Electrical Pumping of Perovskite Diodes: Toward Stimulated Emission

Halide Perovskite Thin Film Lasing Mode Control

Metal halide perovskite semiconductors have emerged as highly efficient amplifying materials; to ensure practical applicability, it is important to have precise control over the spectral and polarization characteristics of lasing emission. In this study, we present effective strategies for manipulating single- and multimode lasing from surface-emitting and optically pumped perovskite distributed feedback lasers. We show that cladding structures can be made to modify the optical properties of guided transverse electric and magnetic modes within the gain medium. This leads to spectral tuning of multipeak lasing emission and the generation of linear polarization modes. Our results are supported with a comprehensive multilayer slab waveguide model and confirmed with two different perovskite materials: methylammonium lead iodide and cesium lead bromide.

Toward Thin-Film Laser Diodes with Metal Halide Perovskites

Metal halide perovskite semiconductors hold a strong promise for enabling thin-film laser diodes. Perovskites distinguish themselves from other non-epitaxial media primarily through their ability to maintain performance at high current densities, which is a critical requirement for achieving injection lasing. Coming in a wide range of varieties, numerous perovskites delivered low-threshold optical amplified spontaneous emission and optically pumped lasing when combined with a suitable optical cavity. A progression toward electrically pumped lasing requires the development of efficient light-emitting structures with reduced optical losses and high radiative efficiency at lasing-level current densities. This involves a set of important trade-offs in terms of material choice, stack and waveguide design, as well as resonator integration. In this Perspective, the key milestones are highlighted that have been achieved in the study of passive optical waveguides and light-emitting diodes, and these learnings are translated toward more complex laser diode architectures. Finally, a novel resonator integration route is proposed that is capable of relaxing optical and electrical design constraints.

Exploring Epitaxial Structures for Electrically Pumped Perovskite Lasers: A Study of CsPb(Br,I)3 Based on the Ab Initio Bethe-Salpeter Equation

Halide perovskites are widely used as components of electronic and optoelectronic devices such as solar cells, light-emitting diodes (LEDs), optically pumped lasers, field-effect transistors, photodetectors, and γ-detectors. Despite this wide range of applications, the construction of an electrically pumped perovskite laser remains challenging. In this paper, we numerically justify that mixing two perovskite compounds with different halide elements can lead to optical properties suitable for electrical pumping. As a reference, the chosen model material was CsPbBr3, whose performance as a part of lasers has been widely recognised, with some Br atoms substituted by I at specific sites. In particular, a strong enhancement of the low-energy absorption peaks has been obtained using the ab initio Bethe-Salpeter equation. Based on these results, we propose specific architectures of ordered doping that could be realised by epitaxial growth. Efficient light emission from the bottom of the conduction band is expected.

Electrically driven organic laser using integrated OLED pumping

Organic semiconductors are carbon-based materials that combine optoelectronic properties with simple fabrication and the scope for tuning by changing their chemical structure1-3. They have been successfully used to make organic light-emitting diodes2,4,5 (OLEDs, now widely found in mobile phone displays and televisions), solar cells1, transistors6 and sensors7. However, making electrically driven organic semiconductor lasers is very challenging8,9. It is difficult because organic semiconductors typically support only low current densities, suffer substantial absorption from injected charges and triplets, and have additional losses due to contacts10,11. In short, injecting charges into the gain medium leads to intolerable losses. Here we take an alternative approach in which charge injection and lasing are spatially separated, thereby greatly reducing losses. We achieve this by developing an integrated device structure that efficiently couples an OLED, with exceptionally high internal-light generation, with a polymer distributed feedback laser. Under the electrical driving of the integrated structure, we observe a threshold in light output versus drive current, with a narrow emission spectrum and the formation of a beam above the threshold. These observations confirm lasing. Our results provide an organic electronic device that has not been previously demonstrated, and show that indirect electrical pumping by an OLED is a very effective way of realizing an electrically driven organic semiconductor laser. This provides an approach to visible lasers that could see applications in spectroscopy, metrology and sensing.

