1
|
Lee K, Park K, Choi IH, Cho JW, Song MS, Kim CH, Lee JH, Lee JS, Park J, Chae SC. Deterministic Orientation Control of Ferroelectric HfO 2 Thin Film Growth by a Topotactic Phase Transition of an Oxide Electrode. ACS NANO 2024; 18:12707-12715. [PMID: 38733336 DOI: 10.1021/acsnano.3c07410] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2024]
Abstract
The scale-free ferroelectricity with superior Si compatibility of HfO2 has reawakened the feasibility of scaled-down nonvolatile devices and beyond the complementary metal-oxide-semiconductor (CMOS) architecture based on ferroelectric materials. However, despite the rapid development, fundamental understanding, and control of the metastable ferroelectric phase in terms of oxygen ion movement of HfO2 remain ambiguous. In this study, we have deterministically controlled the orientation of a single-crystalline ferroelectric phase HfO2 thin film via oxygen ion movement. We induced a topotactic phase transition of the metal electrode accompanied by the stabilization of the differently oriented ferroelectric phase HfO2 through the migration of oxygen ions between the oxygen-reactive metal electrode and the HfO2 layer. By stabilizing different polarization directions of HfO2 through oxygen ion migration, we can gain a profound understanding of the oxygen ion-relevant unclear phenomena of ferroelectric HfO2.
Collapse
Affiliation(s)
- Kyoungjun Lee
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Kunwoo Park
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
| | - In Hyeok Choi
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Jung Woo Cho
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Myeong Seop Song
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| | - Chang Hoon Kim
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jun Hee Lee
- Department of Energy Engineering, School of Energy and Chemical Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Korea
| | - Jong Seok Lee
- Department of Physics and Photon Science, Gwangju Institute of Science and Technology (GIST), Gwangju 61005, Korea
| | - Jungwon Park
- School of Chemical and Biological Engineering, Institute of Chemical Process, Seoul National University, Seoul 08826, Korea
- Center for Nanoparticle Research, Institute for Basic Science (IBS), Seoul 08826, Korea
| | - Seung Chul Chae
- Department of Physics Education, Seoul National University, Seoul 08826, Korea
| |
Collapse
|
2
|
Li X, Liu Z, Gao A, Zhang Q, Zhong H, Meng F, Lin T, Wang S, Su D, Jin K, Ge C, Gu L. Ferroelastically protected reversible orthorhombic to monoclinic-like phase transition in ZrO 2 nanocrystals. NATURE MATERIALS 2024:10.1038/s41563-024-01853-9. [PMID: 38589541 DOI: 10.1038/s41563-024-01853-9] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Accepted: 03/07/2024] [Indexed: 04/10/2024]
Abstract
Robust ferroelectricity in nanoscale fluorite oxide-based thin films enables promising applications in silicon-compatible non-volatile memories and logic devices. However, the polar orthorhombic (O) phase of fluorite oxides is a metastable phase that is prone to transforming into the ground-state non-polar monoclinic (M) phase, leading to macroscopic ferroelectric degradation. Here we investigate the reversibility of the O-M phase transition in ZrO2 nanocrystals via in situ visualization of the martensitic transformation at the atomic scale. We reveal that the reversible shear deformation pathway from the O phase to the monoclinic-like (M') state, a compressive-strained M phase, is protected by 90° ferroelectric-ferroelastic switching. Nevertheless, as the M' state gradually accumulates localized strain, a critical tensile strain can pin the ferroelastic domain, resulting in an irreversible M'-M strain relaxation and the loss of ferroelectricity. These findings demonstrate the key role of ferroelastic switching in the reversibility of phase transition and also provide a tensile-strain threshold for stabilizing the metastable ferroelectric phase in fluorite oxide thin films.
Collapse
Affiliation(s)
- Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China
| | - Ang Gao
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Fanqi Meng
- School of Materials Science and Engineering, Peking University, Beijing, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Shiyu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
| | - Dong Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China
- Songshan Lake Materials Laboratory, Dongguan, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing, China.
