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Meng R, Jiang Q, Liu D. Fullerene-Based Heterojunctions for Non-Selective Absorption Transparent Solar Cells. ACS OMEGA 2024; 9:25960-25967. [PMID: 38911775 PMCID: PMC11190905 DOI: 10.1021/acsomega.4c00823] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 01/24/2024] [Revised: 04/03/2024] [Accepted: 05/23/2024] [Indexed: 06/25/2024]
Abstract
Transparent photovoltaic (TPV) devices have great potential to be applied as smart windows in construction and agriculture fields. TPVs with an average visible transmission (AVT) exceeding 50% are among the strong candidates to build lighting windows since the champion efficiency has already exceeded 10%. However, it is still a challenge in TPVs that semiconductors are generally expensive and transparency is difficult to further enhance, particularly for device AVT exceeding 70%. In this work, we develop a set of fullerene-based heterojunctions to harvest the light. By utilizing the low-cost fullerene as the light-absorbing material and combining it with the transparent electrode, the fabricated TPV device can achieve an AVT of 72.1% with a PCE exceeding 1%. Notably, the device with an AVT of 82% is also successfully demonstrated. This study provides an effective approach for building low-cost and efficient TPV devices.
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Affiliation(s)
- Ruiqian Meng
- Key
Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang
Province, Research Center for Industries of the Future and School
of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China
- Institute
of Advanced Technology, Westlake Institute
for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Qianqing Jiang
- Key
Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang
Province, Research Center for Industries of the Future and School
of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China
- Institute
of Advanced Technology, Westlake Institute
for Advanced Study, Hangzhou, Zhejiang 310024, China
| | - Dianyi Liu
- Key
Laboratory of 3D Micro/Nano Fabrication and Characterization of Zhejiang
Province, Research Center for Industries of the Future and School
of Engineering, Westlake University, Hangzhou, Zhejiang 310030, China
- Institute
of Advanced Technology, Westlake Institute
for Advanced Study, Hangzhou, Zhejiang 310024, China
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2
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Eisner F, Foot G, Yan J, Azzouzi M, Georgiadou DG, Sit WY, Firdaus Y, Zhang G, Lin YH, Yip HL, Anthopoulos TD, Nelson J. Emissive Charge-Transfer States at Hybrid Inorganic/Organic Heterojunctions Enable Low Non-Radiative Recombination and High-Performance Photodetectors. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2104654. [PMID: 34611947 DOI: 10.1002/adma.202104654] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/17/2021] [Revised: 08/10/2021] [Indexed: 06/13/2023]
Abstract
Hybrid devices based on a heterojunction between inorganic and organic semiconductors have offered a means to combine the advantages of both classes of materials in optoelectronic devices, but, in practice, the performance of such devices has often been disappointing. Here, it is demonstrated that charge generation in hybrid inorganic-organic heterojunctions consisting of copper thiocyanate (CuSCN) and a variety of molecular acceptors (ITIC, IT-4F, Y6, PC70 BM, C70 , C60 ) proceeds via emissive charge-transfer (CT) states analogous to those found at all-organic heterojunctions. Importantly, contrary to what has been observed at previous organic-inorganic heterojunctions, the dissociation of the CT-exciton and subsequent charge separation is efficient, allowing the fabrication of planar photovoltaic devices with very low non-radiative voltage losses (0.21 ± 0.02 V). It is shown that such low non-radiative recombination enables the fabrication of simple and cost-effective near-IR (NIR) detectors with extremely low dark current (4 pA cm-2 ) and noise spectral density (3 fA Hz-1/2 ) at no external bias, leading to specific detectivities at NIR wavelengths of just under 1013 Jones, close to the performance of commercial silicon photodetectors. It is believed that this work demonstrates the possibility for hybrid heterojunctions to exploit the unique properties of both inorganic and organic semiconductors for high-performance opto-electronic devices.
