1
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Fan ZY, Tang Z, Fang JL, Jiang YP, Liu QX, Tang XG, Zhou YC, Gao J. Neuromorphic Computing of Optoelectronic Artificial BFCO/AZO Heterostructure Memristors Synapses. NANOMATERIALS (BASEL, SWITZERLAND) 2024; 14:583. [PMID: 38607116 PMCID: PMC11013421 DOI: 10.3390/nano14070583] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/28/2024] [Revised: 03/19/2024] [Accepted: 03/25/2024] [Indexed: 04/13/2024]
Abstract
Compared with purely electrical neuromorphic devices, those stimulated by optical signals have gained increasing attention due to their realistic sensory simulation. In this work, an optoelectronic neuromorphic device based on a photoelectric memristor with a Bi2FeCrO6/Al-doped ZnO (BFCO/AZO) heterostructure is fabricated that can respond to both electrical and optical signals and successfully simulate a variety of synaptic behaviors, such as STP, LTP, and PPF. In addition, the photomemory mechanism was identified by analyzing the energy band structures of AZO and BFCO. A convolutional neural network (CNN) architecture for pattern classification at the Mixed National Institute of Standards and Technology (MNIST) was used and improved the recognition accuracy of the MNIST and Fashion-MNIST datasets to 95.21% and 74.19%, respectively, by implementing an improved stochastic adaptive algorithm. These results provide a feasible approach for future implementation of optoelectronic synapses.
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Affiliation(s)
- Zhao-Yuan Fan
- School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; (Z.-Y.F.)
| | - Zhenhua Tang
- School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; (Z.-Y.F.)
| | - Jun-Lin Fang
- School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; (Z.-Y.F.)
| | - Yan-Ping Jiang
- School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; (Z.-Y.F.)
| | - Qiu-Xiang Liu
- School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; (Z.-Y.F.)
| | - Xin-Gui Tang
- School of Physics and Optoelectric Engineering, Guangdong University of Technology, Guangzhou Higher Education Mega Center, Guangzhou 510006, China; (Z.-Y.F.)
| | - Yi-Chun Zhou
- School of Advanced Materials and Nanotechnology, Xidian University, Xi’an 710126, China
| | - Ju Gao
- Department of Physics, The University of Hong Kong, Hong Kong 999077, China
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2
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Awasthi C, Khan A, Islam SS. PdSe 2/MoSe 2: a promising van der Waals heterostructure for field effect transistor application. NANOTECHNOLOGY 2024; 35:195202. [PMID: 38295411 DOI: 10.1088/1361-6528/ad2482] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2023] [Accepted: 01/31/2024] [Indexed: 02/02/2024]
Abstract
The field-effect transistor (FET) is a fundamental component of semiconductors and the electronic industry. High on-current and mobility with layer-dependent features are required for outstanding FET channel material. Two-dimensional materials are advantageous over bulk materials owing to their higher mobility, high ON/OFF ratio, low tunneling current, and leakage problems. Moreover, two-dimensional heterostructures provide a better way to tune electrical properties. In this work, the two distinct possibilities of PdSe2/MoSe2heterostructure have been employed through mechanical exfoliation and analyzed their electrical response. These diffe approaches to heterostructure formation serve as crucial components of our investigation, allowing us to explore and evaluate the unique electronic properties arising from each design. This work demonstrates that the heterostructure possesses a better ON/OFF ratio of ∼5.78 × 105, essential in switching characteristics. Moreover, MoSe2provides a defect-free interface to PdSe2, resulting in a higher ON current of ∼10μA and mobility of ∼63.7 cm2V-1s-1, necessary for transistor applications. In addition, comprehending the process of charge transfer occurring at the interface between transition metal dichalcogenides is fundamental for advancing next-generation technologies. This work provides insights into the interface formed between the PdSe2and MoSe2that can be harnessed in transistor applications.
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Affiliation(s)
- Chetan Awasthi
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025, India
| | - Afzal Khan
- State Key Laboratory of Silicon Materials and School of Materials Science and Engineering, Zhejiang University, Hangzhou-310027, People's Republic of China
- Institute of Micro-/Nanotechnology and Precision Engineering, School of Mechanical Engineering, Zhejiang University, Hangzhou-310058, People's Republic of China
| | - S S Islam
- Centre for Nanoscience and Nanotechnology, Jamia Millia Islamia, New Delhi 110025, India
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3
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Kim S, Lee S, Oh S, Lee KB, Lee JJ, Kim B, Heo K, Park JH. Broadband Van-der-Waals Photodetector Driven by Ferroelectric Polarization. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305045. [PMID: 37675813 DOI: 10.1002/smll.202305045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 08/15/2023] [Indexed: 09/08/2023]
Abstract
The potential for various future industrial applications has made broadband photodetectors beyond visible light an area of great interest. Although most 2D van-der-Waals (vdW) semiconductors have a relatively large energy bandgap (>1.2 eV), which limits their use in short-wave infrared detection, they have recently been considered as a replacement for ternary alloys in high-performance photodetectors due to their strong light-matter interaction. In this study, a ferroelectric gating ReS2 /WSe2 vdW heterojunction-channel photodetector is presented that successfully achieves broadband light detection (>1300 nm, expandable up to 2700 nm). The staggered type-II bandgap alignment creates an interlayer gap of 0.46 eV between the valence band maximum (VBMAX ) of WSe2 and the conduction band minimum (CBMIN ) of ReS2 . Especially, the control of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric dipole polarity for a specific wavelength allows a high photoresponsivity of up to 6.9 × 103 A W-1 and a low dark current below 0.26 nA under the laser illumination with a wavelength of 405 nm in P-up mode. The achieved high photoresponsivity, low dark current, and full-range near infrared (NIR) detection capability open the door for next-generation photodetectors beyond traditional ternary alloy photodetectors.
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Affiliation(s)
- Sungjun Kim
- Foundry Division, Samsung Electronics Co. Ltd., Yongin, 17113, South Korea
- Samsung Institute of Technology, Yongin, 17113, South Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Sunghun Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Seyong Oh
- Division of Electrical Engineering, Hanyang University ERICA, Ansan, 15588, South Korea
| | - Kyeong-Bae Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Je-Jun Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Byeongchan Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Keun Heo
- School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, Jeollabuk-do, 54896, South Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
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4
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Elbanna A, Jiang H, Fu Q, Zhu JF, Liu Y, Zhao M, Liu D, Lai S, Chua XW, Pan J, Shen ZX, Wu L, Liu Z, Qiu CW, Teng J. 2D Material Infrared Photonics and Plasmonics. ACS NANO 2023; 17:4134-4179. [PMID: 36821785 DOI: 10.1021/acsnano.2c10705] [Citation(s) in RCA: 13] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/18/2023]
Abstract
Two-dimensional (2D) materials including graphene, transition metal dichalcogenides, black phosphorus, MXenes, and semimetals have attracted extensive and widespread interest over the past years for their many intriguing properties and phenomena, underlying physics, and great potential for applications. The vast library of 2D materials and their heterostructures provides a diverse range of electrical, photonic, mechanical, and chemical properties with boundless opportunities for photonics and plasmonic devices. The infrared (IR) regime, with wavelengths across 0.78 μm to 1000 μm, has particular technological significance in industrial, military, commercial, and medical settings while facing challenges especially in the limit of materials. Here, we present a comprehensive review of the varied approaches taken to leverage the properties of the 2D materials for IR applications in photodetection and sensing, light emission and modulation, surface plasmon and phonon polaritons, non-linear optics, and Smith-Purcell radiation, among others. The strategies examined include the growth and processing of 2D materials, the use of various 2D materials like semiconductors, semimetals, Weyl-semimetals and 2D heterostructures or mixed-dimensional hybrid structures, and the engineering of light-matter interactions through nanophotonics, metasurfaces, and 2D polaritons. Finally, we give an outlook on the challenges in realizing high-performance and ambient-stable devices and the prospects for future research and large-scale commercial applications.
