Institute of Innovative Materials, Southern University of Science and Technology, Southern University of Science and Technology, Shenzhen 518055, P.R. China
| |
Collapse
|
3
|
Aftab S, Hussain S, Al-Kahtani AA. Latest Innovations in 2D Flexible Nanoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301280. [PMID: 37104492 DOI: 10.1002/adma.202301280] [Citation(s) in RCA: 6] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/09/2023] [Revised: 03/30/2023] [Indexed: 06/19/2023]
Abstract
2D materials with dangling-bond-free surfaces and atomically thin layers have been shown to be capable of being incorporated into flexible electronic devices. The electronic and optical properties of 2D materials can be tuned or controlled in other ways by using the intriguing strain engineering method. The latest and encouraging techniques in regard to creating flexible 2D nanoelectronics are condensed in this review. These techniques have the potential to be used in a wider range of applications in the near and long term. It is possible to use ultrathin 2D materials (graphene, BP, WTe2 , VSe2 etc.) and 2D transition metal dichalcogenides (2D TMDs) in order to enable the electrical behavior of the devices to be studied. A category of materials is produced on smaller scales by exfoliating bulk materials, whereas chemical vapor deposition (CVD) and epitaxial growth are employed on larger scales. This overview highlights two distinct requirements, which include from a single semiconductor or with van der Waals heterostructures of various nanomaterials. They include where strain must be avoided and where it is required, such as solutions to produce strain-insensitive devices, and such as pressure-sensitive outcomes, respectively. Finally, points-of-view about the current difficulties and possibilities in regard to using 2D materials in flexible electronics are provided.
Collapse
Affiliation(s)
- Sikandar Aftab
- Department of Intelligent Mechatronics Engineering, Sejong University, Seoul, 05006, South Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul, 05006, South Korea
| | - Abdullah A Al-Kahtani
- Chemistry Department, Collage of Science, King Saud University, P. O. Box 2455, Riyadh, 11451, Saudi Arabia
| |
Collapse
|
4
|
Lu Q, Zhao Y, Huang L, An J, Zheng Y, Yap EH. Low-Dimensional-Materials-Based Flexible Artificial Synapse: Materials, Devices, and Systems. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:373. [PMID: 36770333 PMCID: PMC9921566 DOI: 10.3390/nano13030373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 12/12/2022] [Revised: 01/10/2023] [Accepted: 01/15/2023] [Indexed: 06/18/2023]
Abstract
With the rapid development of artificial intelligence and the Internet of Things, there is an explosion of available data for processing and analysis in any domain. However, signal processing efficiency is limited by the Von Neumann structure for the conventional computing system. Therefore, the design and construction of artificial synapse, which is the basic unit for the hardware-based neural network, by mimicking the structure and working mechanisms of biological synapses, have attracted a great amount of attention to overcome this limitation. In addition, a revolution in healthcare monitoring, neuro-prosthetics, and human-machine interfaces can be further realized with a flexible device integrating sensing, memory, and processing functions by emulating the bionic sensory and perceptual functions of neural systems. Until now, flexible artificial synapses and related neuromorphic systems, which are capable of responding to external environmental stimuli and processing signals efficiently, have been extensively studied from material-selection, structure-design, and system-integration perspectives. Moreover, low-dimensional materials, which show distinct electrical properties and excellent mechanical properties, have been extensively employed in the fabrication of flexible electronics. In this review, recent progress in flexible artificial synapses and neuromorphic systems based on low-dimensional materials is discussed. The potential and the challenges of the devices and systems in the application of neuromorphic computing and sensory systems are also explored.
