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Giubileo F, Faella E, Capista D, Passacantando M, Durante O, Kumar A, Pelella A, Intonti K, Viscardi L, De Stefano S, Martucciello N, Craciun MF, Russo S, Di Bartolomeo A. Field enhancement induced by surface defects in two-dimensional ReSe 2 field emitters. NANOSCALE 2024; 16:16718-16728. [PMID: 39172122 DOI: 10.1039/d4nr02109f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
The field emission properties of rhenium diselenide (ReSe2) nanosheets on Si/SiO2 substrates, obtained through mechanical exfoliation, have been investigated. The n-type conduction was confirmed by using nano-manipulated tungsten probes inside a scanning electrode microscope to directly contact the ReSe2 flake in back-gated field effect transistor configuration, avoiding any lithographic process. By performing a finite element electrostatic simulation of the electric field, it is demonstrated that the use of a tungsten probe as anode, at a controlled distance from the ReSe2 emitter surface, allows the collection of emitted electrons from a reduced area that furtherly decreases by reducing the tip-sample distance, i.e. allowing a local characterization of the field emission properties. Experimentally, it is shown that the turn-on voltage can be linearly reduced by reducing the cathode-anode separation distance. By comparing the measured current-voltage characteristics with the numerical simulations, it is also shown that the effective field enhancement on the emitter surface is larger than expected because of surface defects. Finally, it is confirmed that ReSe2 nanosheets are suitable field emitters with high time stability and low current fluctuations.
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Affiliation(s)
- Filippo Giubileo
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
| | - Enver Faella
- Department of Physical and Chemical Science, University of L'Aquila, Via Vetoio, Coppito, 67100 L'Aquila, Italy
| | - Daniele Capista
- IHP-Leibnitz Institut fuer innovative Mikroelektronik, 15236 Frankfurt (Oder), Germany
| | - Maurizio Passacantando
- Department of Physical and Chemical Science, University of L'Aquila, Via Vetoio, Coppito, 67100 L'Aquila, Italy
| | - Ofelia Durante
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
- Department of Physics "E.R. Caianiello", University of Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
| | - Arun Kumar
- Department of Physics "E.R. Caianiello", University of Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
| | - Aniello Pelella
- Dipartimento di Fisica, Università degli studi di Roma Tor Vergata, via della Ricerca Scientifica 1, 00133 Rome, Italy
| | - Kimberly Intonti
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
- Department of Physics "E.R. Caianiello", University of Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
| | - Loredana Viscardi
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
- Department of Physics "E.R. Caianiello", University of Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
| | - Sebastiano De Stefano
- Department of Physics "E.R. Caianiello", University of Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
| | | | | | - Saverio Russo
- University of Exeter, Stocker Road 6, Exeter EX4 4QL, Devon, UK
| | - Antonio Di Bartolomeo
- CNR-SPIN Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
- Department of Physics "E.R. Caianiello", University of Salerno, via Giovanni Paolo II n.132, 84084 Fisciano, Italy.
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Kim S, Lee S, Oh S, Lee KB, Lee JJ, Kim B, Heo K, Park JH. Broadband Van-der-Waals Photodetector Driven by Ferroelectric Polarization. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2305045. [PMID: 37675813 DOI: 10.1002/smll.202305045] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/15/2023] [Revised: 08/15/2023] [Indexed: 09/08/2023]
Abstract
The potential for various future industrial applications has made broadband photodetectors beyond visible light an area of great interest. Although most 2D van-der-Waals (vdW) semiconductors have a relatively large energy bandgap (>1.2 eV), which limits their use in short-wave infrared detection, they have recently been considered as a replacement for ternary alloys in high-performance photodetectors due to their strong light-matter interaction. In this study, a ferroelectric gating ReS2 /WSe2 vdW heterojunction-channel photodetector is presented that successfully achieves broadband light detection (>1300 nm, expandable up to 2700 nm). The staggered type-II bandgap alignment creates an interlayer gap of 0.46 eV between the valence band maximum (VBMAX ) of WSe2 and the conduction band minimum (CBMIN ) of ReS2 . Especially, the control of poly(vinylidene fluoride-trifluoroethylene) (P(VDF-TrFE)) ferroelectric dipole polarity for a specific wavelength allows a high photoresponsivity of up to 6.9 × 103 A W-1 and a low dark current below 0.26 nA under the laser illumination with a wavelength of 405 nm in P-up mode. The achieved high photoresponsivity, low dark current, and full-range near infrared (NIR) detection capability open the door for next-generation photodetectors beyond traditional ternary alloy photodetectors.
