Probing Efficient N-Type Lanthanide Dopants for Mg3Sb2 Thermoelectrics

High-performance Mg3Sb2-based thermoelectrics with reduced structural disorder and microstructure evolution

Mg3Sb2-based thermoelectrics show great promise for next-generation thermoelectric power generators and coolers owing to their excellent figure of merit (zT) and earth-abundant composition elements. However, the complexity of the defect microstructure hinders the advancement of high performance. Here, the defect microstructure is modified via In doping and prolonged sintering time to realize the reduced structural disorder and microstructural evolution, synergistically optimizing electron and phonon transport via a delocalization effect. As a result, an excellent carrier mobility of ~174 cm2 V-1 s-1 and an ultralowκ l a t of ~0.42 W m-1 K-1 are realized in this system, leading to an ultrahigh zT of ~2.0 at 723 K. The corresponding single-leg module demonstrates a high conversion efficiency of ~12.6% with a 425 K temperature difference, and the two-pair module of Mg3Sb2/MgAgSb displays ~7.1% conversion efficiency with a 276 K temperature difference. This work paves a pathway to improve the thermoelectric performance of Mg3Sb2-based materials, and represents a significant step forward for the practical application of Mg3Sb2-based devices.

Low-Cost Magnesium-Based Thermoelectric Materials: Progress, Challenges, and Enhancements

Magnesium-based thermoelectric (TE) materials have attracted considerable interest due to their high ZT values, coupled with their low cost, widespread availability, nontoxicity, and low density. In this review, we provide a succinct overview of the advances and strategies pertaining to the development of Mg-based materials aimed at enhancing their performance. Following this, we delve into the major challenges posed by the severe working conditions, such as high temperature and thermal cycling, which adversely impact the behavior and long-term stability of the TE modules. Challenges include issues like the lack of mechanical strength, chemical instability, and unreliable contact. Subsequently, we focus on the key methodologies aimed at addressing these challenges to facilitate the broader application of the TE modules. These include boosting the mechanical strength, especially the toughness, through grain refining and additions of second phases. Furthermore, strategies targeted at enhancing the chemical stability through coatings and modifying the microstructure, as well as improving the contact design and materials, are discussed. In the end, we highlight the perspectives for boosting the practical applications of Mg-based TE materials in the future.

Stabilizing 4.6 V LiCoO2 via Er and Mg Trace Doping at Li-Site and Co-Site Respectively

Charging LiCoO2 to high voltages yields alluring specific capacities, yet the deleterious phase-transitions lead to significant capacity degradation. Herein, this study demonstrates a novel strategy to stabilize LiCoO2 at 4.6 V by doping with Er and Mg at the Li-site and Co-site, respectively, which is different from the traditional method of doping foreign elements solely at the Co-site. Theoretical calculations and experiments jointly reveal that the inclusion of Mg2+-dopants at the Co-site curbs the hexagonal-monoclinic phase transitions ≈4.2 V. However, this unintentionally compromises the stability of lattice oxygen in LiCoO2, exacerbating the undesired phase transition (O3 to H1-3) above 4.45 V. Fascinatingly, the introduction of Er3+-dopants into Li-sites enhances the stability of lattice oxygen in LiCoO2, effectively mitigating phase transitions above 4.45 V. Therefore, the Er, Mg co-doped LiCoO2 exhibits high stability over 500 cycles when tested in a half-cell with a cut-off voltage of 4.6 V. Furthermore, the Er, Mg-doped LiCoO2//graphite pouch-type full cell demonstrates a high energy density of 310.8 Wh kg-1, preserving 91.3% of its energy over 100 cycles.

Inhibiting Mg Diffusion and Evaporation by Forming Mg-Rich Reservoir at Grain Boundaries Improves the Thermal Stability of N-Type Mg3 Sb2 Thermoelectrics

N-type Mg3 Sb2 -based thermoelectric materials show great promise in power generation due to their mechanical robustness, low cost of Mg, and high figure of merit (ZT) over a wide range of temperatures. However, their poor thermal stability hinders their practical applications. Here, MgB2 is introduced to improve the thermal stability of n-type Mg3 Sb2 . Enabled by MgB2 decomposition, extra Mg can be released into the matrix for Mg compensation thermodynamically, and secondary phases of Mg─B compounds can kinetically prevent Mg diffusion along grain boundaries. These synergetic effects inhibit the formation of Mg vacancies at elevated temperatures, thereby enhancing the thermal stability of n-type Mg3 Sb2 . Consequently, the Mg3.05 (Sb0.75 Bi0.25 )1.99 Te0.01 (MgB2 )0.03 sample exhibits negligible variation in thermoelectric performance during the 120-hour continuous measurement at 673 K. Moreover, the ZT of n-type Mg3 Sb2 can be maintained by adding MgB2 , reaching a high average ZT of ≈1.1 within 300-723 K. An eight-pair Mg3 Sb2 -GeTe-based thermoelectric device is also fabricated, achieving an energy conversion efficiency of ≈5.7% at a temperature difference of 438 K with good thermal stability. This work paves a new way to enhance the long-term thermal stability of n-type Mg3 Sb2 -based alloys and other thermoelectrics for practical applications.