Photonic metamaterial with a subwavelength electrode pattern

The next generation of tunable photonics requires highly conductive and light inert interconnects that enable fast switching of phase, amplitude, and polarization modulators without reducing their efficiency. As such, metallic electrodes should be avoided, as they introduce significant parasitic losses. Transparent conductive oxides, on the other hand, offer reduced absorption due to their high bandgap and good conductivity due to their relatively high carrier concentration. Here, we present a metamaterial that enables electrodes to be in contact with the light active part of optoelectronic devices without the accompanying metallic losses and scattering. To this end, we use transparent conductive oxides and refractive index matched dielectrics as the metamaterial constituents. We present the metamaterial construction together with various characterization techniques that confirm the desired optical and electrical properties.

Toward Nonepitaxial Laser Diodes

Thin-film organic, colloidal quantum dot, and metal halide perovskite semiconductors are all being pursued in the quest for a wavelength-tunable diode laser technology that does not require epitaxial growth on a traditional semiconductor substrate. Despite promising demonstrations of efficient light-emitting diodes and low-threshold optically pumped lasing in each case, there are still fundamental and practical barriers that must be overcome to reliably achieve injection lasing. This review outlines the historical development and recent advances of each material system on the path to a diode laser. Common challenges in resonator design, electrical injection, and heat dissipation are highlighted, as well as the different optical gain physics that make each system unique. The evidence to date suggests that continued progress for organic and colloidal quantum dot laser diodes will likely hinge on the development of new materials or indirect pumping schemes, while improvements in device architecture and film processing are most critical for perovskite lasers. In all cases, systematic progress will require methods that can quantify how close new devices get with respect to their electrical lasing thresholds. We conclude by discussing the current status of nonepitaxial laser diodes in the historical context of their epitaxial counterparts, which suggests that there is reason to be optimistic for the future.

Localized Bound Multiexcitons in Engineered Quasi-2D Perovskites Grains at Room Temperature for Efficient Lasers

Reducing the excitation threshold to minimize the Joule heating is critical for the realization of perovskite laser diodes. Although bound excitons are promising for low threshold laser, how to generate them at room temperature for laser applications is still unclear in quasi-2D perovskite-based devices. In this work, via engineering quasi-2D perovskite PEA₂ (CH₃ NH₃ )_{n -1} Pb_n Br_{3 n +1} microscopic grains by the anti-solvent method, room-temperature multiexciton radiative recombination is successfully demonstrated at a remarkably low pump density of 0.97 µJ cm^-2 , which is only one-fourth of that required in 2D CdSe nanosheets. In addition, the well-defined translational momentum in quasi-2D perovskite grains can restrict the Auger recombination which is detrimental to radiative emission. Furthermore, the quasi-2D perovskite grains are favorable for increasing binding energies of excitons and biexcitons and so as the related radiative recombination. Consequently, the prepared <n = 8> phase quasi-2D perovskite film renders a threshold of room-temperature stimulated emission as low as 13.7 µJ cm^-2 , reduced by 58.6% relative to the amorphous counterpart with larger grains. The findings in this work are expected to facilitate the development of solution-processable perovskite multiexcitonic laser diodes.

Enhancement of Amplified Spontaneous Emission by Electric Field in CsPbBr3 Perovskites

Perovskite gain materials can sustain continuous-wave lasing at room-temperature. A first step toward the unachieved goal of electrically excited lasing would be an improvement in gain when electrical stimulation is added to the optical. However, to date, electrical stimulation supplementing optical has reduced gain performance. We find that amplified spontaneous emission (ASE) in a CsPbBr₃ perovskite light-emitting diode (LED) held under invariant subthreshold optical excitation can be turned on/off by the addition/removal of an electric field. A positive bias voltage leads to a factor of 3 reduction in the optical ASE threshold, the cause of which can be attributed to an enhancement of the radiative rate. The slow components (10 s time scale) of the modulation in the photoluminescence and ASE when the voltage is changed suggest that the relocation of mobile ions trigger the increased radiative rate and observed lowering of ASE thresholds.

