High Open Circuit Voltage Over 1 V Achieved in Tin-Based Perovskite Solar Cells with a 2D/3D Vertical Heterojunction

Improving Hybrid Tin Halide Films of Lead-Free Perovskite Solar Cells with a Volatile Additive of Dipropyl Sulfide

Lead-free perovskite solar cells with hybrid tin halides (Sn-PVKs) as harvesters have attracted attention with respect to eliminating the contamination of conventional hybrid lead halides. However, Sn-PVK films usually have inferior performance due to rapid crystallization and uncontrollable morphology. Moreover, Sn2+ ions suffer from irreversible oxidation that results in self-doping and device instability. Additive engineering is a key strategy for improving the quality of Sn-PVK films, but solid residues of additives could degrade the transport-recombination process. In this work, dipropyl sulfide (DPS) was introduced as a volatile additive into the precursor solution, and no residue exists in the Sn-PVK films after thermal annealing. The coordinating ability of DPS molecules stabilized Sn2+ ions to form the intermediate complex, which retards the crystallization and oxidation of Sn-PVK films. Consequently, the power conversion efficiencies of devices increase from 11.0% to 12.9% with less recombination and a lower leakage current, and the stability of the devices is improved simultaneously.

Ternary Passivation for Enhanced Carrier Transport and Recombination Suppression in Highly Efficient Sn-Based Perovskite Solar Cells

The exploration of nontoxic Sn-based perovskites as a viable alternative to their toxic Pb-based counterparts has garnered increased attention. However, the power conversion efficiency of Sn-based perovskite solar cells lags significantly behind their Pb-based counterparts. This study presents a ternary passivation strategy aimed at enhancing device performance, employing [6,6]-phenyl-C61-butyric-acid-methyl-ester (PCBM), poly(3-hexylthiophene) (P3HT), and indene C60 bisadduct (ICBA). These components play crucial roles in managing energy levels and enhancing carrier transportation, respectively. The results reveal that the introduction of the ternary system leads to improvements in carrier collection and transportation, accompanied by a suppression of the recombination process. Ultimately, the champion device achieves a remarkable performance with an efficiency of 14.64%. Notably, the device also exhibits robust operational and long-term stored stability.

In Situ Polymerization Strategy for Improving the Stability of Sn-Based Perovskite Solar Cells

Sn-based perovskite solar cells (Sn-PSCs) have received increasing attention due to their nontoxicity and potentially high efficiency. However, the poor stability of Sn2+ ions remains a major problem in achieving stable and efficient Sn-PSCs. Herein, an in situ polymerization strategy using allyl thiourea and ethylene glycol dimethacrylate as cross-linking agents in the Sn-based perovskite precursor is proposed to improve the device performance of Sn-PSCs. The C═S and N-H bonds of the cross-linkers are able to coordinate with SnI2 and inhibit the oxidation of Sn2+, thereby reducing defect density and improving the stability of Sn-based perovskite films. The high quality of the perovskite film induced by the in situ polymerization strategy delivers an improved power conversion efficiency (PCE) from 7.50 to 9.22%. More importantly, the unpackaged device with cross-linkers maintained more than 70% of the initial PCE after 150 h of AM 1.5G light soaking in a nitrogen atmosphere and 80% of the initial PCE after 1800 h in dark conditions. This work demonstrates that the in situ polymerization strategy is an effective method to enhance the stability of Sn-based perovskite films and devices.

Mitigating Surface Defects in Tin-Based Perovskite Films with α-Tocopherol for Enhanced Photovoltaic Performance

Surface defects in tin-based perovskite films disrupt the periodic arrangement of atoms in crystals, making surface atoms more susceptible to interactions with water and oxygen molecules in the surrounding environment. The diffusion of oxygen ions into the perovskite interior leads to the formation of severe bulk defects, which compromises the performance of tin-based perovskite solar cells (PSCs). As a result, surface defects are recognized as the primary source of degradation and require special attention. In this study, α-Tocopherol (also known as vitamin E) into tin-based perovskite films is introduced. Experimental results show that because of its larger volume, α-Tocopherol does not enter the perovskite lattice. Instead, it forms van der Waals and hydrogen bond interactions with the formamidine ion (FA+) and the [SnI6]4- octahedron at the perovskite terminals. Through α-Tocopherol passivation, both surface and interior oxidation of the perovskite are significantly suppressed as α-Tocopherol firmly embeds itself on the perovskite surface. Density functional theory analysis confirms the inhibition of I─Sn antisite defects (ISn) and Sn interstitial defects (Sni), which possess deep trap states within the bandgap. Ultimately, it is demonstrated that α-Tocopherol enhances the power conversion efficiency (PCE) from 9.19% to 13.14% and prolongs the lifetime of tin-based PSCs to over 50 days.

