Accessing MHz Operation at 2 V with Field-Effect Transistors Based on Printed Polymers on Plastic

High-Frequency Operation of Vertical Organic Field-Effect Transistors

The high-frequency and low-voltage operation of organic thin-film transistors (OTFTs) is a key requirement for the commercial success of flexible electronics. Significant progress has been achieved in this regard by several research groups highlighting the potential of OTFTs to operate at several tens or even above 100 MHz. However, technology maturity, including scalability, integrability, and device reliability, is another crucial point for the semiconductor industry to bring OTFT-based flexible electronics into mass production. These requirements are often not met by high-frequency OTFTs reported in the literature as unconventional processes, such as shadow-mask patterning or alignment with unrealistic tolerances for production, are used. Here, ultra-short channel vertical organic field-effect transistors (VOFETs) with a unity current gain cut-off frequency (f_T ) up to 43.2 MHz (or 4.4 MHz V^-1 ) operating below 10 V are shown. Using state-of-the-art manufacturing techniques such as photolithography with reliable fabrication procedures, the integration of such devices down to the size of only 12 × 6 µm2 is shown, which is important for the adaption of this technology in high-density circuits (e.g., display driving). The intrinsic channel transconductance is analyzed and demonstrates that the frequencies up to 430 MHz can be reached if the parasitic electrode overlap is minimized.

Nanoscale flexible organic thin-film transistors

Direct-write electron-beam lithography has been used to fabricate low-voltage p-channel and n-channel organic thin-film transistors with channel lengths as small as 200 nm and gate-to-contact overlaps as small as 100 nm on glass and on flexible transparent polymeric substrates. The p-channel transistors have on/off current ratios as large as 4 × 109 and subthreshold swings as small as 70 mV/decade, and the n-channel transistors have on/off ratios up to 108 and subthreshold swings as low as 80 mV/decade. These are the largest on/off current ratios reported to date for nanoscale organic transistors. Inverters based on two p-channel transistors with a channel length of 200 nm and gate-to-contact overlaps of 100 nm display characteristic switching-delay time constants between 80 and 40 ns at supply voltages between 1 and 2 V, corresponding to a supply voltage-normalized frequency of about 6 MHz/V. This is the highest voltage-normalized dynamic performance reported to date for organic transistors fabricated by maskless lithography.

A Critical Outlook for the Pursuit of Lower Contact Resistance in Organic Transistors

To take full advantage of recent and anticipated improvements in the performance of organic semiconductors employed in organic transistors, the high contact resistance arising at the interfaces between the organic semiconductor and the source and drain contacts must be reduced significantly. To date, only a small portion of the accumulated research on organic thin-film transistors (TFTs) has reported channel-width-normalized contact resistances below 100 Ωcm, well above what is regularly demonstrated in transistors based on inorganic semiconductors. A closer look at these cases and the relevant literature strongly suggests that the most significant factor leading to the lowest contact resistances in organic TFTs so far has been the control of the thin-film morphology of the organic semiconductor. By contrast, approaches aimed at increasing the charge-carrier density and/or reducing the intrinsic Schottky barrier height have so far played a relatively minor role in achieving the lowest contact resistances. Herein, the possible explanations for these observations are explored, including the prevalence of Fermi-level pinning and the difficulties in forming optimized interfaces with organic semiconductors. An overview of the research on these topics is provided, and potential device-engineering solutions are discussed based on recent advancements in the theoretical and experimental work on both organic and inorganic semiconductors.

Organic Electronics Picks Up the Pace: Mask-Less, Solution Processed Organic Transistors Operating at 160 MHz

Organic printed electronics has proven its potential as an essential enabler for applications related to healthcare, entertainment, energy, and distributed intelligent objects. The possibility of exploiting solution-based and direct-writing production schemes further boosts the benefits offered by such technology, facilitating the implementation of cheap, conformable, bio-compatible electronic applications. The result shown in this work challenges the widespread assumption that such class of electronic devices is relegated to low-frequency operation, owing to the limited charge mobility of the materials and to the low spatial resolution achievable with conventional printing techniques. Here, it is shown that solution-processed and direct-written organic field-effect transistors can be carefully designed and fabricated so to achieve a maximum transition frequency of 160 MHz, unlocking an operational range that was not available before for organics. Such range was believed to be only accessible with more performing classes of semiconductor materials and/or more expensive fabrication schemes. The present achievement opens a route for cost- and energy-efficient manufacturability of flexible and conformable electronics with wireless-communication capabilities.

High-performance polymer field-effect transistors: from the perspective of multi-level microstructures

The multi-level microstructure of conjugated polymers is the most critical parameter determining the charge transport property in field-effect transistors (FETs). However, controlling the hierarchical microstructures and the structural evolution remains a significant challenge. In this perspective, we discuss the key aspects of multi-level microstructures of conjugated polymers towards high-performance FETs. We highlight the recent progress in the molecular structures, solution-state aggregation, and polymer crystal structures, representing the multi-level microstructures of conjugated polymers. By tuning polymer hierarchical microstructures, we attempt to provide several guidelines for developing high-performance polymer FETs and polymer electronics.