Collapse
Affiliation(s)
- Qifeng Lu
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Yinchao Zhao
- School of CHIPS, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Long Huang
- School of Intelligent Manufacturing Ecosystem, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Jiabao An
- School of Intelligent Manufacturing Ecosystem, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Yufan Zheng
- School of Intelligent Manufacturing Ecosystem, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| | - Eng Hwa Yap
- School of Robotics, XJTLU Entrepreneur College (Taicang), Xi’an Jiaotong-Liverpool University, 111 Taicang Avenue, Taicang, Suzhou 215488, China
| |
Collapse
|
5
|
Witkowski M, Starowicz Z, Zięba A, Adamczyk-Cieślak B, Socha RP, Szawcow O, Kołodziej G, Haras M, Ostapko J. The atomic layer deposition (ALD) synthesis of copper-tin sulfide thin films using low-cost precursors. NANOTECHNOLOGY 2022; 33:505603. [PMID: 36075187 DOI: 10.1088/1361-6528/ac9065] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2022] [Accepted: 09/08/2022] [Indexed: 06/15/2023]
Abstract
In this work we demonstrated the process of co-deposition of copper-tin sulfide species by the atomic layer deposition (ALD) technique using all-low-cost precursors. For the deposition of tin species, the tin(IV) chloride SnCl4was used successfully for the first time in the ALD process. Moreover, we showed that the successful deposition of the tin sulfide component was conditioned by the pre-deposition of CuSxlayer. The co-deposition of copper and tin sulfides components at 150 °C resulted in the in-process formation of the film containing Cu2SnS3, Cu3SnS4andπ-SnS phases. The process involving only tin precursor and H2S did not produce the SnSxspecies. The spectroscopic characteristic of the obtained materials were confronted with the literature survey, allowing us to discuss the methodology of the determination of ternary and quaternary sulfides purity by Raman spectroscopy. Moreover, the material characterisation with respect to the morphology (SEM), phase composition (XRD), surface chemical states (XPS), optical properties (UV-vis-NIR spectroscopy) and electric (Hall measurements) properties were provided. Finally, the obtained material was used for the formation of the p-n junction revealing the rectifyingI-Vcharacteristics.
Collapse
Affiliation(s)
- Marcin Witkowski
- University of Warsaw, Faculty of Chemistry, Pasteura 1, 02-093 Warsaw, Poland
| | - Zbigniew Starowicz
- Polish Academy of Sciences, Institute of Metallurgy and Materials Science Polish Academy of Sciences, Reymonta 25, 30-059 Cracow, Poland
| | - Adam Zięba
- CBRTP SA Research and Development Center of Technology for Industry, Waryńskiego 3A, 00-645 Warsaw, Poland
| | - Bogusława Adamczyk-Cieślak
- Warsaw University of Technology, Faculty of Materials Science and Engineering, Wołoska 141, 02-507 Warsaw, Poland
| | - Robert Piotr Socha
- CBRTP SA Research and Development Center of Technology for Industry, Waryńskiego 3A, 00-645 Warsaw, Poland
| | - Oliwia Szawcow
- CBRTP SA Research and Development Center of Technology for Industry, Waryńskiego 3A, 00-645 Warsaw, Poland
| | - Grzegorz Kołodziej
- CBRTP SA Research and Development Center of Technology for Industry, Waryńskiego 3A, 00-645 Warsaw, Poland
| | - Maciej Haras
- Polish Academy of Sciences, Institute of High Pressure Physics, Centre for Terahertz Research and Applications (CENTERA), Sokołowska 29/37, 01-142 Warsaw, Poland
- Warsaw University of Technology, Centre for Advanced Materials and Technologies CEZAMAT, Poleczki 19, 02-822 Warsaw, Poland
| | - Jakub Ostapko
- CBRTP SA Research and Development Center of Technology for Industry, Waryńskiego 3A, 00-645 Warsaw, Poland
| |
Collapse
|
6
|
Wang ZP, Xie P, Mao JY, Wang R, Yang JQ, Feng Z, Zhou Y, Kuo CC, Han ST. The floating body effect of a WSe 2 transistor with volatile memory performance. MATERIALS HORIZONS 2022; 9:1878-1887. [PMID: 35726680 DOI: 10.1039/d2mh00151a] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
The floating body effect in Meta-Stable-Dip RAM (MSDRAM) has been broadly employed in implementing single-transistor capacitor-less (1T0C) dynamic random access memory (DRAM) cells to break through the limitation of finite size reduction of peripheral capacitors. However, the majority of them were broadly demonstrated in conventional CMOS technology, while emerging semiconductor systems are rarely explored. Here, we creatively explore exfoliated multilayer tungsten diselenide (WSe2) for the application of 1T0C DRAM, breaking the limitation of channel thickness in the traditional architecture. Through the comparison of the electrical characteristics among three dual-gate transistors with different lengths of top-gate, we demonstrated the essential role of the floating body effect in achieving the function of 1T0C DRAM displaying two distinct states that are differentiated by hole population within the floating body. Moreover, according to the analysis of in situ electrostatic force microscopy (EFM) measurements and theoretical calculation via density functional theory (DFT), the injection of holes through band-to-band (B2B) tunneling can be ascribed to the effectively electrostatic modulation. These consequences prove our innovative concept to achieve the function of 1T0C DRAM through employing the ML WSe2, which is a vital step toward the breakthrough of the inherent limitations of DRAM cells.
