1
|
Taneja V, Goyal N, Das S, Chandra S, Dutta P, Ravishankar N, Biswas K. Nanostructured Ferecrystal Intergrowths with TaSe 2 Unveiled High Thermoelectric Performance in n-Type SnSe. J Am Chem Soc 2024. [PMID: 39167763 DOI: 10.1021/jacs.4c09943] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Ferecrystals, a distinctive class of misfit layered compounds, hold significant promise in manipulating the phonon transport owing to their two-dimensional (2D) natural superlattice-type structure and turbostratic (rotational) disorder present between the constituent layers. Integrating these 2D intergrowth structures as nanodomains embedded in a bulk thermoelectric matrix is a formidable challenge in synthetic chemistry, yet offers groundbreaking opportunities for efficient thermoelectrics. Here, we have achieved an exceptionally high thermoelectric figure of merit, zT ∼ 2.2, at 823 K in n-type Ta and Br-codoped SnSe, by successfully incorporating [(SnSe)1.15]7(TaSe2)1 ferecrystals with [110] SnSe//[100] TaSe2 orientation, as nanostructures with modulations in few nm in bulk SnSe solid-state matrix. While the presence of ferecrystal nanostructures induces strong scattering of heat-carrying phonons resulting in an ultralow lattice thermal conductivity (κL) of ∼0.18 W m-1 K-1 at 773 K, the Ta and Br codoping strategy increases the concentration of n-type charge carriers for enhanced electrical conductivity. Our approach provides a new pathway for damping the phonon transport and enhancing the thermoelectric performance in 2D layered materials.
Collapse
Affiliation(s)
- Vaishali Taneja
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Naveen Goyal
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Subarna Das
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Sushmita Chandra
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Prabir Dutta
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - N Ravishankar
- Materials Research Centre, Indian Institute of Science, Bangalore 560012, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| |
Collapse
|
2
|
Abbey S, Jang H, Frimpong B, Nguyen VQ, Park JH, Park SD, Cho S, Jung YS, Hong KH, Oh MW. Chiral Twist Interface Modulation Enhances Thermoelectric Properties of Tellurium Crystal. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024:e2402147. [PMID: 39041948 DOI: 10.1002/advs.202402147] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 06/04/2024] [Indexed: 07/24/2024]
Abstract
Manipulating the grain boundary and chiral structure of enantiomorphic inorganic thermoelectric materials facilitates a new degree of freedom for enhancing thermoelectric energy conversion. Chiral twist mechanisms evolve by the screw dislocation phenomenon in the nanostructures; however, contributions of such chiral transport have been neglected for bulk crystals. Tellurium (Te) has a chiral trigonal crystal structure, high band degeneracy, and lattice anharmonicity for high thermoelectric performance. Here, Sb-doped Te crystals are grown to minimize the severe grain boundary effects on carrier transport and investigate the interface of chiral Te matrix and embedded achiral Sb2Te3 precipitates, which induce unusual lattice twists. The low grain boundary scattering and conformational grain restructuring provide electrical-favorable semicoherent interfaces. This maintains high electrical conductivity leading to a twofold increase in power factor compared to polycrystal samples. The embedded Sb2Te3 precipitates concurrently enable moderate phonon scattering leading to a remarkable decrease in lattice thermal conductivity and a high dimensionless figure of merit (zT) of 1.1 at 623 K. The crystal growth and chiral atomic reorientation unravel the emerging benefits of interface engineering as a crucial contributor to effectively enhancing carrier transport and minimizing phonon propagation in thermoelectric materials.
