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Wang B, Jiang K, Zhang Z, Xie Z, Fang T, Wang X, Liu K, Chen Y, Liu M, Jia Y, Sun X, Li D. Heterojunction polarization enhancement and shielding for AlGaN-based solar-blind ultraviolet avalanche detectors. OPTICS LETTERS 2024; 49:3279-3282. [PMID: 38824383 DOI: 10.1364/ol.527435] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/16/2024] [Accepted: 05/16/2024] [Indexed: 06/03/2024]
Abstract
AlGaN-based solar-blind ultraviolet avalanche detectors have huge potentials in the fields of corona discharge monitoring, biological imaging, etc. Here, we study the impact of the heterojunction polarization-related effects on the AlGaN-based solar-blind ultraviolet avalanche detectors. Our work confirms that the polarization heterojunction is beneficial to reducing avalanche bias and lifting avalanche gain by improving the electric field in the depletion region, while the polarization-induced fixed charges will lead to a redistribution of the electrons, in turn shielding the charges and weakening the electric field enhancement effect. This shielding effect will need external bias to eliminate, and that is why the polarization heterojunction cannot work at relatively low bias but has an enhancement effect at high bias. Controlling the doping level between the hetero-interface can affect the shielding effect. An unintentionally doped polarization heterojunction can effectively reduce the shielding effect, thus reducing the avalanche bias. The conclusions also hold true for the negative polarization regime. We believe our findings can provide some useful insights for the design of the AlGaN-based solar-blind ultraviolet detectors.
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Fakhri MA, Jabbar HD, AbdulRazzaq MJ, Salim ET, Azzahrani AS, Ibrahim RK, Ismail RA. Preparation of GaN/Porous silicon heterojunction photodetector by laser deposition technique. Sci Rep 2023; 13:14746. [PMID: 37679411 PMCID: PMC10485076 DOI: 10.1038/s41598-023-41396-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/13/2023] [Accepted: 08/25/2023] [Indexed: 09/09/2023] Open
Abstract
In this work, gallium nitride (GaN) thin film was deposited on porous silicon (PSi) substrate via a pulsed laser deposition route with a 355 nm laser wavelength, 900 mJ of laser energy, and various substrate temperatures raging from 200 to 400 °C. The structural and optical properties of GaN films as a function of substrate temperature are investigate. XRD studies reveal that the GaN films deposited on porous silicon are nanocrystalline with a hexagonal wurtzite structure along (002) plane. The photoluminescence emission peaks of the GaN/PSi prepared at 300 °C substrate temperature are located at 368 nm and 728 nm corresponding to energy gap of 3.36 eV and 1.7 eV, respectively. The GaN/PSi heterojunction photodetector prepared at 300 °C exhibits the maximum performance, with a responsivity of 29.03 AW-1, detectivity of 8.6 × 1012 Jones, and an external quantum efficiency of 97.2% at 370 nm. Similarly, at 575 nm, the responsivity is 19.86 AW-1, detectivity is 8.9 × 1012 Jones, and the external quantum efficiency is 50.89%. Furthermore, the photodetector prepared at a temperature of 300 °C demonstrates a switching characteristic where the rise time and fall time are measured to be 363 and 711 μs, respectively.
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Affiliation(s)
- Makram A Fakhri
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Haneen D Jabbar
- Applied Science Department, University of Technology-Iraq, Baghdad, Iraq
| | | | - Evan T Salim
- Laser and Optoelectronic Engineering Department, University of Technology-Iraq, Baghdad, Iraq.
| | - Ahmad S Azzahrani
- Electrical Engineering Department, Northern Border University, Arar, Kingdom of Saudi Arabia.
