1
|
Yang L, Zheng F, Wu J, Hou Y, Qi X, Miao Y, Wang X, Huang L, Liu X, Zhang J, Zhu Y, Hu Z. Unveiling Local Current Behavior and Manipulating Grain Homogenization of Perovskite Films for Efficient Solar Cells. ACS NANO 2024; 18:17547-17556. [PMID: 38935688 DOI: 10.1021/acsnano.4c00911] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Track Full Text] [Subscribe] [Scholar Register] [Indexed: 06/29/2024]
Abstract
Achieving high power conversion efficiency in perovskite solar cells (PSCs) heavily relies on fabricating homogeneous perovskite films. However, understanding microscopic-scale properties such as current generation and open-circuit voltage within perovskite crystals has been challenging due to difficulties in quantifying intragrain behavior. In this study, the local current intensity within state-of-the-art perovskite films mapped by conductive atomic force microscopy reveals a distinct heterogeneity, which exhibits a strong anticorrelation to the external biases. Particularly under different external bias polarities, specific regions in the current mapping show contrasting conductivity. Moreover, grains oriented differently exhibit varied surface potentials and currents, leading us to associate this local current heterogeneity with the grain orientation. It was found that the films treated with isopropanol exhibit ordered grain orientation, demonstrating minimized lattice heterogeneity, fewer microstructure defects, and reduced electronic disorder. Importantly, devices exhibiting an ordered orientation showcase elevated macroscopic optoelectronic properties and boosted device performance. These observations underscore the critical importance of fine-tuning the grain homogenization of perovskite films, offering a promising avenue for further enhancing the efficiency of PSCs.
Collapse
Affiliation(s)
- Liu Yang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Fei Zheng
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Jun Wu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Yanna Hou
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Xiaorong Qi
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Yuchen Miao
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Xu Wang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Like Huang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Xiaohui Liu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Jing Zhang
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| | - Yuejin Zhu
- School of Science and Engineering, College of Science and Technology, Ningbo University, Ningbo 315300, China
| | - Ziyang Hu
- Department of Microelectronic Science and Engineering, School of Physical Science and Technology, Ningbo Collaborative Innovation Center of Nonlinear Calamity System of Ocean and Atmosphere, Ningbo University, Ningbo 315211, China
| |
Collapse
|
2
|
Yang Y, Zhang T, Zhu H, Geng K, Huang S, Shen B, Dong B, Zhang S, Gu D, Jiang S, Yan Y, Guo H, Qiu J, Li L, Yuan N, Ding J. Optimizing Crystal Orientation and Defect Mitigation in Antimony Selenide Thin-Film Solar Cells through Buffer Layer Energy Band Adjustment. SMALL (WEINHEIM AN DER BERGSTRASSE, GERMANY) 2024:e2403292. [PMID: 38958094 DOI: 10.1002/smll.202403292] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Key Words] [Grants] [Track Full Text] [Subscribe] [Scholar Register] [Received: 04/24/2024] [Revised: 06/16/2024] [Indexed: 07/04/2024]
Abstract
Antimony selenide (Sb2Se3) has sparked significant interest in high-efficiency photovoltaic applications due to its advantageous material and optoelectronic properties. In recent years, there has been considerable development in this area. Nonetheless, defects and suboptimal [hk0] crystal orientation expressively limit further device efficiency enhancement. This study used Zinc (Zn) to adjust the interfacial energy band and strengthen carrier transport. For the first time, it is discovered that the diffusion of Zn in the cadmium sulfide (CdS) buffer layer can affect the crystalline orientation of the Sb2Se3 thin films in the superstrate structure. The effect of Zn diffusion on the morphology of Sb2Se3 thin films with CdxZn1-xS buffer layer has been investigated in detail. Additionally, Zn doping promotes forming Sb2Se3 thin films with the desired [hk1] orientation, resulting in denser and larger grain sizes which will eventually regulate the defect density. Finally, based on the energy band structure and high-quality Sb2Se3 thin films, this study achieves a champion power conversion efficiency (PCE) of 8.76%, with a VOC of 458 mV, a JSC of 28.13 mA cm-2, and an FF of 67.85%. Overall, this study explores the growth mechanism of Sb2Se3 thin films, which can lead to further improvements in the efficiency of Sb2Se3 solar cells.
