Efficient Surface Plasmon Polariton Excitation and Control over Outcoupling Mechanisms in Metal-Insulator-Metal Tunneling Junctions

Electrically Driven Deterministic Plasmon Light Sources Based on Arrays of Molecular Tunnel Junctions

Surface plasmons excited via inelastic tunnelling have led to plasmon light sources with small footprints and ultrafast response speeds, which are favored by integrated optical circuits. Self-assembled monolayers of organic molecules function as highly tunable tunnel barriers with novel functions. However, limited by the low effective contact between the liquid metal electrode and the self-assembled monolayers, it is quite challenging to obtain molecular plasmon light sources with high density and uniform emission. Here, by combining lithographic patterning with a solvent treatment method, we have demonstrated electrically driven deterministic plasmon emission from arrays of molecular tunnel junctions. The solvent treatment could largely improve the effective contact from 9.6% to 48% and simultaneously allow the liquid metal to fill into lithographically patterned micropore structures toward deterministic plasmon emission with desired patterns. Our findings open up new possibilities for tunnel junction-based plasmon light sources, laying the foundation for electrically driven light-emitting metasurfaces.

Light-Emitting Plasmonic Tunneling Junctions: Current Status and Perspectives

Quantum tunneling, in which electrons can tunnel through a finite potential barrier while simultaneously interacting with other matter excitation, is one of the most fascinating phenomena without classical correspondence. In an extremely thin metallic nanogap, the deep-subwavelength-confined plasmon modes can be directly excited by the inelastically tunneling electrons driven by an externally applied voltage. Light emission via inelastic tunneling possesses a great potential application for next-generation light sources, with great superiority of ultracompact integration, large bandwidth, and ultrafast response. In this Perspective, we first briefly introduce the mechanism of plasmon generation in the inelastic electron tunneling process. Then the state of the art in plasmonic tunneling junctions will be reviewed, particularly emphasizing efficiency improvement, precise construction, active control, and electrically driven optical antenna integration. Ultimately, we forecast some promising and critical prospects that require further investigation.

Engineering the Outcoupling Pathways in Plasmonic Tunnel Junctions via Photonic Mode Dispersion for Low-Loss Waveguiding

Outcoupling of plasmonic modes excited by inelastic electron tunneling (IET) across plasmonic tunnel junctions (TJs) has attracted significant attention due to low operating voltages and fast excitation rates. Achieving selectivity among various outcoupling channels, however, remains a challenging task. Employing nanoscale antennas to enhance the local density of optical states (LDOS) associated with specific outcoupling channels partially addressed the problem, along with the integration of conducting 2D materials into TJs, improving the outcoupling to guided modes with particular momentum. The disadvantage of such methods is that they often involve complex fabrication steps and lack fine-tuning options. Here, we propose an alternative approach by modifying the dielectric medium surrounding TJs. By employing a simple multilayer substrate with a specific permittivity combination for the TJs under study, we show that it is possible to optimize mode selectivity in outcoupling to a plasmonic or a photonic-like mode characterized by distinct cutoff behaviors and propagation length. Theoretical and experimental results obtained with a SiO2-SiN-glass multilayer substrate demonstrate high relative coupling efficiencies of (62.77 ± 1.74)% and (29.07 ± 0.72)% for plasmonic and photonic-like modes, respectively. The figure-of-merit, which quantifies the tradeoff between mode outcoupling and propagation lengths (tens of μm) for both modes, can reach values as high as 180 and 140. The demonstrated approach allows LDOS engineering and customized TJ device performance, which are seamlessly integrated with standard thin film fabrication protocols. Our experimental device is well-suited for integration with silicon nitride photonics platforms.

