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Gao C, Wang X, Yang Q, Gao C, Wang X, Liu X. Improving Hybrid Tin Halide Films of Lead-Free Perovskite Solar Cells with a Volatile Additive of Dipropyl Sulfide. J Phys Chem Lett 2024; 15:8896-8902. [PMID: 39171643 DOI: 10.1021/acs.jpclett.4c02032] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 08/23/2024]
Abstract
Lead-free perovskite solar cells with hybrid tin halides (Sn-PVKs) as harvesters have attracted attention with respect to eliminating the contamination of conventional hybrid lead halides. However, Sn-PVK films usually have inferior performance due to rapid crystallization and uncontrollable morphology. Moreover, Sn2+ ions suffer from irreversible oxidation that results in self-doping and device instability. Additive engineering is a key strategy for improving the quality of Sn-PVK films, but solid residues of additives could degrade the transport-recombination process. In this work, dipropyl sulfide (DPS) was introduced as a volatile additive into the precursor solution, and no residue exists in the Sn-PVK films after thermal annealing. The coordinating ability of DPS molecules stabilized Sn2+ ions to form the intermediate complex, which retards the crystallization and oxidation of Sn-PVK films. Consequently, the power conversion efficiencies of devices increase from 11.0% to 12.9% with less recombination and a lower leakage current, and the stability of the devices is improved simultaneously.
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Affiliation(s)
- Can Gao
- Institute of Atomic and Molecular Physics, Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy, Jilin University, Changchun 130012, China
| | - Xinyao Wang
- Institute of Atomic and Molecular Physics, Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy, Jilin University, Changchun 130012, China
| | - Qingyun Yang
- Institute of Atomic and Molecular Physics, Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy, Jilin University, Changchun 130012, China
| | - Chunxiao Gao
- State Key Laboratory for Superhard Materials, Jilin University, Changchun 130012, China
| | - Xiaochun Wang
- School of Physics Science and Information Technology, Liaocheng University, Liaocheng 252000, China
| | - Xizhe Liu
- Institute of Atomic and Molecular Physics, Jilin Provincial Key Laboratory of Applied Atomic and Molecular Spectroscopy, Jilin University, Changchun 130012, China
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2
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Wang L, Miao Q, Wang D, Zhang Z, Chen M, Bi H, Liu J, Baranwal AK, Kapil G, Sanehira Y, Kitamura T, Shen Q, Ma T, Hayase S. Ternary Passivation for Enhanced Carrier Transport and Recombination Suppression in Highly Efficient Sn-Based Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2404026. [PMID: 39118554 DOI: 10.1002/smll.202404026] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 05/22/2024] [Revised: 07/09/2024] [Indexed: 08/10/2024]
Abstract
The exploration of nontoxic Sn-based perovskites as a viable alternative to their toxic Pb-based counterparts has garnered increased attention. However, the power conversion efficiency of Sn-based perovskite solar cells lags significantly behind their Pb-based counterparts. This study presents a ternary passivation strategy aimed at enhancing device performance, employing [6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM), poly(3-hexylthiophene) (P3HT), and indene C60 bisadduct (ICBA). These components play crucial roles in managing energy levels and enhancing carrier transportation, respectively. The results reveal that the introduction of the ternary system leads to improvements in carrier collection and transportation, accompanied by a suppression of the recombination process. Ultimately, the champion device achieves a remarkable performance with an efficiency of 14.64%. Notably, the device also exhibits robust operational and long-term stored stability.
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Affiliation(s)
- Liang Wang
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Qingqing Miao
- Beijing Key Laboratory of Ionic Liquids Clean Process, CAS Key Laboratory of Green Process and Engineering, Institute of Process Engineering, Chinese Academy of Sciences, Beijing, 100190, P. R. China
- Longzihu New Energy Laboratory, Zhengzhou Institute of Emerging Industrial Technology, Henan University, Zhengzhou, 450000, P. R. China
- Langfang Technological Centre of Green Industry, Langfang, 065001, P. R. China
| | - Dandan Wang
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Zheng Zhang
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Mengmeng Chen
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Huan Bi
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Jiaqi Liu
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Ajay Kumar Baranwal
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Gaurav Kapil
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Yoshitaka Sanehira
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Takeshi Kitamura
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Qing Shen
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
| | - Tingli Ma
- Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology, Fukuoka, 804-8550, Japan
| | - Shuzi Hayase
- info-Powered Energy System Research Center (i-PERC), The University of Electro-Communications, Tokyo, 182-8585, Japan
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3
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Zhang Y, Cao K, Yang M, Hong H, Shen Y, Ning H, Xia J, Chen S. In Situ Polymerization Strategy for Improving the Stability of Sn-Based Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2024; 16:32240-32248. [PMID: 38877977 DOI: 10.1021/acsami.4c04280] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/27/2024]
Abstract
Sn-based perovskite solar cells (Sn-PSCs) have received increasing attention due to their nontoxicity and potentially high efficiency. However, the poor stability of Sn2+ ions remains a major problem in achieving stable and efficient Sn-PSCs. Herein, an in situ polymerization strategy using allyl thiourea and ethylene glycol dimethacrylate as cross-linking agents in the Sn-based perovskite precursor is proposed to improve the device performance of Sn-PSCs. The C═S and N-H bonds of the cross-linkers are able to coordinate with SnI2 and inhibit the oxidation of Sn2+, thereby reducing defect density and improving the stability of Sn-based perovskite films. The high quality of the perovskite film induced by the in situ polymerization strategy delivers an improved power conversion efficiency (PCE) from 7.50 to 9.22%. More importantly, the unpackaged device with cross-linkers maintained more than 70% of the initial PCE after 150 h of AM 1.5G light soaking in a nitrogen atmosphere and 80% of the initial PCE after 1800 h in dark conditions. This work demonstrates that the in situ polymerization strategy is an effective method to enhance the stability of Sn-based perovskite films and devices.