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Affiliation(s)
- Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
| | - Hao Jiang
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Qundong Fu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Juan-Feng Zhu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
| | - Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Meng Zhao
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Dongjue Liu
- School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
| | - Samuel Lai
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Xian Wei Chua
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
| | - Ze Xiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore 637371, Singapore
- Interdisciplinary Graduate Program, Energy Research Institute@NTU, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798 Singapore
| | - Lin Wu
- Science, Mathematics and Technology (SMT), Singapore University of Technology and Design, 8 Somapah Road, Singapore 487372, Singapore
- Institute of High Performance Computing, Agency for Science Technology and Research (A*STAR), 1 Fusionopolis Way, Singapore 138632, Singapore
| | - Zheng Liu
- School of Materials Science and Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798, Singapore
- CINTRA CNRS/NTU/THALES, UMI 3288, Research Techno Plaza, Singapore 637553, Singapore
| | - Cheng-Wei Qiu
- Department of Electrical and Electronic Engineering, National University of Singapore, Singapore 117583, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore 138634, Singapore
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5
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Liao CS, Liu B, Yang JL, Cai MQ. Multi-functional application potential of Ruddlesden-Popper perovskite-based heterostructure PtSe 2/Cs 2PbI 4with tunable electronic properties. JOURNAL OF PHYSICS. CONDENSED MATTER : AN INSTITUTE OF PHYSICS JOURNAL 2023; 35:115002. [PMID: 36603226 DOI: 10.1088/1361-648x/acb0a6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/28/2022] [Accepted: 01/05/2023] [Indexed: 06/17/2023]
Abstract
Heterogeneous stacking based on two-dimensional Ruddlesden-Popper (RP) perovskite is a desired strategy for the reasonable combination of stability and efficiency. Constructing heterostructures with tunable optoelectronic properties further provide opportunities to design multi-functional devices. Herein, we present a first-principle research to investigate the geometric and electronic structures of RP perovskite heterostructure PtSe2/Cs2PbI4and its tunable electronic properties induced by thickness modulation and external strains. The results indicate that the heterostructure based on Cs2PbI4monolayer and PtSe2monolayer has a type-II band alignment, which is suitable for the photovoltaic applications. With the layer number of PtSe2in heterostructure increases from monolayer to bilayer, the band alignment of PtSe2/Cs2PbI4heterostructure can switch from type-II to type-I, which is beneficial for the luminescence device applications. However, when the thickness of PtSe2in heterostructure further increases to trilayer, the heterostructure exhibits metallic characteristic with a p-type Schottky barrier. In addition, we find the strain engineering is an effective knob in tuning the electronic properties of PtSe2/Cs2PbI4heterostructures with different thickness. These findings reveal the potential of PtSe2/Cs2PbI4heterostructure as a tunable hybrid material with substantial prospect in multi-functional applications.
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Affiliation(s)
- Cheng-Sheng Liao
- Hunan Provincial Key Laboratory of High-Energy Scale Physics and Applications, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Biao Liu
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China
| | - Jun-Liang Yang
- Hunan Key Laboratory for Super-Microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, People's Republic of China
| | - Meng-Qiu Cai
- Hunan Provincial Key Laboratory of High-Energy Scale Physics and Applications, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
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6
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Sheykhifar Z, Mohseni SM. Highly light-tunable memristors in solution-processed 2D materials/metal composites. Sci Rep 2022; 12:18771. [DOI: 10.1038/s41598-022-23404-5] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/29/2022] [Accepted: 10/31/2022] [Indexed: 11/06/2022] Open
Abstract
AbstractMemristors—competitive microelectronic elements which bring together the electronic sensing and memory effects—potentially are able to respond against physical and chemical effects that influence their sensing capability and memory behavior. However, this young topic is still under debate and needs further attention to be highly responding to or remaining intact against physical effects, e.g., light illumination. To contribute to this scenario, using a composite of two-dimensional graphene or MoS2 doped with meso-structures of metal/metal-oxides of Ag, Cu and Fe family, we presented scalable and printable memristors. The memristive behavior shows strong dependency upon light illumination with a high record of 105 ON/OFF ratio observed so far in 2-terminal systems based on two-dimensional materials or metal oxide structures. Moreover, we found that the memristors can remain stable without illumination, providing a novel approach to use these composites for developing neuromorphic computing circuits. The sensing and memristive mechanisms are explained based on the electronic properties of the materials. Our introduced materials used in the memristor devices can open new routes to achieve high sensing capability and improve memristance of the future microelectronic elements.
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7
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Zhao Y, Cho J, Choi M, Ó Coileáin C, Arora S, Hung KM, Chang CR, Abid M, Wu HC. Light-Tunable Polarity and Erasable Physisorption-Induced Memory Effect in Vertically Stacked InSe/SnS 2 Self-Powered Photodetector. ACS NANO 2022; 16:17347-17355. [PMID: 36153977 DOI: 10.1021/acsnano.2c08177] [Citation(s) in RCA: 6] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
van der Waals heterojunctions with tunable polarity are being actively explored for more Moore and more-than-Moore device applications, as they can greatly simplify circuit design. However, inadequate control over the multifunctional operational states is still a challenge in their development. Here, we show that a vertically stacked InSe/SnS2 van der Waals heterojunction exhibits type-II band alignment, and its polarity can be tuned by an external electric field and by the wavelength and intensity of an illuminated light source. Moreover, such SnS2/InSe diodes are self-powered broadband photodetectors with good performance. The self-powered performance can be further enhanced significantly with gas adsorption, and the device can be quickly restored to the state before gas injection using a gate voltage pulse. Our results suggest a way to achieve and design multiple functions in a single device with multifield coupling of light, electrical field, gas, or other external stimulants.
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Affiliation(s)
- Yue Zhao
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Jiung Cho
- Western Seoul Center, Korea Basic Science Institute, Seoul 03579, Republic of Korea
| | - Miri Choi
- Chuncheon Center, Korea Basic Science Institute, Chuncheon 24341, Republic of Korea
| | - Cormac Ó Coileáin
- Institute of Physics, EIT 2, Faculty of Electrical Engineering and Information Technology, University of the Bundeswehr Munich, Neubiberg 85577, Germany
| | - Sunil Arora
- Centre for Nanoscience and Nanotechnology, Panjab University, Chandigarh 160014, India
| | - Kuan-Ming Hung
- Department of Electronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung 807, Taiwan, ROC
| | - Ching-Ray Chang
- Quantum information center, Chung Yuan Christian University, Taoyuan 32023, Taiwan, ROC
- Department of Physics, National Taiwan University, Taipei 106, Taiwan, ROC
| | - Mohamed Abid
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
| | - Han-Chun Wu
- School of Physics, Beijing Institute of Technology, Beijing 100081, P.R. China
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8
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Liu Y, Elbanna A, Gao W, Pan J, Shen Z, Teng J. Interlayer Excitons in Transition Metal Dichalcogenide Semiconductors for 2D Optoelectronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107138. [PMID: 34700359 DOI: 10.1002/adma.202107138] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/08/2021] [Revised: 10/13/2021] [Indexed: 06/13/2023]
Abstract
Optoelectronic materials that allow on-chip integrated light signal emitting, routing, modulation, and detection are crucial for the development of high-speed and high-throughput optical communication and computing technologies. Interlayer excitons in 2D van der Waals heterostructures, where electrons and holes are bounded by Coulomb interaction but spatially localized in different 2D layers, have recently attracted intense attention for their enticing properties and huge potential in device applications. Here, a general view of these 2D-confined hydrogen-like bosonic particles and the state-of-the-art developments with respect to the frontier concepts and prototypes is presented. Staggered type-II band alignment enables expansion of the interlayer direct bandgap from the intrinsic visible in monolayers up to the near- or even mid-infrared spectrum. Owing to large exciton binding energy, together with ultralong lifetime, room-temperature exciton devices and observation of quantum behaviors are demonstrated. With the rapid advances, it can be anticipated that future studies of interlayer excitons will not only allow the construction of all-exciton information processing circuits but will also continue to enrich the panoply of ideas on quantum phenomena.
