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Huang J, Li Z, Zhu Y, Yang L, Lin X, Li Y, Wang Y, Wang Y, Fu Y, Xu W, Huang M, Li D, Pan A. Monolithic Integration of Full-Color Microdisplay Screen with Sub-5 µm Quantum-Dot Pixels. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2409025. [PMID: 39267409 DOI: 10.1002/adma.202409025] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/24/2024] [Revised: 08/22/2024] [Indexed: 09/17/2024]
Abstract
Monolithic integration of color-conversion materials onto blue-backlight micro-light-emitting-diodes (micro-LEDs) has emerged as a promising strategy for achieving full-color microdisplay devices. However, this approach still encounters challenges such as the blue-backlight leakage and the poor fabrication yield rate due to unsatisfied quantum dot (QD) material and fabrication process. Here, the monolithic integration of 0.39-inch micro-display screens displaying colorful pictures and videos are demonstrated, which are enabled by creating interfacial chemical bonds for wafer-scale adhesion of sub-5 µm QD-pixels on blue-backlight micro-LED wafer. The ligand molecule with chlorosulfonyl and silane groups is selected as the synthesis ligand and surface treatment material, facilitating the preparation of high-efficiency QD photoresist and the formation of robust chemical bonds for pixel integration. This is a leading record in micro-display devices achieving the highest brightness larger than 400 thousand nits, the ultrahigh resolution of 3300 PPI, the wide color gamut of 130.4% NTSC, and the ultimate performance of service life exceeding 1000 h. These results extend the mature integrated circuit technique into the manufacture of micro-display device, which also lead the road of industrialization process of full-color micro-LEDs.
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Affiliation(s)
- Jianhua Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Ziwei Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, 410081, P. R. China
| | - Youliang Zhu
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- Innovation Technology (Suzhou) Co., Ltd, Suzhou, 215011, P. R. China
| | - Liuli Yang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Xiao Lin
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- Innovation Technology (Suzhou) Co., Ltd, Suzhou, 215011, P. R. China
| | - Yi Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yizhe Wang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Yazhou Wang
- Innovation Technology (Suzhou) Co., Ltd, Suzhou, 215011, P. R. China
| | - Yi Fu
- LatticePower Co., Ltd, Nanchang, 330038, P. R. China
| | - Weidong Xu
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Ming Huang
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Dong Li
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
| | - Anlian Pan
- Hunan Institute of Optoelectronic Integration, College of Materials Science and Engineering, Hunan University, Changsha, 410082, P. R. China
- School of Physics and Electronics, Hunan Normal University, Changsha, 410081, P. R. China
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2
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Fu Z, Musolino SF, Qing W, Li H, de Zwart FJ, Zheng Z, Cai M, Gao Y, de Bruin B, Dai X, Wulff JE, Zhang H. Direct Photopatterning of Colloidal Quantum Dots with Electronically Optimized Diazirine Cross-Linkers. J Am Chem Soc 2024; 146:28895-28905. [PMID: 39381921 DOI: 10.1021/jacs.4c09209] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2024]
Abstract
Colloidal quantum dots (QDs) with a wide color gamut and high luminescent efficiency are promising for next-generation electronic and photonic devices. However, precise and scalable patterning of QDs without degrading their properties and their integration into commercially relevant devices, such as digitally addressable QD light-emitting diode (QLED) displays, remain challenging. Here, we develop electronically optimized diazirine-based cross-linkers for nondestructive, direct photopatterning of QDs and, ultimately, building the active-matrix QLED displays. The key to the cross-linker design is the introduction of electron-donating substituents that permit the formation of ground-state singlet carbenes for air-stable and benign QD photopatterning. Under ambient conditions, these cross-linkers enable the patterning of heavy metal-free QDs at a resolution of over 13,000 pixels per inch using commercial i-line photolithography. The patterned QD layers fully preserved their optical and optoelectronic properties. Pixelated electroluminescent devices with patterned InP/ZnSe/ZnS QD layers show a peak external quantum efficiency of 15.3% and a maximum luminance of about 40,000 cd m-2, outperforming those made by existing QD patterning approaches. We further show the seamless integration of patterned QLEDs with thin-film transistor circuits and the fabrication of dual-color active-matrix displays. These results underscore the importance of designing photochemistry for QD patterning, and promise the implementation of direct photopatterning methods in manufacturing commercial QLED displays and other integrated QD device platforms.
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Affiliation(s)
- Zhong Fu
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Stefania F Musolino
- Department of Chemistry, University of Victoria, Victoria, British Columbia V8W 2Y2, Canada
- XLYNX Materials, Inc., Victoria, British Columbia V8P 5C2, Canada
| | - Wenyue Qing
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Hongjin Li
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, Zhejiang 310058, China
| | - Felix J de Zwart
- Van 't Hoff Institute for Molecular Sciences (HIMS), University of Amsterdam, Amsterdam 1098 XH, The Netherlands
| | - Zhi Zheng
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Mingfeng Cai
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, China
| | - Yun Gao
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, Zhejiang 310058, China
| | - Bas de Bruin
- Van 't Hoff Institute for Molecular Sciences (HIMS), University of Amsterdam, Amsterdam 1098 XH, The Netherlands
| | - Xingliang Dai
- School of Materials Science and Engineering, State Key Laboratory of Silicon and Advanced Semiconductor Materials, Zhejiang University, Hangzhou, Zhejiang 310058, China
| | - Jeremy E Wulff
- Department of Chemistry, University of Victoria, Victoria, British Columbia V8W 2Y2, Canada
| | - Hao Zhang
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, China
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Ong WYE, Tan YZD, Lim LJ, Hoang TG, Tan ZK. Crosslinkable Ligands for High-Density Photo-Patterning of Perovskite Nanocrystals. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2409564. [PMID: 39374000 DOI: 10.1002/adma.202409564] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/04/2024] [Revised: 09/23/2024] [Indexed: 10/08/2024]
Abstract
Perovskite nanocrystals (PNCs) are promising luminescent materials for electronic color displays due to their high luminescence efficiency, widely-tunable emission wavelengths, and narrow emission linewidth. Their application in emerging display technologies necessitates precise micron-scale patterning while maintaining good optical performance. Although photolithography is a well-established micro-patterning technique in the industry, conventional processes are incompatible with PNCs as the use of polar solvents can damage the ionic PNCs, causing severe luminescence quenching. Here, we report the rational design and synthesis of a new bidentate photo-crosslinkable ligand for the direct photo-patterning of PNCs. Each ligand contains two photosensitive acrylate groups and two carboxylate groups, and is introduced to the PNCs via an entropy-driven ligand exchange process. In a close-packed thin film, the acrylate ligands photo-polymerize and crosslink under ultraviolet light, rendering the PNCs insoluble in developing solvents. A high-density crosslinked PNC film with an optical density of 1.1 is attained at 1.4 µm thickness, surpassing industry requirements on the absorption coefficient. Micron-scale patterning is further demonstrated using direct laser writing, producing well-defined 20 µm features. This study thus offers an effective and versatile approach for micro-patterning PNCs, and may also be broadly applicable to other nanomaterial systems.
