1
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Zhou C, Gao J, Deng Y, Wang M, Li D, Xia C. Electric double layer-mediated polarization field for optimizing photogenerated carrier dynamics and thermodynamics. Nat Commun 2023; 14:3592. [PMID: 37328488 DOI: 10.1038/s41467-023-38600-8] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 11/21/2022] [Accepted: 05/10/2023] [Indexed: 06/18/2023] Open
Abstract
Photocatalytic hydrogen evolution efficiency is limited due to unfavorable carrier dynamics and thermodynamic performance. Here, we propose to introduce electronegative molecules to build an electric double layer (EDL) to generate a polarization field instead of the traditional built-in electric field to improve carrier dynamics, and optimize the thermodynamics by regulating the chemical coordination of surface atoms. Based on theoretical simulation, we designed CuNi@EDL and applied it as the cocatalyst of semiconductor photocatalysts, finally achieved a hydrogen evolution rate of 249.6 mmol h-1 g-1 and remained stable after storing under environmental conditions for more than 300 days. The high H2 yield is mainly due to the perfect work function, Fermi level and Gibbs free energy of hydrogen adsorption, improved light absorption ability, enhanced electron transfer dynamics, decreased HER overpotential and effective carrier transfer channel arose by EDL. Here, our work opens up new perspectives for the design and optimization of photosystems.
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Affiliation(s)
- Chengxin Zhou
- New Energy Materials Laboratory, Sichuan Changhong Electronic (Group) Co.; Ltd., Chengdu, 610041, China
| | - Jian Gao
- New Energy Materials Laboratory, Sichuan Changhong Electronic (Group) Co.; Ltd., Chengdu, 610041, China.
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, China.
| | - Yunlong Deng
- New Energy Materials Laboratory, Sichuan Changhong Electronic (Group) Co.; Ltd., Chengdu, 610041, China
| | - Ming Wang
- New Energy Materials Laboratory, Sichuan Changhong Electronic (Group) Co.; Ltd., Chengdu, 610041, China
| | - Dan Li
- New Energy Materials Laboratory, Sichuan Changhong Electronic (Group) Co.; Ltd., Chengdu, 610041, China
| | - Chuan Xia
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, China.
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2
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Yutomo EB, Noor FA, Winata T. Effect of Ni atomic fraction on active species of graphene growth on Cu–Ni alloy catalysts: a density functional theory study. Phys Chem Chem Phys 2023; 25:708-723. [DOI: 10.1039/d2cp04621k] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 12/12/2022]
Abstract
The CH and C monomers on the surface are the active species on Cu–Ni catalysts with low Ni atomic fractions. In contrast, the C monomer species on the subsurface acts as an active species on a Cu–Ni catalyst with a high Ni atomic fraction.
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Affiliation(s)
- Erik Bhekti Yutomo
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung, 40132, Indonesia
| | - Fatimah Arofiati Noor
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung, 40132, Indonesia
| | - Toto Winata
- Physics of Electronic Materials Research Division, Department of Physics, Faculty of Mathematics and Natural Sciences, Institut Teknologi Bandung, Bandung, 40132, Indonesia
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3
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Carbon induced segregation of Ni atoms in Cu-Ni alloy. Chem Phys Lett 2022. [DOI: 10.1016/j.cplett.2022.139979] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/18/2022]
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4
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Wu R, Hu Y, Li P, Peng J, Hu J, Yang M, Chen D, Guo Y, Zhang Q, Xie X, Dai J, Qiu W, Wang G, Pan M. Controlled Epitaxial Growth and Atomically Sharp Interface of Graphene/Ferromagnetic Heterostructure via Ambient Pressure Chemical Vapor Deposition. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:3112. [PMID: 34835878 PMCID: PMC8620976 DOI: 10.3390/nano11113112] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 09/04/2021] [Revised: 11/12/2021] [Accepted: 11/13/2021] [Indexed: 11/25/2022]
Abstract
The strong spin filtering effect can be produced by C-Ni atomic orbital hybridization in lattice-matched graphene/Ni (111) heterostructures, which provides an ideal platform to improve the tunnel magnetoresistance (TMR) of magnetic tunnel junctions (MTJs). However, large-area, high-quality graphene/ferromagnetic epitaxial interfaces are mainly limited by the single-crystal size of the Ni (111) substrate and well-oriented graphene domains. In this work, based on the preparation of a 2-inch single-crystal Ni (111) film on an Al2O3 (0001) wafer, we successfully achieve the production of a full-coverage, high-quality graphene monolayer on a Ni (111) substrate with an atomically sharp interface via ambient pressure chemical vapor deposition (APCVD). The high crystallinity and strong coupling of the well-oriented epitaxial graphene/Ni (111) interface are systematically investigated and carefully demonstrated. Through the analysis of the growth model, it is shown that the oriented growth induced by the Ni (111) crystal, the optimized graphene nucleation and the subsurface carbon density jointly contribute to the resulting high-quality graphene/Ni (111) heterostructure. Our work provides a convenient approach for the controllable fabrication of a large-area homogeneous graphene/ferromagnetic interface, which would benefit interface engineering of graphene-based MTJs and future chip-level 2D spintronic applications.
