2D Ferroic Materials for Nonvolatile Memory Applications

Bio-Plausible Multimodal Learning with Emerging Neuromorphic Devices

Multimodal machine learning, as a prospective advancement in artificial intelligence, endeavors to emulate the brain's multimodal learning abilities with the objective to enhance interactions with humans. However, this approach requires simultaneous processing of diverse types of data, leading to increased model complexity, longer training times, and higher energy consumption. Multimodal neuromorphic devices have the capability to preprocess spatio-temporal information from various physical signals into unified electrical signals with high information density, thereby enabling more biologically plausible multimodal learning with low complexity and high energy-efficiency. Here, this work conducts a comparison between the expression of multimodal machine learning and multimodal neuromorphic computing, followed by an overview of the key characteristics associated with multimodal neuromorphic devices. The bio-plausible operational principles and the multimodal learning abilities of emerging devices are examined, which are classified into heterogeneous and homogeneous multimodal neuromorphic devices. Subsequently, this work provides a detailed description of the multimodal learning capabilities demonstrated by neuromorphic circuits and their respective applications. Finally, this work highlights the limitations and challenges of multimodal neuromorphic computing in order to hopefully provide insight into potential future research directions.

Performance Limits and Advancements in Single 2D Transition Metal Dichalcogenide Transistor

Two-dimensional (2D) transition metal dichalcogenides (TMDs) allow for atomic-scale manipulation, challenging the conventional limitations of semiconductor materials. This capability may overcome the short-channel effect, sparking significant advancements in electronic devices that utilize 2D TMDs. Exploring the dimension and performance limits of transistors based on 2D TMDs has gained substantial importance. This review provides a comprehensive investigation into these limits of the single 2D-TMD transistor. It delves into the impacts of miniaturization, including the reduction of channel length, gate length, source/drain contact length, and dielectric thickness on transistor operation and performance. In addition, this review provides a detailed analysis of performance parameters such as source/drain contact resistance, subthreshold swing, hysteresis loop, carrier mobility, on/off ratio, and the development of p-type and single logic transistors. This review details the two logical expressions of the single 2D-TMD logic transistor, including current and voltage. It also emphasizes the role of 2D TMD-based transistors as memory devices, focusing on enhancing memory operation speed, endurance, data retention, and extinction ratio, as well as reducing energy consumption in memory devices functioning as artificial synapses. This review demonstrates the two calculating methods for dynamic energy consumption of 2D synaptic devices. This review not only summarizes the current state of the art in this field but also highlights potential future research directions and applications. It underscores the anticipated challenges, opportunities, and potential solutions in navigating the dimension and performance boundaries of 2D transistors.

Intrinsic Out-Of-Plane and In-Plane Ferroelectricity in 2D AgCrS2 with High Curie Temperature

2D ferroelectric materials have attracted extensive research interest due to potential applications in nonvolatile memory, nanoelectronics and optoelectronics. However, the available 2D ferroelectric materials are scarce and most of them are limited by the uncontrollable preparation. Herein, a novel 2D ferroelectric material AgCrS2 is reported that are controllably synthesized in large-scale via salt-assist chemical vapor deposition growth. By tuning the growth temperature from 800 to 900 °C, the thickness of AgCrS2 nanosheets can be precisely modulated from 2.1 to 40 nm. Structural and nonlinear optical characterizations demonstrate that AgCrS2 nanosheet crystallizes in a non-centrosymmetric structure with high crystallinity and remarkable air stability. As a result, AgCrS2 of various thicknesses display robust ferroelectric polarization in both in-plane (IP) and out-of-plane (OOP) directions with strong intercorrelation and high ferroelectric phase transition temperature (682 K). Theoretical calculations suggest that the ferroelectricity in AgCrS2 originates from the displacement of Ag atoms in AgS4 tetrahedrons, which changes the dipole moment alignment. Moreover, ferroelectric switching is demonstrated in both lateral and vertical AgCrS2 devices, which exhibit exotic nonvolatile memory behavior with distinct high and low resistance states. This study expands the scope of 2D ferroelectric materials and facilitates the ferroelectric-based nonvolatile memory applications.