Synergetic Regulation of Interface Defects and Carriers Dynamics for High-Performance Lead-Free Perovskite Solar Cells

Severe nonradiative recombination and open-circuit voltage loss triggered by high-density interface defects greatly restrict the continuous improvement of Sn-based perovskite solar cells (Sn-PVSCs). Herein, a novel amphoteric semiconductor, O-pivaloylhydroxylammonium trifluoromethanesulfonate (PHAAT), is developed to manage interface defects and carrier dynamics of Sn-PVSCs. The amphiphilic ionic modulators containing multiple Lewis-base functional groups can synergistically passivate anionic and cationic defects while coordinating with uncoordinated Sn2+ to compensate for surface charge and alleviate the Sn2+ oxidation. Especially, the sulfonate anions raise the energy barrier of surface oxidation, relieve lattice distortion, and inhibit nonradiative recombination by passivating Sn-related and I-related deep-level defects. Furthermore, the strong coupling between PHAAT and Sn perovskite induces the transition of the surface electronic state from p-type to n-type, thus creating an extra back-surface field to accelerate electron extraction. Consequently, the PHAAT-treated device exhibits a champion efficiency of 13.94% with negligible hysteresis. The device without any encapsulation maintains 94.7% of its initial PCE after 2000 h of storage and 91.6% of its initial PCE after 1000 h of continuous illumination. This work provides a reliable strategy to passivate interface defects and construct p-n homojunction to realize efficient and stable Sn-based perovskite photovoltaic devices.

Unlocking the Potential of Tin-Based Perovskites: Properties, Progress, and Applications in New-Era Electronics

Electronics have greatly promoted the development of modern society and the exploration of new semiconducting materials with low cost and high mobility continues to attract interest in the advance of next-generation electronic devices. Among emerging semiconductors, the metal-halide perovskite, especially the nontoxic tin (Sn)-based candidates, has recently made breakthroughs in the field of diverse electronic devices due to its excellent charge transport properties and cost-effective large-area deposition capability at low temperatures. To enable a more comprehensive understanding of this emerging research field and promote the development of new-generation perovskite electronics, this review aims to provide an in-depth understanding with the discussion of unique physical properties of Sn-based perovskites and the summarization of recent research progress of Sn-based perovskite field-effect transistors (FETs) and diverse electronic devices. The unique character of negligible ion migration is also discussed, which is fundamentally different from the lead-based counterparts and provides a great prerequisite for device application. The following section highlights the potential broad applications of Sn-perovskite FETs as a competitive and feasible technology. Finally, an outlook and remaining challenges are given to advance the progression of Sn-based perovskite FETs, especially on the origin and solution of stability problems toward high-performance Sn-based perovskite electronics.

Carrier multiplication in perovskite solar cells with internal quantum efficiency exceeding 100

Carrier multiplication (CM) holds great promise to break the Shockley-Queisser limit of single junction photovoltaic cells. Despite compelling spectroscopic evidence of strong CM effects in halide perovskites, studies in actual perovskite solar cells (PSCs) are lacking. Herein, we reconcile this knowledge gap using the testbed Cs0.05FA0.5MA0.45Pb0.5Sn0.5I3 system exhibiting efficient CM with a low threshold of 2Eg (~500 nm) and high efficiency of 99.4 ± 0.4%. Robust CM enables an unbiased internal quantum efficiency exceeding 110% and reaching as high as 160% in the best devices. Importantly, our findings inject fresh insights into the complex interplay of various factors (optical and parasitic absorption losses, charge recombination and extraction losses, etc.) undermining CM contributions to the overall performance. Surprisingly, CM effects may already exist in mixed Pb-Sn PSCs but are repressed by its present architecture. A comprehensive redesign of the existing device configuration is needed to leverage CM effects for next-generation PSCs.