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Affiliation(s)
- Yuanda Liu
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Ahmed Elbanna
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
| | - Weibo Gao
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jisheng Pan
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
| | - Zexiang Shen
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 637371, Singapore
- The Photonics Institute and Center for Disruptive Photonic Technologies, Nanyang Technological University, 50 Nanyang Avenue, Singapore, 639798, Singapore
| | - Jinghua Teng
- Institute of Materials Research and Engineering, Agency for Science, Technology and Research (A*STAR), 2 Fusionopolis Way, Singapore, 138634, Singapore
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9
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Ghosh S, Varghese A, Jawa H, Yin Y, Medhekar NV, Lodha S. Polarity-Tunable Photocurrent through Band Alignment Engineering in a High-Speed WSe 2/SnSe 2 Diode with Large Negative Responsivity. ACS NANO 2022; 16:4578-4587. [PMID: 35188740 DOI: 10.1021/acsnano.1c11110] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
Excellent light-matter interaction and a wide range of thickness-tunable bandgaps in layered vdW materials coupled by the facile fabrication of heterostructures have enabled several avenues for optoelectronic applications. Realization of high photoresponsivity at fast switching speeds is a critical challenge for 2D optoelectronics to enable high-performance photodetection for optical communication. Moving away from conventional type-II heterostructure pn junctions towards a WSe2/SnSe2 type-III configuration, we leverage the steep change in tunneling current along with a light-induced heterointerface band shift to achieve high negative photoresponsivity, while the fast carrier transport under tunneling results in high speed. In addition, the photocurrent can be controllably switched from positive to negative values, with ∼104× enhancement in responsivity, by engineering the band alignment from type-II to type-III using either the drain or the gate bias. This is further reinforced by electric-field dependent interlayer band structure calculations using density functional theory. The high negative responsivity of 2 × 104 A/W and fast response time of ∼1 μs coupled with a polarity-tunable photocurrent can lead to the development of next-generation multifunctional optoelectronic devices.
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Affiliation(s)
- Sayantan Ghosh
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Abin Varghese
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India
| | - Himani Jawa
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
| | - Yuefeng Yin
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Saurabh Lodha
- Department of Electrical Engineering, IIT Bombay, Mumbai 400076, India
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10
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Pham PV, Bodepudi SC, Shehzad K, Liu Y, Xu Y, Yu B, Duan X. 2D Heterostructures for Ubiquitous Electronics and Optoelectronics: Principles, Opportunities, and Challenges. Chem Rev 2022; 122:6514-6613. [PMID: 35133801 DOI: 10.1021/acs.chemrev.1c00735] [Citation(s) in RCA: 88] [Impact Index Per Article: 44.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 02/07/2023]
Abstract
A grand family of two-dimensional (2D) materials and their heterostructures have been discovered through the extensive experimental and theoretical efforts of chemists, material scientists, physicists, and technologists. These pioneering works contribute to realizing the fundamental platforms to explore and analyze new physical/chemical properties and technological phenomena at the micro-nano-pico scales. Engineering 2D van der Waals (vdW) materials and their heterostructures via chemical and physical methods with a suitable choice of stacking order, thickness, and interlayer interactions enable exotic carrier dynamics, showing potential in high-frequency electronics, broadband optoelectronics, low-power neuromorphic computing, and ubiquitous electronics. This comprehensive review addresses recent advances in terms of representative 2D materials, the general fabrication methods, and characterization techniques and the vital role of the physical parameters affecting the quality of 2D heterostructures. The main emphasis is on 2D heterostructures and 3D-bulk (3D) hybrid systems exhibiting intrinsic quantum mechanical responses in the optical, valley, and topological states. Finally, we discuss the universality of 2D heterostructures with representative applications and trends for future electronics and optoelectronics (FEO) under the challenges and opportunities from physical, nanotechnological, and material synthesis perspectives.
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Affiliation(s)
- Phuong V Pham
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Srikrishna Chanakya Bodepudi
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Khurram Shehzad
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Yuan Liu
- School of Physics and Electronics, Hunan University, Hunan 410082, China
| | - Yang Xu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Bin Yu
- School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center (HIC), Zhejiang University, Xiaoshan 311200, China.,State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, China.,ZJU-UIUC Joint Institute, Zhejiang University, Jiaxing 314400, China
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry, University of California, Los Angeles (UCLA), Los Angeles, California 90095-1569, United States
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11
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Afzal AM, Iqbal MZ, Iqbal MW, Alomayri T, Dastgeer G, Javed Y, Shad NA, Khan R, Sajid MM, Neffati R, Abbas T, Khan QU. High performance and gate-controlled GeSe/HfS2 negative differential resistance device. RSC Adv 2022; 12:1278-1286. [PMID: 35425203 PMCID: PMC8979185 DOI: 10.1039/d1ra07276e] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 09/29/2021] [Accepted: 12/06/2021] [Indexed: 01/13/2023] Open
Abstract
A novel and astonishing p-GeSe/n-HfS2 NDR device shows a high value for the peak-to-valley current ratio in the range of 5.8.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Physics, Riphah International University, 13 Raiwind Road, Lahore, Pakistan
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
| | - Muhammad Waqas Iqbal
- Department of Physics, Riphah International University, 13 Raiwind Road, Lahore, Pakistan
| | - Thamer Alomayri
- Department of Physics, Faculty of Applied Science, Umm-Al-Qura University, 21955, Makkah, Saudi Arabia
| | - Ghulam Dastgeer
- Department of Physics & Astronomy, Graphene Research Institute–Texas Photonics Center International Research Center (GRI–TPC IRC), Sejong University, Seoul 05006, Korea
| | - Yasir Javed
- Department of Physics, University of Agriculture, Faisalabad, 38000, Pakistan
| | | | - Rajwali Khan
- Department of Physics, University of Lakki Marwat, Lakki Marwat, KPK, Pakistan
| | - M. Munir Sajid
- Department of Physics, GC University, Faisalabad, 38000, Pakistan
| | - R. Neffati
- Department of Physics, Faculty of Science, King Khalid University, P.O. Box 9004, Abha, Saudi Arabia
- Laboratoire de Physique de la Matière Condensée, Département de Physique, Faculté des Sciences de Tunis, Université Tunis El Manar, Campus Universitaire, 1060 Tunis, Tunisia
| | - Tasawar Abbas
- Department of Physics, Riphah International University, 13 Raiwind Road, Lahore, Pakistan
| | - Qudrat Ullah Khan
- Greater Bay Area Institute of Precision Medicine (Guangzhou), Fudan University, Nansha District, Guangzhou, Guangdong 511458, P. R. China
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12
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Tai X, Chen Y, Wu S, Jiao H, Cui Z, Zhao D, Huang X, Zhao Q, Wang X, Lin T, Shen H, Meng X, Wang J, Chu J. High-performance ReS2 photodetectors enhanced by a ferroelectric field and strain field. RSC Adv 2022; 12:4939-4945. [PMID: 35425495 PMCID: PMC8982459 DOI: 10.1039/d1ra08718e] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/29/2021] [Accepted: 01/16/2022] [Indexed: 11/21/2022] Open
Abstract
Flexible optoelectronic devices have numerous applications in personal wearable devices, bionic detectors, and other systems. There is an urgent need for functional materials with appealing electrical and optoelectronic properties, stretchable electrodes with outstanding mechanical flexibility, and gate medium with flexibility and low power consumption. Two-dimensional transition metal dichalcogenides (TMDCs), a novel kind of widely studied optoelectrical material, have good flexibility for their ultrathin nature. P(VDF-TrFE) is a kind of organic material with good flexibility which has been proved to be a well-performing ferroelectric gate material for photodetectors. Herein, we directly fabricated a well-performing photodetector based on ReS2 and P(VDF-TrFE) on a flexible substrate. The device achieved a high responsivity of 11.3 A W−1 and a high detectivity of 1.7 × 1010 Jones from visible to near-infrared. Moreover, with strain modulation, the device's responsivity improved 2.6 times, while the detectivity improved 1.8 times. This research provides a prospect of flexible photodetectors in the near-infrared wavelength. The flexible ReS2/P(VDF-TrFE) hybrid photodetector could be enhanced by a ferroelectric field and strain field.![]()