Waveguide-Integrated Light-Emitting Metal-Insulator-Graphene Tunnel Junctions

Ultrafast interfacing of electrical and optical signals at the nanoscale is highly desired for on-chip applications including optical interconnects and data processing devices. Here, we report electrically driven nanoscale optical sources based on metal-insulator-graphene tunnel junctions (MIG-TJs), featuring waveguided output with broadband spectral characteristics. Electrically driven inelastic tunneling in a MIG-TJ, realized by integrating a silver nanowire with graphene, provides broadband excitation of plasmonic modes in the junction with propagation lengths of several micrometers (∼10 times larger than that for metal-insulator-metal junctions), which therefore propagate toward the junction edge with low loss and couple to the nanowire waveguide with an efficiency of ∼70% (∼1000 times higher than that for metal-insulator-metal junctions). Alternatively, lateral coupling of the MIG-TJ to a semiconductor nanowire provides a platform for efficient outcoupling of electrically driven plasmonic signals to low-loss photonic waveguides, showing potential for applications at various integration levels.

Electrically Driven Plasmons in Metal-Insulator-Semiconductor Tunnel Junctions: The Role of Silicon Amorphization

We investigate electrically driven plasmon (EDP) emission in metal-insulator-semiconductor tunnel junctions. We find that amorphization of the silicon crystal at a narrow region near the junction due to the applied voltage plays a critical role in determining the nature of the emission. Furthermore, we suggest that the change in the properties of the insulating layer above a threshold voltage determines the EDP spatial properties, from being spatially uniform when the device is subjected to low voltages, to a spotty pattern peaking at high voltages. We emphasize the role of the high-energy emission as an unambiguous tool for distinguishing between EDP and radiative recombination of electrons and holes in the semiconductor.

Optical properties of plasmonic tunneling junctions

Over the last century, quantum theories have revolutionized our understanding of material properties. One of the most striking quantum phenomena occurring in heterogeneous media is the quantum tunneling effect, where carriers can tunnel through potential barriers even if the barrier height exceeds the carrier energy. Interestingly, the tunneling process can be accompanied by the absorption or emission of light. In most tunneling junctions made of noble metal electrodes, these optical phenomena are governed by plasmonic modes, i.e., light-driven collective oscillations of surface electrons. In the emission process, plasmon excitation via inelastic tunneling electrons can improve the efficiency of photon generation, resulting in bright nanoscale optical sources. On the other hand, the incident light can affect the tunneling behavior of plasmonic junctions as well, leading to phenomena such as optical rectification and induced photocurrent. Thus, plasmonic tunneling junctions provide a rich platform for investigating light-matter interactions, paving the way for various applications, including nanoscale light sources, sensors, and chemical reactors. In this paper, we will introduce recent research progress and promising applications based on plasmonic tunneling junctions.

Refractive Index Sensor Based on the Fano Resonance in Metal-Insulator-Metal Waveguides Coupled with a Whistle-Shaped Cavity

A plasmonic refractive index sensor based on surface plasmon polaritons (SPPs) that consist of metal-insulator-metal (MIM) waveguides and a whistle-shaped cavity is proposed. The transmission properties were simulated numerically by using the finite element method. The Fano resonance phenomenon can be observed in their transmission spectra, which is due to the coupling of SPPs between the transmission along the clockwise and anticlockwise directions. The refractive index-sensing properties based on the Fano resonance were investigated by changing the refractive index of the insulator of the MIM waveguide. Modulation of the structural parameters on the Fano resonance and the optics transmission properties of the coupled structure of two MIM waveguides with a whistle-shaped cavity were designed and evaluated. The results of this study will help in the design of new photonic devices and micro-sensors with high sensitivity, and can serve as a guide for future application of this structure.

Plasmonic phenomena in molecular junctions: principles and applications

Molecular junctions are building blocks for constructing future nanoelectronic devices that enable the investigation of a broad range of electronic transport properties within nanoscale regions. Crossing both the nanoscopic and mesoscopic length scales, plasmonics lies at the intersection of the macroscopic photonics and nanoelectronics, owing to their capability of confining light to dimensions far below the diffraction limit. Research activities on plasmonic phenomena in molecular electronics started around 2010, and feedback between plasmons and molecular junctions has increased over the past years. These efforts can provide new insights into the near-field interaction and the corresponding tunability in properties, as well as resultant plasmon-based molecular devices. This Review presents the latest advancements of plasmonic resonances in molecular junctions and details the progress in plasmon excitation and plasmon coupling. We also highlight emerging experimental approaches to unravel the mechanisms behind the various types of light-matter interactions at molecular length scales, where quantum effects come into play. Finally, we discuss the potential of these plasmonic-electronic hybrid systems across various future applications, including sensing, photocatalysis, molecular trapping and active control of molecular switches.

