Optimizing Surface Chemistry of PbS Colloidal Quantum Dot for Highly Efficient and Stable Solar Cells via Chemical Binding

PbS Quantum Dots Ink with Months-Long Shelf-Lifetime Enabling Scalable and Efficient Short-Wavelength Infrared Photodetectors

The phase-transfer ligand exchange of PbS quantum dots (QDs) has substantially simplified device fabrication giving hope for future industrial exploitation. However, this technique when applied to QDs of large size (>4 nm) gives rise to inks with poor colloidal stability, thus hindering the development of QDs photodetectors in short-wavelength infrared range. Here, it is demonstrated that methylammonium lead iodide ligands can provide sufficient passivation of PbS QDs of size up to 6.7 nm, enabling inks with a minimum of ten-week shelf-life time, as proven by optical absorption and solution-small angle X-ray scattering. Furthermore, the maximum linear electron mobility of 4.7 × 10-2 cm2 V-1 s-1 is measured in field-effect transistors fabricated with fresh inks, while transistors fabricated with the same solution after ten-week storage retain 74% of the average starting electron mobility, demonstrating the outstanding quality both of the fresh and aged inks. Finally, photodetectors fabricated via blade-coating exhibit 76% external quantum efficiency at 1300 nm and 1.8 × 1012 Jones specific detectivity, values comparable with devices fabricated using ink with lower stability and wasteful methods such as spin-coating.

Colloidal Synthesis of P-Type Zn3As2 Nanocrystals

Zinc pnictides, particularly Zn3As2, hold significant promise for optoelectronic applications owing to their intrinsic p-type behavior and appropriate bandgaps. However, despite the outstanding properties of colloidal Zn3As2 nanocrystals, research in this area is lacking because of the absence of suitable precursors, occurrence of surface oxidation, and intricacy of the crystal structures. In this study, a novel and facile solution-based synthetic approach is presented for obtaining highly crystalline p-type Zn3As2 nanocrystals with accurate stoichiometry. By carefully controlling the feed ratio and reaction temperature, colloidal Zn3As2 nanocrystals are successfully obtained. Moreover, the mechanism underlying the conversion of As precursors in the initial phases of Zn3As2 synthesis is elucidated. Furthermore, these nanocrystals are employed as active layers in field-effect transistors that exhibit inherent p-type characteristics with native surface ligands. To enhance the charge transport properties, a dual passivation strategy is introduced via phase-transfer ligand exchange, leading to enhanced hole mobilities as high as 0.089 cm2 V-1 s-1. This study not only contributes to the advancement of nanocrystal synthesis, but also opens up new possibilities for previously underexplored p-type nanocrystal research.

Nanocrystals as performance-boosting materials for solar cells

Nanocrystals (NCs) have been widely studied owing to their distinctive properties and promising application in new-generation photoelectric devices. In photovoltaic devices, semiconductor NCs can act as efficient light harvesters for high-performance solar cells. Besides light absorption, NCs have shown great significance as functional layers for charge (hole and electron) transport and interface modification to improve the power conversion efficiency and stability of solar cells. NC-based functional layers can boost hole/electron transport ability, adjust energy level alignment between a light absorbing layer and charge transport layer, broaden the absorption range of an active layer, enhance intrinsic stability, and reduce fabrication cost. In this review, recent advances in NCs as a hole transport layer, electron transport layer, and interfacial layer are discussed. Additionally, NC additives to improve the performance of solar cells are demonstrated. Finally, a summary and future prospects of NC-based functional materials in solar cells are presented, addressing their limitations and suggesting potential solutions.

Reducing the Open-Circuit Voltage Loss of PbS Quantum Dot Solar Cells via Hybrid Ligand Exchange Treatment