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Affiliation(s)
- Woan Yuann Evon Ong
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Yong Zheng Daniel Tan
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Li Jun Lim
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Truong Giang Hoang
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
| | - Zhi-Kuang Tan
- Department of Chemistry, National University of Singapore, 3 Science Drive 3, Singapore, 117543, Singapore
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4
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Fan J, Han C, Yang G, Song B, Xu R, Xiang C, Zhang T, Qian L. Recent Progress of Quantum Dots Light-Emitting Diodes: Materials, Device Structures, and Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2312948. [PMID: 38813832 DOI: 10.1002/adma.202312948] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/30/2023] [Revised: 04/05/2024] [Indexed: 05/31/2024]
Abstract
Colloidal quantum dots (QDs), as a class of 0D semiconductor materials, have generated widespread interest due to their adjustable band gap, exceptional color purity, near-unity quantum yield, and solution-processability. With decades of dedicated research, the potential applications of quantum dots have garnered significant recognition in both the academic and industrial communities. Furthermore, the related quantum dot light-emitting diodes (QLEDs) stand out as one of the most promising contenders for the next-generation display technologies. Although QD-based color conversion films are applied to improve the color gamut of existing display technologies, the broader application of QLED devices remains in its nascent stages, facing many challenges on the path to commercialization. This review encapsulates the historical discovery and subsequent research advancements in QD materials and their synthesis methods. Additionally, the working mechanisms and architectural design of QLED prototype devices are discussed. Furthermore, the review surveys the latest advancements of QLED devices within the display industry. The narrative concludes with an examination of the challenges and perspectives of QLED technology in the foreseeable future.
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Affiliation(s)
- Junpeng Fan
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Changfeng Han
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Guojian Yang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Bin Song
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Materials Science and Engineering, Xiamen University, Xiamen, 361005, P. R. China
| | - Rui Xu
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Department of Mechanical, Materials and Manufacturing Engineering, University of Nottingham Ningbo China, Ningbo, 315100, P. R. China
| | - Chaoyu Xiang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Ting Zhang
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
| | - Lei Qian
- Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo, 315201, P. R. China
- Laboratory of Advanced Nano-Optoelectronic Materials and Devices, Qianwan Institute of CNITECH, Ningbo, 315000, P. R. China
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5
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Kwon TH, Kim HB, Kwak DG, Hahm D, Yoo S, Kim B, Bae WK, Kang MS. Quantum Dot-Based Three-Stack Tandem Near-Infrared-to-Visible Optoelectric Upconversion Devices. ACS NANO 2024; 18:21957-21965. [PMID: 39101968 DOI: 10.1021/acsnano.4c03206] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/06/2024]
Abstract
Quantum dots (QDs) exhibit size-tunable optical properties, making them suitable for efficient light-sensing and light-emitting devices. Tandem devices that can convert near-infrared (NIR) to visible (Vis) signals can be fabricated by integrating an NIR-sensing QD device with a Vis electroluminescence (EL) QD device. However, these devices require delicate control of the QD layer during processing to prevent damage to the predeposited QD layers in tandem devices during the subsequent deposition of other functional layers. This has restricted attainable device structures for QD-based upconversion devices. Herein, we present a modular approach for fabricating QD-based optoelectric upconversion devices. This approach involves using NIR QD-absorbing (Abs) and Vis QD-EL units as building modules, both of which feature cross-linked functional layers that exhibit structural tolerance to dissolution during subsequent solution-based processes. Tandem devices are fabricated in both normal (EL unit on Abs unit) and inverted (Abs unit on EL unit) structures using the same set of NIR QD-Abs and Vis QD-EL units stacked in opposite sequences. The tandem device in the normal structure exhibits a high NIR photon-to-Vis-photon conversion efficiency of up to 1.9% in a practical transmissive mode. By extending our modular approach, we also demonstrate a three-stack tandem device that incorporates a single NIR-absorbing unit coupled with two EL units, achieving an even higher conversion efficiency of up to 3.2%.