Collapse
Affiliation(s)
- Stanley Abbey
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of South Korea
| | - Hanhwi Jang
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of South Korea
| | - Brakowaa Frimpong
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of South Korea
| | - Van Quang Nguyen
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan, 44610, Republic of South Korea
| | - Jong Ho Park
- Thermoelectric Conversion Center, Creative and Fundamental Research Division, Korea Electro Technology Research Institute (KERI), Changwon, 51543, Republic of South Korea
| | - Su-Dong Park
- Thermoelectric Conversion Center, Creative and Fundamental Research Division, Korea Electro Technology Research Institute (KERI), Changwon, 51543, Republic of South Korea
| | - Sunglae Cho
- Department of Physics and Energy Harvest-Storage Research Center, University of Ulsan, Ulsan, 44610, Republic of South Korea
| | - Yeon Sik Jung
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon, 34141, Republic of South Korea
| | - Ki-Ha Hong
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of South Korea
| | - Min-Wook Oh
- Department of Materials Science and Engineering, Hanbat National University, Yuseong-gu, Daejeon, 34158, Republic of South Korea
| |
Collapse
|
3
|
Dou W, Gong Y, Huang X, Li Y, Zhang Q, Liu Y, Xia Q, Jian Q, Xiang D, Li D, Zhang D, Zhang S, Ying P, Tang G. CdSe Quantum Dots Enable High Thermoelectric Performance in Solution-Processed Polycrystalline SnSe. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2311153. [PMID: 38308409 DOI: 10.1002/smll.202311153] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/01/2023] [Revised: 01/15/2024] [Indexed: 02/04/2024]
Abstract
Here, a high peak ZT of ≈2.0 is reported in solution-processed polycrystalline Ge and Cd codoped SnSe. Microstructural characterization reveals that CdSe quantum dots are successfully introduced by solution process method. Ultraviolet photoelectron spectroscopy evinces that CdSe quantum dots enhance the density of states in the electronic structure of SnSe, which leads to a large Seebeck coefficient. It is found that Ge and Cd codoping simultaneously optimizes carrier concentration and improves electrical conductivity. The enhanced Seebeck coefficient and optimization of carrier concentration lead to marked increase in power factor. CdSe quantum dots combined with strong lattice strain give rise to strong phonon scattering, leading to an ultralow lattice thermal conductivity. Consequently, high thermoelectric performance is realized in solution-processed polycrystalline SnSe by designing quantum dot structures and introducing lattice strain. This work provides a new route for designing prospective thermoelectric materials by microstructural manipulation in solution chemistry.
Collapse
Affiliation(s)
- Wei Dou
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yaru Gong
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Xinqi Huang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yanan Li
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Qingtang Zhang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yuqi Liu
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - QinXuan Xia
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Qingyang Jian
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Deshang Xiang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Di Li
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, 230031, China
| | - Dewei Zhang
- School of Materials Science and Engineering, Yancheng Institute of Technology, Jiangsu, 221051, China
| | - Shihua Zhang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Pan Ying
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guodong Tang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, 210094, China
| |
Collapse
|
4
|
Dong J, Liu Y, Li Z, Xie H, Jiang Y, Wang H, Tan XY, Suwardi A, Zhou X, Li JF, Wolverton C, Dravid VP, Yan Q, Kanatzidis MG. High Thermoelectric Performance in Rhombohedral GeSe-LiBiTe 2. J Am Chem Soc 2024; 146:17355-17364. [PMID: 38870542 DOI: 10.1021/jacs.4c04453] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/15/2024]
Abstract
GeSe, an analogue of SnSe, shows promise in exhibiting exceptional thermoelectric performance in the Pnma phase. The constraints on its dopability, however, pose challenges in attaining optimal carrier concentrations and improving ZT values. This study demonstrates a crystal structure evolution strategy for achieving highly doped samples and promising ZTs in GeSe via LiBiTe2 alloying. A rhombohedral phase (R3m) can be stabilized in the GeSe-LiBiTe2 system, further evolving into a cubic (Fm3̅m) phase with a rising temperature. The band structures of GeSe-LiBiTe2 in the rhombohedral and cubic phases feature a similar multiple-valley energy-converged valence band of L and Σ bands. The observed high carrier concentration (∼1020 cm-3) reflects the effective convergence of these bands, enabling a high density-of-states effective mass and an enhanced power factor. Moreover, a very low lattice thermal conductivity of 0.6-0.5 W m-1 K-1 from 300 to 723 K is achieved in 0.9GeSe-0.1LiBiTe2, approaching the amorphous limit value. This remarkably low lattice thermal conductivity is related to phonon scattering from point defects, planar vacancies, and ferroelectric instability-induced low-energy Einstein oscillators. Finally, a maximum ZT value of 1.1 to 1.3 at 723 K is obtained, with a high average ZT value of over 0.8 (400-723 K) in 0.9GeSe-0.1LiBiTe2 samples. This study establishes a viable route for tailoring crystal structures to significantly improve the performance of GeSe-related compounds.