Mutually Tuned Dual Additive Engineering Synergistically Enhances the Photovoltaic Performance of Tin-Based Perovskite Solar Cells

Tin-based perovskite solar cells (T-PSCs) have become the star photovoltaic products in recent years due to their low environmental toxicity and superior photovoltaic performance. However, the easy oxidation of Sn2+ and the energy level mismatch between the perovskite film and charge transport layer limit its efficiency. In order to regulate the microstructure and photoelectric properties of tin-based perovskite films to enhance the efficiency and stability of T-PSCs, guanidinium bromide (GABr) and organic Lewis-based additive methylamine cyanate (MAOCN) are introduced into the FA0.9PEA0.1SnI3-based perovskite precursor. A series of characterizations show that the interactions between additive molecules and perovskite mutually reconcile to improve the photovoltaic performance of T-PSCs. The introduction of GABr can adjust the band gap of the perovskite film and energy level alignment of T-PSCs. They significantly increase the open-circuit voltage (Voc). The MAOCN material can form hydrogen bonds with SnI2 in the precursor, which can inhibit the oxidation of Sn2+ and significantly improve the short-circuit current density (Jsc). The synergistic modulation of the dual additives reduces the trap-state density and improves photovoltaic performance, resulting in an increased champion efficiency of 9.34 for 5.22% of the control PSCs. The unencapsulated T-PSCs with GABr and MAOCN dual additives prepared in the optimized process can retain more than 110% of their initial efficiency after aging for 1750 h in a nitrogen glovebox, but the control PSCs maintain only 50% of their initial efficiency kept in the same conditions. This work provides a new perspective to further improve the efficiency and stability of T-PSCs.

Synergic Electron and Defect Compensation Minimizes Voltage Loss in Lead-Free Perovskite Solar Cells

Sn perovskite solar cells have been regarded as one of the most promising alternatives to the Pb-based counterparts due to their low toxicity and excellent optoelectronic properties. However, the Sn perovskites are notorious to feature heavy p-doping characteristics and possess abundant vacancy defects, which result in under-optimized interfacial energy level alignment and severe nonradiative recombination. Here, we reported a synergic "electron and defect compensation" strategy to simultaneously modulate the electronic structures and defect profiles of Sn perovskites via incorporating a traced amount (0.1 mol %) of heterovalent metal halide salts. Consequently, the doping level of modified Sn perovskites was altered from heavy p-type to weak p-type (i.e. up-shifting the Fermi level by ∼0.12 eV) that determinately reducing the barrier of interfacial charge extraction and effectively suppressing the charge recombination loss throughout the bulk perovskite film and at relevant interfaces. Pioneeringly, the resultant device modified with electron and defect compensation realized a champion efficiency of 14.02 %, which is ∼46 % higher than that of control device (9.56 %). Notably, a record-high photovoltage of 1.013 V was attained, corresponding to the lowest voltage deficit of 0.38 eV reported to date, and narrowing the gap with Pb-based analogues (∼0.30 V).

Ligand Engineering in Tin-Based Perovskite Solar Cells

Perovskite solar cells (PSCs) have attracted aggressive attention in the photovoltaic field in light of the rapid increasing power conversion efficiency. However, their large-scale application and commercialization are limited by the toxicity issue of lead (Pb). Among all the lead-free perovskites, tin (Sn)-based perovskites have shown potential due to their low toxicity, ideal bandgap structure, high carrier mobility, and long hot carrier lifetime. Great progress of Sn-based PSCs has been realized in recent years, and the certified efficiency has now reached over 14%. Nevertheless, this record still falls far behind the theoretical calculations. This is likely due to the uncontrolled nucleation states and pronounced Sn (IV) vacancies. With insights into the methodologies resolving both issues, ligand engineering-assisted perovskite film fabrication dictates the state-of-the-art Sn-based PSCs. Herein, we summarize the role of ligand engineering during each state of film fabrication, ranging from the starting precursors to the ending fabricated bulks. The incorporation of ligands to suppress Sn2+ oxidation, passivate bulk defects, optimize crystal orientation, and improve stability is discussed, respectively. Finally, the remained challenges and perspectives toward advancing the performance of Sn-based PSCs are presented. We expect this review can draw a clear roadmap to facilitate Sn-based PSCs via ligand engineering.