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, China.
| |
Collapse
|
3
|
Zhou C, Ma L, Feng Y, Kuo CY, Ku YC, Liu CE, Cheng X, Li J, Si Y, Huang H, Huang Y, Zhao H, Chang CF, Das S, Liu S, Chen Z. Enhanced polarization switching characteristics of HfO 2 ultrathin films via acceptor-donor co-doping. Nat Commun 2024; 15:2893. [PMID: 38570498 PMCID: PMC10991407 DOI: 10.1038/s41467-024-47194-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/14/2023] [Accepted: 03/22/2024] [Indexed: 04/05/2024] Open
Abstract
In the realm of ferroelectric memories, HfO2-based ferroelectrics stand out because of their exceptional CMOS compatibility and scalability. Nevertheless, their switchable polarization and switching speed are not on par with those of perovskite ferroelectrics. It is widely acknowledged that defects play a crucial role in stabilizing the metastable polar phase of HfO2. Simultaneously, defects also pin the domain walls and impede the switching process, ultimately rendering the sluggish switching of HfO2. Herein, we present an effective strategy involving acceptor-donor co-doping to effectively tackle this dilemma. Remarkably enhanced ferroelectricity and the fastest switching process ever reported among HfO2 polar devices are observed in La3+-Ta5+ co-doped HfO2 ultrathin films. Moreover, robust macro-electrical characteristics of co-doped films persist even at a thickness as low as 3 nm, expanding potential applications of HfO2 in ultrathin devices. Our systematic investigations further demonstrate that synergistic effects of uniform microstructure and smaller switching barrier introduced by co-doping ensure the enhanced ferroelectricity and shortened switching time. The co-doping strategy offers an effective avenue to control the defect state and improve the ferroelectric properties of HfO2 films.
Collapse
Affiliation(s)
- Chao Zhou
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Liyang Ma
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China
| | - Yanpeng Feng
- Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Wenhua Road 72, Shenyang, 110016, China
| | - Chang-Yang Kuo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- National Synchrotron Radiation Research Center, Hsinchu, Taiwan
| | - Yu-Chieh Ku
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Cheng-En Liu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Xianlong Cheng
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Jingxuan Li
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Yangyang Si
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Haoliang Huang
- Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
| | - Yan Huang
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China
| | - Hongjian Zhao
- Key Laboratory of Material Simulation Methods and Software of Ministry of Education, College of Physics, Jilin University, Changchun, 130012, China
| | - Chun-Fu Chang
- Max-Planck Institute for Chemical Physics of Solids, Nöthnitzer Str. 40, 01187, Dresden, Germany
| | - Sujit Das
- Materials Research Centre, Indian Institute of Science, Bangalore, 560012, India
| | - Shi Liu
- Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, School of Science, Westlake University, Hangzhou, Zhejiang, 310024, China.
| | - Zuhuang Chen
- School of Materials Science and Engineering, Harbin Institute of Technology, Shenzhen, 518055, China.
- Flexible Printed Electronics Technology Center, Harbin Institute of Technology, Shenzhen, 518055, China.
| |
Collapse
|
4
|
Lu C, Li M, Gao L, Zhang Q, Zhu M, Lyu X, Wang Y, Liu J, Liu P, Wang L, Tao H, Song J, Ji A, Li P, Gu L, Cao Z, Lu N. Freestanding Crystalline β-Ga 2O 3 Flexible Membrane Obtained via Lattice Epitaxy Engineering for High-Performance Optoelectronic Device. ACS NANO 2024. [PMID: 38335925 DOI: 10.1021/acsnano.3c10025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/12/2024]
Abstract
Wearable and flexible β-Ga2O3-based semiconductor devices have attracted considerable attention, due to their outstanding performance and potential application in real-time optoelectronic monitoring and sensing. However, the unavailability of high-quality crystalline and flexible β-Ga2O3 membranes limits the fabrication of relevant devices. Here, through lattice epitaxy engineering together with the freestanding method, we demonstrate the preparation of a robust bending-resistant and crystalline β-Ga2O3 (-201) membrane. Based on this, we fabricate a flexible β-Ga2O3 photodetector device that shows comparable performance in photocurrent responsivity and spectral selectivity to conventional rigid β-Ga2O3 film-based devices. Moreover, based on the transferred β-Ga2O3 membrane on a silicon wafer, the PEDOT:PSS/β-Ga2O3 p-n heterojunction device with self-powered characteristic was constructed, further demonstrating its superior heterogeneous integration ability with other functional materials. Our results not only demonstrate the feasibility of obtaining a high-quality crystalline and flexible β-Ga2O3 membrane for an integrated device but also provide a pathway to realize flexible optical and electronic applications for other semiconducting materials.