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Affiliation(s)
- Ruinan Wu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Yueguo Hu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Peisen Li
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Junping Peng
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Jiafei Hu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Ming Yang
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China; (M.Y.); (J.D.)
| | - Dixiang Chen
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Yanrui Guo
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Qi Zhang
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Xiangnan Xie
- State Key Laboratory of High Performance Computing, College of Computer Science and Technology, National University of Defense Technology, Changsha 410073, China;
| | - Jiayu Dai
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China; (M.Y.); (J.D.)
| | - Weicheng Qiu
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
| | - Guang Wang
- Department of Physics, College of Liberal Arts and Sciences, National University of Defense Technology, Changsha 410073, China; (M.Y.); (J.D.)
- State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China
| | - Mengchun Pan
- College of Intelligence Science and Technology, National University of Defense Technology, Changsha 410073, China; (R.W.); (Y.H.); (P.L.); (J.P.); (J.H.); (D.C.); (Y.G.); (Q.Z.)
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5
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Jiang B, Wang S, Sun J, Liu Z. Controllable Synthesis of Wafer-Scale Graphene Films: Challenges, Status, and Perspectives. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2008017. [PMID: 34106524 DOI: 10.1002/smll.202008017] [Citation(s) in RCA: 5] [Impact Index Per Article: 1.7] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/21/2020] [Revised: 02/22/2021] [Indexed: 06/12/2023]
Abstract
The availability of high-quality, large-scale, and single-crystal wafer-scale graphene films is fundamental for key device applications in the field of electronics, optics, and sensors. Synthesis determines the future: unleashing the full potentials of such emerging materials relies heavily upon their tailored synthesis in a scalable fashion, which is by no means an easy task to date. This review covers the state-of-the-art progress in the synthesis of wafer-scale graphene films by virtue of chemical vapor deposition (CVD), with a focus on main challenges and present status. Particularly, prevailing synthetic strategies are highlighted on a basis of the discussion in the reaction kinetics and gas-phase dynamics during CVD process. Perspectives with respect to key opportunities and promising research directions are proposed to guide the future development of wafer-scale graphene films.
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Affiliation(s)
- Bei Jiang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Shiwei Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
| | - Jingyu Sun
- College of Energy, Soochow Institute for Energy and Materials InnovationS (SIEMIS), Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, Soochow University, Suzhou, 215006, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, P. R. China
- Beijing Graphene Institute (BGI), Beijing, 100095, P. R. China
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6
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Sun L, Wang Z, Wang Y, Zhao L, Li Y, Chen B, Huang S, Zhang S, Wang W, Pei D, Fang H, Zhong S, Liu H, Zhang J, Tong L, Chen Y, Li Z, Rümmeli MH, Novoselov KS, Peng H, Lin L, Liu Z. Hetero-site nucleation for growing twisted bilayer graphene with a wide range of twist angles. Nat Commun 2021; 12:2391. [PMID: 33888688 PMCID: PMC8062483 DOI: 10.1038/s41467-021-22533-1] [Citation(s) in RCA: 45] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/26/2020] [Accepted: 03/17/2021] [Indexed: 11/09/2022] Open
Abstract
Twisted bilayer graphene (tBLG) has recently attracted growing interest due to its unique twist-angle-dependent electronic properties. The preparation of high-quality large-area bilayer graphene with rich rotation angles would be important for the investigation of angle-dependent physics and applications, which, however, is still challenging. Here, we demonstrate a chemical vapor deposition (CVD) approach for growing high-quality tBLG using a hetero-site nucleation strategy, which enables the nucleation of the second layer at a different site from that of the first layer. The fraction of tBLGs in bilayer graphene domains with twist angles ranging from 0° to 30° was found to be improved to 88%, which is significantly higher than those reported previously. The hetero-site nucleation behavior was carefully investigated using an isotope-labeling technique. Furthermore, the clear Moiré patterns and ultrahigh room-temperature carrier mobility of 68,000 cm2 V-1 s-1 confirmed the high crystalline quality of our tBLG. Our study opens an avenue for the controllable growth of tBLGs for both fundamental research and practical applications.