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Affiliation(s)
- Sungjun Kim
- Foundry Division, Samsung Electronics Co. Ltd., Yongin, 17113, South Korea
- Samsung Institute of Technology, Yongin, 17113, South Korea
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Sunghun Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Seyong Oh
- Division of Electrical Engineering, Hanyang University ERICA, Ansan, 15588, South Korea
| | - Kyeong-Bae Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Je-Jun Lee
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Byeongchan Kim
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
| | - Keun Heo
- School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Jeonbuk National University, Jeonju, Jeollabuk-do, 54896, South Korea
| | - Jin-Hong Park
- Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
- SKKU Advanced Institute of Nano-Technology (SAINT), Sungkyunkwan University (SKKU), Suwon, 16419, South Korea
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3
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Mao Y, Wang H, Kislyakov I, Wang Z, Dong N, Wang J. Nonlinear optical properties and ultrafast carrier dynamics of ultrathin ReSe 2. OPTICS LETTERS 2023; 48:6259-6262. [PMID: 38039241 DOI: 10.1364/ol.510204] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 10/23/2023] [Accepted: 11/12/2023] [Indexed: 12/03/2023]
Abstract
Rhenium diselenide (ReSe2) has shown great application potential in the field of optical devices because of its excellent optoelectronic properties. In this study, we systematically investigated the nonlinear optical absorption properties of mono- and bi-layer ReSe2 and the ultrafast carrier dynamics process in the ultraviolet to near-infrared spectral range as the essential foundational groundwork for harnessing the potential of ultrathin ReSe2-based optoelectronic devices. We found that ReSe2 has excellent nonlinear absorption performance and a low saturation absorption intensity that is better than that of many semiconductor materials. Meanwhile, pump-probe and transient absorption technology revealed the underlying dynamic mechanisms, including bandgap renormalization and Auger recombination. This study can broaden the horizons of material science and propel the development of different applications of ReSe2.
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Nazir G, Rehman A, Hussain S, Hakami O, Heo K, Amin MA, Ikram M, Patil SA, Din MAU. Bias-Modified Schottky Barrier Height-Dependent Graphene/ReSe 2 van der Waals Heterostructures for Excellent Photodetector and NO 2 Gas Sensing Applications. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3713. [PMID: 36364489 PMCID: PMC9658387 DOI: 10.3390/nano12213713] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/10/2022] [Revised: 10/19/2022] [Accepted: 10/20/2022] [Indexed: 06/16/2023]
Abstract
Herein, we reported a unique photo device consisting of monolayer graphene and a few-layer rhenium diselenide (ReSe2) heterojunction. The prepared Gr/ReSe2-HS demonstrated an excellent mobility of 380 cm2/Vs, current on/off ratio ~ 104, photoresponsivity (R ~ 74 AW-1 @ 82 mW cm-2), detectivity (D* ~ 1.25 × 1011 Jones), external quantum efficiency (EQE ~ 173%) and rapid photoresponse (rise/fall time ~ 75/3 µs) significantly higher to an individual ReSe2 device (mobility = 36 cm2 V-1s-1, Ion/Ioff ratio = 1.4 × 105-1.8 × 105, R = 11.2 AW-1, D* = 1.02 × 1010, EQE ~ 26.1%, rise/fall time = 2.37/5.03 s). Additionally, gate-bias dependent Schottky barrier height (SBH) estimation for individual ReSe2 (45 meV at Vbg = 40 V) and Gr/ReSe2-HS (9.02 meV at Vbg = 40 V) revealed a low value for the heterostructure, confirming dry transfer technique to be successful in fabricating an interfacial defects-free junction. In addition, HS is fully capable to demonstrate an excellent gas sensing response with rapid response/recovery time (39/126 s for NO2 at 200 ppb) and is operational at room temperature (26.85 °C). The proposed Gr/ReSe2-HS is capable of demonstrating excellent electro-optical, as well as gas sensing, performance simultaneously and, therefore, can be used as a building block to fabricate next-generation photodetectors and gas sensors.