| | | | - Raid A Ismail
- Laser and Optoelectronic Engineering Department, University of Technology-Iraq, Baghdad, Iraq
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Xu L, Ge X, Huang Z, Liu T, Wang R, Gao H, Zhou Y, Wang M, Wang J, Xu K. Broadband ultraviolet plasmonic enhanced AlGaN/GaN heterojunction photodetectors with close-packed Al nanoparticle arrays. Phys Chem Chem Phys 2023; 25:22794-22803. [PMID: 37584078 DOI: 10.1039/d3cp02060f] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/17/2023]
Abstract
Plasmonic metallic nanostructures could concentrate optical fields into nanoscale volumes and support efficient light scattering and absorption, which therefore stimulates the continuing development of advanced plasmonic-assisted semiconductor photodetectors. In this work, by fabricating Al nanoparticle (NP) arrays in AlGaN surface using the AAO template transferring method, significant broadband ultraviolet (UV) photoresponse enhancement was demonstrated on AlGaN/GaN heterojunction photodetectors. By deliberately designing the close-packed Al NP arrays, the broadband UV plasmonic resonance with large optical field absorption and strong interface field enhancement are enabled, hence, the highest responsivity exceeding 8.1 A W-1 and maximum external quantum efficiency of 3500% was obtained at the resonance wavelength 292 nm, revealing more than 80 times the excellent enhancement in responsivity. Specifically, owing to coupling among NPs at the Al/AlGaN interface, the smaller size Al NP array exhibits an excellent photoresponse enhancement encompassing the entire UV band compared to the relatively larger size Al NP array. In addition, different photoresponse enhancements depending on the applied bias were observed. The Al NPs detector also demonstrates a fast photoresponse with a rise time of around 60 ms and a relatively long fall time of 1.42 s. This work could be of great significance for gaining a low and efficient approach to achieve plasmonic-empowered heterojunction broadband UV detectors.
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Affiliation(s)
- Leilei Xu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
| | - Xiaotian Ge
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
| | - Zengli Huang
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
| | - Tong Liu
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
| | - Rongxin Wang
- Vacuum Interconnected Nanotech Workstation (Nano-X), Suzhou Institute of Nano-Tech and Nano-Bionics (SINANO), Chinese Academy of Sciences, Suzhou 215123, China.
| | - Hongwei Gao
- CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Yu Zhou
- CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Miao Wang
- CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Jianfeng Wang
- CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
| | - Ke Xu
- CAS Key Laboratory of Nanophotonic Materials and Devices, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China.
- Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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Guo L, Liu X, Cong R, Gao L, Zhang K, Zhao L, Wang X, Wang RN, Pan C, Yang Z. Patterned 2D Ferroelectric Perovskite Single-Crystal Arrays for Self-Powered UV Photodetector Boosted by Combining Ferro-Pyro-Phototronic and Piezo-Phototronic Effects. NANO LETTERS 2022; 22:8241-8249. [PMID: 36215318 DOI: 10.1021/acs.nanolett.2c02978] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Metal halide perovskite ferroelectrics possess various physical characteristics such as piezoelectric and pyroelectric effects, which could broaden the application of perovskite ferroelectrics and enhance the optoelectronic performance. Therefore, it is promising to combine multiple effects to optimize the performance of the self-powered PDs. Herein, patterned 2D ferroelectric perovskite (PMA)2PbCl4 microbelt arrays were demonstrated through a PDMS template-assisted antisolvent crystallization method. The perovskite arrays based flexible photodetectors exhibited fine self-powered photodetection performance under 320 nm illumination and much enhanced reproducibility compared with the randomly distributed single-crystal microbelts-based PDs. Furthermore, by introducing the piezo-phototronic effect, the performance of the flexible PD was greatly enhanced. Under an external tensile strain of 0.71%, the responsivity was enhanced by 185% from 84 to 155.5 mA/W. Our findings offer the advancement of comprehensively utilizing various physical characteristics of the ferroelectrics for novel ferroelectric optoelectronics.
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Affiliation(s)
- Linjuan Guo
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Xiu Liu
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Ridong Cong
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Linjie Gao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Kai Zhang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Lei Zhao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Xinzhan Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Rui-Ning Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, PR China
| | - Zheng Yang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, PR China
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Quynh LT, Cheng CW, Huang CT, Raja SS, Mishra R, Yu MJ, Lu YJ, Gwo S. Flexible Plasmonics Using Aluminum and Copper Epitaxial Films on Mica. ACS NANO 2022; 16:5975-5983. [PMID: 35333048 DOI: 10.1021/acsnano.1c11191] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
We demonstrate here the growth of aluminum (Al), copper (Cu), gold (Au), and silver (Ag) epitaxial films on two-dimensional, layered muscovite mica (Mica) substrates via van der Waals (vdW) heteroepitaxy with controllable film thicknesses from a few to hundreds of nanometers. In this approach, the mica thin sheet acts as a flexible and transparent substrate for vdW heteroepitaxy, which allows for large-area formation of atomically smooth, single-crystalline, and ultrathin plasmonic metals without the issue of film dewetting. The high-quality plasmonic metal films grown on mica enable us to design and fabricate well-controlled Al and Cu plasmonic nanostructures with tunable surface plasmon resonances ranging from visible to the near-infrared spectral region. Using these films, two kinds of plasmonic device applications are reported, including (1) plasmonic sensors with high effective index sensitivities based on surface plasmon interferometers fabricated on the Al/Mica film and (2) Cu/Mica nanoslit arrays for plasmonic color filters in the visible and near-infrared regions. Furthermore, we show that the responses of plasmonic nanostructures fabricated on the Mica substrates remain unaltered under large substrate bending conditions. Therefore, the metal-on-mica vdW heteroepitaxy platform is suitable for flexible plasmonics based on their bendable properties.
