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Wang W, Tian W, Chen F, Wang J, Zhai W, Li L. Filter-Less Color-Selective Photodetector Derived from Integration of Parallel Perovskite Photoelectric Response Units. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024:e2404968. [PMID: 38897182 DOI: 10.1002/adma.202404968] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/06/2024] [Revised: 06/07/2024] [Indexed: 06/21/2024]
Abstract
Color-selective photodetectors (PDs) play an indispensable role in spectral recognition, image sensing, and other fields. Nevertheless, complex filters and delicate optical paths in such devices significantly increase their complexity and size, which subsequently impede their integration in smart optoelectronic chips for universal applications. This work demonstrates the successful fabrication of filter-less color-selective perovskite PDs by integrating three perovskite units with different photoresponse on a single chip. The variation in photoresponse is attributed to different quantities of SnO2 nanoparticles, synthesized through controlled ultrasonic treatment on the surface of the electron transportation layer SnS2, which selectively absorb short-wavelength light, thus increasing the relative transmittance of long-wavelength light and enhancing the photoresponse of the units to long wavelengths. By integrating any two units and deriving the formula for the wavelength to the responsivity ratio, a wavelength sensor is developed which can accurately identify incident light in the range of 400-700 nm with a minimum error <3 nm. Furthermore, the device integrating three units with different photoresponse can identify red, green and blue in polychromatic light to achieve color imaging with a relative error <6%. This work provides valuable insights into wavelength identification and color imaging of perovskite PDs.
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Affiliation(s)
- Wencan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Wei Tian
- School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Fang Chen
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Jianyuan Wang
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Wei Zhai
- MOE Key Laboratory of Materials Physics and Chemistry under Extraordinary Conditions, Northwestern Polytechnical University, Xi'an, 710072, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Frontier Material Physics and Devices, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
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2
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Liu T, Wang J, Liu Y, Min L, Wang L, Yuan Z, Sun H, Huang L, Li L, Meng X. Cyano-Coordinated Tin Halide Perovskites for Wearable Health Monitoring and Weak Light Imaging. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2024; 36:e2400090. [PMID: 38433566 DOI: 10.1002/adma.202400090] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/02/2024] [Revised: 02/24/2024] [Indexed: 03/05/2024]
Abstract
Low-toxicity tin halide perovskites with excellent optoelectronic properties are promising candidates for photodetection. However, tin halide perovskite photodetectors have suffered from high dark current owing to uncontrollable Sn2+ oxidation. Here, 2-cyanoethan-1-aminium iodide (CNI) is introduced in CH(NH2)2SnI3 (FASnI3) perovskite films to inhibit Sn2+ oxidation by the strong coordination interaction between the cyano group (C≡N) and Sn2+. Consequently, FASnI3-CNI films exhibit reduced nonradiative recombination and lower trap density. The self-powered photodetector based on FASnI3-CNI exhibits low dark current (1.04 × 10-9 A cm-2), high detectivity (2.2 × 1013 Jones at 785 nm), fast response speed (2.62 µs), and good stability. Mechanism studies show the increase in the activation energy required for thermal emission and generated carriers, leading to a lower dark current in the FASnI3-CNI photodetector. In addition, flexible photodetectors based on FASnI3-CNI, exhibiting high detectivity and fast response speed, are employed in wearable electronics to monitor the human heart rate under weak light and zero bias conditions. Finally, the FASnI3-CNI perovskite photodetectors are integrated with a 32 × 32 thin-film transistor backplane, capable of ultraweak light (170 nW cm-2) real-time imaging with high contrast, and zero power consumption, demonstrating the great potential for image sensor applications.