Collapse
Affiliation(s)
- Yusheng Yang
- School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, China
| | - Tingyu Zhang
- School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, China
| | - Hongcheng Zhu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Kangjun Geng
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Shan Huang
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Bangzhi Shen
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Boning Dong
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Shuai Zhang
- School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, China
| | - Ding Gu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Sai Jiang
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Yan Yan
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Huafei Guo
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - Jianhua Qiu
- School of Microelectronics and Control Engineering, Changzhou University, Changzhou, 213164, China
| | - LvZhou Li
- School of Mechanical Engineering, Yangzhou University, Yangzhou, 225009, China
| | - Ningyi Yuan
- School of Materials Science and Engineering, Jiangsu Collaborative Innovation Center for Photovoltaic Science and Engineering, Changzhou University, Changzhou, 213164, China
| | - Jianning Ding
- School of Mechanical Engineering, Yangzhou University, Yangzhou, 225009, China
| |
Collapse
|
3
|
Jin HJ, Seong C, Choi GW, Seo JY, Son MK. Solution-processed Sb 2Se 3 photocathodes under Se-rich conditions and their photoelectrochemical properties. RSC Adv 2024; 14:59-66. [PMID: 38173566 PMCID: PMC10762725 DOI: 10.1039/d3ra07023a] [Citation(s) in RCA: 0] [Impact Index Per Article: 0] [Reference Citation Analysis] [Abstract] [Grants] [Track Full Text] [Figures] [Journal Information] [Subscribe] [Scholar Register] [Received: 10/16/2023] [Accepted: 12/12/2023] [Indexed: 01/05/2024] Open
Abstract
In this study, selenium (Se)-rich antimony selenide (Sb2Se3) films were fabricated by applying a solution process with the solvents ethylenediamine and 2-mercaptoethanol to optimize the photoelectrochemical (PEC) performance of the Sb2Se3 photocathode. Various antimony (Sb)-Se precursor solutions with different molar ratios of Sb and Se (Sb : Se = 1 : 1.5, 1 : 3, 1 : 4.5, 1 : 7.5, and 1 : 9) were prepared to attain Se-rich fabrication conditions. As a result, the Se-rich Sb2Se3 films fabricated using the Sb-Se precursor solution with a molar ratio of Sb : Se = 1 : 7.5 exhibited an improved PEC performance, compared to the stoichiometric Sb2Se3 film. The charge transport was improved by the abundant Se element and thin selenium oxide (Se2O3) layer in the Se-rich Sb2Se3 film, resulting in a decrease in Se vacancies and substitutional defects. Moreover, the light utilization in the long wavelength region above 800 nm was enhanced by the light-trapping effect because of the nanowire structure in the Se-rich Sb2Se3 film. Hence, the optimal Se-rich Sb2Se3 photocathodes showed an improved photocurrent density of -0.24 mA cm-2 at the hydrogen evolution reaction potential that was three times higher than that of the stoichiometric Sb2Se3 photocathodes (-0.08 mA cm-2).
Collapse
Affiliation(s)
- Hui Jin Jin
- Nano Convergence Materials Center, Emerging Materials R&D Division, Korea Institute of Ceramic Engineering & Technology (KICET) Jinju 52851 Republic of Korea
- Department of Nano Fusion Technology, Pusan National University Busan 46241 Republic of Korea
| | - Chaeyong Seong
- Nano Convergence Materials Center, Emerging Materials R&D Division, Korea Institute of Ceramic Engineering & Technology (KICET) Jinju 52851 Republic of Korea
- Department of Materials Science and Engineering, Korea University Seoul 02841 Republic of Korea
| | - Gyu Wan Choi
- Nano Convergence Materials Center, Emerging Materials R&D Division, Korea Institute of Ceramic Engineering & Technology (KICET) Jinju 52851 Republic of Korea
- Department of Nano Fusion Technology, Pusan National University Busan 46241 Republic of Korea
| | - Ji-Youn Seo
- Department of Nano Fusion Technology, Pusan National University Busan 46241 Republic of Korea
| | - Min-Kyu Son
- Nano Convergence Materials Center, Emerging Materials R&D Division, Korea Institute of Ceramic Engineering & Technology (KICET) Jinju 52851 Republic of Korea
| |
Collapse
|