Tunable directional emission from electrically driven nano-strip metal-insulator-metal tunnel junctions

Electrically driven nanoantennas for on-chip generation and manipulation of light have attracted significant attention in recent times. Metal-insulator-metal (MIM) tunnel junctions have been extensively used to electrically excite surface plasmons and photons via inelastic electron tunneling. However, the dynamic switching of light from MIM junctions into spatially separate channels has not been shown. Here, we numerically demonstrate switchable, highly directional light emission from electrically driven nano-strip Ag-SiO2-Ag tunnel junctions. The top electrode of our Ag-SiO2-Ag stack is divided into 16 nano-strips, with two of the tunnel junctions at the centre (S L and S R) acting as sources. Using full-wave electromagnetic simulations, we show that when S L is excited, the emission is highly directional with an angle of emission of -30° and an angular spread of ∼11°. When the excitation is switched to S R, the emission is redirected to an angle of 30° with an identical angular spread. A directivity of 29.4 is achieved in the forward direction, with a forward-to-backward ratio of 12. We also demonstrate wavelength-selective directional switching by changing the width, and thereby the resonance wavelength, of the sources. The emission can be tuned by varying the periodicity of the structure, paving the way for electrically driven, reconfigurable light sources.

MXene supported surface plasmons on telecommunications optical fibers

MXenes, an emerging class of two-dimensional materials, exhibit characteristics that promise significant potential for their use in next generation optoelectronic sensors. An interplay between interband transitions and boundary effects offer the potential to tune the plasma frequencies over a large spectral range from the near-infrared to the mid-infrared. This tuneability along with the 'layered' nature of the material not only offer the flexibility to produce plasmon resonances across a wide range of wavelengths, but also add a degree of freedom to the sensing mechanism by allowing the plasma frequency to be modulated. Here we show, numerically, that MXenes can support plasmons in the telecommunications frequency range and that surface plasmon resonances can be excited on a standard MXene coated side polished optical fiber. Thus, presenting the tantalising prospect of highly selective distributed optical fiber sensor networks.

CMOS-Compatible Electronic-Plasmonic Transducers Based on Plasmonic Tunnel Junctions and Schottky Diodes

To develop methods to generate, manipulate, and detect plasmonic signals by electrical means with complementary metal-oxide-semiconductor (CMOS)-compatible materials is essential to realize on-chip electronic-plasmonic transduction. Here, electrically driven, CMOS-compatible electronic-plasmonic transducers with Al-AlO_X -Cu tunnel junctions as the excitation source of surface plasmon polaritons (SPPs) and Si-Cu Schottky diodes as the detector of SPPs, connected via plasmonic strip waveguides of Cu, are demonstrated. Remarkably, the electronic-plasmonic transducers exhibit overall transduction efficiency of 1.85 ± 0.03%, five times higher than previously reported transducers with two tunnel junctions (metal-insulator-metal (MIM)-MIM transducers) where SPPs are detected based on optical rectification. The result establishes a new platform to convert electronic signals to plasmonic signals via electrical means, paving the way toward CMOS-compatible plasmonic components.

Optical Anisotropy in van der Waals materials: Impact on Direct Excitation of Plasmons and Photons by Quantum Tunneling

Inelastic quantum mechanical tunneling of electrons across plasmonic tunnel junctions can lead to surface plasmon polariton (SPP) and photon emission. So far, the optical properties of such junctions have been controlled by changing the shape, or the type of the material, of the electrodes, primarily with the aim to improve SPP or photon emission efficiencies. Here we show that by tuning the tunneling barrier itself, the efficiency of the inelastic tunneling rates can be improved by a factor of 3. We exploit the anisotropic nature of hexagonal boron nitride (hBN) as the tunneling barrier material in Au//hBN//graphene tunnel junctions where the Au electrode also serves as a plasmonic strip waveguide. As this junction constitutes an optically transparent hBN-graphene heterostructure on a glass substrate, it forms an open plasmonic system where the SPPs are directly coupled to the dedicated strip waveguide and photons outcouple to the far field. We experimentally and analytically show that the photon emission rate per tunneling electron is significantly improved (~ ×3) in Au//hBN//graphene tunnel junction due to the enhancement in the local density of optical states (LDOS) arising from the hBN anisotropy. With the dedicated strip waveguide, SPP outcoupling efficiency is quantified and is found to be ∼ 80% stronger than the radiative outcoupling in Au//hBN//graphene due to the high LDOS of the SPP decay channel associated with the inelastic tunneling. The new insights elucidated here deepen our understanding of plasmonic tunnel junctions beyond the isotropic models with enhanced LDOS.