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Affiliation(s)
- Tae Hyun Kwon
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
| | - Hyeon Bin Kim
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
| | - Dong Gil Kwak
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
| | - Donghyo Hahm
- SKKU Advanced Institute of Nanotechnology (SAINT), Department of Display Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Seongju Yoo
- Department of Chemistry, Graduate School of Semiconductor Materials and Device Engineering and Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan 44919, Republic of Korea
| | - BongSoo Kim
- Department of Chemistry, Graduate School of Semiconductor Materials and Device Engineering and Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan 44919, Republic of Korea
| | - Wan Ki Bae
- SKKU Advanced Institute of Nanotechnology (SAINT), Department of Display Engineering, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
- Institute of Emergent Materials, Sogang University, Seoul 04107, Republic of Korea
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6
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Tan ZS, Jamal Z, Teo DWY, Ko HC, Seah ZL, Phua HY, Ho PKH, Png RQ, Chua LL. Optimization of fluorinated phenyl azides as universal photocrosslinkers for semiconducting polymers. Nat Commun 2024; 15:6354. [PMID: 39069548 PMCID: PMC11284223 DOI: 10.1038/s41467-024-50257-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/05/2023] [Accepted: 07/03/2024] [Indexed: 07/30/2024] Open
Abstract
Fluorinated phenyl azides (FPA) enable photo-structuring of π-conjugated polymer films for electronic device applications. Despite their potential, FPAs have faced limitations regarding their crosslinking efficiency, and more importantly, their impact on critical semiconductor properties, such as charge-carrier mobility. Here, we report that azide photolysis and photocrosslinking can achieve unity quantum efficiencies for specific FPAs. This suggests preferential nitrene insertion into unactivated C‒H bonds over benzazirine and ketenimine reactions, which we attribute to rapid interconversion between the initially formed hot states. Furthermore, we establish a structure‒activity relationship for carrier mobility quenching. The binding affinity of FPA crosslinker to polymer π-stacks governs its propensity for mobility quenching in both PM6 and PBDB-T used as model conjugated polymers. This binding affinity can be suppressed by FPA ring substitution, but varies in a non-trivial way with π-stack order. Utilizing the optimal FPA, photocrosslinking enables the fabrication of morphology-stabilized, acceptor-infiltrated donor polymer networks (that is, PBDB-T: ITIC and PM6: Y6) for solar cells. Our findings demonstrate the exceptional potential of the FPA photochemistry and offer a promising approach to address the challenges of modelling realistic molecular interactions in complex polymer morphologies, moving beyond the limitations of Flory‒Huggins mean field theory.
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Affiliation(s)
- Zhao-Siu Tan
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Zaini Jamal
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Desmond W Y Teo
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Hor-Cheng Ko
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore
| | - Zong-Long Seah
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore
| | - Hao-Yu Phua
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore
| | - Peter K H Ho
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore
| | - Rui-Qi Png
- Department of Physics, National University of Singapore, Lower Kent Ridge Road, S117550, Singapore, Singapore.
| | - Lay-Lay Chua
- Department of Chemistry, National University of Singapore, Lower Kent Ridge Road, S117552, Singapore, Singapore.
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Lee J, Jo H, Choi M, Park S, Oh J, Lee K, Bae Y, Rhee S, Roh J. Recent Progress on Quantum Dot Patterning Technologies for Commercialization of QD-LEDs: Current Status, Future Prospects, and Exploratory Approaches. SMALL METHODS 2024; 8:e2301224. [PMID: 38193264 DOI: 10.1002/smtd.202301224] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/11/2023] [Revised: 11/25/2023] [Indexed: 01/10/2024]
Abstract
Colloidal quantum dots (QDs) are widely regarded as advanced emissive materials with significant potential for display applications owing to their excellent optical properties such as high color purity, near-unity photoluminescence quantum yield, and size-tunable emission color. Building upon these attractive attributes, QDs have successfully garnered attention in the display market as down-conversion luminophores and now venturing into the realm of self-emissive displays, exemplified by QD light-emitting diodes (QD-LEDs). However, despite these advancements, there remains a relatively limited body of research on QD patterning technologies, which are crucial prerequisites for the successful commercialization of QD-LEDs. Thus, in this review, an overview of the current status and prospects of QD patterning technologies to accelerate the commercialization of QD-LEDs is provided. Within this review, a comprehensive investigation of three prevailing patterning methods: optical lithography, transfer printing, and inkjet printing are conducted. Furthermore, several exploratory QD patterning techniques that offer distinct advantages are introduced. This study not only paves the way for successful commercialization but also extends the potential application of QD-LEDs into uncharted frontiers.
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Affiliation(s)
- Jaeyeop Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Hyeona Jo
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Minseok Choi
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Sangwook Park
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Jiyoon Oh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Kyoungeun Lee
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Yeyun Bae
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
| | - Seunghyun Rhee
- Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), Daejeon, 34114, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, 2 Busandaehak-ro 63beon-gil, Geumjeong-gu, Busan, 46241, Republic of Korea
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Yi YQQ, Su F, Xu W, Zhang Q, Zhang S, Xie L, Su W, Cui Z, Luscombe CK. Nondestructive Direct Patterning of Both Hole Transport and Emissive Layers for Pixelated Quantum-Dot Light-Emitting Diodes. ACS NANO 2024; 18:15915-15924. [PMID: 38833535 DOI: 10.1021/acsnano.4c03458] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/06/2024]
Abstract
Considering the increasing demand for high-resolution light-emitting diodes (LEDs), it is important that direct fine patterning technologies for LEDs be developed, especially for quantum-dot LEDs (QLEDs). Traditionally, the patterning of QLEDs relies on resin-based photolithography techniques, requiring multiple steps and causing performance deterioration. Nondestructive direct patterning may provide an easy and stepwise method to achieve fine-pixelated units in QLEDs. In this study, two isomeric tridentate cross-linkers (X8/X9) are presented and can be blended into the hole transport layer (HTL) and the emissive layer (EML) of QLEDs. Because of their photosensitivity, the in situ cross-linking process can be efficiently triggered by ultraviolet irradiation, affording high solvent resistance and nondestructive direct patterning of the layers. Red QLEDs using the cross-linked HTL demonstrate an impressive external quantum efficiency of up to 22.45%. Through lithographic patterning enabled by X9, line patterns of HTL and EML films exhibit widths as narrow as 2 and 4 μm, respectively. Leveraging the patterned HTL and EML, we show the successful fabrication of pixelated QLED devices with an area size of 3 × 3 mm2, alongside the successful production of dual-color pixelated QLED devices. These findings showcase the promising potential of direct patterning facilitated by engineered cross-linkers for the cost-effective fabrication of pixelated QLED displays.