Tin Halide Perovskite Solar Cells with Open-Circuit Voltages Approaching the Shockley-Queisser Limit

The power conversion efficiency of tin-based halide perovskite solar cells is limited by large photovoltage losses arising from the significant energy-level offset between the perovskite and the conventional electron transport material, fullerene C₆₀. The fullerene derivative indene-C₆₀ bisadduct (ICBA) is a promising alternative to mitigate this drawback, owing to its superior energy level matching with most tin-based perovskites. However, the less finely controlled energy disorder of the ICBA films leads to the extension of its band tails that limits the photovoltage of the resultant devices and reduces the power conversion efficiency. Herein, we fabricate ICBA films with improved morphology and electrical properties by optimizing the choice of solvent and the annealing temperature. Energy disorder in the ICBA films is substantially reduced, as evidenced by the 22 meV smaller width of the electronic density of states. The resulting solar cells show open-circuit voltages of up to 1.01 V, one of the highest values reported so far for tin-based devices. Combined with surface passivation, this strategy enabled solar cells with efficiencies of up to 11.57%. Our work highlights the importance of controlling the properties of the electron transport material toward the development of efficient lead-free perovskite solar cells and demonstrates the potential of solvent engineering for efficient device processing.

Well-Defined Fullerene Bisadducts Enable High-Performance Tin-Based Perovskite Solar Cells

Tin-based perovskite solar cells (TPSCs) are attracting intense research interest due to their excellent optoelectric properties and eco-friendly features. To further improve the device performance, developing new fullerene derivatives as electron transporter layers (ETLs) is highly demanded. Four well-defined regioisomers (trans-2, trans-3, trans-4, and e) of diethylmalonate-C₆₀ bisadduct (DCBA) are isolated and well characterized. The well-defined molecular structure enables us to investigate the real structure-dependent effects on photovoltaic performance. It is found that the chemical structures of the regioisomers not only affect their energy levels, but also lead to significant differences in their molecular packings and interfacial contacts. As a result, the devices with trans-2, trans-3, trans-4, and e as ETLs yield efficiencies of 11.69%, 14.58%, 12.59%, and 10.55%, respectively, which are higher than that of the as-prepared DCBA-based (10.28%) device. Notably, the trans-3-based device also demonstrates a certified efficiency of 14.30%, representing one of the best-performing TPSCs.

Efficient Inverted Perovskite Solar Cells via Improved Sequential Deposition

Inverted-structure metal halide perovskite solar cells (PSCs) have attractive advantages like low-temperature processability and outstanding device stability. The two-step sequential deposition method shows the benefits of easy fabrication and decent performance repeatability. Nevertheless, it is still challenging to achieve high-performance inverted PSCs with similar or equal power conversion efficiencies (PCEs) compared to the regular-structure counterparts via this deposition method. Here, an improved two-step sequential deposition technique is demonstrated via treating the bottom organic hole-selective layer with the binary modulation system composed of a polyelectrolyte and an ammonium salt. Such improved sequential deposition method leads to the spontaneous refinement of up and buried interfaces for the perovskite films, contributing to high film quality with significantly reduced defect density and better charge transportation. As a result, the optimized PSCs show a large enhancement in the open-circuit voltage by 100 mV and a dramatic lift in the PCE from 18.1% to 23.4%, delivering the current state-of-the-art performances for inverted PSCs. Moreover, good operational and thermal stability is achieved upon the improved inverted PSCs. This innovative strategy helps gain a deeper insight into the perovskite crystal growth and defect modulation in the inverted PSCs based on the two-step sequential deposition method.

Recent Advancements in Tin Halide Perovskite-Based Solar Cells and Thermoelectric Devices

The excellent optoelectronic properties of tin halide perovskites (Sn-PVKs) have made them a promising candidate for replacing toxic Pb counterparts. Concurrently, their enormous potential in photon harvesting and thermoelectricity applications has attracted increasing attention. The optoelectronic properties of Sn-PVKs are governed by the flexible nature of SnI₆ octahedra, and they exhibit extremely low thermal conductivity. Due to these diverse applications, this review first analyzes the structural properties, optoelectronic properties, defect physics, and thermoelectric properties of Sn-PVKs. Then, recent techniques developed to solve limitations with Sn-PVK-based devices to improve their photoelectric and thermoelectric performance are discussed in detail. Finally, the challenges and prospects for further development of Sn-PVK-based devices are discussed.

