Printed Diodes: Materials Processing, Fabrication, and Applications

Challenges in the Synthesis and Processing of Hydrosilanes as Precursors for Silicon Deposition

Hydrosilanes are highly attractive compounds, which can be processed as liquids with printing technology to amorphous silicon films on nearly any solid substrate. The silicon layers can be processed for electronic devices like transistors or thin-film solar cells. The endothermic character of hydrosilanes with their positive enthalpies of formation results in favorable properties for processing. The larger the molecules, the lower their decomposition temperature and the higher their photoactivity. Cyclic hydrosilanes such as cyclopentasilane and cyclohexasilane can be easily deposited. The branched neopentasilane is more difficult to deposit but yields better-quality films after processing. The key challenge is the complex synthesis of the precursors and the hydrosilanes. The available preparative methods are presented in this review and their advantages and disadvantages are evaluated. The following synthesis methods are presented and discussed in this article: Wurtz coupling and other reductive coupling processes, dehydrogenative coupling of silanes, plasma synthesis of chlorinated polysilanes, amine- or chloride-induced disproportionations, and transformation of monosilane to higher silanes. Plasma synthesis is already carried out today as a continuous industrial process. The most effective synthesis methods in the laboratory are currently amine- and chloride-induced disproportionations. There is a great need to further optimize the syntheses of hydrosilanes and to develop new simple synthesis variants.

A Holistic Review of C = C Crosslinkable Conjugated Molecules in Solution-Processed Organic Electronics: Insights into Stability, Processibility, and Mechanical Properties

Solution-processable organic conjugated molecules (OCMs) consist of a series of aromatic units linked by σ-bonds, which present a relatively freedom intramolecular motion and intermolecular re-arrangement under external stimulation. The cross-linked strategy provides an effective platform to obtain OCMs network, which allows for outstanding optoelectronic, excellent physicochemical properties, and substantial improvement in device fabrication. An unsaturated double carbon-carbon bond (C = C) is universal segment to construct crosslinkable OCMs. In this review, the authors will set C = C cross-linkable units as an example to summarize the development of cross-linkable OCMs for solution-processable optoelectronic applications. First, this review provides a comprehensive overview of the distinctive chemical, physical, and optoelectronic properties arising from the cross-linking strategies employed in OCMs. Second, the methods for probing the C = C cross-linking reaction are also emphasized based on the perturbations of chemical structure and physicochemical property. Third, a series of model C = C cross-linkable units, including styrene, trifluoroethylene, and unsaturated acid ester, are further discussed to design and prepare novel OCMs. Furthermore, a concise overview of the optoelectronic applications associated with this approach is presented, including light-emitting diodes (LEDs), solar cells (SCs), and field-effect transistors (FETs). Lastly, the authors offer a concluding perspective and outlook for the improvement of OCMs and their optoelectronic application via the cross-linking strategy.

Suppression of the Coffee Ring Effect in a Single Solvent-Based Silicon Nanoparticle Ink

Silicon (Si) is made printable by dispersing Si nanoparticles in a single organic solvent. Viscoelastic properties of the prepared inks as well as the uniformity of inkjet-printed thin films are investigated in dependence on the Si volume fraction. It has been demonstrated that no ink additives are needed to completely suppress the occurrence of the coffee ring effect. This is obtained by increasing the ink's volume fraction to induce gelation in order to generate elasticity. The printability of our inks is investigated in terms of Weber, Reynolds, and Ohnesorge numbers and found to be maintained even at high particle loads due to shear-thinning viscosity behavior. When printed onto tungsten (W) substrates, Si inks with ϕ(Si) = 0.4% and ϕ(Si) = 2.1% leave a ring stain after drying, whereas coffee rings are absent for inks with ϕ(Si) = 3.0% and above. The reason for this is a significant ink elasticity achieved by the buildup of a gel network for higher particle loads, which leads to thixotropy-like properties. These are low viscosity for printability and elevated elasticity during ink drying, made possible by a breakup of the gel network during drop formation in conjunction with a rapid network reformation after deposition.