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Affiliation(s)
- Luzhao Sun
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Zihao Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Yuechen Wang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China
| | - Liang Zhao
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Yanglizhi Li
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Academy for Advanced Interdisciplinary Studies, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Buhang Chen
- Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Shenghong Huang
- Department of Modern Mechanics, University of Science and Technology of China, Hefei, 230026, People's Republic of China.
| | - Shishu Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Wendong Wang
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Ding Pei
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Hongwei Fang
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Shan Zhong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Haiyang Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Jincan Zhang
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China.,Beijing Graphene Institute, Beijing, 100095, People's Republic of China
| | - Lianming Tong
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Yulin Chen
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK.,School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Zhenyu Li
- Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, 230026, People's Republic of China
| | - Mark H Rümmeli
- Soochow Institute for Energy and Materials Innovation, Soochow University, Suzhou, 215006, People's Republic of China
| | - Kostya S Novoselov
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK
| | - Hailin Peng
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
| | - Li Lin
- School of Physics and Astronomy, University of Manchester, Manchester, M13 9PL, UK.
| | - Zhongfan Liu
- Center for Nanochemistry, Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China. .,Beijing Graphene Institute, Beijing, 100095, People's Republic of China.
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7
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8
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Li Y, Sun L, Liu H, Wang Y, Liu Z. Preparation of single-crystal metal substrates for the growth of high-quality two-dimensional materials. Inorg Chem Front 2021. [DOI: 10.1039/d0qi00923g] [Citation(s) in RCA: 10] [Impact Index Per Article: 3.3] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/15/2023]
Abstract
Recent advances on preparing single-crystal metals and their crucial roles in controlled growth of high-quality 2D materials are reviewed.
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Affiliation(s)
- Yanglizhi Li
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Luzhao Sun
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Haiyang Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Yuechen Wang
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
| | - Zhongfan Liu
- Center for Nanochemistry
- Beijing Science and Engineering Center for Nanocarbons
- Beijing National Laboratory for Molecular Sciences
- College of Chemistry and Molecular Engineering
- Peking University
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9
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Rational Design of Binary Alloys for Catalytic Growth of Graphene via Chemical Vapor Deposition. Catalysts 2020. [DOI: 10.3390/catal10111305] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/16/2022] Open
Abstract
Chemical vapor deposition is the most promising technique for the mass production of high-quality graphene, in which the metal substrate plays a crucial role in the catalytic decomposition of the carbon source, assisting the attachment of the active carbon species, and regulating the structure of the graphene film. Due to some drawbacks of single metal substrates, alloy substrates have gradually attracted attention owing to their complementarity in the catalytic growth of graphene. In this review, we focus on the rational design of binary alloys, such as Cu/Ni, Ni/Mo, and Cu/Si, to control the layer numbers and growth rate of graphene. By analyzing the elementary steps of graphene growth, general principles are summarized in terms of the catalytic activity, metal–carbon interactions, carbon solubility, and mutual miscibility. Several challenges in this field are also put forward to inspire the novel design of alloy catalysts and the synthesis of graphene films bearing desirable properties.
