1
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Diao Z, Ueda K, Hou L, Li F, Yamashita H, Abe M. AI-Equipped Scanning Probe Microscopy for Autonomous Site-Specific Atomic-Level Characterization at Room Temperature. SMALL METHODS 2024:e2400813. [PMID: 39240014 DOI: 10.1002/smtd.202400813] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/31/2024] [Revised: 08/26/2024] [Indexed: 09/07/2024]
Abstract
An advanced scanning probe microscopy system enhanced with artificial intelligence (AI-SPM) designed for self-driving atomic-scale measurements is presented. This system expertly identifies and manipulates atomic positions with high precision, autonomously performing tasks such as spectroscopic data acquisition and atomic adjustment. An outstanding feature of AI-SPM is its ability to detect and adapt to surface defects, targeting or avoiding them as necessary. It is also designed to overcome typical challenges such as positional drift and tip apex atomic variations due to the thermal effects, ensuring accurate, site-specific surface analysis. The tests under the demanding conditions of room temperature have demonstrated the robustness of the system, successfully navigating thermal drift and tip fluctuations. During these tests on the Si(111)-(7 × 7) surface, AI-SPM autonomously identified defect-free regions and performed a large number of current-voltage spectroscopy measurements at different adatom sites, while autonomously compensating for thermal drift and monitoring probe health. These experiments produce extensive data sets that are critical for reliable materials characterization and demonstrate the potential of AI-SPM to significantly improve data acquisition. The integration of AI into SPM technologies represents a step toward more effective, precise and reliable atomic-level surface analysis, revolutionizing materials characterization methods.
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Grants
- 19H05789 Ministry of Education, Culture, Sports, Science and Technology, Japan
- 21H01812 Ministry of Education, Culture, Sports, Science and Technology, Japan
- 22K18945 Ministry of Education, Culture, Sports, Science and Technology, Japan
- 24K21716 Ministry of Education, Culture, Sports, Science and Technology, Japan
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Affiliation(s)
- Zhuo Diao
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan
| | - Keiichi Ueda
- Tokyo Metropolitan Industrial Technology, Research Institute, 2-4-10 Aomi, Koto-Ku, Tokyo, 135-0064, Japan
| | - Linfeng Hou
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan
| | - Fengxuan Li
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan
| | - Hayato Yamashita
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan
| | - Masayuki Abe
- Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-Cho, Toyonaka, Osaka, 560-8531, Japan
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2
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Quincke M, Mundszinger M, Biskupek J, Kaiser U. Defect Density and Atomic Defect Recognition in the Middle Layer of a Trilayer MoS 2 Stack. NANO LETTERS 2024; 24:10496-10503. [PMID: 38950105 PMCID: PMC11363126 DOI: 10.1021/acs.nanolett.4c02391] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/21/2024] [Revised: 06/26/2024] [Accepted: 06/27/2024] [Indexed: 07/03/2024]
Abstract
Molybdenum disulfide (MoS2) is one of the most intriguing two-dimensional materials, and moreover, its single atomic defects can significantly alter the properties. These defects can be both imaged and engineered using spherical and chromatic aberration-corrected high-resolution transmission electron microscopy (CC/CS-corrected HRTEM). In a few-layer stack, several atoms are vertically aligned in one atomic column. Therefore, it is challenging to determine the positions of missing atoms and the damage cross-section, particularly in the not directly accessible middle layers. In this study, we introduce a technique for extracting subtle intensity differences in CC/CS-corrected HRTEM images. By exploiting the crystal structure of the material, our method discerns chalcogen vacancies even in the middle layer of trilayer MoS2. We found that in trilayer MoS2 the middle layer's damage cross-section is about ten times lower than that in the monolayer. Our findings could be essential for the application of few-layer MoS2 in nanodevices.