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Affiliation(s)
- Xiaochi Tai
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
| | - Yan Chen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Shuaiqin Wu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Hanxue Jiao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Zhuangzhuang Cui
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Dongyang Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- Department of Materials, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China
| | - Xinning Huang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Qianru Zhao
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Xudong Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Tie Lin
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Hong Shen
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Xiangjian Meng
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Jianlu Wang
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
| | - Junhao Chu
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, 500 Yu Tian Road, Shanghai 200083, China
- School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China
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13
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Ahn J, Ko K, Kyhm JH, Ra HS, Bae H, Hong S, Kim DY, Jang J, Kim TW, Choi S, Kang JH, Kwon N, Park S, Ju BK, Poon TC, Park MC, Im S, Hwang DK. Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe 2/ReSe 2 van der Waals Heterostructure. ACS NANO 2021; 15:17917-17925. [PMID: 34677045 DOI: 10.1021/acsnano.1c06234] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
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Affiliation(s)
- Jongtae Ahn
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Kyul Ko
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ji-Hoon Kyhm
- Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyun-Soo Ra
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Heesun Bae
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Sungjae Hong
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Dae-Yeon Kim
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Jisu Jang
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Tae Wook Kim
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Sungwon Choi
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Ji-Hoon Kang
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Namhee Kwon
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Soohyung Park
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ting-Chung Poon
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States
| | - Min-Chul Park
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Do Kyung Hwang
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
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14
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Afzal AM, Iqbal MZ, Dastgeer G, Nazir G, Eom J. Ultrafast and Highly Stable Photodetectors Based on p-GeSe/n-ReSe 2 Heterostructures. ACS APPLIED MATERIALS & INTERFACES 2021; 13:47882-47894. [PMID: 34605233 DOI: 10.1021/acsami.1c12035] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Two-dimensional transition-metal dichalcogenide (2D-TMD) semiconductors and their van der Waals heterostructures (vdWHs) have attracted great attention because of their tailorable band-engineering properties and provide a propitious platform for next-generation extraordinary performance energy-harvesting devices. Herein, we reported unique and unreported germanium selenide/rhenium diselenide (p-GeSe/n-ReSe2) 2D-TMD vdWH photodetectors for extremely sensitive and high-performance photodetection in the broadband spectral range (visible and near-infrared range). A high and gate-tunable rectification ratio (RR) of 7.34 × 105 is achieved, stemming from the low Schottky barrier contacts and sharp interfaces of the p-GeSe/n-ReSe2 2D-TMD vdWHs. In addition, a noticeably high responsivity (R = 2.89 × 105 A/W) and specific detectivity (D* = 4.91 × 1013 Jones), with good external quantum efficiency (EQE = 6.1 × 105) are obtained because of intralayer and interlayer transition of excitations, enabling the broadband photoresponse (λ = 532-1550 nm) at room temperature. Furthermore, fast response times of 16-20 μs are estimated under the irradiated laser of λ = 1550 nm because of interlayer exciton transition. Such a TMD-based compact system offers an opportunity for the realization of high-performance broadband infrared photodetectors.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Physics, Riphah International University, 13-km Raiwind Road, Lahore 54000, Pakistan
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
| | - Ghulam Dastgeer
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
| | - Ghazanfar Nazir
- Department of Chemistry, Inha University, 100 Inharo, Incheon 22212, Korea
| | - Jonghwa Eom
- Department of Physics & Astronomy and Graphene Research Institute-Texas Photonics Center International Research Center (GRI-TPC IRC), Sejong University, Seoul 05006, Korea
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15
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Li YC, Li XX, Zeng G, Chen YC, Chen DB, Peng BF, Zhu LY, Zhang DW, Lu HL. High optoelectronic performance of a local-back-gate ReS 2/ReSe 2 heterojunction phototransistor with hafnium oxide dielectric. NANOSCALE 2021; 13:14435-14441. [PMID: 34473171 DOI: 10.1039/d1nr02728j] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
A high optoelectronic performance ReS2/ReSe2 van der Waals (vdW) heterojunction phototransistor utilizing thin hafnium oxide (HfO2) as a local-back-gate dielectric layer was prepared and studied. The heterojunction-based phototransistor exhibits a superior electrical performance with a large rectification ratio of ∼103. Furthermore, unlike diode-like heterojunction devices, the innovative introduction of a local-back-gate in this phototransistor provides an outstanding gate-tunable capability with an ultra-low off-state current of 433 fA and a high on/off current ratio of over 106. And under optical excitation of a wide spectrum from 400 to 633 nm, an excellent photodetection responsivity at the 104 A W-1 level and the maximum normalized detectivity of 1.8 × 1015 Jones @ 633 nm have been demonstrated. Such high performances are attributed to the band alignment of the type-II heterojunction and the suppression of dark current by the local-back-gate. This work provides a promising reference for two-dimensional (2D) Re-based heterojunction optoelectronic devices.
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Affiliation(s)
- Yu-Chun Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Xiao-Xi Li
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Guang Zeng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Yu-Chang Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Ding-Bo Chen
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Bo-Fang Peng
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Li-Yuan Zhu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - David Wei Zhang
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
| | - Hong-Liang Lu
- State Key Laboratory of ASIC and System, Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, Fudan University, Shanghai 200433, China.
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16
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Efficient ReSe 2 Photodetectors with CVD Single-Crystal Graphene Contacts. NANOMATERIALS 2021; 11:nano11071650. [PMID: 34201696 PMCID: PMC8303534 DOI: 10.3390/nano11071650] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Revised: 06/07/2021] [Accepted: 06/18/2021] [Indexed: 01/16/2023]
Abstract
Rhenium-based 2D transition metal dichalcogenides such as ReSe2 are suitable candidates as photoactive materials for optoelectronic devices. Here, photodetectors based on mechanically exfoliated ReSe2 crystals were fabricated using chemical vapor deposited (CVD) graphene single-crystal (GSC) as lateral contacts. A “pick & place” method was adopted to transfer the desired crystals to the intended position, easing the device fabrication while reducing potential contaminations. A similar device with Au was fabricated to compare contacts’ performance. Lastly, a CVD hexagonal boron nitride (hBN) substrate passivation layer was designed and introduced in the device architecture. Raman spectroscopy was carried out to evaluate the device materials’ structural and electronic properties. Kelvin probe force measurements were done to calculate the materials’ work function, measuring a minimal Schottky barrier height for the GSC/ReSe2 contact (0.06 eV). Regarding the electrical performance, I-V curves showed sizable currents in the GSC/ReSe2 devices in the dark and under illumination. The devices presented high photocurrent and responsivity, along with an external quantum efficiency greatly exceeding 100%, confirming the non-blocking nature of the GSC contacts at high bias voltage (above 2 V). When introducing the hBN passivation layer, the device under white light reached a photo-to-dark current ratio up to 106.