The interface VOC loss between the active layer and the hole transport layer (HTL) of lead sulfide colloidal quantum dot (PbS-CQD) solar cells is a significant factor influencing the efficiency improvement of PbS colloidal quantum dot solar cells (PbS-CQDSCs). Currently, the most advanced solar cells adopt organic P-type HTLs (PbS-EDT) via solid-state ligand exchange with 1,2-ethanedithiol (EDT) on the CQD top active layer. However, EDT is unable to altogether remove the initial ligand oleic acid from the quantum dot surface, and its high reactivity leads to cracks in the HTL film caused by volume contractions, which inevitably results in significant VOC loss. These flaws prompted this research to develop a method involving hybrid organic ligand exchange using 3-mercaptopropionic acid (MPA) and 1,2-EDT (PbS-Hybrid) to overcome these drawbacks of VOC loss. The results indicated that the new exchange strategy improved the quality of the HTL film and benefited from the enhanced passivation of the quantum dot surface and better alignment of energy levels, and the average VOC of PbS-Hybrid devices is increased by approximately 25 mV compared to control devices. With the enhanced VOC, the average power conversion efficiency (PCE) of the devices is improved by 10%, with the highest PCE reaching 13.24%.

In-situ composited g-C3N4/polypyrrole nanomaterial applied as energy-storing electrode with ameliorated super-capacitive performance

Graphitic carbon nitride (g-C3N4) and polypyrrole (ppy) nanocomposites are synthesized and cast off as material for electrodes intended for energy storage, where the amount of pyrrole is being kept static after optimization by altering the amount of g-C3N4 to make a series of g-C3N4/ppy (pcn) nanocomposites. These nanocomposites are successfully synthesized by employing in-situ oxidation polymerization by oxidizing pyrrole. The nanocomposites are further characterized by Fourier transform infrared spectroscopy (FT-IR) for structural investigation, thermal gravimetric analysis (TGA) for thermal stability analysis, and field emission scanning electron microscopy (FESEM) and transmission electron microscopy (HR-TEM) for surface morphological scrutiny. The electrochemical measurements of the series are inspected with the help of galvanostatic charge-discharge (GCD), electrochemical impedance spectroscopy (EIS), and cyclic voltammetry (CV) measurements. It is detected that 0.4 pcn has the highest specific capacitance value of 555 F g-1 at 10 mV s-1 scan rate through CV and 475 F g-1 at a current density of 0.5 A g-1 through GCD in 1 M H2SO4 in contrast with neat g-C3N4 as well as ppy where both the precursors have this value below 100 F g-1. This composite exhibited good cyclic stability with high retention. The high energy density of 0.4 pcn composite is analyzed at 86 Wh/kg at a power density of 300 W/kg. Due to facile synthesis, significant specific capacitance, and excellent energy density, pcn is a promising candidate for its application in energy storage purposes.

Emerging Trends of Carbon-Based Quantum Dots: Nanoarchitectonics and Applications

Carbon-based quantum dots (QDs) have emerged as a fascinating class of advanced materials with a unique combination of optoelectronic, biocompatible, and catalytic characteristics, apt for a plethora of applications ranging from electronic to photoelectrochemical devices. Recent research works have established carbon-based QDs for those frontline applications through improvements in materials design, processing, and device stability. This review broadly presents the recent progress in the synthesis of carbon-based QDs, including carbon QDs, graphene QDs, graphitic carbon nitride QDs and their heterostructures, as well as their salient applications. The synthesis methods of carbon-based QDs are first introduced, followed by an extensive discussion of the dependence of the device performance on the intrinsic properties and nanostructures of carbon-based QDs, aiming to present the general strategies for device designing with optimal performance. Furthermore, diverse applications of carbon-based QDs are presented, with an emphasis on the relationship between band alignment, charge transfer, and performance improvement. Among the applications discussed in this review, much focus is given to photo and electrocatalytic, energy storage and conversion, and bioapplications, which pose a grand challenge for rational materials and device designs. Finally, a summary is presented, and existing challenges and future directions are elaborated.

Precursor Chemistry Enables the Surface Ligand Control of PbS Quantum Dots for Efficient Photovoltaics