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Affiliation(s)
- Moritz Quincke
- Central
Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute
for Quantum Optics, Ulm University, 89081 Ulm, Germany
| | - Manuel Mundszinger
- Central
Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
| | - Johannes Biskupek
- Central
Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
| | - Ute Kaiser
- Central
Facility Materials Science Electron Microscopy, Ulm University, 89081 Ulm, Germany
- Institute
for Quantum Optics, Ulm University, 89081 Ulm, Germany
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3
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Li K, Han X, Meng Y, Li J, Hong Y, Chen X, You JY, Yao L, Hu W, Xia Z, Ke G, Zhang L, Zhang J, Zhao X. Single-Image-Based Deep Learning for Precise Atomic Defect Identification. NANO LETTERS 2024; 24:10275-10283. [PMID: 39106329 DOI: 10.1021/acs.nanolett.4c02654] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 08/09/2024]
Abstract
Defect engineering is widely used to impart the desired functionalities on materials. Despite the widespread application of atomic-resolution scanning transmission electron microscopy (STEM), traditional methods for defect analysis are highly sensitive to random noise and human bias. While deep learning (DL) presents a viable alternative, it requires extensive amounts of training data with labeled ground truth. Herein, employing cycle generative adversarial networks (CycleGAN) and U-Nets, we propose a method based on a single experimental STEM image to tackle high annotation costs and image noise for defect detection. Not only atomic defects but also oxygen dopants in monolayer MoS2 are visualized. The method can be readily extended to other two-dimensional systems, as the training is based on unit-cell-level images. Therefore, our results outline novel ways to train the model with minimal data sets, offering great opportunities to fully exploit the power of DL in the materials science community.
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Affiliation(s)
- Kangshu Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaocang Han
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Yuan Meng
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Junxian Li
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | | | - Xiang Chen
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Jing-Yang You
- Department of Physics, National University of Singapore, Singapore 117551
| | - Lin Yao
- DP Technology, Beijing 100080, China
| | - Wenchao Hu
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Zhiyi Xia
- DP Technology, Beijing 100080, China
| | - Guolin Ke
- DP Technology, Beijing 100080, China
| | - Linfeng Zhang
- DP Technology, Beijing 100080, China
- AI for Science Institute, Beijing 100084, China
| | - Jin Zhang
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
| | - Xiaoxu Zhao
- School of Materials Science and Engineering, Peking University, Beijing 100871, China
- AI for Science Institute, Beijing 100084, China
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4
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Zhong K, Sun P, Xu H. Advances in Defect Engineering of Metal Oxides for Photocatalytic CO 2 Reduction. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2310677. [PMID: 38686700 DOI: 10.1002/smll.202310677] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 11/20/2023] [Revised: 02/29/2024] [Indexed: 05/02/2024]
Abstract
Photocatalytic CO2 reduction technology, capable of converting low-density solar energy into high-density chemical energy, stands as a promising approach to alleviate the energy crisis and achieve carbon neutrality. Semiconductor metal oxides, characterized by their abundant reserves, good stability, and easily tunable structures, have found extensive applications in the field of photocatalysis. However, the wide bandgap inherent in metal oxides contributes to their poor efficiency in photocatalytic CO2 reduction. Defect engineering presents an effective strategy to address these challenges. This paper reviews the research progress in defect engineering to enhance the photocatalytic CO2 reduction performance of metal oxides, summarizing defect classifications, preparation methods, and characterization techniques. The focus is on defect engineering, represented by vacancies and doping, for improving the performance of metal oxide photocatalysts. This includes advancements in expanding the photoresponse range, enhancing photogenerated charge separation, and promoting CO2 molecule activation. Finally, the paper provides a summary of the current issues and challenges faced by defect engineering, along with a prospective outlook on the future development of photocatalytic CO2 reduction technology.
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Affiliation(s)
- Kang Zhong
- School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Peipei Sun
- School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
| | - Hui Xu
- School of the Environment and Safety Engineering, Jiangsu University, Zhenjiang, 212013, P. R. China
- Jiangsu Collaborative Innovation Center of Technology and Material of Water Treatment, Suzhou University of Science and Technology, Suzhou, 215009, P. R. China
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5
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Lu B, Xia Y, Ren Y, Xie M, Zhou L, Vinai G, Morton SA, Wee ATS, van der Wiel WG, Zhang W, Wong PKJ. When Machine Learning Meets 2D Materials: A Review. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2024; 11:e2305277. [PMID: 38279508 PMCID: PMC10987159 DOI: 10.1002/advs.202305277] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/31/2023] [Revised: 10/21/2023] [Indexed: 01/28/2024]
Abstract
The availability of an ever-expanding portfolio of 2D materials with rich internal degrees of freedom (spin, excitonic, valley, sublattice, and layer pseudospin) together with the unique ability to tailor heterostructures made layer by layer in a precisely chosen stacking sequence and relative crystallographic alignments, offers an unprecedented platform for realizing materials by design. However, the breadth of multi-dimensional parameter space and massive data sets involved is emblematic of complex, resource-intensive experimentation, which not only challenges the current state of the art but also renders exhaustive sampling untenable. To this end, machine learning, a very powerful data-driven approach and subset of artificial intelligence, is a potential game-changer, enabling a cheaper - yet more efficient - alternative to traditional computational strategies. It is also a new paradigm for autonomous experimentation for accelerated discovery and machine-assisted design of functional 2D materials and heterostructures. Here, the study reviews the recent progress and challenges of such endeavors, and highlight various emerging opportunities in this frontier research area.