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Affiliation(s)
- Yibo Zhang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Kun Cao
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Ming Yang
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Hui Hong
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Yifan Shen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Haosong Ning
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Junmin Xia
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
| | - Shufen Chen
- State Key Laboratory of Organic Electronics and Information Displays & Institute of Advanced Materials (IAM), Nanjing University of Posts & Telecommunications, Nanjing 210023, China
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4
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Ma X, Zhang Y, Zhou J, Liu L, Ju M, Wang N. Mitigating Surface Defects in Tin-Based Perovskite Films with α-Tocopherol for Enhanced Photovoltaic Performance. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307373. [PMID: 38012527 DOI: 10.1002/smll.202307373] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/24/2023] [Revised: 10/26/2023] [Indexed: 11/29/2023]
Abstract
Surface defects in tin-based perovskite films disrupt the periodic arrangement of atoms in crystals, making surface atoms more susceptible to interactions with water and oxygen molecules in the surrounding environment. The diffusion of oxygen ions into the perovskite interior leads to the formation of severe bulk defects, which compromises the performance of tin-based perovskite solar cells (PSCs). As a result, surface defects are recognized as the primary source of degradation and require special attention. In this study, α-Tocopherol (also known as vitamin E) into tin-based perovskite films is introduced. Experimental results show that because of its larger volume, α-Tocopherol does not enter the perovskite lattice. Instead, it forms van der Waals and hydrogen bond interactions with the formamidine ion (FA+) and the [SnI6]4- octahedron at the perovskite terminals. Through α-Tocopherol passivation, both surface and interior oxidation of the perovskite are significantly suppressed as α-Tocopherol firmly embeds itself on the perovskite surface. Density functional theory analysis confirms the inhibition of I─Sn antisite defects (ISn) and Sn interstitial defects (Sni), which possess deep trap states within the bandgap. Ultimately, it is demonstrated that α-Tocopherol enhances the power conversion efficiency (PCE) from 9.19% to 13.14% and prolongs the lifetime of tin-based PSCs to over 50 days.
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Affiliation(s)
- Xue Ma
- College of Physics, Jilin University, Changchun, 130012, China
| | - Yu Zhang
- College of Physics, Jilin University, Changchun, 130012, China
| | - Jianheng Zhou
- College of Physics, Jilin University, Changchun, 130012, China
| | - Lang Liu
- College of Physics, Jilin University, Changchun, 130012, China
| | - Minggang Ju
- School of Physics, Southeast University, Nanjing, 211189, China
| | - Ning Wang
- College of Physics, Jilin University, Changchun, 130012, China
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Yu B, Sun Y, Zhang J, Wang K, Yu H. Synergetic Regulation of Interface Defects and Carriers Dynamics for High-Performance Lead-Free Perovskite Solar Cells. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2307025. [PMID: 37941475 DOI: 10.1002/smll.202307025] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 08/15/2023] [Revised: 10/14/2023] [Indexed: 11/10/2023]
Abstract
Severe nonradiative recombination and open-circuit voltage loss triggered by high-density interface defects greatly restrict the continuous improvement of Sn-based perovskite solar cells (Sn-PVSCs). Herein, a novel amphoteric semiconductor, O-pivaloylhydroxylammonium trifluoromethanesulfonate (PHAAT), is developed to manage interface defects and carrier dynamics of Sn-PVSCs. The amphiphilic ionic modulators containing multiple Lewis-base functional groups can synergistically passivate anionic and cationic defects while coordinating with uncoordinated Sn2+ to compensate for surface charge and alleviate the Sn2+ oxidation. Especially, the sulfonate anions raise the energy barrier of surface oxidation, relieve lattice distortion, and inhibit nonradiative recombination by passivating Sn-related and I-related deep-level defects. Furthermore, the strong coupling between PHAAT and Sn perovskite induces the transition of the surface electronic state from p-type to n-type, thus creating an extra back-surface field to accelerate electron extraction. Consequently, the PHAAT-treated device exhibits a champion efficiency of 13.94% with negligible hysteresis. The device without any encapsulation maintains 94.7% of its initial PCE after 2000 h of storage and 91.6% of its initial PCE after 1000 h of continuous illumination. This work provides a reliable strategy to passivate interface defects and construct p-n homojunction to realize efficient and stable Sn-based perovskite photovoltaic devices.