The surface ligand environment plays a dominant role in determining the physicochemical, optical, and electronic properties of colloidal quantum dots (CQDs). Specifically, the ligand-related electronic traps are the main reason for the carrier nonradiative recombination and the energetic losses in colloidal quantum dot solar cells (CQDSCs), which are usually solved with numerous advanced ligand exchange reactions. However, the synthesis process, as the essential initial step to control the surface ligand environment of CQDs, has lagged behind these post-synthesis ligand exchange reactions. The current PbS CQDs synthesis tactic generally uses lead oxide (PbO) as lead precursor, and thus suffers from the water byproducts issue increasing the surface-hydroxyl ligands and aggravating trap-induced recombination in the PbS CQDSCs. Herein, an organic-Pb precursor, lead (II) acetylacetonate (Pb(acac)₂ ), is used instead of a PbO precursor to avoid the adverse impact of water byproducts. Consequently, the Pb(acac)₂ precursor successfully optimizes the surface ligands of PbS CQDs by reducing the hydroxyl ligands and increasing the iodine ligands with trap-passivation ability. Finally, the Pb(acac)₂ -based CQDSCs possess remarkably reduced trap states and suppressed nonradiative recombination, generating a certified record V_oc of 0.652 V and a champion power conversion efficiency (PCE) of 11.48% with long-term stability in planar heterojunction-structure CQDSCs.

Limiting Factors of Detectivity in Near-Infrared Colloidal Quantum Dot Photodetectors

Lead sulfide colloidal quantum dots (PbS CQDs) have shown great potential in photodetectors owing to their promising optical properties, especially their strong and tunable absorption. However, the limitation of the specific detectivity (D*) in CQD near-infrared (NIR) photodetectors remains unknown due to the ambiguous noise analysis. Therefore, a clear understanding of the noise current is critically demanded. Here, we elucidate that the noise current is the predominant factor limiting D*, and the noise is highly dependent on the trap densities in halide-passivated PbS films and the carriers injected from the Schottky contact (EDT-passivated PbS films/metal). It is found that the thickness of CQDs is proportional to their interface trap density, while it is inversely proportional to their minimal bulk trap density. A balance point can be reached at a certain thickness (136 nm) to minimize the trap density, giving rise to the improvement of D*. Utilizing thicker PbS-EDT films broadens the width of the tunneling barrier and thereby reduces the carrier injection, contributing to a further enhancement of D*. The limiting factors of D* determined in this work not only explain the physical mechanism of the influence on detection sensitivity but also give guidance to the design of high-performance CQD photodetectors.

Phase-Transfer Exchange Lead Chalcogenide Colloidal Quantum Dots: Ink Preparation, Film Assembly, and Solar Cell Construction

Solution-processed colloidal quantum dots (CQDs) are promising candidates for the third-generation photovoltaics due to their low cost and spectral tunability. The development of CQD solar cells mainly relies on high-quality CQD ink, smooth and dense film, and charge-extraction-favored device architectures. In particular, advances in the processing of CQDs are essential for high-quality QD solids. The phase transfer exchange (PTE), in contrast with traditional solid-state ligand exchange, has demonstrated to be the most promising approach for high-quality QD solids in terms of charge transport and defect passivation. As a result, the efficiencies of Pb chalcogenide CQD solar cells have been rapidly improved to 14.0%. In this review, the development of the PTE method is briefly reviewed for lead chalcogenide CQD ink preparation, film assembly, and device construction. Particularly, the key roles of lead halides and additional additives are emphasized for defect passivation and charge transport improvement. In the end, several potential directions for future research are proposed.

Efficiently Passivated PbSe Quantum Dot Solids for Infrared Photovoltaics

Infrared (IR) solar cells are promising devices for significantly improving the power conversion efficiency of common solar cells by harvesting the low-energy IR photons. PbSe quantum dots (QDs) are superior IR photon absorbing materials due to their strong quantum confinement and thus strong interdot electronic coupling. However, the high chemical activity of PbSe QDs leads to etching and poor passivation in ligand exchange, resulting in a high trap-state density and a high open circuit voltage (V_OC) deficit. Here we develop a hybrid ligand co-passivation strategy to simultaneously passivate the Pb and Se sites; that is, halide anions passivate the Pb sites and Cd cations passivate the Se sites. The cation and anion hybrid passivation substantially improves the quality of PbSe QD solids, giving rise to an excellent trap-state control and prolonged carrier lifetime. A high V_OC and a high short circuit current density (J_SC) are achieved simultaneously in the IR QD solar cells based on this hybrid ligand treatment. Finally, a IR-PCE of 1.31% under the 1100-nm-filtered solar illumination is achieved in the PbSe QD solar cells, which is the highest IR-PCE for PbSe QD IR solar cells at present. Additionally, the PbSe QD devices show a high external quantum efficiency of 80% at ∼1295 nm.