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Chen T, Li S, Chen K, Danish MH, Liu H, Li D, Xin H, Zhang Y, Zhang J, Qin X. Enhancing Thermoelectric Performance of n-Type Bi 2Te 2.7Se 0.3 through Incorporation of Amorphous Si 3N 4 Nanoparticles. ACS Appl Mater Interfaces 2024; 16:22016-22024. [PMID: 38647228 DOI: 10.1021/acsami.4c02652] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 04/25/2024]
Abstract
Bi2Te3-based thermoelectric (TE) materials are the state-of-the-art compounds for commercial applications near room temperature. Nevertheless, the application of the n-type Bi2Te2.7Se0.3 (BTS) is restricted by the comparatively low figure of merit (ZT) and intrinsic embrittlement. Here, we show that through dispersion of amorphous Si3N4 (a-Si3N4) nanoparticles both 14% increase in power factor (at 300 K) and 48% decrease in lattice thermal conductivity are simultaneously realized. The increased power factor comes from enhanced thermopower and reduced electrical resistivity while the reduced lattice thermal conductivity originates mainly from scattering of middle- and low-frequency phonons at the incorporated a-Si3N4 nanoparticles. As a result, a large ZTmax = 1.19 (at 373 K) and an average ZTave ∼ 1.12 (300-473 K) with better mechanical properties are achieved for the BTS/0.25 wt % Si3N4 sample. Present results demonstrate that the incorporation of a-Si3N4 is a promising way to improve TE performance.
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Affiliation(s)
- Tao Chen
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Shujin Li
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Ke Chen
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Mazhar Hussain Danish
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Hui Liu
- College of Materials Science and Engineering, Nanjing Tech University, Nanjing 210009, China
| | - Di Li
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Hongxing Xin
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
| | - Yongsheng Zhang
- Advanced Research Institute of Multidisciplinary Sciences, Qufu Normal University, Qufu, Shandong 273165, China
| | - Jian Zhang
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
| | - Xiaoying Qin
- Key Lab of Photovoltaic and Energy Conservation Materials, Institute of Solid State Physics, HFIPS, Chinese Academy of Sciences, Hefei 230031, China
- University of Science and Technology of China, Hefei 230026, P. R. China
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Ma Z, Xu T, Li W, Cheng Y, Li J, Wei Y, Jiang Q, Luo Y, Yang J. High Thermoelectric Performance SnTe with a Segregated and Percolated Structure. ACS Appl Mater Interfaces 2022; 14:9192-9202. [PMID: 35133800 DOI: 10.1021/acsami.1c24075] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
A nanostructure has a significant role in enhancing the power factor and preventing the heat propagation for thermoelectric materials. Herein, we propose a unique segregated and percolated (SP) microphase-separated structure to enhance the thermoelectric performance of SnTe. The SP structure is composed of insoluble SnTe and AgCuTe, in which AgCuTe with ultralow lattice thermal conductivity undergoes a solid-phase welding during a spark plasma sintering process and forms continuous percolated layers at the interface of isolated SnTe. The SP structure achieved a simultaneous scattering for low energy holes due to the energy offset of the valence band maximum between SnTe and AgCuTe and for phonons due to the noncoherent interfaces between SnTe and AgCuTe, resulting in a high Seebeck coefficient of ∼219.4 μV/K and a low lattice thermal conductivity of ∼1.1 W m-1 K-1 at 800 K for (SnTe)0.55(AgCuTe)0.45. The thermoelectric performance was further enhanced by means of the cosubstitution of In and Mn for Sn in the SnTe lattice, inducing resonance levels and extra phonon scattering. As a result, the SP structure combined with In/Mn codoping enable us to achieve a low lattice thermal conductivity of 0.47 W m-1 K-1, a peak ZT of ∼1.45 at 800 K, and a high average ZT of ∼0.73 (400-800 K) for (Sn0.98In0.01Mn0.01Te)0.75(AgCuTe)0.25.
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Affiliation(s)
- Zheng Ma
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Tian Xu
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Wang Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yiming Cheng
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Jinmeng Li
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yingchao Wei
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Qinghui Jiang
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Yubo Luo
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
| | - Junyou Yang
- State Key Laboratory of Materials Processing and Die & Mould Technology, Huazhong University of Science and Technology, Wuhan 430074, P. R. China
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Park NW, Lee WY, Yoon YS, Kim GS, Yoon YG, Lee SK. Achieving Out-of-Plane Thermoelectric Figure of Merit ZT = 1.44 in a p-Type Bi 2Te 3/Bi 0.5Sb 1.5Te 3 Superlattice Film with Low Interfacial Resistance. ACS Appl Mater Interfaces 2019; 11:38247-38254. [PMID: 31542917 DOI: 10.1021/acsami.9b11042] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.4] [Reference Citation Analysis] [What about the content of this article? (0)] [Affiliation(s)] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Recently, low-dimensional superlattice films have attracted significant attention because of their low dimensionality and anisotropic thermoelectric (TE) properties such as the Seebeck coefficient, electrical conductivity, and thermal conductivity. For these superlattice structures, both electrons and phonons show highly anisotropic behavior and exhibit much stronger interface scattering in the out-of-plane direction of the films compared to the in-plane direction. However, no detailed information is available in the literature for the out-of-plane TE properties of the superlattice-based films. In this report, we present the out-of-plane Seebeck coefficient, thermal conductivity, and electrical properties of p-type Bi2Te3/Bi0.5Sb1.5Te3 (bismuth telluride/bismuth antimony telluride, BT/BST) superlattice films in the temperature range of 77-500 K. Because of the synergistic combination of the energy filtering effect and low interfacial resistance of the superlattice structure, an impressively high ZT of 1.44 was achieved at 400 K for the 200 nm-thick p-type BT/BST superlattice film, corresponding to a 43% ZT enhancement compared to the pristine p-BST films with the same thickness.
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Affiliation(s)
- No-Won Park
- Department of Physics , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Won-Yong Lee
- Department of Physics , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Yo-Seop Yoon
- Department of Physics , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Gil-Sung Kim
- Department of Physics , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Young-Gui Yoon
- Department of Physics , Chung-Ang University , Seoul 06974 , Republic of Korea
| | - Sang-Kwon Lee
- Department of Physics , Chung-Ang University , Seoul 06974 , Republic of Korea
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