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Affiliation(s)
- Ghazanfar Nazir
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Adeela Rehman
- Department of Mechanical Engineering, College of Engineering, Kyung Hee University, Yongin 17104, Korea
| | - Sajjad Hussain
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Othman Hakami
- Department of Chemistry, Faculty of Science, Jazan University, Jazan, Saudi Arabia
| | - Kwang Heo
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
| | - Mohammed A. Amin
- Department of Chemistry, College of Science, Taif University, P.O. Box 11099, Taif 21944, Saudi Arabia
| | - Muhammad Ikram
- Solar Cell Applications Research Lab, Department of Physics, Government College University Lahore, Lahore 54000, Punjab, Pakistan
| | - Supriya A. Patil
- Department of Nanotechnology and Advanced Materials Engineering, Sejong University, Seoul 05006, Korea
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Xiong Y, Xu D, Feng Y, Zhang G, Lin P, Chen X. P-Type 2D Semiconductors for Future Electronics. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022:e2206939. [PMID: 36245325 DOI: 10.1002/adma.202206939] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/30/2022] [Revised: 09/30/2022] [Indexed: 06/16/2023]
Abstract
2D semiconductors represent one of the best candidates to extend Moore's law for their superiorities, such as keeping high carrier mobility and remarkable gate-control capability at atomic thickness. Complementary transistors and van der Waals junctions are critical in realizing 2D semiconductors-based integrated circuits suitable for future electronics. N-type 2D semiconductors have been reported predominantly for the strong electron doping caused by interfacial charge impurities and internal structural defects. By contrast, superior and reliable p-type 2D semiconductors with holes as majority carriers are still scarce. Not only that, but some critical issues have not been adequately addressed, including their controlled synthesis in wafer size and high quality, defect and carrier modulation, optimization of interface and contact, and application in high-speed and low-power integrated devices. Here the material toolkit, synthesis strategies, device basics, and digital electronics closely related to p-type 2D semiconductors are reviewed. Their opportunities, challenges, and prospects for future electronic applications are also discussed, which would be promising or even shining in the post-Moore era.
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Affiliation(s)
- Yunhai Xiong
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Duo Xu
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Yiping Feng
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
| | - Guangjie Zhang
- CAS Key Laboratory of Standardization and Measurement for Nanotechnology, CAS Center for Excellence in Nanoscience, National Center for Nanoscience and Technology, Beijing, 100190, China
| | - Pei Lin
- Key Laboratory of Materials Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450001, China
| | - Xiang Chen
- MIIT Key Laboratory of Advanced Display Materials and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing, 210094, China
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6
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Minin OV, Zhou S, Liu CY, Kong JAN, Minin IV. Magnetic Concentric Hot-Circle Generation at Optical Frequencies in All-Dielectric Mesoscale Janus Particles. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:3428. [PMID: 36234556 PMCID: PMC9565704 DOI: 10.3390/nano12193428] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 08/29/2022] [Revised: 09/22/2022] [Accepted: 09/29/2022] [Indexed: 06/16/2023]
Abstract
The development of all-dielectric structures with high magnetic response at optical frequencies has become a matter of intense study in past years. However, magnetic effects are weak at optical frequencies due to the small value of the magnetic permeability of natural materials. To this end, natural dielectric materials are unemployable for practical “magnetic” applications in optics. We have shown for the first time that it is possible to induce intense magnetic concentric subwavelength “hot circles” in a dielectric mesoscale Janus particle. The basis of the Janus particle is a combination of the effects of a photonic jet, whispering-gallery waves, and the concept of solid immersion. Simulations show an (H/H0)2/(E/E0)2 contrast of more than 10, and maximal magnetic field intensity enhancement is more than 1000 for a wavelength-scaled particle with a refractive index n < 2 and a size parameter in the order of 30. This work may provide a new way to realize precise magnetic devices for integrated photonic circuits and light−matter interaction.
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Affiliation(s)
- Oleg V. Minin
- Nondestructive Testing School, Tomsk Polytechnic University, 30 Lenin Ave., Tomsk 634050, Russia
| | - Song Zhou
- Jiangsu Key Laboratory of Advanced Manufacturing Technology, Faculty of Mechanical and Material Engineering, Huaiyin Institute of Technology, Huai’an 223003, China
| | - Cheng-Yang Liu
- Department of Biomedical Engineering, National Yang Ming Chiao Tung University, Taipei City 11221, Taiwan
- Medical Device Innovation and Translation Center, National Yang Ming Chiao Tung University, Taipei City 11221, Taiwan
| | | | - Igor V. Minin
- Nondestructive Testing School, Tomsk Polytechnic University, 30 Lenin Ave., Tomsk 634050, Russia
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7
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Lin CY, Lee MP, Chang YM, Tseng YT, Yang FS, Li M, Chen JY, Chen CF, Tsai MY, Lin YC, Ueno K, Yamamoto M, Lo ST, Lien CH, Chiu PW, Tsukagoshi K, Wu WW, Lin YF. Diffused Beam Energy to Dope van der Waals Electronics and Boost Their Contact Barrier Lowering. ACS APPLIED MATERIALS & INTERFACES 2022; 14:41156-41164. [PMID: 36037311 DOI: 10.1021/acsami.2c07679] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Contact engineering of two-dimensional semiconductors is a central issue for performance improvement of micro-/nanodevices based on these materials. Unfortunately, the various methods proposed to improve the Schottky barrier height normally require the use of high temperatures, chemical dopants, or complex processes. This work demonstrates that diffused electron beam energy (DEBE) treatment can simultaneously reduce the Schottky barrier height and enable the direct writing of electrical circuitry on van der Waals semiconductors. The electron beam energy projected into the region outside the electrode diffuses into the main channel, producing selective-area n-type doping in a layered MoTe2 (or MoS2) field-effect transistor. As a result, the Schottky barrier height at the interface between the electrode and the DEBE-treated MoTe2 channel is as low as 12 meV. Additionally, because selective-area doping is possible, DEBE can allow the formation of both n- and p-type doped channels within the same atomic plane, which enables the creation of a nonvolatile and homogeneous MoTe2 p-n rectifier with an ideality factor of 1.1 and a rectification ratio of 1.3 × 103. These results indicate that the DEBE method is a simple, efficient, mask-free, and chemical dopant-free approach to selective-area doping for the development of van der Waals electronics with excellent device performances.