Collapse
Affiliation(s)
- Jinfeng Dong
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
| | - Yukun Liu
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Zhi Li
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Hongyao Xie
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
- School of Materials Science and Engineering, Beihang University, Beijing, 100191, China
| | - Yilin Jiang
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Honghui Wang
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing 401331, China
| | - Xian Yi Tan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Ady Suwardi
- Department of Electronic Engineering, The Chinese University of Hong Kong, New Territories, Hong Kong SAR, China
| | - Xiaoyuan Zhou
- College of Physics and Center of Quantum Materials & Devices, Chongqing University, Chongqing 401331, China
| | - Jing-Feng Li
- State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, China
| | - Christopher Wolverton
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Vinayak P Dravid
- Department of Materials Science and Engineering, Northwestern University, Evanston, Illinois 60208, United States
| | - Qingyu Yan
- School of Materials Science and Engineering, Nanyang Technological University, Singapore 639798, Singapore
- Institute of Materials Research and Engineering, A*STAR, Singapore 138634, Singapore
| | - Mercouri G Kanatzidis
- Department of Chemistry, Northwestern University, Evanston, Illinois 60208, United States
| |
Collapse
|
5
|
Sarkar D, Bhui A, Maria I, Dutta M, Biswas K. Hidden structures: a driving factor to achieve low thermal conductivity and high thermoelectric performance. Chem Soc Rev 2024; 53:6100-6149. [PMID: 38717749 DOI: 10.1039/d4cs00038b] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/18/2024]
Abstract
The long-range periodic atomic arrangement or the lack thereof in solids typically dictates the magnitude and temperature dependence of their lattice thermal conductivity (κlat). Compared to crystalline materials, glasses exhibit a much-suppressed κlat across all temperatures as the phonon mean free path reaches parity with the interatomic distances therein. While the occurrence of such glass-like thermal transport in crystalline solids captivates the scientific community with its fundamental inquiry, it also holds the potential for profoundly impacting the field of thermoelectric energy conversion. Therefore, efficient manipulation of thermal transport and comprehension of the microscopic mechanisms dictating phonon scattering in crystalline solids are paramount. As quantized lattice vibrations (i.e., phonons) drive κlat, atomistic insights into the chemical bonding characteristics are crucial to have informed knowledge about their origins. Recently, it has been observed that within the highly symmetric 'averaged' crystal structures, often there are hidden locally asymmetric atomic motifs (within a few Å), which exert far-reaching influence on phonon transport. Phenomena such as local atomic off-centering, atomic rattling or tunneling, liquid-like atomic motion, site splitting, local ordering, etc., which arise within a few Å scales, are generally found to drastically disrupt the passage of heat carrying phonons. Despite their profound implication(s) for phonon dynamics, they are often overlooked by traditional crystallographic techniques. In this review, we provide a brief overview of the fundamental aspects of heat transport and explore the status quo of innately low thermally conductive crystalline solids, wherein the phonon dynamics is majorly governed by local structural phenomena. We also discuss advanced techniques capable of characterizing the crystal structure at the sub-atomic level. Subsequently, we delve into the emergent new ideas with examples linked to local crystal structure and lattice dynamics. While discussing the implications of the local structure for thermal conductivity, we provide the state-of-the-art examples of high-performance thermoelectric materials. Finally, we offer our viewpoint on the experimental and theoretical challenges, potential new paths, and the integration of novel strategies with material synthesis to achieve low κlat and realize high thermoelectric performance in crystalline solids via local structure designing.
Collapse
Affiliation(s)
- Debattam Sarkar
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Animesh Bhui
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Ivy Maria
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Moinak Dutta
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| | - Kanishka Biswas
- New Chemistry Unit, School of Advanced Materials and International Centre for Materials Science, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India.