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Affiliation(s)
- Yuan-Qiu-Qiang Yi
- Printable Electronics Research Center, Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
- Pi-Conjugated Polymers Unit, Okinawa Institute of Science and Technology, 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
| | - Fuyan Su
- Printable Electronics Research Center, Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Wenya Xu
- Printable Electronics Research Center, Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Qing Zhang
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Shuo Zhang
- Printable Electronics Research Center, Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Liming Xie
- Printable Electronics Research Center, Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Wenming Su
- Printable Electronics Research Center, Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Zheng Cui
- Printable Electronics Research Center, Division of Nano-Devices Research, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, Jiangsu 215123, China
| | - Christine K Luscombe
- Pi-Conjugated Polymers Unit, Okinawa Institute of Science and Technology, 1919-1 Tancha, Onna-son, Kunigami-gun, Okinawa 904-0495, Japan
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9
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Kim J, Roh J, Park M, Lee C. Recent Advances and Challenges of Colloidal Quantum Dot Light-Emitting Diodes for Display Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2212220. [PMID: 36853911 DOI: 10.1002/adma.202212220] [Citation(s) in RCA: 21] [Impact Index Per Article: 21.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/28/2022] [Revised: 02/21/2023] [Indexed: 06/18/2023]
Abstract
Colloidal quantum dots (QDs) exhibit tremendous potential in display technologies owing to their unique optical properties, such as size-tunable emission wavelength, narrow spectral linewidth, and near-unity photoluminescence quantum yield. Significant efforts in academia and industry have achieved dramatic improvements in the performance of quantum dot light-emitting diodes (QLEDs) over the past decade, primarily owing to the development of high-quality QDs and optimized device architectures. Moreover, sophisticated patterning processes have also been developed for QDs, which is an essential technique for their commercialization. As a result of these achievements, some QD-based display technologies, such as QD enhancement films and QD-organic light-emitting diodes, have been successfully commercialized, confirming the superiority of QDs in display technologies. However, despite these developments, the commercialization of QLEDs is yet to reach a threshold, requiring a leap forward in addressing challenges and related problems. Thus, representative research trends, progress, and challenges of QLEDs in the categories of material synthesis, device engineering, and fabrication method to specify the current status and development direction are reviewed. Furthermore, brief insights into the factors to be considered when conducting research on single-device QLEDs are provided to realize active matrix displays. This review guides the way toward the commercialization of QLEDs.
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Affiliation(s)
- Jaehoon Kim
- Department of Energy and Mineral Resources Engineering, Dong-A University, Busan, 49315, Republic of Korea
| | - Jeongkyun Roh
- Department of Electrical Engineering, Pusan National University, Busan, 46241, Republic of Korea
| | - Myoungjin Park
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
| | - Changhee Lee
- Display Research Center, Samsung Display Co., Yongin-si, Gyeonggi-do, 17113, Republic of Korea
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10
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Liu D, Weng K, Zhao H, Wang S, Qiu H, Luo X, Lu S, Duan L, Bai S, Zhang H, Li J. Nondestructive Direct Optical Patterning of Perovskite Nanocrystals with Carbene-Based Ligand Cross-Linkers. ACS NANO 2024; 18:6896-6907. [PMID: 38376996 DOI: 10.1021/acsnano.3c07975] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 02/22/2024]
Abstract
Microscale patterning of colloidal perovskite nanocrystals (NCs) is essential for their integration in advanced device platforms, such as high-definition displays. However, perovskite NCs usually show degraded optical and/or electrical properties after patterning with existing approaches, posing a critical challenge for their optoelectronic applications. Here we achieve nondestructive, direct optical patterning of perovskite NCs with rationally designed carbene-based cross-linkers and demonstrate their applications in high-performance light-emitting diodes. We reveal that both the photochemical properties and the electronic structures of cross-linkers need to be carefully tailored to the material properties of perovskite NCs. This method produces high-resolution (∼4000 ppi) NC patterns with preserved photoluminescent quantum efficiencies and charge transport properties. Prototype light-emitting diodes with patterned/cross-linked NC layers show a maximum luminance of over 60000 cd m-2 and a peak external quantum efficiency of 16%, among the highest for patterned perovskite electroluminescent devices. Such a material-adapted patterning method enabled by designs from a photochemistry perspective could foster the applications of perovskite NCs in system-level electronic and optoelectronic devices.
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Affiliation(s)
- Dan Liu
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Kangkang Weng
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Haifeng Zhao
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610000, People's Republic of China
| | - Song Wang
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Hengwei Qiu
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Xiyu Luo
- Department of Chemistry, Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Shaoyong Lu
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
| | - Lian Duan
- Department of Chemistry, Key Laboratory of Organic Optoelectronics and Molecular Engineering (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, People's Republic of China
| | - Sai Bai
- Institute of Fundamental and Frontier Sciences, University of Electronic Science and Technology of China, Chengdu 610000, People's Republic of China
| | - Hao Zhang
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, People's Republic of China
| | - Jinghong Li
- Department of Chemistry, Center for Bioanalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology (Ministry of Education), Tsinghua University, Beijing 100084, People's Republic of China
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11
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Park SY, Lee S, Lee S, Kim J, Char K, Kang MS. Network of Inorganic Nanocrystals Can Swell: Study of Swelling-Induced Surface Instability. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2306366. [PMID: 37823672 DOI: 10.1002/smll.202306366] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/26/2023] [Revised: 09/24/2023] [Indexed: 10/13/2023]
Abstract
A unique organic-inorganic hybrid network composed of inorganic nanocores (ranging from semiconductors to metallic ones) interconnected through organic molecules can be produced by crosslinking the organic ligands of colloidal inorganic nanocrystals in assemblies. This work reports that this network, which is conventionally considered an inorganic film, can swell when exposed to a solvent because of the interaction between the solvent and the organic linkage within the network. Intriguingly, this work discovers that drying the solvent of the swollen organic-inorganic hybrid network can significantly affect the morphology owing to the swelling-induced compress stress, which is widely observed in various organic network systems. This work studies the surface instability of crosslinked organic-inorganic hybrid networks swollen by various organic solvents, which led to buckling delamination. Specifically, this work investigates the effects of the i) solvent-network interaction, ii) crosslinking density of the network, and iii) thickness of the film on the delamination behavior of the crosslinked network.