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Affiliation(s)
- Che-Yi Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Mu-Pai Lee
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yuan-Ming Chang
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Yi-Tang Tseng
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Feng-Shou Yang
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Mengjiao Li
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
| | - Jiann-Yeu Chen
- Department of Material Science and Engineering and i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan
- Innovation and Development Center of Sustainable Agriculture, National Chung Hsing University, Taichung 40227, Taiwan
| | - Ciao-Fen Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Meng-Yu Tsai
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Yi-Chun Lin
- Instrument Center, National Chung Hsing University, Taichung 40227, Taiwan
| | - Keiji Ueno
- Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570, Japan
| | - Mahito Yamamoto
- Department of Pure and Applied Physics, Kansai University, Osaka 564-8680, Japan
| | - Shun-Tsung Lo
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Chen-Hsin Lien
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Po-Wen Chiu
- Institute of Electronic Engineering, National Tsing Hua University, Hsinchu 30013, Taiwan
| | - Kazuhito Tsukagoshi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, Tsukuba 305-0044, Ibaraki, Japan
| | - Wen-Wei Wu
- Department of Materials Science and Engineering, National Yang Ming Chiao Tung University, Hsinchu 30010, Taiwan
| | - Yen-Fu Lin
- Department of Physics, National Chung Hsing University, Taichung 40227, Taiwan
- Institute of Nanoscience, National Chung Hsing University, Taichung 40227, Taiwan
- Department of Material Science and Engineering and i-Center for Advanced Science and Technology (i-CAST), National Chung Hsing University, Taichung 40227, Taiwan
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Kakkar S, Majumdar A, Ahmed T, Parappurath A, Gill NK, Watanabe K, Taniguchi T, Ghosh A. High-Efficiency Infrared Sensing with Optically Excited Graphene-Transition Metal Dichalcogenide Heterostructures. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2202626. [PMID: 35802900 DOI: 10.1002/smll.202202626] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/27/2022] [Revised: 06/21/2022] [Indexed: 06/15/2023]
Abstract
Binary van der Waals heterostructures of graphene (Gr) and transition metal dichalcogenide (TMDC) have evolved as a promising candidate for photodetection with very high responsivity due to the separation of photo-excited electron-hole pairs across the interface. The spectral range of optoelectronic response in such hybrids has so far been limited by the optical bandgap of the light absorbing TMDC layer. Here, the bidirectionality of interlayer charge transfer is utilized for detecting sub-band gap photons in Gr-TMDC heterostructures. A Gr/MoSe2 heterostructure sequentially driven by visible and near infra-red (NIR) photons is employed, to demonstrate that NIR induced back transfer of charge allows fast and repeatable detection of the low energy photons (less than the optical band gap of the TMDC layer). This mechanism provides photoresponsivity as high as ≈3000 A W-1 close to the communication wavelength. The experiment provides a new strategy for achieving highly efficient photodetection over a broad range of energies beyond the spectral bandgap with the 2D semiconductor family.
