Simultaneous Lattice Engineering and Defect Control via Cadmium Incorporation for High-Performance Inorganic Perovskite Solar Cells

Nanoscale Local Contacts Enable Inverted Inorganic Perovskite Solar Cells with 20.8 % Efficiency

Inorganic perovskite solar cells (IPSCs) have gained significant attention due to their excellent thermal stability and suitable band gap (~1.7 eV) for tandem solar cell applications. However, the defect-induced non-radiative recombination losses, low charge extraction efficiency, energy level mismatches, and so on render the fabrication of high-efficiency inverted IPSCs remains challenging. Here, the use of 3-amino-5-bromopyridine-2-formamide (ABF) in methanol was dynamically spin-coated on the surface of CsPbI2.85Br0.15 film, which facilitates the limited etching of defect-rich subsurface layer, resulting in the formation of vertical PbI2 nanosheet structures. This enabled localized contacts between the perovskite film and the electron transport layer, suppress the recombination of electron-hole and beneficial to electron extraction. Additionally, the C=O and C=N groups in ABF effectively passivated the undercoordinated Pb2+ at grain boundaries and on the surface of CsPbI2.85Br0.15 film. Eventually, we achieved a champion efficiency of 20.80 % (certified efficiency of 20.02 %) for inverted IPSCs with enhanced stability, which is the highest value ever reported to date. Furthermore, we successfully prepared p-i-n type monolithic inorganic perovskite/silicon tandem solar cells (IPSTSCs) with an efficiency of 26.26 %. This strategy provided both fast extraction and efficient passivation at the electron-selective interface.

Defect Passivation and Lithium Ion Coordination Via Hole Transporting Layer Modification for High Performance Inorganic Perovskite Solar Cells

Metal halide inorganic perovskite solar cells (PSCs) have great potential to achieve high efficiency with excellent thermal stability. However, the surface defect traps restrain the achievement of high open circuit voltage (VOC ) and power conversion efficiency (PCE) of the devices due to the severe nonradiative charge recombination. Moreover, the state-of-the-art hole transporting layer (HTL) significantly hampers device moisture stability, even though it renders the highest solar cell efficiency. Herein, a one-stone-two-birds strategy is proposed using a biocompatible material tryptamine (TA) as an additive in HTL. First, TA bearing electron rich moieties can favorably passivate the surface defects of inorganic perovskite films, significantly reducing trap density and prolonging charge lifetime. It results in a drastic improvement of VOC from 1.192 to 1.251 V, with a VOC loss of 0.48 V. The corresponding PSCs achieve a 21.8% PCE under 100 mW cm-2 illumination. Second, TA in HTL can coordinate with lithium cations, retarding their reaction with moisture and increasing the moisture stability of HTL. Consequently, the black phase of inorganic perovskite films is well preserved, and the corresponding PSCs maintain 90% of the initial PCE after 800 h storage at relative humidity of 25-35%, much higher than the control devices.

Characterizing Spatial and Energetic Distributions of Trap States Toward Highly Efficient Perovskite Photovoltaics

Due to their greater opt electric performance, perovskite photovoltaics (PVs) present huge potential to be commercialized. Perovskite PV's high theoretical efficiency expands the available development area. The passivation of defects in perovskite films is crucial for approaching the theoretical limit. In addition to creating efficient passivation techniques, it is essential to direct the passivation approach by getting precise and real-time information on the trap states through measurements. Therefore, it is necessary to establish quantitative characterization methods for the trap states in energy and 3D spaces. The authors cover the characterization of the spatial and energy distributions of trap states in this article with an eye toward high-efficiency perovskite photovoltaics. After going over the strategies that have been created for characterizing and evaluating trap states, the authors will concentrate on how to direct the creative development of characterization techniques for trap states assessment and highlight the opportunities and challenges of future development. The 3D space and energy distribution mappings of trap states are anticipated to be realized. The review will give key guiding importance for further approaching the theoretical efficiency of perovskite photovoltaics, offering some future research direction and technological assistance for the development of appropriate targeted passivation technologies.