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Affiliation(s)
- Flurin Eisner
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Georgie Foot
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Jun Yan
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Mohammed Azzouzi
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Dimitra G Georgiadou
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
- Centre for Electronics Frontiers, Electronics and Computer Science, University of Southampton, Southampton, SO17 1BJ, UK
| | - Wai Yu Sit
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Yuliar Firdaus
- Division of Physical Sciences and Engineering and KAUST Solar Centre, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
- Research Center for Electronics and Telecommunication, Indonesian Institute of Science, Jalan Sangkuriang Komplek LIPI Building 20 level 4, Bandung, 40135, Indonesia
| | - Guichuan Zhang
- Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou, 510640, P. R. China
| | - Yen-Hung Lin
- Department of Physics, University of Oxford, Parks Road, Oxford, OX1 3PU, UK
| | - Hin-Lap Yip
- Department of Materials Science and Engineering, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong
| | - Thomas D Anthopoulos
- Division of Physical Sciences and Engineering and KAUST Solar Centre, King Abdullah University of Science and Technology (KAUST), Thuwal, 23955-6900, Saudi Arabia
| | - Jenny Nelson
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
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3
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Liang JW, Firdaus Y, Kang CH, Min JW, Min JH, Al Ibrahim RH, Wehbe N, Hedhili MN, Kaltsas D, Tsetseris L, Lopatin S, Zheng S, Ng TK, Anthopoulos TD, Ooi BS. Chlorine-Infused Wide-Band Gap p-CuSCN/n-GaN Heterojunction Ultraviolet-Light Photodetectors. ACS APPLIED MATERIALS & INTERFACES 2022; 14:17889-17898. [PMID: 35404567 PMCID: PMC9026266 DOI: 10.1021/acsami.1c22075] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 11/14/2021] [Accepted: 03/15/2022] [Indexed: 06/14/2023]
Abstract
Copper thiocyanate (CuSCN) is a p-type semiconductor that exhibits hole-transport and wide-band gap (∼3.9 eV) characteristics. However, the conductivity of CuSCN is not sufficiently high, which limits its potential application in optoelectronic devices. Herein, CuSCN thin films were exposed to chlorine using a dry etching system to enhance their electrical properties, yielding a maximum hole concentration of 3 × 1018 cm-3. The p-type CuSCN layer was then deposited onto an n-type gallium nitride (GaN) layer to form a prototypical ultraviolet-based photodetector. X-ray photoelectron spectroscopy further demonstrated the interface electronic structures of the heterojunction, confirming a favorable alignment for holes and electrons transport. The ensuing p-CuSCN/n-GaN heterojunction photodetector exhibited a turn-on voltage of 2.3 V, a responsivity of 1.35 A/W at -1 V, and an external quantum efficiency of 5.14 × 102% under illumination with ultraviolet light (peak wavelength of 330 nm). The work opens a new pathway for making a plethora of hybrid optoelectronic devices of inorganic and organic nature by using p-type CuSCN as the hole injection layer.
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Affiliation(s)
- Jian-Wei Liang
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Yuliar Firdaus
- Physical
Science and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
- Currently
with Research Center for Electronics and Telecommunication, National Research and Innovation Agency, Jalan Sangkuriang Komplek LIPI Building
20 Level 4, Bandung 40135, Indonesia
| | - Chun Hong Kang
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Jung-Wook Min
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Jung-Hong Min
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Redha H. Al Ibrahim
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Nimer Wehbe
- Imaging
and Characterization Core Labs, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Mohamed Nejib Hedhili
- Imaging
and Characterization Core Labs, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Dimitrios Kaltsas
- Department
of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens GR-15780, Greece
| | - Leonidas Tsetseris
- Department
of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens GR-15780, Greece
| | - Sergei Lopatin
- Imaging
and Characterization Core Labs, King Abdullah
University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Shuiqin Zheng
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Tien Khee Ng
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Thomas D. Anthopoulos
- Physical
Science and Engineering Division (PSE), KAUST Solar Center (KSC), King Abdullah University of Science and Technology
(KAUST), Thuwal 23955-6900, Saudi Arabia
| | - Boon S. Ooi
- Photonics
Laboratory, Computer, Electrical and Mathematical Sciences and Engineering
Division (CEMSE), King Abdullah University
of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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4
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Mao C, Zhu W, Xiang Y, Zhu Y, Shen J, Liu X, Wu S, Cheung KMC, Yeung KWK. Enhanced Near-Infrared Photocatalytic Eradication of MRSA Biofilms and Osseointegration Using Oxide Perovskite-Based P-N Heterojunction. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2021; 8:e2002211. [PMID: 34145798 PMCID: PMC8336500 DOI: 10.1002/advs.202002211] [Citation(s) in RCA: 24] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/11/2020] [Revised: 03/13/2021] [Indexed: 05/07/2023]
Abstract
Methicillin-resistant Staphylococcus aureus (MRSA) biofilm infections after orthopedic implant increase the risk of failure and potentially cause amputation of limbs or life-threatening sepsis in severe cases. Additionally, satisfactory bone-implant integration is another important indicator of an ideal implant. Here, an antibiotic-free antibacterial nanofilm based on oxide perovskite-type calcium titanate (CTO)/fibrous red phosphorus (RP) on titanium implant surface (Ti-CTO/RP) in which the P-N heterojunction and internal electric field are established at the heterointerface, is designed. Near-infrared light-excited electron-hole pairs are effectively separated and transferred through the synergism of the internal electric field and band offset, which strongly boosts the photocatalytic eradication of MRSA biofilms by reactive oxygen species with an efficacy of 99.42% ± 0.22% in vivo. Additionally, the charge transfer endows the heterostructure with hyperthermia to assist biofilm eradication. Furthermore, CTO/RP nanofilm provides a superior biocompatible and osteoconductive platform that enables the proliferation and osteogenic differentiation of mesenchymal stem cells, thus contributing to the subsequent implant-to-bone osseointegration after eradicating MRSA biofilms.