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Affiliation(s)
- Tianhua Liu
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Junfang Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Yongsi Liu
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liangliang Min
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Lixia Wang
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Ziquan Yuan
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Haoxuan Sun
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Le Huang
- School of Materials and Energy, Guangdong University of Technology, Guangzhou, 510006, China
| | - Liang Li
- School of Physical Science and Technology, Jiangsu Key Laboratory of Thin Films, Center for Energy Conversion Materials & Physics (CECMP), Soochow University, Suzhou, 215006, China
| | - Xiangyue Meng
- School of Optoelectronics, Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100049, China
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3
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Zhang Z, Zhai W, Li G, Zheng W, Li X, Huang L, Chen L, Lin L, Yuan G, Yan Z, Liu JM. Performance Enhancement of Tin-Based Perovskite Photodetectors through Bifunctional Cesium Fluoride Engineering. ACS APPLIED MATERIALS & INTERFACES 2024. [PMID: 38437709 DOI: 10.1021/acsami.3c17687] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 03/06/2024]
Abstract
Tin halide perovskites are rising as promising candidates for next-generation optoelectronic materials due to their good optoelectronic properties and relatively low toxicity. However, the high defect density and the easy oxidation of Sn2+ have limited their optoelectronic performance. Herein, we report the treatment of the FASnI3 (formamidinium tin, FA) perovskite film by a bifunctional cesium fluoride (CsF) additive, which improves the film quality and significantly enhances the photoelectric performance. The responsivity of the perovskite-based photodetector (PD) with an optimal CsF concentration of 15% is over 60 times larger than that of the PD without CsF. It indicates that both the Cs substitution and the fluoride anion additive from CsF inhibit the oxidation of Sn2+, optimize the crystal growth, and passivate the defects, demonstrating the dual roles of the CsF additive in improving the photoelectric performance. This work offers valuable insights into the additive selection for developing high-quality tin-based perovskite films and devices.
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Affiliation(s)
- Zhihang Zhang
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenjing Zhai
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Guangyuan Li
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Wenhao Zheng
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Xinyu Li
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lin Huang
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Liufang Chen
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Lin Lin
- Department of Applied Physics, College of Science, Nanjing Forestry University, Nanjing 210037, China
| | - Guoliang Yuan
- School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China
| | - Zhibo Yan
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
| | - Jun-Ming Liu
- National Laboratory of Solid-State Microstructures, School of Physics, and Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, China
- Institute for Advanced Materials, Hubei Normal University, Huangshi 435002, Hubei, China
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4
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Cai G, Li Y, Zhang Y, Jiang X, Chen Y, Qu G, Zhang X, Xiao S, Han J, Yu S, Kivshar Y, Song Q. Compact angle-resolved metasurface spectrometer. NATURE MATERIALS 2024; 23:71-78. [PMID: 37919349 DOI: 10.1038/s41563-023-01710-1] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/25/2023] [Accepted: 10/02/2023] [Indexed: 11/04/2023]
Abstract
Light scattered or radiated from a material carries valuable information on the said material. Such information can be uncovered by measuring the light field at different angles and frequencies. However, this technique typically requires a large optical apparatus, hampering the widespread use of angle-resolved spectroscopy beyond the lab. Here we demonstrate compact angle-resolved spectral imaging by combining a tunable metasurface-based spectrometer array and a metalens. With this approach, even with a miniaturized spectrometer footprint of only 4 × 4 μm2, we demonstrate a wavelength accuracy of 0.17 nm, spectral resolution of 0.4 nm and a linear dynamic range of 149 dB. Moreover, our spectrometer has a detection limit of 1.2 fJ, and can be patterned to an array for spectral imaging. Placing such a spectrometer array directly at the back focal plane of a metalens, we achieve an angular resolution of 4.88 × 10-3 rad. Our angle-resolved spectrometers empowered by metalenses can be employed towards enhancing advanced optical imaging and spectral analysis applications.
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Affiliation(s)
- Guiyi Cai
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China
| | - Yanhao Li
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China
| | - Yao Zhang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China
| | - Xiong Jiang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China
| | - Yimu Chen
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China
| | - Geyang Qu
- Pengcheng Laboratory, Shenzhen, People's Republic of China
| | - Xudong Zhang
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China
| | - Shumin Xiao
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China.
- Pengcheng Laboratory, Shenzhen, People's Republic of China.
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, People's Republic of China.
| | - Jiecai Han
- National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin, People's Republic of China
| | - Shaohua Yu
- Pengcheng Laboratory, Shenzhen, People's Republic of China.
| | - Yuri Kivshar
- Nonlinear Physics Center, Research School of Physics, Australian National University, Canberra, Australian Capital Territory, Australia.
- Qingdao Innovation and Development Center, Harbin Engineering University, Qingdao, People's Republic of China.
| | - Qinghai Song
- Ministry of Industry and Information Technology Key Lab of Micro-Nano Optoelectronic Information System, Guangdong Provincial Key Laboratory of Semiconductor Optoelectronic Materials and Intelligent Photonic Systems, Harbin Institute of Technology, Shenzhen, People's Republic of China.