Coherent Electron Transport in Air-Stable, Printed Single-Crystal Organic Semiconductor and Application to Megahertz Transistors

Organic semiconductors (OSCs) have attracted growing attention for optoelectronic applications such as field-effect transistors (FETs), and coherent (or band-like) carrier transport properties in OSC single crystals (SCs) have been of interest as they can lead to high carrier mobilities. Recently, such p-type OSC SCs compatible with a printing technology have been used to achieve high-speed FETs; therefore, developments of n-type counterparts may be promising for realizing high-speed complementary organic circuits. Herein, coherent electron transport properties in a printed SC of a state-of-the-art, air-stable n-type OSC, PhC₂ -BQQDI, by means of variable-temperature gated Hall effect measurements and X-ray single-crystal diffraction analyses in conjunction with band structure calculations, are reported. Furthermore, the SC FET is tested for high-speed operations, which obtains a cutoff frequency of 4.3 MHz at an operation voltage of 20 V in air. Thus, PhC₂ -BQQDI is shown as a new candidate for practical applications of SC-based, organic complementary devices.

A 13.56 MHz Rectifier Based on Fully Inkjet Printed Organic Diodes

The increasing diffusion of portable and wearable technologies results in a growing interest in electronic devices having features such as flexibility, lightness-in-weight, transparency, and wireless operation. Organic electronics is proposed as a potential candidate to fulfill such needs, in particular targeting pervasive radio-frequency (RF) applications. Still, limitations in terms of device performances at RF, particularly severe when large-area and scalable fabrication techniques are employed, have largely precluded the achievement of such an appealing scenario. In this work, the rectification of an electromagnetic wave at 13.56 MHz with a fully inkjet printed polymer diode is demonstrated. The rectifier, a key enabling component of future pervasive wireless systems, is fabricated through scalable large-area methods on plastic. To provide a proof-of-principle demonstration of its future applicability, its adoption in powering a printed integrated polymer circuit is presented. The possibility of harvesting electrical power from RF waves and delivering it to a cheap flexible substrate through a simple printed circuitry paves the way to a plethora of appealing distributed electronic applications.

Percolation-Limited Dual Charge Transport in Vertical p-n Heterojunction Schottky Barrier Transistors

Solution-processed, high-speed, and polarity-selective organic vertical Schottky barrier (SB) transistors and logic gates are presented. The organic layer, which is a bulk heterojunction (BHJ) composed of PBDB-T and PC₇₁BM, is employed to simultaneously realize vertical electron and hole transports through the separate p-channel and n-channel. The gate-modulated graphene work functions enable broad modulation of SB heights at both the graphene-PBDB-T and graphene-PC₇₁BM heterointerfaces. Interestingly, the fine-tuned energy-level alignment enables an exclusive injection of holes or electrons unlike conventional BHJ-based ambipolar transistors, leading to a clear transition between p-channel and n-channel single-carrier-like transistor characteristics. Furthermore, the improved percolation-limited dual charge transport in vertical architecture results in high charge carrier density and high-speed on-off switching characteristics, providing a high on-off current ratio exceeding 10⁵ and an operation speed of 100 kHz. Solution-based on-substrate fabrications of low-power complementary logic gates such as NOT, NOR, and NAND are also successfully performed.

Flexible low-voltage high-frequency organic thin-film transistors

The primary driver for the development of organic thin-film transistors (TFTs) over the past few decades has been the prospect of electronics applications on unconventional substrates requiring low-temperature processing. A key requirement for many such applications is high-frequency switching or amplification at the low operating voltages provided by lithium-ion batteries (~3 V). To date, however, most organic-TFT technologies show limited dynamic performance unless high operating voltages are applied to mitigate high contact resistances and large parasitic capacitances. Here, we present flexible low-voltage organic TFTs with record static and dynamic performance, including contact resistance as small as 10 Ω·cm, on/off current ratios as large as 1010, subthreshold swing as small as 59 mV/decade, signal delays below 80 ns in inverters and ring oscillators, and transit frequencies as high as 21 MHz, all while using an inverted coplanar TFT structure that can be readily adapted to industry-standard lithographic techniques.

The Influence of Laser Sintering Modes on the Conductivity and Microstructure of Silver Nanoparticle Arrays Formed by Dry Aerosol Printing

The demand for the development of local laser sintering of nanoparticle arrays is explained by the expanding needs for printed electronics for functional microstructure formation, on heat-sensitive substrates in particular. This work is based on the research into the sintering of arrays of silver nanoparticles synthesized in a spark discharge and deposited on a substrate by focused aerosol flow. The sintering was done by continuous and pulsed lasers with wavelengths 527, 980 and 1054 nm. Sintered samples were studied by measuring the resistivity, cross-section profile area and microstructure features. The highest average conductivity, equal to the half of the bulk silver conductivity, was achieved when sintering by continuous radiation with a wavelength 980 nm. The results showed that when using pulsed radiation the direct heating of nanoparticles in the sample surface layer dominates with the formation of a pore-free conductive layer of around 0.5 μm thick and crystallite of 70–80 nm size. It was found that laser sintering by radiation with a wavelength 527 nm required an order of magnitude lower specific energy costs as compared to the longwave laser radiation. The high energy efficiency of laser sintering is explained by special conditions for radiation absorption at plasmon resonance.