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17
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Afzal AM, Iqbal MZ, Dastgeer G, Ahmad AU, Park B. Highly Sensitive, Ultrafast, and Broadband Photo-Detecting Field-Effect Transistor with Transition-Metal Dichalcogenide van der Waals Heterostructures of MoTe 2 and PdSe 2. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2003713. [PMID: 34105276 PMCID: PMC8188193 DOI: 10.1002/advs.202003713] [Citation(s) in RCA: 17] [Impact Index Per Article: 5.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/01/2020] [Revised: 02/10/2021] [Indexed: 05/11/2023]
Abstract
Recently, van der Waals heterostructures (vdWHs) based on transition-metal dichalcogenides (TMDs) have attracted significant attention owing to their superior capabilities and multiple functionalities. Herein, a novel vdWH field-effect transistor (FET) composed of molybdenum ditelluride (MoTe2 ) and palladium diselenide (PdSe2 ) is studied for highly sensitive photodetection performance in the broad visible and near-infrared (VNIR) region. A high rectification ratio of 6.3 × 105 is obtained, stemming from the sharp interface and low Schottky barriers of the MoTe2 /PdSe2 vdWHs. It is also successfully demonstrated that the vdWH FET exhibits highly sensitive photo-detecting abilities, such as noticeably high photoresponsivity (1.24 × 105 A W-1 ), specific detectivity (2.42 × 1014 Jones), and good external quantum efficiency (3.5 × 106 ), not only due to the intra-TMD band-to-band transition but also due to the inter-TMD charge transfer (CT) transition. Further, rapid rise (16.1 µs) and decay (31.1 µs) times are obtained under incident light with a wavelength of 2000 nm due to the CT transition, representing an outcome one order of magnitude faster than values currently in the literature. Such TMD-based vdWH FETs would improve the photo-gating characteristics and provide a platform for the realization of a highly sensitive photodetector in the broad VNIR region.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering SciencesGIK Institute of Engineering Sciences and TechnologyTopiKhyber Pakhtunkhwa23640Pakistan
| | - Ghulam Dastgeer
- School of PhysicsPeking UniversityBeijing100871China
- IBS Center for Integrated Nanostructure PhysicsSungkyunkwan UniversitySuwon16419South Korea
| | - Aqrab ul Ahmad
- School of Physics and School of MicroelectronicsDalian University of TechnologyDalian116000China
| | - Byoungchoo Park
- Department of Electrical and Biological PhysicsKwangwoon UniversityWolgye‐DongSeoul01897South Korea
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18
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Li X, Chen C, Yang Y, Lei Z, Xu H. 2D Re-Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002320. [PMID: 33304762 PMCID: PMC7709994 DOI: 10.1002/advs.202002320] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2020] [Revised: 08/22/2020] [Indexed: 05/16/2023]
Abstract
The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX2 (X = S, Se) has attracted significant interest regarding its unusual 1T' structure and extraordinary properties in various fields during the past 7 years. For instance, ReX2 possesses large bandgaps (ReSe2: 1.3 eV, ReS2: 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T' structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.
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Affiliation(s)
- Xiaobo Li
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Chao Chen
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Yang Yang
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Zhibin Lei
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
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19
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Das P, Nash J, Webb M, Burns R, Mapara VN, Ghimire G, Rosenmann D, Divan R, Karaiskaj D, McGill SA, Sumant AV, Dai Q, Ray PC, Tawade B, Raghavan D, Karim A, Pradhan NR. High broadband photoconductivity of few-layered MoS 2 field-effect transistors measured using multi-terminal methods: effects of contact resistance. NANOSCALE 2020; 12:22904-22916. [PMID: 33185228 DOI: 10.1039/d0nr07311c] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/13/2023]
Abstract
Among the layered two dimensional semiconductors, molybdenum disulfide (MoS2) is considered to be an excellent candidate for applications in optoelectronics and integrated circuits due to its layer-dependent tunable bandgap in the visible region, high ON/OFF current ratio in field-effect transistors (FET) and strong light-matter interaction properties. In this study, using multi-terminal measurements, we report high broadband photocurrent response (R) and external quantum efficiency (EQE) of few-atomic layered MoS2 phototransistors fabricated on a SiO2 dielectric substrate and encapsulated with a thin transparent polymer film of Cytop. The photocurrent response was measured using a white light source as well as a monochromatic light of wavelength λ = 400 nm-900 nm. We measured responsivity using a 2-terminal configuration as high as R = 1 × 103 A W-1 under white light illumination with an optical power Popt = 0.02 nW. The R value increased to 3.5 × 103 A W-1 when measured using a 4-terminal configuration. Using monochromatic light on the same device, the measured values of R were 103 and 6 × 103 A W-1 under illumination of λ = 400 nm when measured using 2- and 4-terminal methods, respectively. The highest EQE values obtained using λ = 400 nm were 105% and 106% measured using 2- and 4-terminal configurations, respectively. The wavelength dependent responsivity decreased from 400 nm to the near-IR region at 900 nm. The observed photoresponse, photocurrent-dark current ratio (PDCR), detectivity as a function of applied gate voltage, optical power, contact resistances and wavelength were measured and are discussed in detail. The observed responsivity is also thoroughly studied as a function of contact resistance of the device.
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Affiliation(s)
- Priyanka Das
- Layered Materials and Device Physics Laboratory, Department of Chemistry, Physics and Atmospheric Science, Jackson State University, Jackson, MS 39217, USA.
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20
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Li L, Zheng W, Ma C, Zhao H, Jiang F, Ouyang Y, Zheng B, Fu X, Fan P, Zheng M, Li Y, Xiao Y, Cao W, Jiang Y, Zhu X, Zhuang X, Pan A. Wavelength-Tunable Interlayer Exciton Emission at the Near-Infrared Region in van der Waals Semiconductor Heterostructures. NANO LETTERS 2020; 20:3361-3368. [PMID: 32233493 DOI: 10.1021/acs.nanolett.0c00258] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
The wavelength-tunable interlayer exciton (IE) from layered semiconductor materials has not been achieved. van der Waals heterobilayers constructed using single-layer transition metal dichalcogenides can produce continuously changed interlayer band gaps, which is a feasible approach to achieve tunable IEs. In this work, we design a series of van der Waals heterostructures composed of a WSe2 layer with a fixed band gap and another WS2(1-x)Se2x alloy layer with continuously changed band gaps. The existence of IEs and tunable interlayer band gaps in these heterobilayers is verified by steady-state photoluminescence experiments. By tuning the composition of the WS2(1-x)Se2x alloy layers, we realized a very wide tunable band gap range of 1.97-1.40 eV with a wavelength-tunable IE emission range of 1.52-1.40 eV from the heterobilayers. The time-resolved photoluminescence experiments show the IE emission lifetimes over nanoseconds.