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Affiliation(s)
- Saloni Kakkar
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Aniket Majumdar
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Tanweer Ahmed
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | - Aparna Parappurath
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
| | | | - Kenji Watanabe
- Research Center for Functional Materials, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Takashi Taniguchi
- International Center for Materials Nanoarchitectonics, National Institute for Materials Science, 1-1 Namiki, Tsukuba, 305-0044, Japan
| | - Arindam Ghosh
- Department of Physics, Indian Institute of Science, Bangalore, 560012, India
- Center for Nano Science and Engineering, Indian Institute of Science, Bangalore, 560012, India
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9
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Kirubasankar B, Won YS, Adofo LA, Choi SH, Kim SM, Kim KK. Atomic and structural modifications of two-dimensional transition metal dichalcogenides for various advanced applications. Chem Sci 2022; 13:7707-7738. [PMID: 35865881 PMCID: PMC9258346 DOI: 10.1039/d2sc01398c] [Citation(s) in RCA: 9] [Impact Index Per Article: 4.5] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 03/09/2022] [Accepted: 05/18/2022] [Indexed: 12/14/2022] Open
Abstract
Two-dimensional (2D) transition metal dichalcogenides (TMDs) and their heterostructures have attracted significant interest in both academia and industry because of their unusual physical and chemical properties. They offer numerous applications, such as electronic, optoelectronic, and spintronic devices, in addition to energy storage and conversion. Atomic and structural modifications of van der Waals layered materials are required to achieve unique and versatile properties for advanced applications. This review presents a discussion on the atomic-scale and structural modifications of 2D TMDs and their heterostructures via post-treatment. Atomic-scale modifications such as vacancy generation, substitutional doping, functionalization and repair of 2D TMDs and structural modifications including phase transitions and construction of heterostructures are discussed. Such modifications on the physical and chemical properties of 2D TMDs enable the development of various advanced applications including electronic and optoelectronic devices, sensing, catalysis, nanogenerators, and memory and neuromorphic devices. Finally, the challenges and prospects of various post-treatment techniques and related future advanced applications are addressed.
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Affiliation(s)
- Balakrishnan Kirubasankar
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Yo Seob Won
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Laud Anim Adofo
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Ho Choi
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
| | - Soo Min Kim
- Department of Chemistry, Sookmyung Women's University Seoul 14072 South Korea
| | - Ki Kang Kim
- Department of Energy Science, Sungkyunkwan University Suwon 16419 South Korea
- Center for Integrated Nanostructure Physics (CINAP), Institute for Basic Science (IBS), Sungkyunkwan University Suwon 16419 South Korea
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10
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Faella E, Intonti K, Viscardi L, Giubileo F, Kumar A, Lam HT, Anastasiou K, Craciun MF, Russo S, Di Bartolomeo A. Electric Transport in Few-Layer ReSe 2 Transistors Modulated by Air Pressure and Light. NANOMATERIALS 2022; 12:nano12111886. [PMID: 35683748 PMCID: PMC9182458 DOI: 10.3390/nano12111886] [Citation(s) in RCA: 7] [Impact Index Per Article: 3.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 04/29/2022] [Revised: 05/19/2022] [Accepted: 05/27/2022] [Indexed: 12/04/2022]
Abstract
We report the fabrication and optoelectronic characterization of field-effect transistors (FETs) based on few-layer ReSe2. The devices show n-type conduction due to the Cr contacts that form low Schottky barriers with the ReSe2 nanosheet. We show that the optoelectronic performance of these FETs is strongly affected by air pressure, and it undergoes a dramatic increase in conductivity when the pressure is lowered below the atmospheric one. Surface-adsorbed oxygen and water molecules are very effective in doping ReSe2; hence, FETs based on this two-dimensional (2D) semiconductor can be used as an effective air pressure gauge. Finally, we report negative photoconductivity in the ReSe2 channel that we attribute to a back-gate-dependent trapping of the photo-excited charges.
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Affiliation(s)
- Enver Faella
- Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, SA, Italy; (E.F.); (K.I.); (L.V.); (A.K.)
- CNR-SPIN, 84084 Fisciano, SA, Italy;
| | - Kimberly Intonti
- Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, SA, Italy; (E.F.); (K.I.); (L.V.); (A.K.)
| | - Loredana Viscardi
- Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, SA, Italy; (E.F.); (K.I.); (L.V.); (A.K.)
| | | | - Arun Kumar
- Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, SA, Italy; (E.F.); (K.I.); (L.V.); (A.K.)
| | - Hoi Tung Lam
- University of Exeter, Stocker Road 6, Exeter EX4 4QL, Devon, UK; (H.T.L.); (K.A.); (M.F.C.); (S.R.)
| | - Konstantinos Anastasiou
- University of Exeter, Stocker Road 6, Exeter EX4 4QL, Devon, UK; (H.T.L.); (K.A.); (M.F.C.); (S.R.)
| | - Monica F. Craciun
- University of Exeter, Stocker Road 6, Exeter EX4 4QL, Devon, UK; (H.T.L.); (K.A.); (M.F.C.); (S.R.)
| | - Saverio Russo
- University of Exeter, Stocker Road 6, Exeter EX4 4QL, Devon, UK; (H.T.L.); (K.A.); (M.F.C.); (S.R.)
| | - Antonio Di Bartolomeo
- Department of Physics “E.R. Caianiello”, University of Salerno, 84084 Fisciano, SA, Italy; (E.F.); (K.I.); (L.V.); (A.K.)