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10
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Sharma I, Papanai GS, Paul SJ, Gupta BK. Partial Pressure Assisted Growth of Single-Layer Graphene Grown by Low-Pressure Chemical Vapor Deposition: Implications for High-Performance Graphene FET Devices. ACS OMEGA 2020; 5:22109-22118. [PMID: 32923769 PMCID: PMC7482075 DOI: 10.1021/acsomega.0c02132] [Citation(s) in RCA: 3] [Impact Index Per Article: 0.8] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/08/2020] [Accepted: 08/13/2020] [Indexed: 06/01/2023]
Abstract
An attempt has been made to understand the thermodynamic mechanism study of the low-pressure chemical vapor deposition (LPCVD) process during single-layer graphene (SLG) growth as it is the most debatable part of the CVD process. The intensive studies are being carried out worldwide to enhance the quality of LPCVD-grown graphene up to the level of mechanically exfoliated SLG. The mechanism and processes have been discussed earlier by several research groups during the variation in different parameters. However, the optimization and mechanism involvement due to individual partial pressure-based effects has not been elaborately discussed so far. Hence, we have addressed this issue in detail including thermodynamics of the growth process and tried to establish the effect of the partial pressures of individual gases during the growth of SLG. Also, optical microscopy, Raman spectroscopy, and atomic force microscopy (AFM) have been performed to determine the quality of SLG. Furthermore, nucleation density has also been estimated to understand a plausible mechanism of graphene growth based on partial pressure. Moreover, the field-effect transistor (FET) device has been fabricated to determine the electrical properties of SLG, and the estimated mobility has been found as ∼2595 cm2 V-1 s-1 at n = -2 × 1012 cm-2. Hence, the obtained results trigger that the partial pressure is an important parameter for the growth of SLG and having various potential applications in high-performance graphene FET (GFET) devices.
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Affiliation(s)
- Indu Sharma
- Photonic
Materials Metrology Sub Division, Advanced Materials and Device Metrology
Division, CSIR—National Physical
Laboratory, New Delhi 110012, India
| | - Girija Shankar Papanai
- Photonic
Materials Metrology Sub Division, Advanced Materials and Device Metrology
Division, CSIR—National Physical
Laboratory, New Delhi 110012, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
| | - Sharon Jyotika Paul
- Photonic
Materials Metrology Sub Division, Advanced Materials and Device Metrology
Division, CSIR—National Physical
Laboratory, New Delhi 110012, India
- Department
of Chemistry, Institute of Basic Science, Bundelkhand University, Jhansi, Uttar Pradesh 284128, India
| | - Bipin Kumar Gupta
- Photonic
Materials Metrology Sub Division, Advanced Materials and Device Metrology
Division, CSIR—National Physical
Laboratory, New Delhi 110012, India
- Academy
of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India
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11
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Solís-Fernández P, Terao Y, Kawahara K, Nishiyama W, Uwanno T, Lin YC, Yamamoto K, Nakashima H, Nagashio K, Hibino H, Suenaga K, Ago H. Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene. ACS NANO 2020; 14:6834-6844. [PMID: 32407070 DOI: 10.1021/acsnano.0c00645] [Citation(s) in RCA: 15] [Impact Index Per Article: 3.8] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/11/2023]
Abstract
Controlling the stacking order in bilayer graphene (BLG) allows realizing interesting physical properties. In particular, the possibility of tuning the band gap in Bernal-stacked (AB) BLG (AB-BLG) has a great technological importance for electronic and optoelectronic applications. Most of the current methods to produce AB-BLG suffer from inhomogeneous layer thickness and/or coexistence with twisted BLG. Here, we demonstrate a method to synthesize highly pure large-area AB-BLG by chemical vapor deposition using Cu-Ni films. Increasing the reaction time resulted in a gradual increase of the AB stacking, with the BLG eventually free from twist regions for the longer growth times (99.4% of BLG has AB stacking), due to catalyst-assisted continuous BLG reconstruction driven by carbon dissolution-segregation processes. The band gap opening was confirmed by the electrical measurements on field-effect transistors using two different device configurations. The concept of the continuous reconstruction to achieve highly pure AB-BLG offers a way to control the stacking order of catalytically grown two-dimensional materials.