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Affiliation(s)
- Lihui Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Chao Ma
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Hepeng Zhao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Feng Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Ouyang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xianwei Fu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Peng Fan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Min Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yang Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Yu Xiao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Wenpeng Cao
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
| | - Ying Jiang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiaoli Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Xiujuan Zhuang
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, School of Physics and Electronics, Hunan University, Changsha 410082, People's Republic of China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, People's Republic of China
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21
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Afzal AM, Dastgeer G, Iqbal MZ, Gautam P, Faisal MM. High-Performance p-BP/n-PdSe 2 Near-Infrared Photodiodes with a Fast and Gate-Tunable Photoresponse. ACS APPLIED MATERIALS & INTERFACES 2020; 12:19625-19634. [PMID: 32242654 DOI: 10.1021/acsami.9b22898] [Citation(s) in RCA: 7] [Impact Index Per Article: 1.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/12/2023]
Abstract
Van der Waals heterostructures composed of transition-metal dichalcogenide (TMD) materials have become a remarkable compact system that could offer an innovative architecture for advanced engineering in high-performance energy-harvesting and optoelectronic devices. Here, we report a novel van der Waals (vdW) TMD heterojunction photodiode composed of black phosphorus (p-BP) and palladium diselenide (n-PdSe2), which establish a high and tunable rectification and photoresponsivity. A high rectification up to ≈7.1 × 105 is achieved, which is successfully tuned by employing the back-gate voltage to the heterostructure devices. Besides, the device significantly shows the high and gate-controlled photoresponsivity of R = 9.6 × 105, 4.53 × 105 and 1.63 × 105 A W-1 under the influence of light of different wavelengths (λ = 532, 1064, and 1310 nm) in visible and near-infrared regions, respectively, because of interlayer optical transition and low Schottky. The device also demonstrates extraordinary values of detectivity (D = 5.8 × 1013 Jones) and external quantum efficiency (EQE ≈ 9.4 × 106), which are an order of magnitude higher than the currently reported values. The effective enhancement of photovoltaic characteristics in visible and infrared regions of this TMD heterostructure-based system has a huge potential in the field of optoelectronics to realize high-performance infrared photodetectors.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological Physics, KwangWoon University, Seoul 01897, Republic of Korea
| | - Ghulam Dastgeer
- IBS Center for Integrated Nanostructure Physics, Sungkyunkwan University, Suwon 16419, Republic of Korea
| | - Muhammad Zahir Iqbal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
| | - Praveen Gautam
- Department of Physics & Astronomy and Graphene Research Institute, Sejong University, Seoul 05006, Korea
| | - Mian Muhammad Faisal
- Nanotechnology Research Laboratory, Faculty of Engineering Sciences, GIK Institute of Engineering Sciences and Technology, Topi 23640, Khyber Pakhtunkhwa, Pakistan
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22
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Ran W, Wang L, Zhao S, Wang D, Yin R, Lou Z, Shen G. An Integrated Flexible All-Nanowire Infrared Sensing System with Record Photosensitivity. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2020; 32:e1908419. [PMID: 32104957 DOI: 10.1002/adma.201908419] [Citation(s) in RCA: 21] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/23/2019] [Revised: 02/06/2020] [Indexed: 05/28/2023]
Abstract
Infrared (IR) photodetectors are a key optoelectronic device and have thus attracted considerable research attention in recent years. Photosensitivity is an increasingly important device performance parameter for nanoscale photodetectors and image sensors, as it determines the ultimate imaging quality and contrast. However, photosensitivities of state-of-the-art low-dimensional nanostructure-based IR detectors are considerably low, limiting their practical applications. Herein, a biomimetic IR detection amplification (IRDA) system that boosts photosensitivity by several orders of magnitude by introducting nanowire field effect transistors (FETs), resulting in a peak photosensitivity of 7.6 × 104 under an illumination of 1342 nm, is presented. Consequently, high-contrast imaging of IR light is obtained on the flexible IRDA arrays. The image information can be then trained and recognized by an artificial neural network for higher image-recognition efficiency. This work provides a new perspective for developing high-performance IR imaging systems, and is expected to undoubtedly enlighten future work on artificial intelligence and biorobotic systems.
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Affiliation(s)
- Wenhao Ran
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Lili Wang
- State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun, 130012, P. R. China
| | - Shufang Zhao
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Depeng Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Ruiyang Yin
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Zheng Lou
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
| | - Guozhen Shen
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences and Center of Materials Science and Optoelectronic Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China
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23
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Li M, Wang Y, Yu Z, Fu Y, Zheng J, Liu Y, Cui J, Zhou H, Li D. Self-Powered Infrared-Responsive Electronic Skin Employing Piezoelectric Nanofiber Nanocomposites Driven by Microphase Transition. ACS APPLIED MATERIALS & INTERFACES 2020; 12:13165-13173. [PMID: 32106679 DOI: 10.1021/acsami.9b21766] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Infrared light (IR) detection principles limited by poor photoresponsivity and sparse photogenerated carrier make them impossible to directly applied in flexible IR sensing field attributed to low π-π conjugation effect, thick P-N junction, and harsh band gap, of which IR self-powered electronic skin (e-skin) strongly relies on the essential property of exotic photosensitive-exciting materials, hardly any flexible organic polymer or nanocomposites. Here, an innovative IR self-powered principle is reported that outstanding piezoelectric effect of poly(vinylidene fluoride) nanofibers (PVDF NFs) is driven by microcrystals' volume expansion caused by the solid-solid phase transition of PVDF/multiwalled carbon nanotubes (MWCNTs)/highly elastic phase change polymer (HEPCP) (PMH) nanocomposites due to MWCNT's excellent IR photoabsorption and thermal conversion capabilities. A flexible IR-sensitive nanocomposite is successfully developed employing PVDF/HEPCP NFs as the framework of a three-dimensional network structure wrapped by the MWCNT/HEPCP nanocomposite. The 33, 50, and 60 wt % PMH nanocomposites are demonstrated cyclic, IR-regulated on/off piezoelectric sensitivity of 889.7, 977.6, and 493.8 mV/(mW·mm-2) at IR powers of 5.3 mW/mm2, respectively. Furthermore, IR self-powered e-skin has been developed successfully and realized an accurate IR stimulus-sensing location due to the sensitivity, which depends on the size of the sensing area. This innovative strategy provides a new route to the fundamental science and applications of flexible IR self-powered devices, such as e-skin, artificial vision, soft robots, active surveillance sensors, etc.
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Affiliation(s)
- Mei Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
| | - Yunming Wang
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
| | - Zhaohan Yu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
| | - Yue Fu
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
| | - Jiaqi Zheng
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
| | - Yang Liu
- Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16801, United States
| | - Jingqiang Cui
- Henan Key Laboratory of Medical Polymer Materials Technology and Application, TuoRen Medical Device Research & Development Institute Co., Ltd., Health Technology Industry Park Changyuan County, Henan 453000, P. R. China
| | - Huamin Zhou
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
| | - Dequn Li
- State Key Laboratory of Material Processing and Die & Mould Technology, School of Materials Science and Engineering, Huazhong University of Science & Technology, Wuhan 430074, P. R. China
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Varghese A, Saha D, Thakar K, Jindal V, Ghosh S, Medhekar NV, Ghosh S, Lodha S. Near-Direct Bandgap WSe 2/ReS 2 Type-II pn Heterojunction for Enhanced Ultrafast Photodetection and High-Performance Photovoltaics. NANO LETTERS 2020; 20:1707-1717. [PMID: 32078333 DOI: 10.1021/acs.nanolett.9b04879] [Citation(s) in RCA: 52] [Impact Index Per Article: 13.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Pn heterojunctions comprising layered van der Waals (vdW) semiconductors have been used to demonstrate current-rectifiers, photodetectors, and photovoltaic devices. However, a direct or near-direct heterointerface bandgap for enhanced photogeneration in high light-absorbing few-layer vdW materials remains unexplored. In this work, for the first time, density functional theory calculations show that the heterointerface of few-layer group-6 transition metal dichalcogenide (TMD) WSe2 with group-7 ReS2 results in a sizable (0.7 eV) near-direct type-II bandgap. The interlayer IR bandgap is confirmed through IR photodetection, and microphotoluminescence measurements demonstrate type-II alignment. Few-layer flakes exhibit ultrafast response time (5 μs), high responsivity (3 A/W), and large photocurrent-generation and responsivity-enhancement at the hetero-overlap region (10-100×). Large open-circuit voltage of 0.64 V and short-circuit current of 2.6 μA enable high output electrical power. Finally, long-term air-stability and facile single contact metal fabrication process make the multifunctional few-layer WSe2/ReS2 heterostructure diode technologically promising for next-generation optoelectronics.