3D to 0D cesium lead bromide: A 79/81Br NMR, NQR and theoretical investigation

Inorganic metal halides offer unprecedented tunability through elemental variation of simple three-element compositions, but can exhibit complicated phase behaviour, degradation, and microscopic phenomena (disorder/dynamics) that play an integral role for the bulk-level chemical and physical properties of these materials. Understanding the halogen chemical environment in such materials is crucial to addressing many of the concerns regarding implementing these materials in commercial applications. In this study, a combined solid-state nuclear magnetic resonance, nuclear quadrupole resonance and quantum chemical computation approach is used to interrogate the Br chemical environment in a series of related inorganic lead bromide materials: CsPbBr₃, CsPb₂Br₅, and Cs₄PbBr₆. The quadrupole coupling constants (C_Q) were determined to range from 61 to 114 MHz for ⁸¹Br, with CsPbBr₃ exhibiting the largest measured C_Q and Cs₄PbBr₆ the smallest. GIPAW DFT was shown to be an excellent pre-screening tool for estimating the EFG of Br materials and can increase experimental efficiency by providing good starting estimates for acquisition. Finally, the combination of theory and experiment to inform the best methods for expanding further to the other quadrupolar halogens is discussed.

Effect of aliovalent bismuth substitution on structure and optical properties of CsSnBr3

Aliovalent substitution of the B component in ABX₃ metal halides has often been proposed to modify the band gap and thus the photovoltaic properties, but details about the resulting structure have remained largely unknown. Here, we examine these effects in Bi-substituted CsSnBr₃. Powder X-ray diffraction (XRD) and solid-state ¹¹⁹Sn, ¹³³Cs and ²⁰⁹Bi nuclear magnetic resonance (NMR) spectroscopy were carried out to infer how Bi substitution changes the structure of these compounds. The cubic perovskite structure is preserved upon Bi-substitution, but with disorder in the B site occurring at the atomic level. Bi atoms are randomly distributed as they substitute for Sn atoms with no evidence of Bi segregation. The absorption edge in the optical spectra shifts from 1.8 to 1.2 eV upon Bi-substitution, maintaining a direct band gap according to electronic structure calculations. It is shown that Bi-substitution improves resistance to degradation by inhibiting the oxidation of Sn.

High-Efficiency Carbon-based CsPbI2 Br Perovskite Solar Cells from Dual Direction Thermal Diffusion Treatment with Cadmium Halides

In recent years, carbon-based CsPbI₂ Br perovskite solar cells (PSCs) have attracted more attention due to their low cost and good stability. However, the power conversion efficiency (PCE) of carbon-based CsPbI₂ Br PSCs is still no more than 16%, because of the defects in CsPbI₂ Br or at the interface with the electron transport layer (ETL), as well as the energy level mismatch, which lead to the loss of energy, thus limiting PCE values. Herein, a series of cadmium halides are introduced, including CdCl₂ , CdBr₂ and CdI₂ for dual direction thermal diffusion treatment. Some Cd²⁺ ions thermally diffuse downward to passivate the defects inside or on the surface of SnO₂ ETL. Meanwhile, the energy level structure of SnO₂ ETL is adjusted, which is in favor of the transfer of electron carriers and blocking holes. On the other hand, part of Cd²⁺ and Cl^- ions thermally diffuse upward into the CsPbI₂ Br lattice to passivate crystal defects. Through dual direction thermal diffusion treatment by CdCl₂ , CdI₂ and CdBr₂ , the performance of devices has been significantly improved, and their PCE has been increased from 13.01% of the original device to 14.47%, 14.31%, and 13.46%, respectively. According to existing reports, 14.47% is one of the highest PCE of carbon-based CsPbI₂ Br PSCs with SnO₂ ETLs.