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Affiliation(s)
| | - Yuri Terao
- Interdisciplinary Graduate School of Engineering Science, Kyushu University, Fukuoka 816-8580, Japan
| | - Kenji Kawahara
- Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan
| | - Wataru Nishiyama
- Department of Materials Engineering, University of Tokyo, Tokyo 113-8656, Japan
| | - Teerayut Uwanno
- Department of Materials Engineering, University of Tokyo, Tokyo 113-8656, Japan
| | - Yung-Chang Lin
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Keisuke Yamamoto
- Interdisciplinary Graduate School of Engineering Science, Kyushu University, Fukuoka 816-8580, Japan
| | - Hiroshi Nakashima
- Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan
- Interdisciplinary Graduate School of Engineering Science, Kyushu University, Fukuoka 816-8580, Japan
| | - Kosuke Nagashio
- Department of Materials Engineering, University of Tokyo, Tokyo 113-8656, Japan
| | - Hiroki Hibino
- School of Science and Technology, Kwansei Gakuin University, Hyogo 669-1337, Japan
| | - Kazu Suenaga
- National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba 305-8565, Japan
| | - Hiroki Ago
- Global Innovation Center (GIC), Kyushu University, Fukuoka 816-8580, Japan
- Interdisciplinary Graduate School of Engineering Science, Kyushu University, Fukuoka 816-8580, Japan
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12
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Su Z, Sun X, Liu X, Zhang J, Sun L, Zhang X, Liu Z, Yu F, Li Y, Cheng X, Ding Y, Zhao X. A Strategy To Prepare High-Quality Monocrystalline Graphene: Inducing Graphene Growth with Seeding Chemical Vapor Deposition and Its Mechanism. ACS APPLIED MATERIALS & INTERFACES 2020; 12:1306-1314. [PMID: 31823598 DOI: 10.1021/acsami.9b16549] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/10/2023]
Abstract
High-quality monocrystalline graphene has gained considerable attention in fundamental physics, materials science, and nanoelectronics. However, the performance of the graphene obtained by chemical synthesis methods is currently significantly restricted by the crystal quality. Herein, a seeding chemical vapor deposition (SCVD) method is designed to cultivate high-quality monocrystalline graphene on a Cu(111) substrate with hexagonal boron nitride (h-BN) as the seed crystal. Combining the experimental and theoretical research, the nucleation behavior of the growth-induced graphene on the h-BN seed crystal is investigated, and the induced growth mechanism on the Cu(111) substrate is studied. The results show that the h-BN seed crystal can dramatically reduce the adsorption energy of active carbon atoms and the energy barrier for C-C aggregation at the BN/Cu(111) step, thus promoting graphene growth around the h-BN seed. Large monocrystalline graphene domains are obtained by the proposed SCVD method. Further study shows that the growth-induced graphene has good crystal quality and could maintain high structural integrity. This new strategy can be applied for growing high-quality graphene and other two-dimensional materials.
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Affiliation(s)
- Zhen Su
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Xiucai Sun
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Xizheng Liu
- Tianjin Key Laboratory of Advanced Functional Porous Materials, Institute for New Energy Materials and Low-Carbon Technologies, School of Materials Science and Engineering , Tianjin University of Technology , Tianjin 300384 , P. R. China
| | - Jing Zhang
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Li Sun
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Xue Zhang
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Zhenxing Liu
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Fapeng Yu
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Yanlu Li
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Xiufeng Cheng
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
| | - Yi Ding
- Tianjin Key Laboratory of Advanced Functional Porous Materials, Institute for New Energy Materials and Low-Carbon Technologies, School of Materials Science and Engineering , Tianjin University of Technology , Tianjin 300384 , P. R. China
| | - Xian Zhao
- State Key Laboratory of Crystal Materials, Center for Optics Research and Engineering , Shandong University , Jinan 250100 , P. R. China
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13
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A Strategy to Synthesize Multilayer Graphene in Arc-Discharge Plasma in a Semi-Opened Environment. MATERIALS 2019; 12:ma12142279. [PMID: 31315197 PMCID: PMC6678627 DOI: 10.3390/ma12142279] [Citation(s) in RCA: 10] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2019] [Revised: 07/02/2019] [Accepted: 07/05/2019] [Indexed: 11/16/2022]
Abstract
Graphene, as the earliest discovered two-dimensional (2D) material, possesses excellently physical and chemical properties. Vast synthetic strategies, including chemical vapor deposition, mechanical exfoliation, and chemical reduction, are proposed. In this paper, a method to synthesize multilayer graphene in a semi-opened environment is presented by introducing arc-discharge plasma technology. Compared with previous technologies, the toxic gases and hazardous chemical components are not generated in the whole process. The synthesized carbon materials were characterized by transmission electron microscopy, atomic force microscopy, X-ray diffraction, and Raman spectra technologies. The paper offers an idea to synthesize multilayer graphene in a semi-opened environment, which is a development to produce graphene with arc-discharge plasma.