| |
Collapse
|
6
|
Gong Y, Dou W, Lu B, Zhang X, Zhu H, Ying P, Zhang Q, Liu Y, Li Y, Huang X, Iqbal MF, Zhang S, Li D, Zhang Y, Wu H, Tang G. Divacancy and resonance level enables high thermoelectric performance in n-type SnSe polycrystals. Nat Commun 2024; 15:4231. [PMID: 38762611 PMCID: PMC11102544 DOI: 10.1038/s41467-024-48635-0] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 01/13/2024] [Accepted: 05/09/2024] [Indexed: 05/20/2024] Open
Abstract
N-type polycrystalline SnSe is considered as a highly promising candidates for thermoelectric applications due to facile processing, machinability, and scalability. However, existing efforts do not enable a peak ZT value exceeding 2.0 in n-type polycrystalline SnSe. Here, we realized a significant ZT enhancement by leveraging the synergistic effects of divacancy defect and introducing resonance level into the conduction band. The resonance level and increased density of states resulting from tungsten boost the Seebeck coefficient. The combination of the enhanced electrical conductivity (achieved by increasing carrier concentration through WCl6 doping and Se vacancies) and large Seebeck coefficient lead to a high power factor. Microstructural analyses reveal that the co-existence of divacancy defects (Se vacancies and Sn vacancies) and endotaxial W- and Cl-rich nanoprecipitates scatter phonons effectively, resulting in ultralow lattice conductivity. Ultimately, a record-high peak ZT of 2.2 at 773 K is achieved in n-type SnSe0.92 + 0.03WCl6.
Collapse
Affiliation(s)
- Yaru Gong
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Wei Dou
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Bochen Lu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China
| | - Xuemei Zhang
- School of Physics and Electronic Information Engineering, Engineering Research Center of Nanostructure and Functional Materials, Ningxia Normal University, Guyuan, Ningxia, China
| | - He Zhu
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Pan Ying
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Qingtang Zhang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Yuqi Liu
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Yanan Li
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Xinqi Huang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Muhammad Faisal Iqbal
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Shihua Zhang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China
| | - Di Li
- Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei, China
| | - Yongsheng Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, Shandong Province, China.
| | - Haijun Wu
- State Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an, China.
| | - Guodong Tang
- National Key Laboratory of Advanced Casting Technologies, MIIT Key Laboratory of Advanced Metallic and Intermetallic Materials Technology, Engineering Research Center of Materials Behavior and Design, Ministry of Education, Nanjing University of Science and Technology, Nanjing, China.
| |
Collapse
|
7
|
Chen T, Li S, Chen K, Danish MH, Liu H, Li D, Xin H, Zhang Y, Zhang J, Qin X. Enhancing Thermoelectric Performance of n-Type Bi 2Te 2.7Se 0.3 through Incorporation of Amorphous Si 3N 4 Nanoparticles. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22016-22024. [PMID: 38647228 DOI: 10.1021/acsami.4c02652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi2Te2.7Se0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle- and low-frequency phonons at the incorporated a-Si3N4 nanoparticles. As a result, a large ZTmax = 1.19 (at 373 K) and an average ZTave ∼ 1.12 (300-473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si3N4 sample. Present results demonstrate that the incorporation of a-Si3N4 is a promising way to improve TE performance.
Collapse
Affiliation(s)
- Tao Chen
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Shujin Li
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Ke Chen
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Mazhar Hussain Danish
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Hui Liu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
| | - Di Li
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Hongxing Xin
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Yongsheng Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, Shandong 273165, China
| | - Jian Zhang
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xiaoying Qin
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| |
Collapse
|
8
|
Li H, Feng J, Zhao L, Min E, Zhang H, Li A, Li J, Liu R. Hierarchical Low-Temperature n-Type Bi 2Te 3 with High Thermoelectric Performances. ACS APPLIED MATERIALS & INTERFACES 2024; 16:22147-22154. [PMID: 38639142 DOI: 10.1021/acsami.4c02141] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/20/2024]
Abstract
The high performance of a multistage thermoelectric cooler (multi-TEC) used in a wide low-temperature range depends on the optimized thermoelectric (TE) performance of materials during the corresponding working temperature range for each stage. Despite decades of research on the commercial TE materials of Bi2Te3, the main research is still focused on temperatures above 300 K, lacking suitable hierarchical low-temperature n-Bi2Te3 for multistage TEC. In this work, we systematically investigated the influence of doping concentration and matrix material compositions on the TE performance of n-Bi2Te3 below room temperature by the high-energy ball milling and hot deformation. Consequently, two hierarchical n-Bi2Te3 materials with excellent mechanical properties working below 248 and around 298 K, respectively, have been screened out. The Bi2Te2.7Se0.3 + 0.03 wt % TeI4 can be adopted in a low-temperature range that exhibits the high average figure of merit (zTave) of 0.61 within 173-248 K. Meanwhile, the Bi2Te2.7Se0.3 + 0.05 wt % TeI4 sample displays a competitive zTave of 0.85 within 248-298 K, which can be applied above 248 K. The research of hierarchical TE materials provides valuable insights into the high-performance design of multistage TE cooling devices.