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Affiliation(s)
- Bo Yu
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong, 510640, China
| | - Yapeng Sun
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong, 510640, China
| | - Jiankai Zhang
- International School of Microelectronics, Dongguan University of Technology, Dongguan, Guangdong, 523808, China
| | - Kai Wang
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong, 510640, China
| | - Huangzhong Yu
- School of Physics and Optoelectronics, South China University of Technology, Guangzhou, Guangdong, 510640, China
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Yang S, Wen J, Wu Y, Zhu H, Liu A, Hu Y, Noh YY, Chu J, Li W. Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024; 20:e2304626. [PMID: 37641178 DOI: 10.1002/smll.202304626] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/01/2023] [Revised: 08/10/2023] [Indexed: 08/31/2023]
Abstract
Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.
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Affiliation(s)
- Shuzhang Yang
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Jincheng Wen
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Yanqiu Wu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
| | - Huihui Zhu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Ao Liu
- Department of Chemistry, Northwestern University, Evanston, Illinois, 60208, USA
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Yuanyuan Hu
- Changsha Semiconductor Technology and Application Innovation Research Institute, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
| | - Yong-Young Noh
- Department of Chemical Engineering, Pohang University of Science and Technology, 77 Cheongam-Ro, Nam-Gu, Pohang, 37673, Republic of Korea
| | - Junhao Chu
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
| | - Wenwu Li
- State Key Laboratory of Photovoltaic Science and Technology, Department of Materials Science, Fudan University, Shanghai, 200433, China
- Shanghai Frontiers Science Research Base of Intelligent Optoelectronics and Perception, Institute of Optoelectronics, Fudan University, Shanghai, 200433, China
- Key Laboratory of Polar Materials and Devices (Ministry of Education), East China Normal University, Shanghai, 200241, China
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7
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Wang Y, Ye S, Lim JWM, Giovanni D, Feng M, Fu J, Krishnamoorthy HNS, Zhang Q, Xu Q, Cai R, Sum TC. Carrier multiplication in perovskite solar cells with internal quantum efficiency exceeding 100. Nat Commun 2023; 14:6293. [PMID: 37813878 PMCID: PMC10562407 DOI: 10.1038/s41467-023-41758-w] [Citation(s) in RCA: 1] [Impact Index Per Article: 1.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 07/15/2023] [Accepted: 09/18/2023] [Indexed: 10/11/2023] Open
Abstract
Carrier multiplication (CM) holds great promise to break the Shockley-Queisser limit of single junction photovoltaic cells. Despite compelling spectroscopic evidence of strong CM effects in halide perovskites, studies in actual perovskite solar cells (PSCs) are lacking. Herein, we reconcile this knowledge gap using the testbed Cs0.05FA0.5MA0.45Pb0.5Sn0.5I3 system exhibiting efficient CM with a low threshold of 2Eg (~500 nm) and high efficiency of 99.4 ± 0.4%. Robust CM enables an unbiased internal quantum efficiency exceeding 110% and reaching as high as 160% in the best devices. Importantly, our findings inject fresh insights into the complex interplay of various factors (optical and parasitic absorption losses, charge recombination and extraction losses, etc.) undermining CM contributions to the overall performance. Surprisingly, CM effects may already exist in mixed Pb-Sn PSCs but are repressed by its present architecture. A comprehensive redesign of the existing device configuration is needed to leverage CM effects for next-generation PSCs.
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Affiliation(s)
- Yue Wang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Senyun Ye
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Jia Wei Melvin Lim
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - David Giovanni
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Minjun Feng
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Jianhui Fu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Harish N S Krishnamoorthy
- Centre for Disruptive Photonic Technologies, TPI, School of Physical and Mathematical Sciences, Nanyang Technological University, Singapore, 637371, Singapore
- Tata Institute of Fundamental Research-Hyderabad, Sy. No. 36/P, Gopanapally Village, Serilingampally Mandal, Hyderabad, 500046, India
| | - Qiannan Zhang
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Qiang Xu
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Rui Cai
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore
| | - Tze Chien Sum
- Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, Nanyang Technological University, 21 Nanyang Link, Singapore, 637371, Singapore.