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Affiliation(s)
- Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Seongjae Lee
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Seunghan Lee
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Jungwook Kim
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Kookheon Char
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
- Institute of Emergent Materials, Ricci Institute of Basic Science, Sogang University, Seoul, 04107, South Korea
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12
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Lee T, Lee M, Seo H, Kim M, Chun B, Kwak J. Top-Emitting Quantum Dot Light-Emitting Diodes: Theory, Optimization, and Application. SMALL METHODS 2024; 8:e2300266. [PMID: 37183298 DOI: 10.1002/smtd.202300266] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2023] [Revised: 04/10/2023] [Indexed: 05/16/2023]
Abstract
The superior optical properties of colloidal quantum dots (QDs) have garnered significant broad interest from academia and industry owing to their successful application in self-emitting QD-based light-emitting diodes (QLEDs). In particular, active research is being conducted on QLEDs with top-emission device architectures (TQLEDs) owing to their advantages such as easy integration with conventional backplanes, high color purity, and excellent light extraction. However, due to the complicated optical phenomena and their highly sensitive optoelectrical properties to experimental variations, TQLEDs cannot be optimized easily for practical use. This review summarizes previous studies that have investigated top-emitting device structures and discusses ways to advance the performance of TQLEDs. First, theories relevant to the optoelectrical properties of TQLEDs are introduced. Second, advancements in device optimization are presented, where the underlying theories for each are considered. Finally, multilateral strategies for TQLEDs to enable their wider application to advanced industries are discussed. This work believes that this review can provide valuable insights for realizing commercial TQLEDs applicable to a broad range of applications.
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Affiliation(s)
- Taesoo Lee
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Minhyung Lee
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Hansol Seo
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Minjun Kim
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Beomsoo Chun
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
| | - Jeonghun Kwak
- Department of Electrical and Computer Engineering, Inter-university Semiconductor Research Center, and Soft Foundry Institute, Seoul National University, Seoul, 08826, Republic of Korea
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Wang Z, Dong S, Yuan W, Li J, Ma X, Liu F, Jiang X. Photo-Modulated Ionic Polymer as an Adaptable Electron Transport Material for Optically Switchable Pixel-Free Displays. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2309593. [PMID: 37967857 DOI: 10.1002/adma.202309593] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/17/2023] [Revised: 11/06/2023] [Indexed: 11/17/2023]
Abstract
In addition to electrically driven organic light-emitting diode (OLED) displays that rely on complicated and costly circuits for switching individual pixel illumination, developing a facile approach that structures pixel-free light-emitting displays with exceptional precision and spatial resolution via external photo-modulation holds significant importance for advancing consumer electronics. Here, optically switchable organic light-emitting pixel-free displays (OSPFDs) are presented and fabricated by judiciously combining an adaptive photosensitive ionic polymer as electron transport materials (ETM) with external photo-modulation as the switching mode while ensuring superior illumination performance and seamless imaging capability. By irradiating the solution-processed OSPFDs with light at specific wavelengths, efficient and reversible tuning of both electron transport and electroluminescence is achieved simultaneously. This remarkable control is achieved by altering the energetic matching within OSPFDs, which also exhibits a high level of universality and adjustable flexibility in the three primary color-based light-emitting displays. Moreover, the ease of creating and erasing desired pixel-free emitting patterns through a non-invasive photopatterning process within a single OSPFD is demonstrated, thereby rendering this approach promising for commercial displaying devices and highly precise pixelated illuminants.
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Affiliation(s)
- Zehong Wang
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
- Center for Smart Materials and Devices, State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, and School of Materials Science and Engineering, Wuhan University of Technology, Wuhan, 430070, P. R. China
| | - Shilong Dong
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Wenqiang Yuan
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Jin Li
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xiaodong Ma
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Feng Liu
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
| | - Xuesong Jiang
- School of Chemistry & Chemical Engineering, Frontiers Science Center for Transformative Molecules, State Key Laboratory for Metal Matrix Composite Materials, Shanghai Jiao Tong University, Shanghai, 200240, China
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14
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Yoon JI, Kim H, Kim M, Cho H, Kwon YA, Choi M, Park S, Kim T, Lee S, Jo H, Kim B, Cho JH, Park JS, Jeong S, Kang MS. P- and N-type InAs nanocrystals with innately controlled semiconductor polarity. SCIENCE ADVANCES 2023; 9:eadj8276. [PMID: 37948529 PMCID: PMC10637754 DOI: 10.1126/sciadv.adj8276] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/18/2023] [Accepted: 10/10/2023] [Indexed: 11/12/2023]
Abstract
InAs semiconductor nanocrystals (NCs) exhibit intriguing electrical/optoelectronic properties suitable for next-generation electronic devices. Although there is a need for both n- and p-type semiconductors in such devices, InAs NCs typically exhibit only n-type characteristics. Here, we report InAs NCs with controlled semiconductor polarity. Both p- and n-type InAs NCs can be achieved from the same indium chloride and aminoarsine precursors but by using two different reducing agents, diethylzinc for p-type and diisobutylaluminum hydride for n-type NCs, respectively. This is the first instance of semiconductor polarity control achieved at the synthesis level for InAs NCs and the entire semiconductor nanocrystal systems. Comparable field-effective mobilities for holes (3.3 × 10-3 cm2/V·s) and electrons (3.9 × 10-3 cm2/V·s) are achieved from the respective NC films. The mobility values allow the successful fabrication of complementary logic circuits, including NOT, NOR, and NAND comprising photopatterned p- and n-channels based on InAs NCs.