Nondestructive Post-Treatment Enabled by In Situ Generated 2D Perovskites Derived from Multi-ammonium Molecule Vapor for High-Performance 2D/3D Bilayer Perovskite Solar Cells

Recently, two-dimensional (2D)/three-dimensional (3D) bilayer perovskite solar cells (PSCs) show a great potential for commercialization due to the combination of the fascinating photovoltaic performance of 3D perovskites and superior stability of 2D perovskites. However, it is a challenge to nondestructively construct 2D/3D bilayer perovskites, and the impact of the number of amine groups in ammonium spacer cations on the properties of 2D/3D bilayer perovskites has not been investigated. In this work, a novel interfacial post-treatment strategy is proposed to nondestructively fabricate 2D/3D bilayer perovskite films using the multi-ammonium molecule (MAM) vapor. Here, a series of MAMs with three to six amine groups (3 to 6N), including diethylenetriamine (DETA, 3N), triethylenetetramine (TETA, 4N), tetraethylenepentamine (TEPA, 5N), and pentaethylenehexamine (PEHA, 6N), are applied and compared. Benefiting from the strong interaction between MAMs and perovskites, the MAM vapor post-treatment can in situ generate Dion-Jacobson (DJ) 2D capping layers on the surface of 3D perovskite films. In comparison with the 3D perovskite film, such DJ 2D/3D perovskite films exhibit improved film quality, effectively passivated defects/traps, optimized interfacial band energy alignment, and mitigatory tensile strain. In particular, the number of amine groups in MAMs can dramatically influence the quality of DJ 2D/3D bilayer perovskite films and their corresponding photovoltaic performance. As the number of amine groups increases from DETA to PEHA, the efficiency and stability of PSCs are boosted significantly. Consequently, the PEHA-based DJ 2D/3D bilayer PSC delivers a champion power conversion efficiency of 21.79% with a negligible hysteresis effect, elevated reproducibility, and enhanced device stability. This work offers the reference for designing novel and effective MAMs for nondestructively fabricating high-performance 2D/3D bilayer PSCs.

Sn-Based Perovskite Halides for Electronic Devices

Because of its less toxicity and electronic structure analogous to that of lead, tin halide perovskite (THP) is currently one of the most favorable candidates as an active layer for optoelectronic and electric devices such as solar cells, photodiodes, and field-effect transistors (FETs). Promising photovoltaics and FETs performances have been recently demonstrated because of their desirable electrical and optical properties. Nevertheless, THP's easy oxidation from Sn2+ to Sn4+ , easy formation of tin vacancy, uncontrollable film morphology and crystallinity, and interface instability severely impede its widespread application. This review paper aims to provide a basic understanding of THP as a semiconductor by highlighting the physical structure, energy band structure, electrical properties, and doping mechanisms. Additionally, the key chemical instability issues of THPs are discussed, which are identified as the potential bottleneck for further device development. Based on the understanding of the THPs properties, the key recent progress of THP-based solar cells and FETs is briefly discussed. To conclude, current challenges and perspective opportunities are highlighted.

Multidentate Chelation Heals Structural Imperfections for Minimized Recombination Loss in Lead-Free Perovskite Solar Cells

Tin-based perovskite solar cells (Sn-PSCs) have emerged as promising environmentally viable photovoltaic technologies, but still suffer from severe non-radiative recombination loss due to the presence of abundant deep-level defects in the perovskite film and under-optimized carrier dynamics throughout the device. Herein, we healed the structural imperfections of Sn perovskites in an "inside-out" manner by incorporating a new class of biocompatible chelating agent with multidentate claws, namely, 2-Guanidinoacetic acid (GAA), which passivated a variety of deep-level Sn-related and I-related defects, cooperatively reinforced the passivation efficacy, released the lattice strain, improved the structural toughness, and promoted the carrier transport of Sn perovskites. Encouragingly, an efficiency of 13.7 % with a small voltage deficit of ≈0.47 V has been achieved for the GAA-modified Sn-PSCs. GAA modification also extended the lifespan of Sn-PSCs over 1200 hours.