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Affiliation(s)
- Abin Varghese
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
- IITB-Monash Research Academy, IIT Bombay, Mumbai 400076, India
| | - Dipankar Saha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Kartikey Thakar
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Vishwas Jindal
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
| | - Sayantan Ghosh
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
| | - Nikhil V Medhekar
- Department of Materials Science and Engineering, Monash University, Clayton, Victoria 3800, Australia
| | - Sandip Ghosh
- Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Mumbai 400005, India
| | - Saurabh Lodha
- Department of Electrical Engineering, Indian Institute of Technology Bombay, Mumbai 400076, India
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25
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Afzal AM, Javed Y, Akhtar Shad N, Iqbal MZ, Dastgeer G, Munir Sajid M, Mumtaz S. Tunneling-based rectification and photoresponsivity in black phosphorus/hexagonal boron nitride/rhenium diselenide van der Waals heterojunction diode. NANOSCALE 2020; 12:3455-3468. [PMID: 31990280 DOI: 10.1039/c9nr07971h] [Citation(s) in RCA: 13] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Tunneling-based van der Waals (vdW) heterostructures composed of layered transition metal dichalcogenides (TMDs) are emerging as a unique compact system that provides new research avenues in electronics and optoelectronics. Here, we designed a black phosphorus (BP)/rhenium diselenide (ReSe2) and black phosphorus (BP)/hexagonal boron nitride (h-BN)/rhenium diselenide (ReSe2) vdW heterojunction-based diode and studied the tunneling-based different phenomena, such as rectification, negative differential resistance (NDR) and backward rectification. Further, we measured a gate-tunable and tunneling-based rectifying current in BP/ReSe2 and BP/h-BN/ReSe2 heterojunction diodes, and achieved the highest tunneling-based rectification ratio of up to (RR ≈ 3.4 × 107). The high rectifying current is explained using the Simmons-based approximation through direct tunneling (DT) and Fowler-Nordheim tunneling (FNT) in low and high bias regimes. Furthermore, we extracted the photoresponsivity (R ≈ 12 mA W-1) and external quantum efficiency (EQE ≈ 2.79%) under an illuminated laser light source of wavelength 532 nm. Finally, we demonstrated the potential application of our heterostructure devices, such as a binary inverter, rectifier and switching operation at a high frequency. Our tunneling-based heterostructure device could operate at frequencies up to the GHz range. Therefore, our findings provide a new paragon to use the TMD-based vdW heterostructure in electronic and optoelectronic applications, such as multi-valued logic.
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Affiliation(s)
- Amir Muhammad Afzal
- Department of Electrical and Biological Physics, Kwangwoon University, Seoul, 01897, Republic of Korea.
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26
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Cho AJ, Kwon JY. Hexagonal Boron Nitride for Surface Passivation of Two-Dimensional van der Waals Heterojunction Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2019; 11:39765-39771. [PMID: 31577117 DOI: 10.1021/acsami.9b11219] [Citation(s) in RCA: 6] [Impact Index Per Article: 1.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Two-dimensional (2D) semiconductors can be promising active materials for solar cells due to their advantageous electrical and optical properties, in addition to their ability to form high-quality van der Waals (vdW) heterojunctions using a simple process. Furthermore, the atomically thin nature of these 2D materials allows them to form lightweight and transparent thin-film solar cells. However, strategies appropriate for optimizing their properties have not been extensively studied yet. In this paper, we propose a method for reducing the electrical loss of 2D vdW solar cells by introducing hexagonal boron nitride (h-BN) as a surface passivation layer. This method allowed us to enhance the photovoltaic performance of a MoS2/WSe2 solar cell. In particular, we observed ∼74% improvement of the power conversion efficiency owing to a large increase in both short-circuit current and open-circuit voltage. Such a remarkable performance enhancement was due to the reduction of the recombination rate at the junction and surface of nonoverlapped semiconductor regions, which was confirmed via a time-resolved photoluminescence analysis. Furthermore, the h-BN top layer was found to improve the long-term stability of the tested 2D solar cell under ambient conditions. We observed the evolution of our MoS2/WSe2 solar cell for a month and found that h-BN passivation effectively suppressed its degradation speed. In particular, the degradation speed of the passivated cell was twice as low as that of a nonpassivated cell. This work reveals that h-BN can successfully suppress the electrical loss and degradation of 2D vdW heterojunction solar cells under ambient conditions.
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Affiliation(s)
- Ah-Jin Cho
- School of Integrated Technology , Yonsei University , Incheon 21983 , South Korea
- Yonsei Institute of Convergence Technology , Incheon 21983 , South Korea
| | - Jang-Yeon Kwon
- School of Integrated Technology , Yonsei University , Incheon 21983 , South Korea
- Yonsei Institute of Convergence Technology , Incheon 21983 , South Korea
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27
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Foisal ARM, Nguyen T, Dinh T, Nguyen TK, Tanner P, Streed EW, Dao DV. 3C-SiC/Si Heterostructure: An Excellent Platform for Position-Sensitive Detectors Based on Photovoltaic Effect. ACS APPLIED MATERIALS & INTERFACES 2019; 11:40980-40987. [PMID: 31578848 DOI: 10.1021/acsami.9b15855] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.6] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
Single-crystalline silicon carbide (3C-SiC) on the Si substrate has drawn significant attention in recent years due to its low wafer cost and excellent mechanical, chemical, and optoelectronic properties. However, the applications of the structure have primarily been focused on piezoresistive and pressure sensors, bio-microelectromechanical system, and photonics. Herein, we report another promising application of the heterostructure as a laser spot position-sensitive detector (PSD) based on the lateral photovoltaic effect (LPE) under nonuniform optical illuminations at zero-bias conditions. The LPE shows a linear dependence on spot positions, and the sensitivity is found to be as high as 33 mV/mm under an illumination of 2.8 W/cm2 (635 nm). The structure also exhibits a linear dependence of the LPE over a large distance (7 mm) between two electrodes, which is crucial for PSDs as the region with a linear dependence of LPE is only usable for PSDs. The LPE at different spot positions and under different illumination conditions have been investigated and explained based on the energy-band analysis. The temperature dependence of the LPE and position sensitivity is also investigated. Furthermore, the two-dimensional mapping of the lateral photovoltages reveals the potential for utilizing the 3C-SiC/Si heterostructure to detect the laser spot position precisely on a plane.
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Affiliation(s)
| | | | | | | | | | - Erik W Streed
- Centre for Quantum Dynamics , Griffith University , Brisbane , Queensland 4111 , Australia
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28
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Ultrasensitive MoS 2 photodetector by serial nano-bridge multi-heterojunction. Nat Commun 2019; 10:4701. [PMID: 31619671 PMCID: PMC6796006 DOI: 10.1038/s41467-019-12592-w] [Citation(s) in RCA: 35] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/01/2019] [Accepted: 09/12/2019] [Indexed: 12/04/2022] Open
Abstract
The recent reports of various photodetectors based on molybdenum disulfide (MoS2) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible–infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS2, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 106 A/W at λ = 520 nm and 1.65 × 104 A/W at λ = 1064 nm) superior to the previously reported MoS2-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process. Fabrication of photodetector devices by selective etching of 2D materials can enable broadband detection. Here, the authors design mono- and multi-layer nano-bridge multi-heterojunction photodetectors based on MoS2 with high responsivities of 2.67 × 106 A/W and 1.65 × 104 A/W in the visible–infrared wavelength range and fast photoresponse.