Band Engineering and Phonon Engineering Effectively Improve n-Type Mg3Sb2 Thermoelectric Material Properties

Mg3Sb2-based thermoelectric materials can convert heat and electricity into each other, making them a promising class of environmentally friendly materials. Further improving the electrical performance while effectively reducing the thermal conductivity is a crucial issue. In this paper, under the guidance of the oneness principle calculation, we designed a thermoelectric Zintl phase based on Mg3.2Sb1.5Bi0.5 doped with Tb and Er. Calculation results show that using Tb and Er as cationic site dopants effectively improves the electrical properties and reduces the lattice thermal conductivity. Experimental results confirmed the effectiveness of codoping and effectively enhanced thermoelectric performance. The most immense ZT value obtained by the Mg3.185Tb0.01Er0.005Sb1.5Bi0.5 sample was 1.71. In addition, the average Young's modulus of the Mg3.185Tb0.01Er0.005Sb1.5Bi0.5 sample is 51.85 GPa, and the Vickers hardness is 0.99 GPa. Under the same test environment, the material was subjected to 12 cycles in the temperature range of 323-723 K, and the average power factor error range was 1.8% to 2.1%, which is of practical significance for its application in actual device scenarios.

Mg Compensating Design in the Melting-Sintering Method For High-Performance Mg3 (Bi, Sb)2 Thermoelectric Devices

N-type Mg3 (Bi, Sb)2 -based thermoelectric (TE) alloys show great promise for solid-state power generation and refrigeration, owing to their excellent figure-of-merit (ZT) and using cheap Mg. However, their rigorous preparation conditions and poor thermal stability limit their large-scale applications. Here, this work develops an Mg compensating strategy to realize n-type Mg3 (Bi, Sb)2 by a facile melting-sintering approach. "2D roadmaps" of TE parameters versus sintering temperature and time are plotted to understand the Mg-vacancy-formation and Mg-diffusion mechanisms. Under this guidance, high weight mobility of 347 cm2  V-1  s-1 and power factor of 34 µW cm-1  K-2 can be obtained for Mg3.05 Bi1.99 Te0.01 , and a peak ZT≈1.55 at 723 K and average ZT≈1.25 within 323-723 K can be obtained for Mg3.05 (Sb0.75 Bi0.25 )1.99 Te0.01 . Moreover, this Mg compensating strategy can also improve the interfacial connecting and thermal stability of corresponding Mg3 (Bi, Sb)2 /Fe TE legs. As a consequence, this work fabricates an 8-pair Mg3 Sb2 -GeTe-based power-generation device reaching an energy conversion efficiency of ≈5.0% at a temperature difference of 439 K, and a one-pair Mg3 Sb2 -Bi2 Te3 -based cooling device reaching -10.7 °C at the cold side. This work paves a facile way to obtain Mg3 Sb2 -based TE devices at low cost and also provides a guide to optimize the off-stoichiometric defects in other TE materials.

Strained Lamellar Structures Leading to Improved Thermoelectric Performance in Mg3Sb1.5Bi0.5

Mg3Sb2-xBix solid-solutions represent an important class of thermoelectric (TE) materials due to their high efficiency and variable operating temperature range. Of particular significance for midtemperature applications is the Mg3Sb1.5Bi0.5 composition whose superior thermoelectric (TE) performance is attributed to the complex conduction band edge in conjunction with alloy dominated phonon scattering. In this work, we show that microstructure also plays a significant role in lowering the lattice thermal conductivity which in turn affects the overall TE performance (change in peak zT values between 1.1 and 1.4 have been observed). Temperature dependent TE properties of Mg3+xSb1.5Bi0.5 compositions with varying nominal Mg content (x = 0.2, 0.3, 0.4) have been studied. A marked reduction of the lattice thermal conductivity (κL) is observed in compositions with low nominal Mg content (x = 0.2), which is due to the presence of lamellar structures within the grains. These lamellar regions are isostructural to the matrix with a low misfit angle and represent compositional fluctuations in the Bi to Sb ratio. Both the size (200 nm-500 nm) and the interfacial strain contribute to the enhanced phonon scattering. A quantitative estimate of κL reduction due to these structures have been carried out using a mean free path (MFP) spectrum analysis which reveal a good match with experiments at room temperature. Further, the electrical properties are not influenced by these lamellar structures as observed from the similar power-factor (S2σ) and weighted mobilities in all of the compositions. This is due to their similar orientation to the adjacent matrix region. Thus, the zT parameter in the various compositions with similar carrier concentration can be significantly altered (∼25%) by adjusting the nominal Mg content. The results demonstrate that preferential phonon scattering by microstructure modification can be a new route for property improvement in Mg3+xSb2-yBiy solid-solutions.