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Affiliation(s)
- Le Thi Quynh
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Chang-Wei Cheng
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Chiao-Tzu Huang
- Department of Electrophysics, National Yang-Ming Chaio-Tung University, Hsinchu 30010, Taiwan
| | - Soniya Suganthi Raja
- Institute of Nanoengineering and Microsystems, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Ragini Mishra
- Institute of Nanoengineering and Microsystems, National Tsing-Hua University, Hsinchu 30013, Taiwan
| | - Meng-Ju Yu
- Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Yu-Jung Lu
- Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei 11529, Taiwan
| | - Shangjr Gwo
- Department of Physics, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Department of Electrophysics, National Yang-Ming Chaio-Tung University, Hsinchu 30010, Taiwan
- Institute of Nanoengineering and Microsystems, National Tsing-Hua University, Hsinchu 30013, Taiwan
- Research Center for Applied Sciences, Academia Sinica, Nankang, Taipei 11529, Taiwan
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Zhao L, Liu C, Wang K. Progress of GaN-Based Optoelectronic Devices Integrated with Optical Resonances. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2106757. [PMID: 35218296 DOI: 10.1002/smll.202106757] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/04/2021] [Revised: 01/16/2022] [Indexed: 06/14/2023]
Abstract
Being direct wide bandgap, III-nitride (III-N) semiconductors have many applications in optoelectronics, including light-emitting diodes, lasers, detectors, photocatalysis, etc. Incorporation of III-N semiconductors with high-efficiency optical resonances including surface plasmons, distributed Bragg reflectors and micro cavities, has attracted considerable interests for upgrading their performance, which can not only reveal the new coupling mechanisms between optical resonances and quasiparticles, but also unveil the shield of novel optoelectronic devices with superior performances. In this review, the content covers the recent progress of GaN-based optoelectronic devices integrated with plasmonics and/or micro resonators, including the LEDs, photodetectors, solar cells, and light photocatalysis. The authors aim to provide an inspiring insight of recent remarkable progress and breakthroughs, as well as a promising prospect for the future highly-integrated, high speed, and efficient GaN-based optoelectronic devices.
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Affiliation(s)
- Lixia Zhao
- School of Electrical Engineering, Tiangong University, 399 Binshuixi Road, Tianjin, 300387, P. R. China
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Chang Liu
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
| | - Kaiyou Wang
- State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, A35 Qinghua East Road, Beijing, 100083, P. R. China
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7
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Yang W, Xin K, Yang J, Xu Q, Shan C, Wei Z. 2D Ultrawide Bandgap Semiconductors: Odyssey and Challenges. SMALL METHODS 2022; 6:e2101348. [PMID: 35277948 DOI: 10.1002/smtd.202101348] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/18/2021] [Revised: 02/11/2022] [Indexed: 06/14/2023]
Abstract
2D ultrawide bandgap (UWBG) semiconductors have aroused increasing interest in the field of high-power transparent electronic devices, deep-ultraviolet photodetectors, flexible electronic skins, and energy-efficient displays, owing to their intriguing physical properties. Compared with dominant narrow bandgap semiconductor material families, 2D UWBG semiconductors are less investigated but stand out because of their propensity for high optical transparency, tunable electrical conductivity, high mobility, and ultrahigh gate dielectrics. At the current stage of research, the most intensively investigated 2D UWBG semiconductors are metal oxides, metal chalcogenides, metal halides, and metal nitrides. This paper provides an up-to-date review of recent research progress on new 2D UWBG semiconductor materials and novel physical properties. The widespread applications, i.e., transistors, photodetector, touch screen, and inverter are summarized, which employ 2D UWBG semiconductors as either a passive or active layer. Finally, the existing challenges and opportunities of the enticing class of 2D UWBG semiconductors are highlighted.