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8
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Wang Q, Qiu P, Luo X, Zheng C, Wang S, Ren X, Gao J, Lu X, Gao X, Shui L, Wu S, Liu JM. Mutually Tuned Dual Additive Engineering Synergistically Enhances the Photovoltaic Performance of Tin-Based Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2023; 15:45064-45075. [PMID: 37710994 DOI: 10.1021/acsami.3c11009] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 09/16/2023]
Abstract
Tin-based perovskite solar cells (T-PSCs) have become the star photovoltaic products in recent years due to their low environmental toxicity and superior photovoltaic performance. However, the easy oxidation of Sn2+ and the energy level mismatch between the perovskite film and charge transport layer limit its efficiency. In order to regulate the microstructure and photoelectric properties of tin-based perovskite films to enhance the efficiency and stability of T-PSCs, guanidinium bromide (GABr) and organic Lewis-based additive methylamine cyanate (MAOCN) are introduced into the FA0.9PEA0.1SnI3-based perovskite precursor. A series of characterizations show that the interactions between additive molecules and perovskite mutually reconcile to improve the photovoltaic performance of T-PSCs. The introduction of GABr can adjust the band gap of the perovskite film and energy level alignment of T-PSCs. They significantly increase the open-circuit voltage (Voc). The MAOCN material can form hydrogen bonds with SnI2 in the precursor, which can inhibit the oxidation of Sn2+ and significantly improve the short-circuit current density (Jsc). The synergistic modulation of the dual additives reduces the trap-state density and improves photovoltaic performance, resulting in an increased champion efficiency of 9.34 for 5.22% of the control PSCs. The unencapsulated T-PSCs with GABr and MAOCN dual additives prepared in the optimized process can retain more than 110% of their initial efficiency after aging for 1750 h in a nitrogen glovebox, but the control PSCs maintain only 50% of their initial efficiency kept in the same conditions. This work provides a new perspective to further improve the efficiency and stability of T-PSCs.
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Affiliation(s)
| | | | | | | | | | | | | | | | | | | | | | - Jun-Ming Liu
- Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
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9
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Liu G, Jiang X, Feng W, Yang G, Chen X, Ning Z, Wu WQ. Synergic Electron and Defect Compensation Minimizes Voltage Loss in Lead-Free Perovskite Solar Cells. Angew Chem Int Ed Engl 2023; 62:e202305551. [PMID: 37325943 DOI: 10.1002/anie.202305551] [Citation(s) in RCA: 12] [Impact Index Per Article: 12.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 04/20/2023] [Revised: 06/15/2023] [Accepted: 06/16/2023] [Indexed: 06/17/2023]
Abstract
Sn perovskite solar cells have been regarded as one of the most promising alternatives to the Pb-based counterparts due to their low toxicity and excellent optoelectronic properties. However, the Sn perovskites are notorious to feature heavy p-doping characteristics and possess abundant vacancy defects, which result in under-optimized interfacial energy level alignment and severe nonradiative recombination. Here, we reported a synergic "electron and defect compensation" strategy to simultaneously modulate the electronic structures and defect profiles of Sn perovskites via incorporating a traced amount (0.1 mol %) of heterovalent metal halide salts. Consequently, the doping level of modified Sn perovskites was altered from heavy p-type to weak p-type (i.e. up-shifting the Fermi level by ∼0.12 eV) that determinately reducing the barrier of interfacial charge extraction and effectively suppressing the charge recombination loss throughout the bulk perovskite film and at relevant interfaces. Pioneeringly, the resultant device modified with electron and defect compensation realized a champion efficiency of 14.02 %, which is ∼46 % higher than that of control device (9.56 %). Notably, a record-high photovoltage of 1.013 V was attained, corresponding to the lowest voltage deficit of 0.38 eV reported to date, and narrowing the gap with Pb-based analogues (∼0.30 V).
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Affiliation(s)
- Gengling Liu
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, 510006, Guangzhou, China
| | - Xianyuan Jiang
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China
| | - Wenhuai Feng
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, 510006, Guangzhou, China
| | - Guo Yang
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, 510006, Guangzhou, China
| | - Xi Chen
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, 510006, Guangzhou, China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, 201210, Shanghai, China
| | - Wu-Qiang Wu
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, 510006, Guangzhou, China
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10
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Li P, Cao X, Li J, Jiao B, Hou X, Hao F, Ning Z, Bian Z, Xi J, Ding L, Wu Z, Dong H. Ligand Engineering in Tin-Based Perovskite Solar Cells. NANO-MICRO LETTERS 2023; 15:167. [PMID: 37395847 PMCID: PMC10317948 DOI: 10.1007/s40820-023-01143-0] [Citation(s) in RCA: 3] [Impact Index Per Article: 3.0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/05/2023] [Accepted: 06/11/2023] [Indexed: 07/04/2023]
Abstract
Perovskite solar cells (PSCs) have attracted aggressive attention in the photovoltaic field in light of the rapid increasing power conversion efficiency. However, their large-scale application and commercialization are limited by the toxicity issue of lead (Pb). Among all the lead-free perovskites, tin (Sn)-based perovskites have shown potential due to their low toxicity, ideal bandgap structure, high carrier mobility, and long hot carrier lifetime. Great progress of Sn-based PSCs has been realized in recent years, and the certified efficiency has now reached over 14%. Nevertheless, this record still falls far behind the theoretical calculations. This is likely due to the uncontrolled nucleation states and pronounced Sn (IV) vacancies. With insights into the methodologies resolving both issues, ligand engineering-assisted perovskite film fabrication dictates the state-of-the-art Sn-based PSCs. Herein, we summarize the role of ligand engineering during each state of film fabrication, ranging from the starting precursors to the ending fabricated bulks. The incorporation of ligands to suppress Sn2+ oxidation, passivate bulk defects, optimize crystal orientation, and improve stability is discussed, respectively. Finally, the remained challenges and perspectives toward advancing the performance of Sn-based PSCs are presented. We expect this review can draw a clear roadmap to facilitate Sn-based PSCs via ligand engineering.