- Pengcheng Laboratory, Shenzhen, People's Republic of China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, People's Republic of China.
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Gui P, Sun Y, Yang L, Xia Z, Wang S, Wang Z, Chen Z, Zeng W, Ren X, Wang S, Fang G. Surface Microstructure Engineering in MAPbBr 3 Microsheets for Performance-Enhanced Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2023; 15:59955-59963. [PMID: 38085577 DOI: 10.1021/acsami.3c15029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 12/28/2023]
Abstract
Metal halide-perovskite-based photodetectors have recently emerged as a class of promising optoelectronic devices in various fields. Meanwhile, nano/microstructuring perovskite-based photodetectors are a facile integration with complementary metal-oxide semiconductors for miniaturized imaging systems. However, there are still challenges to be overcome in reducing the losses caused by light reflection on the surface of microstructural perovskites. In this work, surface microstructure engineering is employed in MAPbBr3 microsheets for reducing light reflection and improving light absorption, resulting in high-performance perovskite photodetectors. MAPbBr3 microsheets, which possess different surface morphologies of flat, upright hemisphere arrays and inverted hemisphere arrays (IHAs), are fabricated by a simple microstructure template-assisted space confinement process. The light absorption capacity of IHA MAPbBr3 is significantly higher than that of the other two structures. Hence, IHA photodetectors with excellent figures of merit, including low dark current, decent responsivity, and fast speed, are achieved. Furthermore, the noise of the IHA photodetectors is only ∼10-13 A/H z , which results in the superior sensitivity for weak light detection with a specific detectivity up to 1011 Jones. Our results demonstrate that surface engineering is a simple, low-cost, yet effective approach to improve the performance of nano-/micro-optoelectronic devices.
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Affiliation(s)
- Pengbin Gui
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Yanming Sun
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Liangpan Yang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Zhaosheng Xia
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Shuxin Wang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
| | - Zhouyin Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Zhiliang Chen
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Wei Zeng
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Xingang Ren
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Siliang Wang
- Information Materials and Intelligent Sensing Laboratory of Anhui Province, Industry-Education-Research Institute of Advanced Materials and Technology for Integrated Circuits, School of Electronic and Information Engineering, Anhui University, Hefei, Anhui 230601, People's Republic of China
| | - Guojia Fang
- Key Lab of Artificial Micro- and Nano-Structures of Ministry of Education of China, School of Physics and Technology, Wuhan University, Wuhan, Hubei 430072, People's Republic of China
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6
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Wang S, Qi L, Xia Z, Wang W, Yue D, Wang S, Su S. Polarization-Sensitive Detector Based on MoTe 2/WTe 2 Heterojunction for Broadband Optoelectronic Imaging. J Phys Chem Lett 2023; 14:10509-10516. [PMID: 37970815 DOI: 10.1021/acs.jpclett.3c02685] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/19/2023]
Abstract
Polarization-sensitive detectors have significant applications in modern communication and information processing. In this study. We present a polarization-sensitive detector based on a MoTe2/WTe2 heterojunction, where WTe2 forms a favorable bandgap structure with MoTe2 after forming the heterojunction. This enhances the carrier separation efficiency and photoelectric response. We successfully achieved wide spectral detection ranging from visible to near-infrared light. Specifically, under zero bias, our photodetector exhibits a responsivity (R) of 0.6 A/W and a detectivity (D*) of 3.6 × 1013 Jones for 635 nm laser illumination. Moreover, the photoswitching ratio can approach approximately 6.3 × 105. Importantly, the polarization sensitivity can reach 3.5 (5.2) at 635 (1310) nm polarized light at zero bias. This study both unveils potential for utilizing MoTe2/WTe2 heterojunctions as polarization-sensitive detectors and provides novel insights for developing high-performance optoelectronic devices.