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29
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Zheng W, Zheng B, Jiang Y, Yan C, Chen S, Liu Y, Sun X, Zhu C, Qi Z, Yang T, Huang W, Fan P, Jiang F, Wang X, Zhuang X, Li D, Li Z, Xie W, Ji W, Wang X, Pan A. Probing and Manipulating Carrier Interlayer Diffusion in van der Waals Multilayer by Constructing Type-I Heterostructure. NANO LETTERS 2019; 19:7217-7225. [PMID: 31545057 DOI: 10.1021/acs.nanolett.9b02824] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
van der Waals multilayer heterostructures have drawn increasing attention due to the potential for achieving high-performance photonic and optoelectronic devices. However, the carrier interlayer transportation behavior in multilayer structures, which is essential for determining the device performance, remains unrevealed. Here, we report a general strategy for studying and manipulating the carrier interlayer transportation in van der Waals multilayers by constructing type-I heterostructures, with a desired narrower bandgap monolayer acting as a carrier extraction layer. For heterostructures comprised of multilayer PbI2 and monolayer WS2, we find similar interlayer diffusion coefficients of ∼0.039 and ∼0.032 cm2 s-1 for electrons and holes in the PbI2 multilayer by fitting the time-resolved carrier dynamics based on the diffusion model. Because of the balanced carrier interlayer diffusion and the injection process at the heterointerface, the photoluminescence emission of the bottom WS2 monolayer is greatly enhanced by up to 106-fold at an optimized PbI2 thickness of the heterostructure. Our results provide valuable information on carrier interlayer transportation in van der Waals multilayer structures and pave the way for utilizing carrier behaviors to improve device performances.
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Affiliation(s)
- Weihao Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Biyuan Zheng
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Ying Jiang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Changlin Yan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro-Nano Devices, Department of Physics , Renmin University of China , Beijing 100872 , China
| | - Shula Chen
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Ying Liu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Xinxia Sun
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Chenguang Zhu
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Zhaoyang Qi
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Tiefeng Yang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Wei Huang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Peng Fan
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Feng Jiang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xiaoxia Wang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Xiujuan Zhuang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Dong Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Ziwei Li
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
| | - Wei Xie
- Quantum Institute for Light and Atoms, School of Physics and Material Science , East China Normal University , Shanghai , 200241 , China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro-Nano Devices, Department of Physics , Renmin University of China , Beijing 100872 , China
| | - Xiao Wang
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
| | - Anlian Pan
- Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, State Key Laboratory of Chemo/Biosensing and Chemometriscs and College of Materials Science and Engineering , Hunan University , Changsha , Hunan 410082 , China
- School of Physics and Electronics , Hunan University , Changsha , Hunan 410082 , China
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30
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Kim SG, Kim SH, Park J, Kim GS, Park JH, Saraswat KC, Kim J, Yu HY. Infrared Detectable MoS 2 Phototransistor and Its Application to Artificial Multilevel Optic-Neural Synapse. ACS NANO 2019; 13:10294-10300. [PMID: 31469532 DOI: 10.1021/acsnano.9b03683] [Citation(s) in RCA: 8] [Impact Index Per Article: 1.6] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/16/2023]
Abstract
Layered two-dimensional (2D) materials have entered the spotlight as promising channel materials for future optoelectronic devices owing to their excellent electrical and optoelectronic properties. However, their limited photodetection range caused by their wide bandgap remains a principal challenge in 2D layered materials-based phototransistors. Here, we developed a germanium (Ge)-gated MoS2 phototransistor that can detect light in the region from visible to infrared (λ = 520-1550 nm) using a detection mechanism based on band bending modulation. In addition, the Ge-gated MoS2 phototransistor is proposed as a multilevel optic-neural synaptic device, which performs both optical-sensing and synaptic functions on one device and is operated in different current ranges according to the light conditions: dark, visible, and infrared. This study is expected to contribute to the development of 2D material-based phototransistors and synaptic devices in next-generation optoelectronics.
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Affiliation(s)
- Seung-Geun Kim
- Department of Semiconductor Systems Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Seung-Hwan Kim
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - June Park
- Department of Nano Semiconductor Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Gwang-Sik Kim
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Jae-Hyeun Park
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
| | - Krishna C Saraswat
- Department of Electrical Engineering , Stanford University , Stanford , California 94305 , United States
| | - Jiyoung Kim
- Department of Materials Science and Engineering , The University of Texas at Dallas , Richardson , Texas 75080 , United States
| | - Hyun-Yong Yu
- Department of Semiconductor Systems Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
- School of Electrical Engineering , Korea University , 145, Anam-ro , Seongbuk-gu , Seoul 02841 , Korea
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Zheng W, Zheng B, Yan C, Liu Y, Sun X, Qi Z, Yang T, Jiang Y, Huang W, Fan P, Jiang F, Ji W, Wang X, Pan A. Direct Vapor Growth of 2D Vertical Heterostructures with Tunable Band Alignments and Interfacial Charge Transfer Behaviors. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2019; 6:1802204. [PMID: 30989032 PMCID: PMC6446596 DOI: 10.1002/advs.201802204] [Citation(s) in RCA: 39] [Impact Index Per Article: 7.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/06/2018] [Revised: 01/16/2019] [Indexed: 05/24/2023]
Abstract
2D vertical van der Waals (vdW) heterostructures with atomically sharp interfaces have attracted tremendous interest in 2D photonic and optoelectronic applications. Band alignment engineering in 2D heterostructures provides a perfect platform for tailoring interfacial charge transfer behaviors, from which desired optical and optoelectronic features can be realized. Here, by developing a two-step chemical vapor deposition strategy, direct vapor growth of monolayer PbI2 on monolayer transition metal dichalcogenides (TMDCs) (WS2, WSe2, or alloying WS2(1- x )Se2 x ), forming bilayer vertical heterostructures, is demonstrated. Based on the calculated electron band structures, the interfacial band alignments of the obtained heterostructures can be gradually tuned from type-I (PbI2/WS2) to type-II (PbI2/WSe2). Steady-state photoluminescence (PL) and time-resolved PL measurements reveal that the PL emissions from the bottom TMDC layers can be modulated from apparently enhanced (for WS2) to greatly quenched (for WSe2) compared to their monolayer counterparts, which can be attributed to the band alignment-induced distinct interfacial charge transfer behaviors. The band alignment nature of the heterostructures is further demonstrated by the PL excitation spectroscopy and interlayer exciton investigation. The realization of 2D vertical heterostructures with tunable band alignments will provide a new material platform for designing and constructing multifunctional optoelectronic devices.
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Affiliation(s)
- Weihao Zheng
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Biyuan Zheng
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Changlin Yan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro–Nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Ying Liu
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Xingxia Sun
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Zhaoyang Qi
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Tiefeng Yang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Ying Jiang
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
| | - Wei Huang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Peng Fan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Feng Jiang
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
| | - Wei Ji
- Beijing Key Laboratory of Optoelectronic Functional Material & Micro–Nano DevicesDepartment of PhysicsRenmin University of ChinaBeijing100872China
| | - Xiao Wang
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
| | - Anlian Pan
- Key Laboratory for Micro–Nano Physics and Technology of Hunan ProvinceState Key Laboratory of Chemo/Biosensing and Chemometrics and College of Materials Science and EngineeringHunan UniversityChangshaHunan410012China
- School of Physics and ElectronicsHunan UniversityChangshaHunan410012China
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