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Affiliation(s)
- Peizhou Li
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xiangrong Cao
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Jingrui Li
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Bo Jiao
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Xun Hou
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China
| | - Feng Hao
- School of Materials and Energy, University of Electronic Science and Technology of China, Chengdu, 611731, People's Republic of China
| | - Zhijun Ning
- School of Physical Science and Technology, ShanghaiTech University, Shanghai, 201210, People's Republic of China
| | - Zuqiang Bian
- Beijing National Laboratory for Molecular Sciences, State Key Laboratory of Rare Earth Materials Chemistry and Applications, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, People's Republic of China
| | - Jun Xi
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
| | - Liming Ding
- Center for Excellence in Nanoscience (CAS), Key Laboratory of Nanosystem and Hierarchical Fabrication (CAS), National Center for Nanoscience and Technology, Beijing, 100190, People's Republic of China.
| | - Zhaoxin Wu
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, People's Republic of China.
| | - Hua Dong
- Key Laboratory for Physical Electronics and Devices (MoE), Shaanxi Key Lab of Information Photonic Technique, School of Electronic and Information Engineering, Xi'an Jiaotong University, Xi'an, 710049, People's Republic of China.
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, 030006, People's Republic of China.
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11
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Liu W, Hu S, Pascual J, Nakano K, Murdey R, Tajima K, Wakamiya A. Tin Halide Perovskite Solar Cells with Open-Circuit Voltages Approaching the Shockley-Queisser Limit. ACS APPLIED MATERIALS & INTERFACES 2023. [PMID: 37379236 DOI: 10.1021/acsami.3c06538] [Citation(s) in RCA: 2] [Impact Index Per Article: 2.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/30/2023]
Abstract
The power conversion efficiency of tin-based halide perovskite solar cells is limited by large photovoltage losses arising from the significant energy-level offset between the perovskite and the conventional electron transport material, fullerene C60. The fullerene derivative indene-C60 bisadduct (ICBA) is a promising alternative to mitigate this drawback, owing to its superior energy level matching with most tin-based perovskites. However, the less finely controlled energy disorder of the ICBA films leads to the extension of its band tails that limits the photovoltage of the resultant devices and reduces the power conversion efficiency. Herein, we fabricate ICBA films with improved morphology and electrical properties by optimizing the choice of solvent and the annealing temperature. Energy disorder in the ICBA films is substantially reduced, as evidenced by the 22 meV smaller width of the electronic density of states. The resulting solar cells show open-circuit voltages of up to 1.01 V, one of the highest values reported so far for tin-based devices. Combined with surface passivation, this strategy enabled solar cells with efficiencies of up to 11.57%. Our work highlights the importance of controlling the properties of the electron transport material toward the development of efficient lead-free perovskite solar cells and demonstrates the potential of solvent engineering for efficient device processing.
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Affiliation(s)
- Wentao Liu
- Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Shuaifeng Hu
- Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Jorge Pascual
- Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Kyohei Nakano
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Richard Murdey
- Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
| | - Keisuke Tajima
- RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan
| | - Atsushi Wakamiya
- Institute for Chemical Research, Kyoto University, Gokasho, Uji, Kyoto 611-0011, Japan
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12
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Sun C, Yang P, Nan Z, Tian C, Cai Y, Chen J, Qi F, Tian H, Xie L, Meng L, Wei Z. Well-Defined Fullerene Bisadducts Enable High-Performance Tin-Based Perovskite Solar Cells. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2205603. [PMID: 36562082 DOI: 10.1002/adma.202205603] [Citation(s) in RCA: 8] [Impact Index Per Article: 8.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 06/20/2022] [Revised: 12/11/2022] [Indexed: 06/17/2023]
Abstract
Tin-based perovskite solar cells (TPSCs) are attracting intense research interest due to their excellent optoelectric properties and eco-friendly features. To further improve the device performance, developing new fullerene derivatives as electron transporter layers (ETLs) is highly demanded. Four well-defined regioisomers (trans-2, trans-3, trans-4, and e) of diethylmalonate-C60 bisadduct (DCBA) are isolated and well characterized. The well-defined molecular structure enables us to investigate the real structure-dependent effects on photovoltaic performance. It is found that the chemical structures of the regioisomers not only affect their energy levels, but also lead to significant differences in their molecular packings and interfacial contacts. As a result, the devices with trans-2, trans-3, trans-4, and e as ETLs yield efficiencies of 11.69%, 14.58%, 12.59%, and 10.55%, respectively, which are higher than that of the as-prepared DCBA-based (10.28%) device. Notably, the trans-3-based device also demonstrates a certified efficiency of 14.30%, representing one of the best-performing TPSCs.