Collapse
Affiliation(s)
- Zhan-Peng Wang
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Peng Xie
- Institute of Microscale Optoelectronics, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Jing-Yu Mao
- Department of Physics, National University of Singapore, Singapore, 117542, Singapore
| | - Ruopeng Wang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Jia-Qin Yang
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
| | - Zihao Feng
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Ye Zhou
- Institute for Advanced Study, Shenzhen University, Shenzhen, 518060, P. R. China
| | - Chi-Ching Kuo
- Institute of Organic and Polymeric Materials, Research and Development Center of Smart Textile Technology, National Taipei University of Technology, Taipei 10608, Taiwan.
| | - Su-Ting Han
- College of Electronics and Information Engineering, Shenzhen University, Shenzhen, 518060, P. R. China.
| |
Collapse
|
7
|
Han SS, Ko TJ, Shawkat MS, Shum AK, Bae TS, Chung HS, Ma J, Sattar S, Hafiz SB, Mahfuz MMA, Mofid SA, Larsson JA, Oh KH, Ko DK, Jung Y. Peel-and-Stick Integration of Atomically Thin Nonlayered PtS Semiconductors for Multidimensionally Stretchable Electronic Devices. ACS APPLIED MATERIALS & INTERFACES 2022; 14:20268-20279. [PMID: 35442029 DOI: 10.1021/acsami.2c02766] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Various near-atom-thickness two-dimensional (2D) van der Waals (vdW) crystals with unparalleled electromechanical properties have been explored for transformative devices. Currently, the availability of 2D vdW crystals is rather limited in nature as they are only obtained from certain mother crystals with intrinsically possessed layered crystallinity and anisotropic molecular bonding. Recent efforts to transform conventionally non-vdW three-dimensional (3D) crystals into ultrathin 2D-like structures have seen rapid developments to explore device building blocks of unique form factors. Herein, we explore a "peel-and-stick" approach, where a nonlayered 3D platinum sulfide (PtS) crystal, traditionally known as a cooperate mineral material, is transformed into a freestanding 2D-like membrane for electromechanical applications. The ultrathin (∼10 nm) 3D PtS films grown on large-area (>cm2) silicon dioxide/silicon (SiO2/Si) wafers are precisely "peeled" inside water retaining desired geometries via a capillary-force-driven surface wettability control. Subsequently, they are "sticked" on strain-engineered patterned substrates presenting prominent semiconducting properties, i.e., p-type transport with an optical band gap of ∼1.24 eV. A variety of mechanically deformable strain-invariant electronic devices have been demonstrated by this peel-and-stick method, including biaxially stretchable photodetectors and respiratory sensing face masks. This study offers new opportunities of 2D-like nonlayered semiconducting crystals for emerging mechanically reconfigurable and stretchable device technologies.
Collapse
Affiliation(s)
- Sang Sub Han
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Tae-Jun Ko
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - Mashiyat Sumaiya Shawkat
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | | | - Tae-Sung Bae
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Hee-Suk Chung
- Analytical Research Division, Korea Basic Science Institute, Jeonju 54907, South Korea
| | - Jinwoo Ma
- Department of Chemical and Biomolecular Engineering, North Carolina State University, Raleigh, North Carolina 27606, United States
| | - Shahid Sattar
- Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE-97187, Sweden
- Department of Physics and Electrical Engineering, Linnaeus University, SE-39231 Kalmar, Sweden
| | - Shihab Bin Hafiz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Mohammad M Al Mahfuz
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Sohrab Alex Mofid
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| | - J Andreas Larsson
- Applied Physics, Division of Materials Science, Department of Engineering Sciences and Mathematics, Luleå University of Technology, Luleå SE-97187, Sweden
| | - Kyu Hwan Oh
- Department of Materials Science and Engineering, Seoul National University, Seoul 08826, South Korea
| | - Dong-Kyun Ko
- Department of Electrical and Computer Engineering, New Jersey Institute of Technology, Newark, New Jersey 07102, United States
| | - Yeonwoong Jung
- NanoScience Technology Center, University of Central Florida, Orlando, Florida 32826, United States
| |
Collapse
|