Bright and stable perovskite light-emitting diodes in the near-infrared range

Perovskite light-emitting diodes (LEDs) have attracted broad attention due to their rapidly increasing external quantum efficiencies (EQEs)1-15. However, most high EQEs of perovskite LEDs are reported at low current densities (<1 mA cm-2) and low brightness. Decrease in efficiency and rapid degradation at high brightness inhibit their practical applications. Here, we demonstrate perovskite LEDs with exceptional performance at high brightness, achieved by the introduction of a multifunctional molecule that simultaneously removes non-radiative regions in the perovskite films and suppresses luminescence quenching of perovskites at the interface with charge-transport layers. The resulting LEDs emit near-infrared light at 800 nm, show a peak EQE of 23.8% at 33 mA cm-2 and retain EQEs more than 10% at high current densities of up to 1,000 mA cm-2. In pulsed operation, they retain EQE of 16% at an ultrahigh current density of 4,000 mA cm-2, along with a high radiance of more than 3,200 W s-1 m-2. Notably, an operational half-lifetime of 32 h at an initial radiance of 107 W s-1 m-2 has been achieved, representing the best stability for perovskite LEDs having EQEs exceeding 20% at high brightness levels. The demonstration of efficient and stable perovskite LEDs at high brightness is an important step towards commercialization and opens up new opportunities beyond conventional LED technologies, such as perovskite electrically pumped lasers.

Optical Properties of Perovskite-Organic Multiple Quantum Wells

A comprehensive study of the optical properties of CsPbBr₃ perovskite multiple quantum wells (MQW) with organic barrier layers is presented. Quantum confinement is observed by a blue-shift in absorption and emission spectra with decreasing well width and agrees well with simulations of the confinement energies. A large increase of emission intensity with thinner layers is observed, with a photoluminescence quantum yield up to 32 times higher than that of bulk layers. Amplified spontaneous emission (ASE) measurements show very low thresholds down to 7.3 µJ cm^-2 for a perovskite thickness of 8.7 nm, significantly lower than previously observed for CsPbBr₃ thin-films. With their increased photoluminescence efficiency and low ASE thresholds, MQW structures with CsPbBr₃ are excellent candidates for high-efficiency perovskite-based LEDs and lasers.

Transfer Printing of Perovskite Whispering Gallery Mode Laser Cavities by Thermal Release Tape

The outstanding optoelectrical properties and high-quality factor of whispering gallery mode perovskite nanocavities make it attractive for applications in small lasers. However, efforts to make lasers with better performance have been hampered by the lack of efficient methods for the synthesis and transfer of perovskite nanocavities on desired substrate at quality required for applications. Here, we report transfer printing of perovskite nanocavities grown by chemical vapor deposition from mica substrate onto SiO₂ substrate. Transferred perovskite nanocavity has an RMS roughness of ~ 1.2 nm and no thermal degradation in thermal release process. We further use femtosecond laser to excite a transferred perovskite nanocavity and measures its quality factor as high as 2580 and a lasing threshold of 27.89 μJ/cm² which is almost unchanged as compared with pristine perovskite nanocavities. This method represents a significant step toward the realization of perovskite nanolasers with smaller sizes and better heat management as well as application in optoelectronic devices.

Effects of photon recycling and scattering in high-performance perovskite solar cells

Efficient external radiation is essential for solar cells to achieve high power conversion efficiency (PCE). The classical limit of 1/2n² (n, refractive index) for electroluminescence quantum efficiency (ELQE) has recently been approached by perovskite solar cells (PSCs). Photon recycling (PR) and light scattering can provide an opportunity to surpass this limit. We investigate the role of PR and scattering in practical device operation using a radiative PSC with an ELQE (13.7% at 1 sun) that significantly surpasses the classical limit (7.4%). We experimentally analyze the contributions of PR and scattering to this strong radiation. A novel optical model reveals an increase of 39 mV in the voltage of our PSC. This analysis can provide design principles for future PSCs to approach the Shockley-Queisser efficiency limit.

Nanosecond-Pulsed Perovskite Light-Emitting Diodes at High Current Density

While metal-halide perovskite light-emitting diodes (PeLEDs) hold the potential for a new generation of display and lighting technology, their slow operation speed and response time limit their application scope. Here, high-speed PeLEDs driven by nanosecond electrical pulses with a rise time of 1.2 ns are reported with a maximum radiance of approximately 480 kW sr^-1  m^-2 at 8.3 kA cm^-2 , and an external quantum efficiency (EQE) of 1% at approximately 10 kA cm^-2 , through improved device configuration designs and material considerations. Enabled by the fast operation of PeLEDs, the temporal response provides access to transient charge carrier dynamics under electrical excitation, revealing several new electroluminescence quenching pathways. Finally, integrated distributed feedback (DFB) gratings are explored, which facilitate more directional light emission with a maximum radiance of approximately 1200 kW sr^-1 m^-2 at 8.5 kA cm^-2 , a more than two-fold enhancement to forward radiation output.