- CNR-SPIN, 84084 Fisciano, SA, Italy;
- Correspondence: ; Tel.: +39-089-96-9189
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11
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Wang X, Xiong T, Zhao K, Zhou Z, Xin K, Deng HX, Kang J, Yang J, Liu YY, Wei Z. Polarimetric Image Sensor and Fermi Level Shifting Induced Multichannel Transition Based on 2D PdPS. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2022; 34:e2107206. [PMID: 34676919 DOI: 10.1002/adma.202107206] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/10/2021] [Revised: 10/20/2021] [Indexed: 06/13/2023]
Abstract
2D materials have been attracting high interest in recent years due to their low structural symmetry, excellent photoresponse, and high air stability. However, most 2D materials can only respond to specific light, which limits the development of wide-spectrum photodetectors. Proper bandgap and the regulation of Fermi level are the foundations for realizing electronic multichannel transition, which is an effective method to achieve a wide spectral response. Herein, a noble 2D material, palladium phosphide sulfide (PdPS), is designed and synthesized. The bandgap of PdPS is around 2.1 eV and the formation of S vacancies, interstitial Pd and P atoms promote the Fermi level very close to the conduction band. Therefore, the PdPS-based photodetector shows impressive wide spectral response from solar-blind ultraviolet to near-infrared based on the multichannel transition. It also exhibits superior optoelectrical properties with photoresponsivity (R) of 1 × 103 A W-1 and detectivity (D*) of 4 × 1011 Jones at 532 nm. Moreover, PdPS exhibits good performance of polarization detection with dichroic ratio of ≈3.7 at 808 nm. Significantly, it achieves polarimetric imaging and hidden-target detection in complex environments through active detection.
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Affiliation(s)
- Xingang Wang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Tao Xiong
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kai Zhao
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Ziqi Zhou
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
| | - Hui-Xiong Deng
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Jun Kang
- Beijing Computational Science Research Center, Beijing, 100193, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Yue-Yang Liu
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- Sino-Danish Center for Education and Research, Sino-Danish College, University of Chinese Academy of Sciences, Beijing, 100049, China
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12
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Ahn J, Ko K, Kyhm JH, Ra HS, Bae H, Hong S, Kim DY, Jang J, Kim TW, Choi S, Kang JH, Kwon N, Park S, Ju BK, Poon TC, Park MC, Im S, Hwang DK. Near-Infrared Self-Powered Linearly Polarized Photodetection and Digital Incoherent Holography Using WSe 2/ReSe 2 van der Waals Heterostructure. ACS NANO 2021; 15:17917-17925. [PMID: 34677045 DOI: 10.1021/acsnano.1c06234] [Citation(s) in RCA: 16] [Impact Index Per Article: 5.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/13/2023]
Abstract
Polarization-sensitive photodetection has attracted considerable attention as an emerging technology for future optoelectronic applications such as three-dimensional (3D) imaging, quantum optics, and encryption. However, traditional photodetectors based on Si or III-V InGaAs semiconductors cannot directly detect polarized light without additional optical components. Herein, we demonstrate a self-powered linear-polarization-sensitive near-infrared (NIR) photodetector using a two-dimensional WSe2/ReSe2 van der Waals heterostructure. The WSe2/ReSe2 heterojunction photodiode with semivertical geometry exhibits excellent performance: an ideality factor of 1.67, a broad spectral photoresponse of 405-980 nm with a significant photovoltaic effect, outstanding linearity with a linear dynamic range wider than 100 dB, and rapid photoswitching behavior with a cutoff frequency up to 100 kHz. Strongly polarized excitonic transitions around the band edge in ReSe2 lead to significant 980 nm NIR linear-polarization-dependent photocurrent. This linear polarization sensitivity remains stable even after exposure to air for longer than five months. Furthermore, by leveraging the NIR (980 nm)-selective linear polarization detection of this photodiode under photovoltaic operation, we demonstrate digital incoherent holographic 3D imaging.