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Affiliation(s)
- Bin Lu
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Yuze Xia
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Yuqian Ren
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Miaomiao Xie
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Liguo Zhou
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
| | - Giovanni Vinai
- Instituto Officina dei Materiali (IOM)‐CNRLaboratorio TASCTriesteI‐34149Italy
| | - Simon A. Morton
- Advanced Light Source (ALS)Lawrence Berkeley National LaboratoryBerkeleyCA94720USA
| | - Andrew T. S. Wee
- Department of Physics and Centre for Advanced 2D Materials (CA2DM) and Graphene Research Centre (GRC)National University of SingaporeSingapore117542Singapore
| | - Wilfred G. van der Wiel
- NanoElectronics Group, MESA+ Institute for Nanotechnology and BRAINS Center for Brain‐Inspired Nano SystemsUniversity of TwenteEnschede7500AEThe Netherlands
- Institute of PhysicsUniversity of Münster48149MünsterGermany
| | - Wen Zhang
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
- NanoElectronics Group, MESA+ Institute for Nanotechnology and BRAINS Center for Brain‐Inspired Nano SystemsUniversity of TwenteEnschede7500AEThe Netherlands
| | - Ping Kwan Johnny Wong
- ARTIST Lab for Artificial Electronic Materials and Technologies, School of MicroelectronicsNorthwestern Polytechnical UniversityXi'an710072P. R. China
- Yangtze River Delta Research Institute of Northwestern Polytechnical UniversityTaicang215400P. R. China
- NPU Chongqing Technology Innovation CenterChongqing400000P. R. China
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6
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Gui C, Zhang Z, Li Z, Luo C, Xia J, Wu X, Chu J. Deep learning analysis on transmission electron microscope imaging of atomic defects in two-dimensional materials. iScience 2023; 26:107982. [PMID: 37810254 PMCID: PMC10551659 DOI: 10.1016/j.isci.2023.107982] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Download PDF] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 10/10/2023] Open
Abstract
Defects are prevalent in two-dimensional (2D) materials due to thermal equilibrium and processing kinetics. The presence of various defect types can affect material properties significantly. With the development of the advanced transmission electron microscopy (TEM), the property-related structures could be investigated in multiple dimensions. It produces TEM datasets containing a large amount of information. Traditional data analysis is influenced by the subjectivity of researchers, and manual analysis is inefficient and imprecise. Recent developments in deep learning provide robust methods for the quantitative identification of defects in 2D materials efficiently and precisely. Taking advantage of big data, it breaks the limitations of TEM as a local characterization tool, making TEM an intelligent macroscopic analysis method. In this review, the recent developments in the TEM data analysis of defects in 2D materials using deep learning technology are summarized. Initially, an in-depth examination of the distinctions between TEM and natural images is presented. Subsequently, a comprehensive exploration of TEM data analysis ensues, encompassing denoising, point defects, line defects, planar defects, quantitative analysis, and applications. Furthermore, an exhaustive assessment of the significant obstacles encountered in the accurate identification of distinct structures is also provided.