Highly Ordered Small Molecule Organic Semiconductor Thin-Films Enabling Complex, High-Performance Multi-Junction Devices

Organic semiconductors have opened up many new electronic applications, enabled by properties like flexibility, low-cost manufacturing, and biocompatibility, as well as improved ecological sustainability due to low energy use during manufacturing. Most current devices are made of highly disordered thin-films, leading to poor transport properties and, ultimately, reduced device performance as well. Here, we discuss techniques to prepare highly ordered thin-films of organic semiconductors to realize fast and highly efficient devices as well as novel device types. We discuss the various methods that can be implemented to achieve such highly ordered layers compatible with standard semiconductor manufacturing processes and suitable for complex devices. A special focus is put on approaches utilizing thermal treatment of amorphous layers of small molecules to create crystalline thin-films. This technique has first been demonstrated for rubrene─an organic semiconductor with excellent transport properties─and extended to some other molecular structures. We discuss recent experiments that show that these highly ordered layers show excellent lateral and vertical mobilities and can be electrically doped to achieve high n- and p-type conductivities. With these achievements, it is possible to integrate these highly ordered layers into specialized devices, such as high-frequency diodes or completely new device principles for organics, e.g., bipolar transistors.

Multiband Microstrip Rectenna Using ZnO-Based Planar Schottky Diode for RF Energy Harvesting Applications

This paper presents a single-substrate microstrip rectenna for dedicated radio frequency energy harvesting applications. The proposed configuration of the rectenna circuit is composed of a clipart moon-shaped cut in order to improve the antenna impedance bandwidth. The curvature of the ground plane is modified with a simple U-shaped slot etched into it to improve the antenna bandwidth by changing the current distribution; therefore, this affects the inductance and capacitance embedded into the ground plane. The linear polarized ultra-wide bandwidth (UWB) antenna is achieved by using 50 Ω microstrip line and build on Roger 3003 substrate with an area of 32 × 31 mm². The operating bandwidth of the proposed UWB antenna extended from 3 GHz to 25 GHz at -6 dB reflection coefficient (VSWR ≤ 3) and extended from both 3.5 to 12 GHz, from 16 up to 22 GHz at -10 dB impedance bandwidth (VSWR ≤ 2). This was used to harvest RF energy from most of the wireless communication bands. In addition, the proposed antenna integrates with the rectifier circuit to create the rectenna system. Moreover, to implement the shunt half-wave rectifier (SHWR) circuit, a planar Ag/ZnO Schottky diode uses a diode area of 1 × 1 mm². The proposed diode is investigated and designed, and its S-parameter is measured for use in the circuit rectifier design. The proposed rectifier has a total area of 40 × 9 mm² and operates at different resonant frequencies, namely 3.5 GHz, 6 GHz, 8 GHz, 10 GHz and 18 GHz, with a good agreement between simulation and measurement. The maximum measured output DC voltage of the rectenna circuit is 600 mV with a maximum measured efficiency of 25% at 3.5 GHz, with an input power level of 0 dBm at a rectifier load of 300 Ω.

Solution Processed Schottky Diodes Enabled by Silicon Carbide Nanowires for Harsh Environment Applications

Silicon carbide nanowires (SiC NWs) exhibit promising features to allow solution-processable electronics to be deployed in harsh environments. By utilizing a nanoscale form of SiC, we were able to disperse the material into liquid solvents, while maintaining the resilience of bulk SiC. This letter reports the fabrication of SiC NW Schottky diodes. Each diode consisted of just one nanowire with an approximate diameter of 160 nm. In addition to analyzing the diode performance, the effects of elevated temperatures and proton irradiation on the current-voltage characteristics of SiC NW Schottky diodes were also examined. The device could maintain similar values for ideality factor, barrier height, and effective Richardson constant upon proton irradiation with a fluence of 10¹⁶ ion/cm² at 873 K. As a result, these metrics have clearly demonstrated the high-temperature tolerance and irradiation resistance of SiC NWs, ultimately indicating that they may provide utility in allowing solution-processable electronics in harsh environments.