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Affiliation(s)
- Sujuan Wang
- Institute of Applied Physics and Materials Engineering, University of Macau, 999078 Macao SAR, P.R. China
| | - Ligan Qi
- Institute of Semiconductor Science and Technology, South China Normal University, Guangzhou 510631, P. R. China
| | - Zhonghui Xia
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
| | - Wenhai Wang
- College of Electrical Engineering, Hebei University of Architecture, Zhangjiakou 075000, P.R. China
| | - Dewu Yue
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen 518172, P.R. China
| | - Shuangpeng Wang
- Information Technology Research Institute, Shenzhen Institute of Information Technology, Shenzhen 518172, P.R. China
- Institute of Applied Physics and Materials Engineering, University of Macau, 999078 Macao SAR, P.R. China
| | - Shichen Su
- Institute of Semiconductor Science and Technology, South China Normal University, Foshan 528225, P. R. China
- Guangdong Engineering Research Center of Optoelectronic Functional Materials and Devices, Guangzhou 510631, P.R. China
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7
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Wu Y, Li Z, Lei Y, Jin Z. Metal-Free Perovskites for X-Ray Detection. Chemistry 2023; 29:e202301536. [PMID: 37427493 DOI: 10.1002/chem.202301536] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 05/16/2023] [Revised: 07/07/2023] [Accepted: 07/08/2023] [Indexed: 07/11/2023]
Abstract
Metal-free perovskites are a promising class of materials for X-ray detection due to their unique structural, optical, and electrical properties. Here, we first delve into the stoichiometry and geometric argument of metal-free perovskites. Followed, the alternative A/B/X ions and hydrogen-bonding are clearly introduced to further optimize the materials' stability and properties. Finally, we provide a comprehensive overview of their potential applications for flexible X-ray images and prospects for metal-free perovskite development. In conclusion, metal-free perovskite is a promising material for X-ray detection. Its stoichiometric and geometric parameters, ion, and hydrogen bond selection, and application prospects are worthy of further study.
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Affiliation(s)
- Yujiang Wu
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
| | - Zhizai Li
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
| | - Yutian Lei
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
| | - Zhiwen Jin
- School of Materials and Energy School of Physical Science and Technolog Lanzhou Center for Theoretical Physics Key Laboratory of Theoretical Physics of Gansu Province, Lanzhou University, Lanzhou, 730000, China
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8
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Duan S, Sun Q, Liu G, Deng J, Meng X, Shen B, Hu D, Kang B, Silva SRP. Synergistic Surface Defect Passivation of Ionic Liquids for Efficient and Stable MAPbI 3-Based Inverted Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023; 15:46483-46492. [PMID: 37748040 DOI: 10.1021/acsami.3c08827] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/27/2023]
Abstract
Organic-inorganic hybrid perovskite solar cells are fabricated using polycrystalline perovskite thin films, which possess high densities of point and surface defects. The surface defects of perovskite thin films are the key factors that affect the device performance. Therefore, the reduction of harmful defects is the primary task for improving device performance. Therefore, in this study, high-quality perovskite thin films are prepared using an ionic liquid, dithiocarbamate diethylamine (DADA), to passivate the interface. The electron-rich sulfur atom in the DADA molecule chelates with the uncoordinated lead ion in the perovskite films, and the diethylammonium cation forms a hydrogen bond with the free iodine ion, which further improves the passivation. The synergistic passivation and improved morphology of the perovskite thin films substantially reduce the number of charged defects on the film surface and prolong the carrier lifetime. In addition, the DADA surface treatment increases the work function of the perovskite film, which is beneficial for carrier transport. Under standard solar-lighting conditions, the power conversion efficiency (PCE) of the device increases from 19.13 to 21.36%, and the fill factor is as high as 83.17%. Owing to both the hydrophobicity of DADA molecules and the passivation of ion defects, the PCE of the device remains above 80%, even for the device stored for 500 h in air at a relative humidity of 65%, and the device stability is substantially improved.