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Affiliation(s)
- Jongtae Ahn
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Kyul Ko
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ji-Hoon Kyhm
- Quantum-functional Semiconductor Research Center, Dongguk University, Seoul 04620, Republic of Korea
| | - Hyun-Soo Ra
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Heesun Bae
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Sungjae Hong
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Dae-Yeon Kim
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Jisu Jang
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Tae Wook Kim
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Sungwon Choi
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Ji-Hoon Kang
- Research Laboratory of Electronics, Massachusetts Institute of Technology (MIT), Cambridge, Massachusetts 02139, United States
| | - Namhee Kwon
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Soohyung Park
- Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
| | - Byeong-Kwon Ju
- Display and Nanosystem Laboratory, College of Engineering, Korea University, Seoul 02841, Republic of Korea
| | - Ting-Chung Poon
- Bradley Department of Electrical and Computer Engineering, Virginia Tech, Blacksburg, Virginia 24061, United States
| | - Min-Chul Park
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
| | - Seongil Im
- Van der Waals Materials Research Center, Institute of Physics and Applied Physics, Yonsei University, Seoul 03722, Republic of Korea
| | - Do Kyung Hwang
- Center of Optoelectronic Materials and Devices, Post-Silicon Semiconductor Institute, Korea Institute of Science and Technology (KIST), Seoul 02792, Republic of Korea
- Division of Nano & Information Technology, KIST School, University of Science and Technology (UST), Seoul 02792, Republic of Korea
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13
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Efficient ReSe 2 Photodetectors with CVD Single-Crystal Graphene Contacts. NANOMATERIALS 2021; 11:nano11071650. [PMID: 34201696 PMCID: PMC8303534 DOI: 10.3390/nano11071650] [Citation(s) in RCA: 4] [Impact Index Per Article: 1.3] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/18/2021] [Revised: 06/07/2021] [Accepted: 06/18/2021] [Indexed: 01/16/2023]
Abstract
Rhenium-based 2D transition metal dichalcogenides such as ReSe2 are suitable candidates as photoactive materials for optoelectronic devices. Here, photodetectors based on mechanically exfoliated ReSe2 crystals were fabricated using chemical vapor deposited (CVD) graphene single-crystal (GSC) as lateral contacts. A “pick & place” method was adopted to transfer the desired crystals to the intended position, easing the device fabrication while reducing potential contaminations. A similar device with Au was fabricated to compare contacts’ performance. Lastly, a CVD hexagonal boron nitride (hBN) substrate passivation layer was designed and introduced in the device architecture. Raman spectroscopy was carried out to evaluate the device materials’ structural and electronic properties. Kelvin probe force measurements were done to calculate the materials’ work function, measuring a minimal Schottky barrier height for the GSC/ReSe2 contact (0.06 eV). Regarding the electrical performance, I-V curves showed sizable currents in the GSC/ReSe2 devices in the dark and under illumination. The devices presented high photocurrent and responsivity, along with an external quantum efficiency greatly exceeding 100%, confirming the non-blocking nature of the GSC contacts at high bias voltage (above 2 V). When introducing the hBN passivation layer, the device under white light reached a photo-to-dark current ratio up to 106.
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14
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Seo SG, Ryu JH, Kim SY, Jeong J, Jin SH. Enhancement of Photodetective Properties on Multilayered MoS 2 Thin Film Transistors via Self-Assembled Poly-L-Lysine Treatment and Their Potential Application in Optical Sensors. NANOMATERIALS (BASEL, SWITZERLAND) 2021; 11:1586. [PMID: 34204218 PMCID: PMC8234691 DOI: 10.3390/nano11061586] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Download PDF] [Figures] [Subscribe] [Scholar Register] [Received: 05/17/2021] [Revised: 06/07/2021] [Accepted: 06/10/2021] [Indexed: 01/04/2023]
Abstract
Photodetectors and display backplane transistors based on molybdenum disulfide (MoS2) have been regarded as promising topics. However, most studies have focused on the improvement in the performances of the MoS2 photodetector itself or emerging applications. In this study, to suggest a better insight into the photodetector performances of MoS2 thin film transistors (TFTs), as photosensors for possible integrated system, we performed a comparative study on the photoresponse of MoS2 and hydrogenated amorphous silicon (a-Si:H) TFTs. As a result, in the various wavelengths and optical power ranges, MoS2 TFTs exhibit 2~4 orders larger photo responsivities and detectivities. The overall quantitative comparison of photoresponse in single device and inverters confirms a much better performance by the MoS2 photodetectors. Furthermore, as a strategy to improve the field effect mobility and photoresponse of the MoS2 TFTs, molecular doping via poly-L-lysine (PLL) treatment was applied to the MoS2 TFTs. Transfer and output characteristics of the MoS2 TFTs clearly show improved photocurrent generation under a wide range of illuminations (740~365 nm). These results provide useful insights for considering MoS2 as a next-generation photodetector in flat panel displays and makes it more attractive due to the fact of its potential as a high-performance photodetector enabled by a novel doping technique.