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Affiliation(s)
- Jong Il Yoon
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
| | - Hyoin Kim
- Department of Energy Science (DOES), Center for Artificial Atoms, and Sungkyunkwan Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Meeree Kim
- Department of Energy Science (DOES), Center for Artificial Atoms, and Sungkyunkwan Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Hwichan Cho
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
| | - Yonghyun Albert Kwon
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Mahnmin Choi
- Department of Energy Science (DOES), Center for Artificial Atoms, and Sungkyunkwan Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seongmin Park
- Department of Energy Science (DOES), Center for Artificial Atoms, and Sungkyunkwan Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Taewan Kim
- Department of Energy Science (DOES), Center for Artificial Atoms, and Sungkyunkwan Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Seunghan Lee
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
| | - Hyunwoo Jo
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
| | - BongSoo Kim
- Department of Chemistry, Graduate School of Semiconductor Materials and Device Engineering, and Graduate School of Cabon Neutrality, Ulsan National Institute of Science and Technology (UNIST), Ulsan 44919, Republic of Korea
| | - Jeong Ho Cho
- Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea
| | - Ji-Sang Park
- SKKU Advanced Institute of Nanotechnology (SAINT) and Department of Nano Engineering, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Sohee Jeong
- Department of Energy Science (DOES), Center for Artificial Atoms, and Sungkyunkwan Institute of Energy Science and Technology (SIEST), Sungkyunkwan University, Suwon 16419, Republic of Korea
- Department of Future Energy Engineering (DFEE), Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 04107, Republic of Korea
- Institute of Emergent Materials, Ricci Institute of Basic Science, Sogang University, Seoul 04107, Republic of Korea
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15
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Kim J, Kweon H, Lee M, Kang M, Lee S, An S, Lee W, Choi S, Choi H, Seong Y, Ham H, Cha H, Lim J, Kim DH, Kim B, Chung DS. Exciton-Scissoring Perfluoroarenes Trigger Photomultiplication in Full Color Organic Image Sensors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2302786. [PMID: 37421369 DOI: 10.1002/adma.202302786] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 03/25/2023] [Revised: 05/17/2023] [Accepted: 07/07/2023] [Indexed: 07/10/2023]
Abstract
An unprecedented but useful functionality of perfluoroarenes to enable exciton scissoring in photomultiplication-type organic photodiodes (PM-OPDs) is reported. Perfluoroarenes that are covalently connected to polymer donors via a photochemical reaction enable the demonstration of high external quantum efficiency and B-/G-/R-selective PM-OPDs without the use of conventional acceptor molecules. The operation mechanism of the suggested perfluoroarene-driven PM-OPDs, how covalently bonded polymer donor:perfluoroarene PM-OPDs can perform as effectively as polymer donor:fullerene blend-based PM-OPDs, is investigated. By employing a series of arenes and conducting steady-state/time-resolved photoluminescence and transient absorption spectroscopy analyses, it is found that interfacial band bending between the perfluoroaryl group and polymer donor is responsible for exciton scissoring and subsequent electron trapping, which induces photomultiplication. Owing to the acceptor-free and covalently interconnected photoactive layer in the suggested PM-OPDs, superior operational and thermal stabilities are observed. Finally, finely patterned B-/G-/R-selective PM-OPD arrays that enable the construction of highly sensitive passive matrix-type organic image sensors are demonstrated.
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Affiliation(s)
- Juhee Kim
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Hyukmin Kweon
- Department of Chemical Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Myeongjae Lee
- Department of Chemistry, Korea University, Seoul, 02841, Republic of Korea
| | - Mingyun Kang
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Sangjun Lee
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Sanghyeok An
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
| | - Wonjong Lee
- Graduate School of Energy Science & Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Seokran Choi
- Department of Chemical Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Hanbin Choi
- Department of Chemical Engineering, Hanyang University, Seoul, 04763, Republic of Korea
| | - Yujin Seong
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Hyobin Ham
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Hyojung Cha
- Department of Hydrogen and Renewable Energy, Kyungpook National University, Daegu, 41566, Republic of Korea
| | - Jongchul Lim
- Graduate School of Energy Science & Technology, Chungnam National University, Daejeon, 34134, Republic of Korea
| | - Do Hwan Kim
- Department of Chemical Engineering, Hanyang University, Seoul, 04763, Republic of Korea
- Institute of Nano Science and Technology, Hanyang University, Seoul, 04763, Republic of Korea
- Clean-Energy Research Institute, Hanyang University, Seoul, 04763, Republic of Korea
| | - BongSoo Kim
- Graduate School of Carbon Neutrality, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan, 44919, Republic of Korea
- Department of Chemistry, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
- Graduate School of Semiconductor Materials and Device Engineering, Ulsan National Institute of Science and Technology (UNIST), 50 UNIST-gil, Ulsan, 44919, Republic of Korea
| | - Dae Sung Chung
- Department of Chemical Engineering, Pohang University of Science and Technology (POSTECH), Pohang, 37673, Republic of Korea
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16
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Park SY, Lee S, Yang J, Kang MS. Patterning Quantum Dots via Photolithography: A Review. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2300546. [PMID: 36892995 DOI: 10.1002/adma.202300546] [Citation(s) in RCA: 4] [Impact Index Per Article: 4.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/17/2023] [Revised: 02/28/2023] [Indexed: 06/18/2023]
Abstract
Pixelating patterns of red, green, and blue quantum dots (QDs) is a critical challenge for realizing high-end displays with bright and vivid images for virtual, augmented, and mixed reality. Since QDs must be processed from a solution, their patterning process is completely different from the conventional techniques used in the organic light-emitting diode and liquid crystal display industries. Although innovative QD patterning technologies are being developed, photopatterning based on the light-induced chemical conversion of QD films is considered one of the most promising methods for forming micrometer-scale QD patterns that satisfy the precision and fidelity required for commercialization. Moreover, the practical impact will be significant as it directly exploits mature photolithography technologies and facilities that are widely available in the semiconductor industry. This article reviews recent progress in the effort to form QD patterns via photolithography. The review begins with a general description of the photolithography process. Subsequently, different types of photolithographical methods applicable to QD patterning are introduced, followed by recent achievements using these methods in forming high-resolution QD patterns. The paper also discusses prospects for future research directions.