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Affiliation(s)
- Congyang Mao
- Department of Orthopaedics and TraumatologyLi Ka Shing Faculty of MedicineThe University of Hong KongPokfulamHong Kong999077China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic TraumaDepartment of Orthopaedics and TraumatologyThe University of Hong Kong‐Shenzhen HospitalShenzhen518053China
| | - Weidong Zhu
- Biomedical Materials Engineering Research CenterCollaborative Innovation Center for Advanced Organic Chemical Materials Co‐constructed by the Province and MinistryHubei Key Laboratory of Polymer MaterialsMinistry‐of‐Education Key Laboratory for the Green Preparation and Application of Functional MaterialsSchool of Materials Science and EngineeringHubei UniversityWuhan430062China
| | - Yiming Xiang
- Department of Orthopaedics and TraumatologyLi Ka Shing Faculty of MedicineThe University of Hong KongPokfulamHong Kong999077China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic TraumaDepartment of Orthopaedics and TraumatologyThe University of Hong Kong‐Shenzhen HospitalShenzhen518053China
| | - Yizhou Zhu
- Department of Orthopaedics and TraumatologyLi Ka Shing Faculty of MedicineThe University of Hong KongPokfulamHong Kong999077China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic TraumaDepartment of Orthopaedics and TraumatologyThe University of Hong Kong‐Shenzhen HospitalShenzhen518053China
| | - Jie Shen
- Department of Orthopaedics and TraumatologyLi Ka Shing Faculty of MedicineThe University of Hong KongPokfulamHong Kong999077China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic TraumaDepartment of Orthopaedics and TraumatologyThe University of Hong Kong‐Shenzhen HospitalShenzhen518053China
| | - Xiangmei Liu
- Biomedical Materials Engineering Research CenterCollaborative Innovation Center for Advanced Organic Chemical Materials Co‐constructed by the Province and MinistryHubei Key Laboratory of Polymer MaterialsMinistry‐of‐Education Key Laboratory for the Green Preparation and Application of Functional MaterialsSchool of Materials Science and EngineeringHubei UniversityWuhan430062China
| | - Shuilin Wu
- School of Materials Science and Engineeringthe Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of ChinaTianjin UniversityTianjin300072China
| | - Kenneth M. C. Cheung
- Department of Orthopaedics and TraumatologyLi Ka Shing Faculty of MedicineThe University of Hong KongPokfulamHong Kong999077China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic TraumaDepartment of Orthopaedics and TraumatologyThe University of Hong Kong‐Shenzhen HospitalShenzhen518053China
| | - Kelvin Wai Kwok Yeung
- Department of Orthopaedics and TraumatologyLi Ka Shing Faculty of MedicineThe University of Hong KongPokfulamHong Kong999077China
- Shenzhen Key Laboratory for Innovative Technology in Orthopaedic TraumaDepartment of Orthopaedics and TraumatologyThe University of Hong Kong‐Shenzhen HospitalShenzhen518053China
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5
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Firdaus Y, Le Corre VM, Karuthedath S, Liu W, Markina A, Huang W, Chattopadhyay S, Nahid MM, Nugraha MI, Lin Y, Seitkhan A, Basu A, Zhang W, McCulloch I, Ade H, Labram J, Laquai F, Andrienko D, Koster LJA, Anthopoulos TD. Long-range exciton diffusion in molecular non-fullerene acceptors. Nat Commun 2020; 11:5220. [PMID: 33060574 PMCID: PMC7562871 DOI: 10.1038/s41467-020-19029-9] [Citation(s) in RCA: 88] [Impact Index Per Article: 22.0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/06/2020] [Accepted: 09/16/2020] [Indexed: 11/10/2022] Open
Abstract
The short exciton diffusion length associated with most classical organic semiconductors used in organic photovoltaics (5-20 nm) imposes severe limits on the maximum size of the donor and acceptor domains within the photoactive layer of the cell. Identifying materials that are able to transport excitons over longer distances can help advancing our understanding and lead to solar cells with higher efficiency. Here, we measure the exciton diffusion length in a wide range of nonfullerene acceptor molecules using two different experimental techniques based on photocurrent and ultrafast spectroscopy measurements. The acceptors exhibit balanced ambipolar charge transport and surprisingly long exciton diffusion lengths in the range of 20 to 47 nm. With the aid of quantum-chemical calculations, we are able to rationalize the exciton dynamics and draw basic chemical design rules, particularly on the importance of the end-group substituent on the crystal packing of nonfullerene acceptors.