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Affiliation(s)
- Chao Sun
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Panpan Yang
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Ziang Nan
- State Key Lab for Physical Chemistry of Solid Surfaces, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Chengbo Tian
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Yuanting Cai
- State Key Lab for Physical Chemistry of Solid Surfaces, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Jingfu Chen
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Fangfang Qi
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Hanrui Tian
- State Key Lab for Physical Chemistry of Solid Surfaces, Department of Chemistry, College of Chemistry and Chemical Engineering, Xiamen University, Xiamen, 361005, China
| | - Liqiang Xie
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
| | - Lingyi Meng
- CAS Key Laboratory of Design and Assembly of Functional Nanostructures, and Fujian Provincial Key Laboratory of Nanomaterials, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou, Fujian, 350002, China
| | - Zhanhua Wei
- Xiamen Key Laboratory of Optoelectronic Materials and Advanced Manufacturing, Institute of Luminescent Materials and Information Displays, College of Materials Science and Engineering, Huaqiao University, Xiamen, 361021, China
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13
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Chen P, Xiao Y, Li L, Zhao L, Yu M, Li S, Hu J, Liu B, Yang Y, Luo D, Hou CH, Guo X, Shyue JJ, Lu ZH, Gong Q, Snaith HJ, Zhu R. Efficient Inverted Perovskite Solar Cells via Improved Sequential Deposition. ADVANCED MATERIALS (DEERFIELD BEACH, FLA.) 2023; 35:e2206345. [PMID: 36443913 DOI: 10.1002/adma.202206345] [Citation(s) in RCA: 15] [Impact Index Per Article: 15.0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Received: 07/13/2022] [Revised: 11/21/2022] [Indexed: 06/16/2023]
Abstract
Inverted-structure metal halide perovskite solar cells (PSCs) have attractive advantages like low-temperature processability and outstanding device stability. The two-step sequential deposition method shows the benefits of easy fabrication and decent performance repeatability. Nevertheless, it is still challenging to achieve high-performance inverted PSCs with similar or equal power conversion efficiencies (PCEs) compared to the regular-structure counterparts via this deposition method. Here, an improved two-step sequential deposition technique is demonstrated via treating the bottom organic hole-selective layer with the binary modulation system composed of a polyelectrolyte and an ammonium salt. Such improved sequential deposition method leads to the spontaneous refinement of up and buried interfaces for the perovskite films, contributing to high film quality with significantly reduced defect density and better charge transportation. As a result, the optimized PSCs show a large enhancement in the open-circuit voltage by 100 mV and a dramatic lift in the PCE from 18.1% to 23.4%, delivering the current state-of-the-art performances for inverted PSCs. Moreover, good operational and thermal stability is achieved upon the improved inverted PSCs. This innovative strategy helps gain a deeper insight into the perovskite crystal growth and defect modulation in the inverted PSCs based on the two-step sequential deposition method.
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Affiliation(s)
- Peng Chen
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Yun Xiao
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Lei Li
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Lichen Zhao
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Maotao Yu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Shunde Li
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
| | - Juntao Hu
- Department of Physics, Center for Optoelectronics Engineering Research, Yunnan University, Kunming, Yunnan, 650091, China
- Center of Development and Research, Yunnan Tin Group (Holding) Co. Ltd, Kunming, Yunnan, 650106, China
| | - Bin Liu
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Yingguo Yang
- Shanghai Synchrotron Radiation Facility (SSRF), Zhangjiang Lab, Shanghai Advanced Research Institute, Chinese Academy of Sciences, Shanghai, 201204, China
| | - Deying Luo
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario, M5G 3E4, Canada
| | - Cheng-Hung Hou
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Xugang Guo
- Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), Shenzhen, Guangdong, 518055, China
| | - Jing-Jong Shyue
- Research Center for Applied Sciences, Academia Sinica, Taipei, 11529, Taiwan
| | - Zheng-Hong Lu
- Department of Physics, Center for Optoelectronics Engineering Research, Yunnan University, Kunming, Yunnan, 650091, China
- Department of Materials Science and Engineering, University of Toronto, Toronto, Ontario, M5G 3E4, Canada
| | - Qihuang Gong
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
| | - Henry J Snaith
- Clarendon Laboratory, Department of Physics, University of Oxford, Oxford, OX1 3PU, UK
| | - Rui Zhu
- State Key Laboratory for Artificial Microstructure and Mesoscopic Physics, School of Physics, Frontiers Science Center for Nano-optoelectronics & Collaborative Innovation Center of Quantum Matter, Peking University, Beijing, 100871, China
- Peking University Yangtze Delta Institute of Optoelectronics, Nantong, Jiangsu, 226010, China
- Collaborative Innovation Center of Extreme Optics, Shanxi University, Taiyuan, Shanxi, 030006, China