Collapse
Affiliation(s)
- Hao Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
- Nano Science and Technology Institute, University of Science and Technology of China, Suzhou215123, China
| | - Jianghe Feng
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Linghao Zhao
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Erbiao Min
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Hongcheng Zhang
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ali Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Juan Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| | - Ruiheng Liu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen 518055, China
| |
Collapse
|
9
|
Bhui A, Das S, Arora R, Bhat U, Dutta P, Ghosh T, Pathak R, Datta R, Waghmare UV, Biswas K. Hg Doping Induced Reduction in Structural Disorder Enhances the Thermoelectric Performance in AgSbTe 2. J Am Chem Soc 2023; 145:25392-25400. [PMID: 37942795 DOI: 10.1021/jacs.3c09643] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/10/2023]
Abstract
Defect engineering, achieved by precise tuning of the atomic disorder within crystalline solids, forms a cornerstone of structural chemistry. This nuanced approach holds the potential to significantly augment thermoelectric performance by synergistically manipulating the interplay between the charge carrier and lattice dynamics. Here, the current study presents a distinctive investigation wherein the introduction of Hg doping into AgSbTe2 serves to partially curtail structural disorder. This strategic maneuver mitigates potential fluctuations originating from pronounced charge and size disparities between Ag+ and Sb3+, positioned in octahedral sites within the rock salt structure. Hg doping significantly improves the phase stability of AgSbTe2 by restricting the congenital emergence of the Ag2Te minor secondary phase and promotes partial atomic ordering in the cation sublattice. Reduction in atomic disorder coalesced with a complementary modification of electronic structure by Hg doping results in increased carrier mobility. The formation of nanoscale superstructure with sizes (2-5 nm) of the order of phonon mean free path in AgSbTe2 is further promoted by reduced partial disorder, causes enhanced scattering of heat-carrying phonons, and results in a glass-like ultralow lattice thermal conductivity (∼0.32 W m-1 K-1 at 297 K). Cumulatively, the multifaceted influence of Hg doping, in conjunction with the consequential reduction in disorder, allows achieving a high thermoelectric figure-of-merit, zT, of ∼2.4 at ∼570 K. This result defies conventional paradigms that prioritize increased disorder for optimizing zT.
Collapse
Affiliation(s)
- Animesh Bhui
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Subarna Das
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Raagya Arora
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Usha Bhat
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Prabir Dutta
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Tanmoy Ghosh
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Riddhimoy Pathak
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Ranjan Datta
- Chemistry and Physics of Materials Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Umesh V Waghmare
- Theoretical Sciences Unit and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| | - Kanishka Biswas
- New Chemistry Unit, International Centre for Materials Science and School of Advanced Materials, Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore 560064, India
| |
Collapse
|
10
|
Dadhich A, Saminathan M, Muthiah S, Bhui A, Perumal S, Rao MSR, Sethupathi K. Enhancement in Thermoelectric Performance in Ti-doped Yb 0.4Co 4Sb 12 Skutterudites via Carrier Optimization and Phonon Anharmonicity. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37916737 DOI: 10.1021/acsami.3c09768] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 11/03/2023]
Abstract
Yb0.4Co4Sb12, being a well-studied system, has shown notably high thermoelectric performance due to the Yb filler atom-driven large concentration of charge carriers and lower value of thermal conductivity. In this work, the thermoelectric performance of YbzCo4-xTixSb12 (where z = 0, x = 0 and z = 0.4, x = 0, 0.04, and 0.08) upon Ti doping prepared by the melt-quenched-annealing followed by spark plasma sintering (SPS) has been studied in the temperature range of 300-700 K. Addition of Yb and doping of donor Ti at the Co site simultaneously increase the electrical conductivity to 1453.5 S/cm at 300 K, which ultimately boosts the power factor as high as ∼4.3 mW/(m·K2) at 675 K in Yb0.4Co3.96Ti0.04Sb12. Adversely, a significant reduction in thermal conductivity is obtained from ∼7.69 W/(m·K) (Co4Sb12) to ∼3.50 W/(m·K) (Yb0.4Co3.96Ti0.04Sb12) at ∼300 K. As a result, the maximum zT is achieved as ∼0.85 at 623 K with high hardness of 584 HV for the composition of Yb0.4Co3.96Ti0.04Sb12, which demonstrates it to be an efficient material suitable for intermediate temperature thermoelectric applications.