Atomic Local Ordering and Alloying Effects on the Mg3(Sb1-xBix)2 Thermoelectric Material

Mg3(Sb1-xBix)2 alloy has been extensively studied in the last 5 years due to its exceptional thermoelectric (TE) performance. The absence of accurate force field for inorganic alloy compounds presents great challenges for computational studies. Here, we explore the atomic microstructure, thermal, and elastic properties of the Mg3(Sb1-xBix)2 alloy at different solution concentrations through atomic simulations with a highly accurate machine learning interatomic potential (ML-IAP). We find atomic local ordering in the optimized structure with the Bi-Bi pair inclined to join adjacent layers and Sb-Sb pair preferring to stay within the same layer. The thermal conductivity changes with the solution concentrations can be correctly predicted through ML-IAP-based molecular dynamics simulations. Spectral thermal conductance analysis shows that the continuous movement of low-frequency peak to high frequency is responsible for the reduction of the thermal conductivity upon alloying. Elastic calculations reveal that similar to the thermal conductivity, solid solution alloying can reduce the overall elastic properties at both Mg3Sb2 and Mg3Bi2 ends, while anisotropic behavior is clearly observed with linear interpolation relationship upon alloying along the interlayer direction and nonlinearity along the intralayer direction. Although the atomic local ordering shows little effects on the properties of the Mg3(Sb1-xBix)2 alloy with only two alloying elements, it possesses potential important impacts on multiprincipal element inorganic TE alloys. This work provides a recipe for computational studies on the TE alloy systems and thus can accelerate the discovery and optimization of TE materials with high TE performance.

Band Structure Engineering of Bi4O4SeCl2 for Thermoelectric Applications

The mixed anion material Bi₄O₄SeCl₂ has an ultralow thermal conductivity of 0.1 W m^–1 K^–1 along its stacking axis (c axis) at room temperature, which makes it an ideal candidate for electronic band structure optimization via doping to improve its thermoelectric performance. Here, we design and realize an optimal doping strategy for Bi₄O₄SeCl₂ from first principles and predict an enhancement in the density of states at the Fermi level of the material upon Sn and Ge doping. Experimental work realizes the as-predicted behavior in Bi_4–xSn_xO₄SeCl₂ (x = 0.01) through the precise control of composition. Careful consideration of multiple accessible dopant sites and charge states allows for the effective computational screening of dopants for thermoelectric properties in Bi₄O₄SeCl₂ and may be a suitable route for assessing other candidate materials.

Valence band structure and charge distribution in the layered lanthanide-doped CuCr0.99Ln0.01S2 (Ln = La, Ce) solid solutions

The comprehensive study of the electronic density distribution of CuCr_0.99Ln_0.01S₂ (Ln = La, Ce) solid solutions was carried out using both X-ray photoelectron and emission spectroscopy. It was found that cationic substitution of chromium with lanthanum or cerium atoms does not significantly affect the atomic charges of the matrix elements (Cu, Cr, S) in the lanthanide-doped solid solutions. The copper atoms in the composition of CuCrS₂-matrix and the lanthanide-doped solid solutions were found to be in the monovalent state. The chromium and lanthanide atoms were found to be in the trivalent state. This fact indicates the isovalent cationic substitution character. The sulfur atoms were found to be in the divalent state. The near-surface layers contain the additional oxidation forms of sulfur (S⁰, S⁴⁺_, S⁶⁺) and copper (Cu²⁺) atoms. The detailed analysis of the valence band structure using DFT calculations has shown that partial DOS distribution character of the matrix elements is preserved after the cationic substitution. The experimental valence band spectra structure of CuCrS₂-matrix and CuCr_0.99Ln_0.01S₂ is determined by the occupied copper d-states contribution. The contribution of the lanthanide states in the valence band structure is lower in comparison with those for the matrix elements. The major contribution of the lanthanide states was found to be mainly localized near the conduction band bottom.

Improved Thermoelectric Properties of N-Type Mg3Sb2 through Cation-Site Doping with Gd or Ho

The success of n-type doping has attracted strong research interest for exploring effective n-type dopants for Mg₃Sb₂ thermoelectrics. Herein, we experimentally study Gd and Ho as n-type dopants for Mg₃Sb₂ thermoelectrics. The synthesis, structural characterization, and thermoelectric properties of Gd-doped, Ho-doped, (Gd, Te)-codoped, and (Ho, Te)-codoped Mg₃Sb₂ samples are reported. It is found that Gd and Ho are effective n-type cation-site dopants showing a higher doping efficiency as well as a superior carrier concentration in comparison with anion-site doping with Te, consistent with the previous theoretical prediction. For n-type Mg₃Sb₂ samples doped with Gd or Ho, optimal thermoelectric figure of merit zT values of ∼1.26 and ∼0.94 at 725 K are obtained, respectively, in Mg_3.5Gd_0.04Sb₂ and Mg_3.5Ho_0.04Sb₂, which are superior to many reported Te-doped Mg₃Sb₂ without alloying with Mg₃Bi₂. By codoping with Gd (or Ho) and Te, reduced thermal conductivity and enhanced power factor values are achieved at high temperatures, which results in enhanced peak zT values well above unity at 725 K. This work reveals Gd and Ho as effective n-type dopants for Mg₃Sb₂ thermoelectric materials.