Recent advances in inkjet-printing technologies for flexible/wearable electronics

The rapid development of flexible/wearable electronics requires novel fabricating strategies. Among the state-of-the-art techniques, inkjet printing has aroused considerable interest due to the possibility of large-scale fabricating flexible electronic devices with good reliability, high time efficiency, a low manufacturing cost, and so on. In this review, based on the working principle, recent advances in the inkjet printing technology in the field of flexible/wearable electronics are summarized, including flexible supercapacitors, transistors, sensors, thermoelectric generators, wearable fabric, and for radio frequency identification. In addition, some current challenges and future opportunities in this area are also addressed. We hope this review article can give positive suggestions to the researchers in the area of flexible electronics.

Large-Area Blade-Coated Deep-Blue Polymer Light-Emitting Diodes with a Narrowband and Uniform Emission

Large-area polymer light-emitting diodes (PLEDs) manufactured by printing are required for flat-panel lighting and displays. Nevertheless, it remains challenging to fabricate large-area and stable deep-blue PLEDs with narrowband emission due to the difficulties in precisely tuning film uniformity and obtaining single-exciton emission. Herein, efficient and stable large-area deep-blue PLEDs with narrowband emission are prepared from encapsulated polydiarylfluorene. Encapsulated polydiarylfluorenes presented an efficient and stable deep-blue emission (peak: 439 nm; full width at half maximum (FWHM): 39 nm) in the solid state due to their single-chain emission behavior without inter-backbone chain aggregation. Large-area uniform blade-coated films (16 cm2 ) are also fabricated with excellent smoothness and morphology. Benefitting from efficient emission and excellent printed capacity, the blade-coated PLEDs with a device area of 9 mm2 realized uniform deep-blue emission (FWHM: 38 nm; CIE: 0.153, 0.067), with a corresponding maximum external quantum efficiency and the brightness comparable to those of devices based on spin-coated films. Finally, considering the essential role of deep-blue LEDs, a preliminary patterned PLED array with a pixel size of 800 × 1000 µm2 and a monochrome display is fabricated, highlighting potential full-color display applications.

2.11 - Accurate characterization of indoor photovoltaic performance

Ambient energy harvesting has great potential to contribute to sustainable development and address growing environmental challenges. Converting waste energy from energy-intensive processes and systems (e.g. combustion engines and furnaces) is crucial to reducing their environmental impact and achieving net-zero emissions. Compact energy harvesters will also be key to powering the exponentially growing smart devices ecosystem that is part of the Internet of Things, thus enabling futuristic applications that can improve our quality of life (e.g. smart homes, smart cities, smart manufacturing, and smart healthcare). To achieve these goals, innovative materials are needed to efficiently convert ambient energy into electricity through various physical mechanisms, such as the photovoltaic effect, thermoelectricity, piezoelectricity, triboelectricity, and radiofrequency wireless power transfer. By bringing together the perspectives of experts in various types of energy harvesting materials, this Roadmap provides extensive insights into recent advances and present challenges in the field. Additionally, the Roadmap analyses the key performance metrics of these technologies in relation to their ultimate energy conversion limits. Building on these insights, the Roadmap outlines promising directions for future research to fully harness the potential of energy harvesting materials for green energy anytime, anywhere.

Molecular Dynamics and Structure of Poly(Methyl Methacrylate) Chains Grafted from Barium Titanate Nanoparticles

Core−shell nanocomposites comprising barium titanate, BaTiO₃ (BTO), and poly(methyl methacrylate) (PMMA) chains grafted from its surface with varied grafting densities were prepared. BTO nanocrystals are high-k inorganic materials, and the obtained nanocomposites exhibit enhanced dielectric permittivity, as compared to neat PMMA, and a relatively low level of loss tangent in a wide range of frequencies. The impact of the molecular dynamics, structure, and interactions of the BTO surface on the polymer chains was investigated. The nanocomposites were characterized by broadband dielectric and vibrational spectroscopies (IR and Raman), transmission electron microscopy, differential scanning calorimetry, and nuclear magnetic resonance. The presence of ceramic nanoparticles in core–shell composites slowed down the segmental dynamic of PMMA chains, increased glass transition temperature, and concurrently increased the thermal stability of the organic part. It was also evidenced that, in addition to segmental dynamics, local β relaxation was affected. The grafting density influenced the self-organization and interactions within the PMMA phase, affecting the organization on a smaller size scale of polymeric chains. This was explained by the interaction of the exposed surface of nanoparticles with polymer chains.