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Affiliation(s)
- Chen Gui
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
| | - Zhihao Zhang
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
| | - Zongyi Li
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- JCET SEMICONDUCTOR INTEGRATION (SHAOXING) CO, LTD, Shaoxing, Zhejiang 312000, China
| | - Chen Luo
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China. Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
| | - Jiang Xia
- JCET SEMICONDUCTOR INTEGRATION (SHAOXING) CO, LTD, Shaoxing, Zhejiang 312000, China
| | - Xing Wu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
| | - Junhao Chu
- Shanghai Key Laboratory of Multidimensional Information Processing, School of Communication and Electronic Engineering, East China Normal University, Shanghai 200241, China
- State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
- Institute of Optoelectronics, Fudan University, Shanghai 200433, China. Frontier Institute of Chip and System, Fudan University, Shanghai 200433, China
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7
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Cho H, Sritharan M, Ju Y, Pujar P, Dutta R, Jang WS, Kim YM, Hong S, Yoon Y, Kim S. Se-Vacancy Healing with Substitutional Oxygen in WSe 2 for High-Mobility p-Type Field-Effect Transistors. ACS NANO 2023. [PMID: 37125893 DOI: 10.1021/acsnano.2c11567] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/19/2023]
Abstract
Transition-metal dichalcogenides possess high carrier mobility and can be scaled to sub-nanometer dimensions, making them viable alternative to Si electronics. WSe2 is capable of hole and electron carrier transport, making it a key component in CMOS logic circuits. However, since the p-type electrical performance of the WSe2-field effect transistor (FET) is still limited, various approaches are being investigated to circumvent this issue. Here, we formed a heterostructural multilayer WSe2 channel and solution-processed aluminum-doped zinc oxide (AZO) for compositional modification of WSe2 to obtain a device with excellent electrical properties. Supplying oxygen anions from AZO to the WSe2 channel eliminated subgap states through Se-deficiency healing, resulting in improved transport capacity. Se vacancies are known to cause mobility degradation due to scattering, which is mitigated through ionic compensation. Consequently, the hole mobility can reach high values, with a maximum of approximately 100 cm2/V s. Further, the transport behavior of the oxygen-doped WSe2-FET is systematically analyzed using density functional theory simulations and photoexcited charge collection spectroscopy measurements.
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Affiliation(s)
- Haewon Cho
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
| | - Mayuri Sritharan
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Younghyun Ju
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
| | - Pavan Pujar
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
- Department of Ceramic Engineering, Indian Institute of Technology (IIT-BHU), Varanasi, Uttar Pradesh 221005, India
| | - Riya Dutta
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
| | - Woo-Sung Jang
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon 16419, Republic of Korea
| | - Seongin Hong
- Department of Physics, Gachon University, Seongnam 13120, Republic of Korea
| | - Youngki Yoon
- Department of Electrical and Computer Engineering and Waterloo Institute for Nanotechnology (WIN), University of Waterloo, Waterloo, Ontario N2L 3G1, Canada
| | - Sunkook Kim
- School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon-Si, Gyeonggi-do 16419, Republic of Korea
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8
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Choudhary K, Gurunathan R, DeCost B, Biacchi A. AtomVision: A Machine Vision Library for Atomistic Images. J Chem Inf Model 2023; 63:1708-1722. [PMID: 36857727 DOI: 10.1021/acs.jcim.2c01533] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 03/03/2023]
Abstract
Computer vision techniques have immense potential for materials design applications. In this work, we introduce an integrated and general-purpose AtomVision library that can be used to generate and curate microscopy image (such as scanning tunneling microscopy and scanning transmission electron microscopy) data sets and apply a variety of machine learning techniques. To demonstrate the applicability of this library, we (1) establish an atomistic image data set of about 10 000 materials with large structural and chemical diversity, (2) develop and compare convolutional and atomistic line graph neural network models to classify the Bravais lattices, (3) demonstrate the application of fully convolutional neural networks using U-Net architecture to pixelwise classify atom versus background, (4) use a generative adversarial network for super resolution, (5) curate an image data set on the basis of natural language processing using an open-access arXiv data set, and (6) integrate the computational framework with experimental microscopy images for Rh, Fe3O4, and SnS systems. The AtomVision library is available at https://github.com/usnistgov/atomvision.