Electrically Excited Plasmonic Ultraviolet Light Sources

The emission of photons from metal-insulator-metal (MIM) nanojunctions through inelastic tunneling of electrically driven electrons is a well-acknowledged approach to develop miniaturized light sources and ultradense photonic instruments. Generally, the existing research in the optimization of electromigrated tunneling junctions is principally centered on the generation of visible and near-infrared lights. This study reports on the near-ultraviolet (NUV, λ ≈ 355 nm) light emission from enhanced tunneling of electrons using aluminum nanoelectrodes. Compared to conventional noble metals, the high electron density and low screening of aluminum enable supporting of pronounced local fields at high energies (i.e, ultraviolet (UV)). As the color of light can be straightforwardly determined by the properties of tunneling structures, the exquisite features of aluminum have empowered the fashioning of tunneling devices that are able to effectively sustain plasmons at short wavelengths and emit UV light with high photon yield. This demonstration is a breakthrough in the generation of high-energy beams using electrically excited aluminum tunneling platforms, which promisingly accelerates the implementation of electrically tunable and ultradense UV light sources.

Geometric control over surface plasmon polariton out-coupling pathways in metal-insulator-metal tunnel junctions

Metal-insulator-metal tunnel junctions (MIM-TJs) can electrically excite surface plasmon polaritons (SPPs) well below the diffraction limit. When inelastically tunneling electrons traverse the tunnel barrier under applied external voltage, a highly confined cavity mode (MIM-SPP) is excited, which further out-couples from the MIM-TJ to photons and single-interface SPPs via multiple pathways. In this work we control the out-coupling pathways of the MIM-SPP mode by engineering the geometry of the MIM-TJ. We fabricated MIM-TJs with tunneling directions oriented vertical or lateral with respect to the directly integrated plasmonic strip waveguides. With control over the tunneling direction, preferential out-coupling of the MIM-SPP mode to SPPs or photons is achieved. Based on the wavevector distribution of the single-interface SPPs or photons in the far-field emission intensity obtained from back focal plane (BFP) imaging, we estimate the out-coupling efficiency of the MIM-SPP mode to multiple out-coupling pathways. We show that in the vertical-MIM-TJs the MIM-SPP mode preferentially out-couples to single-interface SPPs along the strip waveguides while in the lateral-MIM-TJs photon out-coupling to the far-field is more efficient.

Plasmonic Gold Nanohole Arrays for Surface-Enhanced Sum Frequency Generation Detection

Nobel metal nanohole arrays have been used extensively in chemical and biological systems because of their fascinating optical properties. Gold nanohole arrays (Au NHAs) were prepared as surface plasmon polariton (SPP) generators for the surface-enhanced sum-frequency generation (SFG) detection of 4-Mercaptobenzonitrile (4-MBN). The angle-resolved reflectance spectra revealed that the Au NHAs have three angle-dependent SPP modes and two non-dispersive localized surface plasmon resonance (LSPR) modes under different structural orientation angles (sample surface orientation). An enhancement factor of ~30 was achieved when the SPP and LSPR modes of the Au NHAs were tuned to match the incident visible (VIS) and output SFG, respectively. This multi-mode matching strategy provided flexible controls and selective spectral windows for surface-enhanced measurements, and was especially useful in nonlinear spectroscopy where more than one light beam was involved. The structural orientation- and power-dependent performance demonstrated the potential of plasmonic NHAs in SFG and other nonlinear sensing applications, and provided a promising surface molecular analysis development platform.