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14
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Li H, Zang Z, Wei Q, Jiang X, Ma M, Xing Z, Wang J, Yu D, Wang F, Zhou W, Wong KS, Chow PCY, Zhou Y, Ning Z. High-member low-dimensional Sn-based perovskite solar cells. Sci China Chem 2023. [DOI: 10.1007/s11426-022-1489-8] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 01/13/2023]
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15
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Baranwal AK, Hayase S. Recent Advancements in Tin Halide Perovskite-Based Solar Cells and Thermoelectric Devices. NANOMATERIALS (BASEL, SWITZERLAND) 2022; 12:4055. [PMID: 36432341 PMCID: PMC9694716 DOI: 10.3390/nano12224055] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 10/20/2022] [Revised: 11/10/2022] [Accepted: 11/14/2022] [Indexed: 06/16/2023]
Abstract
The excellent optoelectronic properties of tin halide perovskites (Sn-PVKs) have made them a promising candidate for replacing toxic Pb counterparts. Concurrently, their enormous potential in photon harvesting and thermoelectricity applications has attracted increasing attention. The optoelectronic properties of Sn-PVKs are governed by the flexible nature of SnI6 octahedra, and they exhibit extremely low thermal conductivity. Due to these diverse applications, this review first analyzes the structural properties, optoelectronic properties, defect physics, and thermoelectric properties of Sn-PVKs. Then, recent techniques developed to solve limitations with Sn-PVK-based devices to improve their photoelectric and thermoelectric performance are discussed in detail. Finally, the challenges and prospects for further development of Sn-PVK-based devices are discussed.
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16
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Zhang D, Wang X, Fan Z, Xia X, Li F. Nondestructive Post-Treatment Enabled by In Situ Generated 2D Perovskites Derived from Multi-ammonium Molecule Vapor for High-Performance 2D/3D Bilayer Perovskite Solar Cells. ACS APPLIED MATERIALS & INTERFACES 2022; 14:51053-51065. [PMID: 36322008 DOI: 10.1021/acsami.2c17151] [Citation(s) in RCA: 1] [Impact Index Per Article: 0.5] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/16/2023]
Abstract
Recently, two-dimensional (2D)/three-dimensional (3D) bilayer perovskite solar cells (PSCs) show a great potential for commercialization due to the combination of the fascinating photovoltaic performance of 3D perovskites and superior stability of 2D perovskites. However, it is a challenge to nondestructively construct 2D/3D bilayer perovskites, and the impact of the number of amine groups in ammonium spacer cations on the properties of 2D/3D bilayer perovskites has not been investigated. In this work, a novel interfacial post-treatment strategy is proposed to nondestructively fabricate 2D/3D bilayer perovskite films using the multi-ammonium molecule (MAM) vapor. Here, a series of MAMs with three to six amine groups (3 to 6N), including diethylenetriamine (DETA, 3N), triethylenetetramine (TETA, 4N), tetraethylenepentamine (TEPA, 5N), and pentaethylenehexamine (PEHA, 6N), are applied and compared. Benefiting from the strong interaction between MAMs and perovskites, the MAM vapor post-treatment can in situ generate Dion-Jacobson (DJ) 2D capping layers on the surface of 3D perovskite films. In comparison with the 3D perovskite film, such DJ 2D/3D perovskite films exhibit improved film quality, effectively passivated defects/traps, optimized interfacial band energy alignment, and mitigatory tensile strain. In particular, the number of amine groups in MAMs can dramatically influence the quality of DJ 2D/3D bilayer perovskite films and their corresponding photovoltaic performance. As the number of amine groups increases from DETA to PEHA, the efficiency and stability of PSCs are boosted significantly. Consequently, the PEHA-based DJ 2D/3D bilayer PSC delivers a champion power conversion efficiency of 21.79% with a negligible hysteresis effect, elevated reproducibility, and enhanced device stability. This work offers the reference for designing novel and effective MAMs for nondestructively fabricating high-performance 2D/3D bilayer PSCs.
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Affiliation(s)
- Dan Zhang
- School of Physics and Materials Science, Nanchang University, 999 Xuefu Avenue, Nanchang 330031, China
| | - Xiaofeng Wang
- School of Physics and Materials Science, Nanchang University, 999 Xuefu Avenue, Nanchang 330031, China
| | - Zhiping Fan
- School of Physics and Materials Science, Nanchang University, 999 Xuefu Avenue, Nanchang 330031, China
| | - Xuefeng Xia
- School of Physics and Materials Science, Nanchang University, 999 Xuefu Avenue, Nanchang 330031, China
| | - Fan Li
- School of Physics and Materials Science, Nanchang University, 999 Xuefu Avenue, Nanchang 330031, China
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17
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Chowdhury TH, Reo Y, Yusoff ARBM, Noh Y. Sn-Based Perovskite Halides for Electronic Devices. ADVANCED SCIENCE (WEINHEIM, BADEN-WURTTEMBERG, GERMANY) 2022; 9:e2203749. [PMID: 36257820 PMCID: PMC9685468 DOI: 10.1002/advs.202203749] [Citation(s) in RCA: 3] [Impact Index Per Article: 1.5] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Figures] [Subscribe] [Scholar Register] [Received: 07/12/2022] [Indexed: 06/16/2023]
Abstract
Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.
