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Roshan H, Zhu D, Piccinotti D, Dai J, De Franco M, Barelli M, Prato M, De Trizio L, Manna L, Di Stasio F. Near Infrared Light-Emitting Diodes Based on Colloidal InAs/ZnSe Core/Thick-Shell Quantum Dots. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2400734. [PMID: 38622892 PMCID: PMC11187924 DOI: 10.1002/advs.202400734] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 01/20/2024] [Revised: 03/10/2024] [Indexed: 04/17/2024]
Abstract
Heavy-metal-free III-V colloidal quantum dots (QDs) exhibit promising attributes for application in optoelectronics. Among them, InAs QDs are demonstrating excellent optical performance with respect to absorption and emission in the near-infrared spectral domain. Recently, InAs QDs attained a substantial improvement in photoluminescence quantum yield, achieving 70% at a wavelength of 900 nm through the strategic overgrowth of a thick ZnSe shell atop the InAs core. In the present study, light-emitting diodes (LEDs) based on this type of InAs/ZnSe QDs are fabricated, reaching an external quantum efficiency (EQE) of 13.3%, a turn-on voltage of 1.5V, and a maximum radiance of 12 Wsr-1m-2. Importantly, the LEDs exhibit an extensive emission dynamic range, characterized by a nearly linear correlation between emission intensity and current density, which can be attributed to the efficient passivation provided by the thick ZnSe shell. The obtained results are comparable to state-of-the-art PbS QD LEDs. Furthermore, it should be stressed not only that the fabricated LEDs are fully RoHS-compliant but also that the emitting InAs QDs are prepared via a synthetic route based on a non-pyrophoric, cheap, and commercially available as precursor, namely tris(dimethylamino)-arsine.
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Affiliation(s)
- Hossein Roshan
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Dongxu Zhu
- NanochemistryIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Davide Piccinotti
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Jinfei Dai
- NanochemistryIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
- Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic TechniqueSchool of Electronic Science and EngineeringXi'an Jiaotong UniversityXi'an710049China
| | - Manuela De Franco
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
- Dipartimento di Chimica e Chimica IndustrialeUniversità degli Studi di GenovaVia Dodecaneso 31Genova16146Italy
| | - Matteo Barelli
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Mirko Prato
- Materials Characterization FacilityIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Luca De Trizio
- Chemistry FacilityIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Liberato Manna
- NanochemistryIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
| | - Francesco Di Stasio
- Photonic NanomaterialsIstituto Italiano di TecnologiaVia Morego 30Genova16163Italy
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2
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Sandeno S, Krajewski SM, Beck RA, Kaminsky W, Li X, Cossairt BM. Synthesis and Single Crystal X-ray Diffraction Structure of an Indium Arsenide Nanocluster. ACS CENTRAL SCIENCE 2024; 10:744-751. [PMID: 38559306 PMCID: PMC10979481 DOI: 10.1021/acscentsci.3c01451] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/26/2023] [Revised: 02/14/2024] [Accepted: 02/16/2024] [Indexed: 04/04/2024]
Abstract
The discovery of magic-sized clusters as intermediates in the synthesis of colloidal quantum dots has allowed for insight into formation pathways and provided atomically precise molecular platforms for studying the structure and surface chemistry of those materials. The synthesis of monodisperse InAs quantum dots has been developed through the use of indium carboxylate and As(SiMe3)3 as precursors and documented to proceed through the formation of magic-sized intermediates. Herein, we report the synthesis, isolation, and single-crystal X-ray diffraction structure of an InAs nanocluster that is ubiquitous across reports of InAs quantum dot synthesis. The structure, In26As18(O2CR)24(PR'3)3, differs substantially from previously reported semiconductor nanocluster structures even within the III-V family. However, it can be structurally linked to III-V and II-VI cluster structures through the anion sublattice. Further analysis using variable temperature absorbance spectroscopy and support from computation deepen our understanding of the reported structure and InAs nanomaterials as a whole.
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Affiliation(s)
- Soren
F. Sandeno
- Department of Chemistry, University
of Washington, Box 351700, Seattle, Washington 98195-1700, United
States
| | - Sebastian M. Krajewski
- Department of Chemistry, University
of Washington, Box 351700, Seattle, Washington 98195-1700, United
States
| | - Ryan A. Beck
- Department of Chemistry, University
of Washington, Box 351700, Seattle, Washington 98195-1700, United
States
| | - Werner Kaminsky
- Department of Chemistry, University
of Washington, Box 351700, Seattle, Washington 98195-1700, United
States
| | - Xiaosong Li
- Department of Chemistry, University
of Washington, Box 351700, Seattle, Washington 98195-1700, United
States
| | - Brandi M. Cossairt
- Department of Chemistry, University
of Washington, Box 351700, Seattle, Washington 98195-1700, United
States
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3
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Zhang Y, Xia P, Rehl B, Parmar DH, Choi D, Imran M, Chen Y, Liu Y, Vafaie M, Li C, Atan O, Pina JM, Paritmongkol W, Levina L, Voznyy O, Hoogland S, Sargent EH. Dicarboxylic Acid-Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short-Wave Infrared Photodetectors. Angew Chem Int Ed Engl 2024; 63:e202316733. [PMID: 38170453 DOI: 10.1002/anie.202316733] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/03/2023] [Revised: 12/23/2023] [Accepted: 01/03/2024] [Indexed: 01/05/2024]
Abstract
Heavy-metal-free III-V colloidal quantum dots (CQDs) are promising materials for solution-processed short-wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum-size effect tuning of the band gap. However, it has been challenging to achieve uniform InSb CQDs with band gaps below 0.9 eV, as well as to control the surface chemistry of these large-diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to ≥ ${\ge }$ 1400 nm light. Here we adopt solvent engineering to facilitate a diffusion-limited growth regime, leading to uniform CQDs with a band gap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate-halide co-passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25 % at 1400 nm, the highest among III-V CQD photodetectors in this spectral region.