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Affiliation(s)
- Kamal Choudhary
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Ramya Gurunathan
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Brian DeCost
- Material Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
| | - Adam Biacchi
- Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, Maryland 20899, United States
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9
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Chen FXR, Lin CY, Siao HY, Jian CY, Yang YC, Lin CL. Deep learning based atomic defect detection framework for two-dimensional materials. Sci Data 2023; 10:91. [PMID: 36788235 PMCID: PMC9929095 DOI: 10.1038/s41597-023-02004-6] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/12/2022] [Accepted: 02/06/2023] [Indexed: 02/16/2023] Open
Abstract
Defects to popular two-dimensional (2D) transition metal dichalcogenides (TMDs) seriously lower the efficiency of field-effect transistor (FET) and depress the development of 2D materials. These atomic defects are mainly identified and researched by scanning tunneling microscope (STM) because it can provide precise measurement without harming the samples. The long analysis time of STM for locating defects in images has been solved by combining feature detection with convolutional neural networks (CNN). However, the low signal-noise ratio, insufficient data, and a large amount of TMDs members make the automatic defect detection system hard to be applied. In this study, we propose a deep learning-based atomic defect detection framework (DL-ADD) to efficiently detect atomic defects in molybdenum disulfide (MoS2) and generalize the model for defect detection in other TMD materials. We design DL-ADD with data augmentation, color preprocessing, noise filtering, and a detection model to improve detection quality. The DL-ADD provides precise detection in MoS2 (F2-scores is 0.86 on average) and good generality to WS2 (F2-scores is 0.89 on average).
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Affiliation(s)
- Fu-Xiang Rikudo Chen
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu City, Taiwan
| | - Chia-Yu Lin
- Department of Computer Science and Information Engineering, National Central University, Taoyuan City, Taiwan.
| | - Hui-Ying Siao
- Department of Electrical and Computer Engineering, University of California, Davis, CA, USA
| | - Cheng-Yuan Jian
- Department of Computer Science and Engineering, Yuan Ze University, Taoyuan City, Taiwan
| | - Yong-Cheng Yang
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu City, Taiwan
| | - Chun-Liang Lin
- Department of Electrophysics, National Yang Ming Chiao Tung University, Hsinchu City, Taiwan
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10
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Leist C, He M, Liu X, Kaiser U, Qi H. Deep-Learning Pipeline for Statistical Quantification of Amorphous Two-Dimensional Materials. ACS NANO 2022; 16:20488-20496. [PMID: 36484533 DOI: 10.1021/acsnano.2c06807] [Citation(s) in RCA: 2] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/17/2023]
Abstract
Aberration-corrected transmission electron microscopy enables imaging of two-dimensional (2D) materials with atomic resolution. However, dissecting the short-range-ordered structures in radiation-sensitive and amorphous 2D materials remains a significant challenge due to low atomic contrast and laborious manual evaluation. Here, we imaged carbon-based 2D materials with strong contrast, which is enabled by chromatic and spherical aberration correction at a low acceleration voltage. By constructing a deep-learning pipeline, atomic registry in amorphous 2D materials can be precisely determined, providing access to a full spectrum of quantitative data sets, including bond length/angle distribution, pair distribution function, and real-space polygon mapping. Accurate segmentation of micropores and surface contamination, together with robustness against background inhomogeneity, guaranteed the quantification validity in complex experimental images. The automated image analysis provides quantitative metrics with high efficiency and throughput, which may shed light on the structural understanding of short-range-ordered structures. In addition, the convolutional neural network can be readily generalized to crystalline materials, allowing for automatic defect identification and strain mapping.
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Affiliation(s)
- Christopher Leist
- Central Facility for Electron Microscopy, Materials Science Electron Microscopy, Universität Ulm, 89081Ulm, Germany
| | - Meng He
- College of Materials Science and Engineering, Xi'an Shiyou University, 710065Xi'an, People's Republic of China
| | - Xue Liu
- School of Materials Science and Engineering, Xi'an Jiaotong University, 710049Xi'an, People's Republic of China
| | - Ute Kaiser
- Central Facility for Electron Microscopy, Materials Science Electron Microscopy, Universität Ulm, 89081Ulm, Germany
| | - Haoyuan Qi
- Faculty of Chemistry and Food Chemistry & Center for Advancing Electronics Dresden (cfaed), Technische Universität Dresden, 01062Dresden, Germany
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11
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Botifoll M, Pinto-Huguet I, Arbiol J. Machine learning in electron microscopy for advanced nanocharacterization: current developments, available tools and future outlook. NANOSCALE HORIZONS 2022; 7:1427-1477. [PMID: 36239693 DOI: 10.1039/d2nh00377e] [Citation(s) in RCA: 14] [Impact Index Per Article: 7.0] [Reference Citation Analysis] [Abstract] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
In the last few years, electron microscopy has experienced a new methodological paradigm aimed to fix the bottlenecks and overcome the challenges of its analytical workflow. Machine learning and artificial intelligence are answering this call providing powerful resources towards automation, exploration, and development. In this review, we evaluate the state-of-the-art of machine learning applied to electron microscopy (and obliquely, to materials and nano-sciences). We start from the traditional imaging techniques to reach the newest higher-dimensionality ones, also covering the recent advances in spectroscopy and tomography. Additionally, the present review provides a practical guide for microscopists, and in general for material scientists, but not necessarily advanced machine learning practitioners, to straightforwardly apply the offered set of tools to their own research. To conclude, we explore the state-of-the-art of other disciplines with a broader experience in applying artificial intelligence methods to their research (e.g., high-energy physics, astronomy, Earth sciences, and even robotics, videogames, or marketing and finances), in order to narrow down the incoming future of electron microscopy, its challenges and outlook.