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Affiliation(s)
- Towhid H. Chowdhury
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Youjin Reo
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Abd Rashid Bin Mohd Yusoff
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
| | - Yong‐Young Noh
- Department of Chemical EngineeringPohang University of Science and Technology77 Cheongam‐Ro, Nam‐GuPohang37673Republic of Korea
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18
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Liu G, Zhong Y, Feng W, Yang M, Yang G, Zhong JX, Tian T, Luo JB, Tao J, Yang S, Wang XD, Tan L, Chen Y, Wu WQ. Multidentate Chelation Heals Structural Imperfections for Minimized Recombination Loss in Lead-Free Perovskite Solar Cells. Angew Chem Int Ed Engl 2022; 61:e202209464. [PMID: 35982524 DOI: 10.1002/anie.202209464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [MESH Headings] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Received: 06/28/2022] [Indexed: 11/09/2022]
Abstract
Tin-based perovskite solar cells (Sn-PSCs) have emerged as promising environmentally viable photovoltaic technologies, but still suffer from severe non-radiative recombination loss due to the presence of abundant deep-level defects in the perovskite film and under-optimized carrier dynamics throughout the device. Herein, we healed the structural imperfections of Sn perovskites in an "inside-out" manner by incorporating a new class of biocompatible chelating agent with multidentate claws, namely, 2-Guanidinoacetic acid (GAA), which passivated a variety of deep-level Sn-related and I-related defects, cooperatively reinforced the passivation efficacy, released the lattice strain, improved the structural toughness, and promoted the carrier transport of Sn perovskites. Encouragingly, an efficiency of 13.7 % with a small voltage deficit of ≈0.47 V has been achieved for the GAA-modified Sn-PSCs. GAA modification also extended the lifespan of Sn-PSCs over 1200 hours.
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Affiliation(s)
- Gengling Liu
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Yang Zhong
- Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Wenhuai Feng
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Meifang Yang
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Guo Yang
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Jun-Xing Zhong
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Tian Tian
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Jian-Bin Luo
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Junlei Tao
- Province-Ministry Co-construction Collaborative Innovation Center of Hebei Photovoltaic Technology, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Shaopeng Yang
- Province-Ministry Co-construction Collaborative Innovation Center of Hebei Photovoltaic Technology, College of Physics Science and Technology, Hebei University, Baoding, 071002, China
| | - Xu-Dong Wang
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
| | - Licheng Tan
- Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Yiwang Chen
- Institute of Polymers and Energy Chemistry (IPEC), Nanchang University, 999 Xuefu Avenue, Nanchang, 330031, China
| | - Wu-Qiang Wu
- Key Laboratory of Bioinorganic and Synthetic Chemistry (MoE), Lehn Institute of Functional Materials, School of Chemistry, Sun Yat-sen University, Guangzhou, 510006, China
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19
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Liu G, Zhong Y, Feng W, Yang M, Yang G, Zhong JX, Tian T, Luo JB, Tao J, Yang S, Wang X, Tan L, Chen Y, Wu WQ. Multidentate Chelation Heals Structural Imperfections for Minimized Recombination Loss in Lead‐Free Perovskite Solar Cells. Angew Chem Int Ed Engl 2022. [DOI: 10.1002/ange.202209464] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Track Full Text] [Journal Information] [Subscribe] [Scholar Register] [Indexed: 11/07/2022]
Affiliation(s)
- Genglig Liu
- Sun Yat-Sen University School of Chemistry 510006 Guangzhou CHINA
| | - Yang Zhong
- Nanchang University Institute of Polymers and Energy Chemistry CHINA
| | - Wenhuai Feng
- Sun Yat-Sen University School of Chemistry CHINA
| | - Meifang Yang
- Sun Yat-Sen University School of Chemistry CHINA
| | - Guo Yang
- Sun Yat-Sen University School of Chemistry CHINA
| | | | - Tian Tian
- Sun Yat-Sen University School of Chemistry CHINA
| | - Jian-Bin Luo
- Sun Yat-Sen University School of Chemistry CHINA
| | - Junlei Tao
- Hebei University College of Physics Science and Technology CHINA
| | - Shaopeng Yang
- Hebei University College of Physics Science and Technology CHINA
| | - Xudong Wang
- Sun Yat-Sen University School of Chemistry CHINA
| | - Licheng Tan
- Nanchang University Institute of Polymers and Energy Chemistry CHINA
| | - Yiwang Chen
- Nanchang University Institute of Polymers and Energy Chemistry CHINA
| | - Wu-Qiang Wu
- Sun Yat-Sen University School of Chemistry School of Chemistry 510006 Guangzhou CHINA
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