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Affiliation(s)
- Shaocong Duan
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Qing Sun
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Gang Liu
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Jianguo Deng
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Xiangxin Meng
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Bo Shen
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Die Hu
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - Bonan Kang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012, China
| | - S Ravi P Silva
- Nanoelectronics Centre, Advanced Technology Institute, University of Surrey, Guildford, Surrey GU2 7XH, U.K
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9
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Lin S, Liu C, Chen X, Zhang Y, Lin H, Yu X, Bo Y, Lu Y. Self-Driven Photo-Polarized Water Molecule-Triggered Graphene-Based Photodetector. RESEARCH (WASHINGTON, D.C.) 2023; 6:0202. [PMID: 37529624 PMCID: PMC10389694 DOI: 10.34133/research.0202] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 03/07/2023] [Accepted: 07/05/2023] [Indexed: 08/03/2023]
Abstract
Flowing water can be used as an energy source for generators, providing a major part of the energy for daily life. However, water is rarely used for information or electronic devices. Herein, we present the feasibility of a polarized liquid-triggered photodetector in which polarized water is sandwiched between graphene and a semiconductor. Due to the polarization and depolarization processes of water molecules driven by photogenerated carriers, a photo-sensitive current can be repeatedly produced, resulting in a high-performance photodetector. The response wavelength of the photodetector can be fine-tuned as a result of the free choice of semiconductors as there is no requirement of lattice match between graphene and the semiconductors. Under zero voltage bias, the responsivity and specific detectivity of Gr/NaCl (0.5 M)W/N-GaN reach values of 130.7 mA/W and 2.3 × 109 Jones under 350 nm illumination, respectively. Meanwhile, using a polar liquid photodetector can successfully read the photoplethysmography signals to produce accurate oxygen blood saturation and heart rate. Compared with the commercial pulse oximetry sensor, the average errors of oxygen saturation and heart rate in the designed photoplethysmography sensor are ~1.9% and ~2.1%, respectively. This study reveals that water can be used as a high-performance photodetector in informative industries.
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Affiliation(s)
- Shisheng Lin
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
- Hangzhou Gelanfeng Technology Co. Ltd, Hangzhou 310051, P. R. China
- State Key Laboratory of Modern Optical Instrumentation, Zhejiang University, Hangzhou 310027, P. R. China
| | - Chang Liu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Xin Chen
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yi Zhang
- Key Laboratory of Wide Bandgap Semiconductor Materials and Devices, HCSemitek Corporation, Yiwu 322009, P. R. China
| | - Hongtao Lin
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Xutao Yu
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yujiao Bo
- College of Information Science and Electronic Engineering, Zhejiang University, Hangzhou 310027, P. R. China
| | - Yanghua Lu
- Hangzhou Gelanfeng Technology Co. Ltd, Hangzhou 310051, P. R. China
- Smart Materials for Architecture Research Lab, Innovation Center of Yangtze River Delta, Zhejiang University, Jiaxing 314100, P. R. China
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Mathur A, Li A, Maheshwari V. Hydrophobic-Hydrophilic Block Copolymer Mediated Tuning of Halide Perovskite Photosensitive Device Stability and Efficiency. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37196351 DOI: 10.1021/acsami.3c02748] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/19/2023]
Abstract
The polymer additive strategy provides a facile and cost-effective way for passivating defects and trap sites at the grain boundaries and interfaces and acting as a barrier against the external degradation factors in perovskite-based devices. However, limited literature exists discussing the integration of hydrophobic and hydrophilic polymer additives in the form of a copolymer within the perovskite films. The inherent difference in the chemical structure of these polymers and their interaction with perovskite components and the environment leads to critical differences in the respective polymer-perovskite films. The current work utilizes both homopolymer and copolymer strategies to understand the effect of polystyrene (PS) and polyethylene glycol (PEG), two common commodity polymers, over the physicochemical and electro-optical properties of the as-fabricated devices and the distribution of polymer chains across the depth of perovskite films. The hydrophobic PS integrated perovskite devices PS-MAPbI3, 36 PS-b-1.4-PEG-MAPbI3, and 21.5 PS-b-20-PEG-MAPbI3 outperform hydrophilic PEG-MAPbI3 and pristine MAPbI3 devices and exhibit higher photocurrent, lower dark currents, and greater stability. A critical difference is also observed in the stability of devices, where rapid decay of performance is observed in the pristine MAPbI3 films. The deterioration in performance is highly limited for hydrophobic polymer-MAPbI3 films as they maintain 80% of their initial performance.
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Affiliation(s)
- Avi Mathur
- Department of Chemistry, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Alexander Li
- Department of Chemistry, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
| | - Vivek Maheshwari
- Department of Chemistry, Waterloo Institute for Nanotechnology, University of Waterloo, 200 University Avenue West, Waterloo, Ontario N2L 3G1, Canada
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