Collapse
Affiliation(s)
- Akshara Dadhich
- Low Temperature Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Department of Physics, Nano Functional Materials Technology Center and Materials Science Research Center, Indian Institute of Technology Madras, Chennai 600036, India
| | - Madhuvathani Saminathan
- Laboratory for Energy and Advanced Devices (LEAD), Department of Physics and Nanotechnology, SRM Institute of Science and Technology, Kattankulathur, Chengalpattu 603203, India
| | - Saravanan Muthiah
- Advanced Materials and Device Metrology Division, National Physical Laboratory, New Delhi 110012, India
| | - Animesh Bhui
- New Chemistry Unit, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore, Karnataka 560 064, India
| | - Suresh Perumal
- Laboratory for Energy and Advanced Devices (LEAD), Department of Materials Science and Metallurgical Engineering, Indian Institute of Technology, Hyderabad, Telangana 502 285, India
| | - M S Ramachandra Rao
- Department of Physics, Nano Functional Materials Technology Center and Materials Science Research Center, Indian Institute of Technology Madras, Chennai 600036, India
- Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Indian Institute of Technology Madras, Chennai 600036, India
| | - Kanikrishnan Sethupathi
- Low Temperature Physics Laboratory, Department of Physics, Indian Institute of Technology Madras, Chennai 600036, India
- Quantum Centre of Excellence for Diamond and Emergent Materials (QuCenDiEM), Indian Institute of Technology Madras, Chennai 600036, India
| |
Collapse
|
11
|
Yang E, Jiang Q, Li G, Tian Z, Li J, Kang H, Chen Z, Guo E, Wang J, Wang T. Enhancing Thermoelectric Performance of CuInTe 2 via Trace Ag Doping at Indium Sites. ACS APPLIED MATERIALS & INTERFACES 2023; 15:49370-49378. [PMID: 37824824 DOI: 10.1021/acsami.3c11825] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 10/14/2023]
Abstract
Thermoelectric technology can be utilized to directly convert waste heat into electricity, aiming at energy harvesting in an environmentally friendly manner. As a promising p-type thermoelectric material, CuInTe2 possesses a high inherent lattice thermal conductivity, which limits the practical implementation in the field of thermoelectricity. Herein, through the combination of vacuum melting and annealing along with hot-pressure sintering techniques, we demonstrated that CuIn0.95Ag0.05Te2 thermoelectric materials with trace Ag doping can exhibit a notably high Seebeck coefficient of 614 μV/K, arising from the high density-of-states effective mass and reduced carrier concentration. Owing to the diminished lattice thermal conductivity derived from Umklapp scattering induced by point defects and dislocation, stemming from the trace Ag doping at In sites rather than Cu sites, CuIn0.95Ag0.05Te2 exhibited a maximum figure of merit (ZT) of 1.38 at 823 K, an 18% enhancement over pristine CuInTe2, leading to a maximum average ZT of 0.67 across temperatures ranging from 303 to 823 K. In essence, our work underscores the efficacy of doping engineering and point defects in tailoring the thermoelectric performance of CuInTe2-based materials. This study not only contributes to advancing the fundamental understanding of thermoelectric enhancement but also lays out a practical pathway toward the realization of high-performance CuInTe2-based thermoelectric materials.