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Affiliation(s)
- Marc Botifoll
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain.
| | - Ivan Pinto-Huguet
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain.
| | - Jordi Arbiol
- Catalan Institute of Nanoscience and Nanotechnology (ICN2), CSIC and BIST, Campus UAB, Bellaterra, 08193 Barcelona, Catalonia, Spain.
- ICREA, Pg. Lluís Companys 23, 08010 Barcelona, Catalonia, Spain
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12
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Li H, Li R, Niu J, Gan K, He X. Defect chemistry of electrocatalysts for CO2 reduction. Front Chem 2022; 10:1067327. [DOI: 10.3389/fchem.2022.1067327] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/11/2022] [Accepted: 10/25/2022] [Indexed: 11/10/2022] Open
Abstract
Electrocatalytic CO2 reduction is a promising strategy for converting the greenhouse gas CO2 into high value-added products and achieving carbon neutrality. The rational design of electrocatalysts for CO2 reduction is of great significance. Defect chemistry is an important category for enhancing the intrinsic catalytic performance of electrocatalysts. Defect engineering breaks the catalytic inertia inherent in perfect structures by imparting unique electronic structures and physicochemical properties to electrocatalysts, thereby improving catalytic activity. Recently, various defective nanomaterials have been studied and show great potential in electrocatalytic CO2 reduction. There is an urgent need to gain insight into the effect of defects on catalytic performance. Here, we summarized the recent research advances on the design of various types of defects, including carbon-based materials (intrinsic defects, heteroatom doping and single-metal-atom sites) and metal compounds (vacancies, grain boundaries, and lattice defects). The major challenges and prospects of defect chemistry in electrocatalytic CO2 reduction are also proposed. This review is expected to be instructive in the development of defect engineering for CO2 reduction catalysts.
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Xu M, Kumar A, LeBeau JM. Towards Augmented Microscopy with Reinforcement Learning-Enhanced Workflows. MICROSCOPY AND MICROANALYSIS : THE OFFICIAL JOURNAL OF MICROSCOPY SOCIETY OF AMERICA, MICROBEAM ANALYSIS SOCIETY, MICROSCOPICAL SOCIETY OF CANADA 2022; 28:1-9. [PMID: 36062363 DOI: 10.1017/s1431927622012193] [Citation(s) in RCA: 5] [Impact Index Per Article: 2.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Here, we report a case study implementation of reinforcement learning (RL) to automate operations in the scanning transmission electron microscopy workflow. To do so, we design a virtual, prototypical RL environment to test and develop a network to autonomously align the electron beam position without prior knowledge. Using this simulator, we evaluate the impact of environment design and algorithm hyperparameters on alignment accuracy and learning convergence, showing robust convergence across a wide hyperparameter space. Additionally, we deploy a successful model on the microscope to validate the approach and demonstrate the value of designing appropriate virtual environments. Consistent with simulated results, the on-microscope RL model achieves convergence to the goal alignment after minimal training. Overall, the results highlight that by taking advantage of RL, microscope operations can be automated without the need for extensive algorithm design, taking another step toward augmenting electron microscopy with machine learning methods.