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Affiliation(s)
- Yuliar Firdaus
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Vincent M Le Corre
- University of Groningen, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, The Netherlands
| | - Safakath Karuthedath
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Wenlan Liu
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Anastasia Markina
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - Wentao Huang
- Department of Physics, Imperial College London, South Kensington, London, SW7 2AZ, UK
| | - Shirsopratim Chattopadhyay
- Electrical Engineering and Computer Science, Oregon State University, 3103 Kelley Engineering Center, Corvallis, OR, 97331, USA
| | - Masrur Morshed Nahid
- Department of Physics, Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - Mohamad I Nugraha
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Yuanbao Lin
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Akmaral Seitkhan
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Aniruddha Basu
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Weimin Zhang
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Iain McCulloch
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Harald Ade
- Department of Physics, Organic and Carbon Electronics Laboratories (ORaCEL), North Carolina State University, Raleigh, NC, 27695, USA
| | - John Labram
- Electrical Engineering and Computer Science, Oregon State University, 3103 Kelley Engineering Center, Corvallis, OR, 97331, USA
| | - Frédéric Laquai
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia
| | - Denis Andrienko
- Max Planck Institute for Polymer Research, Ackermannweg 10, 55128, Mainz, Germany
| | - L Jan Anton Koster
- University of Groningen, Zernike Institute for Advanced Materials, Nijenborgh 4, 9747 AG, Groningen, The Netherlands.
| | - Thomas D Anthopoulos
- King Abdullah University of Science and Technology (KAUST), KAUST Solar Center (KSC), Physical Sciences and Engineering Division (PSE), Material Science and Engineering Program (MSE), 23955-6900, Thuwal, Kingdom of Saudi Arabia.
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6
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Abstract
Semiconductor nanowires have attracted extensive interest as one of the best-defined classes of nanoscale building blocks for the bottom-up assembly of functional electronic and optoelectronic devices over the past two decades. The article provides a comprehensive review of the continuing efforts in exploring semiconductor nanowires for the assembly of functional nanoscale electronics and macroelectronics. Specifically, we start with a brief overview of the synthetic control of various semiconductor nanowires and nanowire heterostructures with precisely controlled physical dimension, chemical composition, heterostructure interface, and electronic properties to define the material foundation for nanowire electronics. We then summarize a series of assembly strategies developed for creating well-ordered nanowire arrays with controlled spatial position, orientation, and density, which are essential for constructing increasingly complex electronic devices and circuits from synthetic semiconductor nanowires. Next, we review the fundamental electronic properties and various single nanowire transistor concepts. Combining the designable electronic properties and controllable assembly approaches, we then discuss a series of nanoscale devices and integrated circuits assembled from nanowire building blocks, as well as a unique design of solution-processable nanowire thin-film transistors for high-performance large-area flexible electronics. Last, we conclude with a brief perspective on the standing challenges and future opportunities.
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Affiliation(s)
- Chuancheng Jia
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Zhaoyang Lin
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Yu Huang
- Department of Materials Science and Engineering , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
| | - Xiangfeng Duan
- Department of Chemistry and Biochemistry , University of California, Los Angeles , Los Angeles , California 90095 , United States.,California NanoSystems Institute , University of California, Los Angeles , Los Angeles , California 90095 , United States
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