14 GHz Schottky Diodes Using a p-Doped Organic Polymer

The low carrier mobility of organic semiconductors and the high parasitic resistance and capacitance often encountered in conventional organic Schottky diodes hinder their deployment in emerging radio frequency (RF) electronics. Here, these limitations are overcome by combining self-aligned asymmetric nanogap electrodes (≈25 nm) produced by adhesion lithography, with a high mobility organic semiconductor, and RF Schottky diodes able to operate in the 5G frequency spectrum are demonstrated. C₁₆ IDT-BT is used, as the high hole mobility polymer, and the impact of p-doping on the diode performance is studied. Pristine C₁₆ IDT-BT-based diodes exhibit maximum intrinsic and extrinsic cutoff frequencies (f_C ) of >100 and 6 GHz, respectively. This extraordinary performance is attributed to the planar nature of the nanogap channel and the diode's small junction capacitance (<2 pF). Doping of C₁₆ IDT-BT with the molecular p-dopant C₆₀ F₄₈ improves the diode's performance further by reducing the series resistance resulting to intrinsic and extrinsic f_C of >100 and ≈14 GHz respectively, while the DC output voltage of an RF rectifier circuit increases by a tenfold. Our work highlights the importance of the planar nanogap architecture and paves the way for the use of organic Schottky diodes in large-area RF electronics of the future.

Challenges, Prospects, and Emerging Applications of Inkjet-Printed Electronics: A Chemist's Point of View

Driven by the development of new functional inks, inkjet-printed electronics has achieved several milestones upon moving from the integration of simple electronic elements (e.g., temperature and pressure sensors, RFID antennas, etc.) to high-tech applications (e.g. in optoelectronics, energy storage and harvesting, medical diagnosis). Currently, inkjet printing techniques are limited by spatial resolution higher than several micrometers, which sets a redhibitorythreshold for miniaturization and for many applications that require the controlled organization of constituents at the nanometer scale. In this Review, we present the physico-chemical concepts and the equipment constraints underpinning the resolution limit of inkjet printing and describe the contributions from molecular, supramolecular, and nanomaterials-based approaches for their circumvention. Based on these considerations, we propose future trajectories for improving inkjet-printing resolution that will be driven and supported by breakthroughs coming from chemistry. Please check all text carefully as extensive language polishing was necessary. Title ok? Yes.

An Automated Room Temperature Flip-Chip Mounting Process for Hybrid Printed Electronics

Printing technology and mounting technology enable the novel field of hybrid printed electronics. To establish a hybrid printed system, one challenge is that the applied mounting process meets the requirements of functional inks and substrates. One of the most common requirements is low process temperature. Many functional inks and substrates cannot withstand the high temperatures required by traditional mounting processes. In this work, a standardized interconnection and an automated bump-less flip-chip mounting process using a room temperature curing conductive adhesive are realised. With the proposed process, the conductive adhesive selected for the standardized interconnection can be dispensed uniformly, despite its increase of viscosity already during pot time. Electrical and mechanical performance of the interconnection are characterized by four terminal resistance measurement and shear test. The herein proposed automated process allows for fabrication of hybrid printed devices in larger batch sizes than manual assembly processes used beforehand and thus, more comprehensive evaluation of device parameters. This is successfully demonstrated in a first application, a novel hybrid printed security device. The room temperature mounting process eliminates any potentially damaging thermal influence on the performance of the printed circuits that might result from other assembly techniques like soldering.

Lateral Fully Organic P-N Diodes Created in a Single Donor-Acceptor Copolymer

P-N junctions exist in many solid-state organic devices, such as light-emitting diodes, solar cells, and thermoelectric devices. Creating P-N junctions by bulk chemical doping in a single organic material (like silicon doped by boron and phosphorus) may capitalize the vast scientific and technological groundwork established in the inorganic semiconducting field. However, high-performance single-organic-material P-N junctions are seldom reported, because the diffusion of the dopant counterions often leads to transient rectification properties. Herein, a new type of lateral fully organic diodes created in single donor-acceptor (D-A) copolymer films with only one P-type dopant is reported. The achieved lateral devices exhibit high current densities of ≈3.83 A cm^-2 and a high rectification ratio of ≈2100, which are beyond the requirements for high-frequency identification tags. The P- to N-type polarity switching mechanism is proposed after spectroscopic and structural tests. Decent stability of the organic diode is obtained, which is due to the long channel length and low diffusion speed of the large size of dopants. This work opens the opportunities to create P-N junctions in ways of silicon-based inorganic semiconductors and promises new opportunities for integrating organic materials for flexible and printable organic devices.