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Affiliation(s)
- Se Young Park
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Seongjae Lee
- School of Chemical and Biological Engineering, Seoul National University, Seoul, 08826, South Korea
| | - Jeehye Yang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
| | - Moon Sung Kang
- Department of Chemical and Biomolecular Engineering, Sogang University, Seoul, 04107, South Korea
- Institute of Emergent Materials, Sogang University, Seoul, 04107, South Korea
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17
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Pan JA, Cho H, Coropceanu I, Wu H, Talapin DV. Stimuli-Responsive Surface Ligands for Direct Lithography of Functional Inorganic Nanomaterials. Acc Chem Res 2023; 56:2286-2297. [PMID: 37552212 DOI: 10.1021/acs.accounts.3c00226] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/09/2023]
Abstract
ConspectusColloidal nanocrystals (NCs) have emerged as a diverse class of materials with tunable composition, size, shape, and surface chemistry. From their facile syntheses to unique optoelectronic properties, these solution-processed nanomaterials are a promising alternative to materials grown as bulk crystals or by vapor-phase methods. However, the integration of colloidal nanomaterials in real-world devices is held back by challenges in making patterned NC films with the resolution, throughput, and cost demanded by device components and applications. Therefore, suitable approaches to pattern NCs need to be established to aid the transition from individual proof-of-concept NC devices to integrated and multiplexed technological systems.In this Account, we discuss the development of stimuli-sensitive surface ligands that enable NCs to be patterned directly with good pattern fidelity while retaining desirable properties. We focus on rationally selected ligands that enable changes in the NC dispersibility by responding to light, electron beam, and/or heat. First, we summarize the fundamental forces between colloidal NCs and discuss the principles behind NC stabilization/destabilization. These principles are applied to understanding the mechanisms of the NC dispersibility change upon stimuli-induced ligand modifications. Six ligand-based patterning mechanisms are introduced: ligand cross-linking, ligand decomposition, ligand desorption, in situ ligand exchange, ion/ligand binding, and ligand-aided increase of ionic strength. We discuss examples of stimuli-sensitive ligands that fall under each mechanism, including their chemical transformations, and address how these ligands are used to pattern either sterically or electrostatically stabilized colloidal NCs. Following that, we explain the rationale behind the exploration of different types of stimuli, as well as the advantages and disadvantages of each stimulus.We then discuss relevant figures-of-merit that should be considered when choosing a particular ligand chemistry or stimulus for patterning NCs. These figures-of-merit pertain to either the pattern quality (e.g., resolution, edge and surface roughness, layer thickness), or to the NC material quality (e.g., photo/electro-luminescence, electrical conductivity, inorganic fraction). We outline the importance of these properties and provide insights on optimizing them. Both the pattern quality and NC quality impact the performance of patterned NC devices such as field-effect transistors, light-emitting diodes, color-conversion pixels, photodetectors, and diffractive optical elements. We also give examples of proof-of-concept patterned NC devices and evaluate their performance. Finally, we provide an outlook on further expanding the chemistry of stimuli-sensitive ligands, improving the NC pattern quality, progress toward 3D printing, and other potential research directions. Ultimately, we hope that the development of a patterning toolbox for NCs will expedite their implementation in a broad range of applications.
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Affiliation(s)
- Jia-Ahn Pan
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States
| | - Himchan Cho
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Republic of Korea
| | - Igor Coropceanu
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Haoqi Wu
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
| | - Dmitri V Talapin
- Department of Chemistry, James Franck Institute, and Pritzker School of Molecular Engineering, University of Chicago, Chicago, Illinois 60637, United States
- Center for Nanoscale Materials, Argonne National Laboratory, Argonne, Illinois 60439, United States
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18
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Maeng S, Park SJ, Lee J, Lee H, Choi J, Kang JK, Cho H. Direct photocatalytic patterning of colloidal emissive nanomaterials. SCIENCE ADVANCES 2023; 9:eadi6950. [PMID: 37585523 PMCID: PMC10431700 DOI: 10.1126/sciadv.adi6950] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/14/2023] [Accepted: 07/17/2023] [Indexed: 08/18/2023]
Abstract
We present a universal direct photocatalytic patterning method that can completely preserve the optical properties of perovskite nanocrystals (PeNCs) and other emissive nanomaterials. Solubility change of PeNCs is achieved mainly by a photoinduced thiol-ene click reaction between specially tailored surface ligands and a dual-role photocatalytic reagent, pentaerythritol tetrakis(3-mercaptopropionate) (PTMP), where the thiol-ene reaction is enabled at a low light intensity dose (~ 30 millijoules per square centimeter) by the strong photocatalytic activity of PeNCs. The photochemical reaction mechanism was investigated using various analyses at each patterning step. The PTMP also acts as a defect passivation agent for the PeNCs and even enhances their photoluminescence quantum yield (by ~5%) and photostability. Multicolor patterns of cesium lead halide (CsPbX3)PeNCs were fabricated with high resolution (<1 micrometer). Our method is widely applicable to other classes of nanomaterials including colloidal cadmium selenide-based and indium phosphide-based quantum dots and light-emitting polymers; this generality provides a nondestructive and simple way to pattern various functional materials and devices.