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14
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Deng B, Xin Z, Xue R, Zhang S, Xu X, Gao J, Tang J, Qi Y, Wang Y, Zhao Y, Sun L, Wang H, Liu K, Rummeli MH, Weng LT, Luo Z, Tong L, Zhang X, Xie C, Liu Z, Peng H. Scalable and ultrafast epitaxial growth of single-crystal graphene wafers for electrically tunable liquid-crystal microlens arrays. Sci Bull (Beijing) 2019; 64:659-668. [PMID: 36659648 DOI: 10.1016/j.scib.2019.04.030] [Citation(s) in RCA: 56] [Impact Index Per Article: 11.2] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/17/2019] [Revised: 04/20/2019] [Accepted: 04/22/2019] [Indexed: 01/21/2023]
Abstract
The scalable growth of wafer-sized single-crystal graphene in an energy-efficient manner and compatible with wafer process is critical for the killer applications of graphene in high-performance electronics and optoelectronics. Here, ultrafast epitaxial growth of single-crystal graphene wafers is realized on single-crystal Cu90Ni10(1 1 1) thin films fabricated by a tailored two-step magnetron sputtering and recrystallization process. The minor nickel (Ni) content greatly enhances the catalytic activity of Cu, rendering the growth of a 4 in. single-crystal monolayer graphene wafer in 10 min on Cu90Ni10(1 1 1), 50 folds faster than graphene growth on Cu(1 1 1). Through the carbon isotope labeling experiments, graphene growth on Cu90Ni10(1 1 1) is proved to be exclusively surface-reaction dominated, which is ascribed to the Cu surface enrichment in the CuNi alloy, as indicated by element in-depth profile. One of the best benefits of our protocol is the compatibility with wafer process and excellent scalability. A pilot-scale chemical vapor deposition (CVD) system is designed and built for the mass production of single-crystal graphene wafers, with productivity of 25 pieces in one process cycle. Furthermore, we demonstrate the application of single-crystal graphene in electrically controlled liquid-crystal microlens arrays (LCMLA), which exhibit highly tunable focal lengths near 2 mm under small driving voltages. By integration of the graphene based LCMLA and a CMOS sensor, a prototype camera is proposed that is available for simultaneous light-field and light intensity imaging. The single-crystal graphene wafers could hold great promising for high-performance electronics and optoelectronics that are compatible with wafer process.
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Affiliation(s)
- Bing Deng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Zhaowei Xin
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Ruiwen Xue
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Shishu Zhang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xiaozhi Xu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Jing Gao
- Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Jilin Tang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices, and Joint International Research Laboratory of Carbon-Based Functional Materials and Devices, Soochow University, Suzhou 215123, China
| | - Yue Qi
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Yani Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Yan Zhao
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Luzhao Sun
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Academy for Advanced Interdisciplinary Studies, Peking University, Beijing 100871, China
| | - Huihui Wang
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Kaihui Liu
- State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China
| | - Mark H Rummeli
- Key Laboratory of Advanced Carbon Materials and Wearable Energy Technologies of Jiangsu Province, College of Energy, Soochow Institute for Energy and Materials Innovations, Soochow University, Suzhou 215006, China; Centre of Polymer and Carbon Materials, Polish Academy of Sciences, Zabrze 41-819, Poland
| | - Lu-Tao Weng
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Zhengtang Luo
- Department of Chemical and Biological Engineering, Materials Characterization and Preparation Facility, The Hong Kong University of Science and Technology, Hong Kong 999077, China
| | - Lianming Tong
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China
| | - Xinyu Zhang
- Wuhan National Laboratory for Optoelectronics, School of Automation, National Key Laboratory of Science and Technology on Multispectral Information Processing, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Changsheng Xie
- Wuhan National Laboratory for Optoelectronics, Huazhong University of Science & Technology, Wuhan 430074, China
| | - Zhongfan Liu
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
| | - Hailin Peng
- Center for Nanochemistry (CNC), Beijing Science and Engineering Center for Nanocarbons, Beijing National Laboratory for Molecular Sciences (BNLMS), College of Chemistry and Molecular Engineering, Peking University, Beijing 100871, China; Beijing Graphene Institute (BGI), Beijing 100094, China.
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