Describing chain-like assembly of ethoxygroup-functionalized organic molecules on Au(111) using high-throughput simulations

Due to the low corrugation of the Au(111) surface, 1,4-bis(phenylethynyl)-2,5-bis(ethoxy)benzene (PEEB) molecules can form quasi interlocked lateral patterns, which are observed in scanning tunneling microscopy experiments at low temperatures. We demonstrate a multi-dimensional clustering approach to quantify the anisotropic pair-wise interaction of molecules and explain these patterns. We perform high-throughput calculations to evaluate an energy function, which incorporates the adsorption energy of single PEEB molecules on the metal surface and the intermolecular interaction energy of a pair of PEEB molecules. The analysis of the energy function reveals, that, depending on coverage density, specific types of pattern are preferred which can potentially be exploited to form one-dimensional molecular wires on Au(111).

Dual Surface Architectonics for Directed Self-Assembly of Ultrahigh-Resolution Electronics

The directed self-assembly of electronic circuits using functional metallic inks has attracted intensive attention because of its high compatibility with extensive applications ranging from soft printed circuits to wearable devices. However, the typical resolution of conventional self-assembly technologies is not sufficient for practical applications in the rapidly evolving additively manufactured electronics (AMEs) market. Herein, an ultrahigh-resolution self-assembly strategy is reported based on a dual-surface-architectonics (DSA) process. Inspired by the Tokay gecko, the approach is to endow submicrometer-scale surface regions with strong adhesion force toward metallic inks via a series of photoirradiation and chemical polarization treatments. The prepared DSA surface enables the directed self-assembly of electronic circuits with unprecedented 600 nm resolution, suppresses the coffee-ring effect, and results in a reliable conductivity of 14.1 ± 0.6 µΩ cm. Furthermore, the DSA process enables the layer-by-layer fabrication of fully printed organic thin-film transistors with a short channel length of 1 µm, which results in a large on-off ratio of 10⁶ and a high field-effect mobility of 0.5 cm²  V^-1  s^-1 .

Recent advances in techniques for fabrication and characterization of nanogap biosensors: A review

Nanogap biosensors have fascinated researchers due to their excellent electrical properties. Nanogap biosensors comprise three arrays of electrodes that form nanometer-size gaps. The sensing gaps have become the major building blocks of several sensing applications, including bio- and chemosensors. One of the advantages of nanogap biosensors is that they can be fabricated in nanoscale size for various downstream applications. Several studies have been conducted on nanogap biosensors, and nanogap biosensors exhibit potential material properties. The possibilities of combining these unique properties with a nanoscale-gapped device and electrical detection systems allow excellent and potential prospects in biomolecular detection. However, their fabrication is challenging as the gap is becoming smaller. It includes high-cost, low-yield, and surface phenomena to move a step closer to the routine fabrications. This review summarizes different feasible techniques in the fabrication of nanogap electrodes, such as preparation by self-assembly with both conventional and nonconventional approaches. This review also presents a comprehensive analysis of the fabrication, potential applications, history, and the current status of nanogap biosensors with a special focus on nanogap-mediated bio- and chemical sonsors.