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Affiliation(s)
- Wen Yang
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Kaiyao Xin
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Juehan Yang
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Qun Xu
- School of Materials Science and Engineering, Zhengzhou University, Zhengzhou, 450052, China
| | - Chongxin Shan
- Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key laboratory of Materials Physics, Ministry of Education, and School of Physics and Microelectronics, Zhengzhou University, Zhengzhou, 450052, China
| | - Zhongming Wei
- State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
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Guo L, Liu X, Gao L, Wang X, Zhao L, Zhang W, Wang S, Pan C, Yang Z. Ferro-Pyro-Phototronic Effect in Monocrystalline 2D Ferroelectric Perovskite for High-Sensitive, Self-Powered, and Stable Ultraviolet Photodetector. ACS NANO 2022; 16:1280-1290. [PMID: 34995467 DOI: 10.1021/acsnano.1c09119] [Citation(s) in RCA: 12] [Impact Index Per Article: 6.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/14/2023]
Abstract
2D hybrid perovskite ferroelectrics have drawn great attention in the field of photodetection, because the spontaneous polarization-induced built-in electric field can separate electron-hole pairs, and makes self-powered photodetection possible. However, most of the 2D hybrid perovskite-based photodetectors focused on the detection of visible light, and only a few reports realized the self-powered and sensitive ultraviolet (UV) detection using wide bandgap hybrid perovskites. Here, 2D ferroelectric PMA2PbCl4 monocrystalline microbelt (MMB)-based PDs are demonstrated. By using the ferro-pyro-phototronic effect, the self-powered Ag/Bi/2D PMA2PbCl4 MMB/Bi/Ag PDs show a high photoresponsivity up to 9 A/W under 320 nm laser illumination, which is much higher than those of previously reported self-powered UV PDs. Compared with responsivity induced by the photovoltaic effect, the responsivity induced by the ferro-pyro-phototronic effect is 128 times larger. The self-powered PD also shows fast response and recovery speed, with the rise time and fall time of 162 and 226 μs, respectively. More importantly, the 2D PMA2PbCl4 MMB-based PDs with Bi/Ag electrode exhibit significant stability when subjected to high humidity, continuous laser illumination, and thermal conditions. Our findings would shed light on the ferro-pyro-phototronic-effect-based devices, and provide a good method for high-performance UV detection.
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Affiliation(s)
- Linjuan Guo
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Xiu Liu
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Linjie Gao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Xinzhan Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Lei Zhao
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Wei Zhang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Shufang Wang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
| | - Caofeng Pan
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China
| | - Zheng Yang
- Hebei Key Laboratory of Optic-Electronic Information and Materials, National & Local Joint Engineering Laboratory of New Energy Photoelectric Devices, College of Physics Science and Technology, Hebei University, Baoding 071002, P. R. China
- CAS Center for Excellence in Nanoscience, Beijing Institute of Nanoenergy and Nanosystems, Chinese Academy of Sciences, Beijing 100083, P. R. China
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Lin S, Kulkarni R, Mandavkar R, Habib MA, Burse S, Kunwar S, Lee J. Surmounting the interband threshold limit by the hot electron excitation of multi-metallic plasmonic AgAuCu NPs for UV photodetector application. CrystEngComm 2022. [DOI: 10.1039/d2ce00367h] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/03/2023]
Abstract
Sharply improved photoresponse characteristics are demonstrated by the multi-metallic AgCu, AuCu and AgAuCu NP based UV-PDs through the superior photo carrier injection by the strong elemental composition-dependent hot electrons and localized surface plasmon resonance (LSPR).
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Affiliation(s)
- Shusen Lin
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Rakesh Kulkarni
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Rutuja Mandavkar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Md Ahasan Habib
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Shalmali Burse
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
| | - Sundar Kunwar
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
- Center for Integrated Nanotechnologies (CINT), Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA
| | - Jihoon Lee
- Department of Electronic Engineering, College of Electronics and Information, Kwangwoon University, Nowon-gu, Seoul, 01897, South Korea
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Dong M, Cheng H, Cai Y, Dai F, Wang L. High-transmission narrowband ultraviolet filter based on an aluminum laminated nanostructure on glass. OPTICS EXPRESS 2021; 29:39838-39846. [PMID: 34809339 DOI: 10.1364/oe.444409] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Received: 09/29/2021] [Accepted: 11/05/2021] [Indexed: 06/13/2023]
Abstract
We present an aluminum (Al) laminated nanostructure stacked on a glass substrate to produce highly transmitted narrowband ultraviolet (UV) filters. The laminated nanostructure was mainly composed of an Al nanohole array, and each Al nanohole had a coaxial Al nanoring at the bottom. This UV filter showed a single dominant peak with a high transmission over 50% and a narrow bandwidth less than 80 nm in the 200-400 nm waveband that was achieved based on the synergy of surface plasmon resonance (SPR) and localized surface plasmon resonance (LSPR). The electric field profiles of the laminated nanostructure indicate that SPR selects the transmission wavelength and LSPR contributes to single peak. This narrowband UV filter can be utilized in UV detectors.