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Affiliation(s)
| | | | | | | | - Sung Hun Jin
- Department of Electronic Engineering, Incheon National University, Incheon 22012, Korea; (S.G.S.); (J.H.R.); (S.Y.K.); (J.J.)
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15
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Dou W, Jia Y, Hao X, Meng Q, Wu J, Zhai S, Li T, Hu W, Song B, Zhou M. Time-Domain Ab Initio Insights into the Reduced Nonradiative Electron-Hole Recombination in ReSe 2/MoS 2 van der Waals Heterostructure. J Phys Chem Lett 2021; 12:2682-2690. [PMID: 33689347 DOI: 10.1021/acs.jpclett.1c00455] [Citation(s) in RCA: 14] [Impact Index Per Article: 4.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 06/12/2023]
Abstract
Two-dimensional (2D) ReSe2 has attracted considerable interest due to its unique anisotropic mechanical, optical, and exitonic characteristics. Recent transient absorption experiments demonstrated a prolonged lifetime of photoexcited charge carriers by stacking ReSe2 with MoS2, but the underlying mechanism remains elusive. Here, by combining time-domain density functional theory with nonadiabatic molecular dynamics, we investigate the electronic properties and charge carrier dynamics of 2D ReSe2/MoS2 van der Waals (vdW) heterostructure. ReSe2/MoS2 has a type II band alignment that exhibits spatially distinguished conduction and valence band edges, and a built-in electric field is formed due to interface charge transfer. Remarkably, in spite of the decreased band gap and increased decoherence time, we demonstrate that the photocarrier lifetime of ReSe2/MoS2 is ∼5 times longer than that of ReSe2, which originates from the greatly reduced nonadiabatic coupling that suppresses electron-hole recombination, perfectly explaining the experimental results. These findings not only provide physical insights into experiments but also shed light on future design and fabrication of functional optoelectronic devices based on 2D vdW heterostructures.
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Affiliation(s)
- Wenzhen Dou
- School of Physics, Beihang University, Beijing 100191, China
| | - Yizhen Jia
- School of Physics, Beihang University, Beijing 100191, China
| | - Xiamin Hao
- School of Physics, Beihang University, Beijing 100191, China
| | - Qingling Meng
- School of Physics, Beihang University, Beijing 100191, China
| | - Jinge Wu
- School of Physics, Beihang University, Beijing 100191, China
| | - Shuwei Zhai
- School of Physics, Beihang University, Beijing 100191, China
| | - Tianzhao Li
- School of Physics, Beihang University, Beijing 100191, China
| | - Weijuan Hu
- School of Physics, Beihang University, Beijing 100191, China
| | - Biyu Song
- School of Physics, Beihang University, Beijing 100191, China
| | - Miao Zhou
- School of Physics, Beihang University, Beijing 100191, China
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16
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Li X, Chen C, Yang Y, Lei Z, Xu H. 2D Re-Based Transition Metal Chalcogenides: Progress, Challenges, and Opportunities. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2020; 7:2002320. [PMID: 33304762 PMCID: PMC7709994 DOI: 10.1002/advs.202002320] [Citation(s) in RCA: 22] [Impact Index Per Article: 5.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/19/2020] [Revised: 08/22/2020] [Indexed: 05/16/2023]
Abstract
The rise of 2D transition-metal dichalcogenides (TMDs) materials has enormous implications for the scientific community and beyond. Among TMDs, ReX2 (X = S, Se) has attracted significant interest regarding its unusual 1T' structure and extraordinary properties in various fields during the past 7 years. For instance, ReX2 possesses large bandgaps (ReSe2: 1.3 eV, ReS2: 1.6 eV), distinctive interlayer decoupling, and strong anisotropic properties, which endow more degree of freedom for constructing novel optoelectronic, logic circuit, and sensor devices. Moreover, facile ion intercalation, abundant active sites, together with stable 1T' structure enable them great perspective to fabricate high-performance catalysts and advanced energy storage devices. In this review, the structural features, fundamental physicochemical properties, as well as all existing applications of Re-based TMDs materials are comprehensively introduced. Especially, the emerging synthesis strategies are critically analyzed and pay particular attention is paid to its growth mechanism with probing the assembly process of domain architectures. Finally, current challenges and future opportunities regarding the controlled preparation methods, property, and application exploration of Re-based TMDs are discussed.
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Affiliation(s)
- Xiaobo Li
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Chao Chen
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Yang Yang
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Zhibin Lei
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
| | - Hua Xu
- Key Laboratory of Applied Surface and Colloid ChemistryMinistry of EducationShaanxi Key Laboratory for Advanced Energy DevicesSchool of Materials Science and EngineeringShaanxi Normal UniversityXi'an710119P. R. China
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