Depth-dependent EBIC microscopy of radial-junction Si micropillar arrays

Recent advances in fabrication have enabled radial-junction architectures for cost-effective and high-performance optoelectronic devices. Unlike a planar PN junction, a radial-junction geometry maximizes the optical interaction in the three-dimensional (3D) structures, while effectively extracting the generated carriers via the conformal PN junction. In this paper, we report characterizations of radial PN junctions that consist of p-type Si micropillars created by deep reactive-ion etching (DRIE) and an n-type layer formed by phosphorus gas diffusion. We use electron-beam induced current (EBIC) microscopy to access the 3D junction profile from the sidewall of the pillars. Our EBIC images reveal uniform PN junctions conformally constructed on the 3D pillar array. Based on Monte-Carlo simulations and EBIC modeling, we estimate local carrier separation/collection efficiency that reflects the quality of the PN junction. We find the EBIC efficiency of the pillar array increases with the incident electron beam energy, consistent with the EBIC behaviors observed in a high-quality planar PN junction. The magnitude of the EBIC efficiency of our pillar array is about 70% at 10 kV, slightly lower than that of the planar device (≈ 81%). We suggest that this reduction could be attributed to the unpassivated pillar surface and the unintended recombination centers in the pillar cores introduced during the DRIE processes. Our results support that the depth-dependent EBIC approach is ideally suitable for evaluating PN junctions formed on micro/nanostructured semiconductors with various geometry.

A 13.56 MHz Rectifier Based on Fully Inkjet Printed Organic Diodes

The increasing diffusion of portable and wearable technologies results in a growing interest in electronic devices having features such as flexibility, lightness-in-weight, transparency, and wireless operation. Organic electronics is proposed as a potential candidate to fulfill such needs, in particular targeting pervasive radio-frequency (RF) applications. Still, limitations in terms of device performances at RF, particularly severe when large-area and scalable fabrication techniques are employed, have largely precluded the achievement of such an appealing scenario. In this work, the rectification of an electromagnetic wave at 13.56 MHz with a fully inkjet printed polymer diode is demonstrated. The rectifier, a key enabling component of future pervasive wireless systems, is fabricated through scalable large-area methods on plastic. To provide a proof-of-principle demonstration of its future applicability, its adoption in powering a printed integrated polymer circuit is presented. The possibility of harvesting electrical power from RF waves and delivering it to a cheap flexible substrate through a simple printed circuitry paves the way to a plethora of appealing distributed electronic applications.

Role of Molecular Orbital Energy Levels in OLED Performance

Abundant molecules enable countless combinations of device architecture that might achieve the desirable high efficiency from organic light-emitting diodes (OLEDs). Due to the relatively high cost of OLED materials and facilities, simulation approaches have become a must in further advancing the field faster and saver. We have demonstrated here the use of state-of-art simulation approaches to investigate the effect of molecular orbital energy levels on the recombination of excitons in OLED devices. The devices studied are composed of 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) as hole transporting material (HTM), 4,4'-Bis(9-carbazolyl)-1,1'-biphenyl (CBP) as host, 2,2',2"-(1,3,5-benzinetriyl)-tris(1-phenyl-1-H-benzimidazole) (TPBi) or bathophenanthroline (Bphen) as electron transporting materials. The outcomes reveal that exciton recombination highly sensitive to the energy-level alignment, injection barriers, and charge mobilities. A low energy-barrier (<0.4 eV) between the layers is the key to yield high recombination. The lowest unoccupied molecular orbital (LUMO) levels of the organic layers have played a more pivotal role in governing the recombination dynamics than the highest occupied molecular orbital (HOMO) level do. Furthermore, the Bphen based device shows high exciton recombination across the emissive layer, which is >10⁶ times greater than that in the TPBi based device. The high carrier mobility of Bphen whose electron mobility is 5.2 × 10^-4 cm² V^-1 s^-1 may lead to low charge accumulation and hence high exciton dynamics. The current study has successfully projected an in-depth analysis on the suitable energy-level alignments, which would further help to streamline future endeavours in developing efficient organic compounds and designing devices with superior performance.

Micro-to-nanometer patterning of solution-based materials for electronics and optoelectronics

Technologies for micro-to-nanometer patterns of solution-based materials (SBMs) contribute to a wide range of practical applications in the fields of electronics and optoelectronics. Here, state-of-the-art micro-to-nanometer scale patterning technologies of SBMs are disseminated. The utilisation of patterning for a wide-range of SBMs leads to a high level of control over conventional solution-based film fabrication processes that are not easily accessible for the control and fabrication of ordered micro-to-nanometer patterns. In this review, various patterning procedures of SBMs, including modified photolithography, direct-contact patterning, and inkjet printing, are briefly introduced with several strategies for reducing their pattern size to enhance the electronic and optoelectronic properties of SBMs explained. We then conclude with comments on future research directions in the field.