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11
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Liu C, Li X, Hu T, Zhu W, Yan F, Wu T, Wang K, Zhao L. A nanopillar-modified high-sensitivity asymmetric graphene-GaN photodetector. NANOSCALE 2021; 13:17512-17520. [PMID: 34652361 DOI: 10.1039/d1nr04102a] [Citation(s) in RCA: 2] [Impact Index Per Article: 0.7] [Reference Citation Analysis] [Abstract] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 05/21/2023]
Abstract
Integration of two-dimensional (2D) materials with three-dimensional (3D) semiconductors leads to intriguing optical and electrical properties that surpass those of the original materials. Here, we report the high performance of a GaN nanopillar-modified graphene/GaN/Ti/Au photodetector (PD). After etching on the surface of a GaN film, GaN nanopillars exhibit multiple functions for improving the detection performance of the PD. Under dark conditions, surface etching reduces the contact area of GaN with the graphene electrode, leading to a reduced dark current for the PD. When illuminated with UV light, the nanopillars enable an enhanced and localized electric field inside GaN, resulting in an ∼20% UV light absorption enhancement and a several-fold increased photocurrent. In addition, the nanopillars are intentionally etched beneath the metal Ti/Au electrode to modify the semiconductor-metal junction. Further investigation shows that the modified GaN/Ti/Au contact triggers a prominent rectifying I-V behaviour. Benefiting from the nanopillar modification, the proposed PD shows a record large detectivity of 1.85 × 1017 Jones, a small dark current of 5.2 nA at +3 V bias, and a nearly three order of magnitude rectification ratio enhancement compared with non-nanopillar PDs. This pioneering work provides a novel nanostructure-modifying method for combining 2D materials and 3D semiconductors to improve the performances of electronic and optoelectronic devices.
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Affiliation(s)
- Chang Liu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Xiaodong Li
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
| | - Tiangui Hu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Wenkai Zhu
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Faguang Yan
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Tiesheng Wu
- Guangxi Key Laboratory of Wireless Wideband Communication and Signal Processing, Guangxi, China
| | - Kaiyou Wang
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
| | - Lixia Zhao
- State Key Laboratory of Superlattices and Microstructure, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, 100083, China
- State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China.
- School of Electrical and Electronic Engineering, Tiangong University, 399 Binshuixi Road, Tianjin 300387, P. R. China.
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Ahmadivand A. Electrically Excited Plasmonic Ultraviolet Light Sources. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2021; 17:e2100819. [PMID: 33938142 DOI: 10.1002/smll.202100819] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 02/08/2021] [Revised: 03/23/2021] [Indexed: 06/12/2023]
Abstract
The emission of photons from metal-insulator-metal (MIM) nanojunctions through inelastic tunneling of electrically driven electrons is a well-acknowledged approach to develop miniaturized light sources and ultradense photonic instruments. Generally, the existing research in the optimization of electromigrated tunneling junctions is principally centered on the generation of visible and near-infrared lights. This study reports on the near-ultraviolet (NUV, λ ≈ 355 nm) light emission from enhanced tunneling of electrons using aluminum nanoelectrodes. Compared to conventional noble metals, the high electron density and low screening of aluminum enable supporting of pronounced local fields at high energies (i.e, ultraviolet (UV)). As the color of light can be straightforwardly determined by the properties of tunneling structures, the exquisite features of aluminum have empowered the fashioning of tunneling devices that are able to effectively sustain plasmons at short wavelengths and emit UV light with high photon yield. This demonstration is a breakthrough in the generation of high-energy beams using electrically excited aluminum tunneling platforms, which promisingly accelerates the implementation of electrically tunable and ultradense UV light sources.
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Affiliation(s)
- Arash Ahmadivand
- Metamaterial Technologies Inc. (META), Pleasanton, CA, 94588, USA
- Department of Electrical and Computer Engineering, Rice University, 6100 Main St, Houston, TX, 77005, USA
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