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Affiliation(s)
- Yangning Zhang
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Pan Xia
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Benjamin Rehl
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Darshan H Parmar
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Dongsun Choi
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Muhammad Imran
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Yiqing Chen
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Yanjiang Liu
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Maral Vafaie
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Chongwen Li
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Ozan Atan
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Joao M Pina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Watcharaphol Paritmongkol
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
- Department of Materials Science and Engineering, School of Molecular Science and Engineering, Vidyasirimedhi Institute of Science and Technology, 21210, Rayong, Thailand
| | - Larissa Levina
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Oleksandr Voznyy
- Department of Physical and Environmental Sciences, University of Toronto (Scarborough), 1065 Military Trail, M1C 1A4, Toronto, Ontario, Canada
| | - Sjoerd Hoogland
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
| | - Edward H Sargent
- Department of Electrical and Computer Engineering, University of Toronto, 10 King's College Road, M5S 3G4, Toronto, Ontario, Canada
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Yuan C, He M, Liao X, Liu M, Zhang Q, Wan Q, Qu Z, Kong L, Li L. Interface defects repair of core/shell quantum dots through halide ion penetration. Chem Sci 2023; 14:13119-13125. [PMID: 38023521 PMCID: PMC10664535 DOI: 10.1039/d3sc04136k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 08/08/2023] [Accepted: 10/31/2023] [Indexed: 12/01/2023] Open
Abstract
The interface defects of core-shell colloidal quantum dots (QDs) affect their optoelectronic properties and charge transport characteristics. However, the limited available strategies pose challenges in the comprehensive control of these interface defects. Herein, we introduce a versatile strategy that effectively addresses both surface and interface defects in QDs through simple post-synthesis treatment. Through the combination of fine chemical etching methods and spectroscopic analysis, we have revealed that halogens can diffuse within the crystal structure at elevated temperatures, acting as "repairmen" to rectify oxidation and significantly reducing interface defects within the QDs. Under the guidance of this protocol, InP core/shell QDs were synthesized by a hydrofluoric acid-free method with a full width at half-maximum of 37.0 nm and an absolute quantum yield of 86%. To further underscore the generality of this strategy, we successfully applied it to CdSe core/shell QDs as well. These findings provide fundamental insights into interface defect engineering and contribute to the advancement of innovative solutions for semiconductor nanomaterials.
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Affiliation(s)
- Changwei Yuan
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Mengda He
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Xinrong Liao
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Mingming Liu
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Qinggang Zhang
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Qun Wan
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology Taipa Macao 999078 P. R. China
| | - Zan Qu
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Long Kong
- School of Environmental Science and Engineering, Shanghai Jiao Tong University, Shanghai 200240 P. R. China
| | - Liang Li
- Macao Institute of Materials Science and Engineering (MIMSE), Macau University of Science and Technology Taipa Macao 999078 P. R. China
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Stam M, du Fossé I, Infante I, Houtepen AJ. Guilty as Charged: The Role of Undercoordinated Indium in Electron-Charged Indium Phosphide Quantum Dots. ACS NANO 2023; 17:18576-18583. [PMID: 37712414 PMCID: PMC10540256 DOI: 10.1021/acsnano.3c07029] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/28/2023] [Accepted: 09/12/2023] [Indexed: 09/16/2023]
Abstract
Quantum dots (QDs) are known for their size-dependent optical properties, narrow emission bands, and high photoluminescence quantum yield (PLQY), which make them interesting candidates for optoelectronic applications. In particular, InP QDs are receiving a lot of attention since they are less toxic than other QD materials and are hence suitable for consumer applications. Most of these applications, such as LEDs, photovoltaics, and lasing, involve charging QDs with electrons and/or holes. However, charging of QDs is not easy nor innocent, and the effect of charging on the composition and properties of InP QDs is not yet well understood. This work provides theoretical insight into electron charging of the InP core and InP/ZnSe QDs. Density functional theory calculations are used to show that charging of InP-based QDs with electrons leads to the formation of trap states if the QD contains In atoms that are undercoordinated and thus have less than four bonds to neighboring atoms. InP core-only QDs have such atoms at the surface, which are responsible for the formation of trap states upon charging with electrons. We show that InP/ZnSe core-shell models with all In atoms fully coordinated can be charged with electrons without the formation of trap states. These results show that undercoordinated In atoms should be avoided at all times for QDs to be stably charged with electrons.
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Affiliation(s)
- Maarten Stam
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Indy du Fossé
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
| | - Ivan Infante
- BC
Materials, Basque Center for Materials, Applications, and Nanostructures, UPV/EHU Science Park, Leioa 48940, Spain
- Ikerbasque,
Basque Foundation for Science, Bilbao 48009, Spain
| | - Arjan J. Houtepen
- Optoelectronic
Materials Section, Faculty of Applied Sciences, Delft University of Technology, Van der Maasweg 9, 2629 HZ Delft, The
Netherlands
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