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Affiliation(s)
- Michael Xu
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - Abinash Kumar
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
| | - James M LeBeau
- Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
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Lee K, Park J, Choi S, Lee Y, Lee S, Jung J, Lee JY, Ullah F, Tahir Z, Kim YS, Lee GH, Kim K. STEM Image Analysis Based on Deep Learning: Identification of Vacancy Defects and Polymorphs of MoS 2. NANO LETTERS 2022; 22:4677-4685. [PMID: 35674452 DOI: 10.1021/acs.nanolett.2c00550] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/15/2023]
Abstract
Scanning transmission electron microscopy (STEM) is an indispensable tool for atomic-resolution structural analysis for a wide range of materials. The conventional analysis of STEM images is an extensive hands-on process, which limits efficient handling of high-throughput data. Here, we apply a fully convolutional network (FCN) for identification of important structural features of two-dimensional crystals. ResUNet, a type of FCN, is utilized in identifying sulfur vacancies and polymorph types of MoS2 from atomic resolution STEM images. Efficient models are achieved based on training with simulated images in the presence of different levels of noise, aberrations, and carbon contamination. The accuracy of the FCN models toward extensive experimental STEM images is comparable to that of careful hands-on analysis. Our work provides a guideline on best practices to train a deep learning model for STEM image analysis and demonstrates FCN's application for efficient processing of a large volume of STEM data.
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Affiliation(s)
- Kihyun Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Jinsub Park
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Soyeon Choi
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Yangjin Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Sol Lee
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
| | - Joowon Jung
- Department of Physics, Yonsei University, Seoul 03722, Korea
| | - Jong-Young Lee
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Korea
| | - Farman Ullah
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, Korea
| | - Zeeshan Tahir
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, Korea
| | - Yong Soo Kim
- Department of Physics and Energy Harvest Storage Research Center, University of Ulsan, Ulsan 44610, Korea
| | - Gwan-Hyoung Lee
- Department of Material Science and Engineering, Seoul National University, Seoul 08826, Korea
- Research Institute of Advanced Materials, Seoul National University, Seoul 08826, Korea
- Institute of Engineering Research, Seoul National University, Seoul 08826, Korea
- Institute of Applied Physics, Seoul National University, Seoul 08826, Korea
| | - Kwanpyo Kim
- Department of Physics, Yonsei University, Seoul 03722, Korea
- Center for Nanomedicine, Institute for Basic Science (IBS), Seoul 03722, Korea
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Kim YH, Yang SH, Jeong M, Jung MH, Yang D, Lee H, Moon T, Heo J, Jeong HY, Lee E, Kim YM. Hybrid Deep Learning Crystallographic Mapping of Polymorphic Phases in Polycrystalline Hf 0.5 Zr 0.5 O 2 Thin Films. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2022; 18:e2107620. [PMID: 35373528 DOI: 10.1002/smll.202107620] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Subscribe] [Scholar Register] [Received: 12/08/2021] [Revised: 03/03/2022] [Indexed: 06/14/2023]
Abstract
By controlling the configuration of polymorphic phases in high-k Hf0.5 Zr0.5 O2 thin films, new functionalities such as persistent ferroelectricity at an extremely small scale can be exploited. To bolster the technological progress and fundamental understanding of phase stabilization (or transition) and switching behavior in the research area, efficient and reliable mapping of the crystal symmetry encompassing the whole scale of thin films is an urgent requisite. Atomic-scale observation with electron microscopy can provide decisive information for discriminating structures with similar symmetries. However, it often demands multiple/multiscale analysis for cross-validation with other techniques, such as X-ray diffraction, due to the limited range of observation. Herein, an efficient and automated methodology for large-scale mapping of the crystal symmetries in polycrystalline Hf0.5 Zr0.5 O2 thin films is developed using scanning probe-based diffraction and a hybrid deep convolutional neural network at a 2 nm2 resolution. The results for the doped hafnia films are fully proven to be compatible with atomic structures revealed by microscopy imaging, not requiring intensive human input for interpretation.
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Affiliation(s)
- Young-Hoon Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Sang-Hyeok Yang
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Myoungho Jeong
- Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, 16678, Republic of Korea
| | - Min-Hyoung Jung
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Daehee Yang
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
| | - Hyangsook Lee
- Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, 16678, Republic of Korea
| | - Taehwan Moon
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, 16678, Republic of Korea
| | - Jinseong Heo
- Beyond Silicon Lab, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, 16678, Republic of Korea
| | - Hu Young Jeong
- Graduate School of Semiconductor Materials and Devices Engineering, Ulsan National Institute of Science and Technology (UNIST), Ulsan, 44919, Republic of Korea
| | - Eunha Lee
- Analytical Engineering Group, Samsung Advanced Institute of Technology (SAIT), Samsung Electronics, Suwon, 16678, Republic of Korea
| | - Young-Min Kim
- Department of Energy Science, Sungkyunkwan University (SKKU), Suwon, 16419, Republic of Korea
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