Collapse
Affiliation(s)
- Erkuo Yang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Quanwei Jiang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Guangshu Li
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Zhen Tian
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Jianbo Li
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
| | - Huijun Kang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Zongning Chen
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Enyu Guo
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| | - Jun Wang
- State Key Laboratory of Solidification Processing, Northwestern Polytechnical University, Xi'an 710072, China
| | - Tongmin Wang
- Key Laboratory of Solidification Control and Digital Preparation Technology (Liaoning Province), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China
- Ningbo Institute of Dalian University of Technology, Ningbo 315000, China
| |
Collapse
|
12
|
Zhou J, Feng J, Li H, Liu D, Qiu G, Qiu F, Li J, Luo ZZ, Zou Z, Sun R, Liu R. Modulation of Vacancy Defects and Texture for High Performance n-Type Bi 2 Te 3 via High Energy Refinement. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2023; 19:e2300654. [PMID: 36919261 DOI: 10.1002/smll.202300654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/23/2023] [Revised: 02/20/2023] [Indexed: 06/15/2023]
Abstract
The carrier concentration in n-type layered Bi2 Te3 -based thermoelectric (TE) material is significantly impacted by the donor-like effect, which would be further intensified by the nonbasal slip during grain refinement of crushing, milling, and deformation, inducing a big challenge to improve its TE performance and mechanical property simultaneously. In this work, high-energy refinement and hot-pressing are used to stabilize the carrier concentration due to the facilitated recovery of cation and anion vacancies. Based on this, combined with SbI3 doping and hot deformation, the optimized carrier concentration and high texture degree are simultaneously realized. As a result, a peak figure of merit (zT) of 1.14 at 323 K for Bi2 Te2.7 Se0.3 + 0.05 wt.% SbI3 sample with the high bending strength of 100 Mpa is obtained. Furthermore, a 31-couple thermoelectric cooling device consisted of n-type Bi2 Te2.7 Se0.3 + 0.05 wt.% SbI3 and commercial p-type Bi0.5 Sb1.5 Te3 legs is fabricated, which generates the large maximum temperature difference (ΔTmax ) of 85 K at a hot-side temperature of 343 K. Thus, the discovery of recovery effect in high energy refinement and hot-pressing has significant implications for improving TE performance and mechanical strength of n-type Bi2 Te3 , thereby promoting its applications in harsh conditions.
Collapse
Affiliation(s)
- Jing Zhou
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
| | - Jianghe Feng
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Hao Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Duo Liu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Guojuan Qiu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Feng Qiu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Juan Li
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Zhong-Zhen Luo
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China
| | - Zhigang Zou
- Key Laboratory of Eco-materials Advanced Technology, College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, P. R. China
- Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou, Fujian, 350108, China
| | - Rong Sun
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| | - Ruiheng Liu
- Shenzhen Institute of Advanced Electronic Materials, Shenzhen Institute of Advanced Technology, Chinese Academy of Sciences, Shenzhen, 518055, China
| |
Collapse
|
13
|
Burton MR, Howells G, Mehraban S, McGettrick JD, Lavery N, Carnie MJ. Fully 3D Printed Tin Selenide (SnSe) Thermoelectric Generators with Alternating n-Type and p-Type Legs. ACS APPLIED ENERGY MATERIALS 2023; 6:5498-5507. [PMID: 37234971 PMCID: PMC10206617 DOI: 10.1021/acsaem.3c00576] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/06/2023] [Accepted: 04/17/2023] [Indexed: 05/28/2023]
Abstract
Tin selenide (SnSe) has attracted much attention in the field of thermoelectrics since the discovery of the record figure of merit (zT) of 2.6 ± 0.3. While there have been many publications on p-type SnSe, to manufacture efficient SnSe thermoelectric generators, ann-type is also required. Publications on n-type SnSe, however, are limited. This paper reports a pseudo-3D-printing technique to fabricate bulk n-type SnSe elements, by utilizing Bi as a dopant. Various Bi doping levels are investigated and characterized over a wide range of temperatures and through multiple thermal cycles. Stable n-type SnSe elements are then combined with printed p-type SnSe elements to fabricate a fully printed alternating n- and p-type thermoelectric generator, which is shown to produce 145 μW at 774 K.
Collapse
Affiliation(s)
- Matthew Richard Burton
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
| | - Geraint Howells
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
| | - Shahin Mehraban
- MACH
1, Faculty of Science and Engineering, Swansea
University, Bay Campus, Swansea SA1 8EN, United
Kingdom
| | - James D. McGettrick
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
| | - Nicholas Lavery
- MACH
1, Faculty of Science and Engineering, Swansea
University, Bay Campus, Swansea SA1 8EN, United
Kingdom
| | - Matthew J. Carnie
- SPECIFIC-IKC,
Department of Materials Science and Engineering, Faculty of Science
and Engineering, Swansea University, Bay Campus, Swansea SA1
8EN, United Kingdom
| |
Collapse
|