Synthesis of Few-Layer Hexagonal Boron Nitride for Magnetic Tunnel Junction Application

Hexagonal boron nitride (hBN), a wide-gap two-dimensional (2D) insulator, is an ideal tunneling barrier for many applications because of the atomically flat surface, high crystalline quality, and high stability. Few-layer hBN with a thickness of 1-2 nm is an effective barrier for electron tunneling, but the preparation of few-layer hBN relies on mechanical exfoliation from bulk hBN crystals. Here, we report the large-area growth of few-layer hBN by chemical vapor deposition on ferromagnetic Ni-Fe thin films and its application to tunnel barriers of magnetic tunnel junction (MTJ) devices. Few-layer hBN sheets mainly consisting of two to three layers have been successfully synthesized on a Ni-Fe catalyst at a high growth temperature of 1200 °C. The MTJ devices were fabricated on as-grown hBN by using the Ni-Fe film as the bottom ferromagnetic electrode to avoid contamination and surface oxidation. We found that trilayer hBN gives a higher tunneling magnetoresistance (TMR) ratio than bilayer hBN, resulting in a high TMR ratio up to 10% at ∼10 K.

Chemical Vapor Deposition Synthesis of Intrinsic High-Temperature Ferroelectric 2D CuCrSe2

Ultrathin 2D ferroelectrics with high Curie temperature are critical for multifunctional ferroelectric devices. However, the ferroelectric spontaneous polarization is consistently broken by the strong thermal fluctuations at high temperature, resulting in the rare discovery of high-temperature ferroelectricity in 2D materials. Here, a chemical vapor deposition method is reported to synthesize 2D CuCrSe2 nanosheets. The crystal structure is confirmed by scanning transmission electron microscopy characterization. The measured ferroelectric phase transition temperature of ultrathin CuCrSe2 is about ≈800 K. Significantly, the switchable ferroelectric polarization is observed in ≈5.2 nm nanosheet. Moreover, the in-plane and out-of-plane ferroelectric response are modulated by different maximum bias voltage. This work provides a new insight into the construction of 2D ferroelectrics with high Curie temperature.

Extendable piezo/ferroelectricity in nonstoichiometric 2D transition metal dichalcogenides

Engineering piezo/ferroelectricity in two-dimensional materials holds significant implications for advancing the manufacture of state-of-the-art multifunctional materials. The inborn nonstoichiometric propensity of two-dimensional transition metal dichalcogenides provides a spiffy ready-available solution for breaking inversion centrosymmetry, thereby conducing to circumvent size effect challenges in conventional perovskite oxide ferroelectrics. Here, we show the extendable and ubiquitous piezo/ferroelectricity within nonstoichiometric two-dimensional transition metal dichalcogenides that are predominantly centrosymmetric during standard stoichiometric cases. The emerged piezo/ferroelectric traits are aroused from the sliding of van der Waals layers and displacement of interlayer metal atoms triggered by the Frankel defects of heterogeneous interlayer native metal atom intercalation. We demonstrate two-dimensional chromium selenides nanogenerator and iron tellurides ferroelectric multilevel memristors as two representative applications. This innovative approach to engineering piezo/ferroelectricity in ultrathin transition metal dichalcogenides may provide a potential avenue to consolidate piezo/ferroelectricity with featured two-dimensional materials to fabricate multifunctional materials and distinguished multiferroic.

Emerging Robust Polymer Materials for High-Performance Two-Terminal Resistive Switching Memory

Facing the era of information explosion and the advent of artificial intelligence, there is a growing demand for information technologies with huge storage capacity and efficient computer processing. However, traditional silicon-based storage and computing technology will reach their limits and cannot meet the post-Moore information storage requirements of ultrasmall size, ultrahigh density, flexibility, biocompatibility, and recyclability. As a response to these concerns, polymer-based resistive memory materials have emerged as promising candidates for next-generation information storage and neuromorphic computing applications, with the advantages of easy molecular design, volatile and non-volatile storage, flexibility, and facile fabrication. Herein, we first summarize the memory device structures, memory effects, and memory mechanisms of polymers. Then, the recent advances in polymer resistive switching materials, including single-component polymers, polymer mixtures, 2D covalent polymers, and biomacromolecules for resistive memory devices, are highlighted. Finally, the challenges and future prospects of polymer memory materials and devices are discussed. Advances in polymer-based memristors will open new avenues in the design and integration of high-performance switching devices and facilitate their application in future information technology.