Collapse
Affiliation(s)
- Chao Lu
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mengcheng Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lei Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Mingtong Zhu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Xiangyu Lyu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Yuqian Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Jin Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Pengyu Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Lu Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
| | - Huayu Tao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- College of Materials Science and Optoelectronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China
| | - Jiayi Song
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Ailing Ji
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100190, China
| | - Peigang Li
- School of Integrated Circuits and State Key Laboratory of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications, Beijing 100876, China
| | - Lin Gu
- School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Zexian Cao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| | - Nianpeng Lu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China
| |
Collapse
|
5
|
Liu Z, Zhang Q, Xie D, Zhang M, Li X, Zhong H, Li G, He M, Shang D, Wang C, Gu L, Yang G, Jin K, Ge C. Interface-type tunable oxygen ion dynamics for physical reservoir computing. Nat Commun 2023; 14:7176. [PMID: 37935751 PMCID: PMC10630289 DOI: 10.1038/s41467-023-42993-x] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/18/2023] [Accepted: 10/26/2023] [Indexed: 11/09/2023] Open
Abstract
Reservoir computing can more efficiently be used to solve time-dependent tasks than conventional feedforward network owing to various advantages, such as easy training and low hardware overhead. Physical reservoirs that contain intrinsic nonlinear dynamic processes could serve as next-generation dynamic computing systems. High-efficiency reservoir systems require nonlinear and dynamic responses to distinguish time-series input data. Herein, an interface-type dynamic transistor gated by an Hf0.5Zr0.5O2 (HZO) film was introduced to perform reservoir computing. The channel conductance of Mott material La0.67Sr0.33MnO3 (LSMO) can effectively be modulated by taking advantage of the unique coupled property of the polarization process and oxygen migration in hafnium-based ferroelectrics. The large positive value of the oxygen vacancy formation energy and negative value of the oxygen affinity energy resulted in the spontaneous migration of accumulated oxygen ions in the HZO films to the channel, leading to the dynamic relaxation process. The modulation of the channel conductance was found to be closely related to the current state, identified as the origin of the nonlinear response. In the time series recognition and prediction tasks, the proposed reservoir system showed an extremely low decision-making error. This work provides a promising pathway for exploiting dynamic ion systems for high-performance neural network devices.
Collapse
Affiliation(s)
- Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- Yangtze River Delta Physics Research Center Co. Ltd., 213300, Liyang, China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Mingzhen Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, 100049, Beijing, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physics and Optoelectronics Engineering, Ludong University, 264025, Yantai, Shandong, China
| | - Ge Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Dashan Shang
- Key Laboratory of Microelectronic Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029, Beijing, China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, 100084, Beijing, China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, 100190, Beijing, China.
- School of Physical Sciences, University of Chinese Academy of Science, 100049, Beijing, China.
| |
Collapse
|
6
|
Chen CH, Lai YT, Chen CF, Wu PT, Su KJ, Hsu SY, Dai GJ, Huang ZY, Hsu CL, Lee SY, Shen CH, Chen HY, Lee CC, Hsieh DR, Lin YF, Chao TS, Lo ST. Single-Gate In-Transistor Readout of Current Superposition and Collapse Utilizing Quantum Tunneling and Ferroelectric Switching. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2301206. [PMID: 37282350 DOI: 10.1002/adma.202301206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/07/2023] [Revised: 06/01/2023] [Indexed: 06/08/2023]
Abstract
In nanostructure assemblies, the superposition of current paths forms microscopic electric circuits, and different circuit networks produce varying results, particularly when utilized as transistor channels for computing applications. However, the intricate nature of assembly networks and the winding paths of commensurate currents hinder standard circuit modeling. Inspired by the quantum collapse of superposition states for information decoding in quantum circuits, the implementation of analogous current path collapse to facilitate the detection of microscopic circuits by modifying their network topology is explored. Here, the superposition and collapse of current paths in gate-all-around polysilicon nanosheet arrays are demonstrated to enrich the computational resources within transistors by engineering the channel length and quantity. Switching the ferroelectric polarization of Hf0.5 Zr0.5 O2 gate dielectric, which drives these transistors out-of-equilibrium, decodes the output polymorphism through circuit topological modifications. Furthermore, a protocol for the single-electron readout of ferroelectric polarization is presented with tailoring the channel coherence. The introduction of lateral path superposition results into intriguing metal-to-insulator transitions due to transient behavior of ferroelectric switching. This ability to adjust the current networks within transistors and their interaction with ferroelectric polarization in polycrystalline nanostructures lays the groundwork for generating diverse current characteristics as potential physical databases for optimization-based computing.
Collapse
Affiliation(s)
- Ching-Hung Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yu-Ting Lai
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Ciao-Fen Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Pei-Tzu Wu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Kuan-Jung Su
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Sheng-Yang Hsu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Guo-Jin Dai
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Zan-Yi Huang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chien-Lung Hsu
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Shen-Yang Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chuan-Hui Shen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Hsin-Yu Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Chia-Chin Lee
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Dong-Ru Hsieh
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung, 40227, Taiwan
| | - Tien-Sheng Chao
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| | - Shun-Tsung Lo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
- Center for Emergent Functional Matter Science, National Yang Ming Chiao Tung University, Hsinchu, 30010, Taiwan
| |
Collapse
|
7
|
Li X, Zhong H, Lin T, Meng F, Gao A, Liu Z, Su D, Jin K, Ge C, Zhang Q, Gu L. Polarization Switching and Correlated Phase Transitions in Fluorite-Structure ZrO 2 Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023:e2207736. [PMID: 37044111 DOI: 10.1002/adma.202207736] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2022] [Revised: 04/09/2023] [Indexed: 06/04/2023]
Abstract
Unconventional ferroelectricity in fluorite-structure oxides enables tremendous opportunities in nanoelectronics owing to their superior scalability and silicon compatibility. However, their polarization order and switching process remain elusive due to the challenges of visualizing oxygen ions in nanocrystalline films. In this work, the oxygen shifting during polarization switching and correlated polar-nonpolar phase transitions are directly captured among multiple metastable phases in freestanding ZrO2 thin films by low-dose integrated differential phase-contrast scanning transmission electron microscopy (iDPC-STEM). Bidirectional transitions between antiferroelectric and ferroelectric orders and interfacial polarization relaxation are clarified at unit-cell scale. Meanwhile, polarization switching is strongly correlated with Zr-O displacement in reversible martensitic transformation between monoclinic and orthorhombic phases and two-step tetrahedral-to-orthorhombic phase transition. These findings provide atomic insights into the transition pathways between metastable polymorphs and unravel the evolution of polarization orders in (anti)ferroelectric fluorite oxides.
Collapse
Affiliation(s)
- Xinyan Li
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Ting Lin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Fanqi Meng
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| | - Ang Gao
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Dong Su
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
- Songshan Lake Materials Laboratory, Dongguan, Guangdong, 523808, China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- School of Physical Sciences, University of Chinese Academy of Science, Beijing, 100049, China
| | - Qinghua Zhang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China
- Yangtze River Delta Physics Research Center Co. Ltd., Liyang, 213300, China
| | - Lin Gu
- Beijing National Center for Electron Microscopy and Laboratory of Advanced Materials, Department of Materials Science and Engineering, Tsinghua University, Beijing, 100084, China
| |
Collapse
|
8
|
Liu Z, Zhong H, Xie D, He M, Wang C, Lyu H, Yang G, Jin K, Ge C. Reversible fatigue-rejuvenation procedure and its mechanism in Hf 0.5Zr 0.5O 2epitaxial films. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:204002. [PMID: 36881920 DOI: 10.1088/1361-648x/acc229] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/05/2022] [Accepted: 03/07/2023] [Indexed: 06/18/2023]
Abstract
HfO2-based ferroelectrics, such as Hf0.5Zr0.5O2, arouse great attention in recent years because of their CMOS compatibility and robust nano-scale ferroelectricity. However, fatigue is one of the toughest problems for ferroelectric applications. The fatigue mechanism of HfO2-based ferroelectrics is different from conventional ferroelectric materials, and research on the fatigue mechanism in HfO2-based epitaxial films have been rarely reported. In this work, we fabricate 10 nm Hf0.5Zr0.5O2epitaxial films and investigate the fatigue mechanism. The experimental data show that the remanent ferroelectric polarization value decreased by 50% after 108cycles. It is worth noting that the fatigued Hf0.5Zr0.5O2epitaxial films can be recovered through applying electric stimulus. Combined with the temperature-dependent endurance analysis, we propose that fatigue of our Hf0.5Zr0.5O2films comes from both phase transition between ferroelectric Pca21and antiferroelectric Pbca as well as defects generation and dipole pinned. This result offers a fundamental understanding of HfO2-based film system, and could provide an important guideline for subsequent studies and future applications.
Collapse
Affiliation(s)
- Zhuohui Liu
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hai Zhong
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- School of Physics and Optoelectronics Engineering, Ludong University, Yantai 264025, Shandong, People's Republic of China
| | - Donggang Xie
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Meng He
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Can Wang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Hangbing Lyu
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
- Key Laboratory of Microelectronics Devices and Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, 100029 Beijing, People's Republic of China
| | - Guozhen Yang
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
| | - Kuijuan Jin
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| | - Chen Ge
- Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, People's Republic of China
- University of Chinese Academy of Sciences, Beijing 100049, People's Republic of China
| |
Collapse
|