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Affiliation(s)
| | | | - Jaehwan Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Hyungdoh Lee
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
| | - Jonghui Choi
- Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), 291, Daehak-ro, Yuseong-gu, Daejeon, Republic of Korea
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Lin Q, Zhu Y, Wang Y, Li D, Zhao Y, Liu Y, Li F, Huang W. Flexible Quantum Dot Light-Emitting Device for Emerging Multifunctional and Smart Applications. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2210385. [PMID: 36880739 DOI: 10.1002/adma.202210385] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/09/2022] [Revised: 02/13/2023] [Indexed: 06/18/2023]
Abstract
Quantum dot light-emitting diodes (QLEDs), owing to their exceptional performances in device efficiency, color purity/tunability in the visible region and solution-processing ability on various substrates, become a potential candidate for flexible and ultrathin electroluminescent (EL) lighting and display. Moreover, beyond the lighting and display, flexible QLEDs are enabled with endless possibilities in the era of the internet of things and artificial intelligence by acting as input/output ports in wearable integrated systems. Challenges remain in the development of flexible QLEDs with the goals for high performance, excellent flexibility/even stretchability, and emerging applications. In this paper, the recent developments of QLEDs including quantum dot materials, working mechanism, flexible/stretchable strategies and patterning strategies, and highlight its emerging multifunctional integrations and smart applications covering wearable optical medical devices, pressure-sensing EL devices, and neural smart EL devices, are reviewed. The remaining challenges are also summarized and an outlook on the future development of flexible QLEDs made. The review is expected to offer a systematic understanding and valuable inspiration for flexible QLEDs to simultaneously satisfy optoelectronic and flexible properties for emerging applications.
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Affiliation(s)
- Qinghong Lin
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yangbin Zhu
- School of Intelligent Manufacturing and Electronic Engineering, Wenzhou University of Technology, Wenzhou, 325035, P. R. China
| | - Yue Wang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Deli Li
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yi Zhao
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Yang Liu
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
| | - Fushan Li
- Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350116, P. R. China
| | - Wei Huang
- Strait Institute of Flexible Electronics (SIFE, Future Technologies), Fujian Normal University, Fuzhou, Fujian, 350117, P. R. China
- Strait Laboratory of Flexible Electronics (SLoFE), Fuzhou, Fujian, 350117, P. R. China
- Frontiers Science Center for Flexible Electronics (FSCFE), MIIT Key Laboratory of Flexible Electronics (KLoFE), Northwestern Polytechnical University (NPU), Xi'an, 710072, P. R. China
- Key Laboratory of Flexible Electronics (KLOFE) & Institute of Advanced Materials (IAM), Nanjing Tech University (NanjingTech), Nanjing, 211816, P. R. China
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Antolini F. Direct Optical Patterning of Quantum Dots: One Strategy, Different Chemical Processes. NANOMATERIALS (BASEL, SWITZERLAND) 2023; 13:2008. [PMID: 37446523 DOI: 10.3390/nano13132008] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/09/2023] [Revised: 06/30/2023] [Accepted: 07/03/2023] [Indexed: 07/15/2023]
Abstract
Patterning, stability, and dispersion of the semiconductor quantum dots (scQDs) are three issues strictly interconnected for successful device manufacturing. Recently, several authors adopted direct optical patterning (DOP) as a step forward in photolithography to position the scQDs in a selected area. However, the chemistry behind the stability, dispersion, and patterning has to be carefully integrated to obtain a functional commercial device. This review describes different chemical strategies suitable to stabilize the scQDs both at a single level and as an ensemble. Special attention is paid to those strategies compatible with direct optical patterning (DOP). With the same purpose, the scQDs' dispersion in a matrix was described in terms of the scQD surface ligands' interactions with the matrix itself. The chemical processes behind the DOP are illustrated and discussed for five different approaches, all together considering stability, dispersion, and the patterning itself of the scQDs.
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Affiliation(s)
- Francesco Antolini
- Fusion and Technologies for Nuclear Safety and Security Department, Physical Technology for Safety and Health Division, ENEA C.R. Frascati, Via E. Fermi 45, 00044 Frascati, Italy
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Fu Z, Zhou L, Yin Y, Weng K, Li F, Lu S, Liu D, Liu W, Wu L, Yang Y, Li H, Duan L, Xiao H, Zhang H, Li J. Direct Photo-Patterning of Efficient and Stable Quantum Dot Light-Emitting Diodes via Light-Triggered, Carbocation-Enabled Ligand Stripping. NANO LETTERS 2023; 23:2000-2008. [PMID: 36826387 DOI: 10.1021/acs.nanolett.3c00146] [Citation(s) in RCA: 5] [Impact Index Per Article: 5.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Next generation displays based on quantum dot light-emitting diodes (QLEDs) require robust patterning methods for quantum dot layers. However, existing patterning methods mostly yield QLEDs with performance far inferior to the state-of-the-art individual devices. Here, we report a light-triggered, carbocation-enabled ligand stripping (CELS) approach to pattern QLEDs with high efficiency and stability. During CELS, photogenerated carbocations from triphenylmethyl chlorides remove native ligands of quantum dots, thereby producing patterns at microscale precision. Chloride anions passivate surface defects and endow patterned quantum dots with preserved photoluminescent quantum yields. It works for both cadmium-based and heavy-metal-free quantum dots. CELS-patterned QLEDs show remarkable external quantum efficiencies (19.1%, 17.5%, 12.0% for red, green, blue, respectively) and a long operation lifetime (T95 at 1000 nits up to 8700 h). Both are among the highest for patterned QLEDs and approach the records for nonpatterned devices, which makes CELS promising for building high-performance QLED displays and related integrated devices.
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Affiliation(s)
- Zhong Fu
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Likuan Zhou
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Yue Yin
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Kangkang Weng
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Fu Li
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Shaoyong Lu
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Dan Liu
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Wenyong Liu
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Longjia Wu
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Yixing Yang
- TCL Research, No. 1001 Zhongshan Park Road, Shenzhen, Guangdong 518067, China
| | - Haifang Li
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Lian Duan
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, China
| | - Hai Xiao
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
| | - Hao Zhang
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
- Laboratory of Flexible Electronic Technology, Tsinghua University, Beijing 100084, China
| | - Jinghong Li
- Department of Chemistry, Center for BioAnalytical Chemistry, Key Laboratory of Bioorganic Phosphorus Chemistry & Chemical Biology of Ministry of